CN110187521A - Resonant cavity assists phase transformation reconfigurable optical signal processing chip - Google Patents
Resonant cavity assists phase transformation reconfigurable optical signal processing chip Download PDFInfo
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- CN110187521A CN110187521A CN201910402821.0A CN201910402821A CN110187521A CN 110187521 A CN110187521 A CN 110187521A CN 201910402821 A CN201910402821 A CN 201910402821A CN 110187521 A CN110187521 A CN 110187521A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/009—Thermal properties
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
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Abstract
A kind of resonant cavity auxiliary phase transformation reconfigurable optical signal processing chip, include more vertical busses waveguides and Duo Gen horizontal bus waveguide, a ring resonator is equipped in the infall of every vertical busses waveguide and every horizontal bus waveguide, certain thickness phase-change material layers are deposited on the ring resonator, each ring resonator has different specific resonance wavelength, and the variation of the state of the phase-change material layers is realized by load light pulse or electric pulse.During the self-sustaining characteristic of phase-change material makes device not have quiescent dissipation, energy consumption to only occur in phase-change material state change, the power consumption of device is greatly reduced.The present invention chip have the characteristics that fast response time, it is low in energy consumption and repeatedly it is erasable.
Description
Technical field
The present invention relates to integrated optoelectronics, especially a kind of resonant cavity assists phase transformation reconfigurable optical signal processing chip.
Background technique
Integreted phontonics are the development trends of optical system, are widely used in various optical interconnections and signal processing system.With it is special
Similar with integrated circuit (ASIC), photonic integrated circuits can also be designed to meet specific application, be matched using fixed optical path
Set execution specific function.It is general due to lacking although its performance can be optimized well after more wheels design and manufacture iteration
Property, therefore the solution of the general low cost of various Price Sensitive application can not be become.Therefore, restructural optical path for
The requirement of versatility is very high, i.e., provides different functions by simply resetting several critical components.
Silicon photonics are considered as one of the most promising technology for realizing optical path large-scale integrated.Silicon photonics are due to tool
There is the characteristics of High Density Integration and high volume manufacturing cost, is widely used in the high speed low cost solution party of short distance interconnection
Case.Under normal conditions, silicon substrate integrated device changes the refractive index of silicon materials by thermo-optic effect or carrier dispersion effect,
To realize active adjusting.But they are all volatibility, and need continuous external drive to maintain state.This causes very
Big quiescent dissipation, especially for restructural optical path, as the optical paths such as photoswitch and optical signal processor infrequently change
Using.
A solution of non-volatile refractive index tuning is to integrate phase-change material and silicon.Phase-change material exists
Between amorphous state and crystalline state with very big electrical and optical properties variation, thus can obtain refractive index, resistivity and thoroughly
Penetrate significantly changing for a series of properties such as rate.Further, since it is with self-sustaining characteristic, the refractive index of tuning can protect for a long time
It holds and quiescent dissipation may be not present.The characteristic makes it have a great attraction restructural optical path.Therefore, by phase-change material and traditional silicon
Waveguide combines, and biggish tuning range can be obtained on micron dimension waveguide length, greatly reduces the static function of device
Consumption and hot crosstalk.Phase transformation can be driven by light or electric pulse, transformation time picosecond and nanosecond order, therefore have quickly
Response speed.
In recent years, people are more and more interested in the photonic device of integrated phase-change material.Calculate in nerve, multistage storage,
Many infusive work are done in the fields such as display, optical switch and optical oomputing.For example, the research of Regius professor
(memory-in in optical memory is realized by the method for optical chip on Science Advances within personnel 2019
Computing it) calculates.They are in one layer of GST of SiN waveguide disposed thereon.It is suddenly died using existing between SiN waveguide and GST layers
Wave coupling, light energy are absorbed by GST.GST material is after absorbing certain energy, it may occur that phase transformation becomes part amorphous state.
Changed according to the ratio of light intensity absorption, it can be with encoded information.Shanghai Communications University reports for 2108 on Optics Letter
All-optical, tunable non-volatile phase-change material photoswitch.Make GST that non-volatile phase-change occur by using a series of light pulses.It is logical
Control umber of pulse is crossed to control the crystallization situation of 2 μm of long GST, improves tuning freedom degree.When signal wavelength is resonance wavelength,
The transmission contrast more than 20dB can be obtained.
