CN105759534A - Silicon-based electro-optic logic AND/NAND gate - Google Patents
Silicon-based electro-optic logic AND/NAND gate Download PDFInfo
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- CN105759534A CN105759534A CN201610209797.5A CN201610209797A CN105759534A CN 105759534 A CN105759534 A CN 105759534A CN 201610209797 A CN201610209797 A CN 201610209797A CN 105759534 A CN105759534 A CN 105759534A
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
- G02F3/02—Optical bistable devices
- G02F3/022—Optical bistable devices based on electro-, magneto- or acousto-optical elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/14—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
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Abstract
The invention discloses a silicon-based electro-optic logic AND/NAND gate. The silicon-based electro-optic logic AND/NAND gate comprises a first 2*2MZI type electro-optic switch, a second 2*2MZI type electro-optic switch and a 2*1MMI coupler. Each of the first and second 2*2MZI type electro-optic switches comprises a first input end, a second input end, a first output end and a second output end, and the 2*1MMI coupler comprises a first input end, a second input and an output end. The first output end of the first 2*2MZI type electro-optic switch is connected with the first input end of the second 2*2MZI type electro-optic switch, and the first output end of the second 2*2MZI type electro-optic switch is an AND logic output end. The second output end of the second 2*2MZI type electro-optic switch is connected with the first input end of the 2*1MMI coupler, the second output end of the first 2*2MZI type electro-optic switch is connected with the second input end of the 2*1MMI coupler, and the output end of the 2*1MMI coupler is an NAND logic output end. The silicon-based electro-optic logic AND/NAND gate has the advantages of high extinction ratio, high speed, large broadband and large fabrication tolerance.
Description
Technical field
The present invention relates to a kind of silica-based light logic and/and not gate, especially relate to a kind of silicon-based electro-optic logical AND/NAND gate.
Background technology
Along with the swift and violent growth of present information amount, processor information processing capability is required more and more higher by people, and therefore existing processor mostly adopts parallel coenocytism.And between core and core and core and the memory element of outside, how to realize the exchange of efficient data and be processed into for problem demanding prompt solution.Although the application that speed, power consumption and bandwidth restrictions electrical interconnection is in the transmission of modern high performance information and process system, form so-called " electronic bottleneck ".But just desirable information carrier, has high speed, Large Copacity and parallel intrinsic characteristic, as current advantage technology, silicon based photon can be solve this problem provide effective approach.
Optical logic device plays key player in light exchange, optical oomputing and light network, of increased attention in recent years.Light logic and/and not gate are basic optical logic devices.Existing silica-based light logic and/and not gate, different according to the mode processing optical information, silica-based all-optical logic and/and not gate, silica-based hot light logic and/and not gate and silicon-based electro-optic logical AND/NAND gate can be divided into.Silica-based all-optical logic and/and not gate are by utilizing pump light to carry out the output of control signal light, and its operation principle mainly utilizes the nonlinear effect of waveguide, the such as two-photon absorption effect in silicon materials directly or indirectly.Although silica-based all-optical logic and/and not gate can quickly run, but big pulse when realizing logic function by nonlinear effect, is needed to make it be not easy to large-scale integrated.Silica-based hot light logic and/and not gate are to utilize the thermo-optic effect in silicon materials to realize signal of telecommunication control signal light, the added losses being not accompanied by, it is simple to large-scale integrated, but its speed is slow, it is in a millisecond magnitude, far from the requirement meeting high-speed light exchange, optical oomputing and light network.Silicon-based electro-optic logical AND/NAND gate utilizes silicon materials to have stronger carrier dispersion effect to make up silica-based hot light logic and/and the slow-footed defect of not gate.Carrier dispersion effect is indirectly electrooptic effect in silicon materials, utilizes applied voltage to cause carrier concentration to change thus changing absorptance and effective refractive index.Micro-ring resonant cavity has the advantages such as flexible, compact and low-power consumption, so being considered as the desirable basic optical construction unit building silicon-based electro-optic logical AND/NAND gate.But, adopt micro-ring resonant cavity configuration silicon-based electro-optic logical AND/NAND gate, due between ring with ring couple and different wave length tuning conversion time, it is easy to occur that burr causes extinction ratio relatively low, and limited narrower bandwidth by its objective structure, make tolerance less.
