CN108231803B - Silicon nitride optical waveguide device and graphene detector integrated chip and manufacturing method thereof - Google Patents
Silicon nitride optical waveguide device and graphene detector integrated chip and manufacturing method thereof Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
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- G—PHYSICS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12138—Sensor
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12176—Etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention relates to a silicon nitride optical waveguide device and graphene detector integrated chip and a manufacturing method thereof, wherein the structure comprises a silicon nitride vertical coupling grating, a silicon nitride optical waveguide device and a graphene detector; wherein the silicon nitride vertical coupling grating is an optical signal input port and is connected with the silicon nitride optical waveguide device; the silicon nitride optical waveguide device processes optical signals, connects and transmits the processed optical signals to the graphene detector, and the graphene detector performs photoelectric conversion on the processed optical signals. The advantages are that: 1) various reconfigurable optical signal processing functions can be realized by designing silicon nitride optical waveguide devices with different structures; 2) compared with the traditional indium phosphide-based detector, the graphene detector has wider light absorption wavelength range and wider electrical bandwidth; 3) the device has simple structure, and can realize the optical signal processing functional unit and the chip integrated on the chip by a single chip.
Description
Technical Field
The invention relates to a silicon nitride optical waveguide device and graphene detector integrated chip and a manufacturing method thereof, belonging to the technical field of integrated microwave optical signal processing.
Background
The photon technology has the outstanding advantages of large bandwidth, low transmission loss, electromagnetic interference resistance, tunability and the like, and the microwave photon technology is generated by fusing and crossing the photon technology and the radio frequency microwave technology. By modulating radio frequency microwave signals on laser, the functions of signal generation, modulation, processing, long-distance low-loss transmission and the like can be realized on the optical frequency, and the method is a key technology for leading future communication industries and military fields such as radars, electronic warfare and the like. As one of the research hotspots, microwave photon signal processing has realized numerous photon signal processing functions, such as optical filtering, optical switching, optical delay, differentiation, integration, hilbert transform, and the like. In addition, as a receiving end of a microwave photonic communication link, microwave filtering and photoelectric conversion functions are generally required to be realized. The optical waveguide device has the advantages of small size, reconfigurability and easiness in integration, and is directly manufactured by adopting a mature microelectronic CMOS (complementary metal oxide semiconductor) process, or is manufactured by growing and bonding heterogeneous materials such as indium phosphide and the like on a silicon-based material to manufacture a microwave optoelectronic integrated device. The microwave radio frequency integrated circuit organically integrates the fine signal processing capability of the microwave technology and the high-speed broadband signal processing capability of the photon technology on the scale of a chip, can effectively solve the technical problem of the traditional microwave radio frequency, and provides a subversive solution with miniaturization, low power consumption, high reliability and low cost for improving the performance of modern electronic information equipment.
At present, the integration of an indium phosphide detector and a silicon-based optical waveguide device is reported and is realized by adopting a heterogeneous transfer integration technology, but the indium phosphide detector has a complex material structure, a narrow working wavelength range, high cost, more device process steps and extremely high requirements on a heterogeneous integration process, and the realization and application prospect of the integrated chip is limited.
Disclosure of Invention
The invention provides a silicon nitride optical waveguide device and graphene detector integrated chip and a manufacturing method thereof, aiming at solving the problems of high process difficulty and high cost of the existing indium phosphide detector and silicon-based optical waveguide device integrated chip, and providing a mode of integrating a graphene detector and a silicon nitride-based optical waveguide device, wherein the silicon nitride optical waveguide device processes optical signals, and the graphene detector performs photoelectric conversion on the processed optical signals, so that a monolithic integrated optical signal processing functional unit and chip are realized.
The technical solution of the invention is as follows: the structure of the silicon nitride optical waveguide device and graphene detector integrated chip comprises a silicon nitride vertical coupling grating 1, a silicon nitride optical waveguide device 2 and a graphene detector 3; the silicon nitride vertical coupling grating is an optical signal input port and is connected with an A multi-mode interference coupler 6 in the silicon nitride optical waveguide device 2, the silicon nitride optical waveguide device 2 processes an optical signal, the optical signal is connected through a B multi-mode interference coupler 6 in the silicon nitride optical waveguide device 2 and is transmitted to the graphene detector 3, and the graphene detector 3 performs photoelectric conversion on the processed optical signal.
