CN110456529A - A kind of resonant cavity type electrooptic modulator based on PN junction - Google Patents
A kind of resonant cavity type electrooptic modulator based on PN junction Download PDFInfo
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- CN110456529A CN110456529A CN201910743215.5A CN201910743215A CN110456529A CN 110456529 A CN110456529 A CN 110456529A CN 201910743215 A CN201910743215 A CN 201910743215A CN 110456529 A CN110456529 A CN 110456529A
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- 239000004038 photonic crystal Substances 0.000 claims abstract description 28
- 239000013078 crystal Substances 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000005611 electricity Effects 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 description 5
- 230000008033 biological extinction Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
- G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a kind of resonant cavity type electrooptic modulator based on PN junction, belongs to technical field of semiconductors, including substrate and silicon based photon crystal plate.It is photonic crystal waveguide among silicon based photon crystal plate, the central area of plate is resonant cavity, and resonant cavity region exterior is equipped with positive electrode and negative electrode.P-doped zone and N-doped zone are distributed in resonant cavity.Electrooptic modulator provided by the invention, is easily integrated and modulation rate is high.
Description
Technical field
The present invention relates to a kind of resonant cavity type electrooptic modulator based on PN junction, belongs to technical field of semiconductors.
Background technique
On optical texture, based on photonic crystal resonant cavity type electrooptic modulator have it is compact-sized, modulation voltage is low
Feature becomes the hot spot studied both at home and abroad in recent years.By changing the carrier concentration in silica-based waveguides, so that it may change waveguide
Effective refractive index and light wave phase, to realize Electro-optical Modulation.Photonic crystal resonant cavity type electric light tune based on P-I-N knot
Device processed, although photonic crystal nanometer resonant cavity size is small, Q value is high, extinction ratio and modulation rate are lower, and in production work
It is difficult to realize in skill.
Summary of the invention
The present invention is to provide a kind of resonant cavity type electrooptic modulator based on PN junction, is easily integrated and modulation rate is high.
In order to achieve the above objectives, the technical scheme adopted by the invention is that: a kind of resonant cavity type electric light tune based on PN junction
Device processed, including substrate and silicon based photon crystal plate, the silicon based photon crystal plate centre is photonic crystal waveguide, plate
Central area be resonant cavity, resonant cavity region exterior be equipped with positive electrode and negative electrode；P-type doping is distributed in the resonant cavity
Area and N-doped zone.
Preferably, except at photonic crystal waveguide, rest part is provided with period row on the silicon based photon crystal plate
The circular airport of column.
Preferably, the resonant cavity is formed by the airport translation pre-determined distance of the periodic arrangement in resonance cavity region, institute
State airport from resonant cavity regional center to resonant cavity outside move.
Preferably, the silicon based photon crystal plate is two-dimentional triangular crystal lattice photonic crystal, with a thickness of 0.2 μm ~ 0.22 μm,
The lattice constant of the two dimension triangular crystal lattice photonic crystal is 400nm ~ 440nm.
Preferably, from positive electricity best negative electrode direction, it has been sequentially distributed p-type heavily doped region, p-type lightly doped district, N-type is gently mixed
Miscellaneous area and N-type heavily doped region；The p-type lightly doped district, N-type lightly doped district are located in resonant cavity.
Preferably, the p-type heavily doped region and N-type heavily doped region doping concentration are 2 × 1019 cm−3~2×1021 cm−3；The p-type lightly doped district doping concentration is 1 × 1017 cm−3~1×1019 cm−3, N-type lightly doped district doping concentration be 6 ×
1016 cm−3~6×1018 cm−3。
Preferably, the electrode uses reverse bias voltage, and P-doped zone is anode, and N-doped zone is cathode；The P
Type doped region voltage is set as 0V, and N-doped zone voltage range is set as 0V ~ 2V.
Preferably, coat is additionally provided on the photonic crystal panel, coat is with a thickness of 3 μm ~ 4 μm.
Compared with prior art, beneficial effects of the present invention: wavy PN junction is introduced at resonant cavity, can accelerate carrier
Flowing, thus accelerate change resonant cavity at refractive index, improve modulation rate；It, both can be with by applying reverse bias voltage
High q-factor is proposed, and its extinction ratio can be improved, reduces loss, is easily integrated, can be applied to semiconductor technology production.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the resonant cavity type electrooptic modulator based on PN junction provided in an embodiment of the present invention；
Fig. 2 shows that resonance frequency and effective refractive index are bent with electric field strength variation at resonant cavity in the embodiment of the present invention
Line；
Fig. 3 shows transmission spectrum of the TE light of 1550.5 ~ 1551.0nm wave band when applied voltage is respectively 0V and 1.2V；
Fig. 4 is " logical " state time domain steady state profile；
Fig. 5 is " disconnected " state time domain steady state profile；
Fig. 6 is the mode distributions figure in the embodiment of the present invention at resonant cavity.
