CN103207464B - A kind of electrooptical switching or optical attenuator - Google Patents
A kind of electrooptical switching or optical attenuator Download PDFInfo
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- CN103207464B CN103207464B CN201210016037.4A CN201210016037A CN103207464B CN 103207464 B CN103207464 B CN 103207464B CN 201210016037 A CN201210016037 A CN 201210016037A CN 103207464 B CN103207464 B CN 103207464B
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Abstract
The invention discloses a kind of electrooptical switching or optical attenuator, including a MZI structure being made up of parallel first wave guide arm and second waveguide arm, the first wave guide arm and second waveguide arm include a waveguide capacitor structure.External first electric signal source of first wave guide arm, external second electric signal source of second waveguide arm.Under the effect of external electric signal source, the intrinsic region of the ridge waveguide of the first wave guide arm has relatively large carrier to inject, and the intrinsic region of the ridge waveguide of the second waveguide arm is without injection carrier or the injection of small amount carrier；Connect electric signal source causes temperature change in two waveguide arms simultaneously, the temperature change caused by the second waveguide arm with first wave guide arm identical or infinite approach.Electrooptical switching or optical attenuator disclosed by the invention can reduce due to the variation of refractive index under the fuel factor caused by two waveguide arm temperature differences, improve device efficiency.
Description
Technical field
The present invention relates to a kind of integrated optoelectronic device, especially a kind of electrooptical switching or optical attenuator.
Background technology
Light is constituted using Mach-Ze Ende interferometers (Mach-Zehnder Interferometer, abbreviation MZI) structure
Waveguide switch is a kind of common technology.It is that first wave guide arm carries out phase tune by wherein one waveguide arm to MZI structures
System, makes two waveguide arms produce phase difference, so as to realize the function of electrooptical switching or optical attenuation.In United States Patent (USP) 7817881,
The concept of waveguide capacitor is introduced, free carrier can be stored in the waveguide core region of this waveguide capacitor, for adjusting
The refractive index of waveguide material processed.The phase-modulation of first wave guide arm is to be based on free carrier effect of dispersion.The first of MZI structures
Waveguide arm has free carrier to be injected into the passage of light propagation, makes the refractive index of the channel material under the driving of electric signal source
Change, i.e. the phase of optical signal in first wave guide arm changes.
However, because electric signal source driving is only carried in MZI structure first wave guide arms, having carrier in first wave guide arm
While injection, its temperature can also rise, and another waveguide arm is not loading electric signal source, therefore two on second waveguide arm
There is temperature difference between bar waveguide arm.Temperature causes variations in refractive index (i.e. fuel factor) and the electric signal source driving bet of material
The trend for entering the variations in refractive index (i.e. electrical effect) of material caused by carrier is opposite, and this is opened to the electric light based on electrical effect
Close or the operating efficiency of optical attenuator adversely affected, i.e., the temperature difference between two waveguide arms cause two waveguide arms it
Between refractive index difference be unable to reach desired value, result in device efficiency low.
The content of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of electrooptical switching or optical attenuator, solve with
Silicon-on-insulator SOI is that the electrooptical switching of substrate or two waveguide arm operating temperature differences of MZI structures in optical attenuator are big
Problem, offsets or reduces the influence because of temperature difference (i.e. fuel factor) to the refractive index of two waveguide arms so that two waveguide arms
Variations in refractive index difference first wave guide arm caused by applied electronic signal source in carrier concentration change determine, so as to improve device
Part efficiency.
The technical scheme is that：
A kind of electrooptical switching or optical attenuator, including a MZI structure, the MZI structures include two parallel waveguides
Arm, i.e. first wave guide arm and second waveguide arm, the first wave guide arm and second waveguide arm include a waveguide capacitor knot
Structure, wherein, external first electric signal source of first wave guide arm, external second electric signal source of second waveguide arm；Described
Under the effect of first electric signal source, the waveguide capacitor structure carriers concentration of the first wave guide arm changes；Described
Under the effect of second electric signal source, the waveguide capacitor structure carriers concentration of the second waveguide arm does not change, or should
Waveguide capacitor structure carriers change in concentration of the carrier concentration change less than the first wave guide arm；In the described first electricity
Under signal source and the effect of the second electric signal source, the temperature change of the first wave guide arm and second waveguide arm is same or like.
