CN108155561A - Epitaxial growth two-wavelength semiconductor laser - Google Patents
Epitaxial growth two-wavelength semiconductor laser Download PDFInfo
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- CN108155561A CN108155561A CN201810058294.1A CN201810058294A CN108155561A CN 108155561 A CN108155561 A CN 108155561A CN 201810058294 A CN201810058294 A CN 201810058294A CN 108155561 A CN108155561 A CN 108155561A
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- pump light
- vertical cavity
- dbr
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18397—Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses an epitaxial growth two-wavelength semiconductor laser, including pump light vertical cavity, the vertical cavity that is excited and GaAs substrates.Pumped vertical cavity generates the adjustable laser of upper and lower directions light power simultaneously, the laser of upper direction outgoing enters as pump light to be excited in vertical cavity, optical pumping is excited the lasing of vertical cavity laser, it is achieved thereby that integrated vertical cavity dual-wavelength lasing, so that dual-wavelength laser is emitted from the both direction up and down of integrated vertical cavity, the collection pump light vertical cavity, the vertical cavity that is excited is once are epitaxially-formed.
Description
Technical field
The invention belongs to semiconductor laser field more particularly to an epitaxial growth two-wavelength semiconductor lasers.
Background technology
One of the core devices of semiconductor laser as optoelectronic areas, have many advantages, such as that size is small, are easily integrated.
Laser communication and pumping source domain are used widely.Perfect with preparation process, each of semiconductor laser obtains to performance
To significantly being promoted, wherein can realize that the semiconductor laser of two kinds of wavelength lasings particularly induces one to close with more highly integrated effect
Note.This semiconductor laser being easily integrated can realize the lasing of dual wavelength, excitation wavelength can unrestricted choice, two kinds of wavelength
Lasing power can adjust as needed.Wherein, the laser of 980nm and 1064nm can be simultaneously applied in medical field, using not
Same wavelength characteristic and power realize the effects that incisional laser surgery, skin closure operation.Dual wavelength or multi-wavelength can be applicable to
Optical communication field, laser radar, detection of gas etc., 1064nm wavelength lasers are particularly important in military field.Other methods
It realizes dual-wavelength lasing, generally requires secondary epitaxy process or need to be handled with reference to bonding technology, bonding semiconductor work
For skill yields than relatively low, the influence factor being subject to is relatively more, most simply such as the pollution problem that bonding process is brought, bonding technology pair
Temperature has higher control requirement, and thermal stress and the influence strained generate the defects of more.
Invention content
In order to solve the above technical problem, the present invention provides a kind of epitaxial growth two-wavelength semiconductor laser,
Based on the laser structure, the lasing of single-chip integration dual wavelength can be realized.
In order to realize above-mentioned target, the present invention adopts the following technical scheme that：
Epitaxial growth two-wavelength semiconductor laser is served as a contrast including pump light vertical cavity, the vertical cavity that is excited and GaAs
Bottom, pumped vertical cavity generate the adjustable laser of upper and lower directions light power simultaneously, the laser of upper direction outgoing as pump light into
Enter to be excited in vertical cavity, optical pumping is excited the lasing of vertical cavity, it is achieved thereby that integrated vertical cavity dual-wavelength lasing so that
Dual-wavelength laser is emitted from the both direction up and down of integrated vertical cavity, and the collection pump light vertical cavity, the vertical cavity that is excited exist
It is completed on GaAs substrates by an epitaxial growth.
As a preferred embodiment, the vertical cavity that vertical cavity is 1064nm that is excited.
As a preferred embodiment, wherein the vertical cavity of 1064nm from top to bottom successively include 1064nm on DBR speculums,
DBR speculums under 1064nm multi-quantum well active regions, 1064nm, pump light source vertical cavity include pump light successively from top to bottom
The upper DBR speculums of vertical cavity, the multi-quantum well active region of pump light vertical cavity, pump light vertical cavity lower DBR speculums.
As a preferred embodiment, the wavelength of pump light meets the specific light transmission condition of DBR under 1064nm.
As a preferred embodiment, the wavelength of pump light is：980nm, 958nm or 936nm.
As a preferred embodiment, the active area of pump light vertical cavity uses InyGa1-yAs material systems, wherein 0.1<y<
0.25。
As a preferred embodiment, the DBR of pump light vertical cavity, the vertical cavity that is excited has identical material system GaAs/
AlxGa1-xAs, the Al components in same dbr structure are consistent, wherein 0.6<x<0.9.
As a preferred embodiment, the active area of pump light vertical cavity uses multi-quantum pit structure, and Quantum Well number x, 2<x<5.
