CN105388638A - Silicon waveguide thermo-optic adjusting structure - Google Patents
Silicon waveguide thermo-optic adjusting structure Download PDFInfo
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- CN105388638A CN105388638A CN201510982481.5A CN201510982481A CN105388638A CN 105388638 A CN105388638 A CN 105388638A CN 201510982481 A CN201510982481 A CN 201510982481A CN 105388638 A CN105388638 A CN 105388638A
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- waveguide
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- thermo
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention relates to a silicon waveguide thermo-optic adjusting structure. The structure comprises a substrate, a lower cladding, a waveguide layer, an upper cladding and an electrode layer from bottom to top in sequence, wherein the lower cladding is made of silicon dioxide, the waveguide layer is made of a silicon material with high index of refraction, the upper cladding is made of a material with low index of refraction, and the electrode layer is composed of metal electrodes located on the two sides respectively and a middle metal grid electrode; the waveguide layer is a ridge waveguide, a waveguide thermal resistance structure is formed by a middle convex inner-ridge lightly doped zone and slab-shaped outer-ridge heavily doped zones on the two sides, and the heavily doped zones are communicated with the metal electrodes through metal through holes in the upper cladding. When the control electrode is loaded with voltage, an electric field is formed in the waveguide, and the concentration of a carrier is changed, so that the electrical resistivity of a silicon waveguide layer is adjusted. Under constant driving voltage, the thermal power of a resistor changes, and the effective refractive index of the silicon waveguide can be adjusted based on the thermo-optic effect.
Description
Technical field
The present invention relates to integrated optics, particularly a kind of silicon waveguide thermo-optical adjustment structure.
Background technology
Photoelectric chip integrated level was more and more higher in recent years, and device size is also more and more less.Silicon materials are compared other material, due to itself and the high index-contrast between air and silicon dioxide, have very strong light field limitation capability, can make submicron order fiber waveguide device.Silicon photonic device is compatible with ripe CMOS technology, has the feature of low preparation cost, easily large-scale integrated, is the important trend of following optical device development.And be widely studied based on the passive of silicon materials and active optical component and realized, as wave filter, shunt, modulator etc.
Silicon materials mainly utilize plasma dispersion effect and thermo-optic effect to realize ducting layer adjustable refractive index.The people such as QianfanXu propose p-i-n electricity adjustment structure, make use of carrier dispersion effect, inject charge carrier by forward bias and realize ducting layer variations in refractive index, in OPTICSEXPRESS (Vol.12, No.2), " 12.5Gbit/scarrier-injection-basedsiliconmicro-ringsilico nmodulators " is described in detail.The people such as AnshengLiu propose p-n electricity adjustment structure, utilize carrier dispersion effect, extract charge carrier by reverse biased and change ducting layer refractive index, in OPTICSEXPRESS (Vol.15, No.2), " High-speedopticalmodulationbasedoncarrierdepletiononsili conwaveguide " is described in detail.The people such as JaimeCardensa make metal fever resistance above waveguide, utilize thermo-optic effect, waveguide temperature is changed by powering up heating heat conduction, and then regulate silicon waveguide index, in OPTICSEXPRESS (Vol.18, No.25), " High-speedopticalmodulationbasedoncarrierdeptiononsilico nwaveguide " is described in detail." Enhancednonlinearthermo-opticeffectinsiliconmicroringres onatorswithp-i-pmicroheatersfornon-reciprocaltransmissio n " that the people such as recent anteclise army deliver on OpticalFiberCommunicationConference is upper proposes waveguide thermal resistance heating silicon-based micro ring structure, utilize ducting layer self as resistance, after outside energising, heat directly acts on ducting layer, regulates waveguide index by thermo-optic effect.
Summary of the invention
The invention provides a kind of silicon waveguide thermo-optical adjustment structure, above-mentioned waveguide thermal resistance architecture basics increases metal control gate, fixing driving voltage is applied to waveguide thermal resistance, control voltage is applied to metal gates.By changing control voltage, realize the adjustment to silicon waveguide index, the final adjustment realized passing through this structure output light.Adopt this heat to adjust the advantage of structure to be that driving voltage is separated with control voltage, drive electrode provides resistance heating power, and without quiescent dissipation on control electrode, is easy to integrated with control circuit.
