CN109116589A - A kind of novel PIN electrooptical modulator structure - Google Patents
A kind of novel PIN electrooptical modulator structure Download PDFInfo
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- CN109116589A CN109116589A CN201811185140.5A CN201811185140A CN109116589A CN 109116589 A CN109116589 A CN 109116589A CN 201811185140 A CN201811185140 A CN 201811185140A CN 109116589 A CN109116589 A CN 109116589A
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 28
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 28
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 28
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 239000002019 doping agent Substances 0.000 claims description 12
- 239000002210 silicon-based material Substances 0.000 claims description 10
- 230000000694 effects Effects 0.000 abstract description 31
- 239000006185 dispersion Substances 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 40
- 229910052710 silicon Inorganic materials 0.000 description 40
- 239000010703 silicon Substances 0.000 description 40
- 239000000758 substrate Substances 0.000 description 15
- 238000002513 implantation Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000306 component Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000005374 Kerr effect Effects 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
- G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a kind of novel PIN electrooptical modulator structures, including N-Sub layers, and N-Sub layers of top is provided with SiO2Buried layer, SiO2Two sides at the top of buried layer are respectively arranged with P+ well region, N+ well region, intrinsic N-type germanium silicon modulator zone is provided between P+ well region, N+ well region, the cooperation that is serrated at intrinsic N-type germanium silicon modulator zone and P+ well region, N+ well region contact position contacts the lateral double heterojunction of formation, intrinsic N-type germanium silicon modulator zone is in ridge convex, first electrode is provided at the top of P+ well region, second electrode is provided at the top of N+ well region, the top of first electrode, intrinsic N-type germanium silicon modulator zone and second electrode is all covered with SiO2Coating, the present invention can not only improve carrier concentration, enhance plasma dispersion effect, and can inhibit temperature rise, weaken thermo-optic effect, improve modulation efficiency.
Description
Technical field
The invention belongs to optoelectronic device technology fields, and in particular to a kind of novel PIN electrooptical modulator structure.
Background technique
With the high-speed small-size of microelectronic component, so that the interconnection delay and energy consumption problem of integrated circuit are high at research
One impassable obstacle of fast integrated circuit technique is researched and developed using photon and electronics as the big rule of the silicon substrate of information carrier
Mould integrated technology is the effective means for removing this obstacle.
Silicon based optoelectronic devices are the key that photoelectron technology and core component, are current photoelectric technology and microelectric technique
Popular research field, be the important component of information technology.
Silicon-based electro-optical modulator is a kind of to be changed in the way of electrooptic effect, thermo-optic effect, plasma dispersion effect etc.
The silicon-based modulator of fiber waveguide refractive index.
Odd-order electrooptic effect is not present as a kind of centrosymmetrical crystal in silicon, and Pockels linear electro-optic coefficient is zero,
Kerr effect is also very weak, therefore without direct electrooptic effect in silicon.But by changing the free carrier in optical waveguide
Concentration can cause the refractive index of silicon and the change of absorption coefficient, and this effect (plasma dispersion effect) is very significant,
It can be realized the optical waveguide modulation of high speed, this is also the dominant mechanism of current silicon-based electro-optic modulation.
Silicon-based electro-optical modulator is to change its carrier concentration by applied voltage, to change the refraction of modulator zone
Rate achievees the purpose that Electro-optical Modulation.Ideally, modulation voltage is higher, and carrier concentration is bigger, and variations in refractive index is bigger,
Plasma dispersion effect is stronger, and modulation effect is better.But while modulation voltage increases, also increase the modulation function of device
Consumption, and more crucially modulation voltage increases meeting so that device temperature rises, so as to cause thermo-optic effect.Electrooptic effect makes
Blue shift occurs for modulator zone refractive index, and thermo-optic effect makes modulator zone refractive index that red shift occur, and thermo-optic effect hinders electrooptic effect, adjusts
Deterioration of efficiency processed.Therefore in the case where guaranteeing modulation effect, modulation power consumption is reduced, inhibiting thermo-optic effect is silicon-based electro-optic modulation
Device problem to be solved.
