CN106569350B - One kind being based on Si-VO2The electrooptic modulator of composite waveguide - Google Patents

One kind being based on Si-VO2The electrooptic modulator of composite waveguide Download PDF

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CN106569350B
CN106569350B CN201610941083.3A CN201610941083A CN106569350B CN 106569350 B CN106569350 B CN 106569350B CN 201610941083 A CN201610941083 A CN 201610941083A CN 106569350 B CN106569350 B CN 106569350B
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slit
waveguide
type
raised line
heavily doped
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CN106569350A (en
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周林杰
孙照印
陆梁军
张涵予
陈建平
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Shanghai Jiaotong University
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Shanghai Jiaotong University
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/0305—Constructional arrangements

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The present invention discloses a kind of based on Si-VO2The electrooptic modulator of composite waveguide, structure sequentially consist of silicon substrate, silica under-clad layer, ridge waveguide, silica top covering, metal electrode layer.Wherein ridge waveguide is carved with slit, forms Si-VO filled with vanadium dioxide in raised line2Composite waveguide is used as insulation filled with silica in the plate of two sides.The p-type and N-type lightly doped district of slit two sides constitute PN junction, and metal electrode is connected with plate two sides heavily doped region.Basic principle of the invention is to undergo phase transition the variation for causing refractive index under electric field action using vanadium dioxide, to realize modulation.The electrooptical modulator structure is simple, modulation extinction ratio is high, insertion loss is low, intensity of reflected light can effectively be weakened simultaneously using inclined vanadium dioxide slot configurations simultaneously with increasing action length, be with a wide range of applications in optic communication and integrated electro subdomains.