Technical solution of the present invention is as follows:
A kind of silicon waveguide thermo-optical adjustment structure, its special electricity is, comprise substrate successively from bottom to up, under-clad layer, ducting layer, top covering and electrode layer, the material of described under-clad layer is silicon dioxide, the material of ducting layer is high-index material silicon, the material of top covering is low-index material, described electrode layer is made up of the metal electrode and middle metal gates separating from both sides, described ducting layer is ridge waveguide, waveguide thermal resistance structure is formed by the heavily doped region of the plate shaped ectoloph in light doping section and both sides of ridge in the convex of centre, described heavily doped region is communicated with described metal electrode by the metal throuth hole of described top covering.
In the convex of described ridge waveguide, the height of the heavily doped region of the width of the light doping section of ridge, height and ectoloph meets light single mode transport condition, and in described convex, the doping content of the light doping section of ridge is less than 10
17cm
-3, the doping content of the heavily doped region of described ectoloph is greater than 10
18cm
-3, doping type is p-type or N-shaped, forms p
+-p
--p
+or n
+-n
--n
+electric resistance structure.
The material of described electrode layer is aluminium, copper or gold.
The using method of above-mentioned silicon waveguide thermo-optical adjustment structure, the driving voltage fixed is applied between two described metal electrodes, control voltage is applied at described metal gates, by changing this control voltage, realize the adjustment to silicon waveguide index, the final adjustment realized passing through structure output light of the present invention.
The invention has the beneficial effects as follows:
Certain driving voltage is loaded to waveguide thermal resistance, to metal gates Loading Control voltage, for producing electric field on ducting layer.By changing control voltage, the electric field acting on ducting layer being changed, regulating the resistivity of waveguide thermal resistance, thus change resistance heated power, realize the adjustment to silicon waveguide index, final realization is to the adjustment by structure output light of the present invention.
High-power driving electrode can be separated with small-signal control electrode by thermo-optical adjustment structure of the present invention, thermo-optical is regulated and controled and realizes more easily by integrated circuit, have extensive prospect in integrated optics.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of silicon waveguide thermo-optical adjustment structure of the present invention.
Fig. 2 is the schematic diagram that the present invention is applied to silicon-based micro ring structure.
Fig. 3 is under different control voltage, electric current and driving voltage graph of a relation on silicon waveguide resistance.
Fig. 4 is under 15V driving voltage, silicon waveguide resistance value and heating power and control voltage graph of a relation.
Fig. 5 is under 15V driving voltage, the resonance wavelength shift amount of silicon-based micro ring resonator and the graph of a relation of control voltage.
Fig. 6 is the micro-ring resonator experiment test device schematic diagram being integrated with waveguide thermo-optical adjustment structure.
Fig. 7 is under 15V driving voltage, when micro-ring waveguide thermo-optical adjustment structure loads the square wave alternating-current control voltage of 5V10KHz, and figure time response of output optical signal.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail, should be appreciated that exemplifying embodiment described herein is only for instruction and explanation of the present invention, is not intended to limit the present invention.
Fig. 1 is the schematic diagram of silicon waveguide thermo-optical adjustment structure of the present invention, as shown in Figure 1, silicon waveguide thermo-optical adjustment structure of the present invention, , comprise substrate 1 successively from bottom to up, under-clad layer 2, ducting layer 3, top covering 4 and electrode layer 5, the material of described under-clad layer 2 is silicon dioxide, the material of ducting layer 3 is high-index material silicon, the material of top covering 4 is low-index material, described electrode layer 5 is made up of the metal electrode 7 and middle metal gates 6 separating from both sides, described ducting layer 3 is ridge waveguide, waveguide thermal resistance structure is formed by the heavily doped region 8 of the plate shaped ectoloph in light doping section 9 and both sides of ridge in the convex of centre, described heavily doped region 8 is communicated with described metal electrode 7 by the metal throuth hole 10 of described top covering 4.
The interior ridge width of described ridge waveguide, interior ridge height and ectoloph height meet light single mode transport condition, and the doping content of described interior ridge is less than 10
17cm
-3, the doping content of described ectoloph is greater than 10
18cm
-3, doping type is p-type or N-shaped, forms p
+-p
--p
+or n
+-n
--n
+electric resistance structure.
Described electrode layer is connected with external power source, and the material of this electrode layer is aluminium, copper, gold.
