JP5083732B2 - Light switch - Google Patents
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- JP5083732B2 JP5083732B2 JP2007304907A JP2007304907A JP5083732B2 JP 5083732 B2 JP5083732 B2 JP 5083732B2 JP 2007304907 A JP2007304907 A JP 2007304907A JP 2007304907 A JP2007304907 A JP 2007304907A JP 5083732 B2 JP5083732 B2 JP 5083732B2
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Description
本発明は、光通信ネットワークノードにおけるスイッチング処理回路に適用して有効な光スイッチに関する。 The present invention relates to an optical switch effective when applied to a switching processing circuit in an optical communication network node.
図５は、従来の典型的な方向性結合器型光スイッチの構成を示す図である。図５(a)は、上面図である。従来の典型的な光スイッチは、入力導波路２０１、Ｓ字導波路部２０２、導波路近接部２０３、出力導波路２０４、近接部の導波路の屈折率を制御するための電極２０５から構成される。図５(b)は、図５(a)のＢ−Ｂ’における断面図である。n-InP基板２０６上に、n-InP下部クラッド２０７、i-InGaAsPコア２０８、p-InP上部クラッド２０９からなる導波路を構成し、近接部の片側の導波路には電流注入のためのp-InGaAs上部コンタクト層２１０、Au/AuZnNi電極層２１１を形成し、n-InP基板２０６下面にもAu/AuGeNi電極２１２を形成する。 FIG. 5 is a diagram showing a configuration of a conventional typical directional coupler type optical switch. FIG. 5A is a top view. A conventional typical optical switch is composed of an input waveguide 201, an S-shaped waveguide section 202, a waveguide proximity section 203, an output waveguide 204, and an electrode 205 for controlling the refractive index of the proximity waveguide. The FIG. 5B is a cross-sectional view taken along B-B ′ of FIG. A waveguide composed of an n-InP lower clad 207, an i-InGaAsP core 208, and a p-InP upper clad 209 is formed on an n-InP substrate 206, and a p for current injection is introduced into one of the adjacent waveguides. An InGaAs upper contact layer 210 and an Au / AuZnNi electrode layer 211 are formed, and an Au / AuGeNi electrode 212 is also formed on the lower surface of the n-InP substrate 206.
電流を注入すると注入キャリアによるプラズマ効果のためにi-InGaAsPコア２０８の屈折率が最大０．５％程度変化する。このため、方向性結合部の結合長が変化し、入射信号の出力ポートを切り替えることができる。 When current is injected, the refractive index of the i-InGaAsP core 208 changes by a maximum of about 0.5% due to the plasma effect caused by injected carriers. For this reason, the coupling length of the directional coupling section changes, and the output port of the incident signal can be switched.
しかしながら、従来の光スイッチは屈折率変化量が高々０．５％であるため、方向性結合部長を少なくとも１００μｍ以上とする必要がある。そのため、２×２スイッチの全長は数百μｍ以上となる。 However, since the conventional optical switch has a refractive index variation of at most 0.5%, the directional coupling portion length needs to be at least 100 μm or more. Therefore, the total length of the 2 × 2 switch is several hundred μm or more.
また、他の従来技術として、石英導波路で構成された２×２スイッチでは、熱光学効果による屈折率変化が０．０５％程度であるため、スイッチ全長は数ｍｍになる。 As another prior art, in a 2 × 2 switch composed of a quartz waveguide, the refractive index change due to the thermo-optic effect is about 0.05%, so the total switch length is several mm.
さらに、これらのスイッチは、屈折率変化を維持するために、常に電流を流し続ける必要があるため、スイッチの消費電力は数百ｍＷとなる。またさらに、基板温度上昇を抑えるためのペルチェ素子を基板下面に取り付ける必要があり、消費電力の増大につながる。 Furthermore, since these switches need to constantly pass a current in order to maintain the refractive index change, the power consumption of the switches is several hundred mW. Furthermore, it is necessary to attach a Peltier element for suppressing a rise in the substrate temperature to the lower surface of the substrate, leading to an increase in power consumption.
そこで、本発明者らは、相変化材料を光スイッチに用いることを提案している（例えば、特許文献１参照。）。これによって、屈折率変化を維持するために、常に電流を流し続ける必要はなくなった。
しかし、相変化材料を用いる特許文献１の発明においても、その相変化材料によって導波路近傍の屈折率を変化させるものであるので、等価屈折率変化量が小さいため、小型化することができなかった。あるいは、導波路中に相変化材料を挿入して配置するため、光散乱損失が大きかった。 However, even in the invention of Patent Document 1 using a phase change material, since the refractive index near the waveguide is changed by the phase change material, the amount of change in the equivalent refractive index is small, and thus the size cannot be reduced. It was. Alternatively, since the phase change material is inserted and arranged in the waveguide, the light scattering loss is large.
