CN102709813A - Single chip vertical integrated multi-wavelength semiconductor laser and manufacturing method thereof - Google Patents
Single chip vertical integrated multi-wavelength semiconductor laser and manufacturing method thereof Download PDFInfo
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- CN102709813A CN102709813A CN2012101646712A CN201210164671A CN102709813A CN 102709813 A CN102709813 A CN 102709813A CN 2012101646712 A CN2012101646712 A CN 2012101646712A CN 201210164671 A CN201210164671 A CN 201210164671A CN 102709813 A CN102709813 A CN 102709813A
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Abstract
The invention discloses a single chip vertical integrated multi-wavelength semiconductor laser. The multi-wavelength semiconductor laser is prepared by epitaxial growth for once and a process, wherein a laser chip at least comprises two basic units; each unit is provided with an independent laser structure; the adjacent upper and lower basic units are separated by a high aluminium component AlxGa1-xAs layer; isolation oxide is generated by a AlxGa1-xAs wet oxidation method to electrically insulate the basic units; the structure of each basic unit of the chip in the vertical direction comprises a substrate region, a core region and an electrode region; the working wavelength of each basic unit can be a random wavelength in a wave band which can be implemented by a gallium arsenide-based laser; and the independent current injection and power output control can be carried out. According to the multi-wavelength semiconductor laser, single chips are vertically integrated on the same substrate; an integrated unit device is independently and electrically driven; and the single chip vertical integrated multi-wavelength semiconductor laser has the advantages of high integration level, controllable wavelength power, epitaxial growth for once, simple preparation process and the like.
Description
Technical field
The present invention relates to a kind of semiconductor laser, more specifically say, relate to vertical integrated multi-wavelength semiconductor laser of a kind of monolithic and manufacturing approach thereof.
Background technology
Dual wavelength or multi-wavelength semiconductor laser are widely used in fields such as communication, laser display, optical storage, medical treatment and scientific research; As can be used as the light source that reads CD Player and DVD player simultaneously; The multiwavelength laser therapeutic equipment, the medical optical imaging scanner of multiple wavelength simultaneous data acquisition for breast imaging etc.Existing multi-wavelength semiconductor laser, mainly realize through following several method: U.S. patent of invention US4577207 is disclosed through the p-n junction series connection method; Disclosed twice extension of Chinese invention patent 200410083363.2,200510106430.2,200610100361.9 and U.S. Pat 7045810B2 and US7706423B2 and its preparation process; There are to be exactly Chinese invention patent 200410061548.3 disclosed end plane metal-dielectric mirror methods etc. again.
Wherein, individual devices power can not independently be controlled by the decision of knot potential division in the p-n junction series connection method.Twice extension and its preparation process can be realized the independent control of individual devices power, and the integrated direction of device is along laterally, i.e. integrated two devices arranged side by side on substrate.According to this method, integrated number of wavelengths is decided by the epitaxial growth number of times, and integrated level is low, and the preparation difficulty is big, rate of finished products is low, cost is high.And end plane metal-dielectric mirror method is through different gains wavelength medium stack growth; End face plating medium and metallic mirror are realized the restriction of different wave length; This method is from laser physics angle, needs to consider the factor like aspects such as carrier confinement, light field restrictions, requires the gain media wavelength difference can not be too big; Power output is low, and is difficult to control.
So it is few to be badly in need of a kind of limiting factor at present, can independently control individual devices power, and the extension number of times is few, the simple multi-wavelength semiconductor laser of technology.
In addition on the one hand; There is a kind of side direction wet oxidation to generate method of alumina in the prior art; Specifically; It mainly is to utilize the high aluminium component compound in the steam more than 300 ℃, oxidation can take place, and product is main with aluminium oxide, and product has good electrical insulating property, excellent mechanical intensity and low-refraction.The side direction wet oxidation process is following: sideetching exposes the high aluminium component layer, place in the oxidation furnace, in be connected with the steam about 400 ℃; Inert gas (like nitrogen) is the steam carrier; Steam gets into the high aluminium component layer from sideways diffusion, and oxidation reaction takes place while spreading, and forms aluminium oxide and As at last.High aluminium component Al (x) As compound selective wet oxidation has been widely used in edge-emitting laser (Appl.Phys.Lett.; 58; 394,1991), asymmetric F-P modulator (ASFP), resonant cavity optical excitation diode (RC-LEDs) and planar laser with vertical cavity.In the manufacturing approach of planar laser with vertical cavity, this side direction wet oxidation generates method of alumina as preparation current-confining apertures (Electronics Letters, 31 (3), 208,1995; Appl.Phys.Lett.65 (21), 2717,1994), i.e. the peripheral oxidation of high aluminium component layer, inside keeps not oxidation, electric current only can be internally not oxide regions pass through.
