CN108983444A - Based on graphene-silicon hybrid integrated optical waveguide electric light half adder - Google Patents
Based on graphene-silicon hybrid integrated optical waveguide electric light half adder Download PDFInfo
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- CN108983444A CN108983444A CN201810788008.7A CN201810788008A CN108983444A CN 108983444 A CN108983444 A CN 108983444A CN 201810788008 A CN201810788008 A CN 201810788008A CN 108983444 A CN108983444 A CN 108983444A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0327—Operation of the cell; Circuit arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
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- Crystallography & Structural Chemistry (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a kind of based on graphene-silicon hybrid integrated optical waveguide electric light half adder, including three photoswitches, photoswitch includes two three-dB couplers, two phase displacement arm and three electrodes, phase displacement arm includes insulating layer, the first rectangular waveguide, the second rectangular waveguide and regulating course, first rectangular waveguide, regulating course and the second rectangular waveguide arrange in accordance with the order from top to bottom, and regulating course is by nine hafnium oxide layers and eight cross layered formation of graphene layer；Advantage is the effective refractive index for changing the first rectangular waveguide and the second rectangular waveguide by changing the fermi level of eight graphene layers, reduce the length of the first phase displacement arm and the second phase displacement arm, so that the area of entire electric light half adder is relatively small, convenient for cascade extension, additionally, due to one capacity plate antenna model of formation between a hafnium oxide layer and two graphene layers adjacent thereto, capacitor only consumes electric energy during charge and discharge and persistently will not produce electricl energy consumption, so that device power consumption is smaller.
Description
Technical field
The present invention relates to a kind of electric light half adders, more particularly, to a kind of based on graphene-silicon hybrid integrated optical waveguide
Electric light half adder.
Background technique
With flourishing for the information services such as cloud computing and big data, how to realize at efficient data exchange and data
Reason becomes current critical issue.Traditional silicon substrate electronic technology superelevation rate, power consumption and in terms of development encounter
Bottleneck.Optical device has high speed, large capacity, super low-power consumption and parallel intrinsic characteristic, is ideal information carrier.Silicon substrate light
Sub- device have with complementary metal oxide semiconductor (Complement ary Metal-Oxide-Semiconductor,
CMOS) the feature that technique is mutually compatible with, therefore, silicon based photon technology can be asked as current advantage technology to solve this key
Topic provides effective means.
Existing optical logic device can be divided into three kinds: all-optical logic gates, hot optical logic device and electric light logical device.Entirely
Optical logic device is by the way that using the nonlinear effect in silicon materials, for example the effects such as two-photon absorption and four-wave mixing, are controlled
Optical signal output, realizes specific logic function.Although all-optical logic gates have ultraspeed, it needs stronger pumping
Nonlinear effect in photo-induced silicon materials is unfavorable for subsequent integrated.Hot optical logic device is by utilizing the hot light in silicon materials
Effect, change pattern effective refractive index, achievable and/and non-or/or non-, exclusive or/with or with the logical operations such as half adder, but
The type device speed is typically in musec order, far from the requirement for meeting the following high-speed optical signal processing.And electric light logic
Device, for opposite all-optical logic gates and hot optical logic device, not only it is contemplated that the demand of speed, but be easily achieved it is integrated,
It is to study a kind of most commonly used optical logic device at present.
Currently, electric light logical device mainly has two classes, the first kind is used silicon-based micro ring structure, is imitated using carrier dispersion
It should realize logic function, but the bandwidth of such electric light logical device is vulnerable to limit, the second class uses Mach Zehnder interference knot
The characteristics such as structure realizes logic function, and Mach Zehnder interference structure has big tolerance and broadband is big.Electric light half adder, which is used as, works as
Preceding to be realized using a kind of extensive electric light logical device usually using Mach Zehnder interference structure, Mach-Zehnder is dry
Relating to the interfere arm in structure is the optical waveguide prepared using electrooptical material, and applying voltage on Mach Zehnder interference arm makes it
Itself refractive index changes to realize the function of half adder.But the electric light half adder needs to apply very strong external electric field
The variations in refractive index of Mach Zehnder interference arm could be changed, thus its power consumption is larger and occupied area is relatively large, is unfavorable for
Cascade extension.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of based on graphene-silicon hybrid integrated optical waveguide electric light half
Add device, the electric light half adder power consumption is smaller, and occupied area is smaller, is conducive to cascade extension.