There are many kinds for silicon-based electro-optical modulator, and wherein PIN modulated structure has structure simple, and modulation efficiency is high, are easy to work
The features such as skill is realized, therefore the new structure of this patent is also to be designed in silicon substrate PIN Electro-optical Modulation structure basis.
Summary of the invention
The object of the present invention is to provide a kind of novel PIN electrooptical modulator structures, and it is dense which can not only improve carrier
Degree enhances plasma dispersion effect, and can inhibit temperature rise, weakens thermo-optic effect, improves modulation efficiency.
The technical scheme adopted by the invention is that a kind of novel PIN electrooptical modulator structure, including N-Sub layers, N-Sub
The top of layer is provided with SiO2Buried layer, SiO2Two sides at the top of buried layer are respectively arranged with P+ well region, N+ well region, P+ well region, N+ well region
Between be provided with intrinsic N-type germanium silicon modulator zone, be in sawtooth at intrinsic N-type germanium silicon modulator zone and P+ well region, N+ well region contact position
Shape cooperation contact forms lateral double heterojunction, and intrinsic N-type germanium silicon modulator zone is in ridge convex, and the is provided at the top of P+ well region
One electrode is provided with second electrode, the top of first electrode, intrinsic N-type germanium silicon modulator zone and second electrode at the top of N+ well region
It is all covered with SiO2Coating.
The features of the present invention also characterized in that
The doping concentration of P+ well region is 1 × 1019cm-3~1.2 × 1020cm-3, it is highly 0.17 μm that dopant, which is B ion,
Width is 0.5 μm~1 μm.
The doping concentration of N+ well region is 1 × 1019cm-3~1.2 × 1020cm-3, it is highly 0.17 μm that dopant, which is P ion,
Width is 0.5 μm~1 μm.
Intrinsic N-type germanium silicon modulator zone is germanium silicon material, and doping concentration is 1 × 1015cm-3, dopant is P ion.
Overall width of the intrinsic N-type germanium silicon modulator zone between P+ well region, N+ well region is 1.5 μm~3 μm, intrinsic N-type germanium
The height of silicon modulator zone is 0.17 μm, and the height of the middle position ridge protrusion of intrinsic N-type germanium silicon modulator zone is 0.22 μm, this
The width for levying the middle position ridge protrusion of N-type germanium silicon modulator zone is 0.4 μm~0.6 μm, the ridge of intrinsic N-type germanium silicon modulator zone
Type projection length and P+ well region, N+ well region, first electrode, second electrode, SiO2Coating, SiO2Buried layer, N-Sub layers of length phase
Deng.
SiO2The height of coating is 0.5 μm~1 μm, and width is 2.5 μm~5 μm.
SiO2The height of buried layer is 0.5 μm~1 μm, and width is 2.5 μm~5 μm.
N-Sub layers of doping concentration is 1 × 1013cm-3~1 × 1015cm-3, dopant is P ion, highly for 100 μm~
300 μm, width is 2.5 μm~5 μm.
The beneficial effects of the present invention are:
(1) novel PIN electrooptical modulator structure of the invention uses germanium silicon material in modulator zone, forms lateral Si/
SiGe/Si double heterojunction can increase substantially carrier concentration, enhance plasma dispersion effect.
(2) novel PIN electrooptical modulator structure of the invention is serrated in modulator zone and the area P+ and N+ regional boundary face, effectively
Carrier injection area is increased, carrier impact probability is reduced, weakens thermo-optic effect, reduce the drift of refractive index,
Improve modulation efficiency.