Summary of the invention
The object of the present invention is to provide the vertical integrated multi-wavelength semiconductor laser of a kind of monolithic, can realize the independent control of wavelength and power, and vertical integrated multi-wavelength semiconductor laser of the simple monolithic of preparation technology and manufacturing approach thereof.
In order to realize above purpose of the present invention, technical scheme of the present invention is following:
The vertical integrated multi-wavelength semiconductor laser of a kind of monolithic comprises: heat abstractor and at least two elementary cells of being provided with successively on perpendicular to the substrate direction are provided with between two adjacent elementary cells and carry out the oxidation insulating layer that electricity is isolated; Each said elementary cell comprises:
Substrate zone is used for carrying the layers of material of elementary cell, and the substrate zone in the wherein undermost elementary cell links to each other with said heat abstractor;
Core space is used to the complete laser structure of realizing that a certain wavelength laser is launched;
Electrode district comprises positive electrode that links to each other with said core space and the negative electrode that links to each other with said substrate zone.
In such scheme, said substrate zone is a N type substrate zone, and its material is a N type heavy doping backing material.
In such scheme, the material of said substrate zone is specially GaAs or InP.
In such scheme, said core space comprises according to epitaxially grown order successively: N type limiting layer, N type ducting layer, active layer, P type ducting layer, P type limiting layer and P type cap rock.
In such scheme, the epitaxial material of said core space is any one perhaps several kinds in the semi-conducting materials such as GaAs, AlGaAs, InAs, InGaAs, GaInP, GaInAsP, AlGaInP.
In such scheme, the material of said active layer is any one perhaps several kinds in body material, heterojunction, SQW, quantum wire, quantum dot and the quanta cascade structure.
In such scheme, said positive electrode is connected on the P type cap rock of core space; Said negative electrode is connected on the N type substrate zone.
A kind of manufacturing approach of multi-wavelength semiconductor laser may further comprise the steps:
Step 1: confirm that according to the number n of laser wavelength the number of elementary cell is n, the number of oxidation insulating layer is n-1, and n is the natural number greater than 1;
Step 2: according to the order of elementary cell-high aluminium component district-elementary cell, n elementary cell of epitaxial growth successively and n-1 high aluminium component district at interval;
Step 3: on the core space of each elementary cell and substrate zone, prepare electric current respectively and inject window, and come out in the side in high aluminium component district;
Step 4: through the side direction wet oxidation process, the district is oxidized to oxidation insulating layer high aluminium component;
Step 5: at the lateral growth dielectric insulating film of elementary cell; Form positive and negative electrode respectively at the core space of each elementary cell and the reserved location of substrate zone;
Step 6: the substrate zone to the orlop elementary cell carries out attenuate and polishing, carries out dissociating of multi-wavelength semiconductor laser chip according to demand;
Step 7: the substrate zone welding of the orlop elementary cell of the multi-wavelength semiconductor laser chip that obtains of will dissociating is encapsulated on the heat abstractor, and through bonding wire the positive and negative electrode of each elementary cell is connected respectively to power supply.
In such scheme, the material in said high aluminium component district is any one perhaps several kinds among AlAs, AlGaAs, AlInAs and the AlAsSb.
Can find out from such scheme, beneficial effect of the present invention can be summarized as following some:
1, the vertical integrated multi-wavelength semiconductor laser of monolithic of the present invention; Carrying out electricity through oxidation insulating layer between each elementary cell isolates; So there is not the phase mutual interference between each wave band; And each elementary cell can be controlled respectively through independent power supply, can carry out the independent control of operation wavelength and power output, is beneficial to the accurate control and the output of high-power laser that realize wavelength.
2, the vertical integrated multi-wavelength semiconductor laser of monolithic of the present invention can be epitaxially grown in a plurality of elementary cells with different operating wavelength on the same substrate.Only need an extension in the manufacture process, preparation method and semiconductor technology are compatible, are beneficial to the integrated of device; Each device is independent, can realize the independent control of wavelength and power; Wavelength control is accurate, selectivity good; Size can be controlled flexibly, is beneficial to the realization high power.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is carried out further detailed explanation.
