CN109728502A - Vertical cavity surface emitting laser epitaxial structure and preparation method thereof - Google Patents

Vertical cavity surface emitting laser epitaxial structure and preparation method thereof Download PDF

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CN109728502A
CN109728502A CN201910015307.1A CN201910015307A CN109728502A CN 109728502 A CN109728502 A CN 109728502A CN 201910015307 A CN201910015307 A CN 201910015307A CN 109728502 A CN109728502 A CN 109728502A
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transition zone
layer
type transition
aluminium
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CN109728502B (en
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田宇
韩效亚
吴真龙
杜石磊
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Yangzhou Changelight Co Ltd
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Yangzhou Changelight Co Ltd
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Abstract

The invention discloses a kind of vertical cavity surface emitting laser epitaxial structures and preparation method thereof, wherein the N-type DBR layer Al different by Al constituent contentYGa1‑YAs composition, different AlYGa1‑YThe barrier junction of As interlayer reduces, and utilizes adjacent AlYGa1‑YStress variation between As layers stretches barrier height, so that the barrier junction overall depth of N-type DBR layer shoals, reduce the series connection resistance value of N-type DBR layer, reduce the voltage at N-type DBR layer both ends, reduce the threshold current of DBR layer, so that electric current consumes thermal losses that is less, and then reducing epitaxial structure in N-type DBR layer, the power conversion efficiency and slope efficiency of epitaxial structure are improved.In addition, the Al of difference Al componentYGa1‑YStep is formed between As, barrier potential difference reduces, and electronics can be made to be easier transition, and electronics increases with hole-recombination logarithm, increases particle inverted population, improves gain.

Description

Vertical cavity surface emitting laser epitaxial structure and preparation method thereof
Technical field
The present invention relates to field of laser device technology, more particularly to a kind of vertical cavity surface emitting laser epitaxial structure and its Preparation method.
Background technique
Vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser, abbreviation VCSEL) It is a kind of from the semiconductor laser for projecting laser perpendicular to substrate surface, with small in size, the service life is long, high-efficient, output is round The features such as hot spot, single longitudinal mode, is widely used in the numerous areas such as fiber optic communication, optical storage and laser printing.VCSEL is generally by serving as a contrast Bottom, active area, distributed bragg reflector mirror (Distributed Bragg Reflection, abbreviation DBR) and the coat of metal It is formed etc. several parts, the resonant cavity of the mirror surface composition VCSEL of the mirror surface and p-type DBR of N-type DBR.
VCSEL epitaxial structure is mainly to be mutated DBR, accumulation DBR, obtain higher reflectivity in a manner of linear DBR etc. at present, But the threshold current of existing VCSEL is larger.
Summary of the invention
The object of the present invention is to provide a kind of vertical cavity surface emitting laser epitaxial structure and preparation methods, to reduce The threshold current of VCSEL.