Summary of the invention
The technical problem to be solved be to provide a kind of have High Extinction Ratio, at a high speed, the silicon-based electro-optic logical AND/NAND gate of big bandwidth and tolerance of producing extensively.
This invention address that the technical scheme that above-mentioned technical problem adopts is: a kind of silicon-based electro-optic logical AND/NAND gate, 2 × 2MZI type the electrooptical switching identical including two structures and 2 × 1MMI bonder, described 2 × 2MZI type electrooptical switching has first input end, the second input, the first outfan and the second outfan, described 2 × 1MMI bonder has first input end, the second input and outfan, 2 × 2MZI type electrooptical switching respectively one 2 × 2MZI type electrooptical switching that two described structures are identical and 22 × 2MZI type electrooptical switching；First outfan of described one 2 × 2MZI type electrooptical switching and the first input end of described 22 × 2MZI type electrooptical switching connect, first outfan of described 22 × 2MZI type electrooptical switching is and logic output terminal, second outfan of described 22 × 2MZI type electrooptical switching and the first input end of described 2 × 1MMI bonder connect, second outfan of described one 2 × 2MZI type electrooptical switching and the second input of described 2 × 1MMI bonder connect, and the outfan of described 2 × 1MMI bonder is NAND Logic outfan.
Described 2 × 2MZI type electrooptical switching includes two the identical phase displacement arm of structure 2 × 2MMI bonders identical with two structures, described 2 × 2MMI bonder has first input end, the second input, the first outfan and the second outfan, 2 × 2MMI bonder respectively one 2 × 2MMI bonder and the 22 × 2MMI bonder that two described structures are identical, phase displacement arm respectively first-phase displacement arm that two described structures are identical and second-phase displacement arm；nullThe first input end of described one 2 × 2MMI bonder is the first input end of 2 described × 2MZI，Second input of described one 2 × 2MMI bonder is the second input of described 2 × 2MZI type electrooptical switching，First outfan of described one 2 × 2MMI bonder is connected by the first input end of described first-phase displacement arm and described 22 × 2MMI bonder，Second outfan of described one 2 × 2MMI bonder is connected by the second input of described second-phase displacement arm and described 22 × 2MMI bonder，First outfan of described 22 × 2MMI bonder is the first outfan of described 2 × 2MZI type electrooptical switching，Second outfan of described 22 × 2MMI bonder is the second outfan of described 2 × 2MZI type electrooptical switching.This structure passes through two identical MZI type electrooptical switchinges based on interference effect of structure and a 2 × 1MMI coupler combinations based on Self imaging effect, and utilize the 2 × 2MMI bonder based on Self imaging effect as the beam splitting of MZI type electrooptical switching and to close beam function unit, bandwidth speed can be expanded further and improve extinction ratio, and there is tolerance of relatively producing extensively.
Described phase displacement arm is rectangular waveguide, described rectangular waveguide includes waveguide body and substrate, described waveguide body includes sandwich layer and is coated on the covering outside described sandwich layer, described substrate is fixed on the bottom of described covering, the material of described covering is pure silicon dioxide, described sandwich layer includes the upper strata being sequentially connected with from top to bottom, intermediate layer and lower floor, the thickness of described upper strata and described lower floor is equal and its material is silicon, described intermediate layer is made up of the dielectric piece that the identical graphene film of three thickness and four thickness are identical, a piece of described graphene film is inserted between dielectric piece described in every adjacent two panels.This structure constitutes sandwich layer by the lower floor of material to be the upper strata of silicon, intermediate layer and material be silicon, intermediate layer is made up of the dielectric piece that the identical graphene film of three thickness and four thickness are identical, graphene film and dielectric piece and silicon (the upper and lower) combine, when applying external voltage, the chemical potential of Graphene in graphene film is caused to change, thus changing equivalent refractive index, reduce insertion loss, improve extinction ratio and speed further, increase bandwidth and make tolerance.
The thickness of described upper strata and described lower floor is 170nm；The thickness of described graphene film is 0.34nm；The material of described dielectric piece is hafnium oxide, and the thickness of described dielectric piece is 5nm.This structure maintain High Extinction Ratio, at a high speed, reduce power consumption further while big bandwidth and tolerance advantage of producing extensively, shorten device length, it is simple to following large-scale integrated.