Fig. 1 is a kind of embodiment of the vertical integrated multi-wavelength semiconductor laser of monolithic of the present invention, the structural representation of the epitaxial wafer in manufacture process;
Fig. 2 is in the embodiment shown in Figure 1, the structural representation of multi-wavelength semiconductor laser;
Fig. 3 is in the embodiment shown in Figure 1, multi-wavelength semiconductor laser preparation method's schematic flow sheet.
Fig. 4 has shown that wavelength is respectively the structural representation of the two-wavelength semiconductor laser of 650nm, 780nm in another embodiment of the present invention.
Embodiment
The vertical integrated multi-wavelength semiconductor laser of monolithic of the present invention, it prepares through an epitaxial growth and semiconductor technology, comprises heat abstractor and chip of laser two parts.Chip of laser comprises two elementary cells at least; Each unit has independently laser structure; By gain media be positioned at the total reflection ducting layer of its low-refraction P type up and down and constitute with the doping of N type, between the adjacent upper and lower elementary cell by high aluminium component layer (Al arranged
XGa
1-XThe As layer, Al>95%) separate, this structure is suitable for the laser of GaAs substrate, by an epitaxial growth.A plurality of elementary cells are passed through Al
XGa
1-XThe oxidation insulating layer that As selectivity wet oxidation process forms is as the electric current trapping layer.The operation wavelength of each elementary cell of chip can be the same or different, and span lengths can be very big, covers all the GaAs base laser wavelength from 0.6 micron to 1.7 micron wavebands.Vertical stratification in the elementary cell comprises: substrate zone, core space, electrode district.
The vertical integrated multi-wavelength semiconductor laser of monolithic of the present invention, the insulating properties of its insulation layer is realized by aluminium oxide.Aluminium oxide is (like AlAs, Al through the high aluminium component compound
XGa
1-XAs (x>0.95), AlInAs, AlAsSb etc.) the side direction wet oxidation process generates aluminium oxide and realizes.Oxidation all can take place in the high aluminium component compound in the steam more than 300 ℃, product is main with aluminium oxide, has good electrical insulating property, excellent mechanical intensity and low-refraction.The side direction wet oxidation process is specific as follows: sideetching exposes the high aluminium component layer, place in the oxidation furnace, in be connected with the steam about 400 ℃; Inert gas (like nitrogen) is the steam carrier; Steam gets into the high aluminium component layer from sideways diffusion, and oxidation reaction takes place while spreading, and obtains aluminium oxide and As.At last, the high aluminium component layer has formed alumina layer through peroxidating.
The vertical integrated multi-wavelength semiconductor laser of monolithic of the present invention, the electrode district of same elementary cell, its positive electrode are connected on the P type cap rock of core space, and negative electrode is connected on the N type substrate zone.The positive and negative electrode of each elementary cell can be connected in same control power supply, also can connect different power supplys respectively, thereby the electric current injection of each elementary cell is controlled separately.
The vertical integrated multi-wavelength semiconductor laser of monolithic of the present invention, its preparation process is following:
1, confirms chip material and carries out structural design that according to wavelength number (is that n considers according to the wavelength number), confirm the number n-1 of elementary cell n and insulation layer in the chip, wherein n is the natural number greater than 1 according to the wave-length coverage of multiple-wavelength laser.
2, according to selected material and structure epitaxial growth successively: substrate zone 1, core space 1, high aluminium component district 1, substrate zone 2, core space 2, high aluminium component district 2, substrate zone 3, core space 3, high aluminium component district 3 ..., substrate zone n, core space n.Wherein, core space 1, core space 2, core space 3 ..., core space n concrete structure comprise respectively: N type limiting layer, N type ducting layer, active layer, P type ducting layer, P type limiting layer, P type cap rock.
3, the epitaxial wafer of multiple-wavelength laser; Through standard photolithography process, chemical corrosion or dry etching; N, n-1 ..., 3,2,1 elementary cells core space and substrate zone on; Prepare electric current respectively and inject window, and make high aluminium component district 1, high aluminium component district 2, high aluminium component district 3 ..., high aluminium component district n the side come out.
