CN114721089A - Phased array radar system based on phase change material photoswitch - Google Patents

Phased array radar system based on phase change material photoswitch Download PDF

Info

Publication number
CN114721089A
CN114721089A CN202210637947.8A CN202210637947A CN114721089A CN 114721089 A CN114721089 A CN 114721089A CN 202210637947 A CN202210637947 A CN 202210637947A CN 114721089 A CN114721089 A CN 114721089A
Authority
CN
China
Prior art keywords
waveguide
layer
gst layer
gst
interference region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210637947.8A
Other languages
Chinese (zh)
Inventor
闫培光
商镇远
陈浩
朱刚毅
杨俊波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen University
Original Assignee
Shenzhen University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen University filed Critical Shenzhen University
Priority to CN202210637947.8A priority Critical patent/CN114721089A/en
Publication of CN114721089A publication Critical patent/CN114721089A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4817—Constructional features, e.g. arrangements of optical elements relating to scanning
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0126—Opto-optical modulation, i.e. control of one light beam by another light beam, not otherwise provided for in this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention discloses a phased array radar system based on a phase change material optical switch, which relates to the technical field of microwave photonics and comprises a silicon substrate, a silicon dioxide buried oxide layer and a silicon nitride layer; the silicon nitride layer comprises a first waveguide, a second waveguide, a third waveguide, a fourth waveguide, a fifth waveguide, a sixth waveguide, a seventh waveguide, an eighth waveguide, a ninth waveguide, a tenth waveguide, an eleventh waveguide, a twelfth waveguide, a thirteenth waveguide, a fourteenth waveguide and a fifteenth waveguide; the silicon nitride layer further includes: the multimode interference device comprises a first multimode interference region, a second multimode interference region, a third multimode interference region, a fourth multimode interference region, a fifth multimode interference region, a sixth multimode interference region and a seventh multimode interference region. When the GST layer is heated by the short laser pulse and is converted from the amorphous state to the crystalline state, the specific waveguide cannot transmit light, the position of the overall emergent light of the chip can be changed, and the spatial scanning of the output light beam can be realized by regularly controlling the GST optical switch of the specific waveguide.

