CN110993708B - Silicon photoelectric detector with current amplification function - Google Patents
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- CN110993708B CN110993708B CN201911176655.3A CN201911176655A CN110993708B CN 110993708 B CN110993708 B CN 110993708B CN 201911176655 A CN201911176655 A CN 201911176655A CN 110993708 B CN110993708 B CN 110993708B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 150
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 150
- 239000010703 silicon Substances 0.000 title claims abstract description 150
- 230000003321 amplification Effects 0.000 title claims abstract description 18
- 238000003199 nucleic acid amplification method Methods 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 230000000694 effects Effects 0.000 abstract description 7
- 238000001514 detection method Methods 0.000 abstract description 5
- 230000001502 supplementing effect Effects 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- General Physics & Mathematics (AREA)
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Abstract
The invention provides a silicon photoelectric detector with current amplification effect, comprising: a silicon optical waveguide region; a first heavily doped N-type silicon region and a second heavily doped N-type silicon region; the first N-type heavily doped silicon region and the second N-type heavily doped silicon region are respectively positioned on two sides of the silicon optical waveguide region; a P-type heavily doped silicon region and a third N-type heavily doped silicon region; wherein the P-type heavily doped silicon region is disposed between the first N-type heavily doped silicon region and the third N-type heavily doped silicon region; a first metal electrode electrically connected to the P-type heavily doped silicon region; a second metal electrode electrically connected to the second N-type heavily doped silicon region; and a third metal electrode electrically connected to the third heavily N-doped silicon region. According to the invention, by setting the doping type and the doping concentration of each region, a larger current can be obtained on the electrode of the third N-type heavily doped silicon region by supplementing a small current, and the overall detection precision can be improved.
Description
Technical Field
The invention relates to the field of photoelectric detection, in particular to a silicon photoelectric detector with a current amplification function.
Background
In recent years, with the rapid development of the internet of things, the optical fiber communication system is used as an important support for the internet of things, and the development of the optical fiber communication system is more emphasized. In the field of long-distance backbone networks, with the maturity and development of optical transmission technology, the construction of trunk transmission networks has been hot in the world, and the transmission bandwidth and the transmission capacity are rapidly developed.
With the development of optical fiber communication systems, the development of optical devices also faces opportunities and challenges, and how to develop optical devices with excellent performance and low price has become a primary problem. Silicon-based optoelectronic devices have the advantages of easy integration, low process cost and the like, and have attracted extensive attention of researchers in recent years. Silicon (Si) material is used as a traditional material in the field of microelectronics, has incomparable advantages of other materials in processing technology and manufacturing cost, and the silicon-based photoelectron integration technology is produced at the same time. The photodetector, one of the important representative elements in silicon-based optoelectronic integration technology, functions to convert an incident optical signal into an electrical signal for analysis by subsequent signal processing circuitry. However, when an incident optical signal of the conventional photoelectric detector is weak, the corresponding converted electrical signal is also small, and the detection accuracy is easily influenced.
Disclosure of Invention
In view of the above, an object of the embodiments of the present invention is to provide a silicon photodetector with current amplification, which can generate the current amplification effect based on the photodetection.
The embodiment of the invention provides a silicon photoelectric detector with a current amplification effect, which comprises:
a silicon optical waveguide region;
a first heavily doped N-type silicon region and a second heavily doped N-type silicon region; the first N-type heavily doped silicon region and the second N-type heavily doped silicon region are respectively positioned on two sides of the silicon optical waveguide region and are connected with the silicon optical waveguide region;
a P-type heavily doped silicon region and a third N-type heavily doped silicon region; the P-type heavily doped silicon region is arranged between the first N-type heavily doped silicon region and the third N-type heavily doped silicon region and is connected with the first N-type heavily doped silicon region and the third N-type heavily doped silicon region;
a first metal electrode electrically connected to the P-type heavily doped silicon region;
a second metal electrode electrically connected to the second N-type heavily doped silicon region;
and a third metal electrode electrically connected to the third heavily N-doped silicon region.
Preferably, the silicon optical waveguide region is an intrinsic silicon region.
Preferably, the doping concentration of the first heavily N-type silicon region is higher than the doping concentration of the heavily P-type silicon region.
Preferably, the thickness of the P-type heavily doped silicon region is thinner than that of the first N-type heavily doped silicon region.
Preferably, in operation, the voltage applied to the first metal electrode is higher than the voltage applied to the second metal electrode, and the voltage applied to the third metal electrode is higher than the voltage applied to the first metal electrode, so that the PN junction between the third N-type heavily doped silicon region and the P-type heavily doped silicon region is reversely biased, and the PN junction between the P-type heavily doped silicon region and the first N-type heavily doped silicon region is positively biased in the case of light incidence.