4, through the side direction wet oxidation process, high aluminium component district 1, high aluminium component district 2, high aluminium component district 3 ..., high aluminium component district n, be oxidized to AlO respectively
XOxidation insulating layer 1, oxidation insulating layer 2, oxidation insulating layer 3 ..., oxidation insulating layer n.
5, growth dielectric insulating film and metal film, core space 1, core space 2, core space 3 ..., core space n connects positive electrode respectively; Substrate zone 1, substrate zone 2, substrate zone 3 ..., substrate zone n connects negative pole respectively, dielectric insulating film can be SiO
2, material such as SiN, metal film can be materials such as Au/Ge/Ni, Ti/Pt/Au.
6, to orlop N type substrate 1 attenuate and polishing, and according to demand and the chip size epitaxial wafer that dissociates.
7, the multi-wavelength semiconductor laser chips welding accomplished of preparation is encapsulated on the heat abstractor, and through bonding wire the positive and negative electrode of each elementary cell is connected to identical or different power supply.
Need to prove; Substrate zone 1 in the above-mentioned preparation process, core space 1, high aluminium component district 1 be meant respectively perpendicular on the substrate direction, according to the high aluminium component district between substrate zone in the 1st elementary cell of sedimentary sequence, core space and the 1st elementary cell and the 2nd elementary cell.Similarly, for example substrate zone n-1, core space n-1, high aluminium component district n-1 then are according to the high aluminium component district between the substrate zone in n-1 the elementary cell of sedimentary sequence, core space and n-1 elementary cell and n the elementary cell.
Below in conjunction with reference to accompanying drawing embodiments of the invention being carried out detailed description, scope of the present invention is not limited to following examples.
Fig. 1 to 3 has shown a kind of embodiment of the present invention.Fig. 1 is the structural representation that is used for making after the epitaxial wafer epitaxial growth of multi-wavelength semiconductor laser chip.This multi-wavelength semiconductor laser has three kinds of operation wavelength λ
1, λ
2, λ
3, therefore have three elementary cells and two insulation layers.Be followed successively by from bottom to up according to the epitaxial growth order: substrate zone 101, core space 102, high aluminium component district 103, substrate zone 104, core space 105, high aluminium component district 106, substrate zone 107 and core space 108.Wherein the excitation wavelength of core space 102, core space 105 and core space 108 is respectively λ
1, λ
2, λ
3The basic structure of core space 102, core space 105 and core space 108 is followed successively by according to the epitaxial growth order from top to bottom: N type limiting layer, N type ducting layer, active layer, P type ducting layer, P type limiting layer, P type cap rock.
Fig. 2 is after epitaxial wafer preparation shown in Figure 1 is accomplished, again through steps such as chemical wet etching, somatomedin film, attenuated polishing, cleavage scribing, preparation electrode, the structural representation of resulting multi-wavelength semiconductor laser chip.Insulating medium layer 201 can be SiO
2, material such as SiN, metallic dielectric layer 202 can be materials such as Au/Ge/Ni, Ti/Pt/Au.Operation wavelength is λ
1The positive electrode 203 of the elementary cell of below be connected to core space 102, negative electrode 204 is connected to substrate zone 101, and positive electrode 203 is connected on the same control power supply with negative electrode 204.Similarly, operation wavelength is λ
2Elementary cell positive electrode 205 be connected to core space 105, negative electrode 206 is connected to substrate zone 104, positive electrode 205 is connected on the same control power supply with negative electrode 206; Operation wavelength is λ
3The positive electrode 207 of elementary cell of the top be connected to core space 108, negative electrode 208 is connected to substrate zone 107, positive electrode 207 is connected on the same control power supply with negative electrode 208.The multi-wavelength semiconductor laser chip that preparation is accomplished is packaged on the heat abstractor 209 through scolder.
The manufacturing approach of the vertical integrated multi-wavelength semiconductor laser of monolithic of the present invention is as shown in Figure 3:
Step 301: wave-length coverage as required, select chip of laser material, structure and elementary cell number, the vertical integrated multi-wavelength semiconductor laser of the monolithic in the present embodiment is the three-wavelength device, it comprises three elementary cells and two oxidation insulating layers.
Step 302: the epitaxial structure according to multi-wavelength semiconductor laser shown in Figure 1 carries out the material growth.
Step 303: according to device architecture shown in Figure 2,, prepare electrode window through ray, and side, high aluminium component district is exposed in the air through photoetching process, chemical corrosion or dry etching.