Summary of the invention
In view of the above-mentioned deficiencies in the prior art, it is an object of the present invention to propose a kind of resonant cavity in conjunction with the advantages of phase-change material
Assist phase transformation reconfigurable optical signal processing chip, which has the characteristics that fast response time, low in energy consumption and multiple erasable.
In order to achieve the above objectives, technical solution of the invention is as follows:
A kind of resonant cavity auxiliary phase transformation reconfigurable optical signal processing chip, it is characterized in that the chip includes more vertical total
Line waveguide and Duo Gen horizontal bus waveguide are equipped with one in the infall of every vertical busses waveguide and every horizontal bus waveguide
A ring resonator, each ring resonator have different specific resonance wavelength, deposit one on the ring resonator
Determine the phase-change material layers of thickness, the phase-change material layers have the mechanism of switching state, and the phase-change material layers have two
A stable changeable state (A state, B state), when phase-change material layers are in B state, the resonant cavity does not change the biography of light
Defeated direction, when phase-change material layers are in A state, then the resonant cavity will change the transmission direction of light, i.e., is become by vertical direction
Become vertical direction for horizontal direction or from horizontal direction.
The state switching mechanism of the phase-change material layers, the embodiment party of embodiment and electric pulse including light pulse
Formula, the light pulse include free space irradiating pulsed light, external waveguide injected pulse light or by waveguide coupled pulse light；
The embodiment of the electric pulse includes sandwich electrode structure or thermal resistance structure.
The sandwich structure is by the top electrode contacted with phase-change material layers and the lower electrode contacted with phase-change material layers
And the phase-change material layers three parts of folder between electrodes are constituted, the top electrode and lower electrode are transparent in communication band
Material.
The phase-change material layers are by Ge2Sb2Te5、Ge2Sb2Se4Te1Or similar chalcogenide compound is constituted.
The material of the bus waveguide and ring resonator is: silicon, silicon nitride, gallium nitride, GaAs, indium phosphide or carbon
SiClx.
The ring resonator is micro-ring resonant cavity, racetrack micro-ring resonant cavity or micro- disk resonant cavity.
The ring resonator can correspond to identical or different resonance wave according to the demand of practical restructural optical path
Long, the resonance wavelength of each toroidal cavity resonator is Independent adjustable.
The thermal resistance structure is the resistance heater contacted with the phase-change material layers, which can position
In may be alternatively located under phase-change material on phase-change material, the material of the resistance heater is transparent oxidation at communication band
Indium tin (ITO) or doped silicon.The chip can be used for wavelength-division multiplex, demultiplexing, comb filtering etc..
The resonance wavelength of each toroidal cavity resonator is Independent adjustable.The transmission of each resonant cavity and absorption spectra can lead to
The state of transformation phase-change material is crossed to change.
When phase-change material is in a certain state, the light of horizontal bus waveguide can be coupled to vertical busses waveguide；When
When phase-change material is in another state, the light of horizontal bus waveguide cannot be coupled to vertical busses waveguide, and light is still along level
Bus waveguide transmission.
The resonant cavity auxiliary phase transformation reconfigurable optical signal processing chip is controlled by changing the state of phase-change material
The direction of output light processed, thus realize the optical signal prosessing for meeting different demands, such as: wavelength-division multiplex, demultiplexing, comb filtering
Deng.
The present invention has the advantages that
The present invention combines silicon waveguide with phase-change material, has both played phase-change material read or write speed fast (ns magnitude), circulation
Number height (> 1012), it is low in energy consumption the features such as except, and it is special to play silicon materials, compact dimensions compatible with existing CMOS technology etc.
Point.The technology of the present invention realizes difficulty and industry, and cost is relatively low.Degree of transformation by controlling phase-change material can also be achieved multistage tune
Control.
Detailed description of the invention
Fig. 1 is the schematic diagram that the present invention kind resonant cavity assists phase transformation reconfigurable optical signal processing chip embodiment 1, wherein humorous
Vibration chamber is micro-ring resonant cavity.