本発明は、上記問題点に鑑み、導波路を相変化材料で構成して等価屈折率変化量を大きくすることでスイッチを小型化し、さらに、スイッチング時にのみ電力を消費するので低電力化ができる光スイッチを提供することを目的とする。 In view of the above problems, the present invention makes it possible to reduce the size of a switch by constructing a waveguide from a phase change material and increasing the amount of change in the equivalent refractive index. Further, since power is consumed only during switching, the power can be reduced. An object is to provide an optical switch.
本発明の光スイッチは、基板と、該基板上に形成され入力導波路及び第１出力導波路に接続される第１導波路と、前記基板上に形成され前記第１導波路と所定の間隔を空けて第１導波路と平行に配置され、相変化材料で構成される第２導波路と、前記基板上に形成され前記第１導波路とで第２導波路を挟むように第２導波路と所定の間隔を空けて第２導波路と平行に配置され、第２出力導波路に接続される第３導波路とを備え、前記第１導波路乃至第３導波路によって方向性結合器を構成し、前記相変化材料のメモリ性によって前記第１導波路と第２導波路間及び第２導波路と第３導波路間の結合係数を変化させて、その結合状態をBAR状態とCROSS状態とにスイッチングすることを特徴とする。
The optical switch of the present invention includes a substrate, a first waveguide formed on the substrate and connected to the input waveguide and the first output waveguide, and a predetermined distance from the first waveguide formed on the substrate. The second waveguide is disposed in parallel with the first waveguide with a gap between the second waveguide formed of the phase change material and the first waveguide formed on the substrate and sandwiching the second waveguide. And a third waveguide disposed in parallel with the second waveguide with a predetermined interval and connected to the second output waveguide, and the directional coupler is configured by the first to third waveguides. The coupling coefficient between the first waveguide and the second waveguide and between the second waveguide and the third waveguide is changed according to the memory property of the phase change material, and the coupling state is changed between the BAR state and the CROSS. It is characterized by switching to a state.
また、前記第１乃至第３導波路は、前記基板に対して平行に並んで配置されていることで、簡単な製造プロセスで製造することができる。 In addition, the first to third waveguides can be manufactured by a simple manufacturing process by being arranged in parallel with the substrate.
また、前記第１乃至第３導波路は、前記基板に対して垂直に並んで配置されていることで、一般に厚さ方法の形状精度は高いので、設計に近い形状のスイッチを作りやすい利点がある。 In addition, since the first to third waveguides are arranged side by side with respect to the substrate, the thickness accuracy of the thickness method is generally high, so that it is easy to make a switch having a shape close to the design. is there.
また、前記相変化材料は、テトラヘドラル系材料、Ge-Sb-Te系カルコゲナイド系材料、Sb-Te系カルコゲナイド系材料、又は、カルコゲナイド材料を含むことが望ましい。 The phase change material preferably includes a tetrahedral material, a Ge—Sb—Te chalcogenide material, an Sb—Te chalcogenide material, or a chalcogenide material.
また、前記第１及び第３導波路は、シリコン、窒化シリコン、シリコンゲルマニウム、リン化インジウム、ヒ素化ガリウム、窒化ガリウム、リン化ヒ素化インジウムガリウム、ヒ素化インジウムアルミニウム、ヒ素化インジウムガリウム、又は、ヒ素化窒化ガリウムを含むことが望ましい。 The first and third waveguides may be silicon, silicon nitride, silicon germanium, indium phosphide, gallium arsenide, gallium nitride, indium arsenide phosphide, indium aluminum arsenide, indium gallium arsenide, or It is desirable to include arsenic gallium nitride.
また、前記光スイッチが、該光スイッチを駆動する電子回路基板上に形成されていることで、光スイッチを駆動する回路を集積化し、小型な光スイッチモジュールを構成することができる。 In addition, since the optical switch is formed on an electronic circuit board that drives the optical switch, a circuit that drives the optical switch can be integrated and a small optical switch module can be configured.
