CN106961071A - A kind of semiconductor optical amplifier led based on ridged active area smooth sea - Google Patents
A kind of semiconductor optical amplifier led based on ridged active area smooth sea Download PDFInfo
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- CN106961071A CN106961071A CN201710287611.2A CN201710287611A CN106961071A CN 106961071 A CN106961071 A CN 106961071A CN 201710287611 A CN201710287611 A CN 201710287611A CN 106961071 A CN106961071 A CN 106961071A
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- active area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
Abstract
The invention discloses a kind of semiconductor optical amplifier led based on ridged active area smooth sea, including active layer, and the upper ducting layer and lower waveguide layer of active layer upper and lower surface are grown on respectively, the difference of the refractive index of active layer and upper ducting layer or the refractive index of lower waveguide layer is less than or equal to threshold value so that basic mode strong laser field diffuses to the lower waveguide layer from active layer.Active area has restriction effect with waveguide section specific refractivity to light field, and influence optical field distribution, therefore, by limiting the refractive index of active layer and the difference of the upper ducting layer or the refractive index of the lower waveguide layer in threshold value, so that the size of the light field restriction factor of active layer is limited, smooth sea is formed to lead, the distribution of active layer distribution of light intensity is no longer maximum, the field distribution of basic mode high light diffuses to upper ducting layer and lower waveguide layer by original active layer, form large scale fundamental mode spot, improve saturation output power and beam quality, it is simple with technique, performance is stable, the advantage of low cost.
Description
Technical field
The present invention relates to semiconductor optical amplifier technical field, it is more particularly to a kind of led based on ridged active area smooth sea half
Conductor image intensifer.
Background technology
Semiconductor optical amplifier is made up of active area and passive region, and active area is gain region, using semi-conducting material manufacturing,
The principle of semiconductor optical amplifier depends primarily on the dielectric property of active layer and the characteristic of laser cavity.Specifically, in incident light
In the presence of son, active area stimulated radiation produces light amplification.In recent years, with the development of science and technology, semiconductor optical amplifier has one
Serial advantage, such as low in energy consumption, length flexible is big, and size is small, lightweight, and electro-optical efficiency is high and is easy to partly lead with other
Body opto-electronic device single-chip integration etc..At present, FSO, human gingival fibroblasts ranging and imaging, sampling are trembled with low
All it is badly in need of the semiconductor optical amplifier that 1.55 mu m waveband saturation output powers exceed 1W in the fields such as dynamic lock film laser.
However, the size of the ridge portion image intensifer of conventional single-mode is small, active area light restriction factor is big, limitation
Its power output is about 100mW, and small mode sizes need to match input and output single-mode fiber with lens, add envelope
The complexity of dress.In order to increase the saturation output power of semiconductor optical amplifier, it is necessary to increase mode volume, reduction differential increases
Benefit, reduces carrier lifetime, reduces waveguide loss, and light field restriction factor is reduced by optimizing active area structure.Therefore, existing skill
Propose semiconductor optical amplifier doing tapered amplification region again in art, high saturation output work is obtained by increasing active area width
Rate, but this structure meeting parasitism goes out higher order mode, it is impossible to single mode is realized, and its facular model is still difficult to and single-mode fiber
Size matches.
Therefore, high saturation output power, large scale single mode hot spot, high light beam quality, and manufacturing process letter how to be developed
Single, performance is stable, the semiconductor optical amplifier of low cost is the anxious technical issues that need to address of those skilled in the art.
The content of the invention
It is an object of the invention to provide a kind of semiconductor optical amplifier led based on ridged active area smooth sea, with high saturation
Power output, large scale single mode hot spot, high light beam quality, and manufacturing process is simple, performance is stable, low cost the characteristics of.
In order to solve the above technical problems, the present invention provides a kind of semiconductor optical amplification led based on ridged active area smooth sea
Device, including active layer, and the upper ducting layer and lower waveguide layer of the active layer upper and lower surface are grown on respectively, it is described
The difference of the refractive index of active layer and the upper ducting layer or the refractive index of the lower waveguide layer is less than or equal to threshold value, makes
Obtain basic mode strong laser field and diffuse to the upper ducting layer and the lower waveguide layer from the active layer.
It is preferred that, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, the scope of the threshold value is
0-3%.