The technical scheme of the invention to solve the technical problem is: a kind of be based on graphene-silicon hybrid integrated light
The electric light half adder of waveguide, including the identical photoswitch of three structures, the photoswitch be respectively provided with the first control terminal,
Second control terminal, first input end, the second input terminal, the first output end, second output terminal and third control terminal, described in first
Photoswitch the first output end and second described in photoswitch first input end connection, photoswitch described in first
Second output terminal is connected with the second input terminal of photoswitch described in second, the first output end of photoswitch described in second
The first input end of the photoswitch described with third connects, the first control terminal of photoswitch described in first and third institute
First control terminal of the photoswitch stated connects, the second control terminal and the third photoswitch of photoswitch described in first
The connection of the second control terminal, by the first control of the first control terminal of photoswitch described in first and the third photoswitch
Second control terminal of the connecting pin at end processed and the second control terminal and the third photoswitch of photoswitch described in first
Connecting pin in any one first control terminal as the electric light half adder, for accessing first control signal,
Any one conduct in second control terminal of photoswitch described in the first control terminal of photoswitch described in two and second
Second control terminal of the electric light half adder, for accessing second control signal.The third control of photoswitch described in first
The third control terminal at end processed, the third control terminal of photoswitch described in second and the third photoswitch accesses third
Signal is controlled, the third control signal is low level signal, and the first input end of photoswitch described in first is described
Electric light half adder input terminal, the second output terminal of photoswitch described in second be the electric light half adder and signal
First output end of output end, the third photoswitch is the carry signal output end of the electric light half adder, described
Photoswitch include identical two three-dB couplers of structure, the identical two phase displacement arm of structure and identical three electrodes of structure,
The three-dB coupler has first input end, the second input terminal, the first output end and second output terminal, 3dB described in two
Coupler is referred to as the first three-dB coupler and the second three-dB coupler, and phase displacement arm described in two is referred to as the first phase displacement arm
With the second phase displacement arm, electrode described in three is referred to as first electrode, second electrode and third electrode, the first 3dB
First output end of coupler is connect by the first phase displacement arm with the first input end of second three-dB coupler,
The second output terminal of first three-dB coupler pass through the second phase displacement arm and second three-dB coupler the
The connection of two input terminals；First phase displacement arm one end with one end of the first electrode and the second electrode respectively
It is connected, the second phase displacement arm is connected with one end of one end of the second electrode and the third electrode respectively
It connects, the first input end of first three-dB coupler is first input end, the first 3dB of the photoswitch
Second input terminal of coupler is the second input terminal of the photoswitch, the first output end of second three-dB coupler
For the first output end of the photoswitch, the second output terminal of second three-dB coupler is the of the photoswitch
Two output ends, the other end of the first electrode are the first control terminal of the photoswitch, the second electrode it is another
One end is the third control terminal of the photoswitch, and the other end of the third electrode is the second control of the photoswitch
End；
The phase displacement arm includes insulating layer, the first rectangular waveguide, the second rectangular waveguide and regulating course, first square
Shape waveguide, the regulating course and second rectangular waveguide are arranged successively in accordance with the order from top to bottom, and described first
The extending direction of rectangular waveguide and second rectangular waveguide is that from left to right, the left end of first rectangular waveguide is it
Input terminal, the right end of first rectangular waveguide are its output end, and the left end of second rectangular waveguide is its input terminal,
The right end of second rectangular waveguide is its output end, and the insulating layer is coated on first rectangular waveguide, described
Regulating course and second rectangular waveguide on, the width of first rectangular waveguide and second rectangular waveguide is equal
It is 450 nanometers, is highly 170 nanometers, refractive index is 3.470, and the regulating course includes first be laminated from top to bottom
Hafnium oxide layer, the first graphene layer, the second hafnium oxide layer, the second graphene layer, third hafnium oxide layer, third graphene
Layer, the 4th hafnium oxide layer, the 4th graphene layer, the 5th hafnium oxide layer, the 5th graphene layer, the 6th hafnium oxide layer,
Six graphene layers, the 7th hafnium oxide layer, the 7th graphene layer, the 8th hafnium oxide layer, the 8th graphene layer and the 9th dioxy
Change hafnium layer, first graphene layer, second graphene layer, the third graphene layer, the 4th stone
Black alkene layer, the 5th graphene layer, the 6th graphene layer, the 7th graphene layer and the 8th stone
