CN110109268A - Silicon substrate mode selection switch based on horizontal three-core coupler - Google Patents
Silicon substrate mode selection switch based on horizontal three-core coupler Download PDFInfo
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- CN110109268A CN110109268A CN201910477482.2A CN201910477482A CN110109268A CN 110109268 A CN110109268 A CN 110109268A CN 201910477482 A CN201910477482 A CN 201910477482A CN 110109268 A CN110109268 A CN 110109268A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12145—Switch
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses a kind of silicon substrate mode selection switch based on horizontal three-core coupler, including substrate layer, under-clad layer and upper caldding layer；Left side doping planar waveguide layer and right side doping planar waveguide layer are covered on under-clad layer, left side adulterates planar waveguide layer and is equipped with left electrodes and input waveguide；It adulterates planar waveguide layer and is equipped with right electrodes and trunk waveguide in right side；Using the horizontal MOS capacitor based on ENZ-ITO, by adjusting applied voltage, adjust the concentration of the double carriers accumulated layers of ITO layer, reach the state conversion that rapid phase transition carrys out implementation pattern multiplexing, high-speed switch conversion is realized, light and substance interaction are improved, lays good basis on piece mode multiplexing technology, it further realizes and is routed applied to the flexible modes of mode division multiplexing network, laid a good foundation for high-performance optical signal processing chip in realization optic communication, photonic system or device.
Description
Technical field
The present invention relates to optic communication devices more particularly to a kind of silicon substrate model selection based on horizontal three-core coupler to open
It closes.
Background technique
Mode division multiplexing technology (Mode-division multiplexing, MDM) improves light and passes for overcoming communication performance bottleneck
The capacity of defeated network is with important application prospects.Silicon photonics have compact-sized, low in cost and CMOS
The advantages that optical device of (Complementary Metal-Oxide Semiconductor) process compatible.In order to construct piece
, there are the various building modules based on silicon in upper MDM system, including pattern multiplexer/demultiplexer, multimode power current divider,
Mode filter, multimode curved waveguide/crossing waveguide and mode selection switch (MSS).In these devices, MSS is that realization can
Reconstruct the basic and key component of the flexible modes routing and exchange of MDM network.
Recently, some MSS methods for establishing the restructural MDM network of silicon have been reported, including micro-ring resonant cavity (MRRs), horse
Conspicuous-Zeng Deer interferometer (MZIs), multiple-mode interfence (MMI) coupler, and three-dimensional waveguide coupler (TWCs): one kind is specifically included
1 × 2 multimode switch based on MRRs, a kind of MSS and Thermo-optic phase converter based on MMI coupler and phase shifter are a kind of
Using phase-change material (PCMs) and transparent conductive oxide (TCOs), the configuration based on TWC of composition.
Although these types of scheme crosstalk is low, insertion loss is small, conversion speed is fast, size is small, these scheme some by
In the presence of critical harmony condition, MRRs may make bandwidth of operation degenerate；Some due to traditional electric light and to the influence of silicon,
Cause the size of electric light larger or phase shifter realizes essential phase transformation；Structure design flexibility also is limited, may be with other
On piece element is incompatible.
Summary of the invention
Goal of the invention: of the existing technology in order to solve the problems, such as, it is an object of that present invention to provide one kind to be based on level three
The silicon substrate mode selection switch of waveguide coupler adjusts the carrier concentration of ITO biproduct poly layer by additional grid voltage, realizes ideal
Switch state.
