CN105676484A - Absorption-type optical modulator structure based on ITO material - Google Patents
Absorption-type optical modulator structure based on ITO material Download PDFInfo
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- CN105676484A CN105676484A CN201610226225.8A CN201610226225A CN105676484A CN 105676484 A CN105676484 A CN 105676484A CN 201610226225 A CN201610226225 A CN 201610226225A CN 105676484 A CN105676484 A CN 105676484A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
- G02F1/0115—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass in optical fibres
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- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses an absorption-type optical modulator structure based on an ITO material. The absorption-type optical modulator structure based on the ITO material is high in modulation depth, high in extinction ratio, small in size, low in insertion loss, low in power consumption and high in velocity. The absorption-type optical modulator structure comprises a base layer (1), a first optical wave guide layer (2) which is of a trapezoid structure is arranged on the base layer (1), and an ITO layer (4), a HfO2 isolation layer (5) and a second optical wave guide layer (3) are sequentially arranged on the first optical wave guide layer (2); the absorption-type optical modulator structure based on the ITO material is used for a photon integration and optical fiber communication system.
Description
Technical field
The invention belongs to photoelectron technical field, relate to a kind of photomodulator, particularly relate to the absorption-type light modulator structure based on ITO material.
Background technology
Photomodulator is to turn the signal of telecommunication be loaded into optical signal and send into the module that optical fiber is transmitted, and is one of Primary Component in optical fiber telecommunications system. Have a wide range of applications in the generation of short pulse punching, the demultiplexing of signal, data encoding, optical interconnection, wavelength exchange, the field such as OADM, be one of the core devices of high speed optical communication system in future, have extremely wide application space. In recent years, along with data communication service explosive increase, people are more and more higher to the demand of bandwidth, this allow in following optic communication photomodulator miniaturization, integrated, low power consumption, two-forty develop into trend. In decades, discovery along with various novel optoelectronic materials, its application in opto-electronic device is paid close attention to widely and is studied, also considerable progress is achieved, such as based on the photomodulator of grapheme material (see document MingLiu, etal.Agraphene-basedbroadbandopticalmodulator.Nature, 2011, Vol474, p64-67). Research shows, the optical signal modulation of superelevation speed is likely realized based on the photomodulator of grapheme material, but, photomodulator based on this kind of novel two-dimensional material all has a problem that, namely improve modulation depth and need longer Graphene waveguide lengths, so also just improve insertion loss and power consumption, increase the size of device.
It is In that indium tin oxide (is called for short ITO)2O3Mix the semi-conducting material of Sn, it it is a kind of transparent conductive oxide semi-conducting material, there is stable chemical property, light transmission is excellent, conductive capability is good, solaode, flat pannel display, frost shield, energy saving building window, aerospace field be widely used (attack see document and write, perhaps open-minded, Zhao Peng, Tian Xiaozhen .ITO film characteristics and developing direction. Xi'an University of Architecture and Technology's journal (natural science edition), the 36th volume the 1st phase, 2004). In recent years, its application in integrated opto-electronic device also result in be paid close attention to widely (see document S.Zhu, etal.Helmy.Designofanultra-compactelectro-absorptionmodu latorcomprisedofadepositedTiN/HfO2/ITO/CustackforCMOSbac kendintegration.Opt.Express, 2011, Vol22, p17930-17947).
Hafnium oxide (HfO) is a kind of ceramic material with broad-band gap and high-k, the concern of height it is caused in recent years at industrial quarters particularly microelectronic, the gate insulator silicon dioxide (SiO) of the core devices metal oxide semiconductor field effect tube (MOSFET) of current si-substrate integrated circuit is substituted, to solve the dimension limit problem of the development of traditional Si O in current MOSFET/Si structure due to its most probable.
As above-mentioned existing photomodulator exists, the light modulation degree of depth and insertion loss, device size etc. are designed the difficult problem needing compromise to process, be that those skilled in the art need badly and solve the technical problem that.
Summary of the invention
Present invention aim at: for prior art Problems existing, it is provided that a kind of modulation depth is high, extinction ratio is high, and has the absorption-type light modulator structure based on ITO material of small size, low insertion loss, low-power consumption, two-forty simultaneously.
To achieve these goals, the technical solution used in the present invention is:
Based on the absorption-type light modulator structure of ITO material, including basal layer, on basal layer, have the first light waveguide-layer, the first trapezoidal structure of light waveguide-layer, ITO(tin indium oxide) layer, HfO2(hafnium oxide) sealing coat and the second light waveguide-layer are sequentially coated on the first light waveguide-layer.
Wherein, the material of described basal layer is SiO2。
Wherein, described first light waveguide-layer, the second light waveguide-layer material be Si.
Wherein, described second light waveguide-layer upper surface is in rectangular configuration.
Wherein, described ITO(tin indium oxide) thickness of layer is 3 ~ 10nm.
Wherein, described HfO2The thickness of (hafnium oxide) sealing coat is 5nm.
Compared with prior art, the method have the advantages that
1, relatively simple waveguiding structure design, processing technology is simple.
