CN107026390A - A kind of 1.55 micron wave length GaAs base micro-cavity laser preparation methods and device - Google Patents
A kind of 1.55 micron wave length GaAs base micro-cavity laser preparation methods and device Download PDFInfo
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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Abstract
The present invention provides a kind of 1.55 micron wave length GaAs base micro-cavity laser preparation methods and device, the described method comprises the following steps：S1, monocrystalline GaAs substrates side successively epitaxial growth buffer, limiting layer, lower waveguide layer, multi-quantum well active region, on ducting layer and ohmic contact layer；S2, the making graphic mask layer on ohmic contact layer, and with graphic mask layer for mask fabrication microcavity；S3, in microcavity surface cvd nitride silicon thin film, and make on microcavity lateral dielectric limiting layer, silicon dioxide insulating layer made in microcavity top layer；S4, p-electrode is made on silicon dioxide insulating layer, n-electrode is made in GaAs substrates opposite side.By epitaxial growth InP materials on gaas substrates, the luminescence band of 5 microns of GaAs based 1.5s is realized, and using the structure of micro-cavity laser, the advantage such as possess high-quality-factor, low threshold current, be easy to integrated, preparation technology simple.
Description
Technical field
It is micro- more particularly, to a kind of 1.55 micron wave length GaAs bases the present invention relates to semiconductor laser field
Cavity laser preparation method and device.
Background technology
GaAs and InP are mesh first two development the most ripe group Ⅲ-Ⅴ compound semiconductor materials, wherein InP by
It is widely used in fiber optic communication long wavelength (such as 1310nm and 1550nm wave bands) opto-electronic device.However, for GaAs,
InP materials are more crisp in itself, are difficult to prepare large-sized substrate again, the price of its unit area is high, and substrate crystal quality is also not so good as
GaAs materials.Simultaneously for GaAs substrates, be generally adapted preparation optic communication short wavelength (850nm) opto-electronic device and some
High-velocity electrons component.Therefore, integrated InP opto-electronic devices on gaas substrates, can make full use of the advantage of GaAs substrates
With the advantage of InP devices, reduction material and device cost break through the bottleneck of current GaAs bases long wavelength light electrical part.Meanwhile,
InP materials with device to silicon (Si) basis set into important transition.
Due to there is up to 3.8% lattice mismatch between InP and GaAs, direct growth InP materials on gaas substrates,
The critical thickness of epitaxial layer is only 5nm.After more than critical thickness, highdensity dislocation and other defect will be produced, so that
Cause device performance degeneration and failure, it is difficult to applied in actual production.
At present, four kinds of approach mainly realize 1550nm wavelength GaAs base lasers.The first approach is InP/GaAs keys
Conjunction technology：By the InGaAsP laser epitaxials material grown in InP substrate and the GaAs/AlGaAs cloth of GaAs Growns
Glug speculum, is bonded together by wafer bonding techniques.The threshold current of this device is very low, but makes in this way
The device yield of work is very low, it is difficult to realize large-scale production.Second of approach is that growth GaInNAsSb is mono- on gaas substrates
Quantum-well laser material.By mixing Sb elements in active area, its band gap is set to narrow, emission wavelength can reach 1550nm.
But, active area materials include five kinds of elements of Ga, In, N, As and Sb, and the component of wherein Sb elements is difficult to control to, ultimately resulted in sharp
The wavelength of light device is difficult to accurate control.The third approach is to be used as active area materials by the use of InAs/InGaAs quantum-dot structures.
, Karachinsky of Russian Ioffe Physico-Technical research institutes et al., using molecular beam epitaxy in 2006
(Molecular Beam Epitaxy, MBE) technology, grows using InAs/InGaAs quantum dots as active area on gaas substrates
Laser material (1.5 μm of L Ya Karachinsky, T Kettler, I I Novikov, et al.Metamorphic-
range quantum dot lasers on a GaAs substrate[J].Semiconductor science and
technology,2006,(5):691).The laser realizes continuous-wave lasing at 10 DEG C, and threshold current density is about 3kA/
cm2.Because threshold current density is too high, wavelength can not adjust 1550nm, it is difficult to reach industrialized requirement.4th kind of approach be
Active area is used as using the InGaAs/GaAs quantum well structures of mutation., Cha Ermusi Polytechnics of Sweden in 2007Et al., using MBE equipment by mutation epitaxial growth method, realize 1.58 μm of GaAs base lasers of wavelength.