Description

One kind being based on Si-VO2The electrooptic modulator of composite waveguide
Technical field
The present invention relates to the Electro-optical Modulation technologies in silicon substrate integrated optoelectronics, especially a kind of to be based on Si-VO2 complex wave The electrooptic modulator led.
Background technique
Silicon based optoelectronic devices are excellent by its low-power consumption, low cost, micromation, etc. compatible with conventional microelectronic processing technology Gesture becomes a part indispensable in the following Optical Communication Technology Development.Crucial device as electro-optic conversion in optical transport network One of part, modulator are all the hot spot of researchers' concern all the time, and the quality of performance will directly affect entire optic communication The superiority and inferiority of system.
Under normal conditions, silicon substrate integrated opto-electronic device changes silicon material by thermo-optic effect or carrier dispersion effect The refractive index characteristic of material, to realize active adjusting.But thermo-optic effect speed is relatively slow, usually in musec order；Current-carrying Although the sub- effect of dispersion response time is fast, the adjustable range of its refractive index is limited, the change of usual refractive index in 10-3 magnitude, Therefore the variation in order to realize 180 degree phase, the length of device need to lead to high-speed modulator and light switch in millimeter magnitude Part general size is very big.Therefore it needs to find a kind of material that high speed may be implemented and significantly adjust refractive index, collection is mixed with silicon At electrooptic modulator is realized, to further decrease the size and power consumption of silicon-based modulator.
Since nineteen fifty-nine is found with the barium oxide of phase-change characteristic, many countries all carry out preparation method In-depth study and exploration.It is got over by improving preparation method and adjusting process parameter, the performance of the vanadium dioxide film of preparation Come more excellent.As a kind of phase-change material medium state can be achieved to the phase transformation between metallic state in vanadium dioxide under hot photoelectric induction, The variation of refractive index improves three orders of magnitude than silicon materials, thus particularly attractive in terms of realizing opto-electronic device.Most Closely researcher has found also by experiment there is fast transition mechanism in this phase transformation, the picosecond time under extra electric field induction Phase transformation is achieved that in scale, thus is very suitable to production high-speed modulator, is the following electrooptic modulator very potential one Kind new material.
Based on vanadium dioxide phase-change mechanism, vanadium dioxide material and silicon waveguide junction can be collectively formed composite waveguide, used In production silicon-based electro-optical modulator, it is super that a kind of high speed may be implemented in the characteristic significantlyd change using its rapid phase transition and refractive index Small sized wide-band electrooptic modulator.
Summary of the invention
The present invention be based on existing photon theory and mature preparation process basis, regarding to the issue above with existing skill The deficiency of art proposes a kind of electrooptic modulator based on Si-VO2 composite waveguide, has in the silicon waveguide of the silicon-based electro-optical modulator There are the slanted slots of a filling vanadium dioxide, vanadium dioxide can not only quickly undergo phase transition realization and adjust under DC Electric Field System, and slanted slots structure can increase the action length of light and vanadium dioxide and weaken the reflection of light simultaneously.The modulator knot Structure is simple, modulation extinction ratio is high, insertion loss is low, is with a wide range of applications in optic communication and integrated electro subdomains.
In order to achieve the above objectives, technical solution of the invention is as follows:
It is a kind of based on silicon-vanadium dioxide composite waveguide electrooptic modulator, including from top to bottom sequentially connected silicon substrate, Silica under-clad layer, ridge waveguide layer, silica top covering and metal electrode layer；The ridge waveguide layer is by intermediate projections The low flat plate district's groups in raised line area and two sides at being carved with the slit through waveguide in the upper surface of the ridge waveguide layer, and should Slit and the angle of the waveguide longitudinal direction are 5 °~90 °, and vanadium dioxide is filled in the raised line slit in the raised line area, described flat It is filled with silica in the plate slots in plate area, is respectively formed N-type in the two sides of the raised line slit in the raised line area and is lightly doped Area and p-type lightly doped district are respectively formed N-type heavily doped region and p-type heavily doped region in the two sides of the plate slots in the plate area, And the N-type lightly doped district exists with the N-type heavily doped region in the ipsilateral of slit, the p-type lightly doped district and p-type heavily doped region Slit it is ipsilateral；The metal electrode layer is made of mutual disconnected two parts, and a part is logical through silica top covering Hole is connected to N-type heavily doped region, and through-hole of the another part through silica top covering is connected to p-type heavily doped region, forms ohm Contact connects microwave signal when modulating work.
Preferably, the ridge waveguide layer is made of silicon materials, and the raised line is higher than the plate area.
Preferably, the height in the plate area is 20nm~200nm, and the height in the raised line area is 200nm~500nm, The width in the raised line area is 300nm~700nm.
Preferably, the width of the slit is 10nm~300nm, and depth is 200nm~500nm, the depth of the slit It is equal with the height in ridge waveguide raised line area.
Preferably, the polarity of heavily doped region is identical as the polarity of the lightly doped district, and the N-type lightly doped district and p-type are light The doping concentration of doped region is below 1 × 1018cm-3, the doping concentration of the N-type heavily doped region and p-type heavily doped region is above 1×1019cm-3。
Preferably, the spacing on the N-type heavily doped region and p-type heavily doped region and two boundary of raised line area is all larger than 0.2 μ m。
Compared with prior art, the beneficial effects of the present invention are:
1) vanadium dioxide phase-change material is used, device size is small, modulating speed is fast, extinction ratio is high, loss is low.
2) vanadium dioxide is designed to tilted shape, increases light and vanadium dioxide action length, while also effectively reducing The reflection of light.
3) structure is simple, easily designs and prepares, at low cost.
Detailed description of the invention
Fig. 1 is that the present invention is based on Si-VO2The structural schematic diagram of one embodiment of the electrooptic modulator of composite waveguide
Fig. 2 is that the present invention is based on Si-VO2The internal electric field of the electrooptic modulator of composite waveguide emulates schematic diagram, wherein a To be transmission Energy distribution top view (xz plane) of the semiconductor form time in waveguide when vanadium dioxide, b is to work as vanadium dioxide The transmission Energy distribution top view (xz plane) for being the metallic state time in waveguide, c are when vanadium dioxide is the semiconductor form time Transmission Energy distribution side view (yz plane) in waveguide, d are when vanadium dioxide is transmission of the metallic state time in waveguide Energy distribution side view (yz plane).
Fig. 3 is that the present invention is based on Si-VO2The electrooptic modulator of composite waveguide is by changing vanadium dioxide width and inclination angle Spend obtained simulation result curve, wherein pass of a between different slot width modulated device extinction ratios and slit inclination angle System, relationship of the b between different slot width modulated device insertion loss and slit inclination angle, c are the downward of different slot widths Relationship between device quality factor (extinction ratio and insertion loss ratio) processed and slit inclination angle, d are the downward of different slot widths Relationship between device intensity of reflected light processed and slit inclination angle, e is under the difference slot width when vanadium dioxide is semiconductor form Relationship between modulator intensity of reflected light and slit inclination angle.
Fig. 4 is that the present invention is based on Si-VO2The electrooptic modulator of composite waveguide under different lambda1-wavelengths extinction ratio and insert Enter the curve of loss.
Specific embodiment
It elaborates with reference to the accompanying drawings and examples to the embodiment of the present invention, the present embodiment is with skill of the invention Implemented premised on art scheme, gives detailed embodiment and operating process, but protection scope of the present invention is not limited to Following embodiments.
Fig. 1 is that the present invention is based on the structural schematic diagram of one embodiment of the electrooptic modulator of Si-VO2 composite waveguide, packets It includes: it is logical to be respectively as follows: silicon substrate 1, silica under-clad layer 2, ridge waveguide layer 3, silica top covering 10, metal from bottom to top Hole 11, metal electrode layer 12.
Wherein, silica under-clad layer 2 is with a thickness of 2 μm, 3 flat part height H of ridge waveguide layer1For 60nm, ridge waveguide 3 Raised line height H2For 160nm, raised line width W1For 500nm, ridge waveguide sheet width W2It is 5 μm.
The N-shaped lightly doped region 8 is N-shaped heavily doped region 6 in the ipsilateral of slit, and 0.35 μm of waveguide edge distance, Region 9 is gently mixed in the ipsilateral for p-type heavily doped region 7 of slit with the p-type, is 0.35 μm with waveguide edge distance.
The slit 4 for being filled with silica and to be filled with the width of the slit 5 of vanadium dioxide be 50nm.
N-shaped and p-type lightly doped district concentration are 1 × 1018cm-3, N-shaped and p-type heavily doped region concentration are 1 × 1020cm-3。
Working mechanism of the present invention is, under DC Electric Field, vanadium dioxide have occurred nonmetallic state to metallic state can Reverse transformation, since metallic state imaginary index is very big, so major part light is absorbed when metallic state, so that the energy of output par, c It is substantially reduced, realizes the modulation of output light intensity, wherein the field distribution of device inside photoelectricity is as shown in Figure 2.
Simulation result is as shown in figure 3, the extinction ratio of respectively different in width vanadium dioxide modulator, insertion loss, FoM Reflected intensity is with tilt angle varied under (defining the ratio that FoM is Extinction ratio and insertion loss IL), metallic state and nonmetallic state Curve.Fig. 3 (a) indicates that Extinction ratio is substantially inversely proportional to slit tilt angle, directlys proportional to vanadium dioxide width, but There are extreme points when 20 °.Fig. 3 (b) indicate insertion loss IL be inversely proportional with slit tilt angle, with vanadium dioxide width at Direct ratio.Bigger extinction ratio and smaller insertion loss in order to obtain, we define FoM, as a result as shown in Fig. 3 (c), wherein 20 ° of angle, width 50nm are optimal solution, and device extinction ratio is 8.7dB at this time, and insertion loss only has 1.9dB.Simultaneously from Fig. 3 (d), known to (e) simulation result under metal and nonmetallic state, it is lower to be substantially angle more inclined reflection energy, to demonstrate,prove The clear present invention has been obviously reduced the reflection of light energy.
As can be seen from Figure 4, extinction ratio reaches maximum value when wavelength is 1497nm, and extinction ratio can in the range of 100nm It maintains a higher horizontal and insertion loss also relatively low, illustrates that the present invention can work well in optical communicating waveband.
It should be noted last that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although ginseng It is described the invention in detail according to preferred embodiment, those skilled in the art should understand that, it can be to invention Technical solution is modified or replaced equivalently, and without departing from the spirit and scope of the technical solution of the present invention, should all be covered In scope of the presently claimed invention.