Electrooptical switching or optical attenuator as described above, wherein, the waveguide in the first wave guide arm and second waveguide arm
Capacitor arrangement is the ridge waveguide structure using semiconductor intrinsic area as core area；The both sides of the ridge waveguide of the first wave guide arm
The doping type of the doped region in flat board area is opposite；The flat board area of the ridge waveguide of the second waveguide arm includes two or more
Doped region, the both sides of the wave guide ridge of point row ridge waveguide, the doping type of the doped region can be with identical or opposite.One
In a little embodiments, the doping type of the doped region of the wave guide ridge both sides of the ridge waveguide of the first wave guide arm is on the contrary, constitute PIN bis-
Pole pipe structure, the doping type of the doped region of the wave guide ridge both sides of the ridge waveguide of the second waveguide arm is on the contrary, constitute the poles of PIN bis-
Tubular construction, the doping concentration of the doped region of the second waveguide arm is less than the doping concentration of the doped region of the first wave guide arm.
In further embodiments, the doping type of the doped region of the wave guide ridge both sides of the ridge waveguide of the first wave guide arm is on the contrary, structure
Into PIN diode structure, the doping type of the doped region of the wave guide ridge both sides of the ridge waveguide of the second waveguide arm is identical, constitutes
NIN or PIP structures.In other embodiments, the flat board area of the ridge waveguide of the second waveguide arm includes three doped regions, its
In the first doped region be located at the ridge waveguide wave guide ridge close to the side of the first wave guide arm, the second doped region and the 3rd is mixed
Miscellaneous area is located at side of the wave guide ridge away from the first wave guide arm of the ridge waveguide；Second doped region is mixed relative to the 3rd
Miscellaneous area is in the side close to the first wave guide arm；First doped region and the second doped region doping and the second waveguide arm
Ridge waveguide substrate semiconductor type identical dopant, the 3rd doped region doping and aforesaid substrate semiconductor type
Opposite dopant.
Electrooptical switching or optical attenuator as described above, wherein, the first wave guide arm above second waveguide arm with covering
There is one layer of oxide skin(coating), the oxide layer is formed in electrode contact hole, the electrode contact hole by etching and is filled with as electricity
The metal material of pole；The oxide skin(coating) and the metal material disposed thereon semi-conducting material；By to the semiconductor material
Material is doped, and makes the PN junction for forming reverse bias inside the semi-conducting material between positive and negative electrode, so that the oxidation
Semi-conducting material on layer turns into good heat-conducting layer but not electric current is introduced between electrode.In certain embodiments, described half
Conductor material is polysilicon.
Due to using above-mentioned technical proposal, silicon-based electro-optic switch or the heat balance method tool of optical attenuator that the present invention is provided
There is such beneficial effect：Under the external electric signal source of identical, the first wave guide of the MZI structures of electrooptical switching or optical attenuator
The intrinsic region of the ridge waveguide of arm has relatively large carrier to inject, and the intrinsic region of the ridge waveguide of second waveguide arm is without injection carrier
Or the injection of small amount carrier, i.e., relative to second waveguide arm, because carrier concentration changes and causes in first wave guide arm
Variations in refractive index significantly much；Meanwhile, external electric signal source causes temperature change, and second waveguide in two waveguide arms simultaneously
Arm is identical with the temperature change of first wave guide arm or infinite approach.So, first wave guide arm and the refractive index of second waveguide arm become
Change carrier concentration change in the difference only first wave guide arm caused by applied electronic signal source to determine, so that electrooptical switching or light
The working condition of attenuator is accurately controlled by the electric signal source driving of first wave guide arm.
