CN106324865B - One kind being based on the three-dimensionally integrated photoswitch of phase-change material - Google Patents
One kind being based on the three-dimensionally integrated photoswitch of phase-change material Download PDFInfo
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- CN106324865B CN106324865B CN201610694617.7A CN201610694617A CN106324865B CN 106324865 B CN106324865 B CN 106324865B CN 201610694617 A CN201610694617 A CN 201610694617A CN 106324865 B CN106324865 B CN 106324865B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Abstract
The invention discloses one kind to be based on the three-dimensionally integrated photoswitch of phase-change material, comprising: a lower waveguide layer；Ducting layer on one, the upper layer waveguide and the perpendicular cross-distribution of lower layer's waveguide；One intermediate mixed recharge conducting shell, the ducting layer is made of Medium Wave Guide and phase-change material, intermediate mixed recharge conducting shell consists of three parts: input tapered transmission line, 90 degree of curved waveguides and output tapered transmission line, the wherein electrode that production is made of doped silicon on the inside of 90 degree of curved waveguides, intermediate ducting layer is set to form hot localised points by additional electric pulse, so that induced phase transition materials carry out phase transformation.Relative to traditional 1 × 2 or 2 × 2 optical switch elements, phase-change material is constituted in conjunction with conventional waveguide a kind of composite waveguide and is realized ultra-compact photoswitch with this by the present invention, have the characteristics that it is digital adjust, low in energy consumption, integrated level is high.In addition, preparation process is compatible with existing CMOS technology, therefore the technology has large-scale low-cost productive potentialities.
Description
Technical field
The present invention relates to one kind to be based on the three-dimensionally integrated photoswitch of phase-change material, belongs to integrated optoelectronics field.
Background technique
All-optical switching is directly handled optical signal in area of light, optical-electrical-optical conversion is needed not move through, because without by " electricity
The limitation of sub- bottleneck " has many advantages, such as high speed, broadband, transparent, low-power consumption and potential low cost.Wherein, N × N high
Fast optical switch chip and module are that light exchanges most basic and most crucial component, and importance is equal to the processing in electronic equipment
Device.The following All-optical switching to meet high-speed high capacity and low time delay exchange require, large port, the light exchange chip being switched fast and
Module is required, is mainly to be built in experimental system by the light shutter device of 1 × 2 or 2 × 2,1 × 2 or 2 × 2 light
The switch performance of switch unit affects the performance of N × N photoswitch, so the optical switch element of development 1 × 2 and 2 × 2 extremely closes
It is important.
Integreted phontonics technology can significantly reduce equipment volume, reduce energy consumption, save the cost, therefore integreted phontonics technology
It is very suitable to realize extensive light exchange used in all optical networks.Due to silicon based optoelectronic devices have size it is small,
The advantage that integrated level is high, manufacture craft is mutually compatible with conventional microelectronic CMOS technology, therefore Si-based optoelectronics can be substantially
Degree reduces optical switch chip cost.Silicon substrate photoswitch is the popular research field of recent domestic.The researcher of IBM Corporation
The photoswitch collection of 4 ports and 8 ports is reported on JOURNAL OF LIGHTWAVE TECHNOLOGY (VOL.32, NO.4)
At chip, which utilizes IBM 90nm silicon light technology, includes cmos logic gate, switch driving, multistage photoswitch in chip
Array and thermo-optic phase adjusters etc. realize the single-chip integration of optical path and circuit.In order to solve, electric light adjusting crosstalk is big to be asked
Topic, they on JOURNAL OF LIGHTWAVE TECHNOLOGY (VOL.33, NO.20), are driven using push-pull type and are realized again
4 × 4 Mach of low crosstalk-increase Dare interferometer (MZI) optical switch chips.AT&T Labs 2012 is in OPTICS EXPRESS
8 × 8 optical switch chips based on silicon substrate MZI are reported on (Vol.20, No.17), chip is opened up using switch-and-select
Scheme is flutterred, is made of 112 MZI, switch-mode regulation uses thermo-optic effect.The M.C.Wu group of University of California Berkeley exists
OPTICA (Vol.3, No.1) controls optical planar circuit using MEMS driving, and chip uses Crossbar topological structure, realizes
64 × 64 optical switch chips.At the same time, Zhejiang University reports a kind of base in OPTICS LETTERS (Vol.37, No.12)
In 3 × 3 photoswitch of silicon substrate of multimode interference (MMI) structure.Shanghai Communications University OPTICS EXPRESS (VOL.24,
NO.9 16 × 16 clog-free optical switch chips are realized on).The chip is based on Benes topological structure, contains 56 friendships in total
Unit is changed, hot light is integrated on each unit and electric light adjusts electrode, it can be achieved that phase error compensation and ns magnitude high-speed light
Exchange, entire switch chip are integrated with several hundred a photoelectric cells in total, present the high density photoelectricity collection of silicon light technology well
At ability.
