CN105278125A - Novel graphene polarization insensitive electro-optic modulator structure - Google Patents
Novel graphene polarization insensitive electro-optic modulator structure Download PDFInfo
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- CN105278125A CN105278125A CN201510804575.3A CN201510804575A CN105278125A CN 105278125 A CN105278125 A CN 105278125A CN 201510804575 A CN201510804575 A CN 201510804575A CN 105278125 A CN105278125 A CN 105278125A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
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Abstract
The invention discloses a novel graphene polarization insensitive electro-optic modulator structure. The structure comprises an optical waveguide basal layer, an optical waveguide layer of a trapezoidal structure is arranged above the optical waveguide basal layer, the upper surface and the two side surfaces of the optical waveguide layer are covered by an external optical waveguide layer, a first graphene layer and a second graphene layer which are completely or partially overlapped are arranged between the external optical waveguide layer and the optical waveguide layer, an isolation medium layer is arranged between the first graphene layer and the second graphene layer, the first graphene layer is connected with a first electrode, and the second arc graphene layer is connected with a second electrode. According to the invention, optical absorption coefficients of TE and TM modes can be consistently dynamically tuned at the same time, polarization insensitive modulation of optical waves is realized, the technical problem of sensitivity of a conventional graphene optical modulator to polarization direction of incident optical waves is effectively solved, the preparation process is realized more easily, the integration is easy, and the structure provided by the invention also has the advantages of high modulation rate and low power consumption.
Description
Technical field
The present invention relates to a kind of electrooptic modulator, belong to photoelectron technical field, relate to a kind of novel Graphene polarization insensitive electrooptical modulator structure in particular.
Background technology
Photomodulator electric signal is changed into light signal to send into optical fiber and carry out the module transmitted, is one of Primary Component in optical fiber telecommunications system.Have a wide range of applications in the generation of short pulse, the field such as demultiplexing, data encoding, optical interconnection, wavelength exchange, Optical Add Drop Multiplexer of signal, be one of core devices of following high speed optical communication system, have very wide application space.
Graphene is a kind of favose two-dimentional lonsdaleite structured material, is a kind of novel material, has uniqueness, excellent optoelectronics characteristic, and being considered in future is the desirable substitute of traditional semiconductor material.Graphene at room temperature has the carrier mobility of 20,000cm2/Vs, is approximately the carrier mobility more than 100 times of silicon materials, means that the electron device based on Graphene can work under superelevation speed.Graphene is under impressed voltage, and optical conductivity also can change thereupon, thus changes its refractive index and absorptivity, and meanwhile, zero bandgap structure that Graphene has, makes it can play a role in the optical wavelength range of non-constant width.In addition, at process aspect, Graphene and traditional CMOS technology compatibility, be easy to integrated, exactly because Graphene has the characteristic of these excellences, so grapheme material is considered to there is potential important application in optoelectronic device.
Studied widely based on the optical modulator of grapheme material at present, all based on traditional SOI optical waveguide structure mostly, graphene layer is laid on the surface of waveguide, bias voltage is acted on graphene platelet, optical waveguide is changed to the refractive index of incident light or absorptivity with the Fermi level changing grapheme material itself, thus reach the phase place of incident light or the modulation of amplitude (see document MingLiu, XiaoboYin, Ulin-Avila, etal.Agraphene-basedbroadbandopticalmodulator.Nature, 2011, Vol474, p64-67 and document GosciniakJacek, TanDawnTH.Theoreticalinvestigationofgraphene-basedphoton icmodulators.ScientificReports, 2013, Vol3).But all there is a common defect in the current electrooptic modulator based on grapheme material, all that polarization is correlated with, namely responsive to the polarization direction of incident light, effective modulation can only be produced to the light wave of particular polarization, and the Light Modulation DeGrain to other polarization directions, which has limited the usable range of this photomodulator.
Polarization insensitive electrooptic modulator based on Graphene is also reported, such as application number be 201410370459.0 patent of invention disclose a kind of polarization insensitive photomodulator based on Graphene: substrate, the first Graphene ridge waveguide that Graphene level embeds, the second Graphene ridge waveguide that Graphene vertically embeds, first Graphene ridge waveguide and the second Graphene ridge waveguide are all positioned on substrate, and the graphene layer embedded in the first Graphene ridge waveguide is mutually vertical with the graphene layer embedded in the second Graphene ridge waveguide.
