CN111665648A - Novel electro-optical modulator and electro-optical modulation method - Google Patents
Novel electro-optical modulator and electro-optical modulation method Download PDFInfo
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
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- G02F1/0316—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0327—Operation of the cell; Circuit arrangements
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Abstract
A novel electro-optical modulator and an electro-optical modulation method relate to the field of electro-optical modulators. The novel electro-optic modulator comprises a first n-type semiconductor region, a first p-type semiconductor region, a second n-type semiconductor region, a third n-type semiconductor region, a second p-type semiconductor region, a third p-type semiconductor region, a light guide region, a first electrode, a second electrode and a third electrode. The doping concentration of both the first n-type semiconductor region and the second n-type semiconductor region is greater than the doping concentration of the first p-type semiconductor region. The third n-type semiconductor region has a doping concentration less than that of the second n-type semiconductor region. The doping concentration of the third p-type semiconductor region is less than the doping concentration of the second p-type semiconductor region. The electro-optic modulation method includes applying a voltage across the first electrode, the second electrode, and the third electrode. The voltage of the second electrode is higher than that of the first electrode, and the voltage of the third electrode is higher than that of the second electrode. And the whole has higher bandwidth and higher modulation efficiency.
Description
Technical Field
The invention relates to the field of electro-optical modulators, in particular to a novel electro-optical modulator and an electro-optical modulation method.
Background
The existing electro-optical modulator often has the problems of limited bandwidth and difficult further improvement of modulation efficiency, so that the application of the electro-optical modulator in an optical fiber communication system is limited to a certain extent, and certain obstruction is formed for further improving the transmission efficiency of the whole optical fiber communication system.
In view of this, the present application is specifically made.
Disclosure of Invention
The first purpose of the present invention is to provide a novel electro-optical modulator, which has a simple structure, a higher bandwidth, a higher modulation efficiency, and a greatly improved working efficiency, and has a positive significance for further improving the transmission efficiency of the whole optical fiber communication system.
The second objective of the present invention is to provide an electro-optical modulation method, which is simple and easy to implement, can complete the whole modulation process quickly and efficiently, has high implementation efficiency, and has positive significance for further improving the transmission efficiency of the whole optical fiber communication system.
The embodiment of the invention is realized by the following steps:
a novel electro-optic modulator, comprising: a first n-type semiconductor region, a first p-type semiconductor region, a second n-type semiconductor region, a third n-type semiconductor region, a second p-type semiconductor region, a third p-type semiconductor region, a light guide region, a first electrode, a second electrode, and a third electrode.
The first p-type semiconductor region is conductively connected between the first n-type semiconductor region and the second n-type semiconductor region. The third n-type semiconductor region is conductively connected to a side of the second n-type semiconductor region remote from the first p-type semiconductor region. The light guide region is conductively connected to a side of the third n-type semiconductor region remote from the second n-type semiconductor region. The third p-type semiconductor region is conductively connected to a side of the light guiding region remote from the third n-type semiconductor region. The second p-type semiconductor region is conductively connected to a side of the third p-type semiconductor region remote from the light guiding region. The first electrode is conductively connected to the first n-type semiconductor region, the second electrode is conductively connected to the first p-type semiconductor region, and the third electrode is conductively connected to the second p-type semiconductor region.
Wherein the doping concentration of both the first n-type semiconductor region and the second n-type semiconductor region is greater than the doping concentration of the first p-type semiconductor region. The third n-type semiconductor region has a doping concentration less than that of the second n-type semiconductor region. The doping concentration of the third p-type semiconductor region is less than the doping concentration of the second p-type semiconductor region.
The third n-type semiconductor region has a first ridge region, the third p-type semiconductor region has a second ridge region, and the first ridge region and the second ridge region are both in bonding conduction with the light guide region.
Further, the thickness of the first p-type semiconductor region in its conducting direction is less than or equal to 50 nm.
Further, the second electrode has a first transmission branch for transmitting the electrical signal and a second transmission branch for applying the voltage.
Further, the doping concentration of the first n-type semiconductor region, the second n-type semiconductor region and the second p-type semiconductor region is 1 x 1020 cm-3. The doping concentration of the first p-type semiconductor region, the third n-type semiconductor region and the third p-type semiconductor region is 5 x 1017 cm-3.
Further, the first N-type semiconductor region and the second N-type semiconductor region are both made of heavily doped N-type silicon. The first P-type semiconductor region is made of lightly doped P-type silicon.
Further, the second N-type semiconductor region is made of heavily doped N-type silicon. The third N-type semiconductor region is made of lightly doped N-type silicon. The third P-type semiconductor region is made of lightly doped P-type silicon. The second P-type semiconductor region is made of heavily doped P-type silicon. The photoconductive region is intrinsic silicon.
