CN108231803A - Silicon nitride fiber waveguide device and graphene detector integrated chip and preparation method thereof - Google Patents
Silicon nitride fiber waveguide device and graphene detector integrated chip and preparation method thereof Download PDFInfo
- Publication number
- CN108231803A CN108231803A CN201711434640.3A CN201711434640A CN108231803A CN 108231803 A CN108231803 A CN 108231803A CN 201711434640 A CN201711434640 A CN 201711434640A CN 108231803 A CN108231803 A CN 108231803A
- Authority
- CN
- China
- Prior art keywords
- silicon nitride
- waveguide device
- fiber waveguide
- graphene
- nitride fiber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 79
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 77
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 65
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 239000000835 fiber Substances 0.000 title claims abstract description 48
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 230000003287 optical effect Effects 0.000 claims abstract description 34
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 39
- 229920002120 photoresistant polymer Polymers 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 230000008878 coupling Effects 0.000 claims description 15
- 238000010168 coupling process Methods 0.000 claims description 15
- 238000005859 coupling reaction Methods 0.000 claims description 15
- 238000000609 electron-beam lithography Methods 0.000 claims description 13
- 238000001259 photo etching Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 11
- 229910018503 SF6 Inorganic materials 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 10
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 230000002708 enhancing effect Effects 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000005543 nano-size silicon particle Substances 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims 1
- 230000005622 photoelectricity Effects 0.000 claims 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract description 6
- 230000005693 optoelectronics Effects 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000008054 signal transmission Effects 0.000 abstract description 3
- 230000005611 electricity Effects 0.000 abstract description 2
- 230000031700 light absorption Effects 0.000 abstract description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 235000019441 ethanol Nutrition 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 150000002576 ketones Chemical class 0.000 description 3
- 238000002604 ultrasonography Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 graphite Alkene Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12138—Sensor
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12176—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention is a kind of silicon nitride fiber waveguide device and graphene detector integrated chip and preparation method thereof, and structure includes the vertical coupled grating of silicon nitride, silicon nitride fiber waveguide device and graphene detector；Wherein the vertical coupled grating of silicon nitride is optical signal input port, connects silicon nitride fiber waveguide device；Silicon nitride fiber waveguide device handles optical signal, connects and optical signal transmission gives graphene detector by treated, optical signal carries out opto-electronic conversion to graphene detector to treated.Advantage：1）A variety of restructural optical signal prosessing functions can be realized by the silicon nitride fiber waveguide device for designing different structure；2）Graphene detector has wider array of light absorption wavelength range, broader electricity bandwidth compared to traditional indium phosphide detector；3）Device architecture is simple, it can be achieved that the single chip integrated optical signal prosessing functional unit of on piece and chip.
Description
Technical field
The present invention relates to a kind of silicon nitride fiber waveguide devices and graphene detector integrated chip and production method, belong to
In integrated micro optical signal processing technology field.
Background technology
Photon technology tool with it is roomy, transmission loss is low, electromagnetism interference, the outstanding advantages such as tunable, by photon technology with
Frequency microwave technological incorporation intersects, and produces microwave photon technology.By by frequency microwave signal modulation on laser, Bian Ke
The functions such as signal generation, modulation, processing, long range low-loss transmission are realized in optical frequency, be the Fashion of Future communications industry and radar,
The key technology of the military domains such as electronic warfare.Microwave photon signal processing has been achieved with numerous at present as one of research hotspot
Photonic signal processing function has light filtering, photoswitch, light delay, differential, integration and Hilbert transform etc..In addition, as micro-
The receiving terminal of the sub- communication link of the glistening light of waves generally requires and realizes microwave filtering, photoelectric converting function.Fiber waveguide device has size
Advantage that is small, restructural, being easily integrated, directly made of ripe microelectronics CMOS technology or grown on silica-base material,
The dissimilar materials such as indium phosphide are bonded, to make the technology of microwave photonics integrated device.It is on chip dimension, by microwave skill
Art organically blends to the high-speed wideband processing capacity of signal to the fine processing ability and photon technology of signal, can effectively solve
Certainly traditional microwave radio-frequency technique problem provides miniaturization, low-power consumption, highly reliable and low to promote hyundai electronics information equipment performance
The subversiveness solution of cost.