At room temperature, the laser threshold current density is 490A/cm2, it is still higher, and use MBE preparation methods, it is difficult to realize
Industrialization.
Traditional F-P cavity type laser, echo wall die can be substituted by the micro-cavity laser with Whispering-gallery-mode at present
The chamber that declines has high index-contrast on its interface, and occurring continuous total reflection on microcavity interface using light beam forms closure light time
Road, optical mode is limited in inside microcavity, to form the Whispering-gallery-mode of high-quality-factor.Common Whispering-gallery-mode microcavity has
Microballoon, micro- disk, micro-loop and regular polygon, possess low threshold current, small volume, preparation technology it is simple and can integrated level height etc. it is excellent
Point, has huge potentiality in integreted phontonics and optical interconnection application.At present, several seminar grind in micro-cavity laser both at home and abroad
Greater advance is achieved in studying carefully.1998, Japanese Yokohama national university M.Fujita et al. reported a diameter of 3 microns
The micro- disk lasers of InGaAsP/InP, improve processing technology so that side is more smooth, realizes room temperature continuous-wave lasing, its
The mode quality factor is 3300, and Spontaneous Emission Factor reaches 10-3.2011, Harvard University Y.Zhang et al. utilized the micro- dish types of WG
Microcavity and photonic crystal are combined, and are prepared for the photonic crystal microdisk laser of room temperature optical pumping lasing.But, above 1550nm ripples
Long micro-cavity laser, is realized in InP substrate.
The content of the invention
The present invention provides a kind of 1.55 micron wave lengths for overcoming above mentioned problem or solving the above problems at least in part
GaAs base micro-cavity laser preparation methods and device, by epitaxial growth InP materials on gaas substrates, realize GaAs based 1.5s 5
The luminescence band of micron, and using the structure of micro-cavity laser, possess high-quality-factor, low threshold current, be easy to integrated and system
The advantage such as standby technique is simple.
According to an aspect of the present invention there is provided a kind of micro-cavity laser preparation method, comprise the following steps：
S1, in monocrystalline GaAs substrates side, epitaxial growth buffer, limiting layer, lower waveguide layer, MQW are active successively
Area, upper ducting layer and ohmic contact layer；
S2, the making graphic mask layer on ohmic contact layer, and with graphic mask layer for mask fabrication microcavity；
S3, microcavity surface deposit SiNxFilm, and lateral dielectric limiting layer is made on microcavity, made in microcavity top layer
SiO2Insulating barrier；
S4, in SiO2P-electrode is made on insulating barrier, n-electrode is made in GaAs substrates opposite side.
As preferred, in step sl, the GaAs substrates are n-type GaAs substrates.
As preferred, in step sl, n-type GaAs high temperature buffer layers, the InP that the cushion includes stacking gradually are low
Warm cushion, n-type InP high temperature buffer layers.
As preferred, the step S1 is specifically included：
S11, by MOCVD methods, at a temperature of 720 DEG C, n-type Si doping GaAs cushions thick growth 300nm；
S12,450 DEG C are reduced the temperature to, pass through MOCVD methods, InP low temperature buffer layers thick growth 15nm；
S13, temperature is adjusted to 655 DEG C, grown successively on InP low temperature buffer layers by MOCVD methods 1300nm~
The InP high temperature buffer layers of n-type Si doping thick 1500nm, it is mixed in hydrogen and phosphine after the InP high temperature buffer layers growth terminates
Close and in-situ heat cycle annealing is carried out in atmosphere；
S14, temperature is adjusted to 655 DEG C, grown successively on InP high temperature buffer layers by MOCVD methods 300nm~
InP limiting layers, the 80nm~100nm of n-type Si doping thick 500nm thick InGaAsP lower waveguide layers, multi-quantum well active region,
The thick p-type doping InP limiting layers of ducting layer, 1300nm~1500nm and 150nm~300nm on InGaAsP thick 80nm~100nm
The InGaAs ohmic contact layers of thick p-type heavy doping.