An electro-optical modulation method using the novel electro-optical modulator comprises the following steps: voltages are applied to the first electrode, the second electrode, and the third electrode. Wherein a voltage of the second electrode is higher than a voltage of the first electrode, and a voltage of the third electrode is higher than a voltage of the second electrode, so that a PN junction between the first n-type semiconductor region and the first p-type semiconductor region is reversely biased, and a PN junction between the first p-type semiconductor region and the second n-type semiconductor region is positively biased.
Further, the electro-optical modulation method further includes: a dc bias and a voltage signal are applied between the second electrode and the first electrode, and a dc bias is applied between the third electrode and the second electrode.
The embodiment of the invention has the beneficial effects that:
in the novel electro-optic modulator provided by the embodiment of the invention, in the use process, the first n-type semiconductor region, the first p-type semiconductor region and the second n-type semiconductor region form a structure similar to a triode, and the second n-type semiconductor region, the third n-type semiconductor region, the light guide region, the third p-type semiconductor region and the second p-type semiconductor region form a structure similar to a modulator. Through the adjustment and control of the first electrode, the second electrode and the third electrode, the voltage signal can generate a current signal between the first electrode and the second electrode, and the input current similar to a triode amplifier is realized. An amplified current of the current between the first n-type semiconductor region and the first p-type semiconductor region is generated between the first p-type semiconductor region and the second n-type semiconductor region, thereby achieving the purpose of amplifying the current signal. Thereby increasing the rate of modulator charging and discharging and thus increasing bandwidth.
Further, the amplified current is favorably modulated and outputted by the modulating action of the second n-type semiconductor region, the third n-type semiconductor region, the light guiding region, the third p-type semiconductor region and the second p-type semiconductor region.
Through the design, the current amplification and the electro-optical modulation are skillfully combined, which is equivalent to the integration of a triode-like structure and a modulator-like structure. The structure is compacter, reasonable, and modulation efficiency is higher, and whole responsibility is higher, when realizing the high bandwidth, has improved charge-discharge rate greatly, makes whole modulation efficiency higher, has subdued the dwell time greatly, has improved holistic corresponding smooth and easy degree.
According to the electro-optical modulation method provided by the embodiment of the invention, the novel electro-optical modulator applies voltage to the first electrode, the second electrode and the third electrode. Wherein a voltage of the second electrode is higher than a voltage of the first electrode, and a voltage of the third electrode is higher than a voltage of the second electrode, so that a PN junction between the first n-type semiconductor region and the first p-type semiconductor region is reversely biased, and a PN junction between the first p-type semiconductor region and the second n-type semiconductor region is positively biased. The whole modulation work can be completed through simple operation and simple flow.
In general, the novel electro-optical modulator provided by the embodiment of the invention has a simple structure, higher bandwidth and higher modulation efficiency, greatly improves the working efficiency, and has positive significance for further improving the transmission efficiency of the whole optical fiber communication system. The electro-optical modulation method provided by the embodiment of the invention is simple and easy to implement, can quickly and efficiently complete the whole modulation process, has high implementation efficiency, and has positive significance for further improving the transmission efficiency of the whole optical fiber communication system.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a novel electro-optical modulator according to an embodiment of the present invention.
Icon: a novel electro-optic modulator 1000; a first n-type semiconductor region 100; a first p-type semiconductor region 200; a second n-type semiconductor region 300; a third n-type semiconductor region 400; a first ridge region 410; a second p-type semiconductor region 500; a third p-type semiconductor region 600; a second ridge region 610; a light guiding region 700; a first electrode 810; a second electrode 820; a first transmission branch 821; a second transmission branch 822; and a third electrode 830.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
The terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Examples
Referring to fig. 1, the present embodiment provides a novel electro-optical modulator 1000, and the novel electro-optical modulator 1000 includes: a first n-type semiconductor region 100, a first p-type semiconductor region 200, a second n-type semiconductor region 300, a third n-type semiconductor region 400, a second p-type semiconductor region 500, a third p-type semiconductor region 600, a light guide region 700, a first electrode 810, a second electrode 820, and a third electrode 830.
The first p-type semiconductor region 200 is conductively connected between the first n-type semiconductor region 100 and the second n-type semiconductor region 300.
The third n-type semiconductor region 400 is conductively connected to a side of the second n-type semiconductor region 300 remote from the first p-type semiconductor region 200.
The light guiding region 700 is conductively connected to a side of the third n-type semiconductor region 400 remote from the second n-type semiconductor region 300.
The third p-type semiconductor region 600 is conductively connected to a side of the light guiding region 700 remote from the third n-type semiconductor region 400.
The second p-type semiconductor region 500 is conductively connected to a side of the third p-type semiconductor region 600 remote from the light guiding region 700.
The first electrode 810 is conductively connected to the first n-type semiconductor region 100, the second electrode 820 is conductively connected to the first p-type semiconductor region 200, and the third electrode 830 is conductively connected to the second p-type semiconductor region 500.