It is preferred that, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, the active layer includes：
Non-impurity-doped potential well grows the MQW constituted with non-impurity-doped potential barrier cycle staggering；
It is grown on the non-impurity-doped boundary layer of the MQW upper surface and lower surface.
It is preferred that, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, the non-impurity-doped boundary layer
Thickness range be 5nm-50nm.
It is preferred that, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, also include：
Waveguide top covering, including the p-type doping upper limiting layer of the upper ducting layer upper surface is grown on, and it is grown on institute
The upper cushion of p-type doping of upper limiting layer upper surface is stated, the refractive index of the upper cushion of p-type doping is less than or equal to described
The refractive index of p-type doping upper limiting layer.
It is preferred that, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, also include：
Waveguide under-clad layer, including the n-type doping lower limit layer of the lower waveguide layer lower surface is grown on, and it is grown on institute
The n-type doping bottom breaker of lower limit layer lower surface is stated, the refractive index of the n-type doping bottom breaker is less than or equal to described
The refractive index of n-type doping lower limit layer.
It is preferred that, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, also include：
The electricity for the p-type heavy doping being arranged between the waveguide top covering upper surface and P faces electrode of metal lower surface
Pole contact layer.
It is preferred that, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, also include：
It is covered in the upper surface for the plane domain being made up of the upper ducting layer, and the waveguide top covering and described
The insulating barrier for the rib region upper surface that electrode contact layer segment is constituted, the thickness range of the insulating barrier is 100nm-300nm.
It is preferred that, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, also include：
The highly doped substrate of N-type of the waveguide under-clad layer lower surface is arranged at, and is arranged at the highly doped substrate of the N-type
The N faces lower metal electrode of lower surface.
It is preferred that, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, front/rear end is coated with reflection
Rate is less than 0.01% anti-reflection film.
A kind of semiconductor optical amplifier led based on ridged active area smooth sea provided by the present invention, including active layer, and
The upper ducting layer and lower waveguide layer of the active layer upper and lower surface, the refractive index of the active layer and institute are grown on respectively
The difference for stating the refractive index of ducting layer or the lower waveguide layer is less than or equal to threshold value so that basic mode strong laser field is from described
Active layer diffuses to the upper ducting layer and the lower waveguide layer.Because active area and waveguide section specific refractivity have to light field
Restricted effect, and influence optical field distribution, therefore, under limiting the refractive index of active layer and the upper ducting layer or be described
The difference of the refractive index of ducting layer is in threshold value so that the size of the light field restriction factor of active layer is limited, and forms smooth sea
Lead, basic mode strong laser field diffuses to lower waveguide layer by original active layer, large scale fundamental mode spot is formed, while it is defeated to improve saturation
Go out power and beam quality, with technique is simple, performance is stable, low cost advantage.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
The structure for the semiconductor optical amplifier led based on ridged active area smooth sea that Fig. 1 is provided by the embodiment of the present invention is shown
It is intended to；
The N-N ' for the semiconductor optical amplifier led based on ridged active area smooth sea that Fig. 2 is provided by the embodiment of the present invention is cutd open
View；
The M-M ' for the semiconductor optical amplifier led based on ridged active area smooth sea that Fig. 3 is provided by the embodiment of the present invention is cutd open
View；
Different active layers and the ridge waveguide single mode under ducting layer refringence that Fig. 4 is provided by the embodiment of the present invention
Condition；
The basic mode light field point that the active layer that Fig. 5 (a) is provided by the embodiment of the present invention is 9% with ducting layer refringence
Cloth；
Basic mode light field point when the active layer and ducting layer refringence that Fig. 5 (b) is provided by the embodiment of the present invention are 1%
Cloth.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
A part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
As shown in Figure 1,2 and 3, the semiconductor led based on ridged active area smooth sea that Fig. 1 is provided by the embodiment of the present invention
The structural representation of image intensifer；The semiconductor light led based on ridged active area smooth sea that Fig. 2 is provided by the embodiment of the present invention
N-N ' the sectional views of amplifier；The semiconductor light led based on ridged active area smooth sea that Fig. 3 is provided by the embodiment of the present invention is put
M-M ' the sectional views of big device.