As a preferred embodiment, the reflectivity up and down of the lower DBR speculums of the upper DBR speculums and pump light of pump light is more than
99.5%, in order to realize that the reflectivity of the upper and lower DBR speculums of pump light is identical, the number of the upper and lower DBR speculums of pump light
Mesh is consistent, equal to reach light power.
As a preferred embodiment, the reflectivity up and down of the lower DBR speculums of the upper DBR speculums and pump light of pump light is more than
99.5%, in order to realize the upper DBR reflectivity of pump light be more than pump light lower DBR reflectance of reflector, pump light it is upper
The number of DBR speculums is more than the lower DBR mirror counts of pump light, to reach upper direction light power less than lower direction.
As a preferred embodiment, the reflectivity up and down of the lower DBR speculums of the upper DBR speculums and pump light of pump light is more than
99.5%, in order to realize the upper DBR reflectivity of pump light be less than pump light lower DBR reflectance of reflector, pump light it is upper
The number of DBR speculums is less than the lower DBR mirror counts of pump light, to reach upper direction light power more than lower direction.
As a preferred embodiment, the reflectivity of the lower DBR speculums of the vertical cavity of 1064nm is vertical more than 99.9%, 1064nm
The upper DBR reflectance of reflector of chamber is more than 99.5%.
As a preferred embodiment, 1064nm multi-quantum well active regions use InxGa1-xAs material systems, wherein 0.30<x<
0.32。
As a preferred embodiment, 1064nm multi-quantum well active regions use multi-quantum pit structure, Quantum Well number, x, 2<x<5.
As a preferred embodiment, the P-type electrode of pump light vertical cavity is plated under 1064nm on DBR speculums, and to 1064nm
Lower DBR speculums carry out p-type doping.
Compared with prior art, the beneficial technique effect of the present invention is：
For pump light vertical cavity and the integrated vertical cavity structure of 1064nm, by the pump light vertical cavity knot for pumping driving
Structure, for determining 1064nm vertical cavity structures, selecting the light of specific wavelength, optimization design pump light hangs down as pump light source
The parameters of DBR up and down of straight chamber realize that light power is controllable up and down, for the pump light source of different wave length, needs to design different
The parameters such as DBR periods, thickness.Realize the controllability of light power, upper direction light source is entered in 1064nm vertical cavities, as
Pump light realizes the lasing light extraction of 1064nm, and due to the effect of being all-trans of DBR under 1064nm, the light direction of 1064nm wavelength to
On.
Complete structure can be realized using an epitaxial process in this programme, reduces manufacture difficulty, improve device into
Product rate.One of which wavelength is to generate laser by optical pumping, without the injection of electric current, does not have higher heat and generates, and
There is higher beam quality.Optical pumping structure does not need to carry out PN type doping, improves laser epitaxial crystal quality.
Description of the drawings
Fig. 1 is a kind of integrated vertical cavity two-wavelength semiconductor laser structure chart.
Fig. 2 is the lower DBR transmissivities of 1064nm vertical cavities.
Fig. 3 is the vertical cavity semiconductor laser spectrograms of 980nm.
Fig. 4 is the lower DBR reflectivity of the vertical cavity semiconductor lasers of 980nm.
The overall reflectivity that Fig. 5 is DBR under DBR and 1064nm on 980nm.
Fig. 6 is light power above and below the vertical cavity semiconductor lasers of 980nm and general power.
Fig. 7 is the vertical cavity semiconductor laser spectrograms of 936nm.
Fig. 8 is DBR reflectance maps under the semiconductor laser of 936nm vertical cavities.
Fig. 9 is DBR overall reflectivities under DBR on 936nm and 1064nm.
Figure 10 is light power above and below the vertical cavity semiconductor lasers of 936nm and general power figure.
The pump light vertical cavity and DBR overall structures under 1064nm that Figure 11 is simulation.
Specific embodiment
The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, so that advantages and features of the invention energy
It is easier to be readily appreciated by one skilled in the art, so as to make a clearer definition of the protection scope of the present invention.
