CN102611001A - Method for optimizing photonic crystal surface emitting laser - Google Patents
Method for optimizing photonic crystal surface emitting laser Download PDFInfo
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- CN102611001A CN102611001A CN2012100848365A CN201210084836A CN102611001A CN 102611001 A CN102611001 A CN 102611001A CN 2012100848365 A CN2012100848365 A CN 2012100848365A CN 201210084836 A CN201210084836 A CN 201210084836A CN 102611001 A CN102611001 A CN 102611001A
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Abstract
The invention relates to a method for optimizing photonic crystal surface emitting laser, belonging to the technical field of the semiconductor optoelectronics. In the method, an oxidized aperture and a photonic crystal defect aperture are horizontally matched and coupled on the basis of transverse coupling of an oxidation restricted type surface emitting laser and a two-dimensional photonic crystal. By the optimization of the relationship of the oxidized aperture and the photonic crystal defect aperture, the device whose oxidized aperture is greater than the photonic crystal defect aperture by one photonic crystal air hole diameter is prepared to allow the device to work in low threshold current, small series resistance and high single-mode output power state. According to the invention, the method can be applied to oxidation limit photonic crystal surface emitting lasers of different materials and cannot be influenced by the wavelength range.
Description
Technical field
The present invention relates to a kind of new method of optimizing the photon crystal-face transmitting laser performance; Particularly a kind of based on the oxide-aperture on oxidation restricted type surface-emitting laser and 2 D photon crystal lateral basis and the new method that the photonic crystal defect aperture vertically is coupled and matees; This method can be applicable to the oxidation restricted type photon crystal-face transmitting laser of various types of materials, belongs to field of semiconductor photoelectron technique.
Background technology
Vertical cavity surface emitting laser (VCSEL) have low threshold current, dynamically single longitudinal mode operation, small divergence angle, cylindrical symmetric beam, high modulation bandwidth, be easy to advantages such as two dimension is integrated, be widely used in fields such as optical communication, optical storage and light demonstration.Common oxidation restricted type vertical-cavity-face emitting semiconductor laser material is mainly obtained through molecular beam epitaxy (MBE) or the technological extension of metallochemistry vapour deposition (MOCVD) by III-V compound semiconductor material.Obtain the surface-emitting laser device through semiconductor technology, its basic structure is as shown in Figure 1.Common is singulated dies and array structure.In plurality of applications, need device to be operated in the single-mode high-power state; Yet common oxidation restricted type surface-emitting laser will be realized single mode operation; Must make the carrier density distribution of active area core more even, just can make device realize single mode operation so the diameter in general oxidation hole is less than 5 μ m.So little oxidation bore dia must cause big series resistance.Very big series resistance will inevitably produce the thermal stability variation that a lot of heats make device simultaneously.Simultaneously, make so little oxidation bore dia and be difficult on technology realize that little oxidation bore dia makes that also efficient lighting area reduces that the single mode power output is low.
It is one of method that realizes the high-power surface-emitting laser of single mode that photon crystal structure is incorporated into surface-emitting laser (through etching defect type photonic crystal airport on the speculum of surface-emitting laser).And technology of preparing is simple relatively, is easy to be transplanted to various material systems.At present; What restrict the photon crystal-face transmitting laser performance has threshold current excessive; Luminous efficiency is crossed factors such as low; It mainly is because the non-radiation that the etching injury of photonic crystal brings meets to reveal with scattering loss etc. with photonic crystal holes institute generation pattern causes, wherein the most important thing is the excessive high price pattern in injection current zone sharp penetrate to swash penetrate, most of energy all loses with other forms.
In order to overcome the above problem of photon crystal-face transmitting laser, we utilize oxide-aperture and the photonic crystal defect aperture matching scheme that vertically is coupled successfully to solve above problem.
Summary of the invention
The objective of the invention is to overcome the technical disadvantages of above existing photon crystal-face transmitting laser, design and make the surface-emitting laser of a kind of low threshold current, little series resistance, high single mode power output.