In order to solve the above technical problems, the present invention provides following technical schemes:
A kind of vertical cavity surface emitting laser epitaxial structure, comprising:
Substrate；
Buffer layer positioned at first side surface of substrate；
Deviate from the N-type Distributed Bragg Reflection layer of the one side of substrate, the N-type distribution cloth positioned at the buffer layer Glug reflecting layer includes multiple first stackable units of stacking；
Deviate from the first limiting layer of the buffer layer side positioned at the N-type Distributed Bragg Reflection layer；
Deviate from the first wave conducting shell of Distributed Bragg Reflection layer side positioned at first limiting layer；
Deviate from the quantum hydrazine luminescent layer of first limiting layer side positioned at the first wave conducting shell；
Deviate from the second waveguide layer of first wave conducting shell side positioned at the quantum hydrazine luminescent layer；
Deviate from the second limiting layer of the quantum hydrazine luminescent layer side positioned at the second waveguide layer；
Deviate from the oxide layer of second waveguide layer side positioned at second limiting layer；
Deviate from the p-type Distributed Bragg Reflection layer of second limiting layer side, the p-type point positioned at the oxide layer Cloth is multiple second stackable units that Bragg reflecting layer includes stacking；
Wherein, first stackable unit includes the first N-type transition zone of stacking, the second N-type transition zone, third N-type mistake Layer, the first N-type reflecting layer, the 4th N-type transition zone, the 5th N-type transition zone, the 6th N-type transition zone and the second N-type reflecting layer are crossed, The component of aluminium is gradient to Y2 by Y1 in the first N-type transition zone, and the component of aluminium is gradient to by Y2 in the second N-type transition zone Y3, the component of aluminium is gradient to Y4 by Y3 in the third N-type transition zone, and the group of aluminium is divided into Y4 in first N-type reflecting layer, institute The component for stating aluminium in the 4th N-type transition is gradient to Y3 by Y4, and the component of aluminium is gradient to Y2 by Y3 in the 5th N-type transition, institute The component for stating aluminium in the 6th N-type transition is gradient to Y1 by Y2, and the group of aluminium is divided into Y1 in second N-type reflecting layer, and Y1 is less than Y3 It is less than Y4 less than Y2；
Second stackable unit includes the first p-type reflecting layer and the second p-type reflecting layer of stacking, and first p-type is anti- The component for penetrating aluminium in layer is greater than the component of aluminium in second p-type reflecting layer.
Optionally, the first N-type transition zone, third N-type transition zone, the gradient ramp of aluminium component is full in the 5th N-type transition zone The sine curve in 1/4 period of foot.
Second N-type transition zone, the 4th N-type transition zone, the gradient ramp of aluminium component meets 1/4 week in the 6th N-type transition zone The cosine curve of phase.
Optionally, 0.1 Y1, Y2 0.6, Y3 0.4, Y4 0.9.
Optionally, second stackable unit further include:
Between first p-type reflecting layer and the oxide layer, the first p-type transition zone for being stacked, the second p-type Transition zone, third p-type transition zone, the component of aluminium is gradient to Y2, the second p-type transition by Y1 in the first p-type transition zone The component of aluminium is gradient to Y3 by Y2 in layer, and the component of aluminium is gradient to Y4, first p-type by Y3 in the third p-type transition zone The group of aluminium is divided into Y4 in reflecting layer；
Between first p-type reflecting layer and second p-type reflecting layer, the 4th p-type transition zone that is stacked, 5th p-type transition zone and the 6th p-type transition zone, the component of aluminium is gradient to Y3, the 5th P by Y4 in the 4th p-type transition The component of aluminium is gradient to Y2 by Y3 in type transition, and the component of aluminium is gradient to Y1, the 2nd P by Y2 in the 6th p-type transition The group of aluminium is divided into Y1 in type reflecting layer.
Optionally, the first N-type transition zone, the second N-type transition zone, the third N-type transition zone, the described 4th N-type transition zone, the 5th N-type transition zone are identical with the thickness of the 6th N-type transition zone；
The first p-type transition zone, the second p-type transition zone, the third p-type transition zone, the 4th p-type transition The thickness of layer, the 5th p-type transition zone and the 6th p-type transition zone is identical.
Optionally, the Thickness range of the first N-type transition zone is 1-10nm, including endpoint value；
The Thickness range of the first p-type transition zone is 1-10nm, including endpoint value.