Compared with prior art, it is an advantage of the current invention that the 2 × 2MZI type electrooptical switching based on interference effect identical by two structures and a 2 × 1MMI bonder based on Self imaging effect construct silicon-based electro-optic logical AND/NAND gate, 2 × 2MZI type electrooptical switching has first input end, the second input, the first outfan and the second outfan, 2 × 1MMI bonder has first input end, the second input and outfan, 2 × 2MZI type electrooptical switching respectively one 2 × 2MZI type electrooptical switching that two structures are identical and 22 × 2MZI type electrooptical switching；First outfan of one 2 × 2MZI type electrooptical switching and the first input end of 22 × 2MZI type electrooptical switching connect, first outfan of 22 × 2MZI type electrooptical switching is and logic output terminal, second outfan of 22 × 2MZI type electrooptical switching and the first input end of 2 × 1MMI bonder connect, second outfan of one 2 × 2MZI type electrooptical switching and the second input of 2 × 1MMI bonder connect, and the outfan of 2 × 1MMI bonder is NAND Logic outfan；When input light inputs from the first input end of one 2 × 2MZI type electrooptical switching, if the voltage signal being carried in one 2 × 2MZI type electrooptical switching is in low level, one 2 × 2MZI type electrooptical switching is in forked working state, optical signal exports from the second outfan of one 2 × 2MZI type electrooptical switching, and through the second input input of 2 × 1MMI bonder, 2 × 1MMI bonder exports from NAND Logic outfan after optical signal carries out coupling processing；When input light inputs from the first input end of one 2 × 2MZI type electrooptical switching, if the voltage signal being carried in one 2 × 2MZI type electrooptical switching is in high level, one 2 × 2MZI type electrooptical switching is in straight-through duty, optical signal exports from the first outfan of one 2 × 2MZI type electrooptical switching, and input through the first input end of 22 × 2MZI type electrooptical switching, if the voltage signal being carried in 22 × 2MZI type electrooptical switching is in low level, 22 × 2MZI type electrooptical switching is in forked working state, optical signal exports from the second outfan of 22 × 2MZI type electrooptical switching, and input through the first input end of 2 × 1MMI bonder, 2 × 1MMI bonder exports from NAND Logic outfan after optical signal carries out coupling processing；When input light inputs from the first input end of one 2 × 2MZI type electrooptical switching, if the voltage signal being carried in one 2 × 2MZI type electrooptical switching is in high level, one 2 × 2MZI type electrooptical switching is in straight-through duty, optical signal exports from the first outfan of one 2 × 2MZI type electrooptical switching, and input through the first input end of 22 × 2MZI type electrooptical switching, if the voltage signal being carried in 22 × 2MZI type electrooptical switching is in high level, 22 × 2MZI type electrooptical switching is in straight-through duty, optical signal exports from the first outfan of 22 × 2MZI type electrooptical switching, namely export from logic output terminal；MZI type electrooptical switching based on interference effect and the MMI bonder based on Self imaging effect have at a high speed, the advantage of big bandwidth and tolerance of producing extensively, silicon-based electro-optic logical AND/NAND gate that both realize is adopted to have at a high speed, the characteristic of big bandwidth and tolerance of producing extensively, 2 × 1MMI bonder has conjunction Shu Zuoyong simultaneously, what can compensate two 2 × 2MZI type electrooptical switching objective realities cannot turn off the harmful effect that extinction ratio is caused by phenomenon, thus improving the extinction ratio of electric light logical AND/NAND gate, silicon-based electro-optic logical AND/the NAND gate finally making the present invention has High Extinction Ratio, at a high speed, big bandwidth and tolerance of producing extensively.