Indium phosphide detector and silicon-based optical waveguide device is integrated it has been reported that real using heterogeneous transfer integrated technology at present
It is existing, but indium phosphide material for detector is complicated, and operating wavelength range is relatively narrow, of high cost, and device process steps are more, and to different
The requirement of matter integrated technique is high, limits realization and the application prospect of the integrated chip.
Invention content
Proposed by the present invention is a kind of silicon nitride fiber waveguide device and graphene detector integrated chip and production method,
The problem of purpose is for existing indium phosphide detector and silicon-based optical waveguide device integrated chip technology difficulty big, of high cost, carries
Go out in a manner that graphene detector and nitridation silicon-based optical waveguide device integrate, wherein silicon nitride fiber waveguide device is to optical signal
It is handled, to treated, optical signal carries out opto-electronic conversion to graphene detector, at single chip integrated optical signal
Manage functional unit and chip.
The technical solution of the present invention：Silicon nitride fiber waveguide device and graphene detector integrated chip, structure packet
Include the vertical coupled grating 1 of silicon nitride, silicon nitride fiber waveguide device 2 and graphene detector 3；The wherein vertical coupled grating of silicon nitride
For optical signal input port, the A multi-mode interference couplers 6 in silicon nitride fiber waveguide device 2 are connected, silicon nitride fiber waveguide device 2 is right
Optical signal is handled, and is passed through the B multi-mode interference couplers 6 in silicon nitride fiber waveguide device 2 and connected and will treated light
Signal transmission is to graphene detector 3, and to treated, optical signal carries out opto-electronic conversion to graphene detector 3.
Production method includes the following steps：
1）First growing silicon oxide medium and silicon nitride medium on single crystal silicon material；
2）The photoresist mask pattern of silicon nitride waveguides device is prepared using electron beam lithography developing technique, using inductively
Plasma etching makes fiber waveguide device, removes photoresist mask；
3）The photoresist mask pattern of the vertical coupled grating of silicon nitride is prepared using electron beam lithography developing technique, using sensing
Coupled plasma etch makes vertical coupled grating, removes photoresist mask；
4）Growing silicon oxide medium is polished chip surface using CMP process；
5）Graphene film is shifted to material chip surface, and remove photoresist using wet method shifting process；
6）The photoresist mask of graphene figure is prepared using plane photoetching developing technique, reoxidizes the figure for completing graphene
Change；
7）Source-drain electrode figure is prepared using plane photoetching developing technique, is metallized, and removes and prepares source-drain electrode；
8）A floor height k insulating materials is grown as gate medium, and gate patterns, metal are prepared using electron beam lithography developing technique
Change, and remove and prepare gate electrode；
9）The medium hole pattern of source-drain electrode is prepared using plane photoetching developing technique, using sense coupling
Medium holes etching is completed, removal photoresist is completed integrated chip and made.
Advantages of the present invention：
1）A variety of restructural optical signal prosessing functions can be realized by the silicon nitride fiber waveguide device for designing different structure；
2）Graphene detector has wider array of light absorption wavelength range, broader electricity compared to traditional indium phosphide detector
Bandwidth；
3）Device architecture is simple, it can be achieved that the single chip integrated optical signal prosessing functional unit of on piece and chip.
Description of the drawings
Fig. 1 is chip material growth schematic diagram；
Fig. 2 is that silicon nitride fiber waveguide device prepares schematic diagram；
Fig. 3 is that the vertical coupled grating of silicon nitride prepares schematic diagram；
Fig. 4 is growing silicon oxide cap rock and chemically mechanical polishing schematic diagram；
Fig. 5 is graphene transfer and graphical schematic diagram；
Fig. 6 is that source-drain electrode prepares schematic diagram；
Fig. 7 is that gate medium growth prepares schematic diagram with gate electrode；
Fig. 8 is the integrated chip diagrammatic cross-section for completing to prepare；
Fig. 9 is silicon nitride fiber waveguide device and graphene detector integrated chip structure diagram.
1 it is the vertical coupled grating of silicon nitride in figure, 2 be silicon nitride fiber waveguide device, 3 be graphene detector, 4 is Mach
Zeng Deer interferometers, 5 be micro-ring resonator, 6A are that A multi-mode interference couplers, 6B are B multi-mode interference couplers, 7 are graphite
Alkene film, 8 be source-drain electrode, 9 be top-gated.
