NL2026923B1 - Dual-wavelength monolithic integrated surface-emitting semiconductor laser - Google Patents

Dual-wavelength monolithic integrated surface-emitting semiconductor laser Download PDF

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NL2026923B1
NL2026923B1 NL2026923A NL2026923A NL2026923B1 NL 2026923 B1 NL2026923 B1 NL 2026923B1 NL 2026923 A NL2026923 A NL 2026923A NL 2026923 A NL2026923 A NL 2026923A NL 2026923 B1 NL2026923 B1 NL 2026923B1
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gan
layer
dbr
semiconductor laser
doping concentration
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Zeng Lina
Li Gongjie
Li Zajin
Zhao Zhibin
Peng Hongyan
Qiao Zhongliang
Qu Yi
Li Lin
Liu Guojun
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Univ Hainan Normal
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    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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Abstract

The present invention discloses a dual-wavelength monolithic integrated surface-emitting semiconductor laser, comprising a sapphire substrate, wherein a buffer layer, a first ottom DBR layer, a first lower barrier layer, a first active layer, a tunnel junction layer, a current injection layer, a first upper barrier layer, a first top DBR layer, an ohmic contact layer, a second bottom DBR layer, a second lower barrier layer, a second active layer, a second upper barrier layer, a second top DBR layer, a covering layer, a third bottom DBR layer, a third lower barrier layer, a third active layer, a third upper barrier layer, a third top DBR layer and a window layer are sequentially grown on the top of the sapphire substrate from the bottom up. The present invention can not only obtain a cavity mirror with high quality and high reflectivity, but also effectively reduce cavity length of a resonant cavity, which is beneficial to chip integration.

Description

DUAL-WAVELENGTH MONOLITHIC INTEGRATED SURFACE-EMITTING
SEMICONDUCTOR LASER Technical Field The present invention belongs to the technical field of semiconductor optoelectronics, and more particularly relates to a dual-wavelength monolithic integrated surface-emitting semiconductor laser.
Background In recent years, major technological breakthroughs have been made for GaN-based semiconductor materials in both epitaxial growth and optoelectronic device preparation. Among which, light-emitting diodes (LED) and edge-emitting lasers (EEL) have been industrialized. A blue-green light dual-wavelength monolithic integrated surface-emitting semiconductor laser has a broad application prospect in the fields such as high-density optical storage, laser display, laser printing, laser lighting, laser TV, underwater communication, marine resource detection and laser biomedicine.
A surface-emitting semiconductor laser resonant cavity is usually composed of a high- reflectivity distributed Bragg reflector (DBR). However, for a GaN-based semiconductor laser, it is very difficult to epitaxially grow DBR, and a DBR with a multilayer dielectric film is generally used to obtain a high-reflectivity resonant cavity. Since the dielectric film is not conductive, a surface-emitting semiconductor laser usually adopts ITO film inner cavity electrodes at present. Loss caused by absorption of the ITO film inner cavity electrodes and loss caused by an ITO/GaN interface result in relatively high threshold current and relatively low light output. Dual- wavelength monolithic integrated surface-emitting semiconductor lasers all use bonding technology to bond two laser chips of different emission wavelengths together, and the integration level is low. Output characteristics of a dual-wavelength laser are affected by factors such as bonding temperature, pressure and bonding agent, so that it is difficult to obtain stable laser output characteristics, which is not beneficial to chip integration.
Therefore, the problem to be urgently solved by those skilled in the art is how to provide a dual-wavelength monolithic integrated surface-emitting semiconductor laser.
Summary In view of this, the present invention provides a dual-wavelength monolithic integrated surface-emitting semiconductor laser, which can not only obtain a cavity mirror with high quality and high reflectivity, but also effectively reduce cavity length of a resonant cavity, which is beneficial to chip integration.
To achieve the above purpose, the present invention adopts the following technical solution:
A dual-wavelength monolithic integrated surface-emitting semiconductor laser, comprising a sapphire substrate, wherein a buffer layer, a first bottom DBR layer, a first lower barrier layer, a first active layer, a tunnel junction layer, a current injection layer, a first upper barrier layer, a first top DBR layer, an ohmic contact layer, a second bottom DBR layer, a second lower barrier layer, a second active layer, a second upper barrier layer, a second top DBR layer, a covering layer, a third bottom DBR layer, a third lower barrier layer, a third active layer, a third upper barrier layer, a third top DBR layer and a window layer are sequentially grown on the top of the sapphire substrate from the bottom up.