Description

Phased array radar system based on phase change material photoswitch
Technical Field
The invention relates to the technical field of microwave photonics, in particular to a phased array radar system based on a phase-change material optical switch.
Background
In recent years, optical phased arrays have attracted considerable attention as an alternative to conventional mechanical scanning and MEMS beam steering techniques. It has no inertia, and can still realize random pointing with high directional gain under high-speed scanning. The optical phased array utilizes various micro-structure waveguides to control light beams, and emitted light interferes in a far field to form an interference pattern with specific directional gain by adjusting the phase relation among transmitting array elements. In an optical phased array system, an optical phase shifter can control the shape and direction of a wavefront by controlling the phase of light passing through a waveguide, thereby realizing beam deflection.
In the existing phased array beam regulation and control technology, a thermo-optic phase shifter is generally prepared on a waveguide, and the phase of an optical antenna is regulated and controlled by using a thermo-optic effect; or a wavelength-tunable light source scheme is adopted, so as to control the light beam steering. But the wavelength tunable laser has a large size and is not easy to realize chip-level integration; the method for regulating and controlling the phase of the optical antenna by utilizing thermal regulation needs to rely on an external control circuit, has high process requirement, high phase regulation energy consumption, complex control circuit and generally smaller light beam scanning range.
Accordingly, the present invention is directed to a phased array radar system based on phase change material optical switches to solve the above-mentioned problems.
Disclosure of Invention
The invention aims to provide a phased array radar system based on a phase change material photoswitch, which aims to solve the problem of a phase modulation mode of a phased array (taking a one-dimensional phased array as an example) in the prior art.
The technical purpose of the invention is realized by the following technical scheme: a phased array radar system based on a phase change material optical switch comprises three-layer structure components and a miniature short pulse laser positioned above the three-layer structure components, wherein the three-layer structure components comprise a silicon substrate, a silicon dioxide buried oxide layer and a silicon nitride layer which are sequentially arranged from bottom to top;
the silicon nitride layer includes: the waveguide comprises a first waveguide, a second waveguide, a third waveguide, a fourth waveguide, a fifth waveguide, a sixth waveguide, a seventh waveguide, an eighth waveguide, a ninth waveguide, a tenth waveguide, an eleventh waveguide, a twelfth waveguide, a thirteenth waveguide, a fourteenth waveguide and a fifteenth waveguide which are arranged in sequence;
the silicon nitride layer further includes: a first multimode interference region, a second multimode interference region, a third multimode interference region, a fourth multimode interference region, a fifth multimode interference region, a sixth multimode interference region and a seventh multimode interference region, the first waveguide being connected to a second waveguide and a third waveguide by a first multimode interference region, the second waveguide being connected to a fourth waveguide and a fifth waveguide by a second multimode interference region, the third waveguide is connected to a sixth waveguide and a seventh waveguide through a third multimode interference region, the fourth waveguide is connected to an eighth waveguide and a ninth waveguide through a fourth multimode interference region, the fifth waveguide is connected to the tenth waveguide and the eleventh waveguide through a fifth multimode interference region, the sixth waveguide is connected to the twelfth waveguide and the thirteenth waveguide through a sixth multimode interference region, the seventh waveguide is connected to the fourteenth waveguide and the fifteenth waveguide through a seventh multimode interference region;
and a first GST layer, a second GST layer, a third GST layer, a fourth GST layer, a fifth GST layer, a sixth GST layer, a seventh GST layer and an eighth GST layer are respectively deposited on the upper surfaces of the eighth waveguide, the ninth waveguide, the tenth waveguide, the eleventh waveguide, the twelfth waveguide, the thirteenth waveguide, the fourteenth waveguide and the fifteenth waveguide.