As preferred, in the step S14, the multi-quantum well active region includes 5 layers of 5nm InGaAs well layer and 6
Layer 10nm InGaAsP barrier layer, the well layer and barrier layer are alternately laminated, and the first layer barrier layer is grown on ripple under n-type InGaAsP
On conducting shell.
As preferred, the step S2 is specifically included：SiO is grown on ohmic contact layer by PECVD methods2It is thin
Film, and utilize ICP lithographic methods etching SiO2Film, by mask of photoresist by the cavity pattern transfer on photoresist to SiO2
On film, SiO is made2Graphic mask layer；With SiO2Graphic mask layer is mask, with ICP lithographic methods by SiO2Chamber on film
Volume graphic is transferred on GaAs epitaxial wafers, etches the microcavity of Whispering-gallery-mode, and the SiO that top layer is remained2Remove.
As preferred, the step S3 is specifically included：
S31, the thick SiN of one layer of 200nm deposited on the microcavity surface by PECVD methodsxFilm；
S32, use sol evenning machine with 4000rpm~5000rpm rotating speeds in two times in SiNxBCB spin coatings are carried out on film, are led to
RIE methods are crossed to remove the BCB films at the top of microcavity；
S33, using PECVD methods, in the thick SiO of one layer of 400nm of microcavity top layer deposition2Insulating barrier.
Epitaxial growth has buffering successively on a kind of micro-cavity laser, including monocrystalline GaAs substrates, the GaAs substrates side
Layer, n-type doping InP limiting layers, InGaAsP lower waveguide layers, multi-quantum well active region, upper ducting layer, p-type doping InP limiting layers
With p-type ohmic contact layer；The multi-quantum well active region includes 5 layers of InGaAs well layer and 6 layers of InGaAsP barrier layer, described
InGaAs well layer and InGaAsP barrier layer are alternately laminated, and the first layer barrier layer is grown on n-type InGaAsP lower waveguide layers；It is described
The micro-cavity structure of Whispering-gallery-mode is etched with GaAs epitaxial wafers.
As preferred, the cushion includes stacking gradually in n-type GaAs high temperature buffer layers, InP on GaAs substrates
Low temperature buffer layer and n-type InP high temperature buffer layers.
As preferred, the microcavity surface deposition has SiNxFilm, the microcavity side also spin coating has dielectric limiting layer,
The microcavity deposited atop has SiO2Insulating barrier, the insulating barrier is provided with p-electrode, and the GaAs substrates opposite side is provided with n
Electrode.
The application proposes a kind of 1.55 micron wave length GaAs base micro-cavity laser preparation methods and device, by being served as a contrast in GaAs
Bottom Epitaxial growth InP materials, realize the luminescence band of 5 microns of GaAs based 1.5s, and using the structure of micro-cavity laser, possess
High-quality-factor, low threshold current, the advantage such as be easy to integrated and preparation technology simple so that the direct epitaxial growth InP of GaAs bases
1.55 mum wavelength laser performances prepared by based material have larger lifting, and cost is minimized.Further, since GaAs substrates
For InP substrate, price is lower, and is more suitable for some high-speed electronic components, therefore, wavelength 1.55 prepared by the method
μm laser is more suitable for that photoelectricity is integrated and industrialization production.
Brief description of the drawings
Fig. 1 is the 1.55 micron wave length GaAs base micro-cavity laser preparation method flow charts according to the embodiment of the present invention；
Fig. 2 is the 1.55 micron wave length GaAs base micro-cavity laser material structure schematic diagrams according to the embodiment of the present invention；
Fig. 3 is to be shown according to a kind of 1.55 square micro-cavity structures of micron wave length GaAs base micro-cavity lasers of the embodiment of the present invention
It is intended to；
Fig. 4 is the 1.55 micron wave length GaAs base micro-cavity lasers longitudinal cross-section schematic diagrames according to the embodiment of the present invention；
Fig. 5 is the most strong optical mode quality factor according to the square microcavity of the embodiment of the present invention with the change of the microcavity length of side
Change curve synoptic diagram；
Fig. 6 is the square microcavity according to 14 μm of the length of side in the embodiment of the present invention, and what is excited near 1550nm wavelength is most strong
The optical field distribution figure of active area cross section under optical mode；
Fig. 7 is the square microcavity according to 14 μm of the length of side in the embodiment of the present invention, and what is excited near 1550nm wavelength is most strong
The distribution map of longitudinal cross-section light field under optical mode.