The thickness of black alkene layer is 0.34 nanometer, first hafnium oxide layer, second hafnium oxide layer, the third
Hafnium oxide layer, the 4th hafnium oxide layer, the 5th hafnium oxide layer, the 6th hafnium oxide layer, institute
The thickness of the 7th hafnium oxide layer, the 8th hafnium oxide layer and the 9th hafnium oxide layer stated is 5 nanometers,
First hafnium oxide layer, second hafnium oxide layer, the third hafnium oxide layer, the 4th dioxy
Change hafnium layer, the 5th hafnium oxide layer, the 6th hafnium oxide layer, the 7th hafnium oxide layer, described
The refractive index of 8th hafnium oxide layer and the 9th hafnium oxide layer is 2.098, first hafnium oxide layer
Upper surface is bonded with the lower surface of first rectangular waveguide, the upper surface of the 9th hafnium oxide layer and described
The lower surfaces of two rectangular waveguides is bonded, the input terminal of first rectangular waveguide, second rectangular waveguide input terminal,
The left end of first hafnium oxide layer, the left end of first graphene layer, second hafnium oxide layer a left side
End, the left end of second graphene layer, the left end of the third hafnium oxide layer, the third graphene layer a left side
End, the left end of the 4th hafnium oxide layer, the left end of the 4th graphene layer, the 5th hafnium oxide layer
Left end, the left end of the 5th graphene layer, the left end of the 6th hafnium oxide layer, the 6th graphene layer
Left end, the left end of the 7th hafnium oxide layer, the left end of the 7th graphene layer, the 8th hafnium oxide layer
Left end, the left end of the 8th graphene layer and the left end of the 9th hafnium oxide layer reach outside the insulating layer
Input terminal of the portion as the phase displacement arm, the output end of first rectangular waveguide, second rectangular waveguide it is defeated
Outlet, the right end of first hafnium oxide layer, the right end of first graphene layer, second hafnium oxide layer
Right end, the right end of second graphene layer, the right end of the third hafnium oxide layer, the third graphene layer
Right end, the right end of the 4th hafnium oxide layer, the right end of the 4th graphene layer, the 5th hafnium oxide
Right end, the right end of the 5th graphene layer, the right end of the 6th hafnium oxide layer, the 6th graphene of layer
Right end, the right end of the 7th hafnium oxide layer, the right end of the 7th graphene layer, the 8th titanium dioxide of layer
The right end of the right end of hafnium layer, the right end of the 8th graphene layer and the 9th hafnium oxide layer reaches the insulation
The layer external output end as the phase displacement arm, the front end of first graphene layer, the third graphene layer
The front end of front end, the front end of the 5th graphene layer and the 7th graphene layer reaches the outer conduct of the insulating layer
First control terminal of the phase displacement arm, the rear end of second graphene layer, the rear end of the 4th graphene layer, institute
The rear end for the 6th graphene layer stated and the rear end of the 8th graphene layer reach outside the insulating layer as described
Second control terminal of phase displacement arm；The input terminal of the first phase displacement arm and the first output end of first three-dB coupler
Connection, the output end of the first phase displacement arm are connected with the first input end of second three-dB coupler, and described second
The input terminal of phase displacement arm is connected with the second output terminal of first three-dB coupler, the output end of the second phase displacement arm
It is connected with the second input terminal of second three-dB coupler, the first control terminal of the first phase displacement arm and described the
Second control terminal of the connection of one end of two electrodes, the first phase displacement arm is connect with one end of the first electrode, institute
First control terminal of the second phase displacement arm stated is connect with one end of the second electrode, the second control of the second phase displacement arm
End processed is connect with one end of the third electrode.
The material of the insulating layer is silica, and the refractive index of the insulating layer is 1.447, first square
The material of shape waveguide and second rectangular waveguide is silicon.The structure does insulating layer using silica and makes structure or more
Symmetrically, mould field is also symmetrical above and below, reduces transmission loss.
The width of first rectangular waveguide and second rectangular waveguide is 450 nanometers, is highly 170 to receive
Rice, refractive index is 3.470.
The electrode is connected and composed by gold electrode and platinum electrode, the first control terminal of the first phase displacement arm with it is described
Second electrode platinum electrode connection, the platinum electrode of the second control terminal of the first phase displacement arm and the first electrode
Connection, the first control terminal of the second phase displacement arm are connect with the platinum electrode of the second electrode, second phase shift
Second control terminal of arm is connect with the platinum electrode of the third electrode, and the gold electrode of the first electrode is that the light is opened
The first control terminal closed, the gold electrode of the second electrode are the third control terminal of the photoswitch, the third electricity
The gold electrode of pole is the second control terminal of the photoswitch.Gold electrode has smaller as the control terminal of photoswitch in the structure
Resistance and stability it is good, and platinum electrode and the graphene layer film adhesion in the control terminal of phase displacement arm are relatively good, can shape
At stable contact point, be conducive to the technique production of device.