(3) novel PIN electrooptical modulator structure of the invention, since the modulator zone of device uses germanium silicon material, it has
There is bigger refractive index, therefore there is better convergence property to light wave transmissions, reduces optical transmission loss, it is further to be promoted
The performance of modulator.Under identical modulation effect, modulation voltage can be effectively reduced, modulation power consumption is reduced, improves modulation effect
It is integrated to be more favorable for photoelectricity for rate.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of novel PIN electrooptic modulator of the invention；
Fig. 2 is the structural schematic diagram of existing routine PIN modulator；
Fig. 3 is under different biass, and the modulator zone of conventional PIN modulator and novel PIN electrooptic modulator of the invention carries
Flow sub- implantation concentration contrast curve chart；
Fig. 4 is that at different temperatures, the modulator zone of conventional PIN modulator and novel PIN electrooptic modulator of the invention carries
Flow sub- implantation concentration contrast curve chart.
In figure, 1.P+ well region, 2. intrinsic N-type germanium silicon modulator zones, 3.N+ well region, 4. first electrodes, 5. second electrodes,
6.SiO2Coating, 7.SiO2Buried layer, 8.N-Sub layers, 9. intrinsic N-type silicon modulator zones, 10.P+ well region A, 11.N+ well region A, 12.
First electrode A, 13. second electrode A, 14.SiO2Coating A, 15.SiO2Buried layer A, 16.N-Sub layer A.
Specific embodiment
The following describes the present invention in detail with reference to the accompanying drawings and specific embodiments.
A kind of novel PIN electrooptical modulator structure of the present invention, structure as shown in Figure 1, include N-Sub layer 8, N-Sub layer 8
Top is provided with SiO2Buried layer 7, SiO2The two sides at 7 top of buried layer are respectively arranged with P+ well region 1, N+ well region 3, P+ well region 1, N+ trap
Be provided with intrinsic N-type germanium silicon modulator zone 2 between area 3, intrinsic N-type germanium silicon modulator zone 2 at P+ well region 1,3 contact position of N+ well region
The cooperation contact that is serrated forms lateral double heterojunction, and intrinsic N-type germanium silicon modulator zone 2 is in ridge convex, the top of P+ well region 1
It is provided with first electrode 4, the top of N+ well region 3 is provided with second electrode 5, first electrode 4, intrinsic N-type germanium silicon modulator zone 2 and
The top of two electrodes 5 is all covered with SiO2Coating 6.
The doping concentration of P+ well region 1 is 1 × 1019cm-3~1.2 × 1020cm-3, it is highly 0.17 μ that dopant, which is B ion,
M, width are 0.5 μm~1 μm.
The doping concentration of N+ well region 3 is 1 × 1019cm-3~1.2 × 1020cm-3, dopant is P ion, is highly 0.17 μ
M, width are 0.5 μm~1 μm.
Intrinsic N-type germanium silicon modulator zone 2 is germanium silicon material, and doping concentration is 1 × 1015cm-3, dopant is P ion.
Overall width of the intrinsic N-type germanium silicon modulator zone 2 between P+ well region 1, N+ well region 3 is 1.5 μm~3 μm, intrinsic N-type
The height of germanium silicon modulator zone 2 is 0.17 μm, and the height of the middle position ridge protrusion of intrinsic N-type germanium silicon modulator zone 2 is 0.22 μ
M, the width of the middle position ridge protrusion of intrinsic N-type germanium silicon modulator zone 2 are 0.4 μm~0.6 μm, intrinsic N-type germanium silicon modulation
The ridge projection length and P+ well region 1, N+ well region 3, first electrode 4, second electrode 5, SiO in area 22Coating 6, SiO2Buried layer 7,
8 equal length of N-Sub layer.
SiO2The height of coating 6 is 0.5 μm~1 μm, and width is 2.5 μm~5 μm.
SiO2The height of buried layer 7 is 0.5 μm~1 μm, and width is 2.5 μm~5 μm.
The doping concentration of N-Sub layer 8 is 1 × 1013cm-3~1 × 1015cm-3, dopant is P ion, highly for 100 μm~
300 μm, width is 2.5 μm~5 μm.