Embodiment
With reference to the accompanying drawings and examples, the embodiment to the present invention is described in further detail.Implement below
Example is used to illustrate the present invention, but is not limited to the scope of the present invention.
Fig. 1 shows a kind of 1.55 micron wave length GaAs base micro-cavity laser preparation methods, comprises the following steps：
S1, in monocrystalline GaAs substrates side, epitaxial growth buffer, limiting layer, lower waveguide layer, MQW are active successively
Area, upper ducting layer and ohmic contact layer；The crystal face of described monocrystalline GaAs substrates is<100>Crystal face, the crystalline substance of monocrystalline GaAs substrates
Face is without drift angle, and single-sided polishing is n-type doping, and thickness is 375 μm~675 μm；
S2, the making graphic mask layer on ohmic contact layer, and with graphic mask layer for mask fabrication microcavity；
S3, in microcavity surface deposited silicon nitride (SiNx) film, and lateral dielectric limiting layer is made on microcavity, in microcavity
Top layer makes SiO2Insulating barrier；
S4, in SiO2P-electrode is made on insulating barrier, n-electrode is made in GaAs substrates opposite side.Finally it is fabricated to such as Fig. 2
The material structure schematic diagram of shown micro-cavity laser；Fig. 4 is 1.55 micron wave length GaAs bases prepared in the embodiment of the present invention
Square micro-cavity laser longitudinal cross-section structural representation.
As preferred, in step sl, the GaAs substrates are n-type GaAs substrates.
As preferred, in step sl, n-type GaAs high temperature buffer layers, the InP that the cushion includes stacking gradually are low
Warm cushion, n-type InP high temperature buffer layers.
The present embodiment uses Thomas Swan 3 × 2 " low pressure metal organic compound chemical gaseous phase depositions (Low-
Pressure Metal-organic Chemical Vapor Deposition, LP-MOCVD) epitaxial growth system, in metal
Organic chemical vapor deposition (Metal-organic Chemical Vapor Deposition, MOCVD) growth technique process
In, carrier gas is high-purity (99.999%), and III race's organic source is high-purity (99.999%) trimethyl gallium, trimethyl indium and front three
Base aluminium, V clan source is high-purity (99.999%) arsine and phosphine, and n-shaped doped source is silane, and p-type doped source is diethyl zinc,
Chamber pressure is 100Torr, and growth temperature and annealing region are 300 DEG C~700 DEG C.
As preferred, the step S1 is specifically included：
S11, by MOCVD methods, at a temperature of 720 DEG C, n-type Si doping GaAs cushions thick growth 300nm；Doping
Concentration is 2.0 × 1018cm-3, source flux is respectively：Trimethyl gallium 4.1 × 10-5Mol/min, arsine 8.9 × 10-3Mol/min,
Silane 1.2 × 10-6Mol/min, chamber pressure is 100Torr；
S12,450 DEG C are reduced the temperature to, pass through MOCVD methods, InP low temperature buffer layers thick growth 15nm；First pass around
8min, 450 DEG C are cooled to from 720 DEG C, utilize the InP low temperature buffer layers that MOCVD methods growth thickness is 15nm, source flux difference
For：Trimethyl indium 1.6 × 10-5Mol/min, phosphine is 2.2 × 10-2Mol/min, the pressure of reative cell is 100Torr；It is described
The effects of InP low temperature buffer layers be, in one layer of continuous InP thin layer of superficial growth, to prevent under hot conditions large scale three-dimensional island
Shape structure growth, and discharge the big misfit strain energy of InP/GaAs films.