Structure as described above, includes the Graphene of the graphene layer embedding vertical with a section that one section of level embeds simultaneously in one section of optical waveguide, higher to technological requirement, more difficult realization.
And for example application number be 201510469011.9 patent of invention disclose a kind of polarization insensitive photomodulator based on arc Graphene, comprise optical waveguide basalis, the top of optical waveguide basalis is provided with dielectric layer, the top of dielectric layer is provided with D shape ducting layer, the periphery of D shape ducting layer is coated with the second arc graphene layer, the periphery of the second arc graphene layer is coated with the first arc graphene layer, the periphery of the first arc graphene layer is coated with square wave conducting shell, between square wave conducting shell and the first arc graphene layer, spacer medium layer is provided with between first arc graphene layer and the second arc graphene layer and between the second arc graphene layer and D shape ducting layer, first arc graphene layer extends out from the side of D shape waveguide and is connected with the first electrode, and the second arc graphene layer extends out from the opposite side of D shape ducting layer and is connected with the second electrode.
As described above based on D shape waveguiding structure, to have nothing to do modulation effect for realizing good polarization, in the preparation technology realizing the waveguide of D shape, there is larger difficulty.
As above-mentioned existing based on Problems existing in graphene electro-optical modulator, it is all the technical matters that those skilled in the art need solution badly.
Summary of the invention
Instant invention overcomes the deficiencies in the prior art, provide a kind of novel Graphene polarization insensitive electrooptical modulator structure, solve the more difficult realization of Graphene photomodulator preparation technology in the past and the polarization direction sensitive issue to incident light wave.
For solving above-mentioned technical matters, the present invention by the following technical solutions:
A kind of novel Graphene polarization insensitive electrooptical modulator structure, comprise optical waveguide basalis, the top of optical waveguide basalis is provided with the light waveguide-layer of trapezium structure, the upper surface of light waveguide-layer and two sides are coated with outer light waveguide-layer, the first graphene layer and second graphene layer of all or part of overlap is provided with between outer light waveguide-layer and light waveguide-layer, spacer medium layer is provided with between first graphene layer and the second graphene layer, described first graphene layer extends out from the side of light waveguide-layer two sides and is connected with the first electrode, described second arc graphene layer extends out from the opposite side of light waveguide-layer and is connected with the second electrode.
As first prioritization scheme of the present invention, the two sides of described light waveguide-layer are all the dip plane having certain angle of inclination.
As second prioritization scheme of the present invention, the xsect of described outer light waveguide-layer is rectangle, semicircle or half elliptic.
As the 3rd prioritization scheme of the present invention, the thickness of described spacer medium layer is 5nm-100nm.
As the 4th prioritization scheme of the present invention, described outer light waveguide-layer is identical with light waveguide-layer material, and this material is any one in silicon, germanium, germanium-silicon alloy, Group III-V semiconductor or II-IV race semiconductor.
As the 5th prioritization scheme of the present invention, described spacer medium layer is made up of insulating material, and this insulating material is Si oxide, silicon oxides of nitrogen or boron nitride.
As the 6th prioritization scheme of the present invention, the material of described first electrode and the second electrode is any one or any two or more alloy in gold, silver, copper, platinum, titanium, nickel, cobalt, palladium.
Compared with prior art, the invention has the beneficial effects as follows:
1, the optical waveguide that the present invention arranges trapezium structure is introduced has tilted-putted graphene layer, apply bias voltage, consistent dynamic tuning can be carried out to the absorption coefficient of light of TE with TM mould simultaneously, thus realize modulating the polarization insensitive of light wave, efficiently solve the technical barrier of current Graphene photomodulator to the polarization direction sensitivity of incident light wave.
2, the optical waveguide of trapezium structure of the present invention is relative to D shape waveguiding structure, more easily realizes in preparation technology.