A kind of optimization photon crystal-face transmitting laser method; Said laser structure is followed successively by metal electrode, P type ohmic contact layer, the last distribution Bragg reflector of cycle alternating growth, oxidation limiting layer, active area; Following distribution Bragg reflector, substrate, N type metal electrode, oxidation hole, light hole, photonic crystal airport, the photonic crystal defect hole;
It is characterized in that: the diameter in oxidation hole is than the diameter b of the big photonic crystal airport of diameter in photonic crystal defect hole, i.e. D=d+b.
We know the threshold current I of surface-emitting laser
ThConfirm by following formula:
Wherein D is the diameter in oxidation hole 9, J
ThIt is current density.In certain scope, need only and guarantee J
ThConstant, the diameter D that dwindles oxidation hole 9 is a kind of device threshold method of current that effectively reduces.Photon crystal-face transmitting laser is realized through etching defect type photonic crystal airport 11 on distribution Bragg reflector 3 on the oxidation restricted type surface-emitting laser.The diameter D in oxidation hole 9 is one of topmost factor of decision oxidation restricted type photon crystal-face transmitting laser threshold current equally.Penetrate the diameter d decision of power but swash simultaneously by photonic crystal defect hole 13; Usually select bigger oxidation hole 9 diameter D (being the diameter d of oxidation hole 9 diameter D) for use, the restriction of light is obtained single mode, high power output to guarantee photonic crystal much larger than photonic crystal defect hole 13.But in practical application, require device to have lower threshold current, require to take the oxidation hole 9 diameter D that try one's best little; And be the power that keeps big, then require to take photonic crystal defect hole 13 diameter d of trying one's best big.The key of the device of the low threshold value single-mode high-power of preparation is the rational Match coupling in this oxidation hole 9 and photonic crystal defect hole 13.When the diameter D in the direct d in photonic crystal defect hole 13 and oxidation hole 9 near the time, the mode characteristic of device not only receives the modulation of two-dimensional defect type photon crystal structure 12, also will receive the influence of oxidation limiting layer 4 simultaneously.Have only through the relation between rational matching photonic crystal defect hole 13 and the oxidation hole 9 and just can prepare high performance photon crystal-face transmitting laser.
In the pattern problem of analyzing the photonic crystal face emitting semiconductor laser, we take into account the effect in oxidation limiting layer 4 and oxidation hole 9, utilize the 3D-FDTD method to simulate.Can obtain different mode corresponding modal loss and light distribution through sunykatuib analysis.The relation that has obtained the diameter D in photonic crystal defect hole 13 diameter d and oxidation hole 9 is D-d/b >=1 (b is the diameter of photonic crystal airport 11), and device can be operated under the single mode state.Can know that through above analysis when the diameter in the oxidation hole 9 of device during than the diameter b of the big photonic crystal airport 11 of diameter in photonic crystal defect hole 13, device can be realized single mode operation, i.e. D=d+b.This moment, device had best oxidation hole 9 and photonic crystal defect hole 13 matching conditions; Both improved the ratio that single basic mode accounts for whole excitation mode power output; Simultaneously the higher order mode of device is suppressed, makes device be operated in low threshold current and single-mode high-power state.
Compared with prior art, the present invention has the following advantages
1, preparation technology is simple, does not need complicated process conditions, on the extension chip of common business-like surface-emitting laser, just can realize the high-power and low threshold value work of single mode of device simultaneously.
2, the coupling coupled structure can effectively reduce the device threshold electric current and increase single mode and goes out luminous power, and the heating that reduces device makes device have stronger antijamming capability, higher transmission speed, (more than tens decibels side mode suppression ratio) more narrow linewidth, stronger modulating characteristic.
3, be applicable in the various wavelength photo crystal surface-emitting lasers and various structure photon crystal-face transmitting laser.(mainly comprising tetragonal, triangular crystal lattice, tetragonal structure porous defective, triangular crystal lattice porous defective and elliptical aperture structure photon crystal-face transmitting laser)
Description of drawings
Below in conjunction with accompanying drawing and embodiment to further explain of the present invention
Last metal electrode (P type metal electrode) 1; P type ohmic contact layer 2; The last distribution Bragg reflector of cycle alternating growth (going up DBR) 3; Al
0.98Ga
0.02As oxidation limiting layer 4; Active area 5, following distribution Bragg reflector (following DBR) 6; Substrate 7; N type metal electrode 8; Oxidation hole 9; Light hole 10; Photonic crystal airport 11; Deficiency photon crystal structure 12 (comprising 11 and 13); Photonic crystal defect hole 13.
