FR3085369B1 - ELECTRO-OPTICAL MODULATOR - Google Patents
ELECTRO-OPTICAL MODULATOR Download PDFInfo
- Publication number
- FR3085369B1 FR3085369B1 FR1857846A FR1857846A FR3085369B1 FR 3085369 B1 FR3085369 B1 FR 3085369B1 FR 1857846 A FR1857846 A FR 1857846A FR 1857846 A FR1857846 A FR 1857846A FR 3085369 B1 FR3085369 B1 FR 3085369B1
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- FR
- France
- Prior art keywords
- electro
- optical modulator
- waveguide
- cavity
- present description
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01716—Optically controlled superlattice or quantum well devices
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01791—Quantum boxes or quantum dots
Abstract
La présente description concerne un modulateur électro-optique (1) comprenant un guide d'onde (101) comportant de multiples puits quantiques (103) dans une cavité (105) du guide d'onde (101).The present description relates to an electro-optical modulator (1) comprising a waveguide (101) comprising multiple quantum wells (103) in a cavity (105) of the waveguide (101).
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1857846A FR3085369B1 (en) | 2018-08-31 | 2018-08-31 | ELECTRO-OPTICAL MODULATOR |
US16/539,503 US11327346B2 (en) | 2018-08-31 | 2019-08-13 | Electro-optical modulator and methods of formation thereof |
CN201910816684.5A CN110873972A (en) | 2018-08-31 | 2019-08-30 | Electro-optic modulator and method of forming the same |
CN201921432986.4U CN211236500U (en) | 2018-08-31 | 2019-08-30 | Electro-optical modulator and photonic circuit |
US17/661,356 US11604371B2 (en) | 2018-08-31 | 2022-04-29 | Electro-optical modulator and methods of formation thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1857846A FR3085369B1 (en) | 2018-08-31 | 2018-08-31 | ELECTRO-OPTICAL MODULATOR |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3085369A1 FR3085369A1 (en) | 2020-03-06 |
FR3085369B1 true FR3085369B1 (en) | 2021-01-08 |
Family
ID=65201228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1857846A Active FR3085369B1 (en) | 2018-08-31 | 2018-08-31 | ELECTRO-OPTICAL MODULATOR |
Country Status (3)
Country | Link |
---|---|
US (2) | US11327346B2 (en) |
CN (2) | CN211236500U (en) |
FR (1) | FR3085369B1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11500157B1 (en) | 2019-03-22 | 2022-11-15 | Ciena Corporation | Silicon Selective Epitaxial Growth (SEG) applied to a Silicon on Insulator (SOI) wafer to provide a region of customized thickness |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2619936B1 (en) | 1987-09-01 | 1989-12-01 | Thomson Csf | MODULATOR FOR ELECTROMAGNETIC WAVE, WITH QUANTUM WELLS, AND USE OF THIS MODULATOR AS A POLARIZER |
FR2667165B1 (en) * | 1990-09-21 | 1993-07-02 | Thomson Csf | MULTI-LAYER ELECTROOPTIC MODULATOR OF LIGHT. |
FR2741195B1 (en) * | 1995-11-10 | 1997-12-05 | Thomson Csf | QUANTUM WELL DEVICE AND MANUFACTURING METHOD |
US5661740A (en) * | 1996-04-16 | 1997-08-26 | The United States Of America As Represented By The Secretary Of The Army | TEM mode quantum wire or well structure |
US7457487B2 (en) * | 2004-12-09 | 2008-11-25 | The Board Of Trustees Of The Leland Stanford Junior University | Surface parallel modulator |
FR2882161B1 (en) | 2005-02-11 | 2007-05-11 | Commissariat Energie Atomique | WAVEGUIDE MODULATOR AND ASSOCIATED MODULATION METHOD |
US8390058B2 (en) * | 2009-06-12 | 2013-03-05 | Aplha and Omega Semiconductor Incorporated | Configurations and methods for manufacturing devices with trench-oxide-nano-tube super-junctions |
US8401345B2 (en) * | 2010-06-16 | 2013-03-19 | Oracle America, Inc. | Optical modulator with three-dimensional waveguide tapers |
US8981384B2 (en) * | 2010-08-03 | 2015-03-17 | Sumitomo Electric Industries, Ltd. | Semiconductor device and method for manufacturing same |
JP5812610B2 (en) * | 2011-01-18 | 2015-11-17 | キヤノン株式会社 | Solid-state imaging device and imaging system having solid-state imaging device |
CN102169243A (en) * | 2011-04-28 | 2011-08-31 | 中国科学院半导体研究所 | Submicron waveguide type Ge quantum well electro-optic modulator |
US9952456B2 (en) | 2013-06-09 | 2018-04-24 | Electronic Photonic Ic Inc. (Epic Inc.) | Thin layer photonic integrated circuit based optical signal manipulators |
US9470952B2 (en) | 2013-06-13 | 2016-10-18 | The Regents Of The University Of California | Sub-volt drive 100 GHz bandwidth electro-optic modulator |
US11150494B2 (en) * | 2015-03-05 | 2021-10-19 | Rockley Photonics Limited | Waveguide modulator structures |
US11037839B2 (en) * | 2016-07-13 | 2021-06-15 | Rockley Photonics Limited | Integrated structure and manufacturing method thereof |
US9864136B1 (en) * | 2016-08-09 | 2018-01-09 | Globalfoundries Inc. | Non-planar monolithic hybrid optoelectronic structures and methods |
CN106569350B (en) * | 2016-10-26 | 2019-04-05 | 上海交通大学 | One kind being based on Si-VO2The electrooptic modulator of composite waveguide |
FR3061961B1 (en) * | 2017-01-19 | 2019-04-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | PHOTONIC DEVICE COMPRISING A LASER OPTICALLY CONNECTED TO A SILICON WAVEGUIDE AND METHOD FOR MANUFACTURING SUCH A PHOTONIC DEVICE |
-
2018
- 2018-08-31 FR FR1857846A patent/FR3085369B1/en active Active
-
2019
- 2019-08-13 US US16/539,503 patent/US11327346B2/en active Active
- 2019-08-30 CN CN201921432986.4U patent/CN211236500U/en active Active
- 2019-08-30 CN CN201910816684.5A patent/CN110873972A/en active Pending
-
2022
- 2022-04-29 US US17/661,356 patent/US11604371B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US11604371B2 (en) | 2023-03-14 |
US11327346B2 (en) | 2022-05-10 |
CN110873972A (en) | 2020-03-10 |
CN211236500U (en) | 2020-08-11 |
US20200073153A1 (en) | 2020-03-05 |
US20220252912A1 (en) | 2022-08-11 |
FR3085369A1 (en) | 2020-03-06 |
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