3, can be mutually compatible with traditional SOI, CMOS technology in electrooptic modulator preparation technology of the present invention, be easy to integrated, and there is modulation rate advantage high, low in energy consumption.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Fig. 1 is the cross sectional representation of the invention process exception light waveguide-layer modulator optical waveguide when being rectangle;
Fig. 2 is the cross sectional representation of the invention process exception light waveguide-layer modulator optical waveguide when being half elliptic;
Fig. 3 is the invention process exception light waveguide-layer schematic diagram that modulator optical waveguide TE, TM mould absorption coefficient change with Graphene chemical potential energy when being rectangle;
Fig. 4 is the invention process exception light waveguide-layer schematic diagram that modulator optical waveguide TE, TM mould absorption coefficient change with Graphene chemical potential energy when being half elliptic;
Fig. 5 be the invention process exception light waveguide-layer when being rectangle modulator optical waveguide TE, TM mould when opening " ON " and pass " OFF " state normalized Output optical power along with the decay pattern of propagation distance;
Fig. 6 be the invention process exception light waveguide-layer when being half elliptic modulator optical waveguide TE, TM mould when opening " ON " and pass " OFF " state normalized Output optical power along with the decay pattern of propagation distance;
Label in figure is expressed as: 1-optical waveguide basalis; 2-light waveguide-layer; The outer light waveguide-layer of 3-; 4-first graphene layer; 5-second graphene layer; 6-spacer medium layer; 7-first electrode; 8-second electrode.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further illustrated.Embodiments of the present invention include but not limited to the following example.
Embodiment
As Figure 1-Figure 2, a kind of novel Graphene polarization insensitive electrooptical modulator structure, comprise optical waveguide basalis 1, the top of optical waveguide basalis 1 is provided with the light waveguide-layer 2 of trapezium structure, the upper surface of light waveguide-layer 2 and two sides are coated with outer light waveguide-layer 3, the first graphene layer 4 and the second graphene layer 5 of all or part of overlap is provided with between outer light waveguide-layer 3 and light waveguide-layer 2, spacer medium layer 6 is provided with between first graphene layer 4 and the second graphene layer 5, described first graphene layer 4 extends out from the side of light waveguide-layer 2 two sides and is connected with the first electrode 7, described second arc graphene layer 5 extends out from the opposite side of light waveguide-layer 2 and is connected with the second electrode 8.
The two sides of described light waveguide-layer 2 are all the dip plane having certain angle of inclination.
The xsect of described outer light waveguide-layer 3 is rectangle, semicircle or half elliptic.
The thickness of described spacer medium layer 6 is 5nm-100nm.
Described outer light waveguide-layer 3 is identical with light waveguide-layer 2 material, and this material is any one in silicon, germanium, germanium-silicon alloy, Group III-V semiconductor or II-IV race semiconductor.
Described spacer medium layer 6 is made up of insulating material, and this insulating material is Si oxide, silicon oxides of nitrogen or boron nitride.
The material stating the first electrode 7 and the second electrode 8 is any one or any two or more alloy in gold, silver, copper, platinum, titanium, nickel, cobalt, palladium.
Photomodulator principle of work of the present invention is: during photomodulator work, bias voltage is added on the first graphene layer 4 and the second graphene layer 5 by electrode, by changing bias voltage, the specific inductive capacity of tuning first graphene layer 4 and the second graphene layer 5 dynamically, thus affect the real part of effective refractive index and the change of imaginary part in optical waveguide, the change of the corresponding light phase of real part of effective refractive index, the absorption of the corresponding light of imaginary part of effective refractive index.Because grapheme material is two-dimensional material, only produce strong interaction with the light signal of its plane tangent, the present invention introduces tilted-putted first graphene layer 4 and the second graphene layer 5 by the light waveguide-layer 2 arranging trapezium structure, design suitable angle of inclination, consistent dynamic tuning can be carried out to TE with the TM mould absorption coefficient of light in different polarization direction simultaneously, thus realize modulating the polarization insensitive of light wave.When bias voltage is at a certain particular value, the light loss of TE and TM mould is all very little, light signal can pass through, when bias voltage changes to another particular value, the light loss of TE and TM mould becomes larger, its light loss value almost reaches consistent, therefore TE and TM mould light is predominantly absorbed simultaneously, light signal cannot pass through, thus can tuning biased electrical pressure point, realize the irrelevant modulation of the polarization of light signal, again because Graphene has superfast carrier mobility, thus it can realize the Light Modulation of two-forty.