Preferably, the semiconductor laser is treated by first ICP etching to form a first photoetching and ICP etching channel, and the first photoetching and ICP etching channel is extended from the tunnel junction layer to the window layer.
Preferably, the semiconductor laser is treated by second ICP etching to form a second photoetching and ICP etching channel, and the second photoetching and ICP etching channel is extended from the first bottom DBR layer to the window layer.
Preferably, the first bottom DBR layer is an n-type n-GaN/n*-GaN DBR homojunction material with different doping concentrations that is epitaxially grown, the total quantity of n-GaN and n*-GaN is 20 pairs, the thicknesses are respectively 35 nm and 50 nm, the doping concentration of n-GaN is n=1E18/cm3, and the doping concentration of n*-GaN is n=1E19/cm3.
Preferably, the tunnel junction layer is heavily doped n*-GaN/p*-GaN, the doping concentrations of n*-GaN and p*-GaN are both 5E19/cm}3, and the thicknesses are respectively 15 nm and 10 nm.
Preferably, the first top DBR layer is an n-type n-GaN/n*-GaN DBR homojunction material with different doping concentrations that is epitaxially grown, the total quantity of n-GaN and n*- GaN is 15 pairs, the thicknesses are respectively 35 nm and 50 nm, the doping concentration of n-GaN is n=1E18/cm?®, and the doping concentration of n*-GaN is n=1E19/cm:.
Preferably, the second bottom DBR layer is an n-type n-GaN/n*-GaN DBR homojunction material with different doping concentrations that is epitaxially grown, the total quantity of n-GaN and n*-GaN is 20 pairs, the thicknesses are respectively 40 nm and 55 nm, the doping concentration of n-GaN is n=1E18/cm?, and the doping concentration of n*-GaN is n=1E19/cm?.
Preferably, the second top DBR layer is an n-type n-GaN/n*-GaN DBR homojunction material with different doping concentrations that is epitaxially grown, the total quantity of n-GaN and n*-GaN is 15 pairs, the thicknesses are respectively 40 nm and 55 nm, the doping concentration of n-GaN is n=1E18/cm?, and the doping concentration of n*-GaN is n=1E19/cm3.
Preferably, the third bottom DBR layer is an n-type n-GaN/n*-GaN DBR homojunction material with different doping concentrations that is epitaxially grown, the total quantity of n-GaN and n*-GaN is 20 pairs, the thicknesses are respectively 50 nm and 70 nm, the doping concentration of n-GaN is n=1E18/cm?, and the doping concentration of n*-GaN is n=1E19/cm?.
Preferably, the third top DBR layer is an n-type n-GaN/n*-GaN DBR homojunction material with different doping concentrations that is epitaxially grown, the total quantity of n-GaN and n*- GaN is 15 pairs, the thicknesses are respectively 50 nm and 70 nm, the doping concentration of n-GaN is n=1E18/cm3, and the doping concentration of n*-GaN is n=1E19/cm?3.
The present invention has the following beneficial effects: The present invention has a compact structure which is an epitaxially grown surface- emitting semiconductor laser structure of near ultraviolet to blue-green light wavelengths, and forms a near ultraviolet laser pumped blue-green dual-wavelength monolithic integrated surface-emitting semiconductor laser; all structures of the semiconductor laser are directly obtained by epitaxial growth, which solves the problem of epitaxially growing DBR, and three active layers with different emission wavelengths and multiple pairs of DBR layers can be completed in one epitaxial growth. The dual-wavelength monolithic integrated surface-emitting semiconductor laser can not only obtain a cavity mirror with high quality and high reflectivity, but also effectively reduce cavity length of a resonant cavity, which is beneficial to chip integration.
Description of Drawings To more clearly describe the technical solution in the embodiments of the present invention or in the prior art, the drawings required to be used in the description of the embodiments or the prior art will be simply presented below. Apparently, the drawings in the following description are merely the embodiments of the present invention, and for those ordinary skilled in the art, other drawings can also be obtained according to the provided drawings without contributing creative labour.
Fig. 1 is a structural schematic diagram of the present invention.
