CN111903022A

CN111903022A - Semiconductor laser device and manufacturing method and equipment thereof

Info

Publication number: CN111903022A
Application number: CN201980022251.0A
Authority: CN
Inventors: 任正良; 黄利新; 操日祥
Original assignee: Huawei Technologies Co Ltd
Current assignee: Huawei Technologies Co Ltd
Priority date: 2019-01-31
Filing date: 2019-01-31
Publication date: 2020-11-06
Also published as: WO2020155029A1

Abstract

A semiconductor laser device and its manufacturing method and equipment. The semiconductor laser device includes: a first laser and a second laser, the first laser and the second laser are attached to the same substrate layer; between the n-electrode of the first laser and the n-electrode of the second laser are independent of each other, and the p-electrode of the first laser and the p-electrode of the second laser are independent of each other; when the first signal is added to the electrode of the first laser, the The generated current forms a first current channel, and when a second signal is added to the electrode of the second laser, the current generated in the second laser forms a second current channel, and the first signal has an effect on the first laser. The modulation and the modulation of the second laser by the second signal are independent of each other; the second laser includes a cover layer, and the cover layer is used to realize the relationship between the first current channel and the second current channel. isolation from each other.

Description

PCT国内申请，说明书已公开。PCT domestic application, the description has been published.

Claims

A semiconductor laser device, comprising: a first laser and a second laser, wherein,

the first laser and the second laser are attached to the same substrate layer;

the n-electrode of the first laser and the n-electrode of the second laser are independent of each other, and the p-electrode of the first laser and the p-electrode of the second laser are independent of each other;

when a first signal is added to an electrode of the first laser, a current generated in the first laser forms a first current channel, when a second signal is added to an electrode of the second laser, a current generated in the second laser forms a second current channel, and the modulation of the first laser by the first signal and the modulation of the second laser by the second signal are independent of each other;

the second laser includes a cap layer for achieving mutual isolation between the first current path and the second current path.
The semiconductor laser device according to claim 1, wherein the first laser comprises: a first n-electrode and a first p-electrode;

the second laser includes: a second n-electrode and a second p-electrode;

the first signal is injected from the first p-electrode to the first laser and output from the first n-electrode;

the second signal is injected from the second p-electrode to the second laser and output from the second n-electrode.
The semiconductor laser device according to claim 2, wherein the first laser further comprises: the first n electrode and the first p electrode are positioned at two ends of the first epitaxial region;

the second laser further comprises: a second epitaxial region, the second n-electrode and the second p-electrode being located at both ends of the second epitaxial region; the second n-electrode, the second p-electrode and the second epitaxial region are located on the same side of the cap layer;

the first epitaxial region and the second epitaxial region are isolated from each other through the cover layer, and the first epitaxial region and the second epitaxial region are located on two sides of the cover layer.
A semiconductor laser device as claimed in claim 3, wherein the first epitaxial region comprises: a first quantum well; the second epitaxial region includes: a second quantum well, the first quantum well and the second quantum well being formed by the same epitaxial growth;

the first quantum well, the first p-electrode, the second n-electrode, the second quantum well, the second p-electrode, and the cap layer are all located above the substrate layer;

the first n electrode is positioned below the substrate layer;

the first p-electrode is positioned above the first quantum well;

the cap layer is located between the first quantum well and the second quantum well;

the second n-electrode is positioned below the second quantum well, and the second p-electrode is positioned above the second quantum well;

the first p-electrode and the second n-electrode are separated by the capping layer;

the first p-electrode and the second p-electrode are separated by the cover layer and the second quantum well.
The semiconductor laser device of claim 4, wherein the first epitaxial region further comprises: a first lower separation limiting layer, a first upper separation limiting layer; the second epitaxial region further comprises: a second lower separation limiting layer, a second upper separation limiting layer; wherein,

the first lower separation confinement layer is located between the substrate layer and the first quantum well;

the first upper separation confinement layer is located above the first quantum well and below the cap layer;

the second lower separation confinement layer is located between the cap layer and the second quantum well;

the second upper separation confinement layer is located above the second quantum well.
The semiconductor laser device of claim 5, wherein the first epitaxial region further comprises: a first grating layer; the second epitaxial region further comprises: a second grating layer; wherein,

a first grating is manufactured on the first grating layer, and a second grating is manufactured on the second grating layer;

the first grating layer is positioned above the first upper separation limiting layer;