Below, in conjunction with concrete experimental data, the invention will be further described:
As shown in figs 1 to 6, employing wavelength is the light wave of 1.55 μm, and the material of light waveguide-layer 2 and outer light waveguide-layer 3 is Si material, and optical index is 3.47; Optical waveguide basalis 1 is SiO2 (optical index is 1.444); First graphene layer 4 and the second graphene layer 5 separate by the hexagonal boron nitride hBN material (optical index is 1.98) that spacer medium layer 6 adopts 10nm thick; The length of light waveguide-layer 2 and outer light waveguide-layer 3 is 50 μm; First electrode 7 and the second electrode 8 adopt palladium metal, and in palladium metal, plate one deck gold.
Fig. 1 is the cross sectional representation of the invention process exception light waveguide-layer modulator optical waveguide when being rectangle; The width of going to the bottom of light waveguide-layer 2 is 0.5 μm, and the degree of tilt of two sides is 50 °, and dip plane width is 0.35 μm; The height of the outer light waveguide-layer 3 of rectangle is 0.39 μm, and width is 0.5 μm.
Fig. 2 is the cross sectional representation of the invention process exception light waveguide-layer modulator optical waveguide when being half elliptic; The width of going to the bottom of light waveguide-layer 2 is 0.5 μm, and the degree of tilt of two sides is 50 °, and dip plane width is 0.35 μm; The height of the outer light waveguide-layer 3 of half elliptic is 0.39 μm.
Fig. 3 is the invention process exception light waveguide-layer schematic diagram that modulator optical waveguide TE, TM mould absorption coefficient change with Graphene chemical potential energy when being rectangle; Fig. 4 is the invention process exception light waveguide-layer schematic diagram that modulator optical waveguide TE, TM mould absorption coefficient change with Graphene chemical potential energy when being half elliptic.From figure, obviously visible, in waveguide, the imaginary part of TE mould and TM Effective index almost has consistent change along with the change of Graphene chemical potential energy, TE, TM mould reaches peak value when Graphene chemical potential energy is μ=0.51eV simultaneously, now optical waveguide has strong assimilation effect to light, light signal cannot pass through, can as " OFF " state of modulator; When μ is become 0.7eV by applying bias voltage effect, in waveguide, the imaginary values of TE mould and TM Effective index is very little, and in 10-4 magnitude, now optical waveguide is very weak to the absorption of light, and light signal can pass through, can as " ON " state.
Fig. 5 be the invention process exception light waveguide-layer when being rectangle modulator optical waveguide TE, TM mould when opening " ON " and pass " OFF " state normalized Output optical power along with the decay pattern of propagation distance; Fig. 6 be the invention process exception light waveguide-layer when being half elliptic modulator optical waveguide TE, TM mould when opening " ON " and pass " OFF " state normalized Output optical power along with the decay pattern of propagation distance., no matter in " ON " or " OFF " state, TE, TM mould has consistent change along with the change of applying bias voltage from figure obviously, namely achieves the modulation that polarization is irrelevant.Result of calculation shows, the modulation band-width of this structured light modulator 3dB is 105GHz, and its power consumption is in 23.6fJ/bit magnitude.
Be embodiments of the invention as mentioned above.Described is above each preferred embodiment of the present invention, preferred implementation in each preferred embodiment is if not obviously contradictory or premised on a certain preferred implementation, each preferred implementation can stack combinations use arbitrarily, design parameter in described embodiment and embodiment is only the invention proof procedure in order to clear statement inventor, and be not used to limit scope of patent protection of the present invention, scope of patent protection of the present invention is still as the criterion with its claims, the equivalent structure change that every utilization instructions of the present invention and accompanying drawing content are done, in like manner all should be included in protection scope of the present invention.
Claims (7)
1. a novel Graphene polarization insensitive electrooptical modulator structure, comprise optical waveguide basalis (1), it is characterized in that, the top of optical waveguide basalis (1) is provided with the light waveguide-layer (2) of trapezium structure, the upper surface of light waveguide-layer (2) and two sides are coated with outer light waveguide-layer (3), the first graphene layer (4) and second graphene layer (5) of all or part of overlap is provided with between outer light waveguide-layer (3) and light waveguide-layer (2), spacer medium layer (6) is provided with between first graphene layer (4) and the second graphene layer (5), described first graphene layer (4) extends out from the side of light waveguide-layer (2) two sides and is connected with the first electrode (7), described second arc graphene layer (5) extends out from the opposite side of light waveguide-layer (2) and is connected with the second electrode (8).