Conventional silicon substrate PIN modulator is entirely to be made of silicon materials, and structure is as shown in Fig. 2, include N-Sub layers of A16, N-
SiO is provided with above Sub layers of A162Buried layer A15, SiO2Intrinsic N-type silicon modulator zone 9, P+ trap are respectively arranged with above buried layer A15
Area A10, N+ well region A11, P+ well region A10 and N+ well region A11 are located at the two sides of intrinsic N-type silicon modulator zone 9, P+ well region A10
Top is equipped with the top first electrode A12, N+ well region A11 and is equipped with second electrode A13, first electrode A12, second electrode A13 and sheet
The top of sign N-type silicon modulator zone 9 is covered with SiO2Coating A14.
For a kind of novel PIN electrooptical modulator structure of the present invention compared with conventional silicon substrate PIN modulator, difference is this hair
Bright to use germanium silicon material in modulator zone, the cooperation that is serrated of germanium silicon modulator zone and two sides active area interface contacts, and forms one
Kind of zigzag transverse direction double heterojunction PIN electricity modulator structure, compared with conventional PIN electricity modulator structure, the present invention can be with
Carrier concentration is increased substantially, plasma dispersion effect is enhanced；Carrier injection area is increased effectively, carrier is reduced
Collision probability weakens thermo-optic effect, reduces the drift of refractive index, improves modulation efficiency.
A kind of working principle of novel PIN electrooptical modulator structure of the present invention is as follows:
Novel PIN electrooptic modulator passes through the Electro-optical Modulation of 5 control device of first electrode 4 and second electrode: when the first electricity
On pole 4 plus when positive voltage, negative voltage is connect in second electrode 5 and controls that electrooptic modulator is open-minded, and hole and electronics are respectively from P+ with this
Well region 1 and N+ well region 3 are injected into intrinsic N-type germanium silicon modulator zone 2, and the change of carrier number purpose can cause intrinsic N-type germanium silicon tune
The variations in refractive index in area 2 processed, to achieve the purpose that Light Modulation.Due to the effect of zigzag transverse direction double heterojunction, at PI knot
Hole barrier height and NI knot at electronic barrier height be substantially reduced, therefore inject into intrinsic N-type germanium silicon modulator zone 2
Carrier concentration is remarkably reinforced, so that the refraction index changing amount of intrinsic N-type germanium silicon modulator zone 2 increases, more easily light wave
Modulation.In modulated process, jagged PI knot and NI knot increase effectively carrier injection area, reduce carrier impact
Probability weakens thermo-optic effect, reduces the drift of refractive index；When adding positive voltage in second electrode 5, connect in first electrode 4
Negative voltage controls electrooptic modulator with this and closes, and the carrier in intrinsic N-type germanium silicon modulator zone 2 is extracted, intrinsic N-type germanium silicon tune
The refractive index in area 2 processed becomes the refractive index of original original material, and Light Modulation terminates.Due to the work of zigzag transverse direction double heterojunction
With the electronic barrier height at the hole barrier height and NI knot at PI knot is substantially reduced, therefore intrinsic N-type when negative applied voltage
Carrier extracts speed and also accelerates in germanium silicon modulator zone 2, so that the modulating speed of novel PIN electrooptical modulator structure becomes
Fastly；And carrier injection area is increased effectively, reduces carrier impact probability, it is suppressed that device temperature rise improves tune
Efficiency processed.
Conventional silicon substrate PIN modulator structure is the electric light tune by first electrode A12 and second electrode A13 control device
System: on first electrode A12 plus when positive voltage, negative voltage electrooptic modulator controlled with this open-minded, hole is connect on second electrode A13
It is injected respectively from P+ well region A10 and N+ well region A11 into intrinsic N-type silicon modulator zone 9 with electronics, to change intrinsic N-type silicon tune
The refractive index in area 9 processed, achievees the purpose that Light Modulation；When adding positive voltage on second electrode A13, connect on first electrode A12 negative
Voltage can control electrooptic modulator closing, and the carrier in intrinsic N-type silicon modulator zone 9 is extracted, intrinsic N-type silicon modulator zone 9
Refractive index become the refractive index of original original material, Light Modulation terminates.Since hetero-junctions and zigzag knot is laterally not present,
Carrier injection and extraction are only related to the characteristic of silicon materials, and carrier injects number and carrier extracts speed lower than the present invention
Novel PIN electrooptical modulator structure, and device temperature is high, reduces the modulation efficiency of device.