Fig. 1, oxidation restricted type surface emitting laser structure sketch map.
Fig. 2, photon crystal-face transmitting laser oxidation hole and photonic crystal defect hole coupling device structural representation.
Fig. 3, oxidation hole and photonic crystal defect hole coupling device front elevation.
Fig. 4, oxidation hole and photonic crystal defect hole coupling device 3 dimensional drawing.
Embodiment
We have adopted following method to prepare device in order to verify design.Selection has the epitaxial wafer of structure, prepares oxidation hole 9 through the semiconductor technology of routine and satisfies the oxidation restricted type surface-emitting laser that matees coupling condition with photonic crystal defect hole 13.Cleavage, pressure welding, test.The device that discovery device threshold current ratio is not adopted the coupling coupling has reduced a magnitude, and single basic mode power ratio does not adopt device to increase by 30%.Verified the feasibility of our schemes.
(with wavelength 850nm, it is that 1 micron seven apertures in the human head defect sturcture is an example with photonic crystal airport diameter that 2.5 microns single hole defectives of photonic crystal lattice cycle 5 microns photonic crystal airports diameter and photonic crystal cycle are 2 microns)
Through at N
+Extension Al on the GaAs substrate 7
0.1Ga
0.9As (60nm doping content 3 * 10
18Cm
-3) and n
+Al
0.9Ga
0.1As (68.19nm doping content 3 * 10
17Cm
-3) following DBR6, GaAs and the Al in 28 cycles constituting
0.3Ga
0.7The active area 5Al that AS forms
0.98Ga
0.02As (30nm doping content 1 * 10
18Cm
-3) oxidation limiting layer 4, P
+The Al that mixes
0.1Ga
0.9As (60nm) and Al
0.9Ga
0.1Last DBR3, the Al in 24 cycles that As (68.19nm) alternating growth constitutes
0.1Ga
0.9The heavily doped ohmic contact layer 2 of As utilizes the manufacture craft of traditional restricted vertical-cavity-face emitting semiconductor laser of oxidation to produce 65 microns of table tops, 40 microns in light hole 10 apertures, oxidation hole 9 and is the oxidation restricted type surface-emitting laser chip of the P electrode 1 of 7-15 micron, 500 nanometer TiAu (do not make attenuate, the sputter backplate is conciliate separating process).With putting into the SiO of chemical vapor deposition (PECVD) densification about sample surfaces deposit one layer thickness 300 nanometers with the sample of acetone and absolute ethyl alcohol and the clean oven dry of deionized water in proper order
2Oxide-film.And then in deposit SiO
2Last layer Zep520 electron beam adhesive is got rid of on the surface of oxide-film, preceding baking, electron beam exposure, development, back baking.The diameter that the cycle of obtaining is respectively 5 microns, 2 microns and photonic crystal airport is respectively the photonic crystal pattern of 2.5 microns and 1 micron.Etch away not protected SiO with reactive ion etching (RIE)
2Oxide-film, remove photoresist.Figure transfer on the glue is arrived SiO
2On the oxide-film.To have SiO
2The sample of mask is put into etching in the vacuum chamber of responding to coupling ion etching (ICP-RIE).2 microns of etching depths are used SiO with the sample after the etching
2Corrosive liquid floats surperficial remaining SiO
2Mask.Be thinned to about 100 microns, sputter backplate 8 (backplate AuGeNiAu thickness 300nm), alloy, dissociate, pressure welding.Just can obtain needed laser.