本発明のうち代表的なものによって得られる効果を簡単に説明すれば、下記の通りである。
(1) 相変化材料の屈折率変化量が大きいので、全長十数μｍの超小型光スイッチを構成することができる。
(2) 相変化材料はメモリ性を有しているため、スイッチング時にのみ電力を消費するので低電力化ができる。結果として温度制御用のペルチェ素子が不要になる。
(3) 基板垂直方向に方向性結合回路を構成することで素子作成の精度を高め、歩留まり良くスイッチを構成することができる。
(4) 電子回路基板上に構成し、駆動回路も一体化して小型なスイッチモジュールを構成することが可能である。
The effects obtained by the representative ones of the present invention will be briefly described as follows.
(1) Since the amount of change in the refractive index of the phase change material is large, an ultra-compact optical switch having a total length of several tens of μm can be configured.
(2) Since the phase change material has a memory property, it consumes power only during switching, so that the power can be reduced. As a result, a Peltier element for temperature control becomes unnecessary.
(3) By constructing a directional coupling circuit in the direction perpendicular to the substrate, it is possible to increase the accuracy of element creation and to configure a switch with a high yield.
(4) It is possible to construct a small switch module that is constructed on an electronic circuit board and integrated with a drive circuit.
以下、添付図面を参照しながら本発明を実施するための最良の形態について詳細に説明する。なお、実施例を説明するための全図において、同一の機能を有するものは同一符号を付け、その繰り返しの説明は省略する。 The best mode for carrying out the present invention will be described below in detail with reference to the accompanying drawings. In all the drawings for explaining the embodiments, parts having the same function are given the same reference numerals, and repeated explanation thereof is omitted.
図１は、本発明の実施例１による光スイッチの構成を示す図である。図１(a)は、その斜視図、図１(b)は、上面図、図１(c)は、図１(a)のＣ−Ｃ’における断面図である。本実施例１の光スイッチは、相変化材料で構成される導波路１０１、Si導波路１０２、SiO2クラッド１０３、Si基板１０４、及び相変化材料で構成される導波路１０１に電流を流す配線１０５からなる。これにより一種の方向性結合器型光スイッチを構成している。波長1.55μｍの通信波長帯において、GeSbTe系カルコゲナイド系材料の結晶状態及びアモルファス状態の複素屈折率は、それぞれ、5.1+0.5i、3.6+0.01iである。Si導波路１０２及びSiO2クラッド１０３の複素屈折率は、それぞれ、3.46+0.00i、1.45+0.00iである。 1 is a diagram illustrating a configuration of an optical switch according to a first embodiment of the present invention. 1A is a perspective view thereof, FIG. 1B is a top view thereof, and FIG. 1C is a cross-sectional view taken along line CC ′ of FIG. 1A. The optical switch according to the first embodiment includes a waveguide 101 made of a phase change material, a Si waveguide 102, a SiO 2 clad 103, a Si substrate 104, and a wiring for supplying a current to the waveguide 101 made of a phase change material. 105. This constitutes a kind of directional coupler type optical switch. In the communication wavelength band having a wavelength of 1.55 μm, the complex refractive indices of the crystalline state and the amorphous state of the GeSbTe chalcogenide material are 5.1 + 0.5i and 3.6 + 0.01i, respectively. The complex refractive indexes of the Si waveguide 102 and the SiO 2 cladding 103 are 3.46 + 0.00i and 1.45 + 0.00i, respectively.