S13, first pass around 7min, 655 DEG C be warming up to from 450 DEG C, by MOCVD methods on InP low temperature buffer layers according to
The InP high temperature buffer layers of n-type Si doping thick secondary growth 1500nm, are eventually adding thermal cycle annealing, and doping concentration is 2.0 ×
1018cm-3, its source flux is：The flow of trimethyl indium is 6.4 × 10-5Mol/min, the flow of phosphine is 6.7 × 10-3mol/
Min, the flow of silane is 1.8 × 10-6Mol/min, chamber pressure is 100Torr；The InP high temperature buffer layers growth terminates
Afterwards, in-situ heat cycle annealing is carried out in hydrogen and phosphine mixed gas atmosphere, specifically, first passing around 2min makes it from growth
Temperature keeps 5min to rising to 700 DEG C, then temperature is dropped to 300 DEG C from 700 DEG C by 7min, and keeps 3min,
Described position repeats said process 3~5 times, completes this thermal cycle annealing, is moved back by inserting thermal cycle in growth course
Fire improves the crystal mass of material；
S14, temperature is adjusted to 655 DEG C, grows the thick n of 500nm successively on InP high temperature buffer layers by MOCVD methods
On InP limiting layers, the 100nm of type Si doping thick InGaAsP lower waveguide layers, multi-quantum well active region, 90nm thick InGaAsP
The thick p-type doping InP limiting layers of ducting layer, 1500nm and the InGaAs ohmic contact layers of the thick p-type heavy doping of 200nm；
Specifically, making n-type InP limiting layers on described InP high temperature buffer layers, it is specially：Using MOCVD methods,
Growth temperature is 655 DEG C, the InP of growing n-type Si doping, and thickness is 500nm, and doping concentration is from 2.0 × 1018cm-3It is reduced to
5.0×1017cm-3, source flux is respectively：The flow of trimethyl indium is from 6.4 × 10-5Mol/min drops to 2.1 × 10-5mol/
Min, the flow of phosphine is 6.7 × 10-3Mol/min, the flow of silane is from 1.8 × 10-6Mol/min is reduced to 1.2 × 10- 9Mol/min, chamber pressure is 100Torr.
Lower waveguide layer is made on described n-type InP limiting layers, is specially：Using MOCVD methods, growth temperature is 655
DEG C, thick InGaAsP (Eg=1.25eV) lower waveguide layers of 100nm are grown, source flux is respectively：The flow of trimethyl indium is 1.6
×10-5Mol/min, the flow of trimethyl gallium is 5.0 × 10-6Mol/min, the flow of arsine is 3.5 × 10-4Mol/min, phosphorus
The flow of alkane is 6.7 × 10-3Mol/min, chamber pressure is 100Torr.
Multi-quantum well active region is made on described lower waveguide layer, the multi-quantum well active region includes 5 layers of 5nm's
InGaAs well layer and 6 layers of 10nm InGaAsP (Eg=1.25eV) barrier layer, the well layer and barrier layer are alternately prepared, first layer barrier layer
Prepare on described n-type InGaAsP lower waveguide layers.Specifically preparation method is：Using MOCVD methods, growth temperature is 655
DEG C, for well layer, source flux is respectively：The flow of trimethyl indium is 1.6 × 10-5Mol/min, the flow of trimethyl gallium is 1.4
×10-5Mol/min, the flow of arsine is 4.5 × 10-3Mol/min, chamber pressure is 100Torr；For barrier layer, source flux
Respectively：The flow of trimethyl indium is 1.6 × 10-5Mol/min, the flow of trimethyl gallium is 5.0 × 10-6Mol/min, arsine
Flow be 3.5 × 10-4Mol/min, the flow of phosphine is 6.7 × 10-3Mol/min, chamber pressure is 100Torr.
Ducting layer on being made in described multi-quantum well active region, be specially：Using MOCVD methods, growth temperature is
655 DEG C, ducting layer on the thick InGaAsP (Eg=1.25eV) of 90nm is grown, source flux is respectively：The flow of trimethyl indium is
1.6×10-5Mol/min, the flow of trimethyl gallium is 5.0 × 10-6Mol/min, the flow of arsine is 3.5 × 10-4Mol/min,
The flow of phosphine is 6.7 × 10-3Mol/min, chamber pressure is 100Torr.
P-type InP limiting layers are made on described upper ducting layer, are specially：Using MOCVD methods, growth temperature is 655
DEG C, the InP of growth p-type doping, thickness is 1500nm, and doping concentration is from 5.0 × 1017cm-3Increase to 1.0 × 1018cm-3, source stream
Amount is respectively：The flow of trimethyl indium is 6.4 × 10-5Mol/min, the flow of phosphine is 6.7 × 10-3Mol/min, diethyl
The flow of zinc is from 4.2 × 10-7Mol/min is increased to 2.5 × 10-5Mol/min, chamber pressure is 100Torr.