Further, the first waveguide, the second waveguide, the third waveguide, the fourth waveguide, the fifth waveguide, the sixth waveguide, the seventh waveguide, the eighth waveguide, the ninth waveguide, the tenth waveguide, the eleventh waveguide, the twelfth waveguide, the thirteenth waveguide, the fourteenth waveguide and the fifteenth waveguide have a width of 1-2 μm.
Further, the first GST layer, the second GST layer, the third GST layer, the fourth GST layer, the fifth GST layer, the sixth GST layer, the seventh GST layer and the eighth GST layer are deposited in an evaporation mode, and the thicknesses of the first GST layer, the second GST layer, the third GST layer, the fourth GST layer, the fifth GST layer, the sixth GST layer, the seventh GST layer and the eighth GST layer are 50-800 nm.
Further, the micro short pulse laser is precisely positioned to the first GST layer, the second GST layer, the third GST layer, the fourth GST layer, the fifth GST layer, the sixth GST layer, the seventh GST layer, and the eighth GST layer by emitting a short pulse laser beam.
Further, the height of the silicon substrate is greater than that of the silicon dioxide oxygen burying layer, and the height of the silicon dioxide oxygen burying layer is greater than that of the silicon nitride layer.
Further, the height ranges of the first waveguide, the second waveguide, the third waveguide, the fourth waveguide, the fifth waveguide, the sixth waveguide, the seventh waveguide, the eighth waveguide, the ninth waveguide, the tenth waveguide, the eleventh waveguide, the twelfth waveguide, the thirteenth waveguide, the fourteenth waveguide, the fifteenth waveguide, the first multimode interference region, the second multimode interference region, the third multimode interference region, the fourth multimode interference region, the fifth multimode interference region, the sixth multimode interference region, the seventh multimode interference region, the first GST layer, the second GST layer, the third GST layer, the fourth GST layer, the fifth GST layer, the sixth GST layer, the seventh GST layer and the eighth GST layer are 0.3-1.5 μm.
Further, the height of the silicon substrate is 300-600 μm.
Further, the height of the silicon dioxide oxygen burying layer is 2-3 μm.
In the invention, the system inputs light into the first waveguide, the light is split by the multi-level multi-mode interference region, and finally the light is emitted to the free space by the eighth waveguide, the ninth waveguide, the tenth waveguide, the eleventh waveguide, the twelfth waveguide, the thirteenth waveguide, the fourteenth waveguide and the fifteenth waveguide. In the present invention, the GST material is deposited on the eighth, ninth, tenth, eleventh, twelfth, thirteenth, fourteenth, and fifteenth waveguides, that is, the first, second, third, fourth, fifth, sixth, seventh, and eighth GST layers by evaporation. Compared with other phase change materials, the GST series alloy is the most mature phase change material, and has the advantages of high crystallization rate, large resistance and refractive index change of amorphous and crystalline states, good reversibility between the amorphous and crystalline states and the like. Moreover, the crystallization temperature of the GST material is about 168 ℃, and the crystallization time can reach nanosecond level, so that the GST material is suitable for the application of an ultrafast optical switch. Because the difference between the crystalline state and the amorphous state refractive index of the GST material is 1.4, when the GST layer is heated from the amorphous state to the crystalline state through the short pulse laser, the total reflection condition of the waveguide can be changed due to the change of the refractive index of the GST layer, so that the specific waveguide cannot pass light, the position of the whole emergent light of the chip is changed, and the spatial scanning of the output light beam can be realized by regularly controlling the switch of the specific waveguide.
In the present invention, if a single short laser pulse heats the GST layer to near the melting point, it rapidly cools and becomes amorphous thereafter; if a series of short pulses are applied to the micro short pulse laser, the micro short pulse laser is slower in cooling speed and is stabilized to be in a crystalline state, so that regular beam steering can be realized by controlling the pulse type emitted by the micro short pulse laser and the waveguide position where laser is incident, namely the system can realize a beam scanning system with higher speed, higher efficiency and higher stability.