Specific embodiment
As shown in figure 9, silicon nitride fiber waveguide device and graphene detector integrated chip, it is vertical that structure includes silicon nitride
Coupling grating 1, silicon nitride fiber waveguide device 2 and graphene detector 3；Wherein the vertical coupled grating of silicon nitride is inputted for optical signal
Mouthful, the A multi-mode interference coupler 6A in connection silicon nitride fiber waveguide device 2, silicon nitride fiber waveguide device 2 to optical signal at
Reason, and pass through the B multi-mode interference couplers 6B connection graphenes detector 3 in silicon nitride fiber waveguide device 2, silicon nitride light wave
Leading device 2, optical signal is transmitted to graphene detector 3, graphene detector 3 by B multi-mode interference couplers 6B by treated
To treated, optical signal carries out opto-electronic conversion.
The vertical coupled grating 1 of the silicon nitride, screen periods are 1-1.2 microns, duty ratio 45-55%, and etching is deep
Spend is 280-320 nanometers.
The silicon nitride fiber waveguide device 2 includes Mach-Zehnder interferometers 4, micro-ring resonator 5, A multiple-mode interfence couplings
Clutch 6A, B multi-mode interference coupler 6B, wherein Mach-Zehnder interferometers 4 are set between A, B multi-mode interference coupler 6, micro-loop
Resonator 5 is respectively arranged on the both sides of Mach-Zehnder interferometers 4；Its duct width is 800-1200 nanometers.
The graphene detector 3 includes graphene film 7, source-drain electrode 8 and top-gated 9, and wherein graphene film 7 is set
In the bottom of top-gated 9, the source electrode and drain electrode of source-drain electrode 8 is respectively arranged on the both sides of top-gated 9.
Its production method, specifically comprises the following steps：
1）First using plasma enhancing 2-3 microns of silica mediums of chemical vapor deposition growth and 450- on single crystal silicon material
550 nano-silicon nitride media, as shown in Figure 1；
2）The photoresist mask pattern of silicon nitride waveguides device is prepared using electron beam lithography developing technique, electron beam adhesive uses
UV135-0.9,900-1100 nanometers of thickness go out silicon nitride light wave using photoresist as mask using sense coupling
Device is led, for the mixed gas of sulfur hexafluoride and oxygen, specific etching condition is the gas used：Sulfur hexafluoride flow is 15-
20sccm, oxygen flow 10-15sccm, air pressure 0.6-1.0pa, etching coil power be 90-120W, RF bias power
For 20-30W, etch period 180-240s, etching depth is the thickness of silicon nitride.N- crassitudes are used after etching successively
Ketone, acetone, ethyl alcohol impregnate and ultrasound, removes remaining photoresist, and rinsed with deionized water and complete waveguide device preparation,
As shown in Figure 2；
3）The photoresist mask pattern of the vertical coupled grating of silicon nitride, electron beam adhesive are prepared using electron beam lithography developing technique
Using UV135-0.9,900-1100 nanometers of thickness goes out vertical coupling using photoresist as mask using sense coupling
Closing light grid, for the mixed gas of sulfur hexafluoride and oxygen, specific etching condition is the gas used：Sulfur hexafluoride flow is 15-
20sccm, oxygen flow 10-15sccm, air pressure 0.6-1.0pa, etching coil power be 90-120W, RF bias power
For 20-30W, etch period 110-150s, etching depth is 280-320 nanometers.After etching successively with N-Methyl pyrrolidone,
Acetone, ethyl alcohol impregnate and ultrasound, removes remaining photoresist, and rinsed with deionized water and complete vertical coupled grating system
It is standby, as shown in Figure 3；
4）Using plasma enhances 2-3 microns of silica mediums of chemical vapor deposition growth, and using chemically mechanical polishing work
Skill is polished chip surface, as shown in Figure 4；
5）Graphene film is shifted to material chip surface using wet method shifting process, uses N- crassitudes after drying successively
Ketone, acetone, ethyl alcohol impregnate the photoresist on removal graphene film surface；
6）The photoresist mask of graphene figure is prepared using plane photoetching developing technique, it is complete to reoxidize removal part graphene
Into the graphical of graphene, as shown in Figure 5；
7）Source-drain electrode figure is prepared using plane photoetching developing technique, evaporates 20 nano-titaniums and 200 nanogold as source and drain
Source-drain electrode is prepared in metal, stripping, as shown in Figure 6；
8）Aluminium oxide is grown as gate medium using ALD, 10 nanometers of thickness prepares grid using electron beam lithography developing technique
Figure, 200 nanogold of evaporation prepare gate electrode as grid metal, stripping, as shown in Figure 7；
9）The medium hole pattern of source-drain electrode is prepared using plane photoetching developing technique, using sense coupling
Medium holes etching is completed, is carried out impregnating removal photoresist completion integrated chip system successively with N-Methyl pyrrolidone, acetone, ethyl alcohol
Standby, chip profile schematic diagram is as shown in Figure 8；The structure of chip is as shown in Figure 9.