Accompanying drawing explanation
Fig. 1 is the structure chart of the silicon-based electro-optic logical AND/NAND gate of the present invention；
Fig. 2 is the structure chart of 2 × 2MZI type electrooptical switching of the silicon-based electro-optic logical AND/NAND gate of the present invention；
Fig. 3 is the sectional view of the phase displacement arm of the silicon-based electro-optic logical AND/NAND gate of the present invention；
Fig. 4 is 2 × 2MZI type electrooptical switching of the silicon-based electro-optic logical AND/NAND gate of the present invention is output spectrum figure during 0.5eV in chemical potential；
Fig. 5 is 2 × 2MZI type electrooptical switching of the silicon-based electro-optic logical AND/NAND gate of the present invention is output spectrum figure during 0.6eV in chemical potential；
Fig. 6 is the silicon-based electro-optic logical AND/NAND gate of present invention dynamic response result figure under the 10Gbit/s speed of service.
Detailed description of the invention
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.
Embodiment one: as shown in Figure 1, a kind of silicon-based electro-optic logical AND/NAND gate, 2 × 2MZI type the electrooptical switching identical including two structures and 2 × 1MMI bonder 1,2 × 2MZI type electrooptical switching has first input end, the second input, the first outfan and the second outfan, 2 × 1MMI bonder 1 (multi-mode interference coupler) has first input end, the second input and outfan, 2 × 2MZI type electrooptical switching respectively one 2 × 2MZI type electrooptical switching 2 and the 22 × 2MZI type electrooptical switching 3 that two structures are identical；First outfan of one 2 × 2MZI type electrooptical switching 2 and the first input end of 22 × 2MZI type electrooptical switching 3 connect, first outfan of 22 × 2MZI type electrooptical switching 3 is and logic output terminal, second outfan of 22 × 2MZI type electrooptical switching 3 and the first input end of 2 × 1MMI bonder 1 connect, second outfan of one 2 × 2MZI type electrooptical switching 2 and the second input of 2 × 1MMI bonder 1 connect, and the outfan of 2 × 1MMI bonder 1 is NAND Logic outfan.
In the present embodiment, 2 × 2MZI type electrooptical switching and 2 × 1MMI bonder 1 all adopt the matured product of its technical field.
Embodiment two: as shown in Figure 1, a kind of silicon-based electro-optic logical AND/NAND gate, 2 × 2MZI type the electrooptical switching identical including two structures and 2 × 1MMI bonder 1,2 × 2MZI type electrooptical switching has first input end, the second input, the first outfan and the second outfan, 2 × 1MMI bonder 1 has first input end, the second input and outfan, 2 × 2MZI type electrooptical switching respectively one 2 × 2MZI type electrooptical switching 2 and the 22 × 2MZI type electrooptical switching 3 that two structures are identical；First outfan of one 2 × 2MZI type electrooptical switching 2 and the first input end of 22 × 2MZI type electrooptical switching 3 connect, first outfan of 22 × 2MZI type electrooptical switching 3 is and logic output terminal, second outfan of 22 × 2MZI type electrooptical switching 3 and the first input end of 2 × 1MMI bonder 1 connect, second outfan of one 2 × 2MZI type electrooptical switching 2 and the second input of 2 × 1MMI bonder 1 connect, and the outfan of 2 × 1MMI bonder 1 is NAND Logic outfan.
As shown in Figure 2, in the present embodiment, 2 × 2MZI type electrooptical switching includes two the identical phase displacement arm of structure 2 × 2MMI bonders identical with two structures, 2 × 2MMI bonder has first input end, the second input, the first outfan and the second outfan, 2 × 2MMI bonder respectively one 2 × 2MMI bonder 4 and the 22 × 2MMI bonder 5 that two structures are identical, phase displacement arm respectively first-phase displacement arm 6 that two structures are identical and second-phase displacement arm 7；The first input end of one 2 × 2MMI bonder 4 is the first input end of 2 × 2MZI type electrooptical switching, second input of one 2 × 2MMI bonder 4 is the second input of 2 × 2MZI type electrooptical switching, first outfan of one 2 × 2MMI bonder 4 is connected by the first input end of first-phase displacement arm 6 and 22 × 2MMI bonder 5, second outfan of one 2 × 2MMI bonder 4 is connected by the second input of second-phase displacement arm 7 and 22 × 2MMI bonder 5, first outfan of 22 × 2MMI bonder 5 is the first outfan of 2 × 2MZI type electrooptical switching, second outfan of 22 × 2MMI bonder 5 is the second outfan of 2 × 2MZI type electrooptical switching.