Modulator structure binding isotherm in the present invention can show that modulator also has certain advantage in terms of modulating speed,
The present invention is mainly attached most importance to the emulation of modulator zone carrier implantation concentration and temperature.In simulations mainly for its forward bias
Modulated area carrier implantation concentration and temperature are emulated: it finds in simulations, under identical modulation voltage, and novel PIN electric light
The intrinsic 2 carrier implantation concentration of N-type germanium silicon modulator zone of modulator structure is far longer than the conventional silicon substrate PIN photoelectricity tune of same size
The intrinsic 9 carrier implantation concentration of N-type silicon modulator zone of device structure processed；Under identical carrier implantation concentration, novel PIN Electro-optical Modulation
Intrinsic 2 temperature of N-type germanium silicon modulator zone of device structure is less than the intrinsic N-type of the conventional silicon substrate PIN electro-optic modulator structure with size
9 temperature of silicon modulator zone.The intrinsic 2 carrier implantation concentration of N-type germanium silicon modulator zone of novel PIN electrooptical modulator structure and temperature
Specific simulation result difference is as shown in Figure 3 and Figure 4.
From figure 3, it can be seen that as modulation voltage increases, the intrinsic N-type germanium silicon tune of novel PIN electrooptical modulator structure
2 carrier concentration of area processed and intrinsic 9 carrier concentration of N-type silicon modulator zone of conventional silicon substrate PIN electro-optic modulator structure increase；
When modulation voltage is greater than 0.65V, the carrier concentration of novel PIN electrooptical modulator structure is significantly greater than conventional silicon substrate PIN light
Electric modulator structure；As modulation voltage increases, the increase amplitude of the carrier concentration of novel PIN electrooptical modulator structure is obvious
Higher than the carrier concentration of conventional silicon substrate PIN electro-optic modulator structure；When modulation voltage reaches 0.88V, novel PIN electric light tune
Carrier concentration phase of the carrier concentration of device structure processed with conventional silicon substrate PIN electro-optic modulator structure under 2V modulation voltage
Together；It can be seen that zigzag transverse direction double heterojunction increases effectively carrier implantation concentration, it, can under identical modulation concentration
Modulation voltage is greatly lowered, reduce modulation power consumption.
Figure 4, it is seen that intrinsic 2 carrier concentration of N-type germanium silicon modulator zone of novel PIN electrooptical modulator structure and
Intrinsic 9 carrier concentration of N-type silicon modulator zone of conventional silicon substrate PIN electro-optic modulator structure is proportional to temperature；It is identical
At a temperature of, intrinsic 2 carrier concentration of N-type germanium silicon modulator zone of novel PIN electrooptical modulator structure is greater than conventional silicon substrate PIN photoelectricity
Intrinsic 9 carrier concentration of N-type silicon modulator zone of modulator structure；Under identical carrier concentration, novel PIN electrooptical modulator structure
Intrinsic 2 temperature of N-type germanium silicon modulator zone be less than intrinsic 9 temperature of N-type silicon modulator zone of conventional silicon substrate PIN electro-optic modulator structure；
It can be seen that zigzag transverse direction double heterojunction can effectively increase carrier injection area, it is several to reduce carrier impact
Rate weakens thermo-optic effect, reduces the drift of refractive index, improves modulation efficiency.
A kind of novel PIN electrooptical modulator structure of the present invention is the modulator zone in conventional silicon substrate PIN electrooptical modulator structure
It is middle that silicon materials are replaced using germanium silicon material, and change active area doped region, form zigzag transverse direction double heterojunction PIN electricity tune
Device structure processed can not only increase substantially carrier concentration, enhance plasma dispersion effect, can also effectively increase carrier
Area is injected, carrier impact probability is reduced, weakens thermo-optic effect, reduces the drift of refractive index, improves modulation efficiency.
