CN111061072A - Photoelectric device based on lithium niobate thin film and preparation method thereof - Google Patents
Photoelectric device based on lithium niobate thin film and preparation method thereof Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
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Abstract
The application provides a preparation method of a photoelectric device based on a lithium niobate thin film, which comprises the following steps: coating and etching a pattern transfer layer on the lithium niobate thin film; photoetching and developing the transfer layer in the etched pattern to obtain a pattern of the waveguide to be manufactured; and continuously etching to etch the waveguide pattern on the lithium niobate thin film. The photoelectric device prepared by the preparation method has the advantages of good optical transmission consistency, low loss and high integration level. The application also provides a photoelectric device based on the lithium niobate thin film.
Description
Technical Field
The application relates to the technical field of preparation of components based on lithium niobate films, in particular to a photoelectric device based on a lithium niobate film and a preparation method thereof.
Background
Lithium niobate is called optical silicon, is a very important crystal material, and has a large number of market applications in the fields of electro-optical modulation, nonlinear optics, surface acoustic waves, filtering and the like. Meanwhile, the material has more internal defects and vacancies, and the material is easily modified by doping other particles, and the physical parameters of the material are corrected, so that the application range of the material is widened. However, lithium niobate crystals have two limitations in application: firstly, a lithium niobate thin film with the same property as bulk single crystal is difficult to grow; and secondly, the lithium niobate crystal is very difficult to etch. Therefore, the manufacturing method of the waveguide in the lithium niobate electro-optical modulator in the current market is basically based on the traditional Ti diffusion technology or the proton exchange annealing technology. The difference between the refractive index of the lithium niobate waveguide obtained by the method and the refractive index of the surrounding medium is not more than 0.02, the light wave transmitted in the lithium niobate waveguide is weakly bound, and the transmission loss of the light is relatively large. Meanwhile, the width of the waveguide obtained by the method is generally about 10 μm, the size of the device is large, the integration level is not high, and the material performance advantage cannot be fully exerted.
Disclosure of Invention
The technical problem to be solved by the application is to provide a preparation method of a photoelectric device based on a lithium niobate thin film, and the photoelectric device prepared by the preparation method has the advantages of good optical transmission consistency, low loss and high integration level. Another technical problem to be solved in the present application is to provide a lithium niobate thin film based photovoltaic device.
In order to solve the above technical problem, a first aspect of the present application provides a method for manufacturing a photovoltaic device based on a lithium niobate thin film, including the following steps:
coating and etching a pattern transfer layer on the lithium niobate thin film;
photoetching and developing the transfer layer in the etched pattern to obtain a pattern of the waveguide to be manufactured;
and continuously etching to etch the waveguide pattern on the lithium niobate thin film.
Alternatively to this, the first and second parts may,
the coating and etching pattern transfer layer on the lithium niobate film comprises:
and coating photoresist on the lithium niobate thin film.
Alternatively to this, the first and second parts may,
before coating photoresist on the lithium niobate thin film, the method also comprises
And depositing a layer of amorphous silicon on the lithium niobate thin film.
Alternatively to this, the first and second parts may,
the step of photoetching and developing the transfer layer in the etched pattern to obtain the pattern of the waveguide to be manufactured comprises
Exposing a waveguide pattern to be prepared on photoresist by using a photoetching machine, and carrying out chemical reaction on an illuminated area of the photoresist;
the material in the chemically reacted areas is then removed with a developer to obtain the pattern of the waveguide to be fabricated.
Alternatively to this, the first and second parts may,
and continuously etching the waveguide pattern on the lithium niobate thin film, wherein the step of continuously etching comprises the following steps:
continuing etching to transfer the pattern of the photoresist to the silicon surface in the etching process; and then, continuously etching by using the silicon as a mask to etch the pattern of the waveguide on the lithium niobate thin film.
Alternatively to this, the first and second parts may,
after the lithium niobate thin film is etched to form the pattern of the waveguide, the method further comprises the following steps:
and removing the residual photoresist and amorphous silicon to obtain the waveguide structure.