Fig. 2 is a structural schematic diagram of a dual-wavelength monolithic integrated surface- emitting semiconductor laser of the present invention treated by ICP etching twice.
In the figures: 1 sapphire substrate, 2 buffer layer, 3 first bottom DBR layer, 4 first lower barrier layer, 5 first active layer, 6 tunnel junction layer, 7 current injection layer, 8 first upper barrier layer, 9 first top DBR layer, 10 ohmic contact layer, 11 second bottom DBR layer, 12 second lower barrier layer, 13 second active layer, 14 second upper barrier layer, 15 second top DBR layer, 16 covering layer, 17 third bottom DBR layer, 18 third lower barrier layer, 19 third active layer, 20 third upper barrier layer, 21 third top DBR layer, 22 window layer, 30 first bottom DBR etching area, 31 tunnel junction etching area, 32 current injection aperture area, 33 first top DBR etching area, 34 second bottom DBR etching area, 35 second top DBR etching area, 36 third bottom DBR etching area, 37 third top DBR etching area, 40 first photoetching and ICP etching channel, and 41 second photoetching and ICP etching channel.
Detailed Description The technical solution in the embodiments of the present invention will be clearly and fully described below in combination with the drawings in the embodiments of the present invention.
Apparently, the described embodiments are merely part of the embodiments of the present invention, not all of the embodiments.
Based on the embodiments in the present invention, all other embodiments obtained by those ordinary skilled in the art without contributing creative labour will belong to the protection scope of the present invention.
Referring to Figs. 1-2, the present invention provides a dual-wavelength monolithic integrated surface-emitting semiconductor laser, comprising a sapphire substrate 1, wherein a buffer layer 2, a first bottom DBR layer 3, a first lower barrier layer 4, a first active layer 5, a tunnel junction layer 6, a current injection layer 7, a first upper barrier layer 8, a first top DBR layer 9, an ohmic contact layer 10, a second bottom DBR layer 11, a second lower barrier layer 12, a second active layer 13, a second upper barrier layer 14, a second top DBR layer 15, a covering layer 16, a third bottom DBR layer 17, a third lower barrier layer 18, a third active layer 19, a third upper barrier layer 20, a third top DBR layer 21 and a window layer 22 are sequentially grown on the top of the sapphire substrate 1 from the bottom up.
Wherein the sapphire substrate 1 is used to epitaxially grow various layers of materials of a vertical cavity surface-emitting laser thereon.
The buffer layer 2 is a GaN material with a thickness of 1000 nm.
The buffer layer 2 is grown on the sapphire substrate 1 to prevent the transfer of defects in the sapphire substrate 1. The first bottom DBR layer 3 is an n-type n-GaN/n*-GaN DBR homojunction material with different doping concentrations that is epitaxially grown, the total quantity of n-GaN and n*-GaN is 20 pairs, the thicknesses are respectively 35 nm and 50 nm, the doping concentration of n- GaN is n=1E18/cm?, and the doping concentration of n*-GaN is n=1E19/cm?®. Ultraviolet light reflectivity of this layer can reach more than 99.5%, and this layer is used as a bottom DBR to totally reflect the ultraviolet light generated by the first active layer.
The first lower barrier layer 4 is a GaN material with a thickness of 100 nm.
The first active layer 5 is a multi-quantum well layer, and the emission wavelength thereof is 380 nm-390 nm.
Ultraviolet light of this wave band is oscillated and emitted by lasing in a resonant cavity, and the emitted ultraviolet light is emitted from the first active layer to the second active layer.
The tunnel junction layer 6 is heavily doped n*-GaN/p*-GaN, the doping concentrations of n*-GaN and p*-GaN are both 5E19/cm?, and the thicknesses are respectively 15 nm and 10 nm.
If the doping concentrations of the tunnel junction layer are increased or the thickness of the tunnel junction layer is reduced, the threshold current density of a device can be reduced; and if the thickness of the tunnel junction layer is too large, the tunneling efficiency of electrons will be reduced.
The current injection layer 7 is an n*-GaN material with a thickness of 50 nm, and the doping concentration thereof is n=5E19/cm3. Current injection efficiency can be affected by the thickness and doping concentration of the current injection layer, and when the doping concentration is increased, the current injection efficiency will be increased.