2. a kind of novel Graphene polarization insensitive electrooptical modulator structure according to claim 1, it is characterized in that, the two sides of described light waveguide-layer (2) are all the dip plane having certain angle of inclination.
3. a kind of novel Graphene polarization insensitive electrooptical modulator structure according to claim 1, it is characterized in that, the xsect of described outer light waveguide-layer (3) is rectangle, semicircle or half elliptic.
4. a kind of novel Graphene polarization insensitive electrooptical modulator structure according to claim 1, it is characterized in that, the thickness of described spacer medium layer (6) is 5nm-100nm.
5. a kind of novel Graphene polarization insensitive electrooptical modulator structure according to claim 1, it is characterized in that, described outer light waveguide-layer (3) is identical with light waveguide-layer (2) material, and this material is any one in silicon, germanium, germanium-silicon alloy, Group III-V semiconductor or II-IV race semiconductor.
6. a kind of novel Graphene polarization insensitive electrooptical modulator structure according to claim 1, it is characterized in that, described spacer medium layer (6) is made up of insulating material, and this insulating material is Si oxide, silicon oxides of nitrogen or boron nitride.
7. a kind of novel Graphene polarization insensitive electrooptical modulator structure according to claim 1, it is characterized in that, the material of described first electrode (7) and the second electrode (8) is any one or any two or more alloy in gold, silver, copper, platinum, titanium, nickel, cobalt, palladium.
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105607301A (en) * | 2016-03-11 | 2016-05-25 | 电子科技大学 | Absorption modulator based on graphene polarization independence |
| CN105676484A (en) * | 2016-04-13 | 2016-06-15 | 电子科技大学 | Absorption-type optical modulator structure based on ITO material |
| CN105866884A (en) * | 2016-05-27 | 2016-08-17 | 电子科技大学 | Structural design for symmetrical-structure double-ridged graphene waveguide |
| CN106324869A (en) * | 2016-11-16 | 2017-01-11 | 电子科技大学 | Graphene-based microstrip line travelling wave absorption type optical modulator |
| CN107203053A (en) * | 2017-06-12 | 2017-09-26 | 电子科技大学 | A kind of adjustable light wave-filter based on graphene silicon waveguide |
| CN107741656A (en) * | 2017-09-21 | 2018-02-27 | 北京大学 | A kind of electro-optic intensity modulator of the polarization insensitive based on transparent conductive oxide |
| CN108121091A (en) * | 2017-12-08 | 2018-06-05 | 武汉邮电科学研究院 | A kind of electrooptic modulator and preparation method thereof |
| CN108873395A (en) * | 2018-08-10 | 2018-11-23 | 电子科技大学 | A kind of unrelated optical modulator of graphene polarization based on mode conversion |
| CN109298547A (en) * | 2017-07-24 | 2019-02-01 | 中兴光电子技术有限公司 | A kind of Terahertz modulator and modulator approach |
| CN109669282A (en) * | 2019-02-26 | 2019-04-23 | 电子科技大学 | A kind of metal-graphite alkene hybrid integrated electrode |
| CN109870832A (en) * | 2019-04-10 | 2019-06-11 | 电子科技大学 | Graphene H-type narrow slit wave-guide polarizes unrelated electrooptical modulator structure design |
| CN110687695A (en) * | 2019-11-21 | 2020-01-14 | 吉林大学 | Trapezoidal graphene-based polarization-insensitive organic polymer absorption type optical modulator |
| CN112558329A (en) * | 2020-12-02 | 2021-03-26 | 南京信息工程大学 | Polarized matte electro-optic modulator based on graphene |
| CN112630996A (en) * | 2020-12-22 | 2021-04-09 | 长沙理工大学 | Silicon nitride ridge waveguide-based embedded graphene optical modulator and manufacturing method thereof |
| EP4235278A4 (en) * | 2020-11-10 | 2024-04-10 | Huawei Technologies Co., Ltd. | Optical waveguide device and manufacturing method therefor, and electro-optic modulator |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103064200A (en) * | 2011-10-19 | 2013-04-24 | 三星电子株式会社 | Optical modulator including graphene |