In the present embodiment, 2 × 1MMI bonder 1,2 × 2MMI bonder and phase displacement arm all adopt the matured product of its technical field.
Embodiment three: as shown in Figure 1, a kind of silicon-based electro-optic logical AND/NAND gate, 2 × 2MZI type the electrooptical switching identical including two structures and 2 × 1MMI bonder 1,2 × 2MZI type electrooptical switching has first input end, the second input, the first outfan and the second outfan, 2 × 1MMI bonder 1 has first input end, the second input and outfan, 2 × 2MZI type electrooptical switching respectively one 2 × 2MZI type electrooptical switching 2 and the 22 × 2MZI type electrooptical switching 3 that two structures are identical；First outfan of one 2 × 2MZI type electrooptical switching 2 and the first input end of 22 × 2MZI type electrooptical switching 3 connect, first outfan of 22 × 2MZI type electrooptical switching 3 is and logic output terminal, second outfan of 22 × 2MZI type electrooptical switching 3 and the first input end of 2 × 1MMI bonder 1 connect, second outfan of one 2 × 2MZI type electrooptical switching 2 and the second input of 2 × 1MMI bonder 1 connect, and the outfan of 2 × 1MMI bonder 1 is NAND Logic outfan.
As shown in Figure 2, in the present embodiment, 2 × 2MZI type electrooptical switching includes two the identical phase displacement arm of structure 2 × 2MMI bonders identical with two structures, 2 × 2MMI bonder has first input end, the second input, the first outfan and the second outfan, 2 × 2MMI bonder respectively one 2 × 2MMI bonder 4 and the 22 × 2MMI bonder 5 that two structures are identical, phase displacement arm respectively first-phase displacement arm 6 that two structures are identical and second-phase displacement arm 7；The first input end of one 2 × 2MMI bonder 4 is the first input end of 2 × 2MZI type electrooptical switching, second input of one 2 × 2MMI bonder 4 is the second input of 2 × 2MZI type electrooptical switching, first outfan of one 2 × 2MMI bonder 4 is connected by the first input end of first-phase displacement arm 6 and 22 × 2MMI bonder 5, second outfan of one 2 × 2MMI bonder 4 is connected by the second input of second-phase displacement arm 7 and 22 × 2MMI bonder 5, first outfan of 22 × 2MMI bonder 5 is the first outfan of 2 × 2MZI type electrooptical switching, second outfan of 22 × 2MMI bonder 5 is the second outfan of 2 × 2MZI type electrooptical switching.
As shown in Figure 3, in the present embodiment, phase displacement arm is rectangular waveguide, rectangular waveguide includes waveguide body and substrate, waveguide body includes sandwich layer and is coated on the covering 8 outside sandwich layer, substrate is fixed on the bottom of covering 8, the material of covering 8 is pure silicon dioxide, sandwich layer includes the upper strata 9 being sequentially connected with from top to bottom, intermediate layer and lower floor 10, the thickness of upper strata 9 and lower floor 10 is equal and its material is silicon, intermediate layer is made up of the dielectric piece 12 that the identical graphene film 11 of three thickness is identical with four thickness, piece of graphite alkene sheet 11 is inserted between every adjacent two panels dielectric piece 12.
In the present embodiment, 2 × 1MMI bonder 1 and 2 × 2MMI bonder all adopt the matured product of its technical field.
Embodiment four: as shown in Figure 1, a kind of silicon-based electro-optic logical AND/NAND gate, 2 × 2MZI type the electrooptical switching identical including two structures and 2 × 1MMI bonder 1,2 × 2MZI type electrooptical switching has first input end, the second input, the first outfan and the second outfan, 2 × 1MMI bonder 1 has first input end, the second input and outfan, 2 × 2MZI type electrooptical switching respectively one 2 × 2MZI type electrooptical switching 2 and the 22 × 2MZI type electrooptical switching 3 that two structures are identical；First outfan of one 2 × 2MZI type electrooptical switching 2 and the first input end of 22 × 2MZI type electrooptical switching 3 connect, first outfan of 22 × 2MZI type electrooptical switching 3 is and logic output terminal, second outfan of 22 × 2MZI type electrooptical switching 3 and the first input end of 2 × 1MMI bonder 1 connect, second outfan of one 2 × 2MZI type electrooptical switching 2 and the second input of 2 × 1MMI bonder 1 connect, and the outfan of 2 × 1MMI bonder 1 is NAND Logic outfan.