Fig. 2 is the work that resonant cavity of the present invention assists 2 resonator unit of phase transformation reconfigurable optical signal processing chip embodiment
Schematic diagram, wherein resonant cavity is micro-ring resonant cavity.
Fig. 3 is the resonator unit that resonant cavity of the present invention assists phase transformation reconfigurable optical signal processing chip embodiment 3, is utilized
The pulsed light for being coupled into resonance cavity waveguide makes the working principle diagram of phase-change material phase transformation.
Fig. 4 is the resonator unit that resonant cavity of the present invention assists phase transformation reconfigurable optical signal processing chip embodiment 4, is utilized
The pulsed light of external waveguide injection makes the working principle diagram of phase-change material phase transformation.
Fig. 5 is the resonator unit that resonant cavity of the present invention assists phase transformation reconfigurable optical signal processing chip embodiment 5, is utilized
Sandwich electrode structure makes the working principle diagram of phase-change material phase transformation.
Fig. 6 is the resonator unit that resonant cavity of the present invention assists phase transformation reconfigurable optical signal processing chip embodiment 6, is utilized
Thermal resistance structure makes the working principle diagram of phase-change material phase transformation.
Fig. 7 is that resonant cavity of the present invention assists phase transformation reconfigurable optical signal processing chip embodiment 7 for realizing parallel single mode
The schematic diagram of transfer function.
Fig. 8 is that resonant cavity of the present invention assists phase transformation reconfigurable optical signal processing chip embodiment 8 for realizing wavelength-division multiplex
The schematic diagram of function.
Fig. 9 is that resonant cavity of the present invention assists phase transformation reconfigurable optical signal processing chip embodiment 9 to demultiplex for realizing wavelength-division
With the schematic diagram of function.
Figure 10 is that resonant cavity of the present invention assists phase transformation reconfigurable optical signal processing chip embodiment 10 for realizing pectination filter
The schematic diagram of wave energy.
Specific embodiment
The present invention is further elaborated with reference to the accompanying drawings and examples, but protection model of the invention should not be limited with this
It encloses.
First referring to Fig. 1, Fig. 1 is that the present invention kind resonant cavity assists phase transformation reconfigurable optical signal processing chip embodiment 1
Schematic diagram, as seen from the figure, resonant cavity of the present invention assist phase transformation reconfigurable optical signal processing chip, include 2 vertical busses waveguides
2 and four horizontal bus waveguides 1, the infall of every vertical busses waveguide 2 and every horizontal bus waveguide 1 is equipped with a ring
Shape resonant cavity 3, each ring resonator 3 have different specific resonance wavelength, deposit one on the ring resonator 3
Determine the phase-change material layers 4 of thickness, the phase-change material layers 4 have the mechanism of switching state, which has two
A stable changeable state (A state, B state), when phase-change material layers 4 are in B state, the ring resonator 3 does not change
The transmission direction of light, when phase-change material layers 4 are in A state, then the ring resonator 3 will change the transmission direction of light, and
Horizontal direction is become from vertical direction or vertical direction is become from horizontal direction.
Embodiment 2
As shown in Fig. 2, Fig. 2 is that resonant cavity of the present invention assists 2 resonant cavity of phase transformation reconfigurable optical signal processing chip embodiment
The working principle diagram of unit, wherein resonant cavity 3 is micro-ring resonant cavity.Certain thickness phase transformation material is deposited on micro-ring resonant cavity 3
The bed of material 4, when phase-change material layers 4 are in state A, the low-loss state of corresponding phase-change material, the light inputted at this time by port 10
It is coupled into micro-ring resonant cavity 3, and in the intracavitary formation resonance of micro-ring resonant, is finally exported in port 12, it, can be with by optimization design
Resonant cavity is set to work in Critical Coupling state, input light is all exported from port 12 at this time, and port 11 does not have light output.Work as phase
The state for becoming material is flipped, such as changes to state B from state A phase, the corresponding high loss shape of the phase-change material in state B
The resonance of state, micro-ring resonant cavity 3 is destroyed, therefore the light inputted from port 10 is finally exported from port 11.