Wherein the doping concentration of both the first n-type semiconductor region 100 and the second n-type semiconductor region 300 is greater than the doping concentration of the first p-type semiconductor region 200. The doping concentration of the third n-type semiconductor region 400 is less than the doping concentration of the second n-type semiconductor region 300. The doping concentration of the third p-type semiconductor region 600 is smaller than the doping concentration of the second p-type semiconductor region 500.
The third n-type semiconductor region 400 has a first ridge region 410, the third p-type semiconductor region 600 has a second ridge region 610, and the first ridge region 410 and the second ridge region 610 are both in contact with the light guide region 700.
In use, the first n-type semiconductor region 100, the first p-type semiconductor region 200 and the second n-type semiconductor region 300 form a "triode-like" structure, and the second n-type semiconductor region 300, the third n-type semiconductor region 400, the light guide region 700, the third p-type semiconductor region 600 and the second p-type semiconductor region 500 form a "modulator-like" structure. Through the adjustment and control of the first electrode 810, the second electrode 820 and the third electrode 830, the voltage signal can generate a current signal between the first electrode 810 and the second electrode 820, and the input current of the triode-like amplifier is realized. An amplified current of the current between the first n-type semiconductor region 100 and the first p-type semiconductor region 200 is generated between the first p-type semiconductor region 200 and the second n-type semiconductor region 300, thereby achieving the purpose of amplifying the current signal. Thereby increasing the rate of modulator charging and discharging and thus increasing bandwidth.
Further, the amplified current is modulated and outputted smoothly by the modulating action of the second n-type semiconductor region 300, the third n-type semiconductor region 400, the light guiding region 700, the third p-type semiconductor region 600, and the second p-type semiconductor region 500.
Through the design, the current amplification and the electro-optical modulation are skillfully combined, which is equivalent to the integration of a triode-like structure and a modulator-like structure. The structure is compacter, reasonable, and modulation efficiency is higher, and whole responsibility is higher, when realizing the high bandwidth, has improved charge-discharge rate greatly, makes whole modulation efficiency higher, has subdued the dwell time greatly, has improved holistic corresponding smooth and easy degree.
In general, the novel electro-optical modulator 1000 has a simple structure, has a higher bandwidth and a higher modulation efficiency, greatly improves the working efficiency, and has a positive significance for further improving the transmission efficiency of the whole optical fiber communication system.
Further, the thickness of the first p-type semiconductor region 200 in the on direction is less than or equal to 50 nm. In the present embodiment, the thickness of the first p-type semiconductor region 200 is set to 50nm, thereby enabling carriers to break down the first p-type semiconductor region 200 more smoothly.
In this embodiment, the second electrode 820 has a first transmission branch 821 for transmitting an electrical signal and a second transmission branch 822 for applying a voltage.
Specifically, the first N-type semiconductor region 100 and the second N-type semiconductor region 300 are each made of heavily doped N-type silicon. The first P-type semiconductor region 200 is made of lightly doped P-type silicon. The second N-type semiconductor region 300 is made of heavily doped N-type silicon. The third N-type semiconductor region 400 is made of lightly doped N-type silicon. The third P-type semiconductor region 600 is made of lightly doped P-type silicon. The second P-type semiconductor region 500 is made of heavily doped P-type silicon. Photoconductive region 700 is intrinsic silicon.
In the present embodiment, the doping concentrations of the first n-type semiconductor region 100, the second n-type semiconductor region 300, and the second p-type semiconductor region 500 are all 1 × 1020cm 3. The doping concentrations of the first p-type semiconductor region 200, the third n-type semiconductor region 400 and the third p-type semiconductor region 600 are all 5 x 1017 cm-3.
The present embodiment further provides an electro-optical modulation method using the novel electro-optical modulator 1000, which includes: voltages are applied to the first electrode 810, the second electrode 820, and the third electrode 830. Wherein the voltage of the second electrode 820 is higher than the voltage of the first electrode 810, and the voltage of the third electrode 830 is higher than the voltage of the second electrode 820, so that the PN junction between the first n-type semiconductor region 100 and the first p-type semiconductor region 200 is reverse-biased, and the PN junction between the first p-type semiconductor region 200 and the second n-type semiconductor region 300 is forward-biased. The whole modulation work can be completed through simple operation and simple flow.
Further, the electro-optical modulation method further includes: a dc bias and voltage signal is applied between the second electrode 820 and the first electrode 810 and a dc bias is applied between the third electrode 830 and the second electrode 820.
Generally, the electro-optical modulation method is simple and easy to implement, can quickly and efficiently complete the whole modulation process, has high implementation efficiency, and has positive significance for further improving the transmission efficiency of the whole optical fiber communication system.
