CN215180992U - Optical mixer - Google Patents
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- CN215180992U CN215180992U CN202121158130.XU CN202121158130U CN215180992U CN 215180992 U CN215180992 U CN 215180992U CN 202121158130 U CN202121158130 U CN 202121158130U CN 215180992 U CN215180992 U CN 215180992U
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Abstract
The application provides an optical mixer, optical mixer includes: a base layer; the input waveguide is strip-shaped, and the input end of the input waveguide receives input light; the multimode interference waveguide is rectangular, the input end of the multimode interference waveguide is coupled with the output end of the input waveguide and receives light transmitted from the input waveguide, and the multimode interference waveguide performs frequency mixing processing on the received light; the output waveguide is strip-shaped and is arranged on the substrate layer, the input end of the output waveguide is coupled with the output end of the multimode interference waveguide, the output waveguide receives the mixed light output from the output end of the multimode interference waveguide, and the output waveguide transmits the received mixed light and outputs the mixed light from the output end of the output waveguide; and the covering layer covers the upper surfaces and the side surfaces of the input waveguide, the multimode interference waveguide and the output waveguide respectively, the input waveguide, the multimode interference waveguide and the output waveguide are made of silicon nitride, the number of the input waveguides is 3, and the number of the output waveguides is 3.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to an optical mixer.
Background
The silicon-based photoelectronic technology is a new generation technology for developing and integrating optical devices by utilizing the existing Complementary Metal Oxide Semiconductor (CMOS) process based on silicon and silicon-based substrate materials (such as SiGe/Si, SOI and the like), and combines the characteristics of ultra-large-scale and ultra-high-precision manufacturing of an integrated circuit technology and the advantages of ultra-high speed and ultra-low power consumption of a photonic technology. The silicon-based optoelectronic technology has urgent application requirements in the fields of optical communication and optical interconnection at the present stage, and is also a potential technology for realizing on-chip optical interconnection and optical computers in the future.
The development of silicon-based optoelectronic devices in the C band is mature, but the C band has shown the trend of "capacity shrinkage", and the related research on silicon-based optoelectronic devices is gradually expanding to other bands. Recently, Wavelength Division Multiplexing (WDM) communication systems based on 2 μm wavelength band of hollow core photonic band gap fiber have proven to have a wide application prospect.
It should be noted that the above background description is only for the convenience of clear and complete description of the technical solutions of the present application and for the understanding of those skilled in the art. Such solutions are not considered to be known to the person skilled in the art merely because they have been set forth in the background section of the present application.
SUMMERY OF THE UTILITY MODEL
In order to obtain higher capacity in the 2 μm band, a higher order modulation format such as Quadrature Amplitude Modulation (QAM) or the like must be applied. The optical mixer suitable for the 2 mu m wave band is developed, and the method has important significance for realizing a compact coherent optical receiver of the 2 mu m wave band. In a coherent optical receiver, besides using a pair of balanced detectors of 90-degree optical mixers to perform coherent detection, an optical mixer with three single-ended photodetectors can be used to perform 120-degree optical mixing to perform coherent detection. The 120-degree optical mixer has a larger operating bandwidth and manufacturing tolerance than the 90-degree optical mixer.
The inventor of the application finds that no 120-degree optical mixer suitable for the 2 mu m waveband is reported at present.
The embodiment of the application provides an optical mixer and a manufacturing method thereof, wherein a waveguide structure is made of silicon nitride, so that the optical mixer which is low in loss, low in phase deviation and high in optical bandwidth and suitable for a 2 mu m waveband can be manufactured.