Embodiment
A kind of silicon nitride fiber waveguide device and graphene detector integrated chip, structure include silicon nitride vertical coupling optical
Grid 1, silicon nitride fiber waveguide device 2 and graphene detector 3；Wherein the vertical coupled grating of silicon nitride is optical signal input port, even
The A multi-mode interference coupler 6A in silicon nitride fiber waveguide device 2 are met, silicon nitride fiber waveguide device 2 handles optical signal, and
It is connected by the B multi-mode interference couplers 6B in silicon nitride fiber waveguide device 2 and optical signal transmission of inciting somebody to action that treated is to graphene
Detector 3, to treated, optical signal carries out opto-electronic conversion to graphene detector 3.
The vertical coupled grating 1 of the silicon nitride, screen periods are 1.1 microns, duty ratio 50%, and etching depth is
300 nanometers.
The silicon nitride fiber waveguide device 2 includes Mach-Zehnder interferometers 4, micro-ring resonator 5, A multiple-mode interfence couplings
Clutch 6A, B multi-mode interference coupler 6B, wherein Mach-Zehnder interferometers 4 are set between 1 pair of A, B multi-mode interference coupler, micro-
Ring resonator 5 is respectively arranged on the both sides of Mach-Zehnder interferometers 4；Its duct width is 1000 nanometers.
The graphene detector 3 includes graphene film 7, source-drain electrode 8 and top-gated 9, and wherein graphene film 7 is set
In the bottom of top-gated 9, the source electrode and drain electrode of source-drain electrode 8 is respectively arranged on the both sides of top-gated 9.
Its production method, specifically comprises the following steps：
1）First using plasma enhancing 2 microns of silica mediums of chemical vapor deposition growth and 480 are received on single crystal silicon material
Rice silicon nitride medium；
2）The photoresist mask pattern of silicon nitride waveguides device is prepared using electron beam lithography developing technique, electron beam adhesive uses
UV135-0.9,900 nanometers of thickness go out silicon nitride optical waveguide using photoresist as mask using sense coupling
Part, for the mixed gas of sulfur hexafluoride and oxygen, specific etching condition is the gas used：Sulfur hexafluoride flow is 15sccm,
Oxygen flow is 10sccm, air pressure 0.7pa, and etching coil power is 120W, RF bias power 25W, and etch period is
220s, etching depth are the thickness of silicon nitride.It is impregnated and is surpassed with N-Methyl pyrrolidone, acetone, ethyl alcohol successively after etching
Sound removes remaining photoresist, and is rinsed with deionized water and complete waveguide device preparation；
3）The photoresist mask pattern of the vertical coupled grating of silicon nitride, electron beam adhesive are prepared using electron beam lithography developing technique
Using UV135-0.9,900 nanometers of thickness goes out vertical coupling optical using photoresist as mask using sense coupling
Grid, for the mixed gas of sulfur hexafluoride and oxygen, specific etching condition is the gas used：Sulfur hexafluoride flow is 15sccm,
Oxygen flow is 10sccm, air pressure 0.7pa, and etching coil power is 120W, RF bias power 25W, and etch period is
138s, etching depth are 300 nanometers.Impregnate simultaneously ultrasound with N-Methyl pyrrolidone, acetone, ethyl alcohol successively after etching, go
Except remaining photoresist, and rinsed with deionized water and complete vertical coupled grating preparation；
4）Using plasma enhances 3 microns of silica mediums of chemical vapor deposition growth, and using CMP process
Chip surface is polished；
5）Graphene film is shifted to material chip surface using wet method shifting process, uses N- crassitudes after drying successively
Ketone, acetone, ethyl alcohol impregnate the photoresist on removal graphene film surface；
6）The photoresist mask of graphene figure is prepared using plane photoetching developing technique, it is complete to reoxidize removal part graphene
Into the graphical of graphene；
7）Source-drain electrode figure is prepared using plane photoetching developing technique, evaporates 20 nano-titaniums and 200 nanogold as source and drain
Source-drain electrode is prepared in metal, stripping；
8）Aluminium oxide is grown as gate medium using ALD, 10 nanometers of thickness prepares grid using electron beam lithography developing technique
Figure, 200 nanogold of evaporation prepare gate electrode as grid metal, stripping；
9）The medium hole pattern of source-drain electrode is prepared using plane photoetching developing technique, using sense coupling
Medium holes etching is completed, is carried out impregnating removal photoresist completion integrated chip system successively with N-Methyl pyrrolidone, acetone, ethyl alcohol
It is standby.