Compared with the prior art, the advantages of the present invention are as follows the present invention is based on graphene-silicon hybrid integrated optical waveguide electricity
Light half adder is made of the identical photoswitch of three structures, and each photoswitch is respectively provided with the first control terminal, the second control
End, first input end, the second input terminal, the first output end, second output terminal and third control terminal processed, light described in first are opened
The first input end connection of photoswitch described in the first output end closed and second, second of photoswitch described in first be defeated
Outlet is connected with the second input terminal of photoswitch described in second, the first output end and third of photoswitch described in second
The first input end connection of a photoswitch, the first control terminal of first photoswitch and the first of third photoswitch are controlled
End connection processed, the second control terminal of first photoswitch connect with the second control terminal of third photoswitch, first light are opened
The connecting pin of first control terminal of the first control terminal and third photoswitch closed and the second control terminal of first photoswitch and
The first control terminal of any one in the connecting pin of second control terminal of third photoswitch as electric light half adder, for connecing
Enter first control signal, any one in the first control terminal of second photoswitch and the second control terminal of second photoswitch
As the second control terminal of electric light half adder, for accessing second control signal.The third of photoswitch described in first controls
It holds, the third control terminal for the photoswitch that the third control terminal of photoswitch described in second and third are described accesses low electricity
Flat, the first input end of photoswitch described in first is the input terminal of the electric light half adder, and light described in second is opened
The second output terminal of pass be the electric light half adder and signal output end, the first output end of the third photoswitch
For the carry signal output end of the electric light half adder；If the first control of on-load voltage signal photoswitch described in first
First control terminal of photoswitch described in the first control terminal of end processed, third the photoswitch and second is all high level
When, optical signal is exported from the first output end of photoswitch described in first, and first through photoswitch described in second is defeated
Enter end input, then exported from the first output end of photoswitch described in second, subsequently into the third photoswitch
First input end input, finally from the first output end output of the third photoswitch；If on-load voltage signal is first
First control terminal of the first control terminal and third of a photoswitch photoswitch is high level and on-load voltage
When first control terminal of signal photoswitch described in second is low level, optical signal from photoswitch described in first the
The output of one output end, and inputted through the first input end of photoswitch described in second, finally from photoswitch described in second
Second output terminal output；If the first control terminal and third of on-load voltage signal photoswitch described in first are described
First control terminal of the first control terminal of photoswitch photoswitch described in second that is low level and on-load voltage signal is high
When level, optical signal is exported from the first output end of photoswitch described in first, and the through photoswitch described in second
The input of two input terminals, finally exports from the second output terminal of photoswitch described in second；If on-load voltage signal is at first
Photoswitch described in first control terminal of the first control terminal of the photoswitch, the third photoswitch and second
When first control terminal is low level, optical signal is exported from the second output terminal of photoswitch described in first, and through second institute
Second input terminal of the photoswitch stated inputs, and then exports from the first output end of photoswitch described in second, most afterwards through the
The first input end of photoswitch described in three inputs, then from the second output terminal output of the third photoswitch；Add
The first control signal for being loaded in the first control terminal of photoswitch acts on the regulating course of the first phase displacement arm by first electrode, and second
Control signal acts on the regulating course of the second phase displacement arm by third electrode, and third controls signal (i.e. low level signal) and passes through the
Two electrodes are respectively acting on the regulating course of the first phase displacement arm and the regulating course of the second phase displacement arm, thus the regulating course of the first phase displacement arm
In the second graphene layer, the 4th graphene layer, the 6th graphene layer and the 8th graphene layer fermi level in the first control
It is changed under signal function processed, the second graphene layer, the 4th graphene layer, the 6th graphite in the regulating course of the second phase displacement arm
The fermi level of alkene layer and the 8th graphene layer is changed under second control signal effect, in the regulating course of the first phase displacement arm
The first graphene layer, third graphene layer, the 5th graphene layer and the 7th graphene layer, the second phase displacement arm regulating course in
First graphene layer, third graphene layer, the 5th graphene layer and the 7th graphene layer fermi level control signal in third
It is changed under effect, so as to significantly change the effective refractive index of the first rectangular waveguide and the second rectangular waveguide,
In the case that the effective refractive index of first rectangular waveguide and the second rectangular waveguide can significantly alter, the first rectangular waveguide and
The length of two rectangular waveguides can also reduce accordingly, i.e., the length of the first phase displacement arm and the second phase displacement arm can be chosen smaller
So that the area of entire electric light half adder is relatively small, convenient for cascade extension, additionally, due to a hafnium oxide layer and with
Between its two adjacent graphene layer formed a capacity plate antenna model, capacitor only during charge and discharge consume electric energy and
What will not be continued produces electricl energy consumption, so that device power consumption is smaller.
Detailed description of the invention
Fig. 1 is the structural principle block diagram of the invention based on graphene-silicon hybrid integrated optical waveguide electric light half adder；
Fig. 2 is that the structure of the invention based on photoswitch in graphene-silicon hybrid integrated optical waveguide electric light half adder is former
Manage block diagram；
Fig. 3 is the main view of the invention based on photoswitch in graphene-silicon hybrid integrated optical waveguide electric light half adder；
Fig. 4 is invention based on two phase shifts in photoswitch in graphene-silicon hybrid integrated optical waveguide electric light half adder
Arm removes the main view after insulating layer；
Fig. 5 is the cross-sectional view in Fig. 3 at A-A'；
Fig. 6 (a) is the present invention when message transmission rate is 10Gbit/s, and the first control signal X of load is
' 00001110100110111000 ' level waveforms figure；
Fig. 6 (b) is the present invention when message transmission rate is 10Gbit/s, and the second control signal Y of load is
' 00011010110111101000 ' level waveforms figure；
Fig. 6 (c) is of the invention based on graphene-silicon hybrid integrated optical waveguide electric light half adder load the first control letter
When number X and second control signal Y and the level waveforms of the output result ' 00010100010001010000 ' of signal output end
Figure；
Fig. 6 (d) is of the invention based on graphene-silicon hybrid integrated optical waveguide electric light half adder load the first control letter
When number X and second control signal Y, the level waveforms of the output result ' 00001010100110101000 ' of carry signal output end
Figure.
Specific embodiment
The present invention will be described in further detail below with reference to the embodiments of the drawings.