Alternatively to this, the first and second parts may,
before coating and etching the pattern transfer layer on the lithium niobate thin film,
and arranging a layer of silicon dioxide on the substrate of the lithium niobate thin film.
Alternatively to this, the first and second parts may,
and after the waveguide structure is obtained, deburring the side wall of the waveguide structure.
Alternatively to this, the first and second parts may,
the deburring method is thermal annealing or caustic agent rinsing.
In order to solve the above-mentioned problems, a second aspect of the present invention provides a photovoltaic device based on a lithium niobate thin film, which is manufactured by the manufacturing method according to any one of the above-mentioned methods, and includes a lithium niobate base portion and a waveguide structure provided on the base portion.
In the application, a method for preparing a photoelectric device based on a lithium niobate thin film comprises the following steps:
coating and etching a pattern transfer layer on the lithium niobate thin film;
photoetching and developing the transfer layer in the etched pattern to obtain a pattern of the waveguide to be manufactured;
and continuously etching to etch the waveguide pattern on the lithium niobate thin film.
The method provided by the application is characterized in that a waveguide is manufactured on a lithium niobate thin film through an etching process, the difference between the refractive index of the waveguide and the refractive index of a surrounding medium (such as SiO 2) can reach 0.7, the waveguide is tightly bound, the consistency of light during transmission is good, the loss is low, and the size of the waveguide can be similar to that of a silicon optical waveguide and is in the order of 0.4-0.6 mu m. The device obtained by the method has higher integration level, when the device is used as an electro-optical modulator, the distance between electrodes can be closer, and the efficiency of electro-optical response can be higher. In addition, the photoelectric integrated device manufactured by the method has lower power consumption and larger bandwidth, and can be applied in more fields.
Drawings
FIG. 1 is a logic flow diagram illustrating a method for fabricating a lithium niobate thin film based optoelectronic device in accordance with an exemplary embodiment of the present application;
FIG. 2 is a schematic structural diagram of each stage of etching of the lithium niobate thin film corresponding to each step in FIG. 1;
FIG. 3 is a comparison of a photovoltaic device made by the fabrication method of the present application with a photovoltaic device made by a conventional method;
FIG. 4 is a graph showing refractive index change curves of a photovoltaic device manufactured by a conventional method;
FIG. 5 is a graph showing refractive index change curves of a photovoltaic device fabricated by a fabrication method of the present application;
FIG. 6 is a schematic structural diagram of a waveguide coupler fabricated using a lithium niobate thin film waveguide according to an embodiment of the present application;
FIG. 7 is a schematic structural diagram of several ring resonators fabricated using lithium niobate thin film waveguides in the embodiments of the present application;
FIG. 8 is a schematic structural diagram of a Y-junction beam splitter fabricated using a lithium niobate thin film waveguide in an embodiment of the present application;
fig. 9 is a schematic structural diagram of an electro-optical modulator manufactured by using a lithium niobate thin film waveguide in the embodiment of the present application.
Detailed Description
Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following examples do not represent all embodiments consistent with the present application. But merely as exemplifications of systems and methods consistent with certain aspects of the application, as recited in the claims.
In an embodiment of the present application, as shown in fig. 1 and fig. 2, fig. 1 is a logic flow chart of a method for manufacturing a photovoltaic device based on a lithium niobate thin film according to an exemplary embodiment of the present application, and fig. 2 is a schematic structural diagram of each stage of lithium niobate thin film etching corresponding to each step in fig. 1.
Step S101, firstly, depositing a layer of amorphous silicon on the cleaned lithium niobate thin film sample, and then coating photoresist.
It is to be noted that amorphous silicon and photoresist, which may be referred to herein as an etch pattern transfer layer prior to etching, are used. Those skilled in the art will readily appreciate that the materials that can be used to transfer the etch pattern are not limited to amorphous silicon and photoresist, and that other materials that can transfer the etch pattern are within the scope of the present application.
