CN105629379A - Silicon base electro-optical tunable waveguide structure based on interpolation-type MOS structure - Google Patents

Silicon base electro-optical tunable waveguide structure based on interpolation-type MOS structure Download PDF

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Publication number
CN105629379A
CN105629379A CN201610031805.1A CN201610031805A CN105629379A CN 105629379 A CN105629379 A CN 105629379A CN 201610031805 A CN201610031805 A CN 201610031805A CN 105629379 A CN105629379 A CN 105629379A
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silicon
waveguide
ohmic contact
finger
type mos
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肖希
李淼峰
王磊
杨奇
余少华
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Wuhan Research Institute of Posts and Telecommunications Co Ltd
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Wuhan Research Institute of Posts and Telecommunications Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12061—Silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12142—Modulator

Abstract

The invention discloses a silicon base electro-optical tunable waveguide structure based on an interpolation-type MOS structure, and relates to a silicon base electro-optical tunable waveguide device in the optical communication field. The silicon base electro-optical tunable waveguide structure comprises a silicon base made of monocrystalline silicon materials, a landfill silicon dioxide layer, and an epitaxial silicon layer made of monocrystalline silicon materials, which are arranged from bottom to top. The epitaxial silicon layer is provided with a silicon base electro-optical tunable waveguide based on the interpolation-type MOS structure, and the silicon base electro-optical tunable waveguide comprises a silicon waveguide lower half layer, a gate oxide layer, and a silicon waveguide upper half layer. The silicon waveguide lower half layer comprises a lower waveguide area, a lower flat area, and a lower ohmic contact area. A second electrode is disposed on the lower ohmic contact area, and the gate oxide layer is disposed on the outer surface of the lower waveguide area. The silicon waveguide upper half layer comprises an upper waveguide area, an upper flat area, and an upper ohmic contact area. A first electrode is disposed on the upper ohmic contact area. The silicon base electro-optical tunable waveguide structure is advantageous in that the full overlapping of the optical field with carrier accumulation area can be realized, and the tuning efficiency can be greatly improved, and therefore the realization of the compacter and more efficient silicon base electro-optical tuning device can be facilitated.

Description

Silicon-based electro-optic frequency-modulated wave guide structure based on finger-inserting type MOS structure
Technical field
The present invention relates to the adjustable waveguide device of the silicon-based electro-optic in optical communication field, it is specifically related to a kind of silicon-based electro-optic frequency-modulated wave guide structure based on finger-inserting type MOS (metal-oxid-semiconductor, mos field effect transistor) structure.
Background technology
Tunable silica-based fiber waveguide is the critical component in optical communication system, and tunable silica-based fiber waveguide can be used in photomodulator, photoswitch, router, adjustable optical attenuator and the active light core devices such as tunable wavelength filter and laser instrument; The high speed light modulation function of tunable silica-based fiber waveguide is typically based on the silica-based electrooptic effect of high speed.
The silicon single crystal of pure unstrained is the crystal that the inverting of a kind of center is symmetrical, this silicon single crystal is absent from Pockels (linear electrooptic) effect, and the Kerr of silicon (second order electric light) effect and Franz-Keldish (Fu Langzi-Kai Erdishi) effect are also extremely faint; Even if applying 105The electric field of V/cm, the refraction index changing of generation is still less than 10-5, utilize Kerr effect and Franz Keldish effect to realize Electro-optical Modulation and unrealistic.
In silicon materials, maximally effective electrooptic effect is exactly plasma dispersion effect, and at present, commercial silicon-based electro-optical modulator realizes mainly through plasma dispersion effect; 1987, occur in that the approximate expression of gas ions effect of dispersion:
For the optical signal of 1.31 mum wavelengths, the expression formula of plasma dispersion effect is:
Δ n = - [ 6.2 × 10 - 22 ΔN e + 6.0 × 10 - 18 ( ΔN h ) 0.8 ] Δ α = 6.0 × 10 - 18 ΔN e + 4.0 × 10 - 18 ΔN h - - - ( 1 )
For the light of 1.55 mum wavelengths, plasma dispersion relation expression formula is:
Δ n = - [ 8.8 × 10 - 22 ΔN e + 8.5 × 10 - 18 ( ΔN h ) 0.8 ] Δ α = 8.5 × 10 - 18 ΔN e + 6.0 × 10 - 18 ΔN h - - - ( 2 )
In formula (1) and (2), �� n free carrier concentration changes the variations in refractive index caused, and �� �� is the change of the absorptance that free carrier concentration change causes, and �� Ne is electronic variable amount, �� Nh is hole concentration variable quantity, and unit is cm-3. It practice, the effective refractive index changes delta neff of optical signal is also relevant to optical field distribution, its expression formula is:
��neff=�� �� | E (x, y) |2����n(x,y)dxdy(3)
�� E �� in formula (3)2It is distributed for the normalized intensity of light field in fiber waveguide, by formula (3) it can be seen that the size of �� neff additionally depends on the overlap integral of light field and carrier concentration variation zone.
At present, high speed electro-optical based on silica-based plasma dispersion effect is modulated typically via PN junction (on silicon chip one piece complete, making it while forming N-type semiconductor with different doping process, another side forms P-type semiconductor) structure and mos capacitance structure realize.
PN junction structure processing technique is relatively easy, complete and standard CMOS (ComplementaryMetalOxideSemiconductor, complementary metal oxide semiconductors (CMOS)) process compatible. Produce carrier depletion effect, the width of the free space charged region of regulation and control PN junction interface by loading reverse biased on PN junction, reach to change the purpose of fiber waveguide center carrier concentration. But, when the doping content of PN junction is in 1017��1018cm-3During scope, the width of free space charged region is only about 100nm; And the width of ordinary silicon based optical waveguide is about this huge size mismatch of 500nm, light field and free space charged region and causes that the modulation efficiency of silicon-based modulator based on reverse PN junction is low.
Mos capacitance structural manufacturing process relative complex, relates to grid oxide layer preparation and epitaxial silicon process, also needs to repeatedly photoetching and etching simultaneously. But the modulation efficiency of mos capacitance structure is more much higher than reverse PN junction; By tying applying positive bias at MOS, it is possible to make the carrier concentration change of grid oxide layer both sides reach 1018��1019cm-3Magnitude. Its V��L coefficient has been 0.2V cm by experimental verification, it was demonstrated that the modulation efficiency of MOS knot is about 10 times of reverse PN junction.
But, existing MOS structure is only capable of tens nanometers near grid oxide layer and produces carrier concentration change, and light field is overlapping with charge carrier accumulation region more weak, and modulation efficiency is difficult to further raising.
Summary of the invention
For the defect existed in prior art, present invention solves the technical problem that for: light field is fully overlapped with charge carrier accumulation region, increases substantially tuning efficiency. The present invention is advantageously implemented more compact, more efficient silicon-based electro-optic tuning device.
For reaching object above, silicon-based electro-optic frequency-modulated wave guide structure based on finger-inserting type MOS structure provided by the invention, including SOI wafer, this wafer includes the silicon epitaxial layers of the silicon substrate of monocrystal silicon material, landfill silicon dioxide layer and the monocrystal silicon material that arrange from the bottom to top; Silicon epitaxial layers is provided with the silicon-based electro-optic based on finger-inserting type MOS structure and tunes waveguide, the second electrode that this waveguide includes under the silicon waveguide arranged from the bottom to top half storey in half storey, grid oxide layer and silicon waveguide and the first electrode being arranged in silicon waveguide on half storey, is arranged under silicon waveguide on half storey;
Under described silicon waveguide, half storey includes doping type and is the lower waveguide section of P type or N-type, lower flat board district and lower ohmic contact regions; Lower waveguide section is used for carrying light field, and the doping content of lower waveguide section is 1017��1018cm-3; Lower flat board district is positioned at the outside of lower waveguide section, and lower flat board district is used for reducing waveguide series resistance, and the doping content in lower flat board district is 1018��1019cm-3; Lower ohmic contact regions is positioned at the outside in lower flat board district, and the doping content of lower ohmic contact regions is 1019��1021cm-3; Second electrode is positioned on lower ohmic contact regions; Described grid oxide layer is positioned at the outer surface of lower waveguide section, and the thickness of grid oxide layer is 1��50nm;
In described silicon waveguide, half storey includes identical and contrary with half storey under the silicon waveguide upper waveguide section of doping type, upper flat plate district and upper ohmic contact regions; Upper waveguide section is covered on grid oxide layer, and upper waveguide section is used for carrying light field, and the doping content of upper waveguide section is 1017��1018cm-3, described lower waveguide section, grid oxide layer and upper waveguide section form finger-inserting type MOS knot; Described upper flat plate district is positioned at the outside of waveguide section, and upper flat plate district is used for reducing waveguide series resistance, and the doping content in upper flat plate district is 1018��1019cm-3; Described upper ohmic contact regions is positioned at the outside in upper flat plate district, and the doping content of upper ohmic contact regions is 1019��1021cm-3, described first electrode is positioned on ohmic contact regions.
On the basis of technique scheme, the described silicon-based electro-optic based on finger-inserting type MOS structure tunes deposition in waveguide the SiO2 cover layer of passivation.
On the basis of technique scheme, described upper waveguide section, upper flat plate district and upper ohmic contact regions form smooth upper surface by CMP.
On the basis of technique scheme, when this structure realizes Electro-optical Modulation, the silicon-based electro-optic based on finger-inserting type MOS structure is tuned waveguide and constitutes conventional modulator structure; When first electrode and the second electrode are applied different voltage, it is formed about carrier accumulation at grid oxide layer or exhausts, being tuned effective refractive index and the absorption loss of light field in waveguide by plasma dispersion effect; It is the intensity of optical signal, phase place or polarization variations by the change transitions of effective refractive index and absorption loss, thus realizing Electro-optical Modulation function.
On the basis of technique scheme, the resistivity of described silicon substrate is 10��10000ohm cm.
On the basis of technique scheme, the refractive index of described landfill silicon dioxide layer is 1.42��1.47, and thickness is 0.1��5um.
On the basis of technique scheme, the intrinsic doping type of described silicon epitaxial layers is P type or N-type, and intrinsic doping content is 1015��1016cm-3, thickness is 0.1��1um.
On the basis of technique scheme, the material of described grid oxide layer is at least one in SiO2, SiON, Si3N4, Al2O3, Ta2O5, TiO2, HfO2, ZrO2.
On the basis of technique scheme, when described lower waveguide section, lower flat board district and lower ohmic contact regions are N-type, described upper waveguide section, upper flat plate district and upper ohmic contact regions are P type; When described lower waveguide section, lower flat board district and lower ohmic contact regions are P type, described upper waveguide section, upper flat plate district and upper ohmic contact regions are N-type.
On the basis of technique scheme, the interface shape of described finger-inserting type MOS knot is rectangle, trapezoidal, triangular form or arc.
Compared with prior art, it is an advantage of the current invention that:
The present invention, by forming the MOS knot of finger-inserting type in silica-based waveguides, extends the area of unit length MOS junction interface, and then light field is overlapped with carrier accumulation district fully. In view of this, compared with tying waveguide with the MOS transmitted, the present invention can significantly mention tuning efficiency, is advantageously implemented more compact, more efficient silicon-based electro-optic tuning device.
Accompanying drawing explanation
Fig. 1 is the structural representation of the silicon-based electro-optic frequency-modulated wave guide structure based on finger-inserting type MOS structure in the embodiment of the present invention;
Fig. 2 is the slotting structural representation referring to that MOS junction interface is shaped as single rectangle in the embodiment of the present invention;
The slotting finger MOS junction interface that Fig. 3 is in the embodiment of the present invention is shaped as trapezoidal structural representation;
Fig. 4 is the slotting structural representation referring to that MOS junction interface is shaped as triangle in the embodiment of the present invention;
Fig. 5 is the slotting structural representation referring to that MOS junction interface is shaped as arc in the embodiment of the present invention;
Fig. 6 is the finger-inserting type MOS knot in the embodiment of the present invention, conventional MOS knot, tradition PN junction electro-optical tuning efficiency trend figure under different reverses biased.
In figure: 10-silicon substrate, 20-fills silicon dioxide layer, waveguide section under 301-, flat board district under 302-, ohmic contact regions under 303-, 40-grid oxide layer, the upper waveguide section of 501-, 502-upper flat plate district, the upper ohmic contact regions of 503-, 60-SiO2 cover layer, 701-the first electrode, 702-the second electrode.
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is described in further detail.
Shown in Figure 1, the silicon-based electro-optic frequency-modulated wave guide structure based on finger-inserting type MOS structure in the embodiment of the present invention, including SOI (Silicon-On-Insulator, silicon in dielectric substrate) wafer, this wafer includes the silicon substrate 10 of monocrystal silicon material, in order to reduce the loss of microwave electrical signal, the resistivity of silicon substrate 10 is 10��10000ohm cm (for 5000ohm cm in the present embodiment). Being provided with landfill silicon dioxide layer 20 on silicon substrate 10, the refractive index of landfill silicon dioxide layer 20 is 1.42��1.47, and thickness is 0.1��5um (refractive index filling silicon dioxide layer 20 in the present embodiment is 1.45, and thickness is 3um). Being provided with the silicon epitaxial layers of monocrystal silicon material on landfill silicon dioxide layer 20, the intrinsic doping type of silicon epitaxial layers is P type or N-type, and intrinsic doping content is 1015��1016cm-3, thickness is 0.1��1um (in the present embodiment, the intrinsic doping type of silicon epitaxial layers is P type, and thickness is 0.5um).
Silicon epitaxial layers is provided with the silicon-based electro-optic based on finger-inserting type MOS structure and tunes waveguide, the second electrode 702 that this waveguide includes under the silicon waveguide arranged from the bottom to top half storey in half storey, grid oxide layer 40 and silicon waveguide and the first electrode 701 being arranged in silicon waveguide on half storey, is arranged under silicon waveguide on half storey.
Under silicon waveguide, half storey is formed through techniques such as photoetching, etching, ion implanting and annealing, and it includes the lower waveguide section 301 of doping type identical (P type or N-type), lower flat board district 302 and lower ohmic contact regions 303.
Lower waveguide section 301 is the latter half of fiber waveguide, and it is for carrying light field and producing overlapping with the carrier within light field; The doping content of lower waveguide section 301 is 1017��1018cm-3, its upper surface forms rough structure by methods such as dry etching, wet etching or thermal oxides.
Lower flat board district 302 is positioned at the outside of lower waveguide section 301, and lower flat board district 302 is used for reducing waveguide series resistance, and the doping content in lower flat board district 302 is 1018��1019cm-3��
Lower ohmic contact regions 303 is positioned at the outside in lower flat board district 302, and the doping content of lower ohmic contact regions 303 is 1019��1021cm-3; Second electrode 702 is positioned on lower ohmic contact regions 303, and lower ohmic contact regions 303 is for forming good Ohmic contact with the second electrode 702.
Grid oxide layer 40 is arranged at the outer surface of lower waveguide section 301 by the mode of thin film deposition or growth, and grid oxide layer 40 is for half storey under silicon waveguide and forms electric isolation in silicon waveguide between half storey; The thickness of grid oxide layer 40 is 1��50nm (for 25nm in the present embodiment), and material is the insulating dielectric materials that the CMOS such as SiO2, SiON, Si3N4, Al2O3, Ta2O5, TiO2, HfO2, ZrO2 are conventional.
In silicon waveguide, half storey is integrated by the technique such as monocrystal silicon or polysilicon epitaxial, photoetching, etching, and it includes the identical upper waveguide section 501 of (P type or N-type) of doping type, upper flat plate district 502 and upper ohmic contact regions 503; In silicon waveguide, the doping type of half storey is contrary with the doping type of half storey under silicon waveguide: if half storey is N-type in silicon waveguide, then under silicon waveguide, half storey is P type, if half storey is P type in silicon waveguide, then under silicon waveguide, half storey is N-type.
Upper waveguide section 501 is covered on grid oxide layer 40, and upper waveguide section 501 is used for carrying light field, and its doping content is 1017��1018cm-3. Referring to shown in Fig. 1 to Fig. 5, lower waveguide section 301, grid oxide layer 40 and upper waveguide section 501 form finger-inserting type MOS knot, and the carrier making light field neighbouring with MOS knot produces overlapping. In the present embodiment, the interface shape (namely descending the structure of waveguide section 301 surface irregularity) of finger-inserting type MOS knot can be rectangle (as shown in Figure 2), trapezoidal (as shown in Figure 3), triangular form (as shown in Figure 4), arc (as shown in Figure 5), and other arbitrary periodicity or aperiodicity figure.
Upper flat plate district 502 is positioned at the outside of waveguide section 501, and upper flat plate district 502 is used for reducing waveguide series resistance, and the doping content in upper flat plate district 502 is 1018��1019cm-3��
Upper ohmic contact regions 503 is positioned at the outside in upper flat plate district 502, and the doping content of upper ohmic contact regions 503 is 1019��1021cm-3, the first electrode 701 is positioned on ohmic contact regions 503, and upper ohmic contact regions 503 is for forming good Ohmic contact with the first electrode 701.
Upper waveguide section 501, upper flat plate district 502 and upper ohmic contact regions 503 form smooth upper surface by CMP (chemically mechanical polishing) technique.
SiO2 cover layer 60, SiO2 cover layer 60 is had to be passivation layer based on deposition in the silicon-based electro-optic tuning waveguide of finger-inserting type MOS structure.
When the silicon-based electro-optic frequency-modulated wave guide structure based on finger-inserting type MOS structure in the embodiment of the present invention realizes Electro-optical Modulation, silicon-based electro-optic based on finger-inserting type MOS structure is tuned waveguide, constitutes the conventional modulator structures such as Mach-Zahnder interference device, Michelson interference device, micro-ring resonator. When first electrode 701 and the second electrode 702 are applied different voltage, it is formed about carrier accumulation at grid oxide layer 40 or exhausts, being tuned effective refractive index and the absorption loss of light field in waveguide by plasma dispersion effect. It is the intensity of optical signal, phase place or polarization variations by the change transitions of effective refractive index and absorption loss, thus realizing Electro-optical Modulation function.
Contrast below by with conventional MOS knot, tradition PN junction, illustrate present invention advantage in tuning efficiency.
Fig. 6 illustrates finger-inserting type MOS knot (in Fig. 6 corresponding word be finger-inserting type MOS) of the present invention, traditional MOS knot (in Fig. 6, corresponding word is common MOS knot), tradition PN junction (in Fig. 6, corresponding word is PN junction), electro-optical tuning efficiency under equal bias (the effective refractive index variable quantity produced by light field in waveguide is weighed). Known referring to Fig. 6, interface configuration, grid oxide layer thickness and doping content that silicon waveguide dimensions, finger-inserting type MOS are tied by the present invention are after optimizing, the effective refractive index change that finger-inserting type MOS knot produces is tied apparently higher than conventional MOS, and the tuning efficiency of finger-inserting type MOS knot is about 10 times of tradition PN junction.
The present invention is not limited to above-mentioned embodiment, for those skilled in the art, under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, and these improvements and modifications are also considered as within protection scope of the present invention. The content not being described in detail in this specification belongs to the known prior art of professional and technical personnel in the field.

Claims (10)

1. the silicon-based electro-optic frequency-modulated wave guide structure based on finger-inserting type MOS structure, including SOI wafer, this wafer includes the silicon epitaxial layers of the silicon substrate (10) of monocrystal silicon material, landfill silicon dioxide layer (20) and the monocrystal silicon material that arrange from the bottom to top; It is characterized in that: silicon epitaxial layers is provided with the silicon-based electro-optic based on finger-inserting type MOS structure and tunes waveguide, the second electrode (702) that this waveguide includes half storey in half storey under the silicon waveguide arranged from the bottom to top, grid oxide layer (40) and silicon waveguide and the first electrode (701) being arranged in silicon waveguide on half storey, is arranged under silicon waveguide on half storey;
Under described silicon waveguide, half storey includes doping type and is the lower waveguide section (301) of P type or N-type, lower flat board district (302) and lower ohmic contact regions (303); Lower waveguide section (301) is used for carrying light field, and the doping content of lower waveguide section (301) is 1017��1018cm-3; Lower flat board district (302) is positioned at the outside of lower waveguide section (301), and lower flat board district (302) is used for reducing waveguide series resistance, and the doping content of lower flat board district (302) is 1018��1019cm-3; Lower ohmic contact regions (303) is positioned at the outside of lower flat board district (302), and the doping content of lower ohmic contact regions (303) is 1019��1021cm-3; Second electrode (702) is positioned on lower ohmic contact regions (303); Described grid oxide layer (40) is positioned at the outer surface of lower waveguide section (301), and the thickness of grid oxide layer (40) is 1��50nm;
In described silicon waveguide, half storey includes identical and contrary with half storey under the silicon waveguide upper waveguide section (501) of doping type, upper flat plate district (502) and upper ohmic contact regions (503); Upper waveguide section (501) is covered on grid oxide layer (40), and upper waveguide section (501) are used for carrying light field, and the doping content of upper waveguide section (501) is 1017��1018cm-3, described lower waveguide section (301), grid oxide layer (40) and upper waveguide section (501) formation finger-inserting type MOS knot; Described upper flat plate district (502) is positioned at the outside of waveguide section (501), and upper flat plate district (502) are used for reducing waveguide series resistance, and the doping content of upper flat plate district (502) is 1018��1019cm-3; Described upper ohmic contact regions (503) is positioned at the outside of upper flat plate district (502), and the doping content of upper ohmic contact regions (503) is 1019��1021cm-3, described first electrode (701) is positioned on ohmic contact regions (503).
2. the silicon-based electro-optic frequency-modulated wave guide structure based on finger-inserting type MOS structure as claimed in claim 1, it is characterised in that: the described silicon-based electro-optic based on finger-inserting type MOS structure tunes deposition in waveguide the SiO2 cover layer (60) of passivation.
3. the silicon-based electro-optic frequency-modulated wave guide structure based on finger-inserting type MOS structure as claimed in claim 1, it is characterised in that: described upper waveguide section (501), upper flat plate district (502) and upper ohmic contact regions (503) form smooth upper surface by CMP.
4. the silicon-based electro-optic frequency-modulated wave guide structure based on finger-inserting type MOS structure as claimed in claim 1, it is characterised in that: when this structure realizes Electro-optical Modulation, the silicon-based electro-optic based on finger-inserting type MOS structure is tuned waveguide and constitutes conventional modulator structure; When first electrode (701) is applied different voltage with the second electrode (702), it is formed about carrier accumulation at grid oxide layer (40) or exhausts, being tuned effective refractive index and the absorption loss of light field in waveguide by plasma dispersion effect; It is the intensity of optical signal, phase place or polarization variations by the change transitions of effective refractive index and absorption loss, thus realizing Electro-optical Modulation function.
5. the silicon-based electro-optic frequency-modulated wave guide structure based on finger-inserting type MOS structure as described in any one of Claims 1-4, it is characterised in that: the resistivity of described silicon substrate (10) is 10��10000ohm cm.
6. the silicon-based electro-optic frequency-modulated wave guide structure based on finger-inserting type MOS structure as described in any one of Claims 1-4, it is characterised in that: the refractive index of described landfill silicon dioxide layer (20) is 1.42��1.47, and thickness is 0.1��5um.
7. the silicon-based electro-optic frequency-modulated wave guide structure based on finger-inserting type MOS structure as described in any one of Claims 1-4, it is characterised in that: the intrinsic doping type of described silicon epitaxial layers is P type or N-type, and intrinsic doping content is 1015��1016cm-3, thickness is 0.1��1um.
8. the silicon-based electro-optic frequency-modulated wave guide structure based on finger-inserting type MOS structure as described in any one of Claims 1-4, it is characterised in that: the material of described grid oxide layer (40) is at least one in SiO2, SiON, Si3N4, Al2O3, Ta2O5, TiO2, HfO2, ZrO2.
9. the silicon-based electro-optic frequency-modulated wave guide structure based on finger-inserting type MOS structure as described in any one of Claims 1-4, it is characterized in that: when described lower waveguide section (301), lower flat board district (302) and lower ohmic contact regions (303) are N-type, described upper waveguide section (501), upper flat plate district (502) and upper ohmic contact regions (503) are P type; When described lower waveguide section (301), lower flat board district (302) and lower ohmic contact regions (303) are P type, described upper waveguide section (501), upper flat plate district (502) and upper ohmic contact regions (503) are N-type.
10. the silicon-based electro-optic frequency-modulated wave guide structure based on finger-inserting type MOS structure as described in any one of Claims 1-4, it is characterised in that: the interface shape of described finger-inserting type MOS knot is rectangle, trapezoidal, triangular form or arc.
CN201610031805.1A 2016-01-18 2016-01-18 Silicon base electro-optical tunable waveguide structure based on interpolation-type MOS structure Pending CN105629379A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108803090A (en) * 2018-05-02 2018-11-13 上海交通大学 Electrooptic modulator based on silicon and vanadium dioxide composite waveguide
CN111665645A (en) * 2019-03-05 2020-09-15 苏州旭创科技有限公司 Electro-optical modulator

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