Embodiment one: a kind of identical based on graphene-silicon hybrid integrated optical waveguide electric light half adder, including three structures
Photoswitch, each photoswitch is respectively provided with the first control terminal, the second control terminal, first input end, the second input terminal, first defeated
The first of outlet, second output terminal and third control terminal, the first output end of first photoswitch 1 and second photoswitch 2 is defeated
Enter end connection, the second output terminal of first photoswitch 1 is connected with the second input terminal of second photoswitch 2, and second light is opened
It closes 2 the first output end to connect with the first input end of third photoswitch 3, the first control terminal of first photoswitch 1 and the
The first control terminal connection of three photoswitches 3, the second control terminal of first photoswitch 1 and the second of third photoswitch 3 are controlled
End processed connection, by the connecting pin and first of the first control terminal of first photoswitch 1 and the first control terminal of third photoswitch 3
Any one in the connecting pin of second control terminal of the second control terminal and third photoswitch 3 of a photoswitch 1 is as electric light
First control terminal of half adder, for accessing first control signal, the first control terminal of second photoswitch 2 and second light are opened
Second control terminal of any one in 2 the second control terminal as electric light half adder is closed, for accessing second control signal.The
The third control terminal of the third control terminal of one photoswitch 1, the third control terminal of second photoswitch 2 and third photoswitch 3
Access third controls signal, and it is low level signal that third, which controls signal, and the first input end of first photoswitch 1 is electric light half
Add the input terminal of device, the second output terminal of second photoswitch 2 be electric light half adder and signal output end, output and signal
SUM, SUM=X+Y, the first output end of third photoswitch 3 are the carry signal output end of electric light half adder, output carry letter
Number Carry, Carry=XY, each photoswitch respectively include identical two three-dB couplers of structure, identical two phases of structure
Displacement arm and identical three electrodes of structure, three-dB coupler have first input end, the second input terminal, the first output end and second
Output end, three-dB coupler realize that two three-dB couplers are referred to as the first 3dB coupling using the matured product of its technical field
Device U1 and the second three-dB coupler U2, two phase displacement arm are referred to as the first phase displacement arm 4 and the second phase displacement arm 5, three electrode difference
First output end of referred to as first electrode 6, second electrode 7 and third electrode 8, the first three-dB coupler U1 passes through the first phase displacement arm 4
It is connect with the first input end of the second three-dB coupler U2, the second output terminal of the first three-dB coupler U1 passes through the second phase displacement arm 5
It is connect with the second input terminal of the second three-dB coupler U2；First phase displacement arm 4 respectively with one end of first electrode 6 and second electrode 7
One end be connected, the second phase displacement arm 5 is connected with one end of one end of second electrode 7 and third electrode 8 respectively, the first 3dB
The first input end of coupler U1 be the first input end of photoswitch, the first three-dB coupler U1 the second input terminal be that light is opened
The second input terminal closed, the first output end of the second three-dB coupler U2 are the first output end of photoswitch, the second three-dB coupler
The second output terminal of U2 is the second output terminal of photoswitch, and the other end of first electrode 6 is the first control terminal of photoswitch, second
The other end of electrode 7 is the third control terminal of photoswitch, and the other end of third electrode 8 is the second control terminal of photoswitch；Each
Phase displacement arm respectively includes insulating layer 9, the first rectangular waveguide 10, the second rectangular waveguide 11 and regulating course, and the first rectangular waveguide 10 is adjusted
Ganglionic layer 101 and the second rectangular waveguide 11 are arranged successively in accordance with the order from top to bottom, the first rectangular waveguide 10 and the second rectangular wave
The extending direction for leading 11 is that from left to right, the left end of the first rectangular waveguide 10 is its input terminal, the right end of the first rectangular waveguide 10
For its output end, the left end of the second rectangular waveguide 11 is its input terminal, and the right end of the second rectangular waveguide 11 is its output end, insulation
Layer 9 is coated on the first rectangular waveguide 10, regulating course and the second rectangular waveguide 11, the first rectangular waveguide 10 and the second rectangular waveguide
11 width is 450 nanometers, is highly 170 nanometers, and refractive index is 3.470, and regulating course includes being laminated from top to bottom
First hafnium oxide layer 12, the first graphene layer 13, the second hafnium oxide layer 14, the second graphene layer 15, third hafnium oxide
Layer 16, third graphene layer 17, the 4th hafnium oxide layer 18, the 4th graphene layer 19, the 5th hafnium oxide layer 20, the 5th graphite
Alkene layer 21, the 6th hafnium oxide layer 22, the 6th graphene layer 23, the 7th hafnium oxide layer 24, the 7th graphene layer the 25, the 8th 2
Hafnium oxide layer 26, the 8th graphene layer 27 and the 9th hafnium oxide layer 28, the first graphene layer 13, the second graphene layer 15,