In conclusion, the invention has the following beneficial effects:
1. according to the system, light is input into a first waveguide, split is carried out through a multi-level multi-mode interference region, and finally the light is emitted to a free space through an eighth waveguide, a ninth waveguide, a tenth waveguide, an eleventh waveguide, a twelfth waveguide, a thirteenth waveguide, a fourteenth waveguide and a fifteenth waveguide, and due to the fact that the refractive index difference between GST crystalline state and amorphous state is 1.4, when a GST layer in the invention is heated through short laser pulse and converted from an amorphous state to a crystalline state, the total reflection condition of the waveguide can be changed through the change of the refractive index of the GST layer, so that a specific waveguide cannot be light-conducted, and the position of integral emergent light of a chip can be changed, therefore, the spatial scanning of an output light beam can be realized through regularly controlling a GST optical switch of a specific waveguide;
2. the system of the invention can realize a light beam scanning system with high speed, high efficiency and strong stability.
Drawings
Fig. 1 is a schematic perspective view of a phased array radar system based on a phase change material optical switch according to an embodiment of the present invention.
In the figure: 31. a silicon substrate; 32. a silicon dioxide buried oxide layer; 33. a miniature short pulse laser; 1. a first waveguide; 2. a first multimode interference region; 3. a second waveguide; 4. a third waveguide; 5. a second multimode interference region; 6. a third multimode interference region; 7. a fourth waveguide; 8. a fifth waveguide; 9. a sixth waveguide; 10. a seventh waveguide; 11. a fourth multimode interference region; 12. a fifth multimode interference region; 13. a sixth multimode interference region; 14. a seventh multimode interference region; 15. an eighth waveguide; 16. a ninth waveguide; 17. a tenth waveguide; 18. an eleventh waveguide; 19. a twelfth waveguide; 20. a thirteenth waveguide; 21. a fourteenth waveguide; 22. a fifteenth waveguide; 23. a first GST layer; 24. a second GST layer; 25. a third GST layer; 26. a fourth GST layer; 27. a fifth GST layer; 28. a sixth GST layer; 29. a seventh GST layer; 30. and an eighth GST layer.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions of the present invention will be described in further detail below with reference to the embodiments of the present invention and the accompanying drawings. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail with reference to examples.
Example (b):
as shown in fig. 1, a phase-basedThe phased array radar system of the variable material optical switch comprises a miniature short pulse laser 33 and three-layer structure components which are n from bottom to top in sequence3Layer n2Layer n1A layer of which n3The layer being a silicon substrate 31, n2The layer is a silicon dioxide buried oxide layer 32, n1The layer is a silicon nitride layer, the height of the silicon substrate 31 is greater than that of the silicon dioxide buried oxide layer 32, and the height of the silicon dioxide buried oxide layer 32 is greater than that of the silicon nitride layer.
The structure of the silicon nitride layer mainly comprises silicon nitride waveguides (comprising a first waveguide 1, a second waveguide 3, a third waveguide 4, a fourth waveguide 7, a fifth waveguide 8, a sixth waveguide 9, a seventh waveguide 10, an eighth waveguide 15, a ninth waveguide 16, a tenth waveguide 17, an eleventh waveguide 18, a twelfth waveguide 19, a thirteenth waveguide 20, a fourteenth waveguide 21 and a fifteenth waveguide 22), multi-mode interference regions (comprising a first multi-mode interference region 2, a second multi-mode interference region 5, a third multi-mode interference region 6, a fourth multi-mode interference region 11, a fifth multi-mode interference region 12, a sixth multi-mode interference region 13 and a seventh multi-mode interference region 14). Wherein, the concrete position relation among each part in the silicon nitride layer is:
the first waveguide 1 is connected to the second waveguide 3 and the third waveguide 4 by a first multimode interference region 2, the second waveguide 3 is connected to the fourth waveguide 7 and the fifth waveguide 8 by a second multimode interference region 5, the third waveguide 4 is connected to the sixth waveguide 9 and the seventh waveguide 10 by a third multimode interference region 6, the fourth waveguide 7 is connected to the eighth waveguide 15 and the ninth waveguide 16 by a fourth multimode interference region 11, the fifth waveguide 8 is connected to the tenth waveguide 17 and the eleventh waveguide 18 by a fifth multimode interference region 12, the sixth waveguide 9 is connected to the twelfth waveguide 19 and the thirteenth waveguide 20 by a sixth multimode interference region 13, and the seventh waveguide 10 is connected to the fourteenth waveguide 21 and the fifteenth waveguide 22 by a seventh multimode interference region 14.
