CN101588019B - External cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device - Google Patents
External cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device Download PDFInfo
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- CN101588019B CN101588019B CN200910087714XA CN200910087714A CN101588019B CN 101588019 B CN101588019 B CN 101588019B CN 200910087714X A CN200910087714X A CN 200910087714XA CN 200910087714 A CN200910087714 A CN 200910087714A CN 101588019 B CN101588019 B CN 101588019B
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Abstract
An external cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device belongs to the semiconductor photoelectron field. The common oxidation limiting vertical cavity surface transmission semiconductor laser device has problems of small single pass light gain, multiple-transverse module laser shooting, low single module output power, large threshold current and large series resistance and so on. The invention adopts the multiple-active region structure on the active region of the device, meanwhile leads the defect type photon crystal structure into DBR on the vertical cavity surface transmission semiconductor laser device, the external cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device with dozens of micrometres of single module operation oxidation bore diameter, dozens of mws of single module power, dozens of Ohms of series resistances and more than 35 dbs of side module inhibition can be obtained by optimizing the photon crystal period, the air bore diameter, the etching depth, the device diameter and the oxidation bore diameter and so on reasonably.
Description
Technical field
The invention belongs to the photoelectron technology field, specifically is the design and fabrication about a kind of new vertical cavity-face emitting semiconductor laser.(650nm, 850nm, the 980nm etc.) vertical-cavity-face emitting semiconductor laser that is suitable for the multi-wavelength.
Background technology
(vertical cavity surface emittinglasers VCSELS) is a kind of semiconductor laser of excellent performance to vertical-cavity-face emitting semiconductor laser.VCSELS has with optical coupling efficiency high, is prone to form two-dimensional array and integrated; Low threshold value, single longitudinal mode, modulating speed is high; Characteristics such as reliability and cost performance height.In high density face battle array; Optical-fiber network; There is good application prospects aspects such as transfer of data, optical interconnection, optical storage, photometry calculation; And, be used widely in the free space optical interconnection between LAN and computer motherboard etc. in optical communication local network data communication, short distance optical interconnection, transfer of data.
Traditional vertical-cavity-face emitting semiconductor laser structure is mainly obtained through molecular beam epitaxy (MBE) or the technological extension of metallochemistry vapour deposition (MOCVD) by III-V compound semiconductor material.Obtain traditional vertical cavity surface emission through semiconductor technology and move laser device to.Its basic structure (is example with wavelength 850nmGaAs/AlGaAs) as shown in Figure 1: go up metal electrode (P type metal electrode) 1; P type ohmic contact layer 2; The last distribution Bragg reflector of cycle alternating growth (going up DBR) 3; Al
0.98Ga
0.02The oxidation limiting layer 4 of As high aluminium component; Single active area 5; The following distribution Bragg reflector of cycle alternating growth (following DBR) 6; Substrate 7; N type metal electrode 8; Oxidation hole 9; Light hole 10.Be generally individual devices or array structure.Generally there is following shortcoming in this kind laser: 1, the gain of light of common vertical-cavity-face emitting semiconductor laser one way is little, and for improving power output, the general employing increases lighting area or increase the method that electric current injects.Adopt to increase the distribution variation that the lighting area method can make the active area carrier density, the center current density diminishes, and makes threshold current increase; When adopting big electric current to inject, spatial hole burning can appear in the charge carrier distribution of active area, has influence on the distribution of gain and refractive index, how horizontal module lasing occurs.In addition, under the big electric current injection situation, the thermal stability variation of device.2, for realizing single mode operation, must make the carrier density distribution of active area core more even, lighting area is difficult to realize single mode operation too greatly.Be the single mode output that guarantees that VCSEL is stable, oxide-aperture must be below 5 μ m.3, less oxidation hole must cause big series resistance, makes little oxidation hole and on technology, is difficult to control.The single mode power output is low, and threshold current is big.