Step 304:, make the high aluminium component district be oxidized to AlO through the side direction wet oxidation process
XInsulating barrier is as oxidation insulating layer.
Step 305: according to the described device architecture of Fig. 2, growth dielectric insulating film and metal film, chemical wet etching prepares positive and negative electrode respectively.
Step 306: attenuate N type substrate 101, and carry out the chip cleavage according to chip size and needs.
Step 307: the chip of laser welding is packaged on the heat abstractor, and is connected in the positive and negative electrode of each elementary cell on the different power supplys that can control separately through bonding wire.
In other a kind of embodiment, the vertical integrated multi-wavelength semiconductor laser of monolithic of the present invention is a kind of two-wavelength semiconductor laser.As shown in Figure 4, the operation wavelength of this two-wavelength semiconductor laser is respectively 650nm, 780nm, and it is a kind ofly both can read the CD with relatively low packing density, can read the light source of the player of the DVD with relative high data density again.Not shown insulating medium layer and metallic dielectric layer among Fig. 4.
Operation wavelength is that the elementary cell of 780nm is a substrate 401 with N type heavy doping GaAs, and core space 402 is the GaInP/AlGaInP material system.Operation wavelength is that the elementary cell of 650nm is a substrate 404 with N type heavy doping GaAs, and core space 405 is the GaAs/AlGaAs material system.High aluminium component district 403 is Al
XGaAs (x=0.98) obtains oxidation insulating layer through the side direction wet oxidation process, i.e. AlO
XLayer.The positive electrode 406 of wavelength 780nm, negative electrode 407 and positive electrode 408, negative electrode 409 are connected independent control power supply respectively; Injection current to 780nm and two elementary cells of 650nm is controlled separately, thereby reaches the purpose that operation wavelength and power are controlled respectively.
Obviously, the foregoing description only be for explanation clearly done for example, and be not qualification to execution mode.For the those of ordinary skill in affiliated field, on the basis of above-mentioned explanation, can also make other multi-form variation or change.Here need not also can't give exhaustive to all execution modes.And conspicuous variation of being extended out thus or change still are among the protection range of the invention.
Claims (9)
1. the vertical integrated multi-wavelength semiconductor laser of monolithic is characterized in that, comprising: heat abstractor and at least two elementary cells of being provided with successively on perpendicular to the substrate direction are provided with between two adjacent elementary cells and carry out the oxidation insulating layer that electricity is isolated; Each said elementary cell comprises:
Substrate zone is used for carrying the layers of material of elementary cell, and the substrate zone in the wherein undermost elementary cell links to each other with said heat abstractor;
Core space is used to the complete laser structure of realizing that a certain wavelength laser is launched;
Electrode district comprises positive electrode that links to each other with said core space and the negative electrode that links to each other with said substrate zone.
2. multi-wavelength semiconductor laser according to claim 1 is characterized in that, said substrate zone is a N type substrate zone, and its material is a N type heavy doping backing material.
3. multi-wavelength semiconductor laser according to claim 2 is characterized in that the material of said substrate zone is specially GaAs or InP.
4. according to claim 2 or 3 described multi-wavelength semiconductor lasers, it is characterized in that said core space comprises according to epitaxially grown order successively: N type limiting layer, N type ducting layer, active layer, P type ducting layer, P type limiting layer and P type cap rock.
5. multi-wavelength semiconductor laser according to claim 4 is characterized in that, the epitaxial material of said core space is any one perhaps several kinds in the semi-conducting materials such as GaAs, AlGaAs, InAs, InGaAs, GaInP, GaInAsP, AlGaInP.
6. multi-wavelength semiconductor laser according to claim 4 is characterized in that, the material of said active layer is any one perhaps several kinds in body material, heterojunction, SQW, quantum wire, quantum dot and the quanta cascade structure.
7. multi-wavelength semiconductor laser according to claim 4 is characterized in that, said positive electrode is connected on the P type cap rock of core space; Said negative electrode is connected on the N type substrate zone.