2, the present invention is greatly improved modulation depth and the modulation rate of manipulator, reduce insertion loss simultaneously and reduce device size, the modulators modulate degree of depth may be up to 27dB/ μm, 1 μm length photomodulator region extinction ratio up to 27dB, and there is small size (modulation realizing 3dB only needs the Graphene waveguide of 109nm length) simultaneously, insertion loss can be low to moderate 0.03dB/ μm, low-power consumption (6.59fJ/bit), modulation rate may be up to 85GHz/bit.
3, can be mutually compatible with traditional CMOS technology in photomodulator preparation technology of the present invention, it is easy to height integreted phontonics.
4, ITO(tin indium oxide) layer and HfO2The combination of (hafnium oxide) sealing coat achieves photomodulator and has small size and high performance advantage simultaneously, it is not necessary to the light modulation degree of depth and insertion loss, device size etc. are designed and does the process compromised.
Accompanying drawing explanation
Fig. 1 is embodiment of the present invention photomodulator three dimensional structure schematic diagram;
Fig. 2 is embodiment of the present invention photomodulator fiber waveguide to change curve with ITO surface carrier concentration of the absorption coefficient of light of TM mould;
Fig. 3 is in embodiment of the present invention photomodulator fiber waveguide when ITO material thickness is 10nm, the curve chart that TM mould normalized power under " ON " and " OFF " state changes along with conveying length;
Labelling in figure, 1, basal layer, the 2, first light waveguide-layer, the 3, second light waveguide-layer, 4, ITO layer, 5, HfO2Sealing coat.
Detailed description of the invention
Below in conjunction with embodiment, the invention will be further described, and described embodiment is only a part of embodiment of the present invention, is not whole embodiments. Based on the embodiment in the present invention, those of ordinary skill in the art obtain under not making creative work premise other used by embodiment, broadly fall into protection scope of the present invention.
In conjunction with accompanying drawing, the absorption-type light modulator structure based on ITO material of the present invention, as it is shown in figure 1, include basal layer, on basal layer, there is the first light waveguide-layer, the first trapezoidal structure of light waveguide-layer, ITO layer, HfO2Sealing coat and the second light waveguide-layer are sequentially coated on the first light waveguide-layer.
Wherein, the material of described basal layer is SiO2。
Wherein, described first light waveguide-layer, the second light waveguide-layer material be Si.
Wherein, described second light waveguide-layer upper surface is in rectangular configuration.
Wherein, the thickness of described ITO layer is 3 ~ 10nm.
Wherein, described HfO2The thickness of sealing coat is 5nm.
The photomodulator operation principle of the present invention is: applied voltage applies on the ito layer, the carrier concentration change assembled by modulating ITO material surface changes its optical response, thus regulating and controlling the real part of effective refractive index in fiber waveguide and the change of imaginary part, the change of the real part correspondence light phase of effective refractive index, the absorptance of the imaginary part correspondence light of effective refractive index. At certain bias electrical voltage point, the absorption coefficient of light of this fiber waveguide is very little, and optical signal almost can loss-free pass through, can as " ON " state; At another certain bias electrical voltage point, can causing the bigger absorption coefficient of light, optical signal is almost all predominantly absorbed and cannot pass through fiber waveguide, can as " OFF " state. First light waveguide-layer is set to trapezium structure, thus introduces greater area of ITO layer in the waveguide, increase the effective active area of ITO and light, substantially increase light modulation efficiency. Rationally select the thickness of ITO layer, it is possible to be obviously improved the light Absorption modulation effect of optical signal. HfO is a kind of ceramic material with broad-band gap and high-k, it is caused concern extremely in recent years at industrial quarters particularly microelectronic, the gate insulator SiO of the core devices MOSFET of current si-substrate integrated circuit is substituted, it is possible to solve the dimension limit problem of the development of traditional Si O in current MOSFET/Si structure due to its most probable. And absorption-type photomodulator preparation technology and traditional CMOS technology based on ITO material is compatible, there is the advantage being easily integrated.
Embodiment
The present embodiment based on ITO material absorption-type light modulator structure three dimensional structure schematic diagram as shown in Figure 1; The light wave adopting wavelength to be 1.55 μm, the first light waveguide-layer, the first trapezoidal structure of light waveguide-layer, ITO layer, HfO2Sealing coat and the second light waveguide-layer are sequentially coated on the first light waveguide-layer. The material of basal layer is SiO2, the material of the first light waveguide-layer and the second light waveguide-layer is Si, and the first light waveguide-layer trapezium structure length of going to the bottom is 0.3 μm, and upper base length is 0.2 μm, is highly 0.17 μm; Second light waveguide-layer upper surface is in rectangular configuration, is highly 0.17 μm, and width is 0.3 μm, HfO2The thickness of sealing coat is 5nm.
Fig. 1 is embodiment of the present invention photomodulator three dimensional structure schematic diagram, including basal layer, has the first light waveguide-layer on basal layer, the first trapezoidal structure of light waveguide-layer, ITO layer, HfO2Sealing coat and the second light waveguide-layer are sequentially coated on the first light waveguide-layer.