GST layers (a first GST layer 23, a second GST layer 24, a third GST layer 25, a fourth GST layer 26, a fifth GST layer 27, a sixth GST layer 28, a seventh GST layer 29, and an eighth GST layer 30, respectively) are deposited on the upper surfaces of the eighth waveguide 15, the ninth waveguide 16, the tenth waveguide 17, the eleventh waveguide 18, the twelfth waveguide 19, the thirteenth waveguide 20, the fourteenth waveguide 21, and the fifteenth waveguide 22 by evaporation.
In this embodiment, the light source used in the phased array radar system of the present invention is a narrow-line-width tunable laser with a set output center wavelength, which may be visible light (mainly 500 nm), near infrared light (mainly 1550 nm), or mid-infrared light (mainly 2800 nm).
The working principle is as follows: the system of the present invention splits light by inputting light into the first waveguide 1, passing through a multi-stage multi-mode interference region, and finally emits the light to a free space by passing through the eighth waveguide 15, the ninth waveguide 16, the tenth waveguide 17, the eleventh waveguide 18, the twelfth waveguide 19, the thirteenth waveguide 20, the fourteenth waveguide 21, and the fifteenth waveguide 22. GST materials are deposited on the upper surfaces of the eighth, ninth, tenth, eleventh, twelfth, thirteenth, fourteenth, and fifteenth waveguides 15, 16, 17, 18, 19, 20, 21, 22, that is, the first, second, third, fourth, fifth, sixth, seventh, and eighth GST layers 23, 24, 25, 26, 27, 28, 29, and 30, by evaporation. Compared with other phase change materials, the GST series alloy is the most mature phase change material, and has the advantages of high crystallization rate, large resistance and refractive index change of amorphous and crystalline states, good reversibility between the amorphous and crystalline states and the like. The crystallization temperature of the GST material is about 168 ℃, the crystallization time can reach nanosecond level, and the GST material is suitable for being applied to an ultrafast optical switch. Because the difference between the crystalline state and the amorphous state refractive index of the GST material is 1.4, when the GST layer is heated and converted from the amorphous state to the crystalline state through the short laser pulse of the micro short pulse laser 33, the total reflection condition of the waveguide can be broken through due to the change of the refractive index of the GST layer, so that the specific waveguide cannot pass light, the position of the whole emergent light of the chip is changed, and the space scanning function of the output light beam can be realized by regularly controlling the switch of the specific waveguide.
In the above embodiments of the present invention, compared to the existing phased array beam adjusting and controlling technology in which the thermally tuned phase shifter is fabricated on the waveguide, the system of the present invention utilizes the thermo-optic effect to adjust and control the phase of the optical antenna, and does not need to rely on an external control circuit, thereby further reducing the size; compared with the scheme of adopting the wavelength-adjustable light source, the invention can use a single light source for adjustment, thereby being optimized in terms of economy and size; meanwhile, the GST material has the advantages of high crystallization rate, large variation of amorphous and crystalline resistances and refractive indexes, good reversibility between the amorphous and crystalline states and the like; in addition, in the system, all-optical switching directly processes optical signals in an optical domain without optical-electrical-optical conversion, so that the system is not limited by an electronic bottleneck and has the advantages of high speed, broadband, transparency, low power consumption, potential low cost and the like.
The present embodiment is only for explaining the present invention, and it is not limited to the present invention, and those skilled in the art can make modifications of the present embodiment without inventive contribution as needed after reading the present specification, but all of them are protected by patent law within the scope of the claims of the present invention.