Under normal conditions, Si-based OEIC device changes silicon material by thermo-optic effect or carrier dispersion effect
The characteristic of material, to realize the adjusting to silicon waveguide.But the response speed of thermo-optic effect is slow, usually in musec order；It carries
Although flowing, the sub- effect of dispersion response time is fast, and the adjustable range of its refractive index is limited, and usual refraction index changing is in 0.001 amount
Grade, therefore in order to reach the variation of 180 degree phase, needs the length of millimeter magnitude, cause photoswitch is usually very long, power consumption very
It is high.Although can reduce device size using high q-factor cavity resonator structure or photonic crystal slower rays structure, its bandwidth of operation is logical
Normal very little, loss are larger, can not cascade on a large scale, and very sensitive to variation of ambient temperature.Therefore needing to find one kind can be with
It realizes the material that refractive index significantly, is quickly adjusted, the deficiency of silicon materials is made up with this, opened to significantly reduce silicon light
The size and power consumption of pass.
Summary of the invention
It is an object of the invention in view of the above shortcomings of the prior art, in conjunction with the advantages of phase-change material, propose a kind of base
In the three-dimensionally integrated photoswitch of phase-change material, by by phase-change material constituted in conjunction with conventional waveguide composite waveguide realized with this it is super
Compact photoswitch.
In order to achieve the above objectives, technical solution of the invention is as follows:
A kind of three-dimensionally integrated photoswitch based on phase-change material, comprising: the upper ducting layer that is from top to bottom sequentially distributed, centre
Mixed recharge conducting shell and lower waveguide layer, the upper layer ducting layer and the perpendicular cross-distribution of lower layer's ducting layer, the centre are mixed
Multiplex conducting shell is made of sequentially connected input tapered transmission line, 90 degree of curved waveguides and output tapered transmission line, the input cone
Shape waveguide is located in lower layer's waveguide, and the output tapered transmission line is located under the upper layer ducting layer, described
Electrode is equipped on the inside of 90 degree of curved waveguides, which is connected by metal throuth hole with external metallization pad.
The lower waveguide layer is silicon ducting layer or silicon nitride waveguide layer.
The upper ducting layer is silicon ducting layer or silicon nitride waveguide layer.
The intermediate mixed recharge conducting shell is the phase transformation material that one layer several nanometers or tens nanometers are directly sputtered in silicon waveguide
Material is constituted, which forms compound, such as Ge by Ge, Sb or Te element2Sb2Te5, GeTe, GeSe etc..
The effective refractive index of the intermediate mixed recharge conducting shell will meet: be lower than lower layer's waveguide in phase-change material amorphous state
Effective refractive index, phase-change material be crystalline state when higher than lower layer's waveguide effective refractive index.
There is gap between three ducting layers, the packing material in the gap is silica or silicon oxynitride etc.
Low-index material.
The input tapered transmission line and output waveguide are positive cone (inwardly gradually broadening from edge) or back taper
(inwardly being become narrow gradually from edge).
The electrode is made of doped silicon, is connected by metal throuth hole with external metallization pad, outer on metal pad
Power-up pulse makes intermediate ducting layer form hot localised points, so that induced phase transition materials carry out phase transformation.
Make intermediate ducting layer form hot localised points by applied electronic signal excitation to lead so that phase-change material be made to undergo phase transition
The effective refractive index of composite waveguide is caused to change, to realize that optical signal is exported from different port.
As switch unit, by different switch topologies, the light that multiport goes out into, multiport may be implemented
Switch arrays chip, for fields such as optic communication, on piece optical-fiber networks.
