CN107240857A - A kind of vertical cavity surface emitting laser and preparation method thereof - Google Patents
A kind of vertical cavity surface emitting laser and preparation method thereof Download PDFInfo
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- CN107240857A CN107240857A CN201710509464.9A CN201710509464A CN107240857A CN 107240857 A CN107240857 A CN 107240857A CN 201710509464 A CN201710509464 A CN 201710509464A CN 107240857 A CN107240857 A CN 107240857A
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- distribution bragg
- bragg reflector
- reflector group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention discloses a kind of vertical cavity surface emitting laser and preparation method thereof.Wherein, the laser includes：N electrode, substrate, first buffer layer, the first distribution Bragg reflector group, active layer, the second distribution Bragg reflector group and the second buffer layer stacked gradually, the part surface of the cylindrical stage body to be formed and the first distribution Bragg reflector group around the cylindrical stage body is performed etching to second buffer layer, the second distribution Bragg reflector group and active layer, the mask formed on the side wall and part surface of cylindrical stage body, and the P electrode in second buffer layer；Vertical cavity surface emitting laser that the present invention is provided and preparation method thereof, pass through the quantum well structure of active layer, the first distribution Bragg reflector group and the second distribution Bragg reflector group, realize super-narrow line width and the steep side spectral response of flat-top, VCSEL threshold current can be reduced, photoelectric transformation efficiency is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of vertical cavity surface emitting laser and preparation method thereof.
Background technology
The features such as vertical cavity surface emitting laser is due to single longitudinal mode, output circular light spot, makes its application more and more extensive.
For a long time, vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser, with
Lower abbreviation VCSEL) lower power levels are constantly in, the application of this device is greatly restricted, several years up to date
The development of VCSEL Material growths and technology of preparing just makes its power level start to be greatly enhanced, so as to swash for VCSEL
The application development of light device opens wide prospect.However, as VCSEL laser powers are continuously available raising, traditional is vertical
The threshold current of cavity surface emitting lasers is higher, and photoelectric transformation efficiency is low, limits the further of vertical cavity surface emitting laser
Development.
Therefore, a kind of vertical-cavity-face emitting semiconductor laser how is proposed, VCSEL threshold current can be reduced, carried
High-photoelectric transformation efficiency turns into industry important topic urgently to be resolved hurrily.
The content of the invention
For defect of the prior art, the present invention provides a kind of vertical cavity surface emitting laser and preparation method thereof.
On the one hand, the present invention proposes a kind of vertical cavity surface emitting laser, including stack gradually N electrode, substrate, first
Cushion, the first distribution Bragg reflector group, active layer, the second distribution Bragg reflector group and second buffer layer, to institute
State second buffer layer, the second distribution Bragg reflector group and the active layer perform etching the cylindrical stage body to be formed with
And the part surface of the first distribution Bragg reflector group around the cylindrical stage body, in the cylindrical stage body
The mask formed on side wall and the part surface, and the P electrode in the second buffer layer；
Wherein, the first distribution Bragg reflector group includes at least 10 pairs distributed Blatt reflectives being stacked
The content of the aluminium included in mirror, the first distribution Bragg reflector group is undergone mutation in the direction of growth, the active layer
Including 2 to 4 quantum well structures being stacked, the part surface and the first distribution Bragg reflector group and described
The contact plane of active layer is coplanar and the part surface is in contact with the side wall of the cylindrical stage body.
Wherein, three couples distribution bragg in the first distribution Bragg reflector group of the active layer
The aluminium content of speculum is remaining distribution Bragg reflector in 90%, the first distribution Bragg reflector group
Aluminium content is 20%.
Wherein, the first distribution Bragg reflector group includes 36 pairs of distribution Bragg reflectors.
Wherein, the active layer includes 2 quantum well structures, and the thickness of each quantum well structure is 6 nanometers.
Wherein, the second distribution Bragg reflector group includes 22 pairs of distribution Bragg reflectors.