Claims (8)

1. A phased array radar system based on a phase change material optical switch is characterized in that: the three-layer structure element comprises a silicon substrate (31), a silicon dioxide buried oxide layer (32) and a silicon nitride layer which are sequentially arranged from bottom to top;
the silicon nitride layer includes: the waveguide comprises a first waveguide (1), a second waveguide (3), a third waveguide (4), a fourth waveguide (7), a fifth waveguide (8), a sixth waveguide (9), a seventh waveguide (10), an eighth waveguide (15), a ninth waveguide (16), a tenth waveguide (17), an eleventh waveguide (18), a twelfth waveguide (19), a thirteenth waveguide (20), a fourteenth waveguide (21) and a fifteenth waveguide (22) which are arranged in sequence;
the silicon nitride layer further includes: a first (2), a second (5), a third (6), a fourth (11), a fifth (12), a sixth (13) and a seventh (14) multimode interference region, the first waveguide (1) being connected to the second (3) and third (4) waveguides by the first multimode interference region (2), the second waveguide (3) being connected to the fourth (7) and fifth (8) waveguides by the second multimode interference region (5), the third waveguide (4) being connected to the sixth (9) and seventh (10) waveguides by the third multimode interference region (6), the fourth waveguide (7) being connected to the eighth (15) and ninth (16) waveguides by the fourth multimode interference region (11), the fifth waveguide (8) being connected to the tenth (17) and eleventh (18) waveguides by the fifth multimode interference region (12) -said sixth waveguide (9) is connected to a twelfth waveguide (19) and to a thirteenth waveguide (20) by means of a sixth multimode interference region (13), -said seventh waveguide (10) is connected to a fourteenth waveguide (21) and to a fifteenth waveguide (22) by means of a seventh multimode interference region (14);
and a first GST layer (23), a second GST layer (24), a third GST layer (25), a fourth GST layer (26), a fifth GST layer (27), a sixth GST layer (28), a seventh GST layer (29) and an eighth GST layer (30) are respectively deposited on the upper surfaces of the eighth waveguide (15), the ninth waveguide (16), the tenth waveguide (17), the eleventh waveguide (18), the twelfth waveguide (19), the thirteenth waveguide (20), the fourteenth waveguide (21) and the fifteenth waveguide (22).
2. The phased array radar system based on phase change material optical switches of claim 1, wherein: the widths of the first waveguide (1), the second waveguide (3), the third waveguide (4), the fourth waveguide (7), the fifth waveguide (8), the sixth waveguide (9), the seventh waveguide (10), the eighth waveguide (15), the ninth waveguide (16), the tenth waveguide (17), the eleventh waveguide (18), the twelfth waveguide (19), the thirteenth waveguide (20), the fourteenth waveguide (21) and the fifteenth waveguide (22) are 1-2 μm.
3. The phased array radar system based on phase change material optical switches of claim 1, wherein: the first GST layer (23), the second GST layer (24), the third GST layer (25), the fourth GST layer (26), the fifth GST layer (27), the sixth GST layer (28), the seventh GST layer (29) and the eighth GST layer (30) are deposited in an evaporation mode, and the first GST layer (23), the second GST layer (24), the third GST layer (25), the fourth GST layer (26), the fifth GST layer (27), the sixth GST layer (28), the seventh GST layer (29) and the eighth GST layer (30) are 50-800nm in thickness.
4. The phased array radar system based on phase change material optical switches of claim 1, wherein: the micro short pulse laser (33) is precisely positioned to a first GST layer (23), a second GST layer (24), a third GST layer (25), a fourth GST layer (26), a fifth GST layer (27), a sixth GST layer (28), a seventh GST layer (29), and an eighth GST layer (30) by emitting a short pulse laser beam.
5. The phased array radar system based on phase change material optical switches of claim 1, wherein: the height of the silicon substrate (31) is larger than that of the silicon dioxide buried oxide layer (32), and the height of the silicon dioxide buried oxide layer (32) is larger than that of the silicon nitride layer.
6. A phase change material optical switch based phased array radar system according to claim 1 or 2 or 3 or 4 or 5, wherein: the waveguide structure comprises a first waveguide (1), a second waveguide (3), a third waveguide (4), a fourth waveguide (7), a fifth waveguide (8), a sixth waveguide (9), a seventh waveguide (10), an eighth waveguide (15), a ninth waveguide (16), a tenth waveguide (17), an eleventh waveguide (18), a twelfth waveguide (19), a thirteenth waveguide (20), a fourteenth waveguide (21), a fifteenth waveguide (22), a first multimode interference region (2), a second multimode interference region (5), a third multimode interference region (6), a fourth multimode interference region (11), a fifth multimode interference region (12), a sixth multimode interference region (13), a seventh multimode interference region (14), a first GST layer (23), a second GST layer (24), a third GST layer (25), a fourth GST layer (26), a fifth GST layer (27), a sixth GST layer (28), The height of the seventh GST layer (29) and the eighth GST layer (30) is in the range of 0.3-1.5 μm.
7. The phased array radar system based on phase change material optical switches of claim 1 or 5, wherein: the height of the silicon substrate (31) is 300-600 μm.
8. The phased array radar system based on phase change material optical switches of claim 1 or 5, wherein: the height of the silicon dioxide oxygen burying layer (32) is 2-3 mu m.
CN202210637947.8A 2022-06-08 2022-06-08 Phased array radar system based on phase change material photoswitch Pending CN114721089A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210637947.8A CN114721089A (en) 2022-06-08 2022-06-08 Phased array radar system based on phase change material photoswitch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210637947.8A CN114721089A (en) 2022-06-08 2022-06-08 Phased array radar system based on phase change material photoswitch