A sample of the raw lithium niobate thin film was selected as shown in stage a of fig. 2.
The lithium niobate thin film after processing obtained at this time is, as shown in stage b in fig. 2, amorphous silicon forms the silicon layer 102 and the photoresist forms the photoresist layer 103 in stage b.
And step S102, photoetching and developing to obtain a waveguide pattern to be manufactured.
Specifically, the specific process of the step is as follows: exposing a waveguide pattern to be prepared on photoresist by using a photoetching machine, and carrying out chemical reaction on an illuminated area of the photoresist; the material in the chemically reacted areas is then removed with a developer to obtain the pattern of the waveguide to be fabricated.
The processed lithium niobate thin film obtained at this time is processed in the c stage in fig. 2, as shown in the c stage, and the photoresist layer 103 is processed.
And step S103, continuing etching to etch the waveguide pattern on the lithium niobate thin film. Specifically, as shown in fig. 1, the etching is continued, so that the pattern of the photoresist is transferred to the silicon surface during the etching process; and then, continuously etching by using the silicon as a mask to etch the waveguide pattern on the lithium niobate film.
The processed lithium niobate thin film obtained at this time is processed to a silicon layer 102 level lithium niobate thin film in a stage d as shown in a stage d in fig. 2.
Step S104, removing the residual photoresist and amorphous silicon to obtain the waveguide structure 101.
As shown in fig. 2, at stage e, the processed lithium niobate thin film obtained at this time is cleaned off the silicon layer 102 and the photoresist layer 103, and the waveguide structure 101 formed of the lithium niobate thin film is obtained.
In the above embodiments, the sidewalls of the resulting waveguide structure 101 have some stress fluctuations of the burrs that cause large losses of light traveling therein. To reduce this optical loss, post-processing methods are required to remove these spike stress fluctuations, such as thermal annealing, or rinsing with an etchant.
Further, before coating the etching pattern transfer layer on the lithium niobate thin film, a silicon oxide layer 104 is formed by providing a layer of silicon oxide on the substrate of the lithium niobate thin film. Specifically, as shown in the stage a in FIG. 2, a layer of SiO2 of 2 μm was formed on the lithium niobate substrate, and a lithium niobate single crystal thin film of 300nm to 900nm in thickness was formed on the top.
Then, what is the comparison between the waveguide structure 101 manufactured by the manufacturing method of the present application and the waveguide structure 101 manufactured by the conventional method is shown in fig. 3, and fig. 3 is a comparison between the optoelectronic device manufactured by the manufacturing method of the present application and the optoelectronic device manufactured by the conventional method.
As shown in the left diagram of fig. 3, the waveguide in the conventional lithium niobate optoelectronic integrated device is based on Ti diffusion technology or proton exchange annealing technology. The difference between the refractive index of the lithium niobate waveguide obtained by the method and the refractive index of the surrounding medium is not more than 0.02, the light wave transmitted in the lithium niobate waveguide is weakly bound, and the loss ratio of light transmission is large; meanwhile, the size of the waveguide is generally in the order of 10 μm, the integration level is not high, and for some applications, such as an electro-optical modulator, the efficiency of the electro-optical response is low, which is unfavorable for realizing ultra-high-speed electro-optical modulation (> 100 GHz).
Specifically, as shown in fig. 3, the photovoltaic device based on a lithium niobate thin film provided by the present application includes a lithium niobate base body portion 1 and a waveguide structure 101 provided on the base body portion. In particular, the coverage of the base body portion 1 includes the whole under the waveguide structure 101, including the substrate and other parts. It should be noted that the substrate may be lithium niobate, silicon, or silicon dioxide, which is not limited in this application, and thus any substrate material is within the scope of the present application.