Summary of the invention
The objective of the invention is to overcome above prior art shortcoming, design and make the semiconductor vertical cavity face emitting semiconductor laser of a kind of high-gain, low threshold current, little series resistance, high single mode power output.Mainly include source layer structure, photonic crystal cycle, air aperture, etching depth, device diameter, oxide-aperture etc. owing to influence the device parameters of photon crystal vertical cavity face emitting semiconductor laser.
External cavity type multiple-active region photon crystal vertical cavity face emitting semiconductor laser of the present invention is characterised in that:
Be followed successively by from bottom to up: backplate, substrate, DBR, the multiple-active-region that constitutes by a plurality of single active area of reverse tunnel knot cascade down; Oxidation limiting layer, oxidation limiting layer center are that oxide-aperture is the oxidation hole of 10-30 μ m; Last DBR; P type ohmic contact layer; Last metal electrode;
On the etching among the DBR 1-3 micron produce the deficiency photon crystal structure; The cycle of deficiency photon crystal structure is a 1-7 micron, and duty ratio is less than 0.7; Photonic crystal defect cavity 13 is that 0.5-5 micron airport surrounds by at least 3 circle apertures.
The present invention has adopted multiple-active-region 14 structures on the active area structure of device.Utilize the grown epitaxial wafer of external cavity type multiple-active region photon crystal vertical cavity face emitting semiconductor laser of MOCVD or MBE growth technology.Concrete manufacture craft is following: DBR6 under growth on the substrate 7.Growth is through the multiple-active-region 14 of a plurality of single active area formation of reverse tunnel assistant warden couplet then; Al
0.98Ga
0.02As oxidation limiting layer 4; Last DBR3; The epitaxial material of the multiple-active region photon crystal vertical cavity face emitting semiconductor laser of P type ohmic contact layer 2.
Multiple-active-region 14 is incorporated in the photon crystal vertical cavity face emitting semiconductor laser can reach higher optical output power when less injection current, the problem of the beam quality variation that has caused when having avoided big injection current.Problems such as the gain of common photonic crystal vertical-cavity-face emitting semiconductor laser is low have been solved.
Owing to introduced photon crystal structure in the present invention, the mode confinement function in the oxidation hole 9 of device is replaced by deficiency photon crystal 12, and the restriction electric current that mainly act as in oxidation hole 9 injects.In order to improve the single mode power output of device, need to increase the aperture in oxidation hole 9, greater than the single transverse mode restrictive condition of general VCSEL 5 μ m, and need not consider that its excitation mode distributes.Simultaneously,, otherwise can reduce the uniformity that charge carrier injects, increase threshold current and operating current, be unfavorable for model selection because it is also unsuitable excessive to receive charge carrier diffusion influence oxide-aperture.So when making the external cavity type vertical-cavity-face emitting semiconductor laser, making the aperture in oxidation hole 9 is the large oxide-aperture external cavity type vertical-cavity-face emitting semiconductor laser of 10-30 μ m.
The present invention realizes multiple active area vertical chamber face emitting semiconductor laser mode confinement is realized single mode output through in external cavity type multiple active area vertical chamber face emitting semiconductor laser, introducing deficiency photon crystal structure 12.Deficiency photon crystal structure 12 is mainly in last DBR3.Such structure and solid light photonic crystal fiber are just different, and the pattern of device work is relevant with etching depth.At first,, want when the less airport 11 of etching that fully it is carved the top and be carved into the existing technology in bottom and be difficult to accomplish, can increase non-radiation recombination after etching into multiple-active-region 14 simultaneously because the chip thickness that is used to be made into is about 8 microns.So usually about etching depth 1-3 micron.When etching depth was 1.2 microns, corresponding different cycle deficiency photon crystal 1s 2 were as long as its duty ratio (photonic crystal holes 11 diameters and photonic crystal periodic ratio) just satisfies single mode condition less than 0.7.And be 3 microns device for etching depth, the duty ratio of device can not be greater than 0.5.Therefore rationally the selection that littler perturbation will help pattern is more introduced in the light engraving erosion, certainly in practical devices is made, also must consider the change of device temperature drift refractive index, generally speaking, its influence to the influence of effective refractive index about 0.01.So the etching depth of photonic crystal can not be too shallow, the too shallow meeting of etching depth makes the effect of photonic crystal covered by the normal working temperature drift effect.Usually etching depth is at the 1-3 micron.