Multiple resonant element structures shown in Fig. 2 are combined, resonant cavity of the present invention is constituted and assists phase transformation reconfigurable optical
Signal processing chip, using the working principle of resonant element described in Fig. 2, by light pulse or electric pulse come separately adjustable each
The phase of phase-change material 4 changes the coupling condition of optical resonator and bus waveguide, and then changes the transmission path of signal light,
Realize restructural optical path.
Since key of the invention is how to realize the phase transformation of phase-change material, for embodiment and its schematic diagram
It is bright.
Embodiment 3
Fig. 3 is the resonator unit that resonant cavity of the present invention assists phase transformation reconfigurable optical signal processing chip embodiment 3, is utilized
The pulsed light for being coupled into resonance cavity waveguide makes the working principle diagram of phase-change material phase transformation.
A branch of phase conversion pulse light 6 inputted by port 11 is coupled into ring resonator 3, utilizes phase-change material 4 and annular
Evanescent wave coupling between resonance cavity waveguide 3, the energy of a part of pulsed light is absorbed by phase-change material 4, so that phase-change material 4
Temperature increase.When temperature lower than phase-change material fusion temperature but be higher than phase-change material crystallization temperature when, phase-change material 4 just by
State A is converted to state B；After temperature is higher than the fusion temperature of material and rapid cooling, phase-change material is just changed by state B
To state A, to realize the overturning of state.
Embodiment 4
Fig. 4 is the resonator unit that resonant cavity of the present invention assists phase transformation reconfigurable optical signal processing chip embodiment 4, is utilized
The pulsed light of external waveguide injection makes the working principle diagram of phase-change material phase transformation.With method shown in Fig. 3 the difference lies in that its phase
The pulsed light 6 for becoming used is introduced from external structure 7, and 7 can be external waveguide structure or free space focusing system.Work as pulsed light
6 energy lower than phase-change material fusing needed for heat, but be higher than phase-change material crystallization needed for heat when, phase-change material just by
State A is converted to state B；When the heat needed for the energy of pulsed light is higher than material fusing, phase-change material is just changed by state B
To state A, to realize the overturning of state.
Embodiment 5
Fig. 5 is the schematic diagram for making phase-change material phase transformation using electric pulse, and wherein electrode structure is sandwich structure.Electrode by
Lower electrode 9, the phase-change material 4,10 three parts of the top electrode composition contacted with phase-change material 4 contacted with phase-change material 4.Under wherein
Electrode 9 is doped silicon waveguide, and top electrode 10 is tin indium oxide.Electrical signal path is 9-4-11, when one weak and wide electricity of application
Signal, phase-change material 4 are heated to crystallization temperature, and phase-change material 4 is converted to state B by state A；It is one strong and narrow when applying
Electric signal, phase-change material 4 are heated to fusion temperature and fast-refrigerating, and phase-change material 4 is then converted to state A by state B, from
And realize the overturning of state.
Embodiment 6
Fig. 6 is the resonator unit that resonant cavity of the present invention assists phase transformation reconfigurable optical signal processing chip embodiment 6, is utilized
Thermal resistance structure makes the working principle diagram of phase-change material phase transformation.Its electrode structure is the thermal resistance 8 contacted with phase-change material 4, should
Thermal resistance 8 makes 4 phase transformation of phase-change material as resistance heater.Resistance heater 8 shown in figure is doped silicon waveguide and is located at
Under phase-change material 4.The materials transparent at communication band such as resistance heater 8 or tin indium oxide, position both can be with
It can also be under phase-change material on phase-change material.Electric signal is added using the Joule heat generated when flowing through resistance heater 8
Hot phase-change material 4 makes its phase transformation.Similar with Fig. 5 electric pulse, when applying a weak and wide electric signal, phase-change material is heated to
Crystallization temperature, phase-change material are converted to state B by state A；When applying a strong and narrow electric signal, phase-change material is heated to
Fusion temperature and fast-refrigerating, phase-change material are then converted to state A by state B, to realize the overturning of state.