As shown in the right graph of fig. 3, if the waveguide structure 101 manufactured by the method provided by the present application is used, since the refractive index distribution inside the waveguide structure 101 is uniform, the uniformity of light transmitted therein is better, and the inter-electrode distance can be made closer, the electro-optic response is more efficient, and the modulation rate has a congenital advantage compared with a diffusion waveguide. In addition, the device has larger bandwidth and lower power consumption, the modulation voltage can reach the magnitude of 1-2V, the device can be completely compatible with the CMOS technology, and the programming control is favorably realized.
Then, the refractive index of the waveguide structure 101 manufactured by the two methods is compared, and particularly, reference is made to fig. 4 and 5, and fig. 4 is a graph showing the refractive index variation of an optoelectronic device manufactured by a conventional method; fig. 5 is a graph showing a change in refractive index of a photovoltaic device manufactured by the manufacturing method of the present application.
The refractive index of the lithium niobate waveguide prepared by the conventional diffusion method changes with increasing depth as shown in fig. 4. The region closest to the diffusion source on the surface of the sample has the largest refractive index, and the refractive index is gradually reduced along with the increase of the diffusion depth and finally is consistent with the refractive index of the lithium niobate. When light is transmitted in such a waveguide, the light velocity (v = c/n) is different between the center and the edge because the refractive index at the center is high and the refractive index at the edge is low. So that the central region has a signal lag when light is transmitted therein. This hysteresis is very disadvantageous for applications like electro-optical modulation. It will make the response under the same signal excitation, after transmitting a certain distance, the signal will be scattered, cause the signal to cross talk, the bit error rate is improved, it is not good for the realization of high speed modulation. The internal refractive indexes of the waveguide structure 101 obtained by etching are the same (as shown in fig. 5), and the waveguide structure is consistent in photoelectric response, so that ultrahigh-speed signal modulation can be realized. Meanwhile, because the thickness of the thin film is very low, when light is transmitted along the waveguide, much energy is outside the waveguide, so that the power consumption is much smaller than that of a bulk sample, the bandwidth is also large, and the integration level of the device is higher.
The following will describe an example of the application of the lithium niobate waveguide manufactured by the method of the present application to an optoelectronic device, thereby proving the excellent technical effect of the method.
Examples of applications are:
1. waveguide coupler
As shown in fig. 6, a waveguide coupler is a common device in an integrated optical circuit chip. As shown, the waveguide coupler is a waveguide coupler in which two waveguides are relatively close to each other at a certain distance, typically about 200nm, and when a light wave propagates from one waveguide, the light energy propagates into the other waveguide by evanescent field coupling. According to the results of simulation of waveguides with different widths, the smaller the waveguide width is, the larger the coupling coefficient is. The width of the thin film waveguide is smaller than that of a general diffusion waveguide. Therefore, the waveguide is manufactured by using the etching technology in the patent, so that the coupling coefficient between the two waveguides can be effectively improved, and the coupling efficiency is improved.
2. Ring resonator
The ring resonator has important application in integrated optics, and can be used as a resonator of an on-chip integrated laser to realize gain output of specific wavelength. When light is transmitted from the waveguide, a part of the light enters the annular cavity, and the basic structure is as shown in the following figure:
as shown in fig. 7 a, light propagates along the waveguide, and then a part of the light enters the ring cavity to resonate, and then exits along the waveguide after the resonance. If the radius of the ring cavity is r, then2πrn= m λ. Where r is the radius of the ring cavity, n is the refractive index of the material, m is an integer, and λ is the wavelength of light propagating in the cavity. As can be seen from the formula, only light with a specific wavelength can generate resonance therein, and the light emitted after resonance generates gain at the wavelength, so that the quality factor is greatly improved. The device can also use the evanescent field coupling method of example 1 (b in FIG. 7) to couple light energy from the waveguide into the annular ring, where the annular ring does not intersect the waveguide but is spaced approximately 100-200nm apart. In some designs, when a pure circular ring structure is considered, the acting distance of light energy entering the circular ring at the tangent position of the circular ring and the waveguide through evanescent field coupling is small, so that the coupling efficiency is influenced, therefore, the design of a diagram c in fig. 7 is adopted to increase the coupling acting distance and improve the coupling efficiency, and most of energy light transmitted in the waveguide can be coupled into the annular cavity to be resonated and then output through proper design. The quality factor is an important description index for describing the ring-shaped resonant cavity, and the intuitive physical meaning of the quality factor is that light is emitted after resonant frequency in the resonant cavity. The coupling capability and loss level of the device are also described from the side. The optical waveguide prepared by the technology of the patent is tightly bound when light is transmitted in the optical waveguide, and the contact area between the resonant cavity device and the substrate can be smaller and the isolation degree is higher by designing the structure of the device, so that the substrate interferes less with the optical waveguide when the light is transmitted in the optical waveguide,the quality factor of the device can be effectively improved. Therefore, the devices are manufactured by the optical waveguide manufacturing technology related in the patent, so that the quality factor of the devices is higher and reaches over millions of orders.