As shown in Figure 1, present embodiment discloses an epitaxial growth two-wavelength semiconductor laser, wrap successively from top to bottom
Include the vertical cavity, integrated pump light source vertical cavity, GaAs substrates of 1064nm, wherein the vertical cavity of 1064nm is from top to bottom successively
Including DBR speculums 3 under DBR speculums 1, the multi-quantum well active region 2 of 1064nm, 1064nm on 1064nm, pump light is integrated
The upper DBR speculums 4 including pump light vertical cavity, the multiple quantum wells of pump light vertical cavity are active successively from top to bottom for source vertical cavity
Area 5, the lower DBR speculums 6 of pump light vertical cavity.The number and constituent content of active area Quantum Well change, the DBR used for
GaAs/AlxGa1-xAs material systems optimize the number of DBR above and below pump light vertical cavity, change the reflectivity of DBR up and down, have
The raising emergent power of effect, and light power ratio can adjust as needed up and down.
Epitaxial growth two-wavelength semiconductor laser designing scheme, grows pump light successively using MOCVD
Vertical cavity structure and 1064nm vertical cavity structures, and carry out growth experiment, such as doping concentration, lift height according to design requirement
Component.Since two kinds of vertical cavities can be on gaas substrates by being once epitaxially-formed, so not needing to bonding technology mistake
Cheng Jinhang bondings are handled.Since upper vertical cavity is using optical pumping lasing, so 1064nm vertical cavities are not needed in the process of growth
It is doped, does not need to plated electrode, avoid electric current injection effect, the structure as shown in figure 1 above can be realized by the way of etching,
The lower part of entire device needs to include positive and negative electrode part, it is therefore desirable to go the external etching of 1064nm vertical cavity structures
It removes, in order to reduce etching depth, exposes a certain size step, to plate positive electrode in the part.By the P of pump light vertical cavity
Type electrode is plated on the lower DBR of 1064nm vertical cavities, needs to carry out p-type doping to the DBR thus,
Expose the lower DBR parts of 1064nm vertical cavities, the plated electrode by the way of magnetron sputtering uses GaAs substrates
Thinned method reduce thickness reduces resistance, improves light extraction efficiency.
In order to which the light for making lower vertical cavity outgoing passes through the lower DBR speculums of 1064nm, and enter 1064nm vertical cavities
In active area, the pump wavelength of use needs to meet particular value, such as 980nm, 958nm, 936nm.Because the transmission of the wavelength
Rate is more than 70%.As shown in Figure 2.
The following formula is pump light and excitation light power calculation formula.
Plaser=(Ppump-Pth)ηdiff (1)
ηdiff=ηoutηquantηabs (2)
PlaserFor lasing power, PthFor threshold pump power, RtopIt is upper DBR reflectivity, RbotIt is lower DBR reflectivity,
TlossIt is transmission factor, ηabsIt is pump absorption coefficient, λpumpIt is pump wavelength, λlaserIt is lasing optical wavelength.Work as pump power
More than threshold pump power, and pumping wavelength is less than excitation wavelength, meets conditions for lasing when providing enough transition energies.
Embodiment one
In the present embodiment, 980nm vertical cavities and 1064nm vertical cavities is respectively adopted in pump light vertical cavity, the vertical cavity that is excited
The integrated vertical cavity structure being combined, the vertical cavity of 980nm include two parts GaAs/Al0.9The DBR of GaAs, AlGaAs interval
Layer, InGaAs/GaAs Multiple-quantum active areas, oxidation limiting layer.The vertical cavity of 1064nm includes upper and lower two parts GaAs/
Al0.9The DBR of GaAs, AlGaAs wall, InGaAs/GaAs Multiple-quantum active areas, in order to make the vertical cavity upper and lower of 980nm
To light extraction simultaneously, therefore it is 22 pairs to design lower DBR, reflectivity 99.86%, consider the lower DBR of 1064nm vertical cavities for
The reflections affect of 980nm light, therefore when being simulated using Crosslight softwares, the lower DBR of 1064nm vertical cavities is added to mould
Intend in structure, as shown in figure 11, optimize the number of the upper DBR of 980nm vertical cavities, it is 17 pairs to determine the DBR numbers, makes two kinds
DBR overall reflectivities are 99.57%, as shown in figure 5, realizing the effect of light extraction up and down, upper and lower light power is as shown in Figure 6.
During driving current 140mA, upper direction light power is about 52mW.Lower direction light power about 17.4mW.Wherein upper direction
52mW power is the power entered in 1064nm vertical cavity active areas, for pumping the vertical cavity of 1064nm, generates outgoing side
To upward 1064nm excitation wavelengths.