Brief description of the drawings
Fig. 1 is the structural representation of electrooptical switching disclosed by the invention or optical attenuator.
Fig. 2 is that the present invention discloses the signal of one embodiment of electrooptical switching or optical attenuator in Fig. 1 at AA ' sections
Figure.
Fig. 3 is that the present invention discloses the signal of another embodiment of electrooptical switching or optical attenuator in Fig. 1 at AA ' sections
Figure.
Fig. 4 is that the present invention discloses the signal of another embodiment of electrooptical switching or optical attenuator in Fig. 1 at AA ' sections
Figure.
Fig. 5 is that the present invention discloses another embodiment of electrooptical switching or optical attenuator showing at AA ' sections in Fig. 1
It is intended to.
Embodiment
The present invention is described in detail below by specific embodiment and with reference to accompanying drawing：
Electric light opens the light or optical attenuator is a kind of waveguide device of semi-conducting material.The main optical waveguide layer of waveguide is semiconductor
Material, such as silicon.The thermal balance in electrooptical switching or optical attenuator in order to solve existing silicon-based electro-optic PIN diode composition is asked
The electric light for the single mode operation that topic and operating efficiency problem are constituted there is provided several structures based on heat balance method of the present invention is opened
Close or optical attenuator.
Fig. 1 is the structural representation of electrooptical switching disclosed by the invention or optical attenuator.As shown in figure 1, electrooptical switching or
Optical attenuator 80 includes a MZI structure 81, and MZI structures 81 include two parallel waveguide arms, i.e. first wave guide arm 1 and second
Waveguide arm 2.First wave guide arm 1 includes waveguide capacitor structure 13, and second waveguide arm 2 includes waveguide capacitor structure 14.First
External first electric signal source 15 of waveguide arm 1, external second electric signal source 16 of second waveguide arm 2.Acted in the first electric signal source 15
Under, the carriers concentration of waveguide capacitor structure 13 of first wave guide arm 1 is varied widely；Acted in the second electric signal source 16
Under, the carriers concentration of waveguide capacitor structure 14 of second waveguide arm does not change, or carrier concentration change is less than
The carriers change in concentration of waveguide capacitor structure 13 of first wave guide arm 1.In the first electric signal source 15 and the second electric signal source
Under 16 collective effects, the temperature change of first wave guide arm 1 and second waveguide arm 2 is same or like.
In certain embodiments, the waveguide capacitor of the waveguide capacitor structure 13 of first wave guide arm 1 and second waveguide arm 2
Structure 14 is the waveguide capacitor structure as disclosed in United States Patent (USP) 7817881.
In further embodiments, the waveguide electric capacity of the waveguide capacitor structure 13 of first wave guide arm 1 and second waveguide arm 2
Device structure 14 is the ridge waveguide structure using semiconductor intrinsic area as core area.The both sides flat board area of the ridge waveguide of first wave guide arm 1
Doped region doping type it is opposite；The flat board area of the ridge waveguide of second waveguide arm 2 includes two or more doped regions,
Divide the both sides of the wave guide ridge of the row ridge waveguide, the doping type of the doped region can be with identical or opposite.
Fig. 2 is that the present invention discloses the signal of one embodiment of electrooptical switching or optical attenuator in Fig. 1 at AA ' sections
Figure.As shown in Fig. 2 in this embodiment, the doping of the wave guide ridge both sides of the ridge waveguide of first wave guide arm 1 and second waveguide arm 2
The type in area is on the contrary, constitute PIN diode structure, and ridge waveguide 10 includes the wave guide ridge 11 as waveguide core region, ridge waveguide 20
Including the wave guide ridge 21 as waveguide core region.The p-type doped region 5 of ridge waveguide 10 is by the doped P-type semiconductor in the left side of flat board area 12
Constitute；The n-type doping area 7 of ridge waveguide 10 is made up of the doped N-type semiconductor in the right side of flat board area 12；The p-type doping of ridge waveguide 10
There are an additional electrodes 6 top of area 5, and there are an additional electrodes 8 top of n-type doping area 7, can be by additional electrodes 6
Carry out heavy doping to ensure Ohmic contact with the region of 8 lower sections.The p-type doped region 33 of ridge waveguide 20 is by the right side of flat board area 22 through mixing
Miscellaneous P-type semiconductor is constituted；The n-type doping area 31 of ridge waveguide 20 is made up of the doped N-type semiconductor in the left side of flat board area 22；Ridge waveguide
There are an additional electrodes 34 20 top of p-type doped region 33, and there are an additional electrodes 32 top of n-type doping area 31, can be with
Carry out heavy doping to ensure Ohmic contact by the region to the lower section of additional electrodes 34 and 32.