5 The first upper barrier layer 8 is a GaN material with a thickness of 100 nm.
The first top DBR layer 9 is an n-type n-GaN/n*-GaN DBR homojunction material with different doping concentrations that is epitaxially grown, the total quantity of n-GaN and n*-GaN is 15 pairs, the thicknesses are respectively 35 nm and 50 nm, the doping concentration of n- GaN is n=1E18/cm?®, and the doping concentration of n*-GaN is n=1E19/cm3. The material thickness of the first top DBR layer should satisfy that ultraviolet light reflectivity of this layer can reach more than 99%. If the ratio of doping concentrations of this DBR layer is greater than 10, the refractive index difference of the DBR layer obtained is about 0.5, which is beneficial to reducing the total pairs of the DBR layer.
The ohmic contact layer 10 is an n*-GaN material with a thickness of 300 nm, and the doping concentration thereof is n=5E19/cm3. This layer is beneficial to reducing the contact resistance of the device. If the doping concentration of this layer is increased, ohmic contact resistance will be reduced.
The second bottom DBR layer 11 is an n-type n-GaN/n*-GaN DBR homojunction material with different doping concentrations that is epitaxially grown, the total quantity of n-GaN and n*- GaN is 20 pairs, the thicknesses are respectively 40 nm and 55 nm, the doping concentration of n-GaN is n=1E18/cm3, and the doping concentration of n*-GaN is n=1E19/cm?. Blue light reflectivity of this layer can reach more than 99.5%, and this layer is used as a bottom DBR to totally reflect the blue light generated by the second active layer.
The second lower barrier layer 12 is a GaN material with a thickness of 100 nm.
The second active layer 13 is a multi-quantum well layer, and the emission wavelength thereof is 420 nm-430 nm. Blue light of this wave band is oscillated and emitted by lasing in a resonant cavity, and the emitted blue light is emitted from the second active layer to the third active layer.
The second upper barrier layer 14 is a GaN material with a thickness of 100 nm.
The second top DBR layer 15 is an n-type n-GaN/n*-GaN DBR homojunction material with different doping concentrations that is epitaxially grown, the total quantity of n-GaN and n*-GaN is 15 pairs, the thicknesses are respectively 40 nm and 55 nm, the doping concentration of n- GaN is n=1E18/cm?®, and the doping concentration of n*-GaN is n=1E19/cm3. The material thickness of the second top DBR layer should satisfy that blue light reflectivity of this layer can reach more than 99%. If the ratio of doping concentrations of this DBR layer is greater than 10, the refractive index difference of the DBR layer obtained is about 0.5, which is beneficial to reducing the total pairs of the DBR layer.
The covering layer 16 is an n*-GaN material with a thickness of 200 nm, and the doping concentration thereof is n=1E18/cm?.
The third bottom DBR layer 17 is an n-type n-GaN/n*-GaN DBR homojunction material with different doping concentrations that is epitaxially grown, the total quantity of n-GaN and n*-GaN is 20 pairs, the thicknesses are respectively 50 nm and 70 nm, the doping concentration of n- GaN is n=1E18/cm?®, and the doping concentration of n*-GaN is n=1E19/cm3. Green light reflectivity of this layer can reach more than 99.5%, and this layer is used as a bottom DBR to totally reflect the green light generated by the third active layer.
The third lower barrier layer 18 is a GaN material with a thickness of 100 nm.
The third active layer 19 is a multi-quantum well layer, and the emission wavelength thereof is 520 nm-530 nm. Green light of this wave band is oscillated and emitted by lasing in a resonant cavity, and the emitted green light is emitted from the third active layer to the window layer.
The third upper barrier layer 20 is a GaN material with a thickness of 100 nm.
The third top DBR layer 21 is an n-type n-GaN/n*-GaN DBR homojunction material with different doping concentrations that is epitaxially grown, the total quantity of n-GaN and n*-GaN is 15 pairs, the thicknesses are respectively 50 nm and 70 nm, the doping concentration of n- GaN is n=1E18/cm?®, and the doping concentration of n*-GaN is n=1E19/cm3. The material thickness of the third top DBR layer should satisfy that green light reflectivity of this layer can reach more than 99%. If the ratio of doping concentrations of this DBR layer is greater than 10, the refractive index difference of the DBR layer obtained is about 0.5, which is beneficial to reducing the total pairs of the DBR layer.