According to an aspect of an embodiment of the present application, there is provided an optical mixer, including:
a base layer provided on a substrate;
the input waveguide is strip-shaped and is arranged on the substrate layer, and the input end of the input waveguide receives input light;
the multimode interference waveguide is rectangular and arranged on the substrate layer, the input end of the multimode interference waveguide is coupled with the output end of the input waveguide and receives light transmitted from the input waveguide, and the multimode interference waveguide performs frequency mixing processing on the received light;
an output waveguide, which is a strip and is disposed on the substrate layer, wherein an input end of the output waveguide is coupled to an output end of the multimode interference waveguide, and receives the mixed light output from the output end of the multimode interference waveguide, and the output waveguide transmits the received mixed light and outputs the mixed light from the output end of the output waveguide; and
a cladding layer covering respective upper surfaces and side surfaces of the input waveguide, the multi-mode interference waveguide, and the output waveguide,
the input waveguide, the multimode interference waveguide and the output waveguide are made of silicon nitride (Si)3N4)，
The number of said input waveguides is 3,
in a waveguide plane in which an extending direction of the input waveguides is located, 3 input waveguides are arranged in parallel in a direction perpendicular to the extending direction of the input waveguides;
the number of output waveguides is 3,
in a waveguide plane in which the extending direction of the input waveguide is located, 3 output waveguides are arranged in parallel in a direction perpendicular to the extending direction of the output waveguides.
According to an aspect of the embodiments of the present application, wherein the optical mixer further comprises:
a first tapered waveguide having a first end connected to the output end of the input waveguide and a second end connected to the input end of the multimode interference waveguide; and
and the first end of the second tapered waveguide is connected with the output end of the multimode interference waveguide, and the second end of the second tapered waveguide is connected with the input end of the output waveguide.
According to an aspect of the embodiments of the present application, wherein, in the waveguide plane, in a direction perpendicular to the extension direction of the input waveguide,
the first end of the first tapered waveguide has a dimension that is smaller than a dimension of the second end of the first tapered waveguide.
According to an aspect of the embodiments of the present application, wherein, in the waveguide plane, in a direction perpendicular to the extending direction of the output waveguide,
the first end of the second tapered waveguide has a size larger than a size of the second end of the second tapered waveguide.
According to an aspect of the embodiments of the present application, wherein the cover layer further covers respective upper surfaces and side surfaces of the first tapered waveguide and the second tapered waveguide.
According to an aspect of the embodiments of the present application, wherein the material of the base layer is silicon dioxide (SiO)2) And the material of the covering layer is silicon dioxide.
According to an aspect of an embodiment of the present application, there is provided a method of manufacturing an optical mixer, the method including:
forming a base layer on the surface of the substrate;
forming an input waveguide, a multi-mode interference waveguide and an output waveguide on the surface of the substrate layer, wherein the input waveguide, the multi-mode interference waveguide and the output waveguide are all made of silicon nitride (Si)3N4) (ii) a And
forming a cladding layer covering respective upper surfaces and side surfaces of the input waveguide, the multi-mode interference waveguide, and the output waveguide,
wherein the input waveguide is strip-shaped, the multi-mode interference waveguide is rectangular, an input end of the multi-mode interference waveguide is coupled with an output end of the input waveguide,
the output waveguide is strip-shaped, the input end of the output waveguide is coupled with the output end of the multimode interference waveguide,
the number of said input waveguides is 3,
in a waveguide plane in which an extending direction of the input waveguides is located, 3 input waveguides are arranged in parallel in a direction perpendicular to the extending direction of the input waveguides;
the number of output waveguides is 3,
in the waveguide plane, 3 output waveguides are arranged in parallel in a direction perpendicular to an extending direction of the output waveguides.
According to an aspect of the embodiments of the present application, wherein the method further comprises:
a first tapered waveguide and a second tapered waveguide are further formed on the surface of the substrate layer,
wherein the content of the first and second substances,
a first end of the first tapered waveguide is connected to an output end of the input waveguide, a second end of the first tapered waveguide is connected to an input end of the multimode interference waveguide,
the first end of the second conical waveguide is connected with the output end of the multimode interference waveguide, the second end of the second conical waveguide is connected with the input end of the output waveguide,
and the covering layer also covers the respective upper surfaces and side surfaces of the first tapered waveguide and the second tapered waveguide.
According to an aspect of the embodiments of the present application, wherein the cover layer further covers respective upper surfaces and side surfaces of the first tapered waveguide and the second tapered waveguide.
According to an aspect of the embodiments of the present application, wherein the material of the base layer is silicon dioxide (SiO)2) And the material of the covering layer is silicon dioxide.