As shown in Fig. 2 resonant element structure, the direction of output light can be changed by changing phase-change material state.It is multiple
Resonant element constitutes a chip system as shown in Figure 1, and four kinds of different optical signal prosessings may be implemented using same system
Function.It should be noted that resonant element number should not be limited only to number shown in figure in system here, the function of being realized
It should not be limited only to four kinds of act set forth below:.
Embodiment 7
Fig. 7 is the schematic diagram that parallel single mode transport function is realized using structure shown in FIG. 1, wherein 111,112,113,
114 be four input ports, and 101,102,103,104 be four output ports.Resonance structure is micro-ring resonant cavity 3, phase transformation material
The state of material 4 is completely in state B, i.e., still transmits in the horizontal direction from the light that horizontal bus waveguide 1 inputs.For example, we
In the light that 111,112,113,114 4 port difference input wavelengths are λ 1, λ 2, λ 3, λ 4, the light of this four wavelength is not respectively along
Same horizontal bus waveguide transmission, and it is final respectively in 101,102,103,104 4 ports outputs.
Embodiment 8
Fig. 8 is the schematic diagram that wavelength-division multiplex function is realized using structure shown in FIG. 1, wherein 111,112,113,114
It is output port for four input ports, 105.Resonant cavity is micro-ring resonant cavity 3, and the state of phase-change material 4 is completely in state
A, i.e., the light inputted from horizontal bus waveguide 1 are finally exported along 2 direction of vertical busses waveguide.For example, we are 111,112,
113,114 4 port difference input wavelengths are the light of λ 1, λ 2, λ 3, λ 4, and the light of this four wavelength is both coupled to vertical busses
Waveguide 2, and finally exported in 105 ports.
Embodiment 9
Fig. 9 is the schematic diagram that demultiplexing function is realized using structure shown in FIG. 1, wherein 115 be input port, 101,
102,103,104 be four output ports.Resonance structure is micro-ring resonant cavity 3, and the state for the phase-change material 4 that the left side one arranges is whole
In state A, the state for the phase-change material 4 that the right one arranges is completely in state B (according to embodiment 3-6 the method, to each
The state of phase-change material on ring resonator is realized after individually controlling).The light inputted from port 115 is arranged by the left side one
When micro-ring resonant cavity 3, the micro-ring resonant cavity that input light can first be coupled to corresponding wavelength is coupled to horizontal bus waveguide again, and
It is transmitted along horizontal bus wave guide direction, and when this part light process one column micro-ring resonant cavity 3 of the right, it is humorous micro-loop will not to be coupled to
Shake chamber, so light is still along horizontal bus waveguide transmission.For example, we include wavelength X 1, λ 2, λ 3, λ 4 in the input of 155 ports
Light, the light of this four wavelength is first coupled to the micro-ring resonator 3 of corresponding wavelength, further along respectively neighbouring horizontal bus wave
Transmission is led, and final respectively in 101,102,103,104 4 ports outputs.
Embodiment 10
Figure 10 is the schematic diagram that comb filtering function is realized using structure shown in FIG. 1, wherein 115 be input port,
106 be output port.Resonance structure is micro-ring resonant cavity 3, and the resonance wavelength of four micro-ring resonant cavities 3 is respectively λ from top to bottom
1, λ 2, λ 3, λ 4, the state of phase-change material 4 are completely in state A, i.e., can be along horizontal bus from the light that vertical busses waveguide 2 inputs
Wave guide direction output, the light inputted from horizontal bus waveguide 1 can be exported along vertical busses wave guide direction.For example, we are at 155 ends
Mouthful one wide spectrum optical of input, only meeting the light of condition of resonance, (generated optical path difference is wavelength when transmitting one week around micro-loop
Integral multiple) can just be coupled to micro-ring resonant cavity 3 and along another direction export.Therefore wavelength is that the light of λ 1 successively passes through
Topmost two micro-ring resonant cavities 3 and finally 106 ports export；Wavelength is that the light of λ 2 successively passes through two micro-loops of the second row
Resonant cavity 3 is simultaneously finally exported in 106 ports.And so on, the light that wavelength is λ 3 and λ 4 is also exported in port 106, and port 106 is most
Eventually there is only λ 1, λ 2,4 four wavelength of λ 3 and λ light, realize comb filtering function.