The window layer 22 is a GaN material with a thickness of 100 nm.
The present invention proposes a method for manufacturing a DBR and a current injection aperture of a dual-wavelength monolithic integrated surface-emitting semiconductor laser. The specific steps are as follows: first, using MOCVD epitaxial growth equipment to epitaxially grow each layer of material on a substrate layer from the bottom up; epitaxial growth from the buffer layer 2 to the window layer 22 is completed at one time, and no secondary epitaxial growth is needed, therefore the contamination of an epitaxial wafer during the secondary epitaxial growth is avoided, and the quality of the epitaxial growth of a chip material is ensured.
Second, treating the semiconductor laser by first ICP etching to form the first photoetching and ICP etching channel 40; the first photoetching and ICP etching channel 40 is extended from the tunnel junction layer 6 to the window layer 22; and by the first ICP etching, the tunnel junction etching area 31 is formed in the tunnel junction layer 6, and the current injection aperture area 32 is formed in the current injection layer 7. After the first ICP etching, an electrochemical etching process is used, an etching solution is a strong acid (for example: sulphuric acid or nitric acid) or a strong alkali (for example: sodium hydroxide or potassium hydroxide), and the etching voltage is adjusted to be 1.5 V-3 V; after 3-5 hours of etching, when a required current injection aperture size (10 microns to 30 microns) is obtained, the voltage is increased to 2-3 times of the original etching voltage; reaction is over after 5 minutes, and a current aperture for near ultraviolet laser of a surface-emitting laser epitaxial wafer is manufactured. The current injection aperture can form a current injection channel, which effectively reduces the lateral diffusion loss of an injected current, and is beneficial to the threshold current density of the device.
Then, treating the semiconductor laser by second ICP etching to form the second photoetching and ICP etching channel 41; the second photoetching and ICP etching channel 41 is extended from the first bottom DBR layer 3 to the window layer 22; and by the second ICP etching, the first bottom DBR etching area 30 is formed in the first bottom DBR layer 3, the first top DBR etching area 33 is formed in the top DBR layer 9, the second bottom DBR etching area 34 is formed in the second bottom DBR layer 11, the second top DBR etching area 35 is formed in the second top DBR layer 15, the third bottom DBR etching area 36 is formed in the third bottom DBR layer 17, and the third top DBR etching area 37 is formed in the third top DBR layer
21. After the second ICP etching, an electrochemical etching process is used, an etching solution is a strong acid (for example: sulphuric acid or nitric acid) or a strong alkali (for example: sodium hydroxide or potassium hydroxide), and the etching voltage is adjusted to be
1.5 V-3 V; after 5-8 hours of etching, the manufacturing of a DBR in an epitaxial wafer structure is completed at one time, and the manufacturing of all resonant cavities in a chip is realized. A conventional chip electrode preparation process is used to realize light emitting by electrically pumped lasing. An ultraviolet light resonant cavity is composed of the first bottom DBR etching area and the first top DBR etching area, which is beneficial to obtaining ultraviolet laser output; a blue light resonant cavity is composed of the second bottom DBR etching area and the second top DBR etching area, which is beneficial to blue laser output; and a green light resonant cavity is composed of the third bottom DBR etching area and the third top DBR etching area, which is beneficial to green laser output. The present invention is beneficial to realizing the laser output of multi-stage pump light by monolithic integrated electro-optical hybrid pumping; first, lasing is electrically pumped by a first stage to obtain ultraviolet light; then a second stage is pumped by the ultraviolet light of the first stage to obtain blue laser, a third stage is pumped by the blue light of the second stage to obtain green laser output, and so on; finally, monolithic integrated laser of multi-stage pump light is realized.
Wherein an ICP etching gas is a mixed gas of SFs/BCls (with a gas volume ratio of 2:3), the etching rate is 10 nm/min, and a controllable etching rate can be obtained. An etching mask material is SiO2 or SisN4. Compared with the mask material SiO», the mask material SizsNa4 is used to obtain a more vertical and smooth etching sidewall.
After the first photoetching and ICP dry etching process, the present invention realizes the manufacturing of a current injection aperture of a near ultraviolet surface-emitting laser epitaxial wafer; and after the second photoetching and ICP dry etching process, the present invention completes the manufacturing process of a blue-green dual-wavelength monolithic integrated vertical cavity surface-emitting laser.