Wherein, the thickness of the substrate is 100 microns, and the thickness of the first buffer layer is 50 nanometers.
Wherein, the thickness of the P electrode is 350 nanometers.
On the other hand, the present invention provides a kind of preparation method of vertical cavity surface emitting laser, including：
In Grown first buffer layer, and the distribution Bragg reflector of growth regulation one in the first buffer layer
Group；Wherein, the first distribution Bragg reflector group includes at least 10 pairs distribution Bragg reflectors, the first distribution cloth
The content of the aluminium included in glug speculum group is undergone mutation in the direction of growth；
Active layer is grown in the first distribution Bragg reflector group, the active layer includes 2 to 4 SQW knots
Structure；
The distribution Bragg reflector group of growth regulation two on the active layer, and in second distribution Bragg reflector
Second buffer layer is grown in group；
The second buffer layer, the second distribution Bragg reflector group and the active layer are performed etching, made
Go out cylindrical stage body and expose the part surface of the first distribution Bragg reflector group around the cylindrical stage body, institute
State part surface and the first distribution Bragg reflector group and the active layer contact plane is coplanar and the part table
Face is in contact with the side wall of the cylindrical stage body；
In the side wall and the part surface formation mask of first distribution Bragg reflector of the cylindrical stage body；
P electrode is made in the second buffer layer, and the substrate is carried out to make N electrode after being thinned.
Vertical cavity surface emitting laser that the present invention is provided and preparation method thereof, passes through the quantum well structure of active layer,
One distribution Bragg reflector group and the second distribution Bragg reflector group, realize super-narrow line width and the steep side spectral response of flat-top,
VCSEL threshold current can be reduced, photoelectric transformation efficiency is improved.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are this hairs
Some bright embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, can be with root
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the cross-sectional view of one embodiment of the invention vertical cavity surface emitting laser；
Fig. 2 is the schematic flow sheet of the preparation method of one embodiment of the invention vertical cavity surface emitting laser；
Description of reference numerals：
1-N electrodes；2- substrates；
3- first buffer layers；4- the first distribution Bragg reflector groups；
5- active layers；6- the second distribution Bragg reflector groups；
7- second buffer layers；8- masks；
9-P electrodes.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached in the embodiment of the present invention
Figure, the technical scheme in the embodiment of the present invention is explicitly described, it is clear that described embodiment is a part of the invention
Embodiment, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art are not making wound
The every other embodiment obtained under the premise of the property made work, belongs to the scope of protection of the invention.
Fig. 1 is the cross-sectional view of one embodiment of the invention vertical cavity surface emitting laser, as shown in figure 1, this hair
The vertical cavity surface emitting laser of bright offer, including：N electrode 1, substrate 2, the first buffer layer 3, first stacked gradually is distributed cloth
Glug speculum group 4, active layer 5, the second distribution Bragg reflector group 6 and second buffer layer 7, to second buffer layer 7, second
Distribution Bragg reflector group 6 and active layer 5 perform etching the cylindrical stage body to be formed and around the cylindrical stage body
The part surface of first distribution Bragg reflector group 4, is formed on the side wall and the part surface of the cylindrical stage body
Mask 8, and the P electrode 9 in second buffer layer 7；
Wherein, the first distribution Bragg reflector group 4 includes at least 10 pairs distribution Bragg reflectors being stacked, the
The content of the aluminium included in one distribution Bragg reflector group 4 is undergone mutation in the direction of growth, and active layer 5 includes 2 to 4 layers
The contact plane of the folded quantum well structure set, the part surface and the first distribution Bragg reflector group 4 and active layer 5 is total to
The face and part surface is in contact with the side wall of the cylindrical stage body.
Substrate 2 uses GaAs materials, and the thickness of substrate 2 can be 100 microns, be 2 × 10 containing doping concentration18cm-3's
Si.The thickness of the first buffer layer 3 grown on the substrate 2 is 50 nanometers, and first buffer layer 3 can use GaAs materials.