Technical solution: a kind of silicon substrate mode selection switch based on horizontal three-core coupler, including substrate layer, in substrate
Layer is equipped with under-clad layer, and left side first is equipped on under-clad layer and adulterates planar waveguide layer, planar waveguide layer is adulterated in left side second, right
Side first adulterates planar waveguide layer and right side second and adulterates planar waveguide layer, in the left side first doping planar waveguide layer and
Left side second is adulterated between planar waveguide layer, and input waveguide is equipped with, and adulterates planar waveguide layer and right side the on the right side first
Between two doping planar waveguide layers, it is equipped with trunk waveguide, planar waveguide layer is adulterated in the left side second and right side second is adulterated
Between planar waveguide layer, it is equipped with central capacitor；It adulterates planar waveguide layer and is equipped with left electrodes, the right side in the left side first
It adulterates planar waveguide layer and is equipped with right electrodes in side first；
Specifically, the central capacitor includes doped silicon layer on the left of central capacitor, HfO on the left of central capacitor2, in
ITO layer, central capacitor right side HfO on the left of electrocardio container2Doped silicon layer on the right side of layer and central capacitor, above-mentioned each material layer edge
The horizontal direction of under-clad layer is sequentially connected, and constitutes double carriers accumulated layers；Wherein, doped silicon layer is logical on the left of the central capacitor
It crosses left side the second doping planar waveguide layer to be connected with input waveguide, doped silicon layer is mixed by right side second on the right side of central capacitor
Miscellaneous planar waveguide layer is connected with trunk waveguide, and input waveguide adulterates planar waveguide layer by left side first and is connected with left electrodes
It connects, trunk waveguide adulterates planar waveguide layer by right side first and is connected with right electrodes；In the left electrodes, right electrodes
And add applied voltage in the left side ITO layer of central capacitor.Upper caldding layer is covered on the under-clad layer.
Preferably, the constituent material of ITO layer is indium seleno oxide ITO, graphene, G on the left of the central capacitor2S2T5
And G2S2S4T1。
Further, the mode in the trunk waveguide is any higher order mode.
Beneficial effect
Compared with prior art, the present invention has following marked improvement: 1, the invention proposes a kind of based on ENZ-ITO's
The silicon substrate MSS of horizontal MOS capacitor improves switch efficiency, to further increase and be by introducing double carriers accumulated layers
System message capacity.2, the present invention makes ITO form horizontal Si/HfO by introducing ITO layer2/ITO/HfO2The MOS capacitor knot of/Si
Structure.It overcomes traditional twin-guide plasma device Metal Substrate plasma structure and big problem is lost, reduce resistance damage
Consumption and loss of light propagation, improve light and substance interaction, to substantially increase mode switch speed, reduce switch function
Consumption.3, the present invention controls the double carriers accumulated layers concentration or stone of ITO by applying voltage bias in horizontal MOS capacitor
Black alkene, G2S2T5And G2S2S4T1Phase transformation crystalline state reaches rapid phase transition, and then realizes the switch selection of mode division multiplexing.4, this hair
Bright to have the ability that unlike signal is selected and routed in different channels, switch conversion speed is fast, memory is small, small power consumption, size
It is small, realize the conversion between different mode.5, the present invention is based on the preparation of the CMOS technology of existing maturation, operating cost is low, can
Realize mass manufacture, production efficiency is higher, and there are emulative advantages.6, the present invention can be with existing a variety of multiplexing technologies
(WDM, PDM etc.) is compatible to be used, its application range and bandwidth capacity have been widened, and compatibility is high, has a wide range of application.
Detailed description of the invention
Fig. 1 is a kind of silicon substrate mode selection switch schematic diagram based on horizontal three-core coupler；
Fig. 2 is a kind of silicon substrate mode selection switch waveguide sections schematic diagram based on horizontal three-core coupler；
Fig. 3 is a kind of super model TM-A field pattern of silicon substrate mode selection switch based on horizontal three-core coupler；
Fig. 4 is a kind of super model TM-B field pattern of silicon substrate mode selection switch based on horizontal three-core coupler；
Fig. 5 is a kind of super model TM-C field pattern of silicon substrate mode selection switch based on horizontal three-core coupler；
Fig. 6 be a kind of silicon substrate mode selection switch work based on horizontal three-core coupler accumulated layers with a thickness of
10nm, when spacing is 200nm between each waveguide, propagation field figure in the z-direction is switched in "open" state；
Fig. 7 be it is a kind of based on the silicon substrate mode selection switch of horizontal three-core coupler in accumulated layers with a thickness of 10nm,
When spacing is 200nm between each waveguide, propagation field figure in the z-direction is switched in "off" state；
Specific embodiment
As shown in Figure 1 and Figure 2, a kind of silicon substrate mode selection switch based on horizontal three-core coupler of the invention, including
Substrate layer 1 is equipped with under-clad layer 2 on substrate layer, is covered with upper caldding layer on under-clad layer 2.