Three graphene layers 17, the 4th graphene layer 19, the 5th graphene layer 21, the 6th graphene layer 23, the 7th graphene layer 25 and
The thickness of eight graphene layers 27 is 0.34 nanometer, the first hafnium oxide layer 12, the second hafnium oxide layer 14, third hafnium oxide
Layer the 16, the 4th hafnium oxide layer 18, the 5th hafnium oxide layer 20, the 6th hafnium oxide layer 22, the 7th hafnium oxide layer the 24, the 8th
The thickness of hafnium oxide layer 26 and the 9th hafnium oxide layer is 5 nanometers, the first hafnium oxide layer 12, the second hafnium oxide layer
14, third hafnium oxide layer 16, the 4th hafnium oxide layer 18, the 5th hafnium oxide layer 20, the 6th hafnium oxide layer the 22, the 7th 2
The refractive index of hafnium oxide layer 24, the 8th hafnium oxide layer 26 and the 9th hafnium oxide layer is 2.098, the first hafnium oxide layer 12
Upper surface be bonded with the lower surface of the first rectangular waveguide 10, the upper surface of the 9th hafnium oxide layer 28 and the second rectangular waveguide 11
Lower surface fitting, the input terminal of the first rectangular waveguide 10, the input terminal of the second rectangular waveguide 11, first hafnium oxide layer 12
Left end, the left end of the first graphene layer 13, the left end of the second hafnium oxide layer 14, the left end of the second graphene layer 15, the three or two
The left end of hafnium oxide layer 16, the left end of third graphene layer 17, the left end of the 4th hafnium oxide layer 18, the 4th graphene layer 19
Left end, the left end of the 5th hafnium oxide layer 20, the left end of the 5th graphene layer 21, the left end of the 6th hafnium oxide layer 22, the 6th
The left end of graphene layer 23, the left end of the 7th hafnium oxide layer 24, the left end of the 7th graphene layer 25, the 8th hafnium oxide layer 26
Left end, the left end of the 8th graphene layer 27 and the left end of the 9th hafnium oxide layer 28 reach outside insulating layer 9 as phase displacement arm
Input terminal, the right side of the output end of the first rectangular waveguide 10, the output end of the second rectangular waveguide 11, the first hafnium oxide layer 12
End, the right end of the first graphene layer 13, the right end of the second hafnium oxide layer 14, the right end of the second graphene layer 15, third dioxy
Change the right end of hafnium layer 16, the right side of the right end of third graphene layer 17, the right end of the 4th hafnium oxide layer 18, the 4th graphene layer 19
End, the right end of the 5th hafnium oxide layer 20, the right end of the 5th graphene layer 21, the 6th hafnium oxide layer 22 right end, the 6th stone
The right end of black alkene layer 23, the right end of the 7th hafnium oxide layer 24, the right end of the 7th graphene layer 25, the 8th hafnium oxide layer 26
The right end of right end, the right end of the 8th graphene layer 27 and the 9th hafnium oxide layer 28 reaches outside insulating layer 9 as phase displacement arm
Output end, the front end of the first graphene layer 13, the front end of third graphene layer 17, the front end of the 5th graphene layer 21 and the 7th stone
The front end of black alkene layer 25 reaches the first control terminal outside insulating layer 9 as phase displacement arm, the rear end of the second graphene layer 15, the 4th stone
Rear end, the rear end of the 6th graphene layer 23 and the rear end of the 8th graphene layer 27 of black alkene layer 19 reach outside insulating layer 9 as phase
Second control terminal of displacement arm；The connection of the first output end of the input terminal of first phase displacement arm 4 and the first three-dB coupler U1, the first phase
The connection of the first input end of the output end of displacement arm 4 and the second three-dB coupler U2, the input terminal and the first 3dB coupling of the second phase displacement arm 5
The second output terminal of clutch U1 connects, the second input terminal connection of the output end of the second phase displacement arm 5 and the second three-dB coupler U2,
The connection of one end of the first control terminal and second electrode 7 of the first phase displacement arm 4, the second control terminal and first of the first phase displacement arm 4
One end of electrode 6 connects, and the first control terminal of the second phase displacement arm 5 is connect with one end of second electrode 7, and the of the second phase displacement arm 5
Two control terminals are connect with one end of third electrode 8.
In the present embodiment, each electrode is connected and composed by gold electrode and platinum electrode respectively, the first control of the first phase displacement arm 4
The connection at end and the platinum electrode of second electrode 7, the second control terminal of the first phase displacement arm 4 are connect with the platinum electrode of first electrode 6, the
First control terminal of two-phase displacement arm 5 is connect with the platinum electrode of second electrode 7, the second control terminal and the third electricity of the second phase displacement arm 5
The platinum electrode of pole 8 connects, and the gold electrode of first electrode 6 is the first control terminal of photoswitch, and the gold electrode of second electrode 7 is opened for light
The third control terminal of pass, the gold electrode of third electrode 8 are the second control terminal of photoswitch.
Embodiment two: the present embodiment is basically the same as the first embodiment, and difference is only that in the present embodiment, the material of insulating layer 9
Material is silica, and the refractive index of insulating layer 9 is 1.447, and the material of the first rectangular waveguide 10 and the second rectangular waveguide 11 is
Silicon.