The present invention proposes a method for manufacturing electrodes of a dual- wavelength monolithic integrated surface-emitting semiconductor laser, which is an electrode manufacturing process using a conventional semiconductor laser chip, and the electrodes of the chip are respectively manufactured on the ohmic contact layer and the buffer layer.
In the present invention, electrically pumped lasing is provided by a first active area to generate near ultraviolet laser, a current is injected into the first active area to generate near ultraviolet laser excited by electrical injection, the near ultraviolet laser is used as a pumping source, and a second active area and a third active area are pumped, thus blue-green dual- wavelength laser is obtained on a single chip.
The present invention proposes a dual-wavelength monolithic integrated surface-emitting semiconductor laser structure, and a surface-emitting laser resonant cavity with high reflectivity is realized by epitaxially growing homojunction DBR without the need of a high-reflectivity resonant cavity coating process, so that high-quality cavity mirror materials can be ensured, and the problems of complex mould system design of a cavity mirror and preparation of high- reflecting film and antireflection film can be solved.
The present invention has a compact structure which is an epitaxially grown surface- emitting semiconductor laser structure of near ultraviolet to blue-green light wavelengths, and forms a near ultraviolet laser pumped blue-green dual-wavelength monolithic integrated surface-emitting semiconductor laser; all structures of the semiconductor laser are directly obtained by epitaxial growth, which solves the problem of epitaxially growing DBR, and three active layers with different emission wavelengths and multiple pairs of DBR layers can be completed in one epitaxial growth. The dual-wavelength monolithic integrated surface-emitting semiconductor laser can not only obtain a cavity mirror with high quality and high reflectivity, but also effectively reduce cavity length of a resonant cavity, which is beneficial to chip integration. The present invention adopts a surface-emitting semiconductor laser of near ultraviolet wavelength as a pump light source to obtain a near ultraviolet single-chip laser integrated pumping source, and realize a blue-green light dual-wavelength monolithic integrated surface- emitting semiconductor laser.
Each embodiment in the description is described in a progressive way. The difference of each embodiment from each other is the focus of explanation. The same and similar parts among all of the embodiments can be referred to each other. For a device disclosed by the embodiments, because the device corresponds to a method disclosed by the embodiments, the device is simply described. Refer to the description of the method part for the related part.

Claims (10)

CONCLUSIESCONCLUSIONS 1. Een monolithische geïntegreerde oppervlakemitterende halfgeleiderlaser met twee golflengten, omvattende een saffiersubstraat, waarbij een bufferlaag, een eerste DBR - bodemlaag, een eerste barrière - onderlaag, een eerste werkzame laag, een tunnelverbindingslaag, een stroominjectielaag, een eerste barrière - bovenlaag, een eerste DBR - toplaag, een ohmse contactlaag, een tweede DBR - bodemlaag, een tweede barrière - onderlaag, een tweede werkzame laag, een tweede barrière - bovenlaag, een tweede DBR - toplaag, een afdekkende laag, een derde DBR - bodemlaag, een derde barrière - onderlaag, een derde werkzame laag, een derde barrière - bovenlaag, een derde DBR - toplaag en een raamlaag van onder af achtereenvolgens op de bovenzijde van het saffiersubstraat zijn gegroeid.A monolithic two-wavelength integrated surface-emitting semiconductor laser comprising a sapphire substrate, wherein a buffer layer, a first DBR - bottom layer, a first barrier - lower layer, a first active layer, a tunnel junction layer, a current injection layer, a first barrier - top layer, a first DBR - top layer, an ohmic contact layer, a second DBR - bottom layer, a second barrier - bottom layer, a second active layer, a second barrier - top layer, a second DBR - top layer, a capping layer, a third DBR - bottom layer, a third barrier - lower layer, a third active layer, a third barrier - top layer, a third DBR - top layer and a window layer from below are sequentially grown on the top of the sapphire substrate. 