Optionally, the value range of the first stackable unit number described in the N-type Distributed Bragg Reflection layer is 1- 100, including endpoint value；
The value range of second stackable unit number described in the p-type Distributed Bragg Reflection layer is 1-100, including Endpoint value；
A kind of preparation method of vertical cavity surface emitting laser epitaxial structure, the preparation method include:
Buffer layer is formed in the first side surface of substrate；
N-type Distributed Bragg Reflection layer, the N-type distribution cloth are formed away from the one side of substrate in the buffer layer Glug reflecting layer includes multiple first stackable units of stacking；
The first limiting layer is formed away from the buffer layer side in the N-type Distributed Bragg Reflection layer；
First wave conducting shell is formed away from Distributed Bragg Reflection layer side in first limiting layer；
Quantum hydrazine luminescent layer is formed away from first limiting layer side in the first wave conducting shell；
Second waveguide layer is formed away from first wave conducting shell side in the quantum hydrazine luminescent layer；
The second limiting layer is formed away from the quantum hydrazine luminescent layer side in the second waveguide layer；
Oxide layer is formed away from second waveguide layer side in second limiting layer；
P-type Distributed Bragg Reflection layer, the p-type point are formed away from second limiting layer side in the oxide layer Cloth is multiple second stackable units that Bragg reflecting layer includes stacking；
Wherein, first stackable unit includes the first N-type transition zone of stacking, the second N-type transition zone, third N-type mistake Layer, the first N-type reflecting layer, the 4th N-type transition zone, the 5th N-type transition zone, the 6th N-type transition zone and the second N-type reflecting layer are crossed, The component of aluminium is gradient to Y2 by Y1 in the first N-type transition zone, and the component of aluminium is gradient to by Y2 in the second N-type transition zone Y3, the component of aluminium is gradient to Y4 by Y3 in the third N-type transition zone, and the group of aluminium is divided into Y4 in first N-type reflecting layer, institute The component for stating aluminium in the 4th N-type transition zone is gradient to Y3 by Y4, and the component of aluminium is gradient to by Y3 in the 5th N-type transition zone Y2, the component of aluminium is gradient to Y1 by Y2 in the 6th N-type transition zone, and the group of aluminium is divided into Y1, Y1 in second N-type reflecting layer It is less than Y2 less than Y3 and is less than Y4；
Second stackable unit includes the first p-type reflecting layer and the second p-type reflecting layer of stacking, and first p-type is anti- The component for penetrating aluminium in layer is greater than the component of aluminium in second p-type reflecting layer.
Optionally, second stackable unit further include:
Between first p-type reflecting layer and the oxide layer, the first p-type transition zone for being stacked, the second p-type Transition zone, third p-type transition zone, the component of aluminium is gradient to Y2, the second p-type transition by Y1 in the first p-type transition zone The component of aluminium is gradient to Y3 by Y2 in layer, and the component of aluminium is gradient to Y4, first p-type by Y3 in the third p-type transition zone The group of aluminium is divided into Y4 in reflecting layer；
Between first p-type reflecting layer and second p-type reflecting layer, the 4th p-type transition zone that is stacked, 5th p-type transition zone and the 6th p-type transition zone, the component of aluminium is gradient to Y3 by Y4 in the 4th p-type transition zone, and the described 5th The component of aluminium is gradient to Y2 by Y3 in p-type transition zone, and the component of aluminium is gradient to Y1 by Y2 in the 6th p-type transition zone, described The group of aluminium is divided into Y1 in second p-type reflecting layer.
Optionally, the growing environment of the N-type Bragg reflecting layer and the p-type Bragg reflecting layer includes nitrogen environment At least one of with hydrogen environment.
This programme has the advantage that
In vertical cavity surface emitting laser epitaxial structure provided by the present invention, the N-type DBR layer by Al constituent content not Same AlYGa1-YAs composition, different AlYGa1-YThe barrier junction of As interlayer reduces, and utilizes adjacent AlYGa1-YAnswering between As layers Power variation stretches barrier height, so that the barrier junction overall depth of the N-type DBR layer shoals, to reduce the N-type DBR layer Series connection resistance value, reduce the voltage at N-type DBR layer both ends, reduce the threshold current of the DBR layer, so that electric current is in N-type Thermal losses that is less, and then reducing the epitaxial structure is consumed in DBR layer, improve the epitaxial structure power conversion efficiency and Slope efficiency.And the Al of difference Al componentYGa1-YStep is formed between As, barrier potential difference reduces, and so that electronics is easier transition, electricity Son increases with hole-recombination logarithm, so that particle inverted population be made to increase, improves gain, while reducing the generation of heat.