In a kind of specific embodiment, the present invention provides a kind of semiconductor optical amplification led based on ridged active area smooth sea
Device, including active layer 4b, and the upper ducting layer 4c of the active layer 4b upper and lower surfaces and lower waveguide are grown on respectively
Layer 4a, the difference of the refractive index of the active layer 4b and the upper ducting layer 4c or lower waveguide layer 4a refractive index is less than
Or equal to threshold value so that the field distribution of basic mode high light diffuses to the upper ducting layer 4c and the lower ripple from the active layer 4b
Conducting shell 4a.
Specifically, a kind of as shown in figure 1, semiconductor optical amplification led based on ridged active area smooth sea that the present embodiment is provided
The structure of device is：N faces lower metal electrode 1, substrate 2 are followed successively by from the bottom to top, waveguide under-clad layer 3, waveguide core layer 4, wrapped in waveguide
Layer 5, contact electrode layer 6, insulating barrier 7 and P faces electrode of metal 8；N faces lower metal electrode 1 is grown in the thinned back side of substrate 2,
The electrical connection with substrate 2 is realized, P faces electrode of metal 8 is grown in above P-type electrode contact layer 6 and insulating barrier 7, and forms P faces
Electric current injects window 9, realizes the electrical connection with P-type electrode contact layer 6；Waveguide core layer 4 is located at waveguide top covering 5 with being wrapped under waveguide
Between layer 3, including lower waveguide layer 4a, active layer 4b and upper ducting layer 4c, it is grown in successively on waveguide under-clad layer 3；Wrapped in waveguide
Layer 5 includes upper limiting layer 5a and upper cushion 5b, is grown in successively on active layer 4b；Waveguide under-clad layer 3 includes bottom breaker 3a
With lower limit layer 3b, grow successively on the substrate 2.
As shown in Figures 2 and 3, waveguide core layer 4：Lower waveguide layer 4a thickness is h2, its effective refractive index is n2, active layer 4b
Thickness be h3, its effective refractive index is n1eff, upper ducting layer 4c thickness is h4, its effective refractive index is n3；Waveguide under-clad layer
3：The thickness of waveguide under-clad layer 3 is h1, lower limit layer 3b effective refractive index is n41, bottom breaker 3a effective refractive index is
n42；Waveguide top covering 5：Upper limiting layer 5a and upper cushion 5b thickness are respectively h5And h6, effective refractive index is respectively n51And n52。
Said structure is completed by an epitaxial growth, a length of L of chamber of total, using sense coupling (ICP)
Technology etches table top, obtains plane area and rib region, and epitaxial wafer etching depth is hetch, a width of W of etching waveguide barrib, then adopt
A layer insulating 7 is deposited with plasma activated chemical vapour deposition (PECVD) technology, P faces metal is prepared using magnetic control sputtering system
Electrode, sets contact electrode layer 6, thickness is h between P faces metal electrode and waveguide top covering 57, carry out afterwards secondary photoetching,
Development, etching form P surface current windows, and the width of P surface currents injection window 9 is Wwindow, it is thinned, polishes by substrate 2, lining
The back side at bottom 2 prepares N faces metal electrode, alloy, completes whole device preparation technology.
Ridged semiconductor optical amplifier is divided into flat board area and rib region, divides from optical waveguide mode is theoretical with coupled mode theory
Analysis, in the case where layers of material is certain, the thickness h of the pattern quantity supported only with lower waveguide layer 4a2, active layer 4b thickness
Spend h3, upper ducting layer 4c thickness h4, epitaxial wafer etching depth hetchWith duct width WribIt is relevant.Using inductively wait from
Daughter etching (ICP) technology etching table top, the similar mode filter in flat board area, when higher order mode is coupled to continuous flat board mould
During formula, it can fall from the radiation of flat board area two ends, the effect for filtering high-order mode be reached, therefore, by controlling ridge waveguide width WribWith
Depth hetch, obtain image intensifer ridge waveguide single mode condition, can adjust within the specific limits active area light field restriction factor and
Basic mode pattern spot size.The present embodiment is by controlling the refractive index and the upper ducting layer 4c or described of the active layer 4b
The difference of lower waveguide layer 4a refractive index is in threshold range, and threshold value is smaller so that active area light field restriction factor is smaller, is formed
Smooth sea is led so that the increase of basic mode strong laser field penetration depth, and the lower waveguide layer 4a is diffused to from the active layer 4b.