Claims (6)

1. one kind is based on Si-VO2The electrooptic modulator of composite waveguide, which is characterized in that including sequentially connected silicon lining from top to bottom Bottom, silica under-clad layer, ridge waveguide layer, silica top covering and metal electrode layer；The ridge waveguide layer is by centre Protrusion the low flat plate district's groups in raised line area and two sides at, be carved with the slit through waveguide in the upper surface of the ridge waveguide layer, And the slit and the angle of the waveguide longitudinal direction are 5 °~90 °, and vanadium dioxide, institute are filled in the raised line slit in the raised line area It states in the plate slots in plate area filled with silica, it is light to be respectively formed N-type in the two sides of the raised line slit in the raised line area Doped region and p-type lightly doped district are respectively formed N-type heavily doped region in the two sides of the plate slots in the plate area and p-type are heavily doped Miscellaneous area, and the N-type lightly doped district with the N-type heavily doped region in the ipsilateral of slit, the p-type lightly doped district and p-type are heavily doped Miscellaneous area is in the ipsilateral of slit；The metal electrode layer is made of mutual disconnected two parts, and a part on silica through wrapping The through-hole of layer is connected to N-type heavily doped region, and through-hole of the another part through silica top covering is connected to p-type heavily doped region, shape At Ohmic contact, microwave signal is connected when modulating work.
2. according to claim 1 a kind of based on Si-VO2The electrooptic modulator of composite waveguide, which is characterized in that the ridge Shape ducting layer is made of silicon materials, and the raised line is higher than the plate area.
3. according to claim 2 a kind of based on Si-VO2The electrooptic modulator of composite waveguide, which is characterized in that described flat The height in plate area is 20nm~200nm, and the height in the raised line area is 200nm~500nm, and the width in the raised line area is 300nm~700nm.
4. according to claim 1 to 3 a kind of based on Si-VO2The electrooptic modulator of composite waveguide, which is characterized in that The width of the slit is 10nm~300nm, and depth is 200nm~500nm, the depth of the slit and ridge waveguide raised line area Height it is equal.
5. according to claim 1 to 3 a kind of based on Si-VO2The electrooptic modulator of composite waveguide, which is characterized in that The polarity of heavily doped region is identical as the polarity of the lightly doped district, the doping concentration of the N-type lightly doped district and p-type lightly doped district It is below 1 × 1018cm-3, the doping concentration of the N-type heavily doped region and p-type heavily doped region is above 1 × 1019cm-3。
6. according to claim 1 to 3 a kind of based on Si-VO2The electrooptic modulator of composite waveguide, which is characterized in that The spacing on the N-type heavily doped region and p-type heavily doped region and two boundary of raised line area is all larger than 0.2 μm.
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Families Citing this family (14)