Detailed description of the invention
It, below will be to embodiment or existing for the clearer technical solution for illustrating the embodiment of the present invention or the prior art Attached drawing needed in technical description is briefly described, it should be apparent that, the accompanying drawings in the following description is only this hair Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the structural schematic diagram of vertical cavity surface emitting laser epitaxial structure provided by one embodiment of the invention；
Fig. 2 is the first stackable unit in vertical cavity surface emitting laser epitaxial structure provided by one embodiment of the invention Structural schematic diagram；
Fig. 3 is in one embodiment of the invention, first in the first epitaxial structure, the second epitaxial structure and third epitaxial structure The energy band of stackable unit with its growth thickness variation relation curve graph；Wherein, curve a is the first stacking in the first epitaxial structure The energy band of unit with its growth thickness variation relation curve graph, b be the second epitaxial structure in the first stackable unit energy band with The variation relation curve graph of its growth thickness, c are the energy band of the first stackable unit in the first epitaxial structure with its growth thickness Variation relation curve graph；
Fig. 4 is the second stackable unit in vertical cavity surface emitting laser epitaxial structure provided by one embodiment of the invention Structural schematic diagram；
Fig. 5 is the preparation method process of vertical cavity surface emitting laser epitaxial structure provided by one embodiment of the invention Figure.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other Embodiment shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
Just as described in the background section, the threshold current of existing VCSEL is larger.
Inventor is the study found that this is because generally include the high reflection AlGaAs of superposition in the N-type DBR of existing VCSEL AlGaAs layers of layer and low reflection, wherein the group of Al is divided into 0.1 in described high reflection AlGaAs layers, Al in AlGaAs layers of low reflection Group be divided into 0.9 so that between AlGaAs layers of AlGaAs layers of high reflection and low reflection have biggish barrier junction, to lead It causes the resistance value of VCSEL higher, keeps the voltage of VCSEL higher, electric current consumes excessively in DBR, causes the threshold current of VCSEL It is larger, in addition, also will affect the power conversion rate and slope efficiency of VCSEL.
In view of this, the embodiment of the invention provides a kind of vertical cavity surface emitting laser epitaxial structures, as shown in Figure 1, The epitaxial structure includes:
Substrate 10；
Buffer layer 20 positioned at 10 first side surface of substrate；
Deviate from the N-type Distributed Bragg Reflection layer 30 of 10 side of substrate, the N-type point positioned at the buffer layer 20 Cloth Bragg reflecting layer 30 includes multiple first stackable units of stacking；
Deviate from the first limiting layer 40 of 20 side of buffer layer positioned at the N-type Distributed Bragg Reflection layer 30；
Deviate from the first wave conducting shell 50 of 30 side of Distributed Bragg Reflection layer positioned at first limiting layer 40；
Deviate from the quantum hydrazine luminescent layer 60 of 40 side of the first limiting layer positioned at the first wave conducting shell 50；
Deviate from the second waveguide layer 70 of 50 side of first wave conducting shell positioned at the quantum hydrazine luminescent layer 60；
Deviate from the second limiting layer 80 of 60 side of quantum hydrazine luminescent layer positioned at the second waveguide layer 70；
Deviate from the oxide layer 90 of 70 side of second waveguide layer positioned at second limiting layer 80；
Deviate from the p-type Distributed Bragg Reflection layer 100 of 80 side of the second limiting layer, institute positioned at the oxide layer 90 Stating p-type distribution is multiple second stackable units that Bragg reflecting layer 100 includes stacking；
Wherein, first stackable unit includes the first N-type transition zone of stacking, the second N-type transition zone, third N-type mistake Layer, the first N-type reflecting layer, the 4th N-type transition zone, the 5th N-type transition zone, the 6th N-type transition zone and the second N-type reflecting layer are crossed, The component of aluminium is gradient to Y2 by Y1 in the first N-type transition zone, and the component of aluminium is gradient to by Y2 in the second N-type transition zone Y3, the component of aluminium is gradient to Y4 by Y3 in the third N-type transition zone, and the group of aluminium is divided into Y4 in first N-type reflecting layer, institute The component for stating aluminium in the 4th N-type transition zone is gradient to Y3 by Y4, and the component of aluminium is gradient to by Y3 in the 5th N-type transition zone Y2, the component of aluminium is gradient to Y1 by Y2 in the 6th N-type transition zone, and the group of aluminium is divided into Y1, Y1 in second N-type reflecting layer It is less than Y2 less than Y3 and is less than Y4；
Second stackable unit includes the first p-type reflecting layer and the second p-type reflecting layer of stacking, and first p-type is anti- The component for penetrating aluminium in layer is greater than the component of aluminium in second p-type reflecting layer.