図２は、本発明の実施例１による光スイッチの動作を説明する図である。図１(b)における、Ｗ、Ｄ、Ｌの値を、それぞれ、0.19μｍ、4.1μｍ、0.16μｍと仮定する。図２は、これらの値を元に光スイッチの動作をビーム伝搬法によって計算した結果を示す。相変化材料の屈折率変化に伴い、導波路間の光結合が変化し、相変化材料が結晶状態の場合（図２(a)）、スイッチはBAR状態（Port1から入射した光がPortA、Port2から入射した光がPortBから出力）になり、逆に相変化材料がアモルファス状態の場合（図２(b)）、スイッチはCROSS状態（Port1から入射した光がPortB、Port2から入射した光がPortAから出力）となる。なお、従来の方向性結合型光スイッチでは、屈折率変化量が僅かであったため、屈折率変化に伴う結合長の変化によってスイッチングしていたが、相変化材料では屈折率変化量が大きいため、結合係数そのものが大きく変化してスイッチングしているので、スイッチング原理も異なる。スイッチ寸法は、約3μｍ×14μｍとすることができる。例としてSi導波路を利用する場合を示したが、他材料の導波路でも同様のスイッチを構成できることは言うまでもない。また、電流パルスで駆動する構成を示したが、相変化材料は光パルスの照射によっても、結晶状態とアモルファス状態を遷移させることができるので、光パルス駆動型にすることができることも言うまでもない。
FIG. 2 is a diagram for explaining the operation of the optical switch according to the first embodiment of the present invention. The values of W, D, and L in FIG. 1 (b) are assumed to be 0.19 μm, 4.1 μm, and 0.16 μm, respectively. FIG. 2 shows the result of calculating the operation of the optical switch based on these values by the beam propagation method. When the refractive index of the phase change material changes, the optical coupling between the waveguides changes, and when the phase change material is in the crystalline state (Fig. 2 (a)), the switch is in the BAR state (light incident from Port1 is PortA, Port2). If the phase change material is in an amorphous state (Figure 2 (b)), the switch is in the CROSS state (light incident from Port1 is PortB, and light incident from Port2 is PortA). Output). In addition, in the conventional directional coupling type optical switch, since the amount of change in the refractive index was slight, switching was performed by the change in the coupling length accompanying the change in the refractive index, but in the phase change material, the amount of change in the refractive index is large. Since the coupling coefficient itself changes and switches, the switching principle is also different . Switch size may be about 3 [mu] m × 14 [mu] m. As an example, the case where a Si waveguide is used has been shown, but it goes without saying that a similar switch can also be configured using a waveguide made of another material. In addition, although a configuration in which driving is performed with a current pulse is shown, it is needless to say that a phase change material can be changed to a crystalline state and an amorphous state by irradiation with a light pulse, so that it can be a light pulse driving type.
図３は、本発明の実施例２による光スイッチの構成を示す図である。図３(a)は、その斜視図、図３(b)は、図３(a)のＢ−Ｂ’における断面図である。実施例１の光スイッチは、基板に対して平行に導波路を近接させて並べて方向性結合部を構成したが、本実施例２の光スイッチは、基板に対して垂直に導波路を近接させて並べて方向性結合部を構成した点が実施例１と相違する。一般に厚さ方法の形状精度は高いので、設計に近い形状のスイッチを作りやすい利点がある。実施例２の光スイッチの動作は実施例１と同様である。 FIG. 3 is a diagram illustrating a configuration of an optical switch according to the second embodiment of the present invention. 3A is a perspective view thereof, and FIG. 3B is a cross-sectional view taken along the line B-B ′ of FIG. In the optical switch of Example 1, the directional coupling unit is configured by arranging the waveguides close to each other in parallel with the substrate. However, in the optical switch of Example 2, the waveguide is brought close to the substrate vertically. This is different from the first embodiment in that the directional coupling portions are arranged side by side. In general, since the thickness accuracy of the thickness method is high, there is an advantage that it is easy to make a switch having a shape close to the design. The operation of the optical switch of the second embodiment is the same as that of the first embodiment.
図４は、本発明の実施例３による光スイッチの構成を示す斜視図である。実施例１の光スイッチは、基板をSi基板としたが、本実施例２の光スイッチは、基板を電子回路が形成されている電子回路基板１０６で構成した点が実施例１と相違する。これによって、光スイッチを駆動する回路を集積化し、小型な光スイッチモジュールを構成することができる。また、多段構成の例を示したが、光スイッチ単体の動作は、実施例１と同様である。 FIG. 4 is a perspective view showing a configuration of an optical switch according to Embodiment 3 of the present invention. The optical switch according to the first embodiment uses a Si substrate as the substrate, but the optical switch according to the second embodiment is different from the first embodiment in that the substrate is configured by an electronic circuit board 106 on which an electronic circuit is formed. As a result, a circuit for driving the optical switch can be integrated to form a small optical switch module. In addition, although an example of a multi-stage configuration has been shown, the operation of a single optical switch is the same as in the first embodiment.
なお、本発明は上記実施例に限定されるものではない。 In addition, this invention is not limited to the said Example.