3. Y-junction beam splitter
The Y-junction beam splitter is an essential element in integrated optics. Its function is to split a beam of light into 2 separate light outputs, the basic structure of which is shown in figure 8. In order to avoid large optical loss, the included angle between the two outgoing waveguides cannot be too large, generally θ <3 °, and meanwhile, to ensure that the optical energies output by the two waveguides are consistent, a symmetric design of the device is required. On the basis, the number of the wave guides at the emergent end can be increased according to the requirement, so that the output of more channels is realized. The light splitting device of this patent technology preparation is the tight constraint to light, through structural design, optimizes the node structure for the arc structure by simple bar structure, just can effectively reduce the loss. The device is prepared by the optical waveguide preparation technology related to the patent, so that the optical energy loss at a node can be greatly reduced, and the energy of light entering the waveguide at the emergent end is improved.
4. Electro-optic modulator
The electro-optical modulator is a core device in high-speed optical communication, and has the main functions of loading an electrical signal carrying information to an optical signal, transmitting the signal in the form of optical waves, improving the transmission rate and reducing the transmission loss. The basic structure is shown in fig. 9. Compared with the electro-optical modulator prepared by the traditional diffusion type waveguide, the electro-optical modulator prepared by the optical waveguide preparation technology has a plurality of advantages. In the conventional lithium niobate electro-optical modulator, because the waveguide is embedded in the lithium niobate substrate, and the electrodes are all arranged on the substrate surface, when the RF signal acts on the lithium niobate waveguide, the peripheral electric field of the RF field acts, so the electro-optical efficiency is poor. Meanwhile, in order to realize phase matching of the RF signal and the optical wave signal, the common electrode is thicker (6 microns), most of the RF signal is pulled into the air from the waveguide, so that the effective refractive index is consistent with the optical wave when the RF signal is transmitted, and the thick electrode increases the signalLoss of (2). Moreover, such thick electrodes also increase the capacitance of the system, which is also detrimental to the linear response of the modulator when high speed electrical signals are applied. The electro-optical modulator prepared by etching the lithium niobate thin film has higher integration level. High speed modulators typically employ a traveling wave design where phase matching of the RF and lightwave signals is a consideration, as well as impedance matching of the devices. Because the thin film device is very thin, most of the energy of light and microwave is in SiO2The phase matching of the light wave and the microwave can be realized by proper structural design. Therefore, the electrode can be made thinner, the capacitance is very small, and high-speed modulation is facilitated. The bandwidth of the device is larger, the driving voltage is lower, the modulation rate is faster, and the loss is smaller.
The embodiments provided in the present application are only a few examples of the general concept of the present application, and do not limit the scope of the present application. Any other embodiments extended according to the scheme of the present application without inventive efforts will be within the scope of protection of the present application for a person skilled in the art.