Specifically, be successively covered with from left to right on under-clad layer 2 left side first adulterate planar waveguide layer 13, input waveguide 3,
Planar waveguide layer 15 is adulterated in left side second, planar waveguide layer 16, trunk waveguide 9, right side the are adulterated in central capacitor, right side second
One doping planar waveguide layer 14, adulterates in left side first and is equipped with left electrodes 11 on planar waveguide layer 13, adulterates on right side first
Planar waveguide layer 14 is equipped with right electrodes 12.Input waveguide 3 adulterates planar waveguide layer 13 and left electrodes by left side first
11 are connected, and trunk waveguide 9 adulterates planar waveguide layer 14 by right side first and is connected with right electrodes 12.
Wherein, central capacitor includes doped silicon layer 4 on the left of central capacitor, HfO on the left of central capacitor25, middle electrocardio
ITO layer 6, central capacitor right side HfO on the left of container2Doped silicon layer 8 on the right side of layer 7 and central capacitor, wherein central capacitor
Left side doped silicon layer 4 adulterates planar waveguide layer 15 by left side second and is connected with input waveguide 3, doping on the right side of central capacitor
Silicon layer 8 adulterates planar waveguide layer 16 by right side second and is connected with trunk waveguide 9.The composition of ITO layer on the left of central capacitor
Material is indium seleno oxide ITO, graphene, G2S2T5And G2S2S4T1。
Add applied voltage in the left side ITO layer 6 of left electrodes 11, right electrodes 12 and central capacitor.
Silicon substrate mode selection switch of the invention includes the central horizontal of phase-change material including two silicon outer waveguides and one
MOS (metal-oxide-semiconductor) capacitor, by using horizontal silicon/HfO2/ITO/HfO2The MOS capacitor of/silicon,
Double carriers accumulation layered scheme provides rapid phase transition and efficient switch conversion rate.Indium selenolite is adjusted by additional grid voltage
The carrier concentration of object biproduct poly layer realizes perfect switch state.By using full vector model, to based on center MOS
The "ON" "Off" state of the MOS mould of the three-core coupler of capacitor is optimized.
Mode selection switch working principle is as follows: (1), can be in the case where not applying grid voltage under "off" state
Meet the phase-matching condition between three-dimensional waveguide and three-dimensional waveguide coupler (TWC).The quasi- TE of input0Mode can be multiplexed into
The quasi- TE of trunk waveguide1Mode.(2) under "open" state, on the ito layer plus negative grid voltage, due to ENZ effect, center MOS
The index variation of pattern is larger, and the condition that matches will be destroyed.Input quasi- TE0Mode will switch back into input waveguide and in incoming wave
The output port output led.
Technical solution of the present invention and beneficial effect are described in further detail below with reference to embodiment.
Fig. 6, a kind of silicon substrate mode selection switch based on horizontal three-core coupler shown in Fig. 7, belong to specific condition
Analysis example, the spacing calculated in accumulated layers with a thickness of 10nm, between each waveguide is 200nm, and crosstalk is -19.21dB, is disappeared
Mistake rate is 17.8dB, and insertion loss is the propagation field of the optimization design of parameter when being -1.4dB.
Fig. 3-Fig. 5 is the super model field pattern of the silicon substrate mode selection switch based on three-core coupler；In input waveguide
For 400nm, main line waveguide is 860nm, and the width of ITO is 50nm, HfO2Width be 10nm, the width of silicon is 307.5nm, respectively
Waveguide and capacitor with a thickness of 220nm, when being divided into 200nm with a thickness of 30nm, and between each waveguide between any two of sheet
Super model field distribution, Fig. 3 represent the TM-A super model in the domain z, and Fig. 4 represents the TM-B super model in the domain z, and Fig. 5 represents the TM-C super model in the domain z.
Claims (4)
1. a kind of silicon substrate mode selection switch based on horizontal three-core coupler, it is characterised in that: including substrate layer (1),
Substrate layer is equipped with under-clad layer (2), and left side first is equipped on under-clad layer (2) and adulterates planar waveguide layer (13), left side second is mixed
Miscellaneous planar waveguide layer (15), planar waveguide layer (14) are adulterated on right side first and planar waveguide layer (16) are adulterated on right side second,
Planar waveguide layer (13) are adulterated in the left side first and left side second is adulterated between planar waveguide layer (15), are equipped with input waveguide
(3), it is adulterated between planar waveguide layer (16) in the right side first doping planar waveguide layer (14) and right side second, is equipped with trunk
Waveguide (9) is adulterated between planar waveguide layer (16) in the left side second doping planar waveguide layer (15) and right side second, is equipped with
Central capacitor；The left side first adulterates planar waveguide layer (13) and is equipped with left electrodes (11), and the right side first is adulterated
Planar waveguide layer (14) is equipped with right electrodes (12)；The input waveguide (3) adulterates planar waveguide layer by left side first
(13) it is connected with left electrodes (11), the trunk waveguide (9) adulterates planar waveguide layer (14) and right side by right side first
Electrode (12) is connected；
Add applied voltage on the left electrodes (11), right electrodes (12) and central capacitor；
Upper caldding layer (10) are covered on the under-clad layer (2).