The beneficial effect of this application lies in: in this optical mixer, a 120-degree optical mixer suitable for a 2 μm band with low loss, low phase shift, and high optical bandwidth can be manufactured by fabricating a waveguide structure using silicon nitride.
Specific embodiments of the present application are disclosed in detail with reference to the following description and drawings, indicating the manner in which the principles of the application may be employed. It should be understood that the embodiments of the present application are not so limited in scope. The embodiments of the application include many variations, modifications and equivalents within the spirit and scope of the appended claims.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments, in combination with or instead of the features of the other embodiments.
It should be emphasized that the term "comprises/comprising" when used herein, is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the application, are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:
fig. 1 is a schematic top view in a transverse direction of an optical mixer according to embodiment 1 of the present application;
FIG. 2 is a schematic view of one embodiment of a base layer, waveguide, and cladding layer of an embodiment of the present application;
FIG. 3 is a diagram of simulation results of the 120-degree optical mixer at different wavelengths;
FIG. 4 is a schematic diagram of simulation results of parasitic losses for 120 degree optical mixers of different widths;
fig. 5 illustrates a method for manufacturing an optical mixer according to embodiment 2 of the present application.
Detailed Description
The foregoing and other features of the present application will become apparent from the following description, taken in conjunction with the accompanying drawings. In the description and drawings, particular embodiments of the application are disclosed in detail as being indicative of some of the embodiments in which the principles of the application may be employed, it being understood that the application is not limited to the described embodiments, but, on the contrary, is intended to cover all modifications, variations, and equivalents falling within the scope of the appended claims.
In the description of the embodiments of the present application, for convenience of description, a direction parallel to the surface of the substrate is referred to as "lateral direction", and a direction perpendicular to the surface of the substrate is referred to as "longitudinal direction", in which the "thickness" of each component means the dimension of the component in the "longitudinal direction", a direction directed from the substrate toward the waveguide structure is referred to as "upper" direction, and a direction opposite to the "upper" direction is referred to as "lower" direction; in the "lateral direction", the dimension along the direction in which the stripes of the input waveguide extend is "long", and the dimension in the direction perpendicular to the direction in which the stripes of the input waveguide extend is "wide".
In the description of the embodiments of the present application, a plane in which the extending direction of the input waveguide is located, a plane in which the extending direction of the output waveguide is located, and a plane in which the extending direction of the multimode interference waveguide is located may be referred to as a waveguide plane, and the waveguide plane may be parallel to the surface of the substrate. The first direction D1 and the second direction D2 may be two directions perpendicular to each other on the waveguide plane.
Example 1
The embodiment of the application provides an optical mixer.
Fig. 1 is a schematic top view in the lateral direction of an optical mixer according to embodiment 1 of the present application.
As shown in fig. 1, the optical mixer 1 includes: a substrate layer (not shown), an input waveguide 11, a multimode interference waveguide 12, an output waveguide 13, and a cladding layer (not shown).
In this embodiment, the base layer may be provided on the substrate. The substrate may be a wafer commonly used in the semiconductor fabrication art, such as a Silicon wafer, a Silicon-On-Insulator (SOI) wafer, and the like. In addition, a surface of the wafer further has a thin film and a structure necessary for a semiconductor device or a Micro Electro Mechanical System (MEMS) device, an optoelectronic device, or the like. This is not limited by the present application.
The input waveguide 11 is strip-shaped and disposed on the substrate layer. The input waveguide 11 extends along a first direction D1 shown in fig. 1. The input end 111 of the input waveguide 11 receives input light, wherein the signal light and the local oscillation light are simultaneously input to the input ends 111 of the different input waveguides 11. The input waveguide 11 transmits input light received at the input end 111 to the multimode waveguide 12.
The multi-mode interference waveguide 12 is a rectangle disposed on the substrate layer, and the length direction of the rectangle is the first direction D1 shown in fig. 1. The input end 121 of the multi-mode interference waveguide 12 is coupled to the output end 112 of the input waveguide 11 for receiving light transmitted from the input waveguide 11. The multimode interference waveguide 12 performs a mixing process on the received light, for example, the multimode interference waveguide 12 performs a mixing process on the signal light and the local oscillation light received from the input waveguide 11, and the mixed light (i.e., mixed light) is output from an output end 122 of the multimode interference waveguide 12.