Experiment shows that the present invention combines silicon waveguide with phase-change material, i.e. fast (the ns amount of performance phase-change material read or write speed
Grade), cycle-index height (> 1012), it is low in energy consumption the features such as except, and play that silicon materials are compatible with existing CMOS technology, size is tight
The features such as gathering.The technology of the present invention realizes difficulty and industry, and cost is relatively low.Degree of transformation by controlling phase-change material can also be achieved
Multi-regulation.
The above, the only specific embodiment and embodiment in the present invention, but protection scope of the present invention not office
It is limited to this, within the technical scope disclosed by the invention, what can be readily occurred in transforms or replaces any people for being familiar with the technology, all
It should cover within the scope of the present invention.Therefore, protection scope of the present invention should be with the protection scope of claims
Subject to.
Claims (8)
1. a kind of resonant cavity assists phase transformation reconfigurable optical signal processing chip, it is characterised in that the chip includes more vertical busses
Waveguide (2) He Duogen horizontal bus waveguide (1), in the intersection of every vertical busses waveguide (2) and every horizontal bus waveguide (1)
Place is equipped with a ring resonator (3), and each ring resonator (3) has different specific resonance wavelength, described
It is deposited on ring resonator (3) certain thickness phase-change material layers (4), the phase-change material layers (4) have state switching machine
Structure.
2. resonant cavity according to claim 1 assists phase transformation reconfigurable optical signal processing chip, it is characterised in that described
The state switching mechanism of phase-change material layers (4), including optical pulse regime and electric pulse mode, the light pulse include freely empty
Between irradiate pulsed light, external waveguide injection pulsed light or by waveguide couple pulsed light；The implementation of the electric pulse
Mode includes sandwich electrode structure or thermal resistance structure.
3. resonant cavity according to claim 2 assists phase transformation reconfigurable optical signal processing chip, it is characterised in that described
Sandwich structure by the top electrode (10) contacted with phase-change material layers (4) and the lower electrode (9) contacted with phase-change material layers (4) with
And phase-change material layers (4) three parts of folder between electrodes are constituted, the top electrode (10) and lower electrode (9) they are to communicate
The transparent material of wave band.
4. resonant cavity according to claim 1 assists phase transformation reconfigurable optical signal processing chip, it is characterised in that described
Phase-change material layers (4) are by Ge2Sb2Te5Or Ge2Sb2Se4Te1It constitutes.
5. resonant cavity according to claim 1 assists phase transformation reconfigurable optical signal processing chip, it is characterised in that described
The material of bus waveguide and ring resonator is silicon, silicon nitride, gallium nitride, GaAs, indium phosphide or silicon carbide.
6. resonant cavity according to claim 1 assists phase transformation reconfigurable optical signal processing chip, it is characterised in that described
Ring resonator (3) is micro-ring resonant cavity, racetrack micro-ring resonant cavity or micro- disk resonant cavity.
7. resonant cavity according to claim 1 assists phase transformation reconfigurable optical signal processing chip, it is characterised in that described
Ring resonator (3), according to the demand of restructural optical path, corresponding identical or different resonance wavelength, each toroidal cavity resonator
Resonance wavelength is all Independent adjustable.
8. resonant cavity according to any one of claims 1 to 7 assists phase transformation reconfigurable optical signal processing chip, feature exists
It is the resistance heater (8) contacted with the phase-change material layers (4) in the thermal resistance structure, which can position
In may be alternatively located under phase-change material on phase-change material, the material of resistance heater indium oxide transparent at communication band
Tin (ITO) or doped silicon.
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| CN114371532A (en) * | 2021-08-16 | 2022-04-19 | 北京工业大学 | Branched waveguide interactive regulation and control ultrafast all-optical switch based on phase change material |
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| CN114815074A (en) * | 2022-06-30 | 2022-07-29 | 中山大学 | Optical modulation micro-ring resonant cavity and preparation method thereof |
| CN115657209A (en) * | 2022-12-12 | 2023-01-31 | 之江实验室 | 1x2 micro-ring optical switch based on antimony sulfide on silicon |
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