The manufacturing method comprises the following steps:
1) firstly, growing a silicon oxide medium and a silicon nitride medium on a monocrystalline silicon material;
2) preparing a photoresist mask pattern of the silicon nitride waveguide device by adopting an electron beam lithography development technology, manufacturing the optical waveguide device by adopting inductive coupling plasma etching, and removing the photoresist mask;
3) preparing a photoresist mask pattern of the silicon nitride vertical coupling grating by adopting an electron beam lithography development technology, manufacturing the vertical coupling grating by adopting inductive coupling plasma etching, and removing the photoresist mask;
4) growing a silicon oxide medium, and polishing the surface of the chip by adopting a chemical mechanical polishing process;
5) transferring the graphene film to the surface of the material chip by adopting a wet transfer process, and removing the photoresist;
6) preparing a photoresist mask of a graphene pattern by adopting a planar photoetching development technology, and oxidizing to complete the patterning of the graphene;
7) preparing a source and drain electrode pattern by adopting a plane photoetching development technology, metalizing, and stripping to prepare a source and drain electrode;
8) growing a layer of high-k insulating material as a gate medium, preparing a gate pattern by adopting an electron beam lithography development technology, metalizing and stripping to prepare a gate electrode;
9) and preparing a dielectric hole pattern of the source electrode and the drain electrode by adopting a plane photoetching development technology, finishing dielectric hole etching by adopting inductive coupling plasma etching, and removing photoresist to finish the manufacture of the integrated chip.
The invention has the advantages that:
1) various reconfigurable optical signal processing functions can be realized by designing silicon nitride optical waveguide devices with different structures;
2) compared with the traditional indium phosphide-based detector, the graphene detector has wider light absorption wavelength range and wider electrical bandwidth;
3) the device has simple structure, and can realize the optical signal processing functional unit and the chip integrated on the chip by a single chip.
Drawings
FIG. 1 is a schematic illustration of a chip material growth;
FIG. 2 is a schematic diagram of a silicon nitride optical waveguide device fabrication;
FIG. 3 is a schematic diagram of a silicon nitride vertical coupling grating fabrication;
FIG. 4 is a schematic illustration of growing a silicon oxide cap layer and chemical mechanical polishing;
FIG. 5 is a schematic view of graphene transfer and patterning;
FIG. 6 is a schematic diagram of source and drain electrode preparation;
FIG. 7 is a schematic illustration of gate dielectric growth and gate electrode preparation;
FIG. 8 is a schematic cross-sectional view of an integrated chip upon completion of fabrication;
fig. 9 is a schematic structural diagram of a silicon nitride optical waveguide device and a graphene detector integrated chip.
In the figure, 1 is a silicon nitride vertical coupling grating, 2 is a silicon nitride optical waveguide device, 3 is a graphene detector, 4 is a Mach-Zehnder interferometer, 5 is a micro-ring resonator, 6A is an A multi-mode interference coupler, 6B is a B multi-mode interference coupler, 7 is a graphene film, 8 is a source-drain electrode, and 9 is a top grating.
Detailed Description
As shown in fig. 9, the silicon nitride optical waveguide device and graphene detector integrated chip structurally includes a silicon nitride vertical coupling grating 1, a silicon nitride optical waveguide device 2, and a graphene detector 3; the silicon nitride vertical coupling grating is an optical signal input port and is connected with an A multi-mode interference coupler 6A in the silicon nitride optical waveguide device 2, the silicon nitride optical waveguide device 2 processes an optical signal and is connected with the graphene detector 3 through a B multi-mode interference coupler 6B in the silicon nitride optical waveguide device 2, the silicon nitride optical waveguide device 2 transmits the processed optical signal to the graphene detector 3 through the B multi-mode interference coupler 6B, and the graphene detector 3 performs photoelectric conversion on the processed optical signal.
The grating period of the silicon nitride vertical coupling grating 1 is 1-1.2 microns, the duty ratio is 45-55%, and the etching depth is 280-320 nm.
The silicon nitride optical waveguide device 2 comprises a Mach-Zehnder interferometer 4, a micro-ring resonator 5 and an A multi-mode interference coupler 6A, B multi-mode interference coupler 6B, wherein the Mach-Zehnder interferometer 4 is arranged between the A, B multi-mode interference couplers 6, and the micro-ring resonator 5 is respectively arranged at two sides of the Mach-Zehnder interferometer 4; the waveguide width is 800-1200 nm.
The graphene detector 3 comprises a graphene film 7, a source/drain electrode 8 and a top gate 9, wherein the graphene film 7 is arranged at the bottom of the top gate 9, and the source and drain electrodes of the source/drain electrode 8 are respectively arranged at two sides of the top gate 9.