Publications (1)

Publication Number Publication Date
CN114721089A true CN114721089A (en) 2022-07-08

Family

ID=82233159

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210637947.8A Pending CN114721089A (en) 2022-06-08 2022-06-08 Phased array radar system based on phase change material photoswitch

Country Status (1)

Country Link
CN (1) CN114721089A (en)

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020085791A1 (en) * 2000-10-10 2002-07-04 Zen Photonics Co., Ltd Digital thermo-optic switch integrated with variable optical attenuators
CN104849878A (en) * 2015-06-03 2015-08-19 东南大学 Silicon nitride waveguide calorescence switch array chip based on Mach-Zahnder structure and production method thereof
CN106324865A (en) * 2016-08-19 2017-01-11 上海交通大学 Phase change material-based three-dimensional integrated optical switch
CN109581584A (en) * 2018-11-22 2019-04-05 上海理工大学 A kind of heterogeneous integrated scanning chip of silicon-lithium niobate and preparation method thereof, application
CN110187521A (en) * 2019-05-15 2019-08-30 上海交通大学 Resonant cavity assists phase transformation reconfigurable optical signal processing chip
CN110426865A (en) * 2019-07-31 2019-11-08 长春理工大学 The thermo-optical switch of guided mode specular displacement effect and multimode interference effect is utilized in silicon waveguide corner mirror
CN111258001A (en) * 2020-03-20 2020-06-09 北京工业大学 Based on Si-Ge2Sb2Te5On-chip photonic multilevel switch for hybrid waveguide
CN112526673A (en) * 2020-11-11 2021-03-19 中山大学 High-power soliton frequency comb chip and pulse generation system and method thereof
CN112946929A (en) * 2021-02-04 2021-06-11 中国科学院长春光学精密机械与物理研究所 One-dimensional optical phased array based on apodization modulation
CN214256319U (en) * 2020-12-22 2021-09-21 上海新微技术研发中心有限公司 90-degree optical mixer based on silicon-based silicon nitride waveguide
US20210325762A1 (en) * 2020-04-21 2021-10-21 National Taiwan University Of Science And Technology Rphase-controlled optical waveguide antenna array
CN214795505U (en) * 2021-06-21 2021-11-19 国科光芯(海宁)科技股份有限公司 Optical phased array antenna
CN215180992U (en) * 2021-05-27 2021-12-14 上海新微技术研发中心有限公司 Optical mixer
CN114137745A (en) * 2021-12-02 2022-03-04 程唐盛 Antimony diselenide silicon-based electric dimming switch, optical switch array and chip
CN114371532A (en) * 2021-08-16 2022-04-19 北京工业大学 Branched waveguide interactive regulation and control ultrafast all-optical switch based on phase change material