Claims (8)
1. silicon nitride fiber waveguide device and graphene detector integrated chip, it is characterized in that including the vertical coupled grating of silicon nitride,
Silicon nitride fiber waveguide device and graphene detector；Wherein the vertical coupled grating of silicon nitride is optical signal input port, and connection nitrogenizes
A multi-mode interference couplers in silicon optical waveguide device, silicon nitride fiber waveguide device handles optical signal, and passes through silicon nitride
B multi-mode interference couplers connection graphene detector in fiber waveguide device, silicon nitride fiber waveguide device by treated, believe by light
Number graphene detector is transmitted to by B multi-mode interference couplers, optical signal carries out photoelectricity to graphene detector to treated
Conversion.
2. silicon nitride fiber waveguide device according to claim 1 and graphene detector integrated chip, it is characterized in that described
The vertical coupled grating of silicon nitride, screen periods be 1-1.2 microns, duty ratio 45-55%, etching depth is received for 280-320
Rice.
3. silicon nitride fiber waveguide device according to claim 1 and graphene detector integrated chip, it is characterized in that described
Silicon nitride fiber waveguide device include Mach-Zehnder interferometers, micro-ring resonator, A multi-mode interference couplers and B multiple-mode interfences
Coupler, wherein Mach-Zehnder interferometers are set between A multi-mode interference couplers and B multi-mode interference couplers, micro-ring resonant
Device is respectively arranged on the both sides of Mach-Zehnder interferometers；The duct width of silicon nitride fiber waveguide device is 800-1200 nanometers.
4. silicon nitride fiber waveguide device according to claim 1 and graphene detector integrated chip, it is characterized in that described
Graphene detector include graphene film, source-drain electrode and top-gated, wherein graphene film be set on top-gated bottom, source and drain
The source electrode and drain electrode of electrode is respectively arranged on the both sides of top-gated.
5. the preparation method of silicon nitride fiber waveguide device as described in claim 1 and graphene detector integrated chip, special
Sign is to include the following steps：
1）First in single crystal silicon material growing silicon oxide medium and silicon nitride medium；
2）The photoresist mask pattern of silicon nitride waveguides device is prepared using electron beam lithography developing technique, using inductively
Plasma etching makes fiber waveguide device, removes photoresist mask；
3）The photoresist mask pattern of the vertical coupled grating of silicon nitride is prepared using electron beam lithography developing technique, using sensing
Coupled plasma etch makes vertical coupled grating, removes photoresist mask；
4）Growing silicon oxide medium is polished chip surface using CMP process；
5）Graphene film is shifted to material chip surface, and remove photoresist using wet method shifting process；
6）The photoresist mask of graphene figure is prepared using plane photoetching developing technique, reoxidizes the figure for completing graphene
Change；
7）Source-drain electrode figure is prepared using plane photoetching developing technique, is metallized, and removes and prepares source-drain electrode；
8）A floor height k insulating materials is grown as gate medium, and gate patterns, metal are prepared using electron beam lithography developing technique
Change, and remove and prepare gate electrode；
9）The medium hole pattern of source-drain electrode is prepared using plane photoetching developing technique, using sense coupling
Medium holes etching is completed, removal photoresist is completed integrated chip and prepared.