１０１ 導波路
１０２ Si導波路
１０３ SiO2クラッド
１０４ Si基板
１０５ 配線
１０６ 電子回路基板
２０１ 入力導波路
２０２ Ｓ字導波路部
２０３ 導波路近接部
２０４ 出力導波路
２０５ 電極
２０６ n-InP基板
２０７ n-InP下部クラッド
２０８ i-InGaAsPコア
２０９ p-InP上部クラッド
２１０ p-InGaAs上部コンタクト層
２１１ Au/AuZnNi電極層
２１２ Au/AuGeNi電極
101 waveguide 102 Si waveguide 103 SiO 2 cladding 104 Si substrate 105 wiring 106 electronic circuit board 201 input waveguide 202 S-shaped waveguide section 203 waveguide proximity section 204 output waveguide 205 electrode 206 n-InP substrate 207 n-InP Lower clad 208 i-InGaAsP core 209 p-InP upper clad 210 p-InGaAs upper contact layer 211 Au / AuZnNi electrode layer 212 Au / AuGeNi electrode
Claims (6)
該基板上に形成され入力導波路及び第１出力導波路に接続される第１導波路と、
前記基板上に形成され前記第１導波路と所定の間隔を空けて第１導波路と平行に配置され、相変化材料で構成される第２導波路と、
前記基板上に形成され前記第１導波路とで第２導波路を挟むように第２導波路と所定の間隔を空けて第２導波路と平行に配置され、第２出力導波路に接続される第３導波路と
を備え、前記第１導波路乃至第３導波路によって方向性結合器を構成し、前記相変化材料のメモリ性によって前記第１導波路と第２導波路間及び第２導波路と第３導波路間の結合係数を変化させて、その結合状態をBAR状態とCROSS状態とにスイッチングすることを特徴とする光スイッチ。 A substrate,
A first waveguide formed on the substrate and connected to the input waveguide and the first output waveguide;
A second waveguide formed on the substrate and arranged in parallel to the first waveguide at a predetermined interval from the first waveguide, and made of a phase change material;
The second waveguide is formed in parallel with the second waveguide at a predetermined interval so as to sandwich the second waveguide between the first waveguide formed on the substrate and connected to the second output waveguide. A third waveguide, and a directional coupler is configured by the first to third waveguides, and the first and second waveguides and the second waveguide are formed by the memory property of the phase change material. An optical switch characterized by changing a coupling coefficient between a waveguide and a third waveguide and switching the coupling state between a BAR state and a CROSS state.
The optical switch according to claim 1, wherein the optical switch is formed on an electronic circuit board that drives the optical switch.
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| CN113168065A (en) * | 2018-11-28 | 2021-07-23 | 京瓷株式会社 | Optical switch |
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| CN101833220A (en) * | 2010-04-20 | 2010-09-15 | 浙江大学 | Self-sustaining waveguide optical switch assisted by phase-change material |
| JP5691034B2 (en) * | 2010-12-17 | 2015-04-01 | 学校法人慶應義塾 | Waveguide type optical protection device and waveguide type optical protection device |
| CN106324865B (en) * | 2016-08-19 | 2018-12-07 | 上海交通大学 | One kind being based on the three-dimensionally integrated photoswitch of phase-change material |
| KR20200092123A (en) * | 2019-01-24 | 2020-08-03 | 한국전자통신연구원 | 3-dimensional optical switch |
| EP4062213A4 (en) * | 2019-11-19 | 2023-11-22 | HRL Laboratories LLC | Electrically-controllable 3d optical waveguide switch with phase change materials |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05196973A (en) * | 1991-09-12 | 1993-08-06 | Sumitomo Electric Ind Ltd | Optical switch |
| JPH06242335A (en) * | 1993-02-16 | 1994-09-02 | Nippon Telegr & Teleph Corp <Ntt> | Consolidation type plane optical waveguide |
| JP4491188B2 (en) * | 2002-07-11 | 2010-06-30 | 日本電気株式会社 | Coupled optical waveguide |
| JP2004279687A (en) * | 2003-03-14 | 2004-10-07 | Tetsuzo Yoshimura | Optoelectronic microsystem, waveguide element, variable well optical ic and optoelectronic micro/nanosystem |
| JP2006184345A (en) * | 2004-12-27 | 2006-07-13 | Keio Gijuku | Optical switch, optical serial-parallel converter, parallel bit delay variable/wavelength conversion circuit, and optical time switch |
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2007
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113168065A (en) * | 2018-11-28 | 2021-07-23 | 京瓷株式会社 | Optical switch |
| EP3889679A4 (en) * | 2018-11-28 | 2022-10-26 | Kyocera Corporation | Optical switch |
| US11782219B2 (en) | 2018-11-28 | 2023-10-10 | Kyocera Corporation | Optical switch |
| CN113168065B (en) * | 2018-11-28 | 2024-07-19 | 京瓷株式会社 | Optical switch |
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| JP2009128718A (en) | 2009-06-11 |
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