Fig. 2 is embodiment of the present invention photomodulator fiber waveguide to the absorption coefficient of light of TM mould with the schematic diagram of the change of ITO material surface carrier concentration, have studied the fiber waveguide impact on the absorption coefficient of light of TM mould during different ITO material thickness. Research shows when ITO material thickness is 10nm, it is possible to causing the absorption coefficient of light that fiber waveguide is sufficiently large to TM mould, this absorption coefficient of light may be up to 27dB/ μm, and these value several times are more than when ITO material thickness being absorption coefficient of light during 5nm and 3nm.
Fig. 3 is in embodiment of the present invention photomodulator fiber waveguide when ITO material thickness is 10nm, the curve chart that TM mould normalized power under " ON " and " OFF " state changes along with conveying length. It is clear from the figure that the absorption-type photomodulator based on ITO material of 1 μm of length is when " ON " state, optical signal passing through almost without loss; But when " OFF " state, optical signal is decayed rapidly along with transmission range. Result of calculation shows, it is achieved the modulation of 3dB only needs the Graphene waveguide of 109nm length, and the photomodulator of 1 μm of length can realize the extinction ratio of 27dB, and insertion loss is 0.03dB/ μm.
For a photomodulator, its modulation rate and power consumption are also the key parameters weighing its performance. Light modulation speed for light modulator structure of the present invention is mainly the restriction by RC constant, can be expressed as f3dB=1/2 π RC, the calculation expression of power consumption is Ebit=C(ΔU)2/ 4, wherein R=500 Ω is the system resistance of manipulator, and C=3.7229fJ is the system capacitance of manipulator, and Δ U=2.66V is the manipulator of the present invention voltage difference when " ON " and " OFF " state switches. Result of calculation shows, the modulation rate of photomodulator of the present invention is 85GHz/bit, and power consumption only has 6.59fJ/bit.
Claims (6)
1., based on the absorption-type light modulator structure of ITO material, including basal layer (1), basal layer (1) is provided with first light waveguide-layer (2) of trapezoidal structure, the first light waveguide-layer (2) is disposed with ITO layer (4), HfO2Sealing coat (5), the second light waveguide-layer (3).
2. the absorption-type light modulator structure based on ITO material according to claim 1, it is characterised in that the material of described basal layer is SiO2。
3. the absorption-type light modulator structure based on ITO material according to claim 1, it is characterised in that described first light waveguide-layer, the second light waveguide-layer material be Si.
4. the absorption-type light modulator structure based on ITO material according to claim 1, it is characterised in that described second light waveguide-layer upper surface is in rectangular configuration.
5. the absorption-type light modulator structure based on ITO material according to claim 1, it is characterised in that the thickness of described ITO layer is 3 ~ 10nm.
6. the absorption-type light modulator structure based on ITO material according to claim 1, it is characterised in that described HfO2The thickness of sealing coat is 5nm.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107102454A (en) * | 2017-06-16 | 2017-08-29 | 电子科技大学 | Unrelated absorption-type electrooptic modulator is polarized based on tin indium oxide optical-fiber type |
| CN107741655A (en) * | 2017-09-20 | 2018-02-27 | 北京大学 | A kind of dual-polarization based on transparent conductive oxide while independently modulated electro-optic intensity modulator |
| CN107741656A (en) * | 2017-09-21 | 2018-02-27 | 北京大学 | A kind of electro-optic intensity modulator of the polarization insensitive based on transparent conductive oxide |
| CN108107608A (en) * | 2017-11-08 | 2018-06-01 | 北京大学 | A kind of electrooptic modulator of the polarization insensitive based on transparent conductive oxide |
| CN108563030A (en) * | 2018-01-31 | 2018-09-21 | 中国地质大学（武汉） | A kind of polarization beam apparatus |
| CN109001918A (en) * | 2018-07-13 | 2018-12-14 | 电子科技大学 | A kind of low-loss optically waveguide phase shifter based on high mobility TCO thin film |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107102454A (en) * | 2017-06-16 | 2017-08-29 | 电子科技大学 | Unrelated absorption-type electrooptic modulator is polarized based on tin indium oxide optical-fiber type |
| CN107741655A (en) * | 2017-09-20 | 2018-02-27 | 北京大学 | A kind of dual-polarization based on transparent conductive oxide while independently modulated electro-optic intensity modulator |
| CN107741656A (en) * | 2017-09-21 | 2018-02-27 | 北京大学 | A kind of electro-optic intensity modulator of the polarization insensitive based on transparent conductive oxide |
| CN108107608A (en) * | 2017-11-08 | 2018-06-01 | 北京大学 | A kind of electrooptic modulator of the polarization insensitive based on transparent conductive oxide |
| CN108563030A (en) * | 2018-01-31 | 2018-09-21 | 中国地质大学（武汉） | A kind of polarization beam apparatus |
| CN109001918A (en) * | 2018-07-13 | 2018-12-14 | 电子科技大学 | A kind of low-loss optically waveguide phase shifter based on high mobility TCO thin film |
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