Further, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, the lower waveguide layer 4a
Thickness h2More than upper ducting layer 4c thickness h4, not only contribute to the radiating of whole semiconductor optical amplifier face-down bonding, moreover it is possible to
Prevent that strong laser field from revealing in upper ducting layer 4c pattern.
Further, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, the scope of the threshold value
For 0-3%.
Wherein, the difference of active layer 4b refractive index and the upper ducting layer 4c or lower waveguide layer 4a refractive index
Scope obtains active layer 4b light fields restriction factor in 0-3%, by calculating can be less than 0.0327, when refringence is reduced to
When less than 1%, active layer 4b light fields restriction factor can be less than 0.0157.The refringence of active layer 4b and ducting layer is in 0-3%
Interior so that basic mode strong laser field diffuses to ducting layer 4c and lower waveguide layer 4a, its single mode dimensions completely can be with single-mode fiber
Light field mode sizes are comparable, realize high saturation output power, large scale single mode hot spot, the semiconductor optical amplification of high light beam quality
Device.Certainly, threshold range includes but is not limited to above range, due to the difference using material, may be floated downward in above range
It is dynamic, in protection domain.
Further, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, the active layer 4b bags
Include：
Non-impurity-doped potential well grows the MQW constituted with non-impurity-doped potential barrier cycle staggering；
It is grown on the non-impurity-doped boundary layer of the MQW upper surface and lower surface.
Wherein, active layer 4b provides enough gains of light in electrical pumping as the gain region of amplifier.The present embodiment
In, active layer 4b grows the MQW such as InGaAsP/ constituted using non-impurity-doped potential well with non-impurity-doped potential barrier cycle staggering
InP multi-quantum pit structure, certainly, active layer 4b include but is not limited to above-mentioned material composition, can also be handed over for other P-type materials
Paraplasia length is constituted, in protection domain.
Further, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, the non-impurity-doped border
The thickness range of layer is 5nm-50nm.
Wherein, rational boundary layer thickness can not only obtain the preferable dim light restriction factor of basic mode, realize large scale base
Mould smooth sea is led, moreover it is possible to is avoided the occurrence of and is contained waveguide in waveguide.Depending on the thickness in non-impurity-doped boundary layer is according to actual conditions.
Further, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, also include：
Waveguide top covering 5, including it is grown on p-type doping the upper limiting layer 5a, Yi Jisheng of the upper ducting layer 4c upper surfaces
It is longer than the upper cushion 5b of p-type doping of the upper limiting layer 5a upper surfaces, the refractive index of the upper cushion 5b of p-type doping is more than
Or the refractive index for the upper limiting layer 5a that adulterated equal to the p-type.
Wherein, in the present embodiment, upper ducting layer 4c uses InxGaAsPy materials, upper limiting layer 5a can be by single p-type
Dopant material is constituted, or the diluted waveguide of two kinds of material alternating growths is constituted, and upper cushion 5b can be highly doped using p-type
Miscellaneous material.The refractive index that the upper cushion 5b of p-type doping refractive index is more than or equal to p-type doping upper limiting layer 5a is that can be achieved
Limitation to light field transverse mode.
Further, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, also include：
Waveguide under-clad layer 3, including it is grown on n-type doping the lower limit layer 3b, Yi Jisheng of the lower waveguide layer 4a lower surfaces
It is longer than the n-type doping bottom breaker 3a of the lower limit layer 3b lower surfaces, the refractive index of the n-type doping bottom breaker 3a is less than
Or equal to the refractive index of the n-type doping lower limit layer 3b.
Wherein, lower waveguide layer 4a can be single n-type doping material, or the dilution of two kinds of material alternating growths
Waveguide, dilution fiber waveguide is generally stacked by the undoped InP/InGaAsP combination layers of multilayer periodic arrangement and formed.Present embodiment
In, lower waveguide layer 4a is used and upper ducting layer 4c identical materials InxGaAsPy materials.
Described lower limit layer 3b is the n-type doping material being grown on bottom breaker 3a, is generally used and bottom breaker
3a identical materials, doping concentration gradual change can effectively limit light field transverse mode diffusion.Bottom breaker 3a is to be grown in substrate 2
On N-type high doped materials, generally using and the identical material of substrate 2, the defect of substrate 2 can be modified, beneficial to subsequent material give birth to
It is long.The refractive index of the n-type doping bottom breaker 3a is less than or equal to the refractive index of the n-type doping lower limit layer 3b
Realize the limitation to light field transverse mode.