* Cited by examiner, † Cited by third party
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CN106908776A (en) * 2017-04-26 2017-06-30 上海交通大学 Laser radar chip emission end based on non-wide silicon waveguide
CN107741656A (en) * 2017-09-21 2018-02-27 北京大学 A kind of electro-optic intensity modulator of the polarization insensitive based on transparent conductive oxide
CN108365303B (en) * 2018-01-23 2020-08-07 中国计量大学 Single-polarization temperature control terahertz switch
CN108803090B (en) * 2018-05-02 2020-10-16 上海交通大学 Electro-optical modulator based on silicon and vanadium dioxide composite waveguide
FR3085369B1 (en) 2018-08-31 2021-01-08 St Microelectronics Crolles 2 Sas ELECTRO-OPTICAL MODULATOR
CN109870833A (en) * 2019-02-28 2019-06-11 上海交通大学 Based on silicon-phase-change material hybrid integrated silicon waveguide multi-stage non-volatile optical attenuator
CN109991766B (en) * 2019-04-29 2024-01-02 电子科技大学 Terahertz wave modulator with high electron mobility transistor loaded in waveguide
CN111061069B (en) * 2020-01-03 2023-05-12 宁波大学 Electro-optic modulator of groove type composite waveguide based on silicon and phase change material
CN114256217A (en) * 2020-09-21 2022-03-29 上海铁路通信有限公司 Temperature control optocoupler
CN112394542A (en) * 2020-11-16 2021-02-23 浙江大学 Integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor
CN113176676B (en) * 2021-04-16 2022-11-15 上海曦智科技有限公司 Optical modulator and optical integrated system
CN113568246B (en) * 2021-07-12 2022-08-16 华中科技大学 Straight waveguide type phase change all-optical Boolean logic device and full-binary logic implementation method thereof
CN114035270B (en) * 2021-11-08 2023-10-13 浙江光特科技有限公司 Method for etching metal in optical waveguide
CN115167014B (en) * 2022-09-02 2022-11-22 之江实验室 C-waveband silicon-based modulator based on vanadium dioxide metamaterial structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103018929A (en) * 2012-12-05 2013-04-03 上海交通大学 Silicon waveguide refractive index calorescence adjusting structure
CN205176417U (en) * 2015-10-09 2016-04-20 电子科技大学 Mid ir modulator in broadband

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8076662B2 (en) * 2008-11-26 2011-12-13 President And Fellows Of Harvard College Electric field induced phase transitions and dynamic tuning of the properties of oxide structures

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103018929A (en) * 2012-12-05 2013-04-03 上海交通大学 Silicon waveguide refractive index calorescence adjusting structure
CN205176417U (en) * 2015-10-09 2016-04-20 电子科技大学 Mid ir modulator in broadband

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Design of Vanadium Dioxide-Based Plasmonic Modulator for Both TE and TM Modes;Jong-Ho Choe等;《IEEE PHOTONICS TECHNOLOGYLETTERS》;20150301;第27卷(第5期);全文
Optically Monitored Electrical Switching in VO2;Petr Markov等;《ACS Photonic》;20150724;第2卷(第8期);全文
Silicon-VO2 Hybrid Electro-optic Modulator;Petr Markov等;《IEEE》;20130614;全文
Wavelength-size hybrid Si-VO2 waveguide electroabsorption optical switches and photodetectors;Arash Joushaghani等;《OPTICS EXPRESS》;20150209;第23卷(第3期);全文

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