The basic principle of photoswitch of the present invention is: changing effective folding of composite waveguide by changing the state of phase-change material
Rate is penetrated, to realize that optical signal is exported from different output port, to realize light switch function.
Compared with prior art, the solution have the advantages that: by phase-change material be applied to optical switch chip in, have speed
Spend original text, low in energy consumption, the high feature of cycle-index.Phase change film material is realized that data are stored as storage medium, except having
Read or write speed fast (ns magnitude), cycle-index height (> 1012), it is low in energy consumption the features such as except, it is also compatible with existing CMOS technology,
Technology realizes difficulty and industry, and cost is relatively low.
Detailed description of the invention
Fig. 1 is the present invention is based on the schematic diagram of the three-dimensionally integrated photoswitch of phase-change material, wherein intermediate ducting layer input and defeated
Tapered transmission line is positive cone out.
Fig. 2 is the present invention is based on the schematic diagram of the three-dimensionally integrated photoswitch of phase-change material, wherein intermediate ducting layer input and defeated
Tapered transmission line is back taper out.
Fig. 3 is that the present invention is based on the three-dimensionally integrated photoswitch waveguide effective index of phase-change material with intermediate ducting layer width
(W2) change curve.
Fig. 4 is that the present invention is based on the three-dimensionally integrated photoswitch composite waveguide mode distributions of phase-change material to be changed along the direction of propagation.
Fig. 5 is the phase transformation the present invention is based on the three-dimensionally integrated photoswitch GST material of phase-change material under current impulse.
Specific embodiment
The present invention is further elaborated with reference to the accompanying drawings and examples, but protection model of the invention should not be limited with this
It encloses.
Fig. 1 is the present invention is based on the schematic diagram of the three-dimensionally integrated photoswitch of phase-change material, wherein the input cone of intermediate ducting layer
Shape waveguide 7 and output tapered transmission line 3 are positive cone.As shown in Figure 1, the present invention includes:
Ducting layer 2 on one；
One lower waveguide layer 8, the upper layer waveguide 2 and the perpendicular cross-distribution of lower layer's waveguide 8；
One intermediate mixed recharge conducting shell, consists of three parts: input 7,90 degree of curved waveguides 6 of positive cone waveguide and output positive cone
Shape waveguide 3, wherein the electrode 5 being made of doped silicon is made on the inside of 90 degree of curved waveguides 6, via metal throuth hole 4 and metal pad 1
Be connected, outer on metal pad 1 plus electric pulse can form hot localised points in intermediate ducting layer, thus induced phase transition materials into
Row phase transformation.
Photoswitch of the invention can be realized by silicon substrate or silicon nitride-based material.Design the structure of intermediate hybrid waveguide
And size so that its effective refractive index in phase-change material amorphous state lower than the effective refractive index of lower layer's waveguide, and in phase transformation material
It is higher than lower layer's waveguide effective index when material is crystalline state.Refractive index difference of the phase-change material in amorphous state and crystalline state is huge, because
And above-mentioned condition can be met by the size of design middle layer waveguide.According to coupled mode theory, can be seen after two waveguide couplings
At being composite waveguide structure, there are two super models: (TE0 has even symmetry, and TE1 has odd symmetry, and TE0 is effective by TE0 and TE1
Refractive index is higher than TE1).TE0 is close to high index waveguide, and TE1 is close to low-index waveguide；When two waveguide effective index connect
Closely (i.e. phase matched) when, coupling becomes strong between them, and super model energy is more evenly distributed in two waveguides.According to such spy
Point, we can design a kind of coupled structure, wherein lower layer's waveguide be smooth waveguide, intermediate waveguide be tapered transmission line, width by
It is narrow to broaden.TE0 super model can be excited from lower layer's silicon waveguide input light, mode gradually develops in intermediate hybrid waveguide.At intermediate end
End, distribution of the mode of energy in two waveguides are related to phase-change material state: when phase-change material is amorphous state, energy mainly collects
In in lower layer's waveguide；And when phase-change material is crystalline state, energy is main intermediate into middle layer waveguide.Similarly, conical wave
Leading, which may be designed in, narrows from the width, and in this way after input excitation TE1 super model, by schema evolution, can also be retained in light energy
In lower layer's silicon waveguide or the waveguide of centre to centre.