In conclusion, the novel electro-optical modulator 1000 has a simple structure, has a higher bandwidth and a higher modulation efficiency, greatly improves the working efficiency, and has a positive significance for further improving the transmission efficiency of the whole optical fiber communication system. The electro-optical modulation method is simple and easy to implement, can quickly and efficiently complete the whole modulation process, has high execution efficiency, and has positive significance for further improving the transmission efficiency of the whole optical fiber communication system.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A novel electro-optic modulator, comprising: a first n-type semiconductor region, a first p-type semiconductor region, a second n-type semiconductor region, a third n-type semiconductor region, a second p-type semiconductor region, a third p-type semiconductor region, a light guide region, a first electrode, a second electrode, and a third electrode;
the first p-type semiconductor region is conductively connected between the first n-type semiconductor region and the second n-type semiconductor region; the third n-type semiconductor region is conductively connected to one side of the second n-type semiconductor region far away from the first p-type semiconductor region; the light guide region is conductively connected to one side of the third n-type semiconductor region far away from the second n-type semiconductor region; the third p-type semiconductor region is conductively connected to one side of the light guide region far away from the third n-type semiconductor region; the second p-type semiconductor region is conductively connected to one side of the third p-type semiconductor region far away from the light guide region; the first electrode is in conductive connection with the first n-type semiconductor region, the second electrode is in conductive connection with the first p-type semiconductor region, and the third electrode is in conductive connection with the second p-type semiconductor region;
wherein the doping concentration of both the first n-type semiconductor region and the second n-type semiconductor region is greater than the doping concentration of the first p-type semiconductor region; the doping concentration of the third n-type semiconductor region is less than that of the second n-type semiconductor region; the doping concentration of the third p-type semiconductor region is less than that of the second p-type semiconductor region;
the third n-type semiconductor region has a first ridge region, the third p-type semiconductor region has a second ridge region, and the first ridge region and the second ridge region are both in contact conduction with the light guide region.
2. A novel electro-optic modulator as claimed in claim 1 wherein the thickness of the first p-type semiconductor region in its conducting direction is less than or equal to 50 nm.
3. The novel electro-optic modulator of claim 1, wherein the second electrode has a first transmission branch for transmitting an electrical signal and a second transmission branch for applying a voltage.
4. The electro-optic modulator of claim 1, wherein the first n-type semiconductor region, the second n-type semiconductor region, and the second p-type semiconductor region each have a doping concentration of 1 x 1020cm-3(ii) a The doping concentration of the first p-type semiconductor region, the third n-type semiconductor region and the third p-type semiconductor region is 5 x 1017cm-3。
5. The novel electro-optic modulator of claim 1, wherein the first and second N-type semiconductor regions are each made of heavily doped N-type silicon; the first P-type semiconductor region is made of lightly doped P-type silicon.
6. The novel electro-optic modulator of claim 1, wherein the second N-type semiconductor region is made of heavily doped N-type silicon; the third N-type semiconductor region is made of lightly doped N-type silicon; the third P-type semiconductor region is made of lightly doped P-type silicon; the second P-type semiconductor region is made of heavily doped P-type silicon; the photoconductive region is intrinsic silicon.
7. An electro-optical modulation method using the novel electro-optical modulator according to any one of claims 1 to 6, comprising: applying a voltage across the first electrode, the second electrode, and the third electrode; wherein a voltage of the second electrode is higher than a voltage of the first electrode, and a voltage of the third electrode is higher than a voltage of the second electrode, so that a PN junction between the first n-type semiconductor region and the first p-type semiconductor region is reverse-biased, and a PN junction between the first p-type semiconductor region and the second n-type semiconductor region is forward-biased.
8. The electro-optic modulation method of claim 7, further comprising: a dc bias and a voltage signal are applied between the second electrode and the first electrode, and a dc bias is applied between the third electrode and the second electrode.
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| CN106461986A (en) * | 2014-04-07 | 2017-02-22 | 株式会社藤仓 | Optical waveguide device and method of manufacturing the same |
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2020
- 2020-06-22 CN CN202010575956.XA patent/CN111665648A/en active Pending
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| CN101842736A (en) * | 2007-08-08 | 2010-09-22 | 新加坡科技研究局 | An electro-optic device and a method for manufacturing the same |
| CN106461986A (en) * | 2014-04-07 | 2017-02-22 | 株式会社藤仓 | Optical waveguide device and method of manufacturing the same |
| US9142698B1 (en) * | 2014-04-14 | 2015-09-22 | Oracle International Corporation | Integrated electro-absorption modulator |
| CN105629519A (en) * | 2014-11-06 | 2016-06-01 | 江苏尚飞光电科技有限公司 | Silicon-based light modulator |
| CN110993708A (en) * | 2019-11-26 | 2020-04-10 | 三明学院 | Silicon photoelectric detector with current amplification function |
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