In summary, refractive index meets n1eff≥n2≈n3>n41≈n51≥n42≈n52, the field distribution of basic mode high light can be achieved and expands
Be dissipated to lower waveguide layer 4a, and to the limitation of light field transverse mode, at the same realize high saturation output power, large scale single mode hot spot,
The semiconductor optical amplifier of high light beam quality.
Further, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, also include：
The p-type heavy doping being arranged between the upper surface of waveguide top covering 5 and the lower surface of P faces electrode of metal 8
Contact electrode layer 6.
Wherein, contact electrode layer 6 is grown on cushion 5b, using p-type heavy doping, beneficial to Ohmic contact.
Further, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, also include：
Be covered in by the upper surface of the upper ducting layer 4c plane domains constituted, and the waveguide top covering 5 and
The insulating barrier 7 for the rib region upper surface that the part of contact electrode layer 6 is constituted, the thickness range of the insulating barrier 7 is
100nm-300nm.Actual process often uses two kinds of thickness of 200nm and 300nm, it is to avoid electric leakage.
Wherein, using plasma chemical vapor deposition (PECVD) technology deposition layer of silicon dioxide insulating barrier 7, it is
Can as etched portions insulating barrier 7, also can as ridge waveguide low-refraction covering limitation optical mode leakage.Due to enough
Thick insulating barrier 7 plays a part of limiting light field pattern, prevents light field from being revealed to metal level, prevents the electric current of ridge waveguide both sides
Injection.
Further, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, also include：
The highly doped substrate 2 of N-type of the lower surface of waveguide under-clad layer 3 is arranged at, and is arranged at the highly doped lining of the N-type
The N faces lower metal electrode 1 of the lower surface of bottom 2.
Wherein, substrate 2 can be the materials such as N-type highly doped GaAs, InP, from Lattice Matching principle, substrate 2
Selection determines the excitation wavelength of epitaxial chip, and the present embodiment mainly uses the highly doped InP substrate 2 of N-type.Metal electrode is by multilayer
Metal is constituted, and wherein P faces electrode of metal 8 typically uses Ti-Pt-Au, and N faces lower metal electrode 1 typically uses Au-Ge-Ni.
Further, in the above-mentioned semiconductor optical amplifier led based on ridged active area smooth sea, front/rear end is coated with instead
Penetrate the anti-reflection film 10 that rate is less than 0.01%.
Wherein, front/rear end is referred in the two ends of whole semiconductor amplifier, i.e. longitudinal section, is coated with reflectivity and is less than
0.01% anti-reflection film 10 can reduce the mode reflection of input and output to greatest extent.
Different active layer 4b and the ridge waveguide list under ducting layer refringence that Fig. 4 is provided by the embodiment of the present invention
Mould condition.
Heavy line SM1_0% represent active area and waveguide section refringence as 0 when single mode boundary line, region table below
Show as etching depth hetchWith ridge waveguide width WribSize at this region, ridge waveguide is single mode waveguide.Similarly, carefully
Solid line SM2_1%, short broken line SM3_2%, break line SM4_3%, dotted line SM5_9% and the region that includes below are represented respectively
Single mode boundary line and single mode region when active area is 1%, 2%, 3% and 9% with waveguide section refringence.As can be seen that with
Active layer 4b and ducting layer refringence increase, etching depth hetchWith ridge waveguide width WribSingle mode condition can be met
Region taper into.Matched to meet with single-mode fiber pattern, work as WribAt=6 μm, SM1_0%, SM2_1%, SM3_
2% meets single mode condition, and the etching depth h allowedetchIt is gradually reduced, considers the factors such as fabrication error selection SM2_
1%, etching depth hetch=2.05 μm.
The basic mode light field point that the active layer 4b that Fig. 5 (a) is provided by the embodiment of the present invention is 9% with ducting layer refringence
Cloth；Basic mode optical field distribution when the active layer 4b and ducting layer refringence that Fig. 5 (b) is provided by the embodiment of the present invention are 1%.