Embodiment
It is based on the three-dimensionally integrated photoswitch of phase-change material with Fig. 1, the waveguide that outputs and inputs of intermediate mixed recharge conducting shell is positive
Taper is embodiment, and waveguide uses silicon materials, phase-change material Ge2Sb2Te5(GST), Fig. 3 is effective refraction of the two super models
Rate is with the change curve of Si-GST duct width (W2), and other parameters are taken as when calculating: 0.5 μm of lower waveguide layer width, lower waveguide
0.22 μm of layer height, 0.21 μm of intermediate ducting layer total height, wherein the GST height 10nm sputtered, intermediate ducting layer and lower waveguide
0.2 μm of spacing between layer.When intermediate ducting layer width is smaller or larger, the effective refractive index difference between two waveguides compares
Greatly, the coupling between them is weaker, thus the effective refractive index of super model is closer to the effective refractive index of single waveguide.Fig. 4
Show the optical mode field distribution at intermediate waveguide different location, here it is apparent that GST has difference under amorphous state and crystalline state
Coupling effect.90 degree of curved waveguides of Si-GST are connected in light shutter device behind coupled waveguide, optical mode can be allowed from centre
Waveguide super model is gradually converted into unicast waveguide mode.In output end, Si-GST duct width is become narrow gradually, and makes its effective refractive index small
In top layer's waveguide effective index, such light can be coupled to output waveguide from Si-GST waveguide.It is adopted in photoswitch design
With tapered transmission line, there is higher bandwidth compared to smooth waveguide, and process allowance is also more preferable.Since GST material is in amorphous
High refractive index variation when state and crystalline state, switch unit can accomplish several micron-scale sizes, and using three-dimensional waveguide junction
Structure avoids waveguide cross knot, keeps device architecture more compact, is suitble to the High Density Integration of switch arrays.
The overturning for realizing optical switch status, needing to induce using electric pulse heating makes GST phase-change material in amorphous state and crystalline substance
Reversible transition occurs between state.In GST in the crystallisation procedure from low-refraction to high refractive index, need to apply one it is weak and wide
Electric pulse local heating is carried out to it, when the temperature of material is between crystallization temperature and fusing point, phase-change material will be crystallized,
To form the crystalline state with high index, as shown in Figure 5.In amorphization of the GST from high refractive index to low-refraction
In, apply a strong and narrow electric pulse and heated, makes the temperature of phase-change material more than the fusing point of material, reach and interrupt crystalline state
The purpose of chemical bond in material.Later by the quenching process of a rapid cooling, make the original in the phase-change material of molten state
Son has little time again bonding arrangement, forms shortrange order, the amorphous state of longrange disorder.When optical signal is transmitted by photoswitch,
GST material is very weak to the absorption of light, and the faint Joule heat of generation is not enough to cause the phase transformation of GST, will not change the shape of switch
State.
The above, the only specific embodiment and embodiment in the present invention, but protection scope of the present invention not office
It is limited to this, within the technical scope disclosed by the invention, what can be readily occurred in transforms or replaces any people for being familiar with the technology, all
It should cover within the scope of the present invention.Therefore, protection scope of the present invention should be with the protection scope of claims
Subject to.
Claims (6)
1. a kind of three-dimensionally integrated photoswitch based on phase-change material characterized by comprising the upper ripple being from top to bottom sequentially distributed
Conducting shell, intermediate mixed recharge conducting shell and lower waveguide layer, the upper ducting layer and the perpendicular cross-distribution of lower waveguide layer, it is described in
Between mixed recharge conducting shell by sequentially connected input tapered transmission line, 90 degree of curved waveguides and output tapered transmission line constitute, described is defeated
Enter tapered transmission line to be located on the lower waveguide layer, the output tapered transmission line is located under the upper ducting layer, described
90 degree of curved waveguides on the inside of be equipped with electrode, which is connected by metal throuth hole with external metallization pad, and the centre is mixed
Multiplex conducting shell be directly sputtered in silicon waveguide one layer several nanometers or tens nanometers phase-change material constitute, the phase-change material be by
Ge, Sb or Te element form compound, and the effective refractive index of the intermediate mixed recharge conducting shell will meet: in phase-change material amorphous
Lower than the effective refractive index of lower layer's waveguide when state, when phase-change material is crystalline state higher than the effective refractive index of lower layer's waveguide.