P-type ohmic contact layer is made on described p-type InP limiting layers, is specially：Using MOCVD methods, growth temperature
For 530 DEG C, the InGaAs of p-type heavy doping is grown, thickness is 200nm, and doping concentration is 2.0 × 1019cm-3, source flux difference
For：Trimethyl indium flow is 1.6 × 10-5Mol/min, TMGa flow rate is 1.3 × 10-5Mol/min, arsine flow is 2.2
×10-3Mol/min, diethyl zinc flow is 2.5 × 10-5Mol/min, chamber pressure is 100Torr.
As preferred, the step S2 is specifically included：Pass through plasma enhanced chemical vapor deposition (Plasma
Enhanced Chemical Vapor Deposition, PECVD) method grows SiO on ohmic contact layer2Film, and profit
SiO is etched with inductively coupled plasma (Inductively coupled Plasma, ICP) lithographic method2Film, with photoetching
Glue is mask by the cavity pattern transfer on photoresist to SiO2On film, SiO is made2Graphic mask layer；With described SiO2Figure
Shape mask layer is mask fabrication microcavity.
Wherein, the structure of above-mentioned microcavity is as shown in figure 3, it is followed successively by p from top layer+Type InGaAs ohmic contact layers 10, p
The upper ducting layer 8 of type InP limiting layers 9, InGaAsP, multi-quantum well active region 7, InGaAsP lower waveguide layers 6, n-type InP limiting layers 5,
N-type InP high temperature buffer layers 4, InP low temperature buffer layers 3, n-type GaAs high temperature buffer layers 2 and N-type GaAs substrates 1；With SiO2Figure
Mask layer is mask, with ICP lithographic methods by SiO2On cavity pattern transfer to GaAs epitaxial wafers on mask layer, the chamber of etching
Body is square chamber, and the length of side is 10 μm~20 μm, and it is 1 μm~2 μm that side midpoint, which directly exports vertical waveguide width, and etching depth is
3 μm~4 μm, the SiO for finally being remained top layer with the hydrofluoric acid solution of dilution2Remove.By with the microcavity with Whispering-gallery-mode
Laser substitutes traditional F-P cavity type laser.Whispering-gallery-mode microcavity, has high index-contrast on its interface, utilizes light
Continuous total reflection occurs on microcavity interface and forms closure light circuit for beam, optical mode is limited in inside microcavity, to form Gao Pin
The Whispering-gallery-mode of prime factor, the Whispering-gallery-mode microcavity can be circle, micro-loop, regular polygon, possess that threshold current is low, body
The small, preparation technology of product is simple, can integrated level it is high the advantages of, there are huge potentiality in integreted phontonics and optical interconnection application.
In the present embodiment use square micro-cavity structure, Fig. 5 near excitation wavelength 1550nm, square microcavity it is most strong
Optical mode quality factor is with the change curve of the microcavity length of side.Fig. 6 is the square microcavity of 14 μm of the length of side, attached in 1550nm wavelength
The most strong optical mode closely excited, the optical field distribution figure of its active area cross section.Fig. 7 is the square microcavity of 14 μm of the length of side,
The most strong optical mode excited near 1550nm wavelength, the distribution map of its longitudinal cross-section light field.
As preferred, the step S3 is specifically included：
S31, the thick SiN of one layer of 200nm deposited on the microcavity surface by PECVD methodsxFilm, thickness is 200nm；
S32, the material of dielectric limiting layer are benzocyclobutene (Benzocyclobutene, BCB) resin, are existed with sol evenning machine
One layer of spin coating attaches agent on silicon nitride film, in order to obtain preferable limiting layer flatness, with higher rotating speed (4000rpm~
BCB spin coatings 5000rpm) are carried out in two times, after each spin coating, epitaxial wafer are carried out on hot plate to precuring residual in BCB to remove
The solvent stayed.After first time spin coating, epitaxial wafer is positioned over to the softcure that BCB is carried out in the atmosphere of nitrogen；After second of spin coating,
Epitaxial wafer is positioned over to the hard solidification that BCB is carried out in the atmosphere of nitrogen.Finally, using reactive ion etching (Reactive Ion
Etching, RIE) method, the BCB films at the top of microcavity are removed, wherein etching gas are Ar, CF4、O2；
S33, using PECVD methods, in one layer of SiO of microcavity top layer deposition2Insulating barrier, thickness is 400nm.