2. De monolithische geïntegreerde oppervlak-emitterende halfgeleiderlaser met twee golflengten volgens de conclusie 1, waarbij de halfgeleiderlaser is behandeld door een eerste ICP-etsen om een eerste foto-ets- en ICP-etskanaal te vormen, en het eerste foto- ets- en ICP-etskanaal zich vanaf de tunnelverbindingslaag naar de vensterlaag toe uitstrekt.The monolithic two-wavelength integrated surface-emitting semiconductor laser according to claim 1, wherein the semiconductor laser is treated by a first ICP etch to form a first photoetch and ICP etch channel, and the first photoetch and ICP etch channel extends from the tunnel link layer to the window layer. 3. De monolithische geïntegreerde oppervlak-emitterende halfgeleiderlaser met twee golflengten volgens de conclusie 2, waarbij de halfgeleiderlaser is behandeld door een tweede ICP-etsen om een tweede foto-ets- en ICP-etskanaal te vormen, en het tweede foto-ets- en ICP-etskanaal zich vanaf de eerste onderste DBR-laag naar de vensterlaag toe uitstrekt.The two-wavelength monolithic integrated surface-emitting semiconductor laser according to claim 2, wherein the semiconductor laser is treated by a second ICP etch to form a second photo-etch and ICP etch channel, and the second photo-etch and ICP etch channel extends from the first lower DBR layer to the window layer. 4. De monolithische geïntegreerde oppervlak-emitterende halfgeleiderlaser met twee golflengten volgens de conclusie 1, waarbij de eerste DBR - bodemlaag een n-type n- GaN/n+-GaN DBR homojunctie materiaal is met verschillende doteringconcentraties dat epitaxiaal is gegroeid, waarbij de totale hoeveelheid n-GaN en n+-GaN 20 paar bedraagt, de diktes respectievelijk 35 nm en 50 nm zijn, de doteringconcentratie van n-GaN gelijk is aan n=1E18/cm? en de doteringconcentratie van n+-GaN gelijk is aan n=1E19/cm3.The two-wavelength monolithic integrated surface-emitting semiconductor laser according to claim 1, wherein the first DBR - bottom layer is an n-type n-GaN/n+ -GaN DBR homojunction material having different doping concentrations grown epitaxially, wherein the total amount n-GaN and n+-GaN is 20 pairs, the thicknesses are 35 nm and 50 nm, respectively, the doping concentration of n-GaN is equal to n=1E18/cm? and the doping concentration of n+-GaN is n=1E19/cm 3 . 5. De monolithische geïntegreerde oppervlak-emitterende halfgeleiderlaser met twee golflengten volgens de conclusie 1, waarbij de tunnelverbindingslaag zwaar gedoteerd n+- GaN/p+-GaN is, de doteringconcentraties van n+-GaN en p+-GaN beide 5E19/cm?® bedragen en de diktes respectievelijk 15 nm en 10 nm zijn.The monolithic two-wavelength integrated surface-emitting semiconductor laser according to claim 1, wherein the tunnel junction layer is heavily doped n+-GaN/p+-GaN, the doping concentrations of n+-GaN and p+-GaN are both 5E19/cm ® , and the thicknesses are 15 nm and 10 nm, respectively. 6. De monolithische geïntegreerde oppervlak-emitterende halfgeleiderlaser met twee golflengten volgens de conclusie 1, waarbij de eerste DBR - toplaag een n-type n-GaN/n+-The monolithic integrated surface-emitting two-wavelength semiconductor laser according to claim 1, wherein the first DBR - top layer is an n-type n-GaN/n+ - GaN DBR homojunctie materiaal is met verschillende doteringconcentraties dat epitaxiaal is gegroeid, waarbij de totale hoeveelheid n-GaN en n+-GaN 15 paar bedraagt, de diktes respectievelijk 35 nm en 50 nm zijn, de dopingconcentratie van n-GaN gelijk is aan n=1E18/cm?® en de dopingconcentratie van n+-GaN gelijk is aan n=1E19/cm?.GaN DBR homojunction material is with different doping concentrations grown epitaxially, the total amount of n-GaN and n+-GaN is 15 pairs, the thicknesses are 35nm and 50nm respectively, the doping concentration of n-GaN is equal to n=1E18 /cm?