The substrate 1 of the present embodiment is silicon, and under-clad layer 2 makes on substrate 1; The thickness of under-clad layer is 2 μm; This under-clad layer is silicon dioxide, provides constraints to the light of waveguide; Ducting layer 3 is produced on under-clad layer 2; The thickness of ducting layer 3 is 0.22 μm; The material of this ducting layer is silicon; Ducting layer is convex ridge type structure, and the width of ridge is 0.5 μm, interior ridge height 0.22 μm, ectoloph height 0.06 μm; Ridge district and waveguide core layer are p-type light doping section 9, doping content 10
15cm
-3; Both sides flat board is p-type heavily doped region 8, and width is 4 μm, doping content 10
20cm
-3; Ridged edge standoff distance 0.3 μm in edge, heavily doped region and waveguide; Top covering 4 is produced on ducting layer 3; The thickness of top covering 4 is 2.57 μm; The material of this top covering is silicon dioxide, provides constraints, shield simultaneously to waveguide to the light in ducting layer 3, and makes it to be easy to make electrode; Metal gates 6 is manufactured with, as the grid of regulating resistance above light doping section 9; The through hole 10 of both sides connects waveguide heavily doped region 8 and metal electrode 7; The width of through hole 10 is 2 μm, and material is aluminium.
Electrode layer 5 is produced on top covering 4; The thickness of electrode layer 5 is 2 μm, is connected and is connected with external power source with the metal in through hole 10; The material of electrode layer 5 is aluminium.
During use, external power source drive voltage signal loads on the both sides metal electrode 7 be connected with through hole, and electric current produces heat by ducting layer.
Under constant driving voltage, to metal gates 6 Loading Control voltage, for producing electric field on ducting layer.By changing control voltage, the electric field acted on ducting layer being changed, affects the resistivity of silicon waveguide, ohmically thermal power is changed, thus realize the adjustment to silicon waveguide index, the final adjustment realized passing through this structure output light.
Embodiment
Fig. 2 is the embodiment that voltage controlled thermal resistance is applied to silicon-based micro ring.11st district and 12nd district are p heavily doped region, and 13rd district are that metal controls grid region.Micro-ring radius is 10 μm, and directional couple section length is 3.8 μm.
Under Figure 3 shows that different control voltage, the electric current of silicon waveguide resistance and the graph of a relation of driving voltage.As seen from the figure, be carried in the control voltage on metal gates and can play effective control to the resistance value of ducting layer.
Fig. 4 is under 15V driving voltage, silicon waveguide resistance value and heating power and control voltage graph of a relation.
Fig. 5 is under 15V driving voltage, the side-play amount of the resonance wavelength of silicon-based micro ring resonator and the graph of a relation of control voltage.When control voltage is 0V, micro-ring resonant is in 1549.6nm place, and when metal adding 11V voltage, tuning-points is displaced to 1548.6nm place, and tuning-points side-play amount is-0.9nm.
Fig. 6 is the experiment test device schematic diagram of the micro-ring resonator of waveguide thermo-optical adjustment structure.Represented by dotted arrows light path connects, and solid line represents circuit and connects.
The first step: by the current-voltage curve of digital electronic ammeter test waves heat conduction resistance.
Second step: direct voltage source, for providing the driving voltage of thermal resistance, is 15V constant voltage in this example; AWG (Arbitrary Waveform Generator) is used for metal gates Loading Control voltage, in this example, and the control voltage that metal gates loads: the square wave of peak-to-peak value 5V, frequency 10KHz.Tunable laser exports and couples light to test chip, and output optical signal after photodetector, then accesses oscillograph.When laser instrument output light is near micro-ring resonant centre wavelength, its time response diagram of observable.
Fig. 7 is driving voltage 15V, when micro-ring waveguide thermo-optical adjustment structure loads the square wave alternating-current control voltage of 5V10KHz, and figure time response of output optical signal.Upper figure is light signal figure time response, and centre is the time domain waveform of control voltage; Lower-left figure is rising edge, display rising edge time 0.729 μ s; Bottom-right graph is negative edge, 7.887 μ s between display decline time delay.