The the first distribution Bragg reflector group 4 grown on one cushion 3 includes at least 10 pairs distributed Blatt reflectives being stacked
Mirror, the distribution Bragg reflector is made up of the material stacked arrangement of two kinds of different refractivities of AlGaAs and GaAs, including
One layer of AlGaAs and one layer of GaAs, the optical thickness per layer material is the 1/4 of the vertical cavity surface emitting laser centre wavelength,
The vertical cavity surface emitting laser centre wavelength can be 850nm, and the refractive index of the first distribution Bragg reflector group 4 exists
More than 99%.The content of the aluminium included in first distribution Bragg reflector group 4 is undergone mutation in the direction of growth, for smoothing
The energy spikes of conduction band and valence band in first distribution Bragg reflector group 4, for example, in the first distribution Bragg reflector group 4
Adjacent two couple distribution Bragg reflector, wherein close to distribution Bragg reflector described in a pair of first buffer layer 3
AlGaAs material layers in Al content be 20%, and close to distribution Bragg reflector described in a pair of active layer 5
Al content is 90% in AlGaAs material layers, makes the content of aluminium in the first distribution Bragg reflector group 4 in the direction of growth
Undergo mutation.Wherein, the distribution Bragg reflector can be n-type.
Active layer 5 is grown in the first distribution Bragg reflector group 4, active layer 5 includes 2 to 4 amounts being stacked
Sub- well structure, the thickness of each quantum well structure can be 6nm, be made up of, wrap GaAs and AlGaAs material stacked arrangements
Include one layer of GaAs and one layer of AlGaAs.There are the second distribution Bragg reflector group 6, the second distribution bragg in the growth of active layer 5
Speculum group 6 distribution Bragg reflector can be constituted described in p-type, the gain of light for providing laser, the second distribution cloth
The refractive index of glug speculum group 6 is more than 99%.Growth has second buffer layer 7 in the second distribution Bragg reflector group 6,
Second buffer layer 7 can use AlGaAs materials.To second buffer layer 7, the second distribution Bragg reflector group 6 and active layer 5
Perform etching to form cylindrical stage body, and form the first distribution Bragg reflector group for surrounding the cylindrical stage body
Part surface, the part surface is in contact with the side wall of the cylindrical stage body, the part surface and the first distribution Bradley
The contact plane of lattice speculum group 4 and active layer 5 is coplanar, is formed on the side wall and the part surface of the cylindrical stage body
Mask 8, mask 8 can use SiO2Material, thickness is 300nm, the overall performance for improving laser.
P electrode 9 is formed with second buffer layer 7, P electrode 9 can be ring-type, and thickness is 350nm, using Ti-Pt-Au
Structure.N electrode 1 is formed with the side relative with first buffer layer 3 of substrate 2, N electrode 1 can use Ge, Au or Ni-Au
Structure, and etch in N electrode 1 light hole of the vertical cavity surface emitting laser.
The vertical cavity surface emitting laser that the present invention is provided, passes through the quantum well structure of active layer, the first distribution bragg
Speculum group and the second distribution Bragg reflector group, realize super-narrow line width and the steep side spectral response of flat-top, can reduce VCSEL
Threshold current, improve photoelectric transformation efficiency.
On the basis of above-described embodiment, further, in the first distribution Bragg reflector group 4 of active layer 5
The aluminium content of three couples distribution Bragg reflector be 90%, described in remaining in the first distribution Bragg reflector group 4
The aluminium content of distribution Bragg reflector is 20%.Said structure, realizes what is included in the first distribution Bragg reflector group 4
The content of aluminium is undergone mutation in the direction of growth.
On the basis of the various embodiments described above, further, the first distribution Bragg reflector group 4 includes dividing described in 36 pairs
Cloth Bragg mirror, and doped silicon impurity.
On the basis of the various embodiments described above, further, active layer 5 includes 2 quantum well structures, each described
The thickness of quantum well structure is 6 nanometers.