Wherein: 1- substrate, 2- silicon based photon crystal plate, 3- airport, 4- negative electrode, 5- positive electrode, 6- resonant cavity, 7-
N-type heavily doped region, 8-N type lightly doped district, 9-P type lightly doped district, 10-P type heavily doped region, 11- input waveguide, 12- output wave
It leads.
Specific embodiment
Essence in order to better understand the present invention is combined with specific embodiments below made the present invention with attached drawing further
It illustrates.
The present invention provides a kind of resonant cavity type electrooptic modulator based on PN junction, structure as shown in Figure 1, include substrate 1,
Silicon based photon crystal plate 2.With a thickness of 2 μm -3 μm, silicon based photon crystal plate 2 uses substrate 1 with a thickness of 0.2 μm ~ 0.22 μm
Two-dimentional triangular crystal lattice photonic crystal.The lattice constant of two-dimentional triangular crystal lattice photonic crystal is 400nm ~ 440nm.Silicon based photon crystal
Contain coat on plate 2, with a thickness of 3 μm -4 μm.
Photonic crystal waveguide is introduced among plate, wherein one end is input waveguide 11, and the other end is output waveguide 12.Silicon substrate
The central area of photonic crystal panel 2 introduces regular hexagon resonant cavity 6, is adulterated at resonant cavity 6 by p-type and N-type various concentration
Introduce wavy PN junction.Plate two sides are respectively equipped with negative electrode 4 and positive electrode 5.Electrode uses reverse bias voltage, P-doped zone
For anode, N-doped zone is cathode.P-doped zone voltage is set as 0V, and N-doped zone voltage range is set as 0V ~ 2V, electricity
Pole material is metallic aluminium.
Except at photonic crystal waveguide, rest part is provided with the circular of periodic arrangement on silicon based photon crystal plate 2
Airport 3.In 6 region of resonant cavity, airport 3 from resonant cavity regional center to resonant cavity outside move.Photonic crystal waveguide with
Airport 3 between positive electrode 5 is translated to 5 direction of positive electrode, and the airport 3 between photonic crystal waveguide and negative electrode 4 is to negative
The translation of 4 direction of electrode, forms resonant cavity 6.
N-type heavily doped region 7, N-type lightly doped district 8, p-type lightly doped district 9 have been sequentially distributed between positive electrode 5 and negative electrode 4
With p-type heavily doped region 10.P-type lightly doped district 9, N-type lightly doped district 10 are located in resonance region 6.P-type heavily doped region 10 and N-type weight
7 doping concentration of doped region is 2 × 1019 cm−3~2×1021 cm−3, 9 doping concentration of p-type lightly doped district is 1 × 1017 cm−3~1
×1019 cm−3, 8 doping concentration of N-type lightly doped district is 6 × 1016 cm−3~6×1018 cm−3。
The working principle of the invention: incident light enters from input waveguide 11, when by resonant cavity 6, if extra electric field
Voltage be zero, incident light is unsatisfactory for the resonance frequency of resonant cavity 6, will not be coupled into resonant cavity, therefore incident light can penetrate
Modulator is in " logical " state；If changing the voltage of extra electric field, according to carrier dispersion effect, doped region refractive index can occur
Variation, therefore the refractive index at resonant cavity can be changed, to change the resonance frequency of resonant cavity 6, when incident light meets resonant cavity
Resonance frequency when, it is in " disconnected " state that incident light, which will be coupled into resonant cavity, therefore incident light will not penetrate modulator, logical
The size of adjustment extra electric field is crossed, realizes the modulation to incident light.
As the preferred embodiment of the present invention, substrate 1 and coat select earth silicon material to be made, and effective refractive index is
1.445, height is respectively 2 μm and 3.5 μm.
The effective refractive index of silicon based photon crystal plate 2 is 3.45, and with a thickness of 210nm, length is about 90 μm, and width is less than
10μm；The lattice constant of two-dimentional triangular crystal lattice photonic crystal is 420nm.By making w1 wave to plate two sides translating sections airport
It leads, w2 duct width respectively may be about 760nm, 710nm；The hexagon resonance cavity region of central area has included tricyclic airport 3,
Airport from resonant cavity regional center to resonant cavity outside mobile pre-determined distance form resonant cavity.Photonic crystal waveguide and positive electrode
Between airport, along photonic crystal waveguide to positive electrode direction translate.First layer airport close to resonant cavity center is to just
The pre-determined distance of electrode translation is 3nm, second layer 6nm, and the pre-determined distance close to the third layer airport of positive electrode is 9nm；
Airport between photonic crystal waveguide and negative electrode is translated along photonic crystal waveguide to negative electricity extreme direction.In resonant cavity
The pre-determined distance that the first layer airport of the heart is translated to negative electrode is 3nm, second layer 6nm, close to the third of negative electrode electrodes
The pre-determined distance of layer airport is 9nm
The doping concentration of p-type heavily doped region 10 and N-type heavily doped region 7 is 1.9 × 1020 cm−3；P-type lightly doped district 9 is adulterated
Concentration is 1.05 × 1018 cm−3, 8 doping concentration of N-type lightly doped district is 6.2 × 1017 cm−3。
By directly applying applied voltage in the two sides of photonic crystal panel 2, changes Refractive Index of Material at resonant cavity, utilize
Carrier Profile calculates at available resonant cavity as shown in Figure 2 resonance frequency and effective refractive index with additional by formula
Electric field strength change curve.