As shown in Figure 2, in the present embodiment, 2 × 2MZI type electrooptical switching includes two the identical phase displacement arm of structure 2 × 2MMI bonders identical with two structures, 2 × 2MMI bonder has first input end, the second input, the first outfan and the second outfan, 2 × 2MMI bonder respectively one 2 × 2MMI bonder 4 and the 22 × 2MMI bonder 5 that two structures are identical, phase displacement arm respectively first-phase displacement arm 6 that two structures are identical and second-phase displacement arm 7；The first input end of one 2 × 2MMI bonder 4 is the first input end of 2 × 2MZI type electrooptical switching, second input of one 2 × 2MMI bonder 4 is the second input of 2 × 2MZI type electrooptical switching, first outfan of one 2 × 2MMI bonder 4 is connected by the first input end of first-phase displacement arm 6 and 22 × 2MMI bonder 5, second outfan of one 2 × 2MMI bonder 4 is connected by the second input of second-phase displacement arm 7 and 22 × 2MMI bonder 5, first outfan of 22 × 2MMI bonder 5 is the first outfan of 2 × 2MZI type electrooptical switching, second outfan of 22 × 2MMI bonder 5 is the second outfan of 2 × 2MZI type electrooptical switching.
As shown in Figure 3, in the present embodiment, phase displacement arm is rectangular waveguide, rectangular waveguide includes waveguide body and substrate, waveguide body includes sandwich layer and is coated on the covering 8 outside sandwich layer, substrate is fixed on the bottom of covering 8, the material of covering 8 is pure silicon dioxide, sandwich layer includes the upper strata 9 being sequentially connected with from top to bottom, intermediate layer and lower floor 10, the thickness of upper strata 9 and lower floor 10 is equal and its material is silicon, intermediate layer is made up of the dielectric piece 12 that the identical graphene film 11 of three thickness is identical with four thickness, piece of graphite alkene sheet 11 is inserted between every adjacent two panels dielectric piece 12.
In the present embodiment, 2 × 1MMI bonder 1 and 2 × 2MMI bonder all adopt the matured product of its technical field.
In the present embodiment, the thickness of upper strata 9 and lower floor 10 is 170nm；The thickness of graphene film 11 is 0.34nm；The material of dielectric piece 12 is hafnium oxide, and the thickness of dielectric piece 12 is 5nm.
In the silicon-based electro-optic logical AND/NAND gate of the present embodiment 2 × 2MZI type electrooptical switching chemical potential be output spectrum figure during 0.5eV as shown in Figure 4, chemical potential be output spectrum figure during 0.6eV as shown in Figure 5.Analysis chart 4 and Fig. 5 are it can be seen that the crosstalk of 2 × 2MZI type electrooptical switching is low to moderate-22.2dB in 1510nm to 1600nm, and less than-24.7dB in 1531nm to 1600nm, insertion loss is less than 0.08dB.
Silicon-based electro-optic logical AND/the NAND gate of the present embodiment dynamic response result figure under the 10Gbit/s speed of service is as shown in Figure 6；Two input voltage signals respectively " 00011111100011111110 " (voltage signal 1) and " 11100100110110010011 " (voltage signal 2), being " 00000100100010010010 " through logic and operation result, logical AND inverse result is " 11111011011101101101 ".Analysis chart 6 is known and/and NOT logic correctly exports correct result in the silicon-based electro-optic logical AND/NAND gate of the present embodiment with logic output terminal and NAND Logic outfan simultaneously, and the silicon-based electro-optic of the present embodiment logical AND/NAND gate achieves minimum extinction ratio 38.5dB and maximum insertion 0.21dB under 1550nm operation wavelength.