In Fig. 2, the maximum difference of ridge waveguide 10 and ridge waveguide 20 is the doped region in their both sides flat board area 12 and 22
Doping concentration it is different, doping concentration the mixing less than the flat board area 12 of ridge waveguide 10 of the doped region in the flat board area 22 of ridge waveguide 20
The doping concentration in miscellaneous area.The electrode 6 of the top of p-type doped region 5 of ridge waveguide 10 connects an electric signal source；The N-type of ridge waveguide 10
The electrode 8 of the top of doped region 7 is connected with the electrode 32 of the top of n-type doping area 31 of ridge waveguide 20, and connects the ground wire of device；
The electrode 34 of the top of p-type doped region 33 of ridge waveguide 20 connects another electric signal source.Due to p-type doped region and n-type doping area
Doping concentration be highest carrier concentration that intrinsic region can be maintained, the doping in p-type doped region and n-type doping area can be regarded as
It is carrier injection source.When carrier concentration and doping concentration (i.e. the p-type doped region and n-type doping area majority current-carrying of intrinsic region
Son concentration) it is identical when, PIN diode can enter electrode injection pattern, now carrier need fill be located at additional electrodes it
Between whole silicon materials region so that the total power consumption of device steeply rises.Under the power same case of two waveguide arms,
The temperature variation of wave guide ridge 21 and the difference very little of wave guide ridge 11 can be ignored, therefore two waveguides as caused by temperature
The refractive index variable quantity of arm is consistent.Due to doped region of the doping concentration than first wave guide arm 1 of the doped region of second waveguide arm 2
Doping concentration is low, and intrinsic region carriers change in concentration amount several orders of magnitude smaller than ridge waveguide 10 of ridge waveguide 20 are (by ridge waveguide
20 both sides doping concentration is determined) so that ridge waveguide 20 is just compared as the refractive index variable quantity caused by carrier concentration variable quantity
Ridge waveguide 10 it is much smaller.So, it is ensured that electrooptical switching or optical attenuator ridge waveguide 10 and ridge waveguide in the case of work
Thermal balance between 20, influence of the temperature to the variations in refractive index of two arms is weakened severely, i.e. the first wave guide arm of MZI structures
Carrier is dense in variations in refractive index difference first wave guide arm 1 as caused by applied electronic signal source between 1 and second waveguide arm 2
Degree change is determined, so as to ensure that the operating efficiency of electrooptical switching or optical attenuator.
Fig. 3 is that the present invention discloses the signal of another embodiment of electrooptical switching or optical attenuator in Fig. 1 at AA ' sections
Figure.The p-type doped region 5 of ridge waveguide 10 is made up of the doped P-type semiconductor in left planar area of wave guide ridge 11；The N-type of ridge waveguide 10
Doped region 7 is made up of the doped N-type semiconductor in right planar area of wave guide ridge 11；The top of p-type doped region 5 of ridge waveguide 10 has one
Additional electrodes 6, and there are an additional electrodes 8 top of n-type doping area 7, can pass through the region to the lower section of additional electrodes 6 and 8
Heavy doping is carried out to ensure Ohmic contact.The doping type of the doped region in the both sides flat board area 22 of wave guide ridge 21 is identical, that is, adulterates
Doped p-type semiconductor is constituted respectively by the flat board area of the left and right sides of wave guide ridge 21 for area 35 and doped region 37, and the He of doped region 35
Respectively there are an additional electrodes 36 and 38 37 tops, can carry out heavy doping to ensure by the region of the lower section of additional electrodes 36 and 38
Ohmic contact.It note that in this embodiment, the substrate of ridge waveguide 20 is p-type.