Embodiment two
In the present embodiment, 936nm vertical cavities and 1064nm vertical cavities is respectively adopted in pump light vertical cavity, the vertical cavity that is excited
The integrated vertical cavity structure being combined, the vertical cavity of 936nm include two parts GaAs/Al0.9The DBR of GaAs, AlGaAs interval
Layer, InGaAs/GaAs Multiple-quantum active areas, oxidation limiting layer.The vertical cavity of 1064nm includes upper and lower two parts GaAs/
Al0.9The DBR of GaAs, wall, InGaAs/GaAs Multiple-quantum active areas, the DBR designed for the pump light source of different wave length
Logarithm is different, and in order to make 936nm vertical cavities upper and lower directions light extraction, therefore lower DBR numbers are designed as 21 pairs simultaneously, reflectivity is
99.835%, and consider reflections affects of the lower DBR for the light of 936nm of 1064nm vertical cavities, in simulation by 1064nm
The lower DBR of vertical cavity is also added in model configuration, as shown in figure 11.Optimize the number of DBR on 936nm, determine the DBR numbers
Mesh is 19 pairs, and two kinds of DBR overall reflectivities is made, as shown in figure 9, the effect of upper and lower light extraction can be generated, to go out up and down 99.74%
Luminous power is as shown in Figure 10, and in driving current 150mA, upper direction light power is about 52mW, and lower direction light power is about
13.5mW.Wherein upper direction light power 52mW is the power entered in 1064nm vertical cavity active areas, for pumping
The vertical cavity structure of 1064nm generates the upward 1064nm excitation wavelengths of exit direction.
This above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill of the art
For personnel, under the premise of not departing from the present invention, several improvements and modifications can also be made, these improvements and modifications should also be as
It is considered as protection scope of the present invention.
Claims (15)
1. an epitaxial growth two-wavelength semiconductor laser, it is characterized in that：Including pump light vertical cavity, the vertical cavity that is excited and
GaAs substrates, pumped vertical cavity generate the adjustable laser of upper and lower directions light power simultaneously, and the laser of upper direction outgoing is as pump
Pu light, which enters, to be excited in vertical cavity, and optical pumping is excited the lasing of vertical cavity, it is achieved thereby that integrated vertical cavity dual wavelength swashs
It penetrates so that dual-wavelength laser is emitted from the both direction up and down of integrated vertical cavity, and the collection pump light vertical cavity is excited vertically
Chamber is completed by an epitaxial growth on gaas substrates.
2. an epitaxial growth two-wavelength semiconductor laser according to claim 1, it is characterized in that：Be excited vertical cavity
Vertical cavity for 1064nm.
3. an epitaxial growth two-wavelength semiconductor laser according to claim 2, it is characterized in that：Wherein 1064nm's
Vertical cavity is included on 1064nm successively from top to bottom under DBR speculums (1), 1064nm multi-quantum well active regions (2), 1064nm
DBR speculums (3), the upper DBR speculums (4) including pump light vertical cavity, the pumping successively from top to bottom of pump light source vertical cavity
The multi-quantum well active region (5) of light vertical cavity, the lower DBR speculums (6) of pump light vertical cavity.
4. an epitaxial growth two-wavelength semiconductor laser according to claim 3, it is characterized in that：The wavelength of pump light
Meet the specific light transmission condition of DBR under 1064nm (3).
5. an epitaxial growth two-wavelength semiconductor laser according to claim 4, it is characterized in that：The wavelength of pump light
For：980nm, 958nm or 936nm.
6. an epitaxial growth two-wavelength semiconductor laser according to claim 3, it is characterized in that：Pump light vertical cavity
Active area (5) using InyGa1-yAs material systems, wherein 0.1<y<0.25.
7. an epitaxial growth two-wavelength semiconductor laser according to claim 3, it is characterized in that：Pump light is vertical
Chamber, the vertical cavity that is excited DBR have identical material system GaAs/AlxGa1-xAs, the Al groups in same dbr structure
Divide and be consistent, wherein 0.6<x<0.9.
8. an epitaxial growth two-wavelength semiconductor laser according to claim 3, it is characterized in that：Pump light vertical cavity
Active area (5) using multi-quantum pit structure, Quantum Well number x, 2<x<5.
9. an epitaxial growth two-wavelength semiconductor laser according to claim 3, it is characterized in that：Pump light it is upper
The reflectivity up and down of the lower DBR speculums (6) of DBR speculums (4) and pump light is more than 99.5%, in order to realize pump light
The reflectivity of upper and lower DBR speculums is identical, and the number of the upper and lower DBR speculums of pump light is consistent, to reach light power phase
Deng.
10. an epitaxial growth two-wavelength semiconductor laser according to claim 3, it is characterized in that：Pump light it is upper
The reflectivity up and down of the lower DBR speculums (6) of DBR speculums (4) and pump light is more than 99.5%, in order to realize the upper of pump light
DBR (4) reflectivity is more than lower DBR speculums (6) reflectivity of pump light, and the number of the upper DBR speculums (4) of pump light is more than
Lower DBR speculums (6) number of pump light, to reach upper direction light power less than lower direction.