Claims (8)
1. a kind of novel PIN electrooptical modulator structure, which is characterized in that including N-Sub layers (8), set at the top of N-Sub layers (8)
It is equipped with SiO2Buried layer (7), SiO2Two sides at the top of buried layer (7) are respectively arranged with P+ well region (1), N+ well region (3), P+ well region (1), N
Intrinsic N-type germanium silicon modulator zone (2), intrinsic N-type germanium silicon modulator zone (2) and P+ well region (1), N+ well region are provided between+well region (3)
(3) the cooperation contact that is serrated at contact position forms lateral double heterojunction, and intrinsic N-type germanium silicon modulator zone (2) is in ridge protrusion
Shape is provided with first electrode (4) at the top of P+ well region (1), second electrode (5), first electrode is provided at the top of N+ well region (3)
(4), the top of intrinsic N-type germanium silicon modulator zone (2) and second electrode (5) is all covered with SiO2Coating (6).
2. a kind of novel PIN electrooptical modulator structure according to claim 1, which is characterized in that the P+ well region (1)
Doping concentration is 1 × 1019cm-3~1.2 × 1020cm-3, it is highly 0.17 μm that dopant, which is B ion, and width is 0.5 μm~1 μ
m。
3. a kind of novel PIN electrooptical modulator structure according to claim 1, which is characterized in that the N+ well region (3)
Doping concentration is 1 × 1019cm-3~1.2 × 1020cm-3, it is highly 0.17 μm that dopant, which is P ion, and width is 0.5 μm~1 μ
m。
4. a kind of novel PIN electrooptical modulator structure according to claim 1, which is characterized in that the intrinsic N-type germanium silicon
Modulator zone (2) is germanium silicon material, and doping concentration is 1 × 1015cm-3, dopant is P ion.
5. a kind of novel PIN electrooptical modulator structure according to any one of claims 1 to 4, which is characterized in that described
It is 1.5 μm~3 μm that sign N-type germanium silicon modulator zone (2), which is located at the overall width between P+ well region (1), N+ well region (3), intrinsic N-type germanium silicon
The height of modulator zone (2) is 0.17 μm, and the height of the middle position ridge protrusion of intrinsic N-type germanium silicon modulator zone (2) is .0.22
μm, the width of the middle position ridge protrusion of intrinsic N-type germanium silicon modulator zone (2) is 0.4 μm~0.6 μm, intrinsic N-type germanium silicon tune
The ridge projection length and P+ well region (1), N+ well region (3), first electrode (4), second electrode (5), SiO of area (2) processed2Coating
(6)、SiO2Buried layer (7), N-Sub layers of (8) equal length.
6. a kind of novel PIN electrooptical modulator structure according to claim 5, which is characterized in that the SiO2Coating
(6) height is 0.5 μm~1 μm, and width is 2.5 μm~5 μm.
7. a kind of novel PIN electrooptical modulator structure according to claim 5, which is characterized in that the SiO2Buried layer (7)
Height be 0.5 μm~1 μm, width be 2.5 μm~5 μm.
8. a kind of novel PIN electrooptical modulator structure according to claim 5, which is characterized in that N-Sub layers described (8)
Doping concentration be 1 × 1013cm-3~1 × 1015cm-3, it is highly 100 μm~300 μm that dopant, which is P ion, and width is 2.5 μ
M~5 μm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109901263A (en) * | 2019-01-29 | 2019-06-18 | 浙江大学 | A kind of silicon substrate integrated optics phased array chip based on common electrode |
| CN116500722A (en) * | 2023-06-25 | 2023-07-28 | 之江实验室 | Low-loss fast switching PIN electro-optic phase shift structure |
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| CN116500722B (en) * | 2023-06-25 | 2023-09-22 | 之江实验室 | Low-loss fast switching PIN electro-optic phase shift structure |
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