On the basis of the various embodiments described above, further, the second distribution Bragg reflector group 6 includes dividing described in 22 pairs
Cloth Bragg mirror, and the zinc impurity that adulterates.
On the basis of the various embodiments described above, further, the thickness of substrate 2 is 100 microns, the thickness of first buffer layer 3
Spend for 50 nanometers.
On the basis of the various embodiments described above, further, the thickness of the P electrode is 350 nanometers.
Fig. 2 is the schematic flow sheet of the preparation method of one embodiment of the invention vertical cavity surface emitting laser, such as Fig. 2 institutes
Show, the preparation method for the vertical cavity surface emitting laser that the present invention is provided includes：
S201, in Grown first buffer layer, and in the first buffer layer, the distribution bragg of growth regulation one is anti-
Penetrate microscope group；Wherein, the first distribution Bragg reflector group includes at least 10 pairs distribution Bragg reflectors, described first point
The content of the aluminium included in cloth Bragg reflection microscope group is undergone mutation in the direction of growth；
Specifically, in substrate growth first buffer layer, the thickness of the first buffer layer can be 50nm, using GaAs materials
Material.Then the distribution Bragg reflector group of growth regulation one in the first buffer layer, first distribution Bragg reflector
Group includes the content of the aluminium included at least 10 pairs of distribution Bragg reflector, and the first distribution Bragg reflector group 4
Undergone mutation in the direction of growth, the refractive index of the first distribution Bragg reflector group 6 of formation is more than 99%.Wherein, institute
GaAs sills can be used by stating substrate, be 2 × 10 containing doping concentration18cm-3Si, the thickness of the substrate is usually 2 millis
Rice.
S202, grow active layer in the first distribution Bragg reflector group, the active layer includes 2 to 4 amounts
Sub- well structure；
Specifically, formed after the first distribution Bragg reflector group, in the first distribution Bragg reflector group
Upper growth active layer, the active layer includes 2 to 4 quantum well structures being stacked, each quantum well structure
Thickness can be 6nm, be made up of GaAs and AlGaAs material stacked arrangements, including one layer of GaAs and one layer of AlGaAs.
S203, the distribution Bragg reflector group of growth regulation two on the active layer, and in second distribution bragg
Second buffer layer is grown in speculum group；
Specifically, formed after the active layer, in the distribution Bragg reflector group of active layer growth regulation two, described the
Two distribution Bragg reflector groups distribution Bragg reflector can be constituted described in p-type, the second distribution cloth after formation
The refractive index of glug speculum group is more than 99%.Growth regulation two is buffered in the second distribution Bragg reflector group again
Layer, the second buffer layer can use AlGaAs materials.
S204, the second buffer layer, the second distribution Bragg reflector group and the active layer are performed etching,
Produce cylindrical stage body and expose the part table of the first distribution Bragg reflector group around the cylindrical stage body
The contact plane of face, the part surface and the first distribution Bragg reflector group and the active layer is coplanar and the portion
Point surface is in contact with the side wall of the cylindrical stage body.
Specifically, after the second buffer layer is formed, buffered by low pressure plasma lithographic method to described second
Layer, the second distribution Bragg reflector group and the active layer are performed etching, and produce cylindrical stage body, the cylinder
Stage body is located on the contact plane of the first distribution Bragg reflector group and the active layer.And etching is exposed around described
The part surface of the first distribution Bragg reflector group of cylindrical stage body, the part surface and the described first distribution cloth
The contact plane of glug speculum group and the active layer is coplanar, and the side wall phase of the part surface and the cylindrical stage body
Contact.
S205, the cylindrical stage body side wall and first distribution Bragg reflector part surface formation cover
Film；
Specifically, after cylindrical stage body and the part surface is formed, using plasma enhancing chemical vapor deposition
Method deposits one layer of SiO on the side wall of the cylindrical stage body and the part surface of first distribution Bragg reflector2Make
For mask, the thickness of the mask can be 300nm.
S206, make P electrode in the second buffer layer, and the substrate is carried out to make N electrode after being thinned.