The photon crystal-face transmitting laser of device is found in test
For the cycle be 5 microns with 2.5 microns single hole defect sturctures of photonic crystal airport diameter
When device equaled 10 microns at oxide-aperture 9, when both having satisfied the coupling coupling condition, device can realize that single mode operation has minimum threshold current and maximum single mode power simultaneously.When the diameter in oxidation hole during greater than 10 microns, though can be operated in the single mode state, the device threshold electric current sharply increases, single mode power output and stability decreases.When the diameter of device threshold electric current in the oxidation hole is 15 microns, increase a nearly one magnitude 10 microns the time than oxide-aperture.At device below 10 microns, device can't be operated in the single mode state for the diameter in oxidation hole.
For the cycle be 2 microns with 2 microns seven apertures in the human head defect sturctures of photonic crystal airport diameter
When device equaled 8 microns at the oxidation bore dia, device can realize that single mode operation has minimum threshold current and maximum single mode power simultaneously.When the diameter in oxidation hole during greater than 8 microns, though can be operated in the single mode state, the device threshold electric current sharply increases, single mode power output and stability decreases.The device threshold electric current increases nearly 15 times than oxide-aperture 8 microns the time when 15 microns of oxide-apertures.At the device below 8 microns, device can't be operated in the single mode state for the oxidation bore dia.
Claims (1)
1. optimize the photon crystal-face transmitting laser method for one kind; Said laser structure is followed successively by metal electrode, P type ohmic contact layer, the last distribution Bragg reflector of cycle alternating growth, oxidation limiting layer, active area, following distribution Bragg reflector, substrate, N type metal electrode, oxidation hole, light hole, photonic crystal airport; The photonic crystal defect hole;
It is characterized in that: the diameter in oxidation hole is than the diameter b of the big photonic crystal airport of diameter in photonic crystal defect hole, i.e. D=d+b.
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| CN2012100848365A CN102611001A (en) | 2012-03-27 | 2012-03-27 | Method for optimizing photonic crystal surface emitting laser |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109861078A (en) * | 2019-04-02 | 2019-06-07 | 中国科学院长春光学精密机械与物理研究所 | A kind of surface-emitting laser and a kind of surface emitting laser array |
| CN112189288A (en) * | 2018-05-11 | 2021-01-05 | 加利福尼亚大学董事会 | Vertical cavity surface emitting device with buried index guiding current confinement layer |
| CN114512897A (en) * | 2020-11-17 | 2022-05-17 | 山东华光光电子股份有限公司 | Wide-strip-shaped high-power semiconductor laser for inhibiting lateral lasing through lateral absorption region and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6696308B1 (en) * | 2000-10-27 | 2004-02-24 | Chan-Long Shieh | Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication |
| CN101588019A (en) * | 2009-06-19 | 2009-11-25 | 北京工业大学 | External cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device |
| CN101975554A (en) * | 2010-09-29 | 2011-02-16 | 北京工业大学 | Current-limitation aperture measuring method of non-destructive surface-emitting semiconductor laser |
-
2012
- 2012-03-27 CN CN2012100848365A patent/CN102611001A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6696308B1 (en) * | 2000-10-27 | 2004-02-24 | Chan-Long Shieh | Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication |
| CN101588019A (en) * | 2009-06-19 | 2009-11-25 | 北京工业大学 | External cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device |
| CN101975554A (en) * | 2010-09-29 | 2011-02-16 | 北京工业大学 | Current-limitation aperture measuring method of non-destructive surface-emitting semiconductor laser |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112189288A (en) * | 2018-05-11 | 2021-01-05 | 加利福尼亚大学董事会 | Vertical cavity surface emitting device with buried index guiding current confinement layer |
| CN109861078A (en) * | 2019-04-02 | 2019-06-07 | 中国科学院长春光学精密机械与物理研究所 | A kind of surface-emitting laser and a kind of surface emitting laser array |
| CN109861078B (en) * | 2019-04-02 | 2021-01-05 | 中国科学院长春光学精密机械与物理研究所 | Surface emitting laser and surface emitting laser array |
| CN114512897A (en) * | 2020-11-17 | 2022-05-17 | 山东华光光电子股份有限公司 | Wide-strip-shaped high-power semiconductor laser for inhibiting lateral lasing through lateral absorption region and preparation method thereof |
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Application publication date: 20120725 |