The output waveguide 13 is a strip and is disposed on the substrate layer. The output waveguide 13 extends along a first direction D1 shown in fig. 1. The input 131 of the output waveguide 13 is coupled to the output 122 of the multimode interference waveguide 12 and receives the mixed light output from the output 122 of the multimode interference waveguide 12. The output waveguide 13 transmits the received mixed light and outputs from the output end 132 of the output waveguide 13.
The cladding layer covers the respective upper surfaces and side surfaces of the input waveguide 11, the multimode interference waveguide 12 and the output waveguide 13.
In the present embodiment, the cladding layer and the substrate layer can surround the input waveguide 11, the multimode interference waveguide 12 and the output waveguide 13, whereby a refractive index difference is generated at the interface of the waveguide and the cladding layer and the substrate layer, so that light is totally reflected at the interface and propagates in the direction in which the waveguide extends. For example, the material of the base layer is silicon dioxide (SiO)2) The material of the covering layer is silicon dioxide.
In the present embodiment, the input waveguide 11, the multimode interference waveguide 12 and the output waveguide 13 are all made of silicon nitride (Si)3N4). Silicon nitride (Si)3N4) As a medium refractive index material, the material has the advantages of low transmission loss, large transparent window and compatibility with CMOS (complementary metal oxide semiconductor) process due to lower scattering loss caused by side wall roughness. Therefore, in the present embodiment, the input waveguide 11, the multimode interference waveguide 12, and the output waveguide 13 are made of a silicon nitride material, and an optical mixer suitable for a 2 μm band with low loss, low phase shift, and high optical bandwidth can be obtained.
In this embodiment, as shown in fig. 1, the optical mixer 1 may further include: a first tapered waveguide 14 and a second tapered waveguide 15.
Wherein the first end 141 of the first tapered waveguide 14 is connected to the output end 112 of the input waveguide 11, and the second end 142 of the first tapered waveguide 14 is connected to the input end 121 of the multimode interference waveguide 12, i.e. the input waveguide 11 and the multimode interference waveguide 12 are connected through the first tapered waveguide 14; the first end 151 of the second tapered waveguide 15 is connected to the output end 122 of the multimode interference waveguide 12, and the second end 152 of the second tapered waveguide 15 is connected to the input end of the output waveguide 131, that is, the multimode interference waveguide 12 and the output waveguide 13 are connected through the second tapered waveguide 15.
As shown in fig. 1, in a direction perpendicular to the extending direction of the input waveguide 11 (e.g., direction D2 shown in fig. 1), the size of the first end 141 of the first tapered waveguide 14 is smaller than the size of the second end 142 of the first tapered waveguide 14, and the size of the first end 141 to the size of the second end 142 may be gradually changed, thereby achieving adiabatic transmission. For example, the first tapered waveguide 14 increases linearly in size in the direction D2, or increases non-linearly (e.g., curves) from the first end 141 to the second end 142.
In a direction perpendicular to the extending direction of the output waveguide 13 (for example, direction D2 shown in fig. 1), the size of the first end 151 of the second tapered waveguide 15 is larger than the size of the second end 152 of the second tapered waveguide 15, and the size of the first end 151 to the size of the second end 152 may be gradually changed, thereby achieving adiabatic transfer. For example, from first end 151 to second end 152, second tapered waveguide 15 decreases linearly in size in direction D2, or decreases non-linearly (e.g., in a curve).
In the present embodiment, the first tapered waveguide 14 and the second tapered waveguide 15 provided as above can reduce loss by mode conversion.
In the present embodiment, in the case of having the first tapered waveguide 14 and the second tapered waveguide 15, the covering layer also covers the respective upper surfaces and side surfaces of the first tapered waveguide 14 and the second tapered waveguide 15, thereby facilitating the propagation of light in the first tapered waveguide 14 and the second tapered waveguide 15.