In Fig. 3, the doping type of the doped region in the flat board area 22 of the both sides of wave guide ridge 21 of ridge waveguide 20 is all p-type doping,
I.e. wave guide ridge 21 constitutes a PIP structure with both sides doped region 35 and 37, equivalent to resistance.On the p-type doped region 5 of ridge waveguide 10
The electrode 6 of side connects an electric signal source；The left side doping of the electrode 8 and ridge waveguide 20 of the top of n-type doping area 7 of ridge waveguide 10
The electrode 36 of the top of area 35 is connected, and connects the ground wire of device；The electrode 38 of the top of right side doped region 37 of ridge waveguide 20 connects
Connect another electric signal source.
In other embodiments, if the substrate of ridge waveguide 20 is N-type, the both sides flat board area 22 of wave guide ridge 21 of ridge waveguide 20
The doping type of doped region be N-type, so that a NIN structure is constituted, equivalent to resistance.
In the embodiment shown in fig. 3, ridge waveguide 10 is a PIN diode, and ridge waveguide 20 is a PIP structure,
That is resistance.Under the power same case of two waveguide arms, the temperature variation difference very little of ridge waveguide 10 and ridge waveguide 20 can
To ignore, so that two waveguide arm variations in refractive index are consistent as caused by temperature, while in the intrinsic of ridge waveguide 10
Area's carriers concentration can substantially increase, and the intrinsic region carriers concentration of ridge waveguide 20 will not change.So, it is ensured that
The thermal balance of electrooptical switching or optical attenuator in the case of work between ridge waveguide 10 and ridge waveguide 20, temperature is to two arms
The influence of variations in refractive index be cancelled, i.e. variations in refractive index between the first wave guide arm 1 and second waveguide arm 2 of MZI structures
In difference first wave guide arm 1 caused by applied electronic signal source carrier concentration change determine so that ensure that electrooptical switching or
The operating efficiency of optical attenuator.
Fig. 4 is that the present invention discloses the signal of another embodiment of electrooptical switching or optical attenuator in Fig. 1 at AA ' sections
Figure.As shown in figure 4, the p-type doped region 5 of ridge waveguide 10 is made up of the right side doped p-type semiconductor of flat board area 12；The N of ridge waveguide 10
Type doped region 7 is made up of the left side doped N-type semiconductor of flat board area 12；There is power-up outside one top of p-type doped region 5 of ridge waveguide 10
Pole 6, and there are individual additional electrodes 8 top of n-type doping area 7, can be carried out by the region to the lower section of additional electrodes 6 and 8 heavily doped
It is miscellaneous to ensure Ohmic contact.The flat board area 22 of ridge waveguide 20 includes three doped regions, and the first doped region 39 is leaned on positioned at wave guide ridge 21
It is remote that the side of nearly ridge waveguide 10 (i.e. close to first wave guide arm 1), the second doped region 41 and the 3rd doped region 43 are located at wave guide ridge 21
From the side of ridge waveguide 10 (i.e. away from first wave guide arm 1), and the second doped region 41 relative to the 3rd doped region 43 close
The side of ridge waveguide 10 (i.e. close to first wave guide arm 1), between the second doped region 41 and the 3rd doped region 43 at a distance.