Claims (4)
1. a silicon waveguide thermo-optical adjustment structure, it is characterized in that, comprise substrate (1) from bottom to up successively, under-clad layer (2), ducting layer (3), top covering (4) and electrode layer (5), the material of described under-clad layer (2) is silicon dioxide, the material of ducting layer (3) is high-index material silicon, the material of top covering (4) is low-index material, described electrode layer (5) is made up of the metal electrode (7) and middle metal gates (6) separating from both sides, described ducting layer (3) is ridge waveguide, waveguide thermal resistance structure is formed by the heavily doped region (8) of the plate shaped ectoloph in light doping section (9) and both sides of ridge in the convex of centre, described heavily doped region (8) is communicated with described metal electrode (7) by the metal throuth hole (10) of described top covering (4).
2. silicon waveguide thermo-optical adjustment structure according to claim 1, it is characterized in that, in the convex of described ridge waveguide, the height of the heavily doped region (8) of the width of the light doping section (9) of ridge, height and ectoloph meets light single mode transport condition, and in described convex, the doping content of the light doping section (9) of ridge is less than 10
17cm
-3, the doping content of the heavily doped region (8) of described ectoloph is greater than 10
18cm
-3, doping type is p-type or N-shaped, forms p
+-p
--p
+or n
+-n
--n
+electric resistance structure.
3. silicon waveguide thermo-optical adjustment structure according to claim 1, is characterized in that, the material of described electrode layer is aluminium, copper or gold.
4. the using method of silicon waveguide thermo-optical adjustment structure according to claim 1, it is characterized in that the driving voltage applying to fix between described two metal electrodes (7), control voltage is applied at described metal gates (6), by changing this control voltage, realize the adjustment to silicon waveguide index, the final adjustment realized exporting light.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510982481.5A CN105388638B (en) | 2015-12-24 | 2015-12-24 | A kind of hot light adjustment structure of silicon waveguide |
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|---|---|---|---|
| CN201510982481.5A CN105388638B (en) | 2015-12-24 | 2015-12-24 | A kind of hot light adjustment structure of silicon waveguide |
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| CN105388638A true CN105388638A (en) | 2016-03-09 |
| CN105388638B CN105388638B (en) | 2018-01-12 |
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Cited By (6)
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| JP2018511820A (en) * | 2015-03-12 | 2018-04-26 | インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ | Electro-optic and thermo-optic modulators |
| CN109314678A (en) * | 2016-06-28 | 2019-02-05 | 华为技术有限公司 | Signal generator and transmitter |
| CN110109267A (en) * | 2018-02-01 | 2019-08-09 | 上海硅通半导体技术有限公司 | A kind of thermal-optical type phase modulating structure |
| CN111628036A (en) * | 2020-07-30 | 2020-09-04 | 武汉光谷信息光电子创新中心有限公司 | Photoelectric detector with resonant waveguide structure |
| CN112748588A (en) * | 2019-10-30 | 2021-05-04 | 台湾积体电路制造股份有限公司 | Modulator device and method of forming the same |
| CN115166898A (en) * | 2022-07-21 | 2022-10-11 | 西安电子科技大学 | Electro-optical modulation integrated waveguide structure |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018511820A (en) * | 2015-03-12 | 2018-04-26 | インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ | Electro-optic and thermo-optic modulators |
| CN109314678A (en) * | 2016-06-28 | 2019-02-05 | 华为技术有限公司 | Signal generator and transmitter |
| CN109314678B (en) * | 2016-06-28 | 2020-10-27 | 华为技术有限公司 | Signal generator and transmitter |
| CN110109267A (en) * | 2018-02-01 | 2019-08-09 | 上海硅通半导体技术有限公司 | A kind of thermal-optical type phase modulating structure |
| CN112748588A (en) * | 2019-10-30 | 2021-05-04 | 台湾积体电路制造股份有限公司 | Modulator device and method of forming the same |
| CN111628036A (en) * | 2020-07-30 | 2020-09-04 | 武汉光谷信息光电子创新中心有限公司 | Photoelectric detector with resonant waveguide structure |
| WO2022021724A1 (en) * | 2020-07-30 | 2022-02-03 | 武汉光谷信息光电子创新中心有限公司 | Photoelectric detector with resonant waveguide structure |
| CN115166898A (en) * | 2022-07-21 | 2022-10-11 | 西安电子科技大学 | Electro-optical modulation integrated waveguide structure |
| CN115166898B (en) * | 2022-07-21 | 2024-02-06 | 西安电子科技大学 | Electro-optical modulation integrated waveguide structure |
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