According to the silicon photoelectric detector with the current amplification effect, provided by the embodiment of the invention, by setting the doping type and the doping concentration of each region, a small current can be supplemented to the first metal electrode, and a larger current can be obtained on the electrode of the third N-type heavily doped silicon region, so that the current amplification effect is realized, the integral detection precision can be improved, and the actual use requirement can be met.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a silicon photodetector with current amplification provided in an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present invention, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
Referring to fig. 1, an embodiment of the invention provides a silicon photodetector with current amplification, including:
a silicon optical waveguide region 10.
Wherein the silicon optical waveguide region 10 is made of intrinsic silicon, and a waveguide region for optical transmission is formed thereon.
A first heavily N-doped silicon region 20 and a second heavily N-doped silicon region 30; the first heavily doped N-type silicon region 20 and the second heavily doped N-type silicon region 30 are respectively located at two sides of the silicon optical waveguide region 10 and connected to the silicon optical waveguide region 10.
Wherein first heavily N-doped silicon region 20 and second heavily N-doped silicon region 30 can be formed by doping silicon with a group five element, such as nitrogen, phosphorous, arsenic. Of course, the actual doping elements and concentrations can be set according to actual needs, and the invention is not particularly limited.
A P-type heavily doped silicon region 40 and a third N-type heavily doped silicon region 50; the P-type heavily doped silicon region 40 is disposed between the first N-type heavily doped silicon region 20 and the third N-type heavily doped silicon region 50, and is connected to the first N-type heavily doped silicon region 20 and the third N-type heavily doped silicon region 50.
Wherein heavily P-doped silicon region 40 can be formed by doping silicon with a five-group element, such as boron, aluminum. Of course, the actual doping elements and concentrations can be set according to actual needs, and the invention is not particularly limited.
A first metal electrode 60 electrically connected to the heavily P-doped silicon region 40;
a second metal electrode 70 electrically connected to the second heavily N-type doped silicon region 30;
a third metal electrode 80 electrically connected to the third heavily N-doped silicon region 50.
The metal electrode may be made of aluminum, silver or other alloy materials, and the invention is not limited in particular.
It should be noted that the doping concentration of the first heavily N-type silicon region 20 is higher than the doping concentration of the heavily P-type silicon region 40.
It should be noted that the thickness of the P-type heavily doped silicon region 40 is set to be thinner, that is, the thickness of the P-type heavily doped silicon region 40 is thinner at least compared to the first N-type heavily doped silicon region 20.
The working principle of the invention is detailed below:
in this embodiment, in operation, a voltage is applied to the silicon photodetector through the first metal electrode 60, the second metal electrode 70, and the third metal electrode 80. Wherein the voltage applied at the first metal electrode 60 is higher than the voltage applied at the second metal electrode 70, and the voltage applied at the third metal electrode 80 is higher than the voltage applied at the first metal electrode 60, such that the PN junction between the third heavily N-doped silicon region 50 and the heavily P-doped silicon region 40 is reverse biased, and the PN junction between the heavily P-doped silicon region 40 and the first heavily N-doped silicon region 20 is forward biased in case of light incidence.
When the silicon optical waveguide region 10 has no light input, no current is generated since the silicon optical waveguide region 10 is an intrinsic region. The PN junction between the third heavily N-doped silicon region 50 and the heavily P-doped silicon region 40 is reverse biased, so no current is generated.
When the silicon optical waveguide region 10 has light input, it will generate photo-generated carriers, which is equivalent to the silicon optical waveguide region 10 becoming a conductor, so that the two regions of the first heavily doped N-type silicon region 20 and the second heavily doped N-type silicon region 30 are conducted. Since the electron concentration of the first N-type heavily doped silicon region 20 is greater than that of the P-type heavily doped silicon region 40, and the P-type heavily doped silicon region 40 is made thinner, and the PN junction between the P-type heavily doped silicon region 40 and the first N-type heavily doped silicon region 20 is forward biased under the condition of light incidence, majority carriers (electrons) of the first N-type heavily doped silicon region 20 and majority carriers (holes) of the P-type heavily doped silicon region 40 easily diffuse toward each other across the emission structure, but since the concentration of electrons of the first N-type heavily doped silicon region 20 is greater than that of holes of the P-type heavily doped silicon region 40, the current passing through the PN junction between the P-type heavily doped silicon region 40 and the first N-type heavily doped silicon region 20 is substantially electron current. And because P-type heavily doped silicon region 40 is very thin, and the PN junction between third N-type heavily doped silicon region 50 and P-type heavily doped silicon region 40 is reversely biased, most of the electrons injected into P-type heavily doped silicon region 40 can cross the gap between third N-type heavily doped silicon region 50 and P-type heavily doped silicon region 40The PN junction enters the third heavily N-doped Si region 50 to form a first current I1Only a few electrons will recombine with holes in the heavily P-doped silicon region 40, and the recombined holes are recharged by the first metal electrode 60 of the heavily P-doped silicon region 40, wherein the second current for recharging is I2. The current I on the second heavily doped N-type Si region 30 can be obtained according to the principle of current continuity3＝I1+I2. That is, the first metal electrode 60 is supplemented with a very small I2A larger I can be obtained on the electrode of the third heavily N-doped Si region 501Thereby producing a current amplification effect.