When the incident light beam strikes input waveguide 11 of the TE mould of 1550.5 ~ 1551.0nm wave band, simulation result is shown such as Fig. 3 institute
Show, when voltage is 0V, the resonance wavelength of resonant cavity is about 1550.68nm, and transmissivity at this time is about 90%, is " logical " state.
When voltage is 1.2V, resonance frequency is displaced, 1550.68nm Thewavelengthtransmittance only 0.075%, is " disconnected " state.Through counting
It is about 30.8dB that calculation, which can obtain extinction ratio, and loss only has 0.5dB.Pass through the calculated time domain stable state of Finite-Difference Time-Domain Method point simultaneously
Shown in cloth Fig. 4 and Fig. 5, the modulated response time is about 140ps, and modulation rate is about 7GHz.And existing electrooptic modulator is in delustring
When than for 30dB, modulation rate is only 3GHz.
The present invention introduces wavy PN junction at photonic crystal resonant cavity, bright by the mould field chart at Fig. 6 resonant cavity, passes through
Apply reverse bias voltage, which has extraordinary resonance characteristic, higher modulation rate and Q value both may be implemented,
Also there are higher extinction ratio and lower loss, and the device size is small is easily integrated, can be applied to semiconductor technology production.
Although should be pointed out that invention has been described by above embodiment, the present invention can also have other
Numerous embodiments.Without departing from the spirit and scope of the present invention, those skilled in the art obviously can be right
The present invention makes various corresponding changes and modifications, but these change and modification all should belong to appended claims of the present invention and
In the range of its equivalent is protected.
Claims (8)
1. a kind of resonant cavity type electrooptic modulator based on PN junction, it is characterised in that: flat including substrate and silicon based photon crystal
Plate, is photonic crystal waveguide among the silicon based photon crystal plate, and the central area of plate is resonant cavity, outside resonance cavity region
Portion is equipped with positive electrode and negative electrode；P-doped zone and N-doped zone is distributed in the resonant cavity.
2. the resonant cavity type electrooptic modulator based on PN junction according to claim 1, it is characterised in that: the silicon based photon is brilliant
Except at photonic crystal waveguide, rest part is provided with the circular airport of periodic arrangement on body plate.
3. the resonant cavity type electrooptic modulator based on PN junction according to claim 2, it is characterised in that: the resonant cavity is by humorous
The airport translation pre-determined distance of periodic arrangement in vibration cavity region is formed, and the airport is from resonant cavity regional center to resonance
It is mobile outside chamber.
4. the resonant cavity type electrooptic modulator based on PN junction according to claim 2, it is characterised in that: the silicon based photon is brilliant
Body plate is two-dimentional triangular crystal lattice photonic crystal, with a thickness of 0.2 μm ~ 0.22 μm, the crystalline substance of the two dimension triangular crystal lattice photonic crystal
Lattice constant is 400nm ~ 440nm.
5. the resonant cavity type electrooptic modulator based on PN junction according to claim 1, it is characterised in that: from positive electricity best negative electricity
Extreme direction has been sequentially distributed p-type heavily doped region, p-type lightly doped district, N-type lightly doped district and N-type heavily doped region；The p-type is gently mixed
Miscellaneous area, N-type lightly doped district are located in resonant cavity.
6. the resonant cavity type electrooptic modulator based on PN junction according to claim 5, it is characterised in that: the p-type heavy doping
Area and N-type heavily doped region doping concentration are 2 × 1019 cm−3~2×1021 cm−3；The p-type lightly doped district doping concentration is 1
×1017 cm−3~1×1019 cm−3, N-type lightly doped district doping concentration is 6 × 1016 cm−3~6×1018 cm−3。
7. the resonant cavity type electrooptic modulator based on PN junction according to claim 1, it is characterised in that: the electrode is using anti-
To bias voltage, P-doped zone is anode, and N-doped zone is cathode；The P-doped zone voltage is set as 0V, n-type doping
Area's voltage range is set as 0V ~ 2V.
8. the resonant cavity type electrooptic modulator based on PN junction according to claim 1, it is characterised in that: the photonic crystal is flat
Coat is additionally provided on plate, coat is with a thickness of 3 μm ~ 4 μm.
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| CN201910743215.5A CN110456529A (en) | 2019-08-13 | 2019-08-13 | A kind of resonant cavity type electrooptic modulator based on PN junction |
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| CN201910743215.5A CN110456529A (en) | 2019-08-13 | 2019-08-13 | A kind of resonant cavity type electrooptic modulator based on PN junction |
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Cited By (2)
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| CN111175894A (en) * | 2020-01-14 | 2020-05-19 | 北京邮电大学 | Electro-optical modulator based on low-refractive-index polymer photonic crystal microcavity |
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Application publication date: 20191115 |