6. the preparation method of silicon nitride fiber waveguide device as claimed in claim 5 and graphene detector integrated chip, special
Sign is the step 1）Using plasma enhancing chemical vapor deposition grows 2-3 microns of silica mediums and 450-550 successively
Nano-silicon nitride medium.
7. the preparation method of silicon nitride fiber waveguide device as claimed in claim 5 and graphene detector integrated chip, special
Sign is the step 2）With step 3）Electron beam lithography developing technique using UV135-0.9 electron beam positive photoresists, glue thickness 900-
1100 nanometers.
8. the preparation method of silicon nitride fiber waveguide device as claimed in claim 5 and graphene detector integrated chip, special
Sign is the step 2）With step 3）The gas that uses of sense coupling for sulfur hexafluoride and oxygen mixing
Gas, specific etching condition are：Sulfur hexafluoride flow is 15-20sccm, oxygen flow 10-15sccm, air pressure 0.6-
1.0pa, etching coil power are 90-120W, and RF bias power 20-30W, etch period 180-240s pass through control
RF bias power, the lateral etching of air pressure and gas flow control etching and longitudinal etch rate, prepare 80 ° or more
Silicon nitride waveguides angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711434640.3A CN108231803B (en) | 2017-12-26 | 2017-12-26 | Silicon nitride optical waveguide device and graphene detector integrated chip and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711434640.3A CN108231803B (en) | 2017-12-26 | 2017-12-26 | Silicon nitride optical waveguide device and graphene detector integrated chip and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108231803A true CN108231803A (en) | 2018-06-29 |
| CN108231803B CN108231803B (en) | 2020-08-11 |
Family
ID=62648934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711434640.3A Active CN108231803B (en) | 2017-12-26 | 2017-12-26 | Silicon nitride optical waveguide device and graphene detector integrated chip and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108231803B (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119507A (en) * | 2018-09-05 | 2019-01-01 | 南京大学 | A kind of graphene infrared detector preparation method based on integrated circuit technology |
| CN109378707A (en) * | 2018-12-03 | 2019-02-22 | 武汉邮电科学研究院有限公司 | A kind of silicon substrate tunable laser |
| CN109946515A (en) * | 2019-03-04 | 2019-06-28 | 昆明理工大学 | A kind of integrated light guide microwave frequency measurement chip and its system and measurement method |
| CN110535004A (en) * | 2019-09-04 | 2019-12-03 | 金华伏安光电科技有限公司 | Converter and system based on the photon state of graphene to microwave quantum |
| CN110535006A (en) * | 2019-09-06 | 2019-12-03 | 金华伏安光电科技有限公司 | Photon state microwave quantum state converter and system based on microwave coplanar waveguide |
| CN110854017A (en) * | 2019-11-22 | 2020-02-28 | 中国科学院微电子研究所 | Integration method of germanium-based detector |
| CN111276562A (en) * | 2020-02-19 | 2020-06-12 | 上海交通大学 | Photoelectric monolithic integration system based on lithium niobate-silicon nitride wafer |
| CN111446309A (en) * | 2020-03-23 | 2020-07-24 | 中国科学院微电子研究所 | Waveguide integrated photoelectric detector and manufacturing method thereof |
| WO2020181630A1 (en) * | 2019-03-13 | 2020-09-17 | 上海交通大学 | Silicon-based hybrid integrated laser radar chip system |
| CN111739951A (en) * | 2020-06-12 | 2020-10-02 | 中国电子科技集团公司第五十五研究所 | Interdigital buried gate type graphene photoelectric mixer chip and preparation method thereof |
| CN112415653A (en) * | 2020-10-22 | 2021-02-26 | 中国电子科技集团公司第五十五研究所 | Silicon-based optical waveguide and graphene photoelectric mixer integrated chip and preparation method thereof |
| US11616161B2 (en) | 2018-09-28 | 2023-03-28 | Cambridge Enterprise Limited | Photodetector |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5218584A (en) * | 1990-10-30 | 1993-06-08 | International Business Machines Corporation | Integrated optical head structure |