2. the three-dimensionally integrated photoswitch according to claim 1 based on phase-change material, which is characterized in that the lower waveguide
Layer is silicon ducting layer or silicon nitride waveguide layer.
3. the three-dimensionally integrated photoswitch according to claim 1 based on phase-change material, which is characterized in that the upper waveguide
Layer is silicon ducting layer or silicon nitride waveguide layer.
4. the three-dimensionally integrated photoswitch according to claim 1 based on phase-change material, which is characterized in that the upper waveguide
There is gap between layer, intermediate mixed recharge conducting shell and lower waveguide layer, the packing material in the gap is silica or nitrogen oxidation
Silicon low-index material.
5. the three-dimensionally integrated photoswitch according to claim 1 based on phase-change material, which is characterized in that the input cone
Shape waveguide and output waveguide are positive cones, i.e., inwardly gradually broaden from edge or back taper, i.e., inwardly gradually become from edge
It is narrow.
6. the three-dimensionally integrated photoswitch according to claim 1 based on phase-change material, which is characterized in that the electrode by
Doped silicon is constituted, and is connected by metal throuth hole with external metallization pad, additional electric pulse makes intermediate ducting layer on metal pad
Hot localised points are formed, so that induced phase transition materials carry out phase transformation.
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| CN108279511A (en) * | 2017-12-28 | 2018-07-13 | 宁波大学 | A kind of electrooptic modulator based on phase-change material |
| CN109283768A (en) * | 2018-09-26 | 2019-01-29 | 京东方科技集团股份有限公司 | Optical communication switch, light control method, array substrate and display device |
| CN109655975B (en) * | 2019-01-16 | 2020-12-08 | 浙江大学 | Erasable integrated optical waveguide monitoring device based on phase-change material |
| KR20200092123A (en) * | 2019-01-24 | 2020-08-03 | 한국전자통신연구원 | 3-dimensional optical switch |
| CN109917565A (en) * | 2019-02-18 | 2019-06-21 | 上海交通大学 | Based on the multistage optical attenuator of silicon-phase-change material hybrid integrated |
| CN110286444B (en) * | 2019-06-14 | 2020-07-14 | 浙江大学 | Reconfigurable micro-ring optical switch based on phase change material |
| US11231635B2 (en) * | 2019-11-19 | 2022-01-25 | Hrl Laboratories, Llc | Electrically-controllable 3D optical waveguide switch with phase change materials |
| CN111061069B (en) * | 2020-01-03 | 2023-05-12 | 宁波大学 | Electro-optic modulator of groove type composite waveguide based on silicon and phase change material |
| CN111399117B (en) * | 2020-04-30 | 2021-02-02 | 中国科学院半导体研究所 | Hybrid integrated silicon nitride micro-ring resonant cavity and preparation method thereof |
| CN111999957B (en) * | 2020-07-17 | 2022-08-05 | 宁波大学 | Polarization insensitive photosensitive switch based on assistance of germanium antimony tellurium compound phase change material |
| CN112099140B (en) * | 2020-10-29 | 2022-10-14 | 歌尔股份有限公司 | Diffraction optical waveguide with uniform emergent brightness, manufacturing method and head-mounted display device |
| US11294119B1 (en) | 2020-11-19 | 2022-04-05 | Cisco Technology, Inc. | Multimode-interference waveguide crossings |
| CN112987175A (en) * | 2021-03-03 | 2021-06-18 | 南京理工大学 | Mode selection vertical coupler applied to multilayer photonic platform |
| CN114296182B (en) * | 2022-01-07 | 2024-04-12 | 吉林大学 | Three-dimensional optical interleaver based on silicon-based optical waveguide and preparation method thereof |
| CN114721089A (en) * | 2022-06-08 | 2022-07-08 | 深圳大学 | Phased array radar system based on phase change material photoswitch |
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| JP5083732B2 (en) * | 2007-11-26 | 2012-11-28 | 学校法人慶應義塾 | Light switch |
| CN101866066A (en) * | 2010-05-28 | 2010-10-20 | 浙江大学 | Phase change material-aid micro ring-based optical waveguide switch |
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