In summary, in the silicon photodetector with current amplification provided by the embodiment of the invention, the doping type and the doping concentration of each region are set, so that a very small I can be added to the first metal electrode 602A larger I can be obtained on the electrode of the third heavily N-doped Si region 501Therefore, the current amplification effect is realized, the integral detection precision can be improved, and the actual use requirement is met.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (5)
1. A silicon photodetector with current amplification, comprising:
a silicon optical waveguide region;
a first heavily doped N-type silicon region and a second heavily doped N-type silicon region; the first N-type heavily doped silicon region and the second N-type heavily doped silicon region are respectively positioned on two sides of the silicon optical waveguide region and are connected with the silicon optical waveguide region;
a P-type heavily doped silicon region and a third N-type heavily doped silicon region; the P-type heavily doped silicon region is arranged between the first N-type heavily doped silicon region and the third N-type heavily doped silicon region and is connected with the first N-type heavily doped silicon region and the third N-type heavily doped silicon region;
a first metal electrode electrically connected to the P-type heavily doped silicon region;
a second metal electrode electrically connected to the second N-type heavily doped silicon region;
and a third metal electrode electrically connected to the third heavily N-doped silicon region.
2. The silicon photodetector with current amplification of claim 1, wherein the silicon optical waveguide region is an intrinsic silicon region.
3. The silicon photodetector with current amplification of claim 1, wherein the doping concentration of the first heavily N-type silicon region is higher than the doping concentration of the heavily P-type silicon region.
4. The silicon photodetector of claim 1, wherein the heavily P-doped silicon region has a thinner thickness than the first heavily N-doped silicon region.
5. The silicon photodetector with current amplification of claim 1, wherein in operation, the voltage applied to the first metal electrode is higher than the voltage applied to the second metal electrode, and the voltage applied to the third metal electrode is higher than the voltage applied to the first metal electrode, such that a PN junction between the third heavily doped silicon region of N type and the heavily doped silicon region of P type is reverse biased, and a PN junction between the heavily doped silicon region of P type and the first heavily doped silicon region of N type is forward biased in case of light incidence.
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| CN201911176655.3A CN110993708B (en) | 2019-11-26 | 2019-11-26 | Silicon photoelectric detector with current amplification function |
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| CN111665648A (en) * | 2020-06-22 | 2020-09-15 | 三明学院 | Novel electro-optical modulator and electro-optical modulation method |
| CN113284964B (en) * | 2021-04-22 | 2022-06-24 | 北京邮电大学 | Guided mode photoelectric detector |
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| JPH02194687A (en) * | 1989-01-24 | 1990-08-01 | Nippon Telegr & Teleph Corp <Ntt> | Optical integrated circuit |
| JP2000164841A (en) * | 1998-10-09 | 2000-06-16 | Stmicroelectronics Srl | Infrared detector device and process for forming the same |
| CN102165346A (en) * | 2008-09-30 | 2011-08-24 | 英特尔公司 | Method and apparatus for high speed silicon optical modulation using PN diode |
| CN103018929A (en) * | 2012-12-05 | 2013-04-03 | 上海交通大学 | Silicon waveguide refractive index calorescence adjusting structure |
| CN105762220A (en) * | 2014-12-01 | 2016-07-13 | 卢克斯特拉有限公司 | Method and system for germanium-on-silicon photodetectors without germanium layer contacts |
| CN106057927A (en) * | 2016-07-29 | 2016-10-26 | 何颖 | Optical waveguide detector |
| CN106461986A (en) * | 2014-04-07 | 2017-02-22 | 株式会社藤仓 | Optical waveguide device and method of manufacturing the same |
-
2019
- 2019-11-26 CN CN201911176655.3A patent/CN110993708B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02194687A (en) * | 1989-01-24 | 1990-08-01 | Nippon Telegr & Teleph Corp <Ntt> | Optical integrated circuit |
| JP2000164841A (en) * | 1998-10-09 | 2000-06-16 | Stmicroelectronics Srl | Infrared detector device and process for forming the same |
| CN102165346A (en) * | 2008-09-30 | 2011-08-24 | 英特尔公司 | Method and apparatus for high speed silicon optical modulation using PN diode |
| CN103018929A (en) * | 2012-12-05 | 2013-04-03 | 上海交通大学 | Silicon waveguide refractive index calorescence adjusting structure |
| CN106461986A (en) * | 2014-04-07 | 2017-02-22 | 株式会社藤仓 | Optical waveguide device and method of manufacturing the same |
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| CN106057927A (en) * | 2016-07-29 | 2016-10-26 | 何颖 | Optical waveguide detector |
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