Specifically, after the mask that completes, sputtered using electron beam transpiration method on the surface of the second buffer layer
P electrode is formed, the thickness of the P electrode can be 350nm, and using Ti-Pt-Au structures, the P electrode can make cyclization
Shape.The thickness of the substrate is reduced to 100 μm, equipped using vacuum coating, in 300 DEG C of high temperature in the substrate and described first
The relative one side of cushion is deposited one layer of Ge/Au/Ni-Au structure, and after carrying out rapid thermal treatment, forms N electrode.Form institute
After stating N electrode, it is possible to use plasma dry etch process etches the vertical-cavity surface-emitting in the N electrode and swashed
The light hole of light device.
Below exemplified by making the vertical cavity surface emitting laser process that a present invention is provided, to describe described hang down in detail
The manufacturing process of straight cavity surface-emitting laser：
Step 1: in the first buffer layer that GaAs substrate growths thickness is 50nm, the first buffer layer uses GaAs materials
Material, the doping concentration of GaAs substrates is 2 × 1018cm-3.Then in the first buffer layer under 1000-1300 DEG C of environment
The first distribution Bragg reflector group described in n-type is grown, the first distribution Bragg reflector group includes dividing described in 36 pairs
Cloth Bragg mirror, the distribution Bragg reflector is to be laminated row by the material of two kinds of different refractivities of AlGaAs and GaAs
Row are constituted, including one layer of AlGaAs and one layer of GaAs, used during growth with metal bonding methods by AlGaAs layer with
GaAs layers stick together, and the optical thickness per layer material is the 1/4 of the vertical cavity surface emitting laser centre wavelength, described to hang down
Straight cavity surface-emitting laser centre wavelength can be 850nm.Wherein, the aluminium included in the first distribution Bragg reflector group
Content undergone mutation in the direction of growth, close to the active layer the first distribution Bragg reflector group in three couples
The aluminium content of the distribution Bragg reflector is remaining described distribution in 90%, the first distribution Bragg reflector group
The aluminium content of Bragg mirror is 20%.The refractive index of the first distribution Bragg reflector group 4 completed exists
More than 99%.
Step 2: using metal organic chemical vapor deposition technology in the first distribution Bragg reflector group described in n-type
2 quantum well structures of upper growth, the thickness of each quantum well structure can be 6nm, by one layer of GaAs and one layer of AlGaAs
Material is constituted, and 2 quantum well structure storehouses constitute the active layer.
Step 3: on the active layer the second distribution Bragg reflector group described in growing P-type, it is described second distribution cloth
Glug speculum group includes 22 pairs of distribution Bragg reflectors, and the distribution Bragg reflector is by AlGaAs and GaAs
The material stacked arrangement of two kinds of different refractivities is constituted, including one layer of AlGaAs and one layer of GaAs, is used during growth
AlGaAs layers and GaAs layers are sticked together with metal bonding methods, the optical thickness per layer material is the vertical-cavity surface-emitting
The 1/4 of laser center wavelength, the vertical cavity surface emitting laser centre wavelength can be 850nm.Wherein, formation is described
The refractive index of second distribution Bragg reflector group is more than 99%.Then it is raw in the second distribution Bragg reflector group
The long second buffer layer, the second buffer layer uses AlGaAs materials.
Step 4: by low pressure plasma lithographic method, it is anti-to the second buffer layer, second distribution bragg
Penetrate microscope group and the active layer performs etching to form cylindrical stage body, and expose described in the n-type around the cylindrical stage body
The part surface of one distribution Bragg reflector group, the part surface is in contact with the side wall of the cylindrical stage body, described
Part surface and the contact plane of the first distribution Bragg reflector group and the active layer are coplanar.
Step 5: using plasma enhanced CVD method in the side wall of the cylindrical stage body and described first
The thick SiO of one layer of 300nm are deposited on the part surface of distribution Bragg reflector2As mask, to improve the entirety of laser
Performance.