2. the silicon substrate mode selection switch according to claim 1 based on three-core coupler, it is characterised in that: in described
Electrocardio container includes doped silicon layer (4) on the left of central capacitor, HfO on the left of central capacitor2(5), ITO on the left of central capacitor
HfO on the right side of layer (6), central capacitor2Doped silicon layer (8) on the right side of layer (7) and central capacitor, above-mentioned each material layer is along under-clad layer
(2) horizontal direction is sequentially connected, and constitutes double carriers accumulated layers；Wherein, doped silicon layer (4) is logical on the left of the central capacitor
It crosses the second doping planar waveguide layer (15) of left side to be connected with input waveguide (3), doped silicon layer (8) passes through on the right side of central capacitor
It adulterates planar waveguide layer (16) and is connected with trunk waveguide (9) in right side second；In the left electrodes (11), right electrodes (12)
And add applied voltage in the left side ITO layer (6) of central capacitor.
3. the silicon substrate mode selection switch according to claim 2 based on three-core coupler, it is characterised in that: in described
The constituent material of ITO layer (6) is indium seleno oxide ITO, graphene, G on the left of electrocardio container2S2T5And G2S2S4T1。
4. the silicon substrate mode selection switch according to claim 1 based on three-core coupler, it is characterised in that: the master
Mode in dry waveguide (9) is any higher order mode.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110716327A (en) * | 2019-10-21 | 2020-01-21 | 浙江大学 | Silicon electro-optical modulator based on ITO directional coupler |
| CN110727048A (en) * | 2019-11-01 | 2020-01-24 | 电子科技大学 | Graphene surface plasmon polariton-based tunable power coupler facing 2um waveband |
| CN111240051A (en) * | 2020-03-06 | 2020-06-05 | 桂林电子科技大学 | Directional coupling type electro-optical modulator based on surface plasma |
| CN113050222A (en) * | 2021-04-16 | 2021-06-29 | 吉林大学 | Reconfigurable polymer mode converter for mode division multiplexing system |
| CN113238397A (en) * | 2021-05-17 | 2021-08-10 | 桂林电子科技大学 | Optical switch for network-on-chip interconnection |
| CN113300965A (en) * | 2021-05-17 | 2021-08-24 | 桂林航天工业学院 | Cellular router for network-on-chip interconnection |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110716327A (en) * | 2019-10-21 | 2020-01-21 | 浙江大学 | Silicon electro-optical modulator based on ITO directional coupler |
| CN110716327B (en) * | 2019-10-21 | 2020-09-15 | 浙江大学 | Silicon electro-optical modulator based on ITO directional coupler |
| CN110727048A (en) * | 2019-11-01 | 2020-01-24 | 电子科技大学 | Graphene surface plasmon polariton-based tunable power coupler facing 2um waveband |
| CN110727048B (en) * | 2019-11-01 | 2020-11-24 | 电子科技大学 | Graphene surface plasmon polariton-based tunable power coupler facing 2um waveband |
| CN111240051A (en) * | 2020-03-06 | 2020-06-05 | 桂林电子科技大学 | Directional coupling type electro-optical modulator based on surface plasma |
| CN113050222A (en) * | 2021-04-16 | 2021-06-29 | 吉林大学 | Reconfigurable polymer mode converter for mode division multiplexing system |
| CN113238397A (en) * | 2021-05-17 | 2021-08-10 | 桂林电子科技大学 | Optical switch for network-on-chip interconnection |
| CN113300965A (en) * | 2021-05-17 | 2021-08-24 | 桂林航天工业学院 | Cellular router for network-on-chip interconnection |
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