For photonic crystal cycle (distances between two airports, 11 centers) and since dimensional effect when duty ratio less than 0.5 the time, can satisfy the single transverse mode condition in the photonic crystal waveguide structure.So in order to obtain high-power output, make things convenient for technology to make simultaneously, adopt the big as far as possible photonic crystal cycle.Yet; Also must consider the influence of thermal effect to the material refractive index in the practical devices, by absorbed, temperature outside is higher relatively because of laser resonance in the device central area; Internal-external temperature difference causes the material refringence to produce; In order to make the pattern of photonic crystal modulation in the device can not receive the influence of temperature drift, the effective refractive index difference of photonic crystal region and bright dipping defective hole must overcome this temperature drift so, and the brilliant refringence of photon is along with the cycle increase and diminish.In order to prevent that photonic crystal fallen into oblivion by thermal effect the pattern mudulation effect, the cycle of photonic crystal is as far as possible little.Comprehensive above consideration the present invention is several microns multiple photonic crystal periodic structure in the cycle of having adopted.
Simultaneously, when reducing the diameter of airport 11, conduction mode can whole move to low frequency, and the high-order guided wave mode is limited, and can't in photonic crystal defect cavity 13 waveguides, propagate.So when duty ratio diminished, the pattern in the guided wave band obviously reduced, only have only fundamental transverse mode in 13 waveguides of photonic crystal list defect cavity, to transmit.At this moment; With the defect cavity 13 of photonic crystal light hole 10 as VCSEL; Still can form single-mode oscillation when diameter is very big swashs and to penetrate. because photonic crystal has been realized the transverse mode selection; The oxide-aperture of decision power output also can not receive the restriction of model selection, only needs to regulate electric current separately and injects.Because the diffusion of the electric current of external cavity type photonic crystal multiple active area vertical chamber face emitting semiconductor laser will be passed through deficiency photon crystal 12 and last DBR3, so it can introduce non-radiation recombination, the diameter of airport 11 will receive electric current and inject restriction.The diameter of airport 11 can not be too little, and the person can't not swash and penetrate.Airport 11 photonic crystals of aperture have been made from the 0.2-3.5 micron.
Row's number through testing the outer air hole 11 of finding photonic crystal defect cavity 13 is many more; Restriction to light is good more, and along with the increase of duty ratio, the light that is leaked to outside the photonic crystal defect cavity 13 is few more; When duty ratio one timing, leakage is arranged the increase of numbers along with airport 11 and is reduced.The number of turns that realizes single mode limit air hole 11 needs 3 circles at least.
Compared with prior art, the present invention has the following advantages
1, the oxidation hole 9 of single mode operation can be increased to tens microns from original several microns, has greatly reduced the series resistance of device, thereby has improved the thermal stability of device, and device has longer useful life.
2, realized that how active vertical optical coupling combines with photonic crystal single mode transport characteristic; Light-emitting area under the single mode operation state increases; The power of oxidation restricted type that the single mode power ratio is common and common photon crystal vertical cavity face emitting semiconductor laser is big, obtains low threshold value single-mode high-power output.
3, stronger antijamming capability, higher transmission speed, (greater than the side mode suppression ratio of 35DB) more narrow linewidth, stronger modulating characteristic, simultaneously through using asymmetric photon crystal structure can control the polarization direction of laser.
4 and can be transplanted in the development of other wavelength VCSEL fully.