When message transmission rate is 10Gbit/s, the first control signal X of load is the present invention
Shown in ' 00001110100110111000 ' level waveforms figure such as Fig. 6 (a), the present invention is 10Gbit/s in message transmission rate
In the case of, shown in level waveforms figure such as Fig. 6 (b) that the second control signal Y of load is ' 00011010110111101000 ', this
Invention loads first control signal X and second control signal Y based on graphene-silicon hybrid integrated optical waveguide electric light half adder
When and signal output end output result ' 00010100010001010000 ' level waveforms figure such as Fig. 6 (c) shown in, this hair
Bright loads first control signal X and second control signal Y based on graphene-silicon hybrid integrated optical waveguide electric light half adder
When, shown in level waveforms figure such as Fig. 6 (d) of the output result ' 00001010100110101000 ' of carry signal output end.Point
It analyses known to Fig. 6 (a)~Fig. 6 (d): of the invention based on graphene-when by load first control signal and second control signal
The electric light half adder of silicon hybrid integrated optical waveguide and output end and carry output output correct result, the present invention have just
True logic.
Claims (4)
1. it is a kind of based on graphene-silicon hybrid integrated optical waveguide electric light half adder, including the identical photoswitch of three structures, often
A photoswitch be respectively provided with the first control terminal, the second control terminal, first input end, the second input terminal, the first output end,
Second output terminal and third control terminal, of photoswitch described in the first output end of photoswitch described in first and second
Second input terminal of the connection of one input terminal, photoswitch described in the second output terminal of photoswitch described in first and second connects
It connecing, the first input end of the first output end of photoswitch described in second photoswitch described with third connects, and first
First control terminal of the first control terminal of photoswitch photoswitch described with third connects, and light described in first is opened
Second control terminal of the second control terminal closed photoswitch described with third connects, by first of photoswitch described in first
Second control of the connecting pin of the first control terminal of photoswitch described in control terminal and third and photoswitch described in first
Any one in the connecting pin of second control terminal of photoswitch described in end and third is as the electric light half adder
First control terminal, for accessing first control signal, described in the first control terminal of photoswitch described in second and second
The second control terminal of any one in second control terminal of photoswitch as electric light half adder, for accessing the second control letter
Number.The third control terminal of photoswitch described in first, the third control terminal of photoswitch described in second and third are described
The third control terminal of photoswitch access third control signal, the described third control signal is low level signal, first
The first input end of the photoswitch is the input terminal of the electric light half adder, and second of photoswitch described in second is defeated
Outlet be the electric light half adder and signal output end, the first output end of the third photoswitch be the electricity
The carry signal output end of light half adder, it is characterised in that the photoswitch includes identical two three-dB couplers of structure, knot
The identical two phase displacement arm of structure and identical three electrodes of structure, the three-dB coupler have first input end, the second input
End, the first output end and second output terminal, three-dB coupler described in two are referred to as the first three-dB coupler and the 2nd 3dB coupling
Clutch, phase displacement arm described in two are referred to as the first phase displacement arm and the second phase displacement arm, and electrode described in three is referred to as
First output end of one electrode, second electrode and third electrode, first three-dB coupler passes through the first phase displacement arm
It is connect with the first input end of second three-dB coupler, the second output terminal of first three-dB coupler passes through described
The second phase displacement arm connect with the second input terminal of second three-dB coupler；The first phase displacement arm respectively with it is described
One end of first electrode be connected with one end of the second electrode, the second phase displacement arm is respectively with described second
One end of electrode is connected with one end of the third electrode, and the first input end of first three-dB coupler is described
The first input end of photoswitch, first three-dB coupler the second input terminal be the second defeated of the photoswitch
Enter end, the first output end of second three-dB coupler is the first output end of the photoswitch, the 2nd 3dB
The second output terminal of coupler is the second output terminal of the photoswitch, and the other end of the first electrode is the light
First control terminal of switch, the other end of the second electrode are the third control terminal of the photoswitch, the third
The other end of electrode is the second control terminal of the photoswitch；
The phase displacement arm includes insulating layer, the first rectangular waveguide, the second rectangular waveguide and regulating course, first rectangular wave
It leads, the regulating course and second rectangular waveguide are arranged successively in accordance with the order from top to bottom, first rectangle
The extending direction of waveguide and second rectangular waveguide is from left to right that the left end of first rectangular waveguide inputs for it
End, the right end of first rectangular waveguide are its output end, and the left end of second rectangular waveguide is its input terminal, described
The right end of the second rectangular waveguide be its output end, the insulating layer is coated on first rectangular waveguide, the tune
In ganglionic layer and second rectangular waveguide, the regulating course includes the first hafnium oxide layer being laminated from top to bottom, first
Graphene layer, the second hafnium oxide layer, the second graphene layer, third hafnium oxide layer, third graphene layer, the 4th hafnium oxide