The manufacturing method specifically comprises the following steps:
1) firstly, growing a 2-3 micron silicon oxide medium and a 450-550 nanometer silicon nitride medium on a single crystal silicon material by adopting plasma enhanced chemical vapor deposition, as shown in figure 1;
2) preparing a photoresist mask pattern of the silicon nitride waveguide device by adopting an electron beam lithography development technology, wherein the electron beam photoresist adopts UV135-0.9 and is 900-1100 nanometers thick, the photoresist is taken as a mask, the silicon nitride optical waveguide device is etched by adopting inductive coupling plasma, the adopted gas is mixed gas of sulfur hexafluoride and oxygen, and the specific etching conditions are as follows: the flow rate of sulfur hexafluoride is 15-20sccm, the flow rate of oxygen is 10-15sccm, the gas pressure is 0.6-1.0pa, the power of the etching coil is 90-120W, the radio frequency bias power is 20-30W, the etching time is 180-240s, and the etching depth is the thickness of silicon nitride. After etching, sequentially soaking and ultrasonically treating the substrate by using N-methyl pyrrolidone, acetone and ethanol to remove the residual photoresist, and washing the substrate by using deionized water to finish the preparation of the waveguide device, as shown in figure 2;
3) preparing a photoresist mask pattern of the silicon nitride vertical coupling grating by adopting an electron beam lithography development technology, wherein the electron beam photoresist adopts UV135-0.9 and is 900-1100 nanometers thick, the photoresist is used as a mask, the vertical coupling grating is etched by adopting inductive coupling plasma, the adopted gas is mixed gas of sulfur hexafluoride and oxygen, and the specific etching conditions are as follows: the flow rate of sulfur hexafluoride is 15-20sccm, the flow rate of oxygen is 10-15sccm, the gas pressure is 0.6-1.0pa, the power of the etching coil is 90-120W, the radio frequency bias power is 20-30W, the etching time is 110-150s, and the etching depth is 280-320 nm. After etching, sequentially soaking and ultrasonically treating the substrate by using N-methyl pyrrolidone, acetone and ethanol to remove the residual photoresist, and washing the substrate by using deionized water to finish the preparation of the vertical coupling grating, as shown in figure 3;
4) growing a 2-3 micron silicon oxide medium by adopting plasma enhanced chemical vapor deposition, and polishing the surface of the chip by adopting a chemical mechanical polishing process, as shown in FIG. 4;
5) transferring the graphene film to the surface of a material chip by adopting a wet transfer process, drying, and then sequentially soaking with N-methyl pyrrolidone, acetone and ethanol to remove the photoresist on the surface of the graphene film;
6) preparing a photoresist mask of a graphene pattern by adopting a planar photoetching development technology, and oxidizing and removing part of graphene to complete the patterning of the graphene, as shown in fig. 5;
7) preparing a source and drain electrode pattern by adopting a planar photoetching development technology, evaporating 20 nm titanium and 200 nm gold as source and drain metals, and stripping to prepare a source and drain electrode, as shown in FIG. 6;
8) growing aluminum oxide by ALD (atomic layer deposition) to be used as a gate dielectric with the thickness of 10 nanometers, preparing a gate electrode pattern by adopting an electron beam lithography development technology, evaporating 200 nanometers of gold to be used as gate metal, and stripping to prepare a gate electrode, as shown in FIG. 7;
9) preparing a dielectric hole pattern of a source electrode and a drain electrode by adopting a planar photoetching development technology, finishing dielectric hole etching by adopting inductive coupling plasma etching, and sequentially soaking by using N-methyl pyrrolidone, acetone and ethanol to remove photoresist to finish the preparation of an integrated chip, wherein the schematic section view of the chip is shown in FIG. 8; the structure of the chip is shown in fig. 9.
Examples
A silicon nitride optical waveguide device and graphene detector integrated chip structurally comprises a silicon nitride vertical coupling grating 1, a silicon nitride optical waveguide device 2 and a graphene detector 3; the silicon nitride vertical coupling grating is an optical signal input port and is connected with an A multimode interference coupler 6A in the silicon nitride optical waveguide device 2, the silicon nitride optical waveguide device 2 processes optical signals, the optical signals are connected through a B multimode interference coupler 6B in the silicon nitride optical waveguide device 2 and are transmitted to the graphene detector 3, and the graphene detector 3 performs photoelectric conversion on the processed optical signals.