| CN102243340A (en) * | 2011-07-05 | 2011-11-16 | 武汉电信器件有限公司 | Hybrid integrated planar waveguide detector chip based on coarse wave decomposing and multiplexing |
| CN102473844A (en) * | 2009-08-24 | 2012-05-23 | 国际商业机器公司 | Single and few-layer graphene based photodetecting devices |
| CN103076659A (en) * | 2013-01-11 | 2013-05-01 | 武汉邮电科学研究院 | Multicore-fiber optical interconnection structure |
| CN103943715A (en) * | 2014-03-14 | 2014-07-23 | 中国科学院半导体研究所 | Enhanced graphene waveguide photodetector for integrally-distributed Bragg reflection grating |
| CN104795410A (en) * | 2015-04-15 | 2015-07-22 | 重庆大学 | Graphene nanoribbon array terahertz sensor based on optical waveguide |
| EP2924481A1 (en) * | 2014-03-26 | 2015-09-30 | Alcatel Lucent | Monolithically integrated photonic tunable receiver for selecting optical signals with different wavelengths |
| CN106463522A (en) * | 2014-01-14 | 2017-02-22 | 麻省理工学院 | Method of forming an integrated circuit and related integrated circuit |
-
2017
- 2017-12-26 CN CN201711434640.3A patent/CN108231803B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5218584A (en) * | 1990-10-30 | 1993-06-08 | International Business Machines Corporation | Integrated optical head structure |
| CN102473844A (en) * | 2009-08-24 | 2012-05-23 | 国际商业机器公司 | Single and few-layer graphene based photodetecting devices |
| CN102243340A (en) * | 2011-07-05 | 2011-11-16 | 武汉电信器件有限公司 | Hybrid integrated planar waveguide detector chip based on coarse wave decomposing and multiplexing |
| CN103076659A (en) * | 2013-01-11 | 2013-05-01 | 武汉邮电科学研究院 | Multicore-fiber optical interconnection structure |
| CN106463522A (en) * | 2014-01-14 | 2017-02-22 | 麻省理工学院 | Method of forming an integrated circuit and related integrated circuit |
| CN103943715A (en) * | 2014-03-14 | 2014-07-23 | 中国科学院半导体研究所 | Enhanced graphene waveguide photodetector for integrally-distributed Bragg reflection grating |
| EP2924481A1 (en) * | 2014-03-26 | 2015-09-30 | Alcatel Lucent | Monolithically integrated photonic tunable receiver for selecting optical signals with different wavelengths |
| CN104795410A (en) * | 2015-04-15 | 2015-07-22 | 重庆大学 | Graphene nanoribbon array terahertz sensor based on optical waveguide |
Non-Patent Citations (2)
| Title |
|---|
| M. G. BOUDREAU ET AL.: "An Integrated Waveguide Detector for Power Control in an InP Mach-Zehnder Modulator based 10 Gb/s Transmitter", 《2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS》 * |
| 晏崇宇等: "单环和双环微环谐振腔应用于马赫_曾德尔干涉仪滤波器的特性分析", 《光子学报》 * |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119507A (en) * | 2018-09-05 | 2019-01-01 | 南京大学 | A kind of graphene infrared detector preparation method based on integrated circuit technology |
| US11616161B2 (en) | 2018-09-28 | 2023-03-28 | Cambridge Enterprise Limited | Photodetector |
| CN109378707A (en) * | 2018-12-03 | 2019-02-22 | 武汉邮电科学研究院有限公司 | A kind of silicon substrate tunable laser |
| CN109946515A (en) * | 2019-03-04 | 2019-06-28 | 昆明理工大学 | A kind of integrated light guide microwave frequency measurement chip and its system and measurement method |
| CN109946515B (en) * | 2019-03-04 | 2024-02-06 | 昆明理工大学 | Integrated optical waveguide microwave frequency measuring chip, system and measuring method thereof |
| WO2020181630A1 (en) * | 2019-03-13 | 2020-09-17 | 上海交通大学 | Silicon-based hybrid integrated laser radar chip system |
| CN110535004A (en) * | 2019-09-04 | 2019-12-03 | 金华伏安光电科技有限公司 | Converter and system based on the photon state of graphene to microwave quantum |
| CN110535004B (en) * | 2019-09-04 | 2021-01-12 | 广东卓柏信息科技有限公司 | Graphene-based photon state to microwave quantum converter and system |
| CN110535006A (en) * | 2019-09-06 | 2019-12-03 | 金华伏安光电科技有限公司 | Photon state microwave quantum state converter and system based on microwave coplanar waveguide |