® and the doping concentration of n+-GaN is equal to n=1E19/cm?. 7. De monolithische geïntegreerde oppervlak-emitterende halfgeleiderlaser met twee golflengten volgens de conclusie 1, waarbij de tweede DBR - bodemlaag een n-type n- GaN/n+-GaN DBR homojunctie materiaal is met verschillende doteringconcentraties dat epitaxiaal is gegroeid, waarbij de totale hoeveelheid n-GaN en n+-GaN 20 paar bedraagt, de diktes respectievelijk 40 nm en 55 nm zijn, de doteringconcentratie van n-GaN gelijk is aan n=1E18/cm3 en de dopingconcentratie van n+-GaN gelijk is aan n=1E19/cm?.The two-wavelength monolithic integrated surface-emitting semiconductor laser according to claim 1, wherein the second DBR - bottom layer is an n-type n-GaN/n+ -GaN DBR homojunction material having different doping concentrations grown epitaxially, wherein the total amount n-GaN and n+-GaN is 20 pairs, the thicknesses are 40 nm and 55 nm respectively, the doping concentration of n-GaN is equal to n=1E18/cm3 and the doping concentration of n+-GaN is equal to n=1E19/cm ?. 8. De monolithische geïntegreerde oppervlak-emitterende halfgeleiderlaser met twee golflengten volgens de conclusie 1, waarbij de tweede DBR - toplaag een n-type n-GaN/n+- GaN DBR homojunctie materiaal is met verschillende doteringconcentraties dat epitaxiaal is gegroeid, waarbij de totale hoeveelheid n-GaN en n+-GaN 15 paar bedraagt, de diktes respectievelijk 40 nm en 55 nm bedragen, de doteringconcentratie van n-GaN gelijk is aan n=1E18/cm?® en de dopingconcentratie van n+-GaN gelijk is aan n=1E19/cm?.The two-wavelength monolithic integrated surface-emitting semiconductor laser according to claim 1, wherein the second DBR - top layer is an n-type n-GaN/n+-GaN DBR homojunction material having different doping concentrations grown epitaxially, wherein the total amount n-GaN and n+-GaN is 15 pairs, the thicknesses are 40 nm and 55 nm respectively, the doping concentration of n-GaN is equal to n=1E18/cm?® and the doping concentration of n+-GaN is equal to n=1E19 /cm?. 9. De monolithische geïntegreerde oppervlak-emitterende halfgeleiderlaser met twee golflengten volgens de conclusie 1, waarbij de derde DBR - bodemlaag een homojunctie materiaal van het n-GaN/n+-GaN-type is met verschillende doteringconcentraties, dat epitaxiaal is gegroeid, waarbij de totale hoeveelheid n-GaN en n+-GaN 20 paar bedraagt, de diktes respectievelijk 50 nm en 70 nm bedragen, de doteringconcentratie van n-GaN gelijk is aan n=1E18/cm? en de dopingconcentratie van n+-GaN gelijk is aan n=1E19/cm?.The two-wavelength monolithic integrated surface-emitting semiconductor laser according to claim 1, wherein the third DBR - bottom layer is an n-GaN/n+-GaN type homojunction material having different dopant concentrations, which is grown epitaxially, wherein the total amount of n-GaN and n+-GaN is 20 pairs, the thicknesses are 50 nm and 70 nm respectively, the doping concentration of n-GaN is equal to n=1E18/cm? and the doping concentration of n+-GaN is equal to n=1E19/cm 2 . 10. De monolithische geïntegreerde oppervlak-emitterende halfgeleiderlaser met twee golflengten volgens de conclusie 1, waarbij de derde DBR - toplaag een n-type n-GaN/n+- GaN DBR homojunctie materiaal is met verschillende doteringconcentraties dat epitaxiaal is gegroeid, waarbij de totale hoeveelheid n-GaN en n+-GaN 15 paar bedraagt, de diktes respectievelijk 50 nm en 70 nm bedragen, de doteringconcentratie van n-GaN gelijk is aan n=1E18/cm?® en de dopingconcentratie van n+-GaN gelijk is aan n=1E19/cm?.The monolithic two-wavelength integrated surface-emitting semiconductor laser according to claim 1, wherein the third DBR - top layer is an n-type n-GaN/n+ -GaN DBR homojunction material having different doping concentrations grown epitaxially, wherein the total amount n-GaN and n+-GaN is 15 pairs, the thicknesses are 50 nm and 70 nm respectively, the doping concentration of n-GaN is equal to n=1E18/cm?® and the doping concentration of n+-GaN is equal to n=1E19 /cm?.
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