JPH0330486A - Multi quantum well light emitting element - Google Patents

Multi quantum well light emitting element

Info

Publication number
JPH0330486A
JPH0330486A JP16754989A JP16754989A JPH0330486A JP H0330486 A JPH0330486 A JP H0330486A JP 16754989 A JP16754989 A JP 16754989A JP 16754989 A JP16754989 A JP 16754989A JP H0330486 A JPH0330486 A JP H0330486A
Authority
JP
Japan
Prior art keywords
layer
inp
light emitting
emitting element
quantum well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16754989A
Inventor
Mitsuhiro Kitamura
Hiroyuki Yamazaki
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP16754989A priority Critical patent/JPH0330486A/en
Publication of JPH0330486A publication Critical patent/JPH0330486A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To make carriers uniform in distribution so as to obtain a muliple quantum well light emitting element excellent in characteristics by a method wherein donors and acceptors are partly added to the P-clad layer side and the N-buffer layer side of a semiconductor thin film which constitutes an active layer respectively.
CONSTITUTION: An N-InP buffer layer 2, a muliple quantum well active layer 3 composed of an InGaAs well layer 4 and an InP barrier layer 5, and a P-InP clad layer 6 are successively laminated on an InP substrate 1, and then a P- electrode 7 and an N-electrode 8 are provided to the P-InP clad layer 6 and the rear side of the substrate 1 to form a light emitting element. Moreover, donors are wholly added to the part of the active layer 3 close to the clad layer 6 and acceptors partly added to the part of the active layer 3 close to the buffer layer 2.
COPYRIGHT: (C)1991,JPO&Japio
JP16754989A 1989-06-28 1989-06-28 Multi quantum well light emitting element Pending JPH0330486A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16754989A JPH0330486A (en) 1989-06-28 1989-06-28 Multi quantum well light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16754989A JPH0330486A (en) 1989-06-28 1989-06-28 Multi quantum well light emitting element

Publications (1)

Publication Number Publication Date
JPH0330486A true JPH0330486A (en) 1991-02-08

Family

ID=15851777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16754989A Pending JPH0330486A (en) 1989-06-28 1989-06-28 Multi quantum well light emitting element

Country Status (1)

Country Link
JP (1) JPH0330486A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE42008E1 (en) 1999-06-07 2010-12-28 Nichia Corporation Nitride semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE42008E1 (en) 1999-06-07 2010-12-28 Nichia Corporation Nitride semiconductor device
USRE45672E1 (en) 1999-06-07 2015-09-22 Nichia Corporation Nitride semiconductor device

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