| CN103094396A (en) * | 2011-11-02 | 2013-05-08 | 三星电子株式会社 | Waveguide-integrated Graphene Photodetectors |
| CN104181707A (en) * | 2014-07-30 | 2014-12-03 | 电子科技大学 | Graphene-based polarization insensitive optical modulator |
-
2015
- 2015-11-20 CN CN201510804575.3A patent/CN105278125B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103064200A (en) * | 2011-10-19 | 2013-04-24 | 三星电子株式会社 | Optical modulator including graphene |
| CN103094396A (en) * | 2011-11-02 | 2013-05-08 | 三星电子株式会社 | Waveguide-integrated Graphene Photodetectors |
| CN104181707A (en) * | 2014-07-30 | 2014-12-03 | 电子科技大学 | Graphene-based polarization insensitive optical modulator |
Non-Patent Citations (4)
| Title |
|---|
| MING LIU等: "A graphene-based broadband optical modulator", 《NATURE》 * |
| MING LIU等: "Double-Layer Graphene Optical Modulator", 《NANO LETTERS》 * |
| XIAO HU等: "A Graphene-based Polarization-Insensitive Optical Modulator", 《OPTICAL SOCIETY OF AMERICA》 * |
| XUETAO GAN等: "Chip-integrated ultrafast graphene photodetector with high responsivity", 《NATURE PHOTONICS》 * |
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| CN105607301B (en) * | 2016-03-11 | 2018-04-13 | 电子科技大学 | It is a kind of that unrelated absorption-type optical modulator is polarized based on graphene |
| CN105607301A (en) * | 2016-03-11 | 2016-05-25 | 电子科技大学 | Absorption modulator based on graphene polarization independence |
| CN105676484A (en) * | 2016-04-13 | 2016-06-15 | 电子科技大学 | Absorption-type optical modulator structure based on ITO material |
| CN105866884A (en) * | 2016-05-27 | 2016-08-17 | 电子科技大学 | Structural design for symmetrical-structure double-ridged graphene waveguide |
| CN106324869B (en) * | 2016-11-16 | 2019-02-15 | 电子科技大学 | Microstrip line traveling wave absorption-type optical modulator based on graphene |
| CN106324869A (en) * | 2016-11-16 | 2017-01-11 | 电子科技大学 | Graphene-based microstrip line travelling wave absorption type optical modulator |
| CN107203053A (en) * | 2017-06-12 | 2017-09-26 | 电子科技大学 | A kind of adjustable light wave-filter based on graphene silicon waveguide |
| CN109298547A (en) * | 2017-07-24 | 2019-02-01 | 中兴光电子技术有限公司 | A kind of Terahertz modulator and modulator approach |
| CN107741656A (en) * | 2017-09-21 | 2018-02-27 | 北京大学 | A kind of electro-optic intensity modulator of the polarization insensitive based on transparent conductive oxide |
| CN108121091A (en) * | 2017-12-08 | 2018-06-05 | 武汉邮电科学研究院 | A kind of electrooptic modulator and preparation method thereof |
| CN108873395A (en) * | 2018-08-10 | 2018-11-23 | 电子科技大学 | A kind of unrelated optical modulator of graphene polarization based on mode conversion |
| CN108873395B (en) * | 2018-08-10 | 2020-07-03 | 电子科技大学 | Mode conversion-based graphene polarization-independent light modulator |
| CN109669282A (en) * | 2019-02-26 | 2019-04-23 | 电子科技大学 | A kind of metal-graphite alkene hybrid integrated electrode |
| CN109870832A (en) * | 2019-04-10 | 2019-06-11 | 电子科技大学 | Graphene H-type narrow slit wave-guide polarizes unrelated electrooptical modulator structure design |
| CN110687695A (en) * | 2019-11-21 | 2020-01-14 | 吉林大学 | Trapezoidal graphene-based polarization-insensitive organic polymer absorption type optical modulator |
| EP4235278A4 (en) * | 2020-11-10 | 2024-04-10 | Huawei Technologies Co., Ltd. | Optical waveguide device and manufacturing method therefor, and electro-optic modulator |
| CN112558329A (en) * | 2020-12-02 | 2021-03-26 | 南京信息工程大学 | Polarized matte electro-optic modulator based on graphene |
| CN112630996A (en) * | 2020-12-22 | 2021-04-09 | 长沙理工大学 | Silicon nitride ridge waveguide-based embedded graphene optical modulator and manufacturing method thereof |
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