The silicon nitride vertical coupling grating 1 has a grating period of 1.1 microns, a duty ratio of 50% and an etching depth of 300 nanometers.
The silicon nitride optical waveguide device 2 comprises a Mach-Zehnder interferometer 4, a micro-ring resonator 5 and an A multi-mode interference coupler 6A, B multi-mode interference coupler 6B, wherein the Mach-Zehnder interferometer 4 is arranged between 1 pair of A, B multi-mode interference couplers, and the micro-ring resonator 5 is respectively arranged at two sides of the Mach-Zehnder interferometer 4; the waveguide width was 1000 nm.
The graphene detector 3 comprises a graphene film 7, a source/drain electrode 8 and a top gate 9, wherein the graphene film 7 is arranged at the bottom of the top gate 9, and the source and drain electrodes of the source/drain electrode 8 are respectively arranged at two sides of the top gate 9.
The manufacturing method specifically comprises the following steps:
1) firstly, growing a 2 micron silicon oxide medium and a 480 nanometer silicon nitride medium on a single crystal silicon material by adopting plasma enhanced chemical vapor deposition;
2) preparing a photoresist mask pattern of the silicon nitride waveguide device by adopting an electron beam lithography development technology, wherein the electron beam photoresist adopts UV135-0.9 and is 900 nanometers thick, the silicon nitride waveguide device is etched by adopting the photoresist as a mask and adopting inductive coupling plasma, the adopted gas is mixed gas of sulfur hexafluoride and oxygen, and the specific etching conditions are as follows: the flow of sulfur hexafluoride is 15sccm, the flow of oxygen is 10sccm, the gas pressure is 0.7pa, the power of an etching coil is 120W, the radio frequency bias power is 25W, the etching time is 220s, and the etching depth is the thickness of silicon nitride. After etching, sequentially soaking and ultrasonically treating the wafer by using N-methyl pyrrolidone, acetone and ethanol to remove the residual photoresist, and washing the wafer by using deionized water to finish the preparation of the waveguide device;
3) preparing a photoresist mask pattern of the silicon nitride vertical coupling grating by adopting an electron beam lithography development technology, wherein the electron beam photoresist adopts UV135-0.9 and is 900 nanometers thick, the photoresist is used as a mask, the vertical coupling grating is etched by adopting inductive coupling plasma, the adopted gas is mixed gas of sulfur hexafluoride and oxygen, and the specific etching conditions are as follows: the flow of sulfur hexafluoride is 15sccm, the flow of oxygen is 10sccm, the gas pressure is 0.7pa, the power of an etching coil is 120W, the radio frequency bias power is 25W, the etching time is 138s, and the etching depth is 300 nanometers. After etching, sequentially soaking and ultrasonically treating the substrate by using N-methyl pyrrolidone, acetone and ethanol to remove the residual photoresist, and washing the substrate by using deionized water to finish the preparation of the vertical coupling grating;
4) growing a 3 micron silicon oxide medium by adopting plasma enhanced chemical vapor deposition, and polishing the surface of the chip by adopting a chemical mechanical polishing process;
5) transferring the graphene film to the surface of a material chip by adopting a wet transfer process, drying, and then sequentially soaking with N-methyl pyrrolidone, acetone and ethanol to remove the photoresist on the surface of the graphene film;
6) preparing a photoresist mask of a graphene pattern by adopting a planar photoetching development technology, and oxidizing to remove part of graphene to complete the patterning of the graphene;
7) preparing a source and drain electrode pattern by adopting a planar photoetching development technology, evaporating 20 nm titanium and 200 nm gold as source and drain metals, and stripping to prepare a source and drain electrode;
8) adopting ALD (atomic layer deposition) grown alumina as a gate dielectric with the thickness of 10 nanometers, adopting an electron beam lithography development technology to prepare a gate electrode pattern, evaporating 200 nanometers of gold as gate metal, and stripping to prepare a gate electrode;
9) and preparing a dielectric hole pattern of the source and drain electrodes by adopting a planar photoetching development technology, finishing dielectric hole etching by adopting inductive coupling plasma etching, and soaking by sequentially using N-methyl pyrrolidone, acetone and ethanol to remove photoresist to finish the preparation of the integrated chip.