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020085791A1 (en) * 2000-10-10 2002-07-04 Zen Photonics Co., Ltd Digital thermo-optic switch integrated with variable optical attenuators
CN104849878A (en) * 2015-06-03 2015-08-19 东南大学 Silicon nitride waveguide calorescence switch array chip based on Mach-Zahnder structure and production method thereof
CN106324865A (en) * 2016-08-19 2017-01-11 上海交通大学 Phase change material-based three-dimensional integrated optical switch
CN109581584A (en) * 2018-11-22 2019-04-05 上海理工大学 A kind of heterogeneous integrated scanning chip of silicon-lithium niobate and preparation method thereof, application
CN110187521A (en) * 2019-05-15 2019-08-30 上海交通大学 Resonant cavity assists phase transformation reconfigurable optical signal processing chip
CN110426865A (en) * 2019-07-31 2019-11-08 长春理工大学 The thermo-optical switch of guided mode specular displacement effect and multimode interference effect is utilized in silicon waveguide corner mirror
CN111258001A (en) * 2020-03-20 2020-06-09 北京工业大学 Based on Si-Ge2Sb2Te5On-chip photonic multilevel switch for hybrid waveguide
US20210325762A1 (en) * 2020-04-21 2021-10-21 National Taiwan University Of Science And Technology Rphase-controlled optical waveguide antenna array
CN112526673A (en) * 2020-11-11 2021-03-19 中山大学 High-power soliton frequency comb chip and pulse generation system and method thereof
CN214256319U (en) * 2020-12-22 2021-09-21 上海新微技术研发中心有限公司 90-degree optical mixer based on silicon-based silicon nitride waveguide
CN112946929A (en) * 2021-02-04 2021-06-11 中国科学院长春光学精密机械与物理研究所 One-dimensional optical phased array based on apodization modulation
CN215180992U (en) * 2021-05-27 2021-12-14 上海新微技术研发中心有限公司 Optical mixer
CN214795505U (en) * 2021-06-21 2021-11-19 国科光芯(海宁)科技股份有限公司 Optical phased array antenna
CN114371532A (en) * 2021-08-16 2022-04-19 北京工业大学 Branched waveguide interactive regulation and control ultrafast all-optical switch based on phase change material
CN114137745A (en) * 2021-12-02 2022-03-04 程唐盛 Antimony diselenide silicon-based electric dimming switch, optical switch array and chip

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ATEFEH SHADMANI ET AL: "Design and Simulation of Dual Polarization GST on Silicon Nitride Optical_Modulator", 《IEEE》 *
HANYU ZHANG ET AL: "Ultracompact Si GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation", 《IEEE PHOTONICS JOURNAL》 *
杨常鸣: "基于相变材料的非易失性双模式光开关的设计与研究", 《中国优秀博硕士学位论文全文数据库(硕士)》 *

Similar Documents

Publication Publication Date Title
He et al. Review of photonic integrated optical phased arrays for space optical communication
Fatemi et al. A nonuniform sparse 2-D large-FOV optical phased array with a low-power PWM drive
CN110174661B (en) Optical phased array two-dimensional laser radar scanning chip based on polarization multiplexing
US9318868B2 (en) Tunable hybrid laser with carrier-induced phase control
US7729572B1 (en) Optical tapped time delay modules and arrays
US9470955B2 (en) Nanophotonic spatial light modulator
US9223086B2 (en) Wavefront synthesizer systems
US11175454B2 (en) Light escalators in optical circuits between thick and thin waveguides
Amin et al. A lateral MOS-capacitor-enabled ITO Mach–Zehnder modulator for beam steering
KR102070349B1 (en) Lithium niobate-silicon nitride phase modulator and optical phased array antenna using the same
CN106773028B (en) A kind of laser beam scanning system
Chen et al. Opportunities and challenges for large-scale phase-change material integrated electro-photonics
KR20190073445A (en) Low-cost and small optical phased array using electro-optic beam steering
US6665111B2 (en) Laser beam steering system
CN106646929A (en) Electro-optic unit and optical phased array for integrated optical phased array
US6522799B1 (en) Optical planar waveguide device and method of fabrication
CN115032819B (en) Co-packaged light engine system and silicon-based modulator for phase change material array thereof
CN113534167A (en) Phased array laser radar chip with switchable antennas, use method and laser radar
Hong et al. Ultracompact nanophotonics: light emission and manipulation with metasurfaces
Tsuda Silicon photonics platforms for optical communication systems, outlook on future developments
CN114721089A (en) Phased array radar system based on phase change material photoswitch
CN100365471C (en) Optical phase array device
Mandal et al. Reconfigurable phase change chalcogenide grating couplers with ultrahigh modulation contrast
CN115685135A (en) Transmitting module, related equipment and detection method
Ma et al. Photonic integrated optical phased arrays and their applications

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20220708

RJ01 Rejection of invention patent application after publication