In this embodiment, the first doped region 39 and the doping of the second doped region 41 and the substrate of the ridge waveguide 20 of second waveguide arm 2 are partly led
Body type identical dopant, the 3rd doped region 43 doping dopant opposite with aforesaid substrate semiconductor type, that is, work as ridge ripple
When the substrate for leading 20 is p-type, the first doped region 39 and the equal doped p-type dopant of the second doped region 41, the 3rd doped region 43 doping N
Type dopant；When the substrate of ridge waveguide 20 is N-type, the first doped region 39 and the equal doped N-type dopant of the second doped region 41, the
The doped p-type dopant of three doped region 43.First doped region 39 of ridge waveguide 20 and the top of the second doped region 41 respectively have one it is additional
Also there are individual additional electrodes 44 electrode 40 and 42, the top of the 3rd doped region 43, can be to passing through the lower section of additional electrodes 40,42 and 44
Region carries out heavy doping to ensure Ohmic contact.In other embodiments, a little changes can be done to the structure of second waveguide arm 2,
Such as position of increase doped region and adjustment doped region, but should all fall in scope disclosed by the invention.
In the embodiment shown in fig. 4, by taking the substrate p-type of ridge waveguide 20 as an example, ridge waveguide 20 is a PIP structure, phase
When in resistance, and the second doped region 41 and the 3rd doped region 43 and they the distance between together constitute the poles of PIN bis-
Pipe.The ground wire of the interface unit of electrode 8 of the top of n-type doping area 7 of ridge waveguide 10；The electricity of the top of p-type doped region 5 of ridge waveguide 10
Pole 6 is connected with the first doped region 39 of ridge waveguide 20, the electrode 40,42 of the top of the second doped region 41, and connects one respectively
Individual electric signal source, is that ridge waveguide 10 and ridge waveguide 20 provide electric signal；The electrode 44 of the top of the 3rd doped region 43 of ridge waveguide 20
The ground wire of interface unit.Ridge waveguide 10 constitutes a PIN diode, and ridge waveguide with p-type doped region 5 and n-type doping area 7
Second doped region 41 and the 3rd doped region 43 on 20 right sides also constitute a PIN diode.Ridge waveguide 10 PIN diode and
In the case of the power identical of PIN diode of the ridge waveguide 20 away from the side of ridge waveguide 10, the intrinsic region temperature of ridge waveguide 10
Intrinsic region temperature variation difference very little of the variable quantity with ridge waveguide 20 is spent, so as to reach thermal balance.Also, due to ridge waveguide 20
The all doped P-type semiconductor of the doped region 39 and 41 of both sides is constituted, so ridge waveguide 20 is in the presence of electric signal source, ridge waveguide
20 intrinsic region carriers concentration will not change.So, it is ensured that electric light open the light or optical attenuator work situation
Thermal balance between lower ridge waveguide 10 and ridge waveguide 20, influence of the temperature to the variations in refractive index of two arms is cancelled, i.e. MZI knots
Variations in refractive index difference first wave guide as caused by applied electronic signal source between the first wave guide arm 1 and second waveguide arm 2 of structure
Carrier concentration change is determined in arm 1, so as to ensure that the operating efficiency of electrooptical switching or optical attenuator.
Fig. 5 is that the present invention discloses the signal of another embodiment of electrooptical switching or optical attenuator in Fig. 1 at AA ' sections
Figure.As shown in figure 5, one layer of oxide skin(coating) 26 of ridge waveguide 10 and the covering of the top of ridge waveguide 20, and oxide skin(coating) 26 has some logical
Over etching formation electrode contact hole, then fills the metal material as electrode in contact hole, so that electrode 23,24 is formed,
Respectively there are the additional electrodes 27 and 28 for passing through oxide skin(coating) 26 above the both sides doped region of 27 and 28, i.e. ridge waveguide 10, can be with
Carry out heavy doping to ensure Ohmic contact by the region to the lower section of additional electrodes 27 and 28.On the both sides doped region of ridge waveguide 20
Respectively there are the additional electrodes 23 and 24 for passing through oxide skin(coating) 26 side, can be entered by the region to the lower section of additional electrodes 23 and 24
Row heavy doping ensures Ohmic contact.In oxide skin(coating) 26 and each electrode disposed thereon semi-conducting material 25, such as polysilicon, germanium,
The suitable material such as Group III-V compound semiconductor.Also, by being doped to semi-conducting material 25, make semi-conducting material
The PN junction of reverse bias is formed inside 25 between positive and negative electrode, so that the semi-conducting material 25 on oxide skin(coating) 26 turns into good
Heat-conducting layer, but not introduce between electrode electric current.