Layer, the 4th graphene layer, the 5th hafnium oxide layer, the 5th graphene layer, the 6th hafnium oxide layer, the 6th graphene layer, the 7th
Hafnium oxide layer, the 7th graphene layer, the 8th hafnium oxide layer, the 8th graphene layer and the 9th hafnium oxide layer, described
One graphene layer, second graphene layer, the third graphene layer, the 4th graphene layer, described
Five graphene layers, the 6th graphene layer, the thickness of the 7th graphene layer and the 8th graphene layer are equal
It is 0.34 nanometer, first hafnium oxide layer, second hafnium oxide layer, the third hafnium oxide layer, institute
The 4th hafnium oxide layer, the 5th hafnium oxide layer, the 6th hafnium oxide layer, the 7th titanium dioxide stated
The thickness of hafnium layer, the 8th hafnium oxide layer and the 9th hafnium oxide layer is 5 nanometers, first dioxy
Change hafnium layer, second hafnium oxide layer, the third hafnium oxide layer, the 4th hafnium oxide layer, described
5th hafnium oxide layer, the 6th hafnium oxide layer, the 7th hafnium oxide layer, the 8th hafnium oxide layer
Refractive index with the 9th hafnium oxide layer is 2.098, the upper surface of first hafnium oxide layer and described
The lower surface of first rectangular waveguide is bonded, under the upper surface and second rectangular waveguide of the 9th hafnium oxide layer
Surface fitting, the input terminal of first rectangular waveguide, the input terminal of second rectangular waveguide, first dioxy
Change the left end of hafnium layer, the left end of first graphene layer, the left end of second hafnium oxide layer, second stone
The left end of black alkene layer, the left end of the third hafnium oxide layer, the left end of the third graphene layer, the described the 4th 2
The left end of hafnium oxide layer, the left end of the 4th graphene layer, the left end of the 5th hafnium oxide layer, the described the 5th
The left end of graphene layer, the left end of the 6th hafnium oxide layer, the left end of the 6th graphene layer, the described the 7th
The left end of hafnium oxide layer, the left end of the 7th graphene layer, the left end of the 8th hafnium oxide layer, described
The left end of eight graphene layers and the left end of the 9th hafnium oxide layer reach outside the insulating layer as the phase
The input terminal of displacement arm, the output end of first rectangular waveguide, the output end of second rectangular waveguide, described first
The right end of hafnium oxide layer, the right end of first graphene layer, the right end of second hafnium oxide layer, described
The right end of two graphene layers, the right end of the third hafnium oxide layer, the right end of the third graphene layer, described
The right end of four hafnium oxide layers, the right end of the 4th graphene layer, the 5th hafnium oxide layer right end, described
The right end of 5th graphene layer, the right end of the 6th hafnium oxide layer, the 6th graphene layer right end, described
The right end of 7th hafnium oxide layer, the right end of the 7th graphene layer, the 8th hafnium oxide layer right end, described
The right end of the 8th graphene layer and described in the right end of the 9th hafnium oxide layer reaches and is used as outside the insulating layer
Phase displacement arm output end, the front end of first graphene layer, the front end of the third graphene layer, the described the 5th
The front end of graphene layer and the front end of the 7th graphene layer reach outside the insulating layer as the phase displacement arm
First control terminal, the rear end of second graphene layer, the rear end of the 4th graphene layer, the 6th graphene
The rear end of layer and the rear end of the 8th graphene layer reach the second control outside the insulating layer as the phase displacement arm
End processed；The input terminal of the first phase displacement arm is connected with the first output end of first three-dB coupler, and described first
The output end of phase displacement arm is connected with the first input end of second three-dB coupler, the input terminal of the second phase displacement arm
It is connected with the second output terminal of first three-dB coupler, the output end and the 2nd 3dB of the second phase displacement arm
Second input terminal of coupler connects, the company of one end of the first control terminal of the first phase displacement arm and the second electrode
It connects, the second control terminal of the first phase displacement arm is connect with one end of the first electrode, the second phase displacement arm
First control terminal is connect with one end of the second electrode, the second control terminal of the second phase displacement arm and the third
One end of electrode connects.
2. according to claim 1 a kind of based on graphene-silicon hybrid integrated optical waveguide electric light half adder, feature exists
It is silica in the material of the insulating layer, the refractive index of the insulating layer is 1.447, first rectangular waveguide
Material with second rectangular waveguide is silicon.
3. according to claim 1 a kind of based on graphene-silicon hybrid integrated optical waveguide electric light half adder, feature exists
It is 450 nanometers in the width of first rectangular waveguide and second rectangular waveguide, is highly 170 nanometers, rolls over
The rate of penetrating is 3.470.
4. according to claim 1 a kind of based on graphene-silicon hybrid integrated optical waveguide electric light half adder, feature exists
It is connected and composed in the electrode by gold electrode and platinum electrode, the first control terminal of the first phase displacement arm and described second
Second control terminal of the connection of the platinum electrode of electrode, the first phase displacement arm is connect with the platinum electrode of the first electrode,
First control terminal of the second phase displacement arm is connect with the platinum electrode of the second electrode, and the of the second phase displacement arm
Two control terminals are connect with the platinum electrode of the third electrode, and the gold electrode of the first electrode is the of the photoswitch
One control terminal, the gold electrode of the second electrode are the third control terminal of the photoswitch, the gold of the third electrode
Electrode is the second control terminal of the photoswitch.
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