FIG. 2 is a schematic diagram of one embodiment of a substrate layer, waveguide, and cladding layer of an embodiment of the present application. As shown in fig. 2, the waveguide 20 is provided on the base layer 21, and the cladding layer 22 covers the upper surface and the side surface of the waveguide 20. In fig. 2, the waveguide 20 includes: an input waveguide 11, a multimode interference waveguide 12, an output waveguide 13, a first tapered waveguide 14, and a second tapered waveguide 15 shown in fig. 1.
In one specific example, the waveguide 20 (i.e., Si)3N4Layer) thickness of 400nm, base layer 21 and capping layer 22 (SiO)2) The thickness of the layer was 3 μm.
In the present embodiment, as shown in fig. 1, the number of input waveguides 11 is 3, and 3 input waveguides 11 are arranged in parallel, for example, at equal intervals in a direction perpendicular to the extending direction of the input waveguide 13 (for example, a direction D2 shown in fig. 1). The number of the output waveguides 13 is 3, and the 3 output waveguides 13 are arranged in parallel, for example, at equal intervals in a direction perpendicular to the extending direction of the output waveguides 13 (for example, a direction D2 shown in fig. 1). Thus, the optical mixer 1 can be a 3 × 3MMI (multimode interference) coupler type 120-degree optical mixer, thereby realizing a 120-degree optical mixer with low loss, low phase deviation, and high optical bandwidth.
Next, the performance of the 120-degree optical mixer of the present application will be explained.
Fig. 3 is a diagram illustrating simulation results of the 120-degree optical mixer at different wavelengths. In the following description, (a) represents an additive Loss (process Loss), (b) represents a Common Mode Rejection Ratio (CMRR), and (c) represents a phase deviation.
In the 120-degree optical mixer corresponding to fig. 3, the width (e.g., the dimension of the multimode interference waveguide 12 in the direction D2 in fig. 1) of the multimode interference waveguide is 12 μm, and the length (e.g., the dimension of the multimode interference waveguide 12 in the direction D1 in fig. 1) of the multimode interference waveguide is 165 μm.
As shown in fig. 3, at a center Wavelength (Wavelength) of 2000nm, the parasitic loss, CMRR, and phase deviation of the device (i.e., the 120-degree optical mixer) are better than 0.15dB, -30dB, and 1.4 °, respectively. As the wavelength shifts, the performance of the device changes. Wherein, in the wavelength range of 1915nm-2080nm, the additional loss of the device is less than 1 dB; in the wavelength range of 1920nm-2075nm, the CMRR of the device is lower than-20 dB; in the wavelength range of 1955nm-2100nm, the phase deviation of the device is less than + -5 deg.
Fig. 4 is a schematic diagram of simulation results of parasitic losses for 120-degree optical mixers of different widths. As shown in FIG. 4, when the deviation of the width (e.g., the dimension of the multimode interference waveguide 12 in the direction D2 in FIG. 1) of the multimode interference waveguide is about + -0.1 μm and the deviation of the length (e.g., the dimension of the multimode interference waveguide 12 in the direction D1 in FIG. 1) is about + -3 μm, the 120-degree optical mixer of the present application can still maintain the additional loss less than 1dB at the bandwidth of 50nm (i.e., 1990nm-2040nm), the CMRR less than-20 dB and the phase deviation less than + -5 degrees, thereby meeting the requirements of OIF (optical Internet Forum) and having larger process tolerance.
Example 2
Embodiment 2 provides a method for manufacturing an optical mixer, which is used for manufacturing the optical mixer 1 described in embodiment 1.
Fig. 5 is a manufacturing method of an optical mixer of embodiment 2, which includes, as shown in fig. 5:
In step 51, and step 53, the base layer and the cover layer are, for example, the base layer 21 and the cover layer 22 shown in fig. 2, respectively. The input waveguide, the multimode interference waveguide, and the output waveguide are, for example, an input waveguide 11, a multimode interference waveguide 12, and an output waveguide 13 shown in fig. 1.