In the present embodiment, the step S4 is specifically included：In described SiO2P-electrode window is made on insulating barrier；Tool
Body is：After photoetching, using ICP lithographic methods by the SiO in graph window region2And SiNxEtch away, form p-electrode window.
P-electrode is made in described electrode window through ray, is specially：P-electrode metal, p electricity are made using magnetically controlled sputter method
Pole metal material is Ti-Pt-Au, and thickness is respectively 50-50-300nm.
N-electrode is made at the described epitaxial wafer back side, is specially：Epitaxial wafer substrate is thinned to about 120 μm first and thrown
Light, overleaf makes n-electrode with magnetron sputtering method after cleaning up and carries out alloy, wherein n-electrode metal material is Ni-Ge-
Au。
A kind of 1.55 micron wave length GaAs base micro-cavity lasers are also show in the present embodiment, as shown in Figures 2 to 4, bag
Include on monocrystalline GaAs substrates, the GaAs substrates side epitaxial growth successively have cushion, n-type doping InP limiting layers,
InGaAsP lower waveguide layers, multi-quantum well active region, upper ducting layer, p-type doping InP limiting layers and p-type ohmic contact layer；It is described
Multi-quantum well active region includes 5 layers of InGaAs well layer and 6 layers of InGaAsP barrier layer, and the InGaAs well layer and InGaAsP barrier layer are handed over
For stacking, the first layer barrier layer is grown on n-type InGaAsP lower waveguide layers；The Echo Wall is etched with the GaAs epitaxial wafers
The micro-cavity structure of pattern, the micro-cavity structure of Whispering-gallery-mode can be circle, micro-loop, regular polygon.
As preferred, the cushion includes stacking gradually in n-type GaAs high temperature buffer layers, InP on GaAs substrates
Low temperature buffer layer and n-type InP high temperature buffer layers.
As preferred, the microcavity surface deposition has SiNxFilm, the microcavity side also spin coating has dielectric limiting layer,
The microcavity deposited atop has SiO2Insulating barrier, the insulating barrier is provided with p-electrode, and the GaAs substrates opposite side is provided with n
Electrode.
The application proposes a kind of 1.55 micron wave length GaAs base micro-cavity laser preparation methods and device, by being served as a contrast in GaAs
Bottom Epitaxial growth InP materials, realize the luminescence band of 5 microns of GaAs based 1.5s, and using the structure of micro-cavity laser, possess
High-quality-factor, low threshold current, the advantage such as be easy to integrated, preparation technology simple so that the direct epitaxial growth InP systems of GaAs bases
1.55 micron wave length laser performances prepared by material have larger lifting, cost reduction.Further, since GaAs substrates are relative
For InP substrate, price is lower, and is more suitable for some high-speed electronic components, therefore, 1.55 microns of wavelength prepared by the method
Laser is more suitable for that photoelectricity is integrated and industrialization production.
Finally, the present processes are only preferably embodiment, are not intended to limit the scope of the present invention.It is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements made etc. should be included in the protection of the present invention
Within the scope of.
Claims (10)
1. a kind of 1.55 micron wave length GaAs base micro-cavity laser preparation methods, it is characterised in that including：
S1, monocrystalline GaAs substrates side successively epitaxial growth buffer, limiting layer, lower waveguide layer, multi-quantum well active region, on
Ducting layer and ohmic contact layer；
S2, the making graphic mask layer on the ohmic contact layer, and with graphic mask layer for mask fabrication microcavity；
S3, the microcavity surface deposit SiNxFilm, and lateral dielectric limiting layer is made on the microcavity, in the microcavity
Top layer makes SiO2Insulating barrier；
S4, in the SiO2P-electrode is made on insulating barrier, n-electrode is made in the GaAs substrates opposite side.
2. 1.55 micron wave length GaAs base micro-cavity laser preparation methods according to claim 1, it is characterised in that in step
In rapid S1, the GaAs substrates are n-type GaAs substrates.
3. 1.55 micron wave length GaAs base micro-cavity laser preparation methods according to claim 1, it is characterised in that in step
In rapid S1, n-type GaAs high temperature buffer layers, InP low temperature buffer layers and the n-type InP high temperature that the cushion includes stacking gradually delay
Rush layer.