Their lower waveguide layer 4a is thick more than upper ducting layer 4c, and basic mode center optical field distribution is transferred to lower waveguide layer 4a from active layer 4b.
From Fig. 5 (a) as can be seen that when refringence is 9%, ducting layer has been formed to active layer 4b with active layer 4b
For sandwich layer, upper ducting layer 4c and waveguide that lower waveguide layer 4a is upper under-clad layer, because active layer 4b light fields restriction factor is very high, reach
To 0.1243, this high-amplitude wave, which is led, to be difficult to form large-sized single-mode field distribution, the distribution of light intensity contour region shown in arrow
Include 86.5% distribution of light intensity.It is can be seen that from Fig. 5 (b) when refringence is 1%, upper ducting layer 4c and lower waveguide layer 4a
Faint waveguide is formed with active layer 4b, light field is redistributed, and forming above ducting layer 4c, lower waveguide layer 4a, active layer 4b is
Sandwich layer, waveguide top covering 5, waveguide under-clad layer 3 are the ridge waveguide of upper and lower covering, now active layer 4b light fields restriction factor
Have 0.0157, because lower waveguide layer 4a is thick more than upper ducting layer 4c, basic mode center optical field distribution is transferred to lower ripple from active layer 4b
Conducting shell 4a, the distribution of light intensity contour region shown in arrow equally includes 86.5% distribution of light intensity, it can be seen that its mode spot-size
It is far longer than mould class size when refringence is 9%, completely can be comparable with single-mode fiber light field mode sizes.
The semiconductor optical amplifier led based on ridged active area smooth sea that the present invention is provided, when easily reply is without heat transfer
Heat power consumption, is expected to realize that high saturation output power under big single mode dimensions, high brightness, low-loss light amplification are exported, and big
Mode sizes reduce Cavity surface power density, it is possible to achieve with single-mode fiber high efficiency Butt-coupling.
The embodiment of each in specification is described by the way of progressive, and what each embodiment was stressed is and other realities
Apply the difference of example, between each embodiment identical similar portion mutually referring to.For device disclosed in embodiment
Speech, because it is corresponded to the method disclosed in Example, so description is fairly simple, related part is referring to method part illustration
.
Specific case used herein is set forth to the principle and embodiment of the present invention, and above example is said
It is bright to be only intended to help and understand the method for the present invention and its core concept.It should be pointed out that for the ordinary skill of the art
For personnel, under the premise without departing from the principles of the invention, some improvement and modification can also be carried out to the present invention, these improvement
Also fallen into modification in the protection domain of the claims in the present invention.
Claims (10)
1. a kind of semiconductor optical amplifier led based on ridged active area smooth sea, it is characterised in that including active layer, and respectively
Be grown on the upper ducting layer and lower waveguide layer of the active layer upper and lower surface, the refractive index of the active layer with it is described on
The difference of the refractive index of ducting layer or the lower waveguide layer is less than or equal to threshold value so that the field distribution of basic mode high light is from described
Active layer diffuses to the upper ducting layer and the lower waveguide layer.
2. the semiconductor optical amplifier as claimed in claim 1 led based on ridged active area smooth sea, it is characterised in that the threshold
The scope of value is 0-3%.
3. the semiconductor optical amplifier as claimed in claim 2 led based on ridged active area smooth sea, it is characterised in that described to have
Active layer includes：
Non-impurity-doped potential well grows the MQW constituted with non-impurity-doped potential barrier cycle staggering；
It is grown on the non-impurity-doped boundary layer of the MQW upper surface and lower surface.
4. the semiconductor optical amplifier as claimed in claim 3 led based on ridged active area smooth sea, it is characterised in that the nothing
The thickness range in doping boundary layer is 5nm-50nm.
5. the semiconductor optical amplifier as claimed in claim 4 led based on ridged active area smooth sea, it is characterised in that also wrap
Include：
Waveguide top covering, including the p-type doping upper limiting layer of the upper ducting layer upper surface is grown on, and be grown on described
The upper cushion of p-type doping of limiting layer upper surface, the refractive index of the upper cushion of p-type doping is less than or equal to the p-type
The refractive index of doping upper limiting layer.