the second grating layer is positioned above the second upper separation limiting layer;

the cover layer is located above the first grating layer.
The semiconductor laser device of claim 6, wherein the first epitaxial region further comprises: a first contact layer, the first contact layer comprising: a first ridge waveguide;

the second epitaxial region further comprises: a second contact layer, the second contact layer comprising: a second ridge waveguide;

the first contact layer is located between the first grating layer and the first p-electrode;

the second contact layer is located between the second grating layer and the second p-electrode.
The semiconductor laser device of claim 7, wherein the first epitaxial region further comprises: a first silicon dioxide layer; the second epitaxial region further comprises: a second silicon dioxide layer; wherein,

the first silicon dioxide layer is positioned on the end face of the first ridge waveguide and is positioned between the first grating layer and the first p electrode;

the second silicon dioxide layer is located on an end face of the second ridge waveguide, and the second silicon dioxide layer is located between the second grating layer and the second p-electrode.
The semiconductor laser device according to claim 7, wherein the first ridge waveguide and the second ridge waveguide have the same thickness;

the lowest plane where the first ridge waveguide is located is lower than the lowest plane where the second ridge waveguide is located.
A semiconductor laser device as claimed in any one of claims 1 to 9, characterized in that the first laser and the second laser are arranged side by side on the substrate layer.
A semiconductor laser device as claimed in any one of claims 1 to 10, characterized in that the second laser is superimposed on the first laser and the first laser is arranged on the substrate layer.
A multi-wavelength laser, comprising: a semiconductor laser device as claimed in any one of claims 1 to 10.
A semiconductor chip, comprising: a semiconductor laser device as claimed in any one of claims 1 to 10.
A light module, characterized in that the light module comprises: a semiconductor laser device as claimed in any one of claims 1 to 10.
An optical line terminal, characterized in that the optical line terminal comprises: a light module as claimed in claim 14.
An optical network unit, comprising: the optical module of claim 14.
A method of manufacturing a semiconductor laser device, the method comprising:

respectively manufacturing a first laser and a second laser on the same substrate layer, wherein the second laser comprises a cover layer, and a first current channel of the first laser and a second current channel of the second laser are isolated from each other through the cover layer;

the first laser and the second laser are provided with n-electrodes that are independent of each other, and the first laser and the second laser are provided with p-electrodes that are independent of each other.
The method of claim 17, wherein fabricating the first laser and the second laser on the same substrate layer, respectively, comprises:

carry out epitaxy for the first time on the front of substrate layer, through epitaxial growth goes out first epitaxial structure for the first time, first epitaxial structure is from up including following hierarchical structure down: the laser comprises a first epitaxial region, a cover layer and a second epitaxial region, wherein the first epitaxial region belongs to the first laser, and the second epitaxial region belongs to the second laser;

carrying out selective etching on the left side surface and the right side surface of the first epitaxial structure to obtain a second epitaxial structure;

and carrying out selective etching on the right side surface of the second epitaxial structure to obtain a third epitaxial structure, wherein the cover layer on the right side surface of the third epitaxial structure is etched, and the cover layer is reserved on the left side surface of the third epitaxial structure.
The method of claim 18, wherein configuring the first laser and the second laser with n-electrodes and the first laser and the second laser with p-electrodes independent of each other comprises:

manufacturing a first p electrode above the first epitaxial region;

manufacturing a second p electrode above the second epitaxial region;

manufacturing a second n electrode on the cover layer on the left side surface of the third epitaxial structure, wherein the second n electrode and the second p electrode belong to the second laser;

and thinning the back surface of the substrate layer, and manufacturing a first n electrode on the back surface of the substrate layer, wherein the first n electrode and the first p electrode belong to the first laser.
The method of claim 19, wherein said performing a first epitaxy on the front side of the substrate layer by which a first epitaxial structure is grown further comprises:

carrying out first epitaxial growth on the front surface of the substrate layer to respectively grow a first lower separation limiting layer, a first quantum well, a first upper separation limiting layer, a first grating layer, the cover layer, a second lower separation limiting layer, a second quantum well, a second upper separation limiting layer and a second grating layer; wherein,

the first lower separation confinement layer, the first quantum well, the first upper separation confinement layer and the first grating layer all belong to the first epitaxial region;

the second lower confinement layer, the second quantum well, the second upper confinement layer, and the second grating layer all belong to the second epitaxial region.