Step 6: the Ti-Pt- that a layer thickness is 350nm is sputtered in the second buffer layer using electron beam transpiration method
Au structures, as the p-electrode, the p-electrode is in annular shape.The thickness of GaAs substrates is reduced to 100 μm again, then using true
Empty plated film equipment, in 300 DEG C of high temperature depositions, one layer of Ge/Au/Ni-Au structure in GaAs substrates with growing the first buffer layer phase
To side surface on, carry out rapid thermal treatment after, form N electrode on gaas substrates.Finally, plasma is recycled
Dry etching technology etches the light hole of the vertical cavity surface emitting laser in the N electrode.
The preparation method for the vertical cavity surface emitting laser that the present invention is provided, by the SQW knot for producing active layer
Structure, the first distribution Bragg reflector group and the second distribution Bragg reflector group, realize super-narrow line width and the steep marginal ray spectrum of flat-top
Response, can reduce VCSEL threshold current, improve photoelectric transformation efficiency.
On the basis of above-described embodiment, further, before growing the first buffer layer over the substrate, by institute
The side etching for stating first buffer layer described in substrate growth is smooth.
Specifically, can be with using plasma dry etching work before growing the first buffer layer over the substrate
Skill is 2 × 10 in doping concentration18cm-3Silicon GaAs substrates on etch, make the substrate towards the one of the first buffer layer
The surface etch of side is smooth, for example, the r.m.s. roughness of the substrate surface after etching is less than 1nm.Wherein, carved in dry method
SiCl is used during erosion4/Ar/H2Gas.
On the basis of the various embodiments described above, further, side wall and first distribution in the cylindrical stage body
The part surface formation mask of Bragg mirror includes：
Using plasma strengthens side wall and the first distribution cloth of the CVD method in the cylindrical stage body
Spill SiO that part surface deposit one layer 300 nanometer thickness of the glug speculum group towards the direction of growth2It is used as mask.
Specifically, using plasma enhanced CVD method in the side wall of the cylindrical stage body and described first
One layer of SiO is deposited on the part surface of distribution Bragg reflector2As mask, the thickness of the mask is 300nm, described to cover
Film can improve the overall performance of the vertical cavity surface emitting laser.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
The present invention is described in detail with reference to the foregoing embodiments, it will be understood by those within the art that：It still may be used
To be modified to the technical scheme described in foregoing embodiments, or equivalent substitution is carried out to which part technical characteristic；
And these modification or replace, do not make appropriate technical solution essence depart from various embodiments of the present invention technical scheme spirit and
Scope.
Claims (10)
1. a kind of vertical cavity surface emitting laser, it is characterised in that including the N electrode stacked gradually, substrate, first buffer layer,
First distribution Bragg reflector group, active layer, the second distribution Bragg reflector group and second buffer layer, it is slow to described second
Rush layer, the second distribution Bragg reflector group and the active layer and perform etching the cylindrical stage body to be formed and around institute
The part surface of the first distribution Bragg reflector group of cylindrical stage body is stated, side wall and institute in the cylindrical stage body
State the mask formed on part surface, and the P electrode in the second buffer layer；
Wherein, the first distribution Bragg reflector group includes at least 10 pairs distribution Bragg reflectors being stacked, institute
The content for stating the aluminium included in the first distribution Bragg reflector group is undergone mutation in the direction of growth, and the active layer includes 2
To 4 quantum well structures being stacked, the part surface and the first distribution Bragg reflector group and described active
The contact plane of layer is coplanar and the part surface is in contact with the side wall of the cylindrical stage body.
2. laser according to claim 1, it is characterised in that close to first distribution bragg of the active layer
The aluminium content of three couples distribution Bragg reflector in speculum group is 90%, the first distribution Bragg reflector group
In remaining distribution Bragg reflector aluminium content be 20%.
3. laser according to claim 1, it is characterised in that the first distribution Bragg reflector group includes 36 pairs
The distribution Bragg reflector.