Claims (7)
1. The preparation method of the silicon nitride optical waveguide device and the graphene detector integrated chip comprises a silicon nitride vertical coupling grating, a silicon nitride optical waveguide device and a graphene detector; the silicon nitride vertical coupling grating is an optical signal input port and is connected with an A multi-mode interference coupler in a silicon nitride optical waveguide device, the silicon nitride optical waveguide device processes an optical signal and is connected with a graphene detector through a B multi-mode interference coupler in the silicon nitride optical waveguide device, the silicon nitride optical waveguide device transmits the processed optical signal to the graphene detector through the B multi-mode interference coupler, and the graphene detector performs photoelectric conversion on the processed optical signal; is characterized in that the preparation method comprises the following steps:
1) firstly, growing a silicon oxide medium and a silicon nitride medium on a monocrystalline silicon material;
2) preparing a photoresist mask pattern of the silicon nitride waveguide device by adopting an electron beam lithography development technology, manufacturing the optical waveguide device by adopting inductive coupling plasma etching, and removing the photoresist mask;
3) preparing a photoresist mask pattern of the silicon nitride vertical coupling grating by adopting an electron beam lithography development technology, manufacturing the vertical coupling grating by adopting inductive coupling plasma etching, and removing the photoresist mask;
4) growing a silicon oxide medium, and polishing the surface of the chip by adopting a chemical mechanical polishing process;
5) transferring the graphene film to the surface of the material chip by adopting a wet transfer process, and removing the photoresist;
6) preparing a photoresist mask of a graphene pattern by adopting a planar photoetching development technology, and oxidizing to complete the patterning of the graphene;
7) preparing a source and drain electrode pattern by adopting a plane photoetching development technology, metalizing, and stripping to prepare a source and drain electrode;
8) growing a layer of high-k insulating material as a gate medium, preparing a gate pattern by adopting an electron beam lithography development technology, metalizing and stripping to prepare a gate electrode;
9) and preparing a dielectric hole pattern of the source electrode and the drain electrode by adopting a plane photoetching development technology, finishing dielectric hole etching by adopting inductive coupling plasma etching, and removing photoresist to finish the preparation of the integrated chip.
2. The method as claimed in claim 1, wherein the grating period of the silicon nitride vertical coupling grating is 1-1.2 μm, the duty ratio is 45-55%, and the etching depth is 280-320 nm.
3. The method according to claim 1, wherein the silicon nitride optical waveguide device comprises a mach-zehnder interferometer, a micro-ring resonator, an a multi-mode interference coupler and a B multi-mode interference coupler, wherein the mach-zehnder interferometer is arranged between the a multi-mode interference coupler and the B multi-mode interference coupler, and the micro-ring resonators are respectively arranged on two sides of the mach-zehnder interferometer; the waveguide width of the silicon nitride optical waveguide device is 800-1200 nm.
4. The method according to claim 1, wherein the graphene detector comprises a graphene film, a source/drain electrode and a top gate, wherein the graphene film is disposed at the bottom of the top gate, and the source and drain electrodes are respectively disposed at two sides of the top gate.
5. The method as claimed in claim 1, wherein the step 1) comprises growing 2-3 μm silicon oxide medium and 450-550 nm silicon nitride medium by plasma enhanced chemical vapor deposition.
6. The method as claimed in claim 1, wherein the electron beam lithography development technique of steps 2) and 3) employs UV135-0.9 electron beam positive resist with a thickness of 900-1100 nm.
7. The method for preparing the silicon nitride optical waveguide device and graphene detector integrated chip according to claim 1, wherein the gas adopted by the inductively coupled plasma etching in the steps 2) and 3) is a mixed gas of sulfur hexafluoride and oxygen, and the specific etching conditions are as follows: the flow of sulfur hexafluoride is 15-20sccm, the flow of oxygen is 10-15sccm, the gas pressure is 0.6-1.0pa, the power of an etching coil is 90-120W, the radio frequency bias power is 20-30W, the etching time is 180-240s, and the silicon nitride waveguide angle of more than 80 degrees is prepared by controlling the radio frequency bias power, the gas pressure and the transverse etching and longitudinal etching rates of gas flow control etching.
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| CN201711434640.3A CN108231803B (en) | 2017-12-26 | 2017-12-26 | Silicon nitride optical waveguide device and graphene detector integrated chip and manufacturing method thereof |
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| CN111739951B (en) * | 2020-06-12 | 2022-08-16 | 中国电子科技集团公司第五十五研究所 | Interdigital buried gate type graphene photoelectric mixer chip and preparation method thereof |
| CN112415653A (en) * | 2020-10-22 | 2021-02-26 | 中国电子科技集团公司第五十五研究所 | Silicon-based optical waveguide and graphene photoelectric mixer integrated chip and preparation method thereof |
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