11. an epitaxial growth two-wavelength semiconductor laser according to claim 3, it is characterized in that：Pump light it is upper
The reflectivity up and down of the lower DBR speculums (6) of DBR speculums (4) and pump light is more than 99.5%, in order to realize the upper of pump light
DBR (4) reflectivity is less than lower DBR speculums (6) reflectivity of pump light, and the number of the upper DBR speculums (4) of pump light is less than
Lower DBR speculums (6) number of pump light, to reach upper direction light power more than lower direction.
12. an epitaxial growth two-wavelength semiconductor laser according to claim 3, it is characterized in that：1064nm's hangs down
Upper DBR speculums (4) reflectivity that the reflectivity of the lower DBR speculums (6) of straight chamber is more than 99.9%, 1064nm vertical cavities is more than
99.5%.
13. an epitaxial growth two-wavelength semiconductor laser according to claim 3, it is characterized in that：1064nm volumes
Sub- trap active area (2) is using InxGa1-xAs material systems, wherein 0.30<x<0.32.
14. epitaxial growth double-wavelength semiconductor laser according to claim 3, it is characterized in that：1064nm Multiple-quantums
Trap active area (2) is using multi-quantum pit structure, Quantum Well number, x, and 2<x<5.
15. an epitaxial growth two-wavelength semiconductor laser according to claim 3, it is characterized in that：Pump light is vertical
The P-type electrode of chamber is plated under 1064nm on DBR speculums (3), and carries out p-type doping to DBR speculums (3) under 1064nm.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109524878A (en) * | 2018-12-05 | 2019-03-26 | 深亮智能技术（中山）有限公司 | A kind of vertical cavity surface emitting laser |
| WO2020155029A1 (en) * | 2019-01-31 | 2020-08-06 | 华为技术有限公司 | Semiconductor laser apparatus and manufacturing method therefor, and device |
| CN113764969A (en) * | 2021-09-08 | 2021-12-07 | 深圳市中科芯辰科技有限公司 | Silicon-based double-sided vertical cavity surface emitting laser and preparation method thereof |
| CN114300941A (en) * | 2021-12-30 | 2022-04-08 | 北京工业大学 | Spontaneous pulse type photon cascade semiconductor laser |
| CN114336283A (en) * | 2021-12-30 | 2022-04-12 | 北京工业大学 | Optical mode modulation photon cascade laser and preparation method thereof |
| CN115425520A (en) * | 2022-11-04 | 2022-12-02 | 中国科学院长春光学精密机械与物理研究所 | Dual-wavelength vertical cavity surface emitting semiconductor laser, optical device and preparation method |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109524878A (en) * | 2018-12-05 | 2019-03-26 | 深亮智能技术（中山）有限公司 | A kind of vertical cavity surface emitting laser |
| CN109524878B (en) * | 2018-12-05 | 2019-08-09 | 深亮智能技术（中山）有限公司 | A kind of vertical cavity surface emitting laser |
| WO2020155029A1 (en) * | 2019-01-31 | 2020-08-06 | 华为技术有限公司 | Semiconductor laser apparatus and manufacturing method therefor, and device |
| CN113764969A (en) * | 2021-09-08 | 2021-12-07 | 深圳市中科芯辰科技有限公司 | Silicon-based double-sided vertical cavity surface emitting laser and preparation method thereof |
| CN113764969B (en) * | 2021-09-08 | 2023-10-31 | 深圳市中科光芯半导体科技有限公司 | Silicon-based double-sided vertical cavity surface emitting laser and preparation method thereof |
| CN114300941A (en) * | 2021-12-30 | 2022-04-08 | 北京工业大学 | Spontaneous pulse type photon cascade semiconductor laser |
| CN114336283A (en) * | 2021-12-30 | 2022-04-12 | 北京工业大学 | Optical mode modulation photon cascade laser and preparation method thereof |
| CN115425520A (en) * | 2022-11-04 | 2022-12-02 | 中国科学院长春光学精密机械与物理研究所 | Dual-wavelength vertical cavity surface emitting semiconductor laser, optical device and preparation method |
| CN115425520B (en) * | 2022-11-04 | 2023-01-31 | 中国科学院长春光学精密机械与物理研究所 | Dual-wavelength vertical cavity surface emitting semiconductor laser, optical device and preparation method |
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Application publication date: 20180612 |