4. laser according to claim 1, it is characterised in that the active layer includes 2 quantum well structures, often
The thickness of the individual quantum well structure is 6 nanometers.
5. laser according to claim 1, it is characterised in that the second distribution Bragg reflector group includes 22 pairs
The distribution Bragg reflector.
6. laser according to claim 1, it is characterised in that the thickness of the substrate is 100 microns, described first delays
The thickness for rushing layer is 50 nanometers.
7. the laser according to any one of claim 1 to 6, it is characterised in that the thickness of the P electrode is 350 nanometers.
8. a kind of preparation method of vertical cavity surface emitting laser, it is characterised in that including：
In Grown first buffer layer, and the distribution Bragg reflector group of growth regulation one in the first buffer layer；Its
In, the first distribution Bragg reflector group includes at least 10 pairs distribution Bragg reflectors, first distribution bragg
The content of the aluminium included in speculum group is undergone mutation in the direction of growth；
Active layer is grown in the first distribution Bragg reflector group, the active layer includes 2 to 4 quantum well structures；
The distribution Bragg reflector group of growth regulation two on the active layer, and in the second distribution Bragg reflector group
Grow second buffer layer；
The second buffer layer, the second distribution Bragg reflector group and the active layer are performed etching, circle is produced
Cylindricality stage body and the part surface for exposing the first distribution Bragg reflector group around the cylindrical stage body, the portion
The contact plane of point surface and the first distribution Bragg reflector group and the active layer is coplanar and the part surface with
The side wall of the cylindrical stage body is in contact；
In the side wall and the part surface formation mask of first distribution Bragg reflector of the cylindrical stage body；
P electrode is made in the second buffer layer, and the substrate is carried out to make N electrode after being thinned.
9. method according to claim 8, it is characterised in that before growing the first buffer layer over the substrate,
The side etching of first buffer layer described in the substrate growth is smooth.
10. method according to claim 8 or claim 9, it is characterised in that in the side wall of the cylindrical stage body and described first
The part surface formation mask of distribution Bragg reflector includes：
Using plasma strengthens side wall and first distribution bragg of the CVD method in the cylindrical stage body
The SiO of one layer of 300 nanometer thickness is deposited on the part surface of speculum group2It is used as mask.
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| CN108847573A (en) * | 2018-06-27 | 2018-11-20 | 湖北光安伦科技有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
| CN109728502A (en) * | 2019-01-08 | 2019-05-07 | 扬州乾照光电有限公司 | Vertical cavity surface emitting laser epitaxial structure and preparation method thereof |
| CN110190518A (en) * | 2018-02-23 | 2019-08-30 | 朗美通经营有限责任公司 | Transmitter array including the distribution of non-homogeneous transmitter |
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| CN108847573A (en) * | 2018-06-27 | 2018-11-20 | 湖北光安伦科技有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
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| CN111193186A (en) * | 2020-02-28 | 2020-05-22 | 太平洋（聊城）光电科技有限公司 | Vertical cavity surface emitting laser and method of manufacturing the same |
| CN113328013A (en) * | 2020-02-28 | 2021-08-31 | 山东浪潮华光光电子股份有限公司 | Preparation method of high-brightness infrared light emitting diode core and diode core |
| CN114336286A (en) * | 2022-01-11 | 2022-04-12 | 范鑫烨 | Novel vertical cavity surface emitting laser based on two-dimensional super surface and manufacturing method thereof |
| CN114336286B (en) * | 2022-01-11 | 2024-01-02 | 范鑫烨 | Vertical cavity surface emitting laser based on two-dimensional super surface and manufacturing method thereof |
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Address after: 252000 no.259 Huanghe Road, Liaocheng Economic and Technological Development Zone, Shandong Province Patentee after: PACIFIC OPTOELECTRONIC TECHNOLOGY CO.,LTD. Address before: 252000 no.259 Huanghe Road, Liaocheng Economic and Technological Development Zone, Shandong Province Patentee before: Pacific (Liaocheng) Photoelectric Technology Co.,Ltd. |