Description of drawings
Below in conjunction with accompanying drawing and embodiment to further explain of the present invention
Last metal electrode (P type metal electrode) 1; P type ohmic contact layer 2; The last distribution Bragg reflector of cycle alternating growth (going up DBR) 3; Al
0.98Ga
0.02As oxidation limiting layer 4; Single active area 5; The following distribution Bragg reflector of cycle alternating growth (following DBR) 6; Substrate 7; N type metal electrode 8; Oxidation hole 9; Light hole 10; 11; Deficiency photon crystal 12 photonic crystal defect cavity 13, multiple-active-region 14.
Fig. 1, oxidation restricted type vertical-cavity-face emitting semiconductor laser
Fig. 2, external cavity type multiple-active region photon crystal vertical cavity face emitting semiconductor laser
Fig. 3, external cavity type multiple-active region photon crystal vertical cavity face emitting semiconductor laser vertical view
Embodiment (is example with wavelength 850nm)
1, through at N
+On the type GaAs substrate growth obtain substrate 7 utilize the MOCVD method successively on substrate the growth 0.3 micron the GaAs resilient coating and then the growth N
+Al
0.1Ga
0.9As (60nm doping content 3 * 10
18Cm
-3) and n
+Al
0.9Ga
0.1As (68.19nm doping content 3 * 10
17Cm
-3) following DBR6, the In in 28 cycles constituting
0.18Al
0.12Ga
0.7As and Al
0.22Ga
0.78Single active area 5 that AS forms is through heavily doped N
+GaAs and P
+Multiple-active-region (three active areas) 14, Al that GaAs reverse tunnel assistant warden joins
0.98Ga
0.02As (30nm doping content 1 * 10
18Cm
-3) oxidation limiting layer 4,, Al
0.1Ga
0.9As (60nm doping content 3 * 10
18Cm
-3) and Al
0.9Ga
0.1As (68.19nm doping content 3 * 10
18Cm
-3) last DBR3, the Al in 24 cycles of constituting
0.1Ga
0.9The heavily doped ohmic contact layer 2 of As.
2, utilize the manufacture craft of traditional restricted vertical-cavity-face emitting semiconductor laser of oxidation to produce the restricted vertical-cavity-face emitting semiconductor semi-finished product of the multiple-active-region oxidation chip of the P electrode 1 of table top 65-75 micron, light hole 10 aperture 40-50 microns, oxide-aperture 10-30 micron, 500 nanometer TiAu (do not make attenuate, the sputter backplate is conciliate separating process) again
3, will put into the SiO of chemical vapor deposition (PECVD) densification about sample surfaces deposit one layer thickness 300 nanometers with the sample of acetone and absolute ethyl alcohol and the clean oven dry of deionized water in proper order
2Oxide-film.
4 and then in deposit SiO
2Last layer Zep520 electron beam adhesive is got rid of on the surface of oxide-film, preceding baking post bake, again with sample put into electron beam exposure apparatus exposure, develop, the back baking obtains required figure on glue.The cycle of photonic crystal is from the 1-7 micron in the figure.Duty ratio from the aperture of 0.1-0.5 airport from 500 nanometers to 5 micron.(figure such as Fig. 3 on the glue)
5, etch away not protected SiO with induction coupling ion etching (ICP)
2Oxide-film, remove photoresist.Figure transfer on the glue is arrived SiO
2On the oxide-film.(SiO
2Last figure such as Fig. 3)
6, will have SiO
2The sample of mask is put into etching in the vacuum chamber of responding to coupling ion etching (ICP).Etching depth 1-3 micron is used SiO with the sample after the etching
2Corrosive liquid floats surperficial remaining SiO
2Mask.
7, be thinned to about 100 microns, sputter backplate 8 (backplate AuGeNiAu thickness 300nm), alloy, dissociate, pressure welding.Just can obtain needed laser.