Optionally, in embodiments of the present invention, the N-type transition zone is N-type AlGaAs layers.
It can be seen that in vertical cavity surface emitting laser epitaxial structure provided by the embodiment of the present invention, the N-type distribution Formula Bragg reflecting layer not only includes the first N-type reflecting layer and the second N-type reflecting layer, further includes being located at first N-type to reflect First N-type transition zone, second N-type transition zone and third N-type transition zone and position of the layer between second N-type reflecting layer The 4th N-type transition zone, the 5th N-type transition zone and the 6th N-type between first N-type reflecting layer and the second N-type reflecting layer Transition zone, wherein the component of aluminium is gradient to Y2 by Y1 in the first N-type transition zone, the group of aluminium in the second N-type transition zone Divide and Y3 is gradient to by Y2, the component of aluminium is gradient to Y4, aluminium in first N-type reflecting layer by Y3 in the third N-type transition zone Group be divided into Y4, the component of aluminium is gradient to Y3 by Y4 in the 4th N-type transition zone, the group of aluminium in the 5th N-type transition zone Divide and Y2 is gradient to by Y3, the component of aluminium is gradient to Y1, aluminium in second N-type reflecting layer by Y2 in the 6th N-type transition zone Group be divided into Y1, Y1, which is less than Y3 and is less than Y2, is less than Y4 so that in the N-type Distributed Bragg Reflection layer Al component by Y1 is raised to during Y4 drops to Y1 by Y4 again, using the change of component of step, is first gradient to Y2 by Y1, is gradient to by Y2 Y3 is gradient to Y4 by Y3, then is gradient to Y3 by Y4, is gradient to Y2 by Y3, is finally gradient to Y1 by Y2, Al (Y1) and Al (Y2) Between generate smaller barrier junction, smaller barrier junction is generated between Al (Y2) and Al (Y3), between Al (Y3) and Al (Y4) generate compared with Small barrier junction to reduce the barrier junction between adjacent transition layer, and utilizes adjacent N-type transition zone or N-type transition zone and its phase Stress variation between adjacent N-type reflecting layer stretches barrier height, so that the barrier junction of the N-type Bragg reflecting layer is whole deep Degree shoals, to reduce the series connection resistance value of the N-type Bragg reflecting layer, reduces the electricity at N-type Bragg reflecting layer both ends Pressure, reduce the threshold current of the N-type Bragg reflecting layer so that electric current consumed in the N-type Bragg reflecting layer it is less, And then reduce the thermal losses of the epitaxial structure, improve the power conversion efficiency and slope efficiency of the epitaxial structure.
It should be noted that since the factor for influencing the first stackable unit overall resistance includes the first stackable unit Series connection resistance value and first stackable unit doping concentration, and in the embodiment of the present invention, first stackable unit Resistance value of connecting reduces, therefore, under the premise of overall resistance is identical, in the embodiment of the present invention, in first stackable unit Doping concentration can be smaller, to reduce the background of first stackable unit, reduce the loss of first stackable unit, Improve gain.
In addition, due to the group of Al be divided into 0.1 AlGaAs layer and Al group be divided between 0.9 AlGaAs layer have it is higher Barrier potential difference, electronics is difficult transition, to be limited in barrier junction, can generate a large amount of heat, and the embodiment of the present invention is provided Epitaxial structure in, the first N-type reflecting layer described in the N-type Bragg reflecting layer away from second N-type impurity and There are multiple N-type transition zones, thus using each N-type transition zone in institute between first N-type reflecting layer and the second N-type reflecting layer It states and forms multiple steps between the first N-type reflecting layer and second N-type reflecting layer, so that the N-type Bragg reflecting layer In electronics be easier occur transition so that in the epitaxial structure electrons and holes it is compound to become it is more so that it is described outside Prolong population inversion in structure and become more, improves gain.