Claims (4)
1. silicon-based electro-optic logical AND/NAND gate, it is characterized in that including two identical 2 × 2MZI type electrooptical switchinges of structure and 2 × 1MMI bonder, described 2 × 2MZI type electrooptical switching has first input end, the second input, the first outfan and the second outfan, described 2 × 1MMI bonder has first input end, the second input and outfan, 2 × 2MZI type electrooptical switching respectively one 2 × 2MZI type electrooptical switching that two described structures are identical and 22 × 2MZI type electrooptical switching；First outfan of described one 2 × 2MZI type electrooptical switching and the first input end of described 22 × 2MZI type electrooptical switching connect, first outfan of described 22 × 2MZI type electrooptical switching is and logic output terminal, second outfan of described 22 × 2MZI type electrooptical switching and the first input end of described 2 × 1MMI bonder connect, second outfan of described one 2 × 2MZI type electrooptical switching and the second input of described 2 × 1MMI bonder connect, and the outfan of described 2 × 1MMI bonder is NAND Logic outfan.
2. a kind of silicon-based electro-optic logical AND/NAND gate according to claim 1, it is characterized in that described 2 × 2MZI type electrooptical switching includes two the identical phase displacement arm of structure 2 × 2MMI bonders identical with two structures, described 2 × 2MMI bonder has first input end, the second input, the first outfan and the second outfan, 2 × 2MMI bonder respectively one 2 × 2MMI bonder and the 22 × 2MMI bonder that two described structures are identical, phase displacement arm respectively first-phase displacement arm that two described structures are identical and second-phase displacement arm；nullThe first input end of described one 2 × 2MMI bonder is the first input end of described 2 × 2MZI type electrooptical switching，Second input of described one 2 × 2MMI bonder is the second input of described 2 × 2MZI type electrooptical switching，First outfan of described one 2 × 2MMI bonder is connected by the first input end of described first-phase displacement arm and described 22 × 2MMI bonder，Second outfan of described one 2 × 2MMI bonder is connected by the second input of described second-phase displacement arm and described 22 × 2MMI bonder，First outfan of described 22 × 2MMI bonder is the first outfan of described 2 × 2MZI type electrooptical switching，Second outfan of described 22 × 2MMI bonder is the second outfan of described 2 × 2MZI type electrooptical switching.
3. a kind of silicon-based electro-optic logical AND/NAND gate according to claim 2, it is characterized in that described phase displacement arm is rectangular waveguide, described rectangular waveguide includes waveguide body and substrate, described waveguide body includes sandwich layer and is coated on the covering outside described sandwich layer, described substrate is fixed on the bottom of described covering, the material of described covering is pure silicon dioxide, described sandwich layer includes the upper strata being sequentially connected with from top to bottom, intermediate layer and lower floor, the thickness of described upper strata and described lower floor is equal and its material is silicon, described intermediate layer is made up of the dielectric piece that the identical graphene film of three thickness and four thickness are identical, a piece of described graphene film is inserted between dielectric piece described in every adjacent two panels.
4. a kind of silicon-based electro-optic logical AND/NAND gate according to claim 3, it is characterised in that the thickness of described upper strata and described lower floor is 170nm；The thickness of described graphene film is 0.34nm；The material of described dielectric piece is hafnium oxide, and the thickness of described dielectric piece is 5nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN110719098A (en) * | 2019-09-12 | 2020-01-21 | 宁波大学 | Gate capacitor-based anti-line crosstalk NAND gate circuit |
| CN116029091A (en) * | 2022-11-21 | 2023-04-28 | 之江实验室 | Chip simulation method and device based on coherent transmission matrix method and computer equipment |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108983444A (en) * | 2018-07-18 | 2018-12-11 | 宁波大学 | Based on graphene-silicon hybrid integrated optical waveguide electric light half adder |
| CN110719098A (en) * | 2019-09-12 | 2020-01-21 | 宁波大学 | Gate capacitor-based anti-line crosstalk NAND gate circuit |
| CN110719098B (en) * | 2019-09-12 | 2023-12-15 | 洛阳正硕电子科技有限公司 | Grid capacitance-based anti-line crosstalk NAND gate circuit |
| CN116029091A (en) * | 2022-11-21 | 2023-04-28 | 之江实验室 | Chip simulation method and device based on coherent transmission matrix method and computer equipment |
| CN116029091B (en) * | 2022-11-21 | 2024-02-23 | 之江实验室 | Chip simulation method and device based on coherent transmission matrix method and computer equipment |
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| CN105759534B (en) | 2018-04-24 |
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