In the embodiment shown in fig. 5, be with the maximum difference of common electrooptical switching structure it oxide skin(coating) 26 and
Electrode metal layer disposed thereon semi-conducting material 25.Because the semi-conducting material 25 of deposition has coated the fabulous electricity of pyroconductivity
Pole metal level so that the heat energy of lower substrate material is transferred to ridge ripple by electrode metal layer and semi-conducting material at ridge waveguide 10
Lead at 20, so in addition to conducting heat energy by backing material, this semi-conducting material 25 becomes ridge waveguide 10 and ridge ripple
Lead the other passage of heat between 20.As it was previously stated, a kind of example structure shown in Fig. 5, by oxide skin(coating) and
Electrode metal layer disposed thereon semi-conducting material, to reduce the temperature difference between ridge waveguide 10 and ridge waveguide 20, so as to reduce
The variations in refractive index difference as caused by temperature.Between electrooptical switching or the first wave guide arm 1 and second waveguide arm 2 of optical attenuator
Carrier concentration change is determined in variations in refractive index difference first wave guide arm 1 caused by applied electronic signal source, so as to ensure that
The operating efficiency of electrooptical switching or optical attenuator.In some embodiments, it is also possible to deposit half on the architecture basics shown in Fig. 4
Conductor material, strengthens the counteracting influenceed on temperature, improves the efficiency of device.
The present invention is described in detail embodiment of above, and those skilled in the art can be according to the above description
Many variations example is made to the present invention.Thus, some of embodiment details should not constitute limitation of the invention, the present invention
It regard the scope defined using appended claims as protection scope of the present invention.
Claims (7)
1. a kind of electrooptical switching or optical attenuator, including a MZI structure, the MZI structures include two parallel waveguide arms,
That is first wave guide arm and second waveguide arm, the first wave guide arm and second waveguide arm include a waveguide capacitor structure,
It is characterized in that：
External first electric signal source of first wave guide arm, external second electric signal source of second waveguide arm；
Under first electric signal source effect, the waveguide capacitor structure carriers concentration of the first wave guide arm becomes
Change；
Under second electric signal source effect, the waveguide capacitor structure carriers concentration of the second waveguide arm does not occur
Change, or carrier concentration change is less than the waveguide capacitor structure carriers change in concentration of the first wave guide arm；
Under first electric signal source and the effect of the second electric signal source, the temperature of the first wave guide arm and second waveguide arm becomes
Change same or like.
2. electrooptical switching according to claim 1 or optical attenuator, it is characterised in that
Waveguide capacitor structure in the first wave guide arm and second waveguide arm is to be used as core area using semiconductor intrinsic area
Ridge waveguide structure；
The doping type of the doped region in the both sides flat board area of the ridge waveguide of the first wave guide arm is opposite；
The flat board area of the ridge waveguide of the second waveguide arm includes two or more doped regions, point row ridge waveguide
The both sides of wave guide ridge, the doping type of the doped region can be with identical or opposite.
3. electrooptical switching according to claim 2 or optical attenuator, it is characterised in that
The doping type of the doped region of the wave guide ridge both sides of the ridge waveguide of the first wave guide arm is on the contrary, constitute PIN diode knot
Structure；
The doping type of the doped region of the wave guide ridge both sides of the ridge waveguide of the second waveguide arm is on the contrary, constitute PIN diode knot
Structure, the doping concentration of the doped region of the second waveguide arm is less than the doping concentration of the doped region of the first wave guide arm.
4. electrooptical switching according to claim 2 or optical attenuator, it is characterised in that
The doping type of the doped region of the wave guide ridge both sides of the ridge waveguide of the first wave guide arm is on the contrary, constitute PIN diode knot
Structure；
The doping type of the doped region of the wave guide ridge both sides of the ridge waveguide of the second waveguide arm is identical, constitutes NIN or PIP knots
Structure.
5. electrooptical switching according to claim 2 or optical attenuator, it is characterised in that
The flat board area of the ridge waveguide of the second waveguide arm includes three doped regions, wherein the first doped region is located at the ridge waveguide
Wave guide ridge close to the side of the first wave guide arm, the second doped region and the 3rd doped region are located at the wave guide ridge of the ridge waveguide
Side away from the first wave guide arm；
Second doped region is relative to the 3rd doped region in the side close to the first wave guide arm；
First doped region and the second doped region doping and the substrate semiconductor type phase of the ridge waveguide of the second waveguide arm
Same dopant, the 3rd doped region doping dopant opposite with aforesaid substrate semiconductor type.
6. electrooptical switching according to claim 1 or 2 or optical attenuator, it is characterised in that
The first wave guide arm is with second waveguide arm top covered with one layer of oxide skin(coating), and the oxide skin(coating) passes through to etch and formed
The metal material as electrode is filled with electrode contact hole, the electrode contact hole；
The oxide skin(coating) and the metal material disposed thereon semi-conducting material；
By being doped the semi-conducting material, make to form reversely inclined between positive and negative electrode inside the semi-conducting material
The PN junction put, so that the semi-conducting material on the oxide skin(coating) introduces electricity as good heat-conducting layer but not between electrode
Stream.
7. electrooptical switching according to claim 6 or optical attenuator, it is characterised in that the semi-conducting material is polycrystalline
Silicon.
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| JP2017156454A (en) * | 2016-02-29 | 2017-09-07 | 国立研究開発法人産業技術総合研究所 | Optical modulator and manufacturing method therefor |
| CN105974613B (en) * | 2016-07-15 | 2019-01-25 | 北京大学 | Electric light lumped modulator |
| US11105975B2 (en) * | 2016-12-02 | 2021-08-31 | Rockley Photonics Limited | Waveguide optoelectronic device |
| CN113759460A (en) * | 2021-09-14 | 2021-12-07 | 苏州微光电子融合技术研究院有限公司 | Polarization-independent variable optical attenuator |
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| CN101135749A (en) * | 2006-08-30 | 2008-03-05 | 中国科学院半导体研究所 | Double electric capacity metal oxide semiconductor silicon based high speed high modulate efficiency electro optic modulator |
| CN101652702A (en) * | 2007-03-29 | 2010-02-17 | 住友大阪水泥股份有限公司 | Optical waveguide element, and method for restraining temperature crosstalk of optical waveguide element |
| CN202433633U (en) * | 2012-01-17 | 2012-09-12 | 上海硅通半导体技术有限公司 | Electro-optical switch or optical attenuator |
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| EP1605303B1 (en) * | 2003-03-19 | 2018-01-03 | Nippon Telegraph And Telephone Corporation | Optical switch |
| US7817881B2 (en) * | 2006-06-01 | 2010-10-19 | Bing Li | Circuit architecture for electro-optic modulation based on free carrier dispersion effect and the waveguide capacitor structures for such modulator circuitry using CMOS or Bi-CMOS process |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101135749A (en) * | 2006-08-30 | 2008-03-05 | 中国科学院半导体研究所 | Double electric capacity metal oxide semiconductor silicon based high speed high modulate efficiency electro optic modulator |
| CN101652702A (en) * | 2007-03-29 | 2010-02-17 | 住友大阪水泥股份有限公司 | Optical waveguide element, and method for restraining temperature crosstalk of optical waveguide element |
| CN202433633U (en) * | 2012-01-17 | 2012-09-12 | 上海硅通半导体技术有限公司 | Electro-optical switch or optical attenuator |
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