8, test
Through using spectroanalysis instrument test period is that 7 microns duty ratios are that 1.5 microns single defective external cavity type multiple-active region photon crystal vertical cavity face emitting semiconductor lasers of etching depth of 0.2 find that its spectral line widths are 0.2 nanometer, side mode suppression ratio 45dB.Use NFM to observe its hot spot characteristic and show that it is single mode.With its single mode power of laser test system test 3.5mW.50 ohm of threshold current 4.4mA series resistances.
Cycle is that 7 microns duty ratios are that 3 microns single defective external cavity type multiple-active region photon crystal vertical cavity face emitting semiconductor lasers of 0.4 etching depth find that its spectral line widths are 0.3 nanometer, 52 ohm of side mode suppression ratio 35dB, single mode power 3.3mW, threshold current 3.8mA, series resistance.
Cycle is that 5 microns duty ratios are that 1.5 microns single defective external cavity type multiple-active region photon crystal vertical cavity face emitting semiconductor lasers of 0.2 etching depth find that its spectral line widths are 0.3 nanometer, side mode suppression ratio 40DB.Single mode power 3.2mW.73 ohm of threshold current 3.8mA, series resistances.
Cycle is that 5 microns duty ratios are that 2.0 microns single defective external cavity type multiple-active region photon crystal vertical cavity face emitting semiconductor lasers of 0.5 etching depth find that its spectral line widths are 0.6 nanometer, side mode suppression ratio 40DB.Single mode power 3.0mW.45 ohm of threshold current 3.3mA, series resistances.
Cycle is that 1 micron duty ratio is that 1 micron single defective external cavity type multiple-active region photon crystal vertical cavity face emitting semiconductor laser of 0.5 etching depth finds that its spectral line width is 0.6 nanometer, side mode suppression ratio 45DB.Single mode power 0.5mW.193 ohm of threshold current 0.8mA, series resistances.
Cycle is that 1 micron duty ratio is that 1.2 microns single defective external cavity type multiple-active region photon crystal vertical cavity face emitting semiconductor lasers of 0.7 etching depth find that its spectral line widths are 0.5 nanometer, 94 ohm of side mode suppression ratio 40DB, single mode power 1.0mW, threshold current 0.5mA, series resistance.
Claims (1)
1. external cavity type multiple-active region photon crystal vertical cavity face emitting semiconductor laser is characterized in that:
Be followed successively by from bottom to up: backplate, substrate, DBR, the multiple-active-region that constitutes by a plurality of single active area of reverse tunnel knot cascade down; Oxidation limiting layer, oxidation limiting layer center are that oxide-aperture is the oxidation hole of 10-30 μ m; Last DBR; P type ohmic contact layer; Last metal electrode;
On the etching among the DBR 1-3 micron produce the deficiency photon crystal structure; The cycle of deficiency photon crystal structure is a 1-7 micron, and duty ratio is less than 0.7; Photonic crystal defect cavity (13) is that 0.5-5 micron airport surrounds by at least 3 circle apertures.
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|---|---|---|---|
| CN200910087714XA CN101588019B (en) | 2009-06-19 | 2009-06-19 | External cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910087714XA CN101588019B (en) | 2009-06-19 | 2009-06-19 | External cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device |
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| CN101588019B true CN101588019B (en) | 2012-05-23 |
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| CN102623890A (en) * | 2012-03-27 | 2012-08-01 | 北京工业大学 | Porous defect matching type photonic crystal surface emitting laser |
| CN102611001A (en) * | 2012-03-27 | 2012-07-25 | 北京工业大学 | Method for optimizing photonic crystal surface emitting laser |
| CN107833868B (en) * | 2017-11-02 | 2020-01-31 | 中国工程物理研究院流体物理研究所 | Optical refrigeration integrated circuit system based on periodic dielectric structure |
| US11695093B2 (en) | 2018-11-21 | 2023-07-04 | Analog Devices, Inc. | Superlattice photodetector/light emitting diode |
| CN109921283B (en) * | 2019-02-01 | 2020-11-10 | 苏州长光华芯光电技术有限公司 | Semiconductor device and preparation method |
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