8. the manufacturing approach of the described multi-wavelength semiconductor laser of claim 1 is characterized in that, may further comprise the steps:
Step 1: confirm that according to the number n of laser wavelength the number of elementary cell is n, the number of oxidation insulating layer is n-1, and n is the natural number greater than 1;
Step 2: according to the order of elementary cell-high aluminium component layer-elementary cell, n elementary cell of epitaxial growth successively and n-1 high aluminium component district at interval;
Step 3: on the core space of each elementary cell and substrate zone, prepare electric current respectively and inject window, and come out in the side in high aluminium component district;
Step 4: through the side direction wet oxidation process, the district is oxidized to oxidation insulating layer high aluminium component;
Step 5: at the lateral growth dielectric insulating film of elementary cell; Form positive and negative electrode respectively at the core space of each elementary cell and the reserved location of substrate zone;
Step 6: the substrate zone to the orlop elementary cell carries out attenuate and polishing, carries out dissociating of multi-wavelength semiconductor laser chip according to demand;
Step 7: the substrate zone welding of the orlop elementary cell of the multi-wavelength semiconductor laser chip that obtains of will dissociating is encapsulated on the heat abstractor, and through bonding wire the positive and negative electrode of each elementary cell is connected respectively to power supply.
9. manufacturing approach according to claim 8 is characterized in that, the material of said high aluminium component layer is any one perhaps several kinds among AlAs, AlGaAs, AlInAs and the AlAsSb.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105700072A (en) * | 2014-11-24 | 2016-06-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | Optical waveguide, manufacturing method thereof, and method for reducing scattering loss of side wall of V-III semiconductor waveguide |
| CN107069433A (en) * | 2017-06-20 | 2017-08-18 | 中国科学院半导体研究所 | GaN base ultraviolet laser wafer, chip of laser and laser and preparation method thereof |
| CN107749563A (en) * | 2017-11-16 | 2018-03-02 | 太原理工大学 | Single-slice integrated semiconductor accidental laser based on directional scatter |
| CN108155561A (en) * | 2018-01-22 | 2018-06-12 | 长春理工大学 | Epitaxial growth two-wavelength semiconductor laser |
| CN111276867A (en) * | 2018-12-05 | 2020-06-12 | 中国科学院半导体研究所 | Monolithic integrated dual wavelength semiconductor laser and preparation method thereof |
| WO2020155029A1 (en) * | 2019-01-31 | 2020-08-06 | 华为技术有限公司 | Semiconductor laser apparatus and manufacturing method therefor, and device |
| CN115425520A (en) * | 2022-11-04 | 2022-12-02 | 中国科学院长春光学精密机械与物理研究所 | Dual-wavelength vertical cavity surface emitting semiconductor laser, optical device and preparation method |
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|---|---|---|---|---|
| CN105700072A (en) * | 2014-11-24 | 2016-06-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | Optical waveguide, manufacturing method thereof, and method for reducing scattering loss of side wall of V-III semiconductor waveguide |
| CN107069433A (en) * | 2017-06-20 | 2017-08-18 | 中国科学院半导体研究所 | GaN base ultraviolet laser wafer, chip of laser and laser and preparation method thereof |
| CN107749563A (en) * | 2017-11-16 | 2018-03-02 | 太原理工大学 | Single-slice integrated semiconductor accidental laser based on directional scatter |
| CN108155561A (en) * | 2018-01-22 | 2018-06-12 | 长春理工大学 | Epitaxial growth two-wavelength semiconductor laser |
| CN111276867A (en) * | 2018-12-05 | 2020-06-12 | 中国科学院半导体研究所 | Monolithic integrated dual wavelength semiconductor laser and preparation method thereof |
| CN111276867B (en) * | 2018-12-05 | 2021-01-29 | 中国科学院半导体研究所 | Monolithic integrated dual wavelength semiconductor laser and preparation method thereof |
| WO2020155029A1 (en) * | 2019-01-31 | 2020-08-06 | 华为技术有限公司 | Semiconductor laser apparatus and manufacturing method therefor, and device |
| CN111903022A (en) * | 2019-01-31 | 2020-11-06 | 华为技术有限公司 | Semiconductor laser device and manufacturing method and equipment thereof |
| CN115425520A (en) * | 2022-11-04 | 2022-12-02 | 中国科学院长春光学精密机械与物理研究所 | Dual-wavelength vertical cavity surface emitting semiconductor laser, optical device and preparation method |
| CN115425520B (en) * | 2022-11-04 | 2023-01-31 | 中国科学院长春光学精密机械与物理研究所 | Dual-wavelength vertical cavity surface emitting semiconductor laser, optical device and preparation method |
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Application publication date: 20121003 |