CN109244829A - Ge/GeSn heterolaser and preparation method thereof - Google Patents

Ge/GeSn heterolaser and preparation method thereof Download PDF

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CN109244829A
CN109244829A CN201811082940.4A CN201811082940A CN109244829A CN 109244829 A CN109244829 A CN 109244829A CN 201811082940 A CN201811082940 A CN 201811082940A CN 109244829 A CN109244829 A CN 109244829A
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gesn
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CN109244829B (en
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舒斌
张利锋
高玉龙
胡辉勇
王斌
王利明
韩本光
张鹤鸣
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Xidian University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3223—IV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3027—IV compounds

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
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Abstract

The invention discloses a kind of Ge/GeSn heterolasers and preparation method thereof.This method comprises: in the one Bragg reflection mirror layer of surface growth regulation of substrate；In Ge layers of one N-shaped of surface growth regulation of the first Bragg reflection mirror layer；In Ge layers of the first N-shaped of Ge layers of two N-shaped of surface growth regulation；GeSn layers are grown on Ge layers of the second N-shaped of surfaces；In GeSn layers of Ge layers of one p-type of surface growth regulation；In Ge layers of the first p-type of Ge layers of two p-type of surface growth regulation；In Ge layers of the second p-type of two Bragg reflection mirror layer of surface growth regulation；The first cylinder and the second cylinder are etched in obtained structure；Electrode is formed in first step and the second step；Ultimately form Ge/GeSn heterolaser.The present invention replaces traditional single Ge material by using GeSn material, improves luminous efficiency；Threshold current density is reduced by using P-I-N structure；In addition, preparation method simple process of the invention.

Description

Ge/GeSn heterolaser and preparation method thereof
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of Ge/GeSn heterolaser and preparation method thereof.
Background technique
It is well known that large scale integrated circuit shows the powerful signal processing function of electronics on silicon wafer, and global range Optical fiber communication network illustrate the superior transmission performance of photon.Si-based OEIC then combines the signal processing function of electronics Two big advantages of the transmission performance of energy and photon are to realize high-speed, low energy consumption, without the chip optical interconnection harassed.Commercialization at present Photoelectric device mostly use III-V group semi-conductor material, technique and large-scale integrated technique are incompatible, and use chip key The technical costs for closing silicon wafer is expensive, low output, causes heterogeneous integrate of the photoelectricity of iii-v and chip that cannot be widely accepted.
Semiconductor laser has energy conversion efficiency height, is easy to carry out high speed current-modulation, subminaturization, structure letter Single, service life just outstanding features such as long, be taken into account photoelectricity it is integrated in.However due to the limit of technique etc. System, there are no suitable on piece light sources.Light network can reduce resistance (RC) delay time and power consumption, on piece and short distance Data communication is very important.Group III-V semiconductor laser possesses performance best so far, but they have at This height, low output, the low disadvantage of integrated level are not suitable for producing in enormous quantities, so take a long time could be into for III-V semiconductor Enter the silicon manufacturing works of mainstream.IV race material have always been considered as be source material on silicon based opto-electronics integration slice following development side One of to.Ge-on-Si laser is another extensive single chip integrated competitive solution, because it is completely simultaneous Complementary metal oxide semiconductor field effect transistor (CMOS) technology of appearance, can substantially reduce process complexity, cost and when Between.Prediction germanium luminescent device in 2007, will study from tensile strain and highly doped level.
Ge material is since adjustable characteristic becomes silicon based opto-electronics in very large range for its quasi- direct band gap characteristic and energy band Integrated research hot topic.The energy band engineering of Ge initially proposes by MIT group, they think that the energy difference between Γ and L point can be with Reduced by introducing tensile strain, and the injection electronics from the highly doped area n can be sufficient filling with Γ energy valley and promote radiation Occur.First optical pumping germanium laser was realized for the first time in 2010, illustrated electric pump germanium laser within 2012 and 2015.Its The Ge laser of his type, such as GeSn laser, Ge QD laser has been studied recently, these all show Ge as Si The potentiality of laser material.But its threshold current density is up to 280kA/cm2, larger with deviation from the desired value；On the other hand, with silicon The Germanium semiconductor material for belonging to IV race is used to produce first transistor in the world, because silicon source storage is abundant and good Silicon oxide surface passivation, silicon semiconductor become current large scale integrated circuit leading role.Due to germanium, extension is raw on silicon recently The raising of long technology, Germanium semiconductor material have become a hot topic of research again, and Ge material is especially used to prepare laser as piece Upper light source is even more the forward position studied.
The Jurgen Michel of Cambridge University in 2012 et al. have studied high n-type doping Si/Ge/n+- Ge electric pump Laser, the super 1mw of output power, the nearly 200nm of gain spectrum width；The Jifeng of Sai Ye engineering college of Dartmouth College in 2012 Liu et al. people devises a kind of laser of Si/Ge/Si structure, and output wavelength range is 1530-1650nm, and output power is 1mW；Yan Cai in 2013 et al. devises double heterojunction Ge laser, has reached 1520-1700 nanometers of wide laser spectrums, Threshold current density is estimated as 0.53kA/cm simultaneously2, material gain can achieve 1000cm-1；JIALIN JIANG in 2017 Et al. devise a kind of Ge/SiGe quantum-well laser, since Carrier Injection Efficiency is low and 4% is uniaxially stretched threshold under stress It is worth current density and is higher than 1 × 104kA/cm2, do not have preferable performance；Jiaxin Ke in 2017 et al. devise strain Si/ Ge/Si, in carrier lifetime (τ p, n)=1ns, efficiency etawp=34.8% and threshold current density be Jth=27kA/cm2。
To sum up, technical problem of the existing technology includes:
1., since Ge material is direct band gap material, luminous efficiency is simultaneously for the semiconductor laser using Ge material It is not high, while its threshold current density is also larger, is affected for the performance of semiconductor laser；
2. pair Ge base laser uses Fabry-Perot resonant cavity, since its wavelength is larger, the coating layers of high-reflecting film Also more, technology difficulty is big, and is easy to fall off.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of Ge/GeSn heterolasers And preparation method thereof.The technical problem to be solved in the present invention is achieved through the following technical solutions:
The embodiment of the invention provides a kind of preparation methods of Ge/GeSn heterolaser, comprising the following steps:
(1) the first Bragg reflection mirror layer is formed on the surface of substrate；
(2) Ge layers of the first N-shaped is formed on the surface of the first Bragg reflection mirror layer；
(3) Ge layers of the second N-shaped is formed on Ge layers of first N-shaped of surface；
(4) GeSn layers are formed on Ge layers of second N-shaped of surface；
(5) Ge layers of the first p-type is formed on GeSn layers of the surface；
(6) Ge layers of the second p-type is formed on Ge layers of first p-type of surface；
(7) the second Bragg reflection mirror layer is formed on Ge layers of second p-type of surface；
(8) the second Bragg reflection mirror layer, Ge layers of second p-type, the first p-type Ge of first area are etched Layer, GeSn layers described, Ge layers of second N-shaped and Ge layers of formation first step of first N-shaped；Etch the described of second area Second Bragg reflection mirror layer forms second step；
(9) electrode is formed in the first step and the second step.
In one embodiment of the invention, step (1) includes:
Using plasma enhances chemical vapour deposition technique, on a si substrate alternating growth Si film layer and SiO2Film layer To form the first Bragg reflection mirror layer.3. preparation method according to claim 2, which is characterized in that step (2) Include:
Using high vacuum chemical vapor deposition method, under 330~380 DEG C of growth temperatures, in the first Si/SiO2It is thin Described Ge layers of first N-shaped of the surface growth of film layer.
In one embodiment of the invention, step (3) includes:
Using high vacuum chemical vapor deposition method, under 200~280 DEG C of growth temperatures, at Ge layers of first N-shaped Described Ge layers of second N-shaped of surface growth, and the doping concentration of Ge layers of second N-shaped is less than the doping of Ge layers of first N-shaped Concentration.
In one embodiment of the invention, step (4) includes:
Using molecular beam epitaxy, under 80~95 DEG C of growth temperatures, GeSn is grown on Ge layers of second N-shaped of surfaces Layer, the mass component of Sn is 11-20% in the GeSn.
In one embodiment of the invention, step (5) includes:
Using high vacuum chemical vapor deposition method, under 200~280 DEG C of growth temperatures, on GeSn layers of the surface Grow Ge layers of first p-type.
In one embodiment of the invention, step (6) includes:
Using high vacuum chemical vapor deposition method, under 330~380 DEG C of growth temperatures, at Ge layers of first p-type Described Ge layers of second p-type of surface growth, the doping that the doping concentration of Ge layers of second p-type is greater than Ge layers of first p-type are dense Degree.
In one embodiment of the invention, step (7) includes:
Using plasma enhance chemical vapour deposition technique, Ge layer of second p-type surfaces alternating Si film layers with SiO2Film layer is to form the second Bragg reflection mirror layer.
In one embodiment of the invention, step (8) includes:
In the 2nd Si/SiO2The surface of film layer determines patterned area with the first round exposure mask, using inductance coupling Plasma/reactive ion etching method of conjunction etches the second Bragg reflection mirror layer, Ge layers of second p-type, institute Ge layers of the first p-type, GeSn layers described, Ge layers of second N-shaped and Ge layers of formation first step of first N-shaped are stated, are then carved First round exposure mask described in eating away；
In the 2nd Si/SiO of first cylinder2The surface of film layer determines patterned area with the second round exposure mask, Using plasma/reactive ion etching method of inductive coupling by the 2nd Si/SiO2Film layer etches to form second Step.
The embodiment of the invention also provides a kind of Ge/GeSn heterolaser, the Ge/GeSn heterolaser Structure is from bottom to top successively are as follows: substrate, the first Bragg reflection mirror layer, Ge layers of the first N-shaped, Ge layers of the second N-shaped, GeSn layers, One Ge layers of p-type, Ge layers of the second p-type, the second Bragg reflection mirror layer；The Ge/GeSn heterolaser is by above-mentioned preparation side Method is prepared.
Compared with prior art, beneficial effects of the present invention:
1. improving efficiency: structure of the invention uses GeSn material and P-I-N structure, with traditional heavy doping Ge material Laser structure is compared, and efficiency is improved；
2. reducing threshold current density: structure GeSn material ratio Ge material of the invention shines closer to direct band gap Internal quantum efficiency it is higher；And shone using the more preferable limiting carrier of P-I-N structure energy in the area I, improve the restriction factor；Current-carrying Son shines in the area I mostly, and the area I undopes, and non-radiative recombination reduces, and loss factor also reduces, and above variation all reduces Threshold current density；
3. simple process: preparation method of the invention does not need to do the techniques such as side cleavage plated film, simple process；
4. suitable monolithic optoelectronic integration: structure of the invention can be mutually compatible with CMOS technology, is suitble to monolithic optoelectronic integration.
Detailed description of the invention
Fig. 1 is the schematic cross-section of Ge/GeSn heterolaser of the present invention；
Fig. 2 is the schematic top plan view of Ge/GeSn heterolaser of the present invention；
Fig. 3 is the preparation method flow diagram of Ge/GeSn heterolaser of the present invention；
Fig. 4 (a)-Fig. 4 (h) is the preparation method schematic diagram of Ge/GeSn heterolaser provided in an embodiment of the present invention.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to This.
Embodiment 1:
Not high in order to solve traditional Ge base laser luminous efficiency, threshold current density is larger, preparation process difficulty Big problem present embodiments provides a kind of preparation method of Ge/GeSn heterolaser and the Ge/GeSn of this method preparation Heterolaser.
Referring to Figure 1 and Fig. 2, Fig. 1 are the schematic cross-section of Ge/GeSn heterolaser of the present invention, and Fig. 2 is the present invention The schematic top plan view of Ge/GeSn heterolaser.Ge/GeSn heterolaser structure of the invention is from bottom to top successively Are as follows: substrate 1, the first Bragg reflection mirror layer 2, the first N-shaped Ge layer 3, the second N-shaped Ge layer 4, GeSn layer 5, the first p-type Ge layer 6, Second p-type Ge layer 7, the second Bragg reflection mirror layer 8；Second Bragg reflection mirror layer 8 is cylindricality, the first N-shaped Ge layer 3, the 2nd n Type Ge layer 4, GeSn layer 5, the first p-type Ge layer 6, the second p-type Ge layer 7 are also cylindricality, and the cylindrical diameter is greater than the second Bradley The cylindrical diameter that lattice mirror layer 8 is formed, and less than the diameter of the first Bragg reflection mirror layer.
The preferred silicon substrate 1 of substrate 1 of Ge/GeSn heterolaser of the invention, the silicon substrate 1 are on insulator Silicon materials or body silicon materials substrate 1.
Bragg reflection mirror layer is Si/SiO2Film layer is by Si and SiO2The period knot rearranged to lower and upper alternating Structure, and in each group of periodic structure, Si is under, SiO2Upper.It is made of with being alternately arranged two kinds of biggish materials of refractive index The distributed bragg reflector mirror (DBR) that periodic structure is formed is a part of optical microcavity.Traditional FB is replaced with dbr structure Resonant cavity makes that the processing is simple, the monochromaticjty of laser is more preferable.
First N-shaped Ge layer 3, the second N-shaped Ge layer 4, GeSn layer 5, in Ge/GeSn heterolaser structure of the invention One p-type Ge layer 6 and the second p-type Ge layer 7 form P-I-N structure, and the present invention is using the more preferable limiting carrier of P-I-N structure energy in I Area shines, and improves the restriction factor；Carrier shines in the area I mostly, and the area I undopes, and non-radiative recombination reduces, loss factor It reduces, above variation all reduces threshold current density；And compared with traditional heavy doping Ge material laser device structure, mention High efficiency.
Ge/GeSn heterolaser structure of the invention replaces traditional single Ge material using GeSn material, passes through Adjustment Sn component changes stress intensity to realize demand of the germanium tin light source to different wavelengths of light, and photoelectric conversion with higher is imitated Rate, photostability.
Fig. 3 is referred to, Fig. 3 is the preparation method flow diagram of Ge/GeSn heterolaser of the present invention.This method packet Include following steps:
(1) the first Bragg reflection mirror layer 2 is formed on the surface of substrate 1；
(2) the first N-shaped Ge layer 3 is formed on the surface of the first Bragg reflection mirror layer 2；
(3) the second N-shaped Ge layer 4 is formed on the surface of the first N-shaped Ge layer 3；
(4) GeSn layer 5 is formed on the surface of the second N-shaped Ge layer 4；
(5) the first p-type Ge layer 6 is formed on the surface of GeSn layer 5；
(6) the second p-type Ge layer 7 is formed on the surface of the first p-type Ge layer 6；
(7) the second Bragg reflection mirror layer 8 is formed on the surface of the second p-type Ge layer 7；
(8) the second Bragg reflection mirror layer of first area, Ge layers of the second p-type, Ge layers of the first p-type, GeSn layers, the are etched Ge layers of formation first step of two Ge layers of N-shapeds and the first N-shaped；The the second Bragg reflection mirror layer for etching second area forms second Rank；
(9) electrode is formed in first step and second step.
First area refers to the second Bragg reflection mirror layer, Ge layers of the second p-type, Ge layers of the first p-type, GeSn layers, the second N-shaped Ge layers and Ge layers of the first N-shaped are formed by region；Second area refers to the region that the second Bragg reflection mirror layer is formed.
For step (1), can use method particularly includes:
Using plasma enhances one Si/SiO of chemical vapour deposition technique growth regulation on a si substrate2Film layer；First Si/ SiO2Film layer is by Si and SiO2The periodic structure rearranged to lower and upper alternating.
For step (2), can use method particularly includes:
In the first Si/SiO2The surface of film layer is using high vacuum chemical vapor deposition method in 330~380 DEG C of growth temperature Spend lower one N-shaped Ge layer 3 of growth regulation.
For step (3), can use method particularly includes:
Use high vacuum chemical vapor deposition method under 200~280 DEG C of growth temperatures on the surface of the first N-shaped Ge layer 3 Two N-shaped Ge layer 4 of growth regulation, and the doping concentration of the second N-shaped Ge layer 4 is less than the doping concentration of the first N-shaped Ge layer 3.
For step (4), can use method particularly includes:
GeSn layer 5 is grown under 80~95 DEG C of growth temperatures using molecular beam epitaxy on the surface of the second N-shaped Ge layer 4, The mass component of Sn is 11~20% in GeSn.
For step (5), can use method particularly includes:
High vacuum chemical vapor deposition method growth regulation under 200~280 DEG C of growth temperatures is used on the surface of GeSn layer 5 One p-type Ge layer 6.
For step (6), can use method particularly includes:
Use high vacuum chemical vapor deposition method under 330~380 DEG C of growth temperatures on the surface of the first p-type Ge layer 6 Two p-type Ge layer 7 of growth regulation, the doping concentration of the second p-type Ge layer 7 are greater than the doping concentration of the first p-type Ge layer 6.
For step (7), can use method particularly includes:
Enhance two Si/SiO of chemical vapour deposition technique growth regulation in the surface using plasma of the second p-type Ge layer 72Film Layer；
2nd Si/SiO2Film layer is by Si and SiO2The periodic structure rearranged to lower and upper alternating.
For step (8), can use method particularly includes:
In the 2nd Si/SiO2The surface of film layer determines patterned area with the first round exposure mask, using inductance coupling Plasma/reactive ion etching method of conjunction etches the second Bragg reflection mirror layer, Ge layers of second p-type, institute Ge layers of the first p-type, GeSn layers described, Ge layers of second N-shaped and Ge layers of formation first step of first N-shaped are stated, are then carved First round exposure mask described in eating away；
In the 2nd Si/SiO of first cylinder2The surface of film layer determines patterned area with the second round exposure mask, Using plasma/reactive ion etching method of inductive coupling by the 2nd Si/SiO2Film layer etches to form second Step.
The embodiment of the present invention replaces traditional single Ge material by using GeSn material, by adjusting the change of Sn component Stress intensity is to realize demand of the germanium tin light source to different wavelengths of light, and photoelectric conversion efficiency with higher, photostability；It is logical It crosses and is shone using the more preferable limiting carrier of P-I-N structure energy in the area I, improve the restriction factor；Carrier shines in the area I mostly, I Area undopes, and non-radiative recombination reduces, and loss factor also reduces, and reduces threshold current density；In addition, the system of the present embodiment Preparation Method does not need to do the techniques such as side cleavage plated film, simple process.
Embodiment 2:
Refer to 4 (a)~Fig. 4 (h) and Fig. 1, the present embodiment on the basis of the above embodiments, to Ge/ of the invention The preparation method of GeSn heterolaser and the Ge/GeSn heterolaser of preparation are described in detail as follows:
Step (1), refers to Fig. 4 (a), and selecting silicon materials or body silicon materials on insulator is substrate, and usual substrate 1 selects Rectangle is selected, using plasma enhances one Si/SiO of chemical vapour deposition technique (PECVD) growth regulation2Film layer.
By computer control mass flowmenter switch, make to react indoor reaction gas alternately in SiH4(+Ar) and O2Between Exchange, to make to decompose SiH4Depositing polysilicon film and the layer-by-layer plasma oxidation of pure oxygen are alternately.
1 temperature of substrate is maintained at 250 DEG C, Si and SiO2Thickness be respectively 143nm and 233nm, and Si is under, SiO2? On, the distributed bragg reflector mirror (DBR) being consequently formed is a part of optical microcavity, is by two kinds of biggish materials of refractive index For material to be alternately arranged the periodic structure formed, the optical thickness of every layer material is the 1/4 of center reflection wavelength.
It should be noted that the first Si/SiO2Si/SiO in film layer2Can have it is multipair, in the present embodiment with 12 pairs illustrate Explanation.
Step (2), refers to Fig. 4 (b), in 12 couples of Si/SiO of step (1) preparation2The surface of film layer low temperature superelevation Vacuum chemical vapor deposition method (UHV-CVD) grows the first highly doped N-shaped Ge layer 3.Growth temperature is 330~380 DEG C, growth With a thickness of 200~230nm, doping concentration is 1 × 1018~5 × 1018cm-3。
The effect that the first highly doped N-shaped Ge layer 3 had both acted as buffer layer reduces the influence of the lattice mismatch from DBR, A large amount of injection electronics can be provided again.
Step (3), refers to Fig. 4 (c), in the surface low temperature ultrahigh vacuum of the first N-shaped Ge layer 3 of step (2) preparation Chemical vapor deposition method (UHV-CVD) grows the second low-doped N-shaped Ge layer 4.Growth temperature is 200~280 DEG C, growth thickness For 200~220nm, doping concentration is 5 × 1017~9 × 1017cm-3.The doping concentration of second N-shaped Ge layer 4 is slightly below the first N-shaped The doping concentration of Ge layer 3, the purpose is to reduce the light loss of auger recombination generation.
N area of the second low-doped N-shaped Ge floor 4 as laser P-I-N structure provides a large amount of injection electronics.
Step (4), refers to Fig. 4 (d), uses low temperature molecular beam in the surface of the second N-shaped Ge layer 4 of step (3) preparation Epitaxy (MBE) grows GeSn layer 5.Growth temperature is 80~95 DEG C, GeSn layer 5 with a thickness of 140~160nm, Sn in GeSn Mass component be 11-20%, the group for obtaining GeSn layer 5 is divided into Ge0.84Sn0.16。
Use low temperature MBE technology growth GeSn layer 5 as active layer, it is in order to ensure GeSn alloy that Sn group, which is divided into 11-12%, Direct band gap material is had been converted to, meanwhile, it is the segregation of Sn in order to prevent using ultralow temperature growth technique.
Step (5), refers to Fig. 4 (e), is formed sediment in the surface of the GeSn of step (4) preparation using high vacuum chemical vapour phase Area method (UHV-CVD) grows the first low-doped p-type Ge layer 6.Growth temperature be 200~280 DEG C, growth thickness be 200~ 220nm, doping concentration are 5 × 1018~2 × 1019cm-3。
It is provided big with low-doped Ge layers of p-type of low temperature UHV-CVD technology growth as the area P of laser P-I-N structure The injection electronics of amount.Its doping concentration is slightly below the doping concentration of the Ge material of step 6), to reduce auger recombination generation Light loss.In view of the mobility in hole is lower than the mobility of electronics, its doping concentration is higher than mixing for the Ge material of step 3) Miscellaneous concentration.
Step (6), refers to Fig. 4 (f), uses ultrahigh vacuum in the surface of the first p-type Ge layer 6 of step (5) preparation Chemical vapor deposition method (UHV-CVD) grows the second highly doped p-type Ge layer 7.Growth temperature is 330~380 DEG C, and growth thickness is 200~230nm, doping concentration are 8 × 1018~5 × 1019cm-3。
It is slightly above mixing for the first highly doped p-type Ge layer 6 of step (5) with low temperature UHV-CVD technology growth doping concentration Miscellaneous concentration, it also acts as buffer layer, can reduce the influence of the lattice mismatch from DBR, and can provide a large amount of injection hole.
Step (7), refers to Fig. 4 (g), increases in the surface using plasma of the second p-type Ge layer 7 of step (6) preparation Extensive chemical vapour deposition process (PECVD) grows the 2nd Si/SiO2Film layer.
Si/SiO2Distributed bragg reflector mirror (DBRs) is all the one of optical resonator as the DBR of step (1) Part.
It should be noted that the 2nd Si/SiO2Si/SiO in film layer2There can be multipair, the first Si/SiO2Film layer, Two Si/SiO2Film layer Si/SiO2Logarithm can according to generate laser actual conditions be adaptively adjusted.In the present embodiment Two Si/SiO2Si/SiO in film layer2It is illustrated with 6 Duis.
Step (8), refers to Fig. 4 (h), and photoetching process is utilized in the structure of step (6) preparation, and generating radius is 6 μm Round silicon nitride film, make protection figure exposure mask, etch first step, then, etch away silicon nitride mask, make second Si/SiO2Film layer to the described first Ge layers of etching form the first cylinder.
Then referring to Figure 1, in the structure of Fig. 4 (h), then with photoetching process, in the 2nd Si/SiO2The surface of film layer The silicon nitride film that radius is 3 μm is generated, second step is etched；Finally, etching away silicon nitride mask, make the 2nd Si/SiO2 Film layer forms the second cylindrical body.On two steps etched, contact electrode can be done respectively, completes the preparation of device.The The diameter of one cylindrical body is less than the first Si/SiO2The diameter of film layer, and it is greater than the diameter of second cylinder.
Wherein, silicon nitride film is to be grown under the conditions of low pressure, 700 DEG C using LPCVD (Low Pressure Chemical Vapor Deposition) 's；The formula of etching agent used in ion etching be potassium hydroxide: isopropanol: water=1:2:2,80 DEG C of etching temperature；Etch nitride Silicon can under the conditions of 180 DEG C hydrofluoric acid and phosphoric acid mixed liquor.
Step (9) forms electrode on the first step and second step for the structure that step (8) obtains.
In embodiments of the present invention, P-I-N structure is made of Ge/GeSn/Ge.P-I-N structure can effectively limit load In the area I and since the area I undopes, can effectively degrade stream non-radiative recombination and photonic absorption, improve the current-carrying of material Son injection and luminous efficiency, are advantageously implemented High Efficiency Luminescence.
In embodiments of the present invention, the distribution that upper distribution Bragg reflector is alternately made of 6 pairs of Si/SiO2 materials Bragg mirror, the Distributed Bragg Reflection that lower distribution Bragg reflector is alternately made of 12 pairs of Si/SiO2 materials Mirror, the optical thickness of every layer material is the 1/4 of center reflection wavelength, since the electromagnetic wave that frequency is fallen within the scope of energy gap can not be worn Thoroughly, the reflectivity of Bragg mirror is up to 99% or more.Meanwhile the structure does not have the absorption problem of metallic mirror, and can To adjust energy gap position by the refractive index for changing material or thickness.
In embodiments of the present invention, the etching depth of cylindrical mesa is up to lower distribution Bragg reflector upper end, and does not have Have by the first Ge layers etch away completely；The height of cylindrical mesa is 2.256 μm, and the radius of cylindrical mesa is 3 μm.
Ge/GeSn P-I-N laser device provided by the invention and preparation method thereof can either CMOS technique compatible, again Stress intensity can be changed by adjusting Sn component to realize demand of the germanium tin light source to different wavelengths of light, and light with higher Photoelectric transformation efficiency, photostability.The FB resonant cavity of traditional Ge base laser DBR is replaced so that the processing is simple, laser simultaneously Monochromaticjty it is more preferable, for realize on piece light source one specific structure and embodiment are provided.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention Protection scope.

Claims (10)

1. a kind of preparation method of Ge/GeSn heterolaser, which comprises the following steps:
(1) the first Bragg reflection mirror layer is formed on the surface of substrate；
(2) Ge layers of the first N-shaped is formed on the surface of the first Bragg reflection mirror layer；
(3) Ge layers of the second N-shaped is formed on Ge layers of first N-shaped of surface；
(4) GeSn layers are formed on Ge layers of second N-shaped of surface；
(5) Ge layers of the first p-type is formed on GeSn layers of the surface；
(6) Ge layers of the second p-type is formed on Ge layers of first p-type of surface；
(7) the second Bragg reflection mirror layer is formed on Ge layers of second p-type of surface；
(8) etch the second Bragg reflection mirror layer of first area, Ge layers of second p-type, Ge layers of first p-type, Ge layers of formation first step of Ge layers of GeSn layers described, described second N-shaped and first N-shaped；Etch described the of second area Two Bragg reflection mirror layer form second step；
(9) electrode is formed in the first step and the second step.
2. preparation method according to claim 1, which is characterized in that step (1) includes:
Using plasma enhances chemical vapour deposition technique, on a si substrate alternating growth Si film layer and SiO2Film layer is with shape At the first Bragg reflection mirror layer.
3. preparation method according to claim 2, which is characterized in that step (2) includes:
Using high vacuum chemical vapor deposition method, under 330~380 DEG C of growth temperatures, in the first Si/SiO2Film layer Surface growth it is described Ge layers of first N-shaped.
4. preparation method according to claim 3, which is characterized in that step (3) includes:
Using high vacuum chemical vapor deposition method, under 200~280 DEG C of growth temperatures, on Ge layers of surface of first N-shaped Ge layers of second N-shaped is grown, and the doping concentration of Ge layers of second N-shaped is less than the doping concentration of Ge layers of first N-shaped.
5. preparation method according to claim 1, which is characterized in that step (4) includes:
Using molecular beam epitaxy, under 80~95 DEG C of growth temperatures, GeSn layers are grown on Ge layers of second N-shaped of surfaces, The mass component of Sn is 11-20% in the GeSn.
6. preparation method according to claim 1, which is characterized in that step (5) includes:
Using high vacuum chemical vapor deposition method, under 200~280 DEG C of growth temperatures, grown on GeSn layers of the surface Ge layers of first p-type.
7. preparation method according to claim 1, which is characterized in that step (6) includes:
Using high vacuum chemical vapor deposition method, under 330~380 DEG C of growth temperatures, on Ge layers of surface of first p-type Ge layers of second p-type is grown, the doping concentration of Ge layers of second p-type is greater than the doping concentration of Ge layers of first p-type.
8. preparation method according to claim 1, which is characterized in that step (7) includes:
Using plasma enhances chemical vapour deposition technique, replaces Si film layer and SiO on Ge layers of second p-type of surfaces2It is thin Film layer is to form the second Bragg reflection mirror layer.
9. preparation method according to claim 8, which is characterized in that step (8) includes:
In the 2nd Si/SiO2The surface of film layer determines patterned area with the first round exposure mask, using inductive coupling etc. Gas ions/reactive ion etching method etches the second Bragg reflection mirror layer, Ge layers of second p-type, the first p Ge layers of type, GeSn layers described, Ge layers of second N-shaped and Ge layers of formation first step of first N-shaped；
In the 2nd Si/SiO of first cylinder2The surface of film layer determines patterned area with the second round exposure mask, using electricity Plasma/reactive ion etching method of coupling is felt by the 2nd Si/SiO2Film layer etches to form second step.
10. a kind of Ge/GeSn heterolaser, which is characterized in that the structure of the Ge/GeSn heterolaser from lower and On successively are as follows: substrate, the first Bragg reflection mirror layer, Ge layers of the first N-shaped, Ge layers of the second N-shaped, GeSn layers, Ge layers of the first p-type, Second Ge layers of p-type, the second Bragg reflection mirror layer；The Ge/GeSn heterolaser is by any one of claim 1~9 institute The preparation method stated is prepared.
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