As shown in fig. 5, the manufacturing method further includes:
a first tapered waveguide and a second tapered waveguide are also formed on the surface of the base layer, step 54.
Wherein step 54 and step 52 may be combined into one step.
In the present embodiment, with respect to the description of the input waveguide, the multimode interference waveguide, the output waveguide, the base layer, the cladding layer, the first tapered waveguide, and the second tapered waveguide, reference may be made to the description related to embodiment 1.
Next, a method for manufacturing an optical mixer according to the present application will be described with reference to a specific example.
In another specific embodiment, the substrate is a silicon substrate or an SOI substrate, and the main process flow is as follows:
the method comprises the following steps: growing a layer of SiO on a substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD)2Layer as a base layer.
Step two: by Low Pressure Chemical Vapor Deposition (LPCVD) on SiO2Depositing a layer of Si on the surface of the layer3N4Forming Si by photolithography and etching process3N4Waveguide pattern of Si3N4The waveguide pattern includes, for example, an input waveguide, a multimode interference waveguide, an output waveguide, a first tapered waveguide, and a second tapered waveguide.
Step three: depositing a layer of SiO by Plasma Enhanced Chemical Vapor Deposition (PECVD)2As a cover layer.
The present application has been described in conjunction with specific embodiments, but it should be understood by those skilled in the art that these descriptions are intended to be illustrative, and not limiting. Various modifications and adaptations of the present application may occur to those skilled in the art based on the spirit and principles of the application and are within the scope of the application.
Claims (6)
1. An optical mixer, comprising:
a base layer provided on a substrate;
the input waveguide is strip-shaped and is arranged on the substrate layer, and the input end of the input waveguide receives input light;
the multimode interference waveguide is rectangular and arranged on the substrate layer, the input end of the multimode interference waveguide is coupled with the output end of the input waveguide and receives light transmitted from the input waveguide, and the multimode interference waveguide performs frequency mixing processing on the received light;
an output waveguide, which is a strip and is disposed on the substrate layer, wherein an input end of the output waveguide is coupled to an output end of the multimode interference waveguide, and receives the mixed light output from the output end of the multimode interference waveguide, and the output waveguide transmits the received mixed light and outputs the mixed light from the output end of the output waveguide; and
a cladding layer covering respective upper surfaces and side surfaces of the input waveguide, the multi-mode interference waveguide, and the output waveguide,
the input waveguide, the multimode interference waveguide and the output waveguide are all made of silicon nitride,
the number of said input waveguides is 3,
in a waveguide plane in which an extending direction of the input waveguide is located, 3 input waveguides are arranged in parallel in a direction perpendicular to the extending direction of the input waveguide;
the number of output waveguides is 3,
in the waveguide plane, 3 output waveguides are arranged in parallel in a direction perpendicular to an extending direction of the output waveguides.
2. The optical mixer of claim 1, wherein the optical mixer further comprises:
a first tapered waveguide having a first end connected to the output end of the input waveguide and a second end connected to the input end of the multimode interference waveguide; and
and the first end of the second tapered waveguide is connected with the output end of the multimode interference waveguide, and the second end of the second tapered waveguide is connected with the input end of the output waveguide.
3. The optical mixer of claim 2,
a dimension of a first end of the first tapered waveguide is smaller than a dimension of a second end of the first tapered waveguide in a direction perpendicular to an extension direction of the input waveguide within the waveguide plane.
4. The optical mixer of claim 2,
the first end of the second tapered waveguide has a larger size than the second end of the second tapered waveguide in a direction perpendicular to the extending direction of the output waveguide within the waveguide plane.
5. The optical mixer of claim 2,
the cladding layer also covers the respective upper and side surfaces of the first and second tapered waveguides.
6. The optical mixer of claim 1,
the material of the substrate layer is silicon dioxide (SiO)2) And the material of the covering layer is silicon dioxide.
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| CN114721089A (en) * | 2022-06-08 | 2022-07-08 | 深圳大学 | Phased array radar system based on phase change material photoswitch |
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| CN114721089A (en) * | 2022-06-08 | 2022-07-08 | 深圳大学 | Phased array radar system based on phase change material photoswitch |
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