4. 1.55 micron wave length GaAs base micro-cavity laser preparation methods according to claim 3, it is characterised in that described
Step S1 is specifically included：
S11, by MOCVD methods, at a temperature of 720 DEG C, n-type Si doping GaAs cushions thick growth 300nm；
S12,450 DEG C are reduced the temperature to, pass through MOCVD methods, InP low temperature buffer layers thick growth 15nm；
S13, temperature is adjusted to 655 DEG C, 1000nm~1500nm is grown by MOCVD methods successively on InP low temperature buffer layers
The InP high temperature buffer layers of thick n-type Si doping, after the InP high temperature buffer layers growth terminates, in hydrogen and phosphine mixed gas
In-situ heat cycle annealing is carried out in atmosphere；
S14, temperature is adjusted to 655 DEG C, grows on InP high temperature buffer layers 300nm~500nm successively by MOCVD methods thick
The thick InGaAsP lower waveguide layers of InP limiting layers, 80nm~100nm of n-type Si doping, multi-quantum well active region, 80nm~
The thick p-type doping InP limiting layers of ducting layer, 1300nm~1500nm and the thick p of 150nm~300nm on InGaAsP thick 100nm
The InGaAs ohmic contact layers of type heavy doping.
5. 1.55 micron wave length GaAs base micro-cavity laser preparation methods according to claim 4, it is characterised in that described
In step S14, the multi-quantum well active region includes 5 layers of 5nm InGaAs well layer and 6 layers of 10nm InGaAsP barrier layer, described
Well layer and barrier layer are alternately laminated, and the first layer barrier layer is grown on n-type InGaAsP lower waveguide layers.
6. 1.55 micron wave length GaAs base micro-cavity laser preparation methods according to claim 1, it is characterised in that described
Step S2 is specifically included：
SiO is grown on ohmic contact layer by PECVD methods2Film, and utilize ICP lithographic methods etching SiO2Film, with light
Photoresist is mask by the cavity pattern transfer on photoresist to SiO2On film, SiO is made2Graphic mask layer；
With SiO2Graphic mask layer is mask, with ICP lithographic methods by SiO2Cavity pattern transfer on film is to GaAs epitaxial wafers
On, etch microcavity cavity, and the SiO that top layer is remained2Remove.
7. 1.55 micron wave length GaAs base micro-cavity laser preparation methods according to claim 1, it is characterised in that described
Step S3 is specifically included：
S31, the thick SiN of one layer of 200nm deposited on the microcavity surface by PECVD methodsxFilm；
S32, use sol evenning machine with 4000rpm~5000rpm rotating speeds in two times in SiNxBCB spin coatings are carried out on film, pass through RIE
Method removes the BCB films at the top of microcavity；
S33, using PECVD methods, in the thick SiO of one layer of 400nm of microcavity top layer deposition2Insulating barrier.
8. a kind of 1.55 micron wave length GaAs base micro-cavity lasers, it is characterised in that including monocrystalline GaAs substrates, the GaAs linings
Epitaxial growth has cushion, n-type doping InP limiting layers, an InGaAsP lower waveguide layers successively on the side of bottom, multi-quantum well active region,
Upper ducting layer, p-type doping InP limiting layers and p-type ohmic contact layer；The multi-quantum well active region includes 5 layers of InGaAs well layer
With 6 layers of InGaAsP barrier layer, the InGaAs well layer and InGaAsP barrier layer be alternately laminated, and the first layer barrier layer is grown on n-type
On InGaAsP lower waveguide layers；The micro-cavity structure of Whispering-gallery-mode is etched with the GaAs epitaxial wafers.
9. 1.55 micron wave length GaAs base micro-cavity lasers according to claim 8, it is characterised in that the cushion bag
Include and stack gradually in the n-type GaAs high temperature buffer layers on GaAs substrates, InP low temperature buffer layers and n-type InP high temperature buffer layers.
10. 1.55 micron wave length micro-cavity laser according to claim 8, it is characterised in that the microcavity surface deposition
There is SiNxFilm, the microcavity side also spin coating has dielectric limiting layer, and the microcavity deposited atop has SiO2Insulating barrier, it is described exhausted
Edge layer is provided with p-electrode, and the GaAs substrates opposite side is provided with n-electrode.
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