| CN110535006B (en) * | 2019-09-06 | 2020-12-22 | 温州市懒代贸易有限公司 | Photon state microwave quantum state converter and system based on microwave coplanar waveguide |
| CN110854017B (en) * | 2019-11-22 | 2022-07-12 | 中国科学院微电子研究所 | Integration method of germanium-based detector |
| CN110854017A (en) * | 2019-11-22 | 2020-02-28 | 中国科学院微电子研究所 | Integration method of germanium-based detector |
| CN111276562A (en) * | 2020-02-19 | 2020-06-12 | 上海交通大学 | Photoelectric monolithic integration system based on lithium niobate-silicon nitride wafer |
| CN111446309A (en) * | 2020-03-23 | 2020-07-24 | 中国科学院微电子研究所 | Waveguide integrated photoelectric detector and manufacturing method thereof |
| CN111446309B (en) * | 2020-03-23 | 2022-04-29 | 中国科学院微电子研究所 | Waveguide integrated photoelectric detector and manufacturing method thereof |
| CN111739951A (en) * | 2020-06-12 | 2020-10-02 | 中国电子科技集团公司第五十五研究所 | Interdigital buried gate type graphene photoelectric mixer chip and preparation method thereof |
| CN111739951B (en) * | 2020-06-12 | 2022-08-16 | 中国电子科技集团公司第五十五研究所 | Interdigital buried gate type graphene photoelectric mixer chip and preparation method thereof |
| CN112415653A (en) * | 2020-10-22 | 2021-02-26 | 中国电子科技集团公司第五十五研究所 | Silicon-based optical waveguide and graphene photoelectric mixer integrated chip and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108231803B (en) | 2020-08-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108231803A (en) | Silicon nitride fiber waveguide device and graphene detector integrated chip and preparation method thereof | |
| CN106199836B (en) | A kind of bandwidth tunable filter based on silica-based waveguides grating | |
| CN111736370A (en) | Thin-film lithium niobate-based integrated chip and preparation method thereof | |
| CN108646346A (en) | A kind of narrow band filter based on phase-modulation apodization grating | |
| CN111175999B (en) | High-speed low-voltage electro-optical modulator based on lithium niobate-silicon wafer | |
| US20110194803A1 (en) | Optical modulator formed on bulk-silicon substrate | |
| CN102323646B (en) | Grating coupler and preparation method thereof | |
| KR20130031598A (en) | Optical waveguide | |
| CN104977733B (en) | Silicon-based nonreciprocal device structure and electric control nonreciprocal implementation method | |
| US20210018597A1 (en) | Phased array lidar transmitting chip of mixed materials, manufacturing method thereof, and lidar device | |
| CN112415653A (en) | Silicon-based optical waveguide and graphene photoelectric mixer integrated chip and preparation method thereof | |
| CN105785602A (en) | Silicon-based micro-ring optical router based on graphene | |
| JP2016161890A (en) | Optical device | |
| CN107765366A (en) | A kind of silicon nitride polarization beam apparatus of asymmetrical shape and preparation method thereof | |
| CN107976738A (en) | Wavelength-division mould based on photonic crystal and Nanowire Waveguides divides hybrid multiplex device | |
| CN111739951B (en) | Interdigital buried gate type graphene photoelectric mixer chip and preparation method thereof | |
| KR20070092059A (en) | Optic modulator using a microring resonator and method of manufacturing the same | |
| CN110149153B (en) | Optical modulator, modulation method and optical modulation system | |
| US20210141063A1 (en) | Phased array lidar transmitting chip of multi-layer materials, manufacturing method thereof, and lidar device | |
| US9618709B2 (en) | Hybrid integration of edge-coupled chips | |
| JP2007052393A (en) | Integrated optical modulator and method for manufacturing the same | |
| US9978676B2 (en) | Sub-terahertz/terahertz interconnect | |
| CN112363272A (en) | Tunable three-dimensional silicon nitride double-micro-ring resonant filter device and preparation method thereof | |
| CN215180992U (en) | Optical mixer | |
| CN106680935A (en) | High-efficiency coupling structure among silicon-based optical waveguides and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |