CN103969850A - Structural design for novel electrooptical modulator based on graphene - Google Patents
Structural design for novel electrooptical modulator based on graphene Download PDFInfo
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- CN103969850A CN103969850A CN201410192797.XA CN201410192797A CN103969850A CN 103969850 A CN103969850 A CN 103969850A CN 201410192797 A CN201410192797 A CN 201410192797A CN 103969850 A CN103969850 A CN 103969850A
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Abstract
Structural design for a novel electrooptical modulator based on graphene belongs to the photo-communication field and relates to the optical waveguide technology. An optical waveguide of the structural design for the novel electrooptical modulator is mainly made of Si and the graphene, and a Mach-Zehnder interference structure is formed. The graphene is distributed in the middle of the Si waveguide and is of a structure like a sandwich, and layers of graphene are separated from each other by hBN with the thickness of 5nm. The modulation bandwidth and modulation rate of the electrooptical modulator are greatly improved due to the excellent electro-optical character of the graphene, and insertion loss is reduced. Because the device is small in size and stable to operate, the device is easier to industrialize.
Description
Technical field
Novel electro-optic modulator based on Graphene is to belong to optical communication field, relates to optical waveguide technique.
Background technology
Electrooptic modulator has been played the part of a very important role in optical fiber telecommunications system.Be networking because the factor such as sudden of internet causes optical fiber communication from 2 traditional Communication Development, high-performance, the jumbo all-optical network of for example dense wave division multipurpose (DWDM:DenseWavelength Division Multiplexing).The single-channel transmission limit of optical fiber communication is 100Gb/s, but we have seen elbow with respect to the huge transmittability of optical fiber itself with regard to my wife at current terminal signaling processing power, so electrooptic modulator is as the vitals of optical transceiver module, it is very important that its Research Significance just becomes.
High-speed electro-optic modulator is the basis of optoelectronic switch, except being applied to optical fiber communication, also has much other purposes.High-speed phase modulator can, for coherent fiber communication system, be used for producing the comb shape generator of many optical frequencies in the optical fiber telecommunications system of dense wave division multipurpose, or serves as the electro-optic frequency translation device of laser beam.Graphene electrooptic modulator has very outstanding characteristic, can be for optical link and the high-speed a/d converter between optical fiber cable TV (CATV) system, wireless communication system relay station and relay station.In addition, high-speed electro-optic modulator is except the digital fiber system of the High Data Rate for above, can also in Optical Time Division Multiplexing (OTDM) system, produce high repetition frequency, extremely narrow light pulse or optical soliton, in the fraud system of advanced radar, serve as photon bandwidth microwave phase shifter and frequency shifter, in microwave phased-array radar, serve as photonic time delay device, for high speed light wave component analysis instrument, for measuring faint microwave electric field etc.
Graphene (Graphene) is to develop in recent years very swift and violent a kind of New Two Dimensional inorganic nano material.Since it is found, all obtain wide application in fields such as chemistry, electronics, physics, materials.Its outstanding electrical and thermal conductivity performance makes it become a kind of ideal inorganic nano material, and in semiconductor photoelectric device, Graphene also has very vast application prospect.Be compared to traditional semiconductor material, Graphene all has significant advantage aspect a lot.Such as the mobility of the charge carrier in Graphene can reach 15000cm
2/ (Vs), this is equivalent to 1/300 of the light velocity, considerably beyond other semiconductor material.Because Graphene is the structure of monoatomic layer, up to more than 97%, there is superior optical property in the transmitance of visible region.
Electrooptic modulator is a very important device in optical communication field, and electrooptic modulator using Graphene as medium has the not available a lot of advantages of traditional electrical photomodulator.It has improved modulation band-width, the modulation rate of modulator greatly, has less loss, and also comparative maturity of Graphene technology of preparing, and cost of manufacture is cheaper, and reserves are abundant.It has been inevitable that Graphene modulator replaces traditional silicon-based semiconductor electrooptic modulator.
Summary of the invention
The technical problem to be solved in the present invention is exactly how to utilize Graphene to produce the better optical waveguide of modulation effect as medium designs, and improves based on this various performance parameters of respective electrical photomodulator.
What whole modulator adopted is Mach-Zehnder structure.Its composition is shown in accompanying drawing 1,2.The parameter of device has indicated in the drawings, and this device is made up of metal electrode, graphene layer and ridge waveguide.
In Fig. 1, two arms 5 of modulator waveguide are spaced apart 3 μ m, and the width of waveguide is 390nm, is highly 335nm.Metal electrode 1,2,3 lays respectively at the both sides 550nm distant place of waveguide two arms, and graphene layer 4 is connected with electrode 1,2,3 respectively through ridge waveguide.
In Fig. 2, be the silicon dioxide substrate 10 of a 450nm thickness in bottom, be a silicon waveguide high refractive index layer 9 that 90nm is thick above basalis, is that two ends connect the 390nm width of grating coupler and the silicon ridge waveguide 8 of 335nm thickness above it.In order to improve the modulation efficiency of modulator, we have increased a graphene layer 12 in the centre of silicon waveguide.Can see in the drawings, what be positioned at Si waveguide centre is exactly a graphene layer structure that is similar to sandwich structure.Between every two layer graphenes, all separated by hBN (hexagonal boron nitride) material 7 of 5nm thickness, form the structure of a capacitor, hBN is a kind of well electrically insulating material.Unnecessary graphene layer separates by oxide 11 and waveguide.Graphene layer is just in time positioned at the maximum region of silicon Waveguide field distribution, and like this, the absorption efficiency of graphene layer just can maximize, and can improve widely the performance of modulator.
Graphene layer add the RC constant that has greatly reduced silicon waveguide, greatly improved the modulation rate of modulator, also reduced the loss of modulator simultaneously.Because Graphene has extremely excellent electro-optical characteristic, the mobility of the charge carrier in Graphene can reach 15000cm
2/ (Vs), this is equivalent to 1/300 of the light velocity, considerably beyond other semiconductor material, adding itself is the structure of monoatomic layer, in the transmitance of visible region up to more than 97%, can absorb ultraviolet light and the visible ray of 2.3% normal incident, so Graphene modulator has larger modulation band-width with respect to traditional electrooptic modulator.
Mach-Zehnder type electrooptic modulator principle of work based on Graphene: utilized classical M-Z interference structure, by applying different voltage at optical waveguide two arms, changed the refractive index of optical waveguide, and then through a Y branch, signal has been combined into a road output.The luminous power of output can be by the voltage co-controlling of two arms.Than traditional M-Z type electrooptic modulator, grapheme material is more responsive for impressed voltage.Can there is along with the variation of impressed voltage significant variation in the Fermi level of Graphene, this has directly caused the electro-optical characteristic of grapheme material itself to occur greatly to change.
The major parameter analysis of this modulator: through simulation calculation, can obtain the parameters of this modulator, more than wherein modulation band-width can reach 12THz, modulation rate can reach 180Ghz-800Ghz in theory, insertion loss is-1.66dB that extinction ratio is 36.8dB.
Beneficial effect of the present invention:
1, compared with traditional electrooptic modulator, Graphene modulator has excellent electro-optical characteristic, apply the effective refractive index that external voltage can greatly change optical waveguide, modulation band-width and the modulation rate of electrooptic modulator are greatly improved, reduced the insertion loss of modulator, this is preferential select of optical system to integrated development.
2, owing to having adopted grapheme material, because the difference of modulator two arm effective refractive indexs is considerably beyond the modulator of traditional material, the size of greatly having dwindled modulator, and also running is stable, is easier to industrialization.
3, realized high bandwidth, at a high speed, the modulation of large capacity, can apply and light every behave to family etc., at once do something for the occasion.
Using value of the present invention: this electrooptic modulator mainly applies in the optical fiber telecommunications system of high-speed wideband source remote distance also has its unique advantage and operation performance in integrated optical circuit.
Brief description of the drawings
Fig. 1 Mach-Zehnder modulator vertical view
Fig. 2 Mach-Zehnder modulator lightguide cross section structural drawing
Embodiment
Silicon dioxide substrate forms by introduce oxide layer on top layer silicon and substrate, and graphene layer is to be grown on ridge waveguide by the mode of chemogenic deposit, and hexagonal boron nitride is that the process depositing by plasma chemistry forms.The ridge silicon waveguide on upper strata is to assemble by solder technology.
Claims (6)
1. the Mach-Zehnder interfere type electrooptic modulator structural design based on Graphene, comprise graphene layer, separation layer and the electrode of silicon dioxide substrate, silicon waveguide, three layers of intersection, when by electrode in the time that optical waveguide two arms apply different voltage, can there is change in various degree in the Fermi level of Graphene, cause the effective refractive index of optical waveguide that different changes also can occur thereupon, finally interfere modulation second Y bifurcation.
2. the Mach-Zehnder interfere type electrooptic modulator structural design based on Graphene according to claim 1, is characterized in that, described silicon dioxide substrate thickness is 450nm.
3. the Mach-Zehnder interfere type electrooptic modulator structural design based on Graphene according to claim 1, is characterized in that, described silicon waveguide flat layer thickness is 90nm, the wide 390nm of ridge waveguide, and gross thickness is 335nm.
4. according to the Mach-Zehnder interfere type electrooptic modulator structural design based on Graphene described in claim 1,3, it is characterized in that, described graphene layer is positioned at ridge waveguide 70nm eminence, its structure is the capacitor arrangement of three layers of intersection, be connected with electrode respectively, wherein, a middle layer graphene ground connection, every layer graphene thickness is 0.7nm.
5. according to the Mach-Zehnder interfere type electrooptic modulator structural design based on Graphene described in claim 1,3,4, it is characterized in that, described separation layer is between silicon waveguide and every layer graphene layer, and the every layer thickness of separation layer is 5nm.
6. the Mach-Zehnder interfere type electrooptic modulator structural design based on Graphene according to claim 1, is characterized in that, described metal electrode and silicon waveguide spacing are 550nm.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105068278A (en) * | 2015-09-17 | 2015-11-18 | 厦门大学 | Space electrooptical modulator based on graphene |
| CN105759467A (en) * | 2016-05-23 | 2016-07-13 | 电子科技大学 | Intermediate infrared modulator based on black phosphorus chalcogenide glass optical waveguides |
| CN105866884A (en) * | 2016-05-27 | 2016-08-17 | 电子科技大学 | Structural design for symmetrical-structure double-ridged graphene waveguide |
| CN106773145A (en) * | 2016-11-23 | 2017-05-31 | 北京交通大学 | Electro-optical spatial ultrafast modulation device based on Graphene gate layer tiny fiber-optics |
| CN106970475A (en) * | 2016-11-07 | 2017-07-21 | 北京交通大学 | Silicon substrate graphene gate layer electro-optical spatial ultrafast modulation device |
| CN109375389A (en) * | 2018-12-18 | 2019-02-22 | 武汉邮电科学研究院有限公司 | A kind of graphene electro-optical modulator and preparation method thereof |
| CN110109221A (en) * | 2019-04-19 | 2019-08-09 | 宁波大学 | Based on graphene-silicon nitride hybrid integrated optical waveguide three people's voting machine of electric light |
| CN112904471A (en) * | 2019-11-15 | 2021-06-04 | 吉林大学 | Polarizer with graphene film arranged in ridge type optical waveguide core layer structure and preparation method thereof |
| DE202020104362U1 (en) | 2020-07-28 | 2021-10-29 | Gesellschaft für angewandte Mikro- und Optoelektronik mit beschränkter Haftung - AMO GmbH | Electro-optical device, semiconductor device and semiconductor device, electro-optical arrangement and use |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105068278A (en) * | 2015-09-17 | 2015-11-18 | 厦门大学 | Space electrooptical modulator based on graphene |
| CN105759467A (en) * | 2016-05-23 | 2016-07-13 | 电子科技大学 | Intermediate infrared modulator based on black phosphorus chalcogenide glass optical waveguides |
| CN105866884A (en) * | 2016-05-27 | 2016-08-17 | 电子科技大学 | Structural design for symmetrical-structure double-ridged graphene waveguide |
| CN106970475A (en) * | 2016-11-07 | 2017-07-21 | 北京交通大学 | Silicon substrate graphene gate layer electro-optical spatial ultrafast modulation device |
| CN106773145A (en) * | 2016-11-23 | 2017-05-31 | 北京交通大学 | Electro-optical spatial ultrafast modulation device based on Graphene gate layer tiny fiber-optics |
| CN109375389A (en) * | 2018-12-18 | 2019-02-22 | 武汉邮电科学研究院有限公司 | A kind of graphene electro-optical modulator and preparation method thereof |
| CN109375389B (en) * | 2018-12-18 | 2022-04-29 | 武汉邮电科学研究院有限公司 | Graphene electro-optical modulator and preparation method thereof |
| CN110109221A (en) * | 2019-04-19 | 2019-08-09 | 宁波大学 | Based on graphene-silicon nitride hybrid integrated optical waveguide three people's voting machine of electric light |
| CN112904471A (en) * | 2019-11-15 | 2021-06-04 | 吉林大学 | Polarizer with graphene film arranged in ridge type optical waveguide core layer structure and preparation method thereof |
| DE202020104362U1 (en) | 2020-07-28 | 2021-10-29 | Gesellschaft für angewandte Mikro- und Optoelektronik mit beschränkter Haftung - AMO GmbH | Electro-optical device, semiconductor device and semiconductor device, electro-optical arrangement and use |
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Application publication date: 20140806 |
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