6. the semiconductor optical amplifier as claimed in claim 5 led based on ridged active area smooth sea, it is characterised in that also wrap
Include：
Waveguide under-clad layer, including be grown on the n-type doping lower limit layer of the lower waveguide layer lower surface, and be grown on it is described under
The n-type doping bottom breaker of limiting layer lower surface, the refractive index of the n-type doping bottom breaker is less than or equal to the N-type
The refractive index of doping lower limit layer.
7. the semiconductor optical amplifier as claimed in claim 6 led based on ridged active area smooth sea, it is characterised in that also wrap
Include：
The electrode for the p-type heavy doping being arranged between the waveguide top covering upper surface and P faces electrode of metal lower surface connects
Contact layer.
8. the semiconductor optical amplifier as claimed in claim 7 led based on ridged active area smooth sea, it is characterised in that also wrap
Include：
It is covered in the upper surface for the plane domain being made up of the upper ducting layer, and the waveguide top covering and the electrode
The insulating barrier for the rib region upper surface that layer segment is constituted is contacted, the thickness range of the insulating barrier is 100nm-300nm.
9. the semiconductor optical amplifier as claimed in claim 8 led based on ridged active area smooth sea, it is characterised in that also wrap
Include：
The highly doped substrate of N-type of the waveguide under-clad layer lower surface is arranged at, and is arranged at the highly doped substrate following table of the N-type
The N faces lower metal electrode in face.
10. the semiconductor optical amplifier as claimed in claim 9 led based on ridged active area smooth sea, it is characterised in that front and rear
End face is coated with the anti-reflection film that reflectivity is less than 0.01%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710287611.2A CN106961071B (en) | 2017-04-27 | 2017-04-27 | Semiconductor optical amplifier based on ridge active region weak waveguide |
Applications Claiming Priority (1)
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| CN111641103A (en) * | 2020-06-09 | 2020-09-08 | 厦门市三安光电科技有限公司 | Laser diode and manufacturing method thereof |
| JP2021525962A (en) * | 2018-05-30 | 2021-09-27 | エヌライト， インコーポレイテッドＮｌｉｇｈｔ， Ｉｎｃ． | Large Optical Resonator (LOC) Laser Diode with Quantum Well Offset and Efficient Single Mode Laser Emission Along the Fast Axis |
| CN113507040A (en) * | 2021-07-02 | 2021-10-15 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser and preparation method thereof |
| CN114450861A (en) * | 2019-09-26 | 2022-05-06 | 日本电信电话株式会社 | Light emitter |
| CN114552384A (en) * | 2020-11-27 | 2022-05-27 | 山东华光光电子股份有限公司 | Semiconductor laser device for realizing fundamental mode lasing by changing local lateral refractive index and preparation method thereof |
| CN114706163A (en) * | 2022-03-28 | 2022-07-05 | 深圳技术大学 | Suspended ridge optical waveguide device and 3D printing preparation method thereof |
| CN115021823A (en) * | 2021-03-04 | 2022-09-06 | 华为技术有限公司 | Modulation amplifier, light emitting device, optical network unit and optical line terminal |
| CN115189231A (en) * | 2022-09-14 | 2022-10-14 | 日照市艾锐光电科技有限公司 | Strip-shaped channel flat plate coupling waveguide semiconductor laser and preparation method thereof |
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| JP2021525962A (en) * | 2018-05-30 | 2021-09-27 | エヌライト， インコーポレイテッドＮｌｉｇｈｔ， Ｉｎｃ． | Large Optical Resonator (LOC) Laser Diode with Quantum Well Offset and Efficient Single Mode Laser Emission Along the Fast Axis |
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| CN114706163A (en) * | 2022-03-28 | 2022-07-05 | 深圳技术大学 | Suspended ridge optical waveguide device and 3D printing preparation method thereof |
| CN114706163B (en) * | 2022-03-28 | 2023-08-08 | 深圳技术大学 | Suspended ridge optical waveguide device and 3D printing preparation method thereof |
| CN115189231A (en) * | 2022-09-14 | 2022-10-14 | 日照市艾锐光电科技有限公司 | Strip-shaped channel flat plate coupling waveguide semiconductor laser and preparation method thereof |
| CN115189231B (en) * | 2022-09-14 | 2023-09-26 | 日照市艾锐光电科技有限公司 | Strip-channel slab coupling waveguide semiconductor laser and preparation method thereof |
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