Claims (10)
1. A method for preparing a photoelectric device based on a lithium niobate thin film is characterized by comprising the following steps:
coating and etching a pattern transfer layer on the lithium niobate thin film;
photoetching and developing the transfer layer in the etched pattern to obtain a pattern of the waveguide to be manufactured;
and continuously etching to etch the waveguide pattern on the lithium niobate thin film.
2. The method for producing a lithium niobate thin film-based photoelectric device according to claim 1,
the coating and etching pattern transfer layer on the lithium niobate film comprises:
and coating photoresist on the lithium niobate thin film.
3. The method for producing a lithium niobate thin film-based photoelectric device according to claim 2,
before coating photoresist on the lithium niobate thin film, the method also comprises
And depositing a layer of amorphous silicon on the lithium niobate thin film.
4. The method for producing a lithium niobate thin film-based photoelectric device according to claim 3,
the step of photoetching and developing the transfer layer in the etched pattern to obtain the pattern of the waveguide to be manufactured comprises
Exposing a waveguide pattern to be prepared on photoresist by using a photoetching machine, and carrying out chemical reaction on an illuminated area of the photoresist;
the material in the chemically reacted areas is then removed with a developer to obtain the pattern of the waveguide to be fabricated.
5. The method for producing a lithium niobate thin film-based photoelectric device according to claim 4,
and continuously etching the waveguide pattern on the lithium niobate thin film, wherein the step of continuously etching comprises the following steps:
continuing etching to transfer the pattern of the photoresist to the silicon surface in the etching process; and then, continuously etching by using the silicon as a mask to etch the pattern of the waveguide on the lithium niobate thin film.
6. The method for producing a lithium niobate thin film-based photoelectric device according to any one of claims 3 to 5,
after the lithium niobate thin film is etched to form the pattern of the waveguide, the method further comprises the following steps:
and removing the residual photoresist and amorphous silicon to obtain the waveguide structure.
7. The method for producing a lithium niobate thin film-based photoelectric device according to any one of claims 1 to 5,
before coating and etching the pattern transfer layer on the lithium niobate thin film,
and arranging a layer of silicon dioxide on the substrate of the lithium niobate thin film.
8. The method for producing a lithium niobate thin film-based photoelectric device according to claim 6,
and after the waveguide structure is obtained, deburring the side wall of the waveguide structure.
9. The method for producing a lithium niobate thin film-based photoelectric device according to claim 8,
the deburring method is thermal annealing or caustic agent rinsing.
10. An optoelectronic device based on a lithium niobate thin film, wherein the optoelectronic device based on the lithium niobate thin film is prepared by the preparation method of any one of claims 1 to 9, and the optoelectronic device based on the lithium niobate thin film comprises a lithium niobate base portion and a waveguide structure arranged on the base portion.
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| CN112540428A (en) * | 2020-12-09 | 2021-03-23 | 珠海光库科技股份有限公司 | Lithium niobate single crystal thin film chip and manufacturing method thereof |
| CN112768348A (en) * | 2021-01-18 | 2021-05-07 | 复旦大学 | Optimization method for etching lithium niobate material and improving side wall angle |
| CN114325934A (en) * | 2022-03-17 | 2022-04-12 | 西安中科华芯测控有限公司 | Lithium niobate optical waveguide mask for fiber-optic gyroscope and preparation method and application thereof |
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| CN112768348B (en) * | 2021-01-18 | 2022-05-20 | 复旦大学 | Optimization method for etching lithium niobate material and improving side wall angle |
| CN114325934A (en) * | 2022-03-17 | 2022-04-12 | 西安中科华芯测控有限公司 | Lithium niobate optical waveguide mask for fiber-optic gyroscope and preparation method and application thereof |
| CN117991448A (en) * | 2024-04-07 | 2024-05-07 | 平湖科谱激光科技有限公司 | Method for integrating grating and lithium niobate thin film waveguide |
| CN117991448B (en) * | 2024-04-07 | 2024-06-04 | 平湖科谱激光科技有限公司 | Method for integrating grating and lithium niobate thin film waveguide |
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