Based on any of the above embodiments, in one embodiment of the invention, the first N-type transition zone, third N-type The gradient ramp of aluminium component meets the sine curve in 1/4 period, the second N-type transition zone, the in transition zone, the 5th N-type transition zone The gradient ramp of aluminium component meets the cosine curve in 1/4 period in four N-type transition zones, the 6th N-type transition zone, so that the N The change of component of aluminium is smoother in each transition zone in type Bragg reflecting layer, further decreases the N-type Bragg reflecting layer Series connection resistance value, reduces the voltage at N-type Bragg reflecting layer both ends, reduces the threshold current of the N-type Bragg reflecting layer, So that electric current consumes thermal losses that is less, and then reducing the epitaxial structure in the N-type Bragg reflecting layer, described in raising The power conversion efficiency and slope efficiency of epitaxial structure, while making electrons and holes in the epitaxial structure compound more to change, So that population inversion becomes more in the epitaxial structure, gain is improved.
Specifically, in one embodiment of the invention, Y1 0.1, Y4 0.9, in a kind of specific reality of the present embodiment In existing mode, Y2 0.6, Y3 0.4, but the present invention is to this and without limitation, specifically depends on the circumstances, as long as guaranteeing that Y1 is less than Y3 is less than Y2 and is less than Y4.
As shown in figure 3, Fig. 3 shows the first stacking in the first epitaxial structure, the second epitaxial structure and third epitaxial structure The energy band of unit with its growth thickness variation relation curve graph；Wherein, curve a is the first stackable unit in the first epitaxial structure Energy band with its growth thickness variation relation curve graph, b be the second epitaxial structure in the first stackable unit energy band with its life The variation relation curve graph of long thickness, c are the energy band of the first stackable unit in the first epitaxial structure with the variation of its growth thickness Graph of relation.
Specifically, removing the first heap in first epitaxial structure, second epitaxial structure and the third epitaxial structure Folded unit is different outer, and other parts are all the same, wherein
The first stackable unit includes the first N-type reflecting layer and the second N-type reflecting layer of stacking in first epitaxial structure, In, the group of aluminium is divided into 0.9 in the first N-type reflecting layer, and the group of aluminium is divided into 0.1 in the second N-type reflecting layer；
The first stackable unit in second epitaxial structure is aluminium content gradually variational structure, comprising: the first N-type transition zone, Second N-type transition zone, third N-type transition zone, the first N-type reflecting layer, the 4th N-type transition zone, the 5th N-type transition zone, the 6th N-type Transition zone and the second N-type reflecting layer, wherein the component of aluminium is gradient to the 0.3, second N-type transition by 0.1 in the first N-type transition zone The component that the component of aluminium is gradient to aluminium in 0.6, third N-type transition zone by 0.3 in layer is gradient to the reflection of the 0.9, first N-type by 0.6 The group of aluminium is divided into the group that the component of aluminium in the 0.9, the 4th N-type transition zone is gradient to aluminium in the 0.6, the 5th N-type transition zone by 0.9 in layer Point by 0.6 be gradient to the component of aluminium in the 0.3, the 6th N-type transition zone by 0.3 be gradient to 0.1 and second aluminium in N-type reflecting layer group It is divided into 0.1；
The first stackable unit is aluminium component pull-type structure in the third epitaxial structure, comprising: the first N-type transition zone, Second N-type transition zone, third N-type transition zone, the first N-type reflecting layer, the 4th N-type transition zone, the 5th N-type transition zone, the 6th N-type Transition zone and the second N-type reflecting layer, wherein the component of aluminium is gradient to the 0.6, second N-type transition by 0.1 in the first N-type transition zone The component that the component of aluminium is gradient to aluminium in 0.4, third N-type transition zone by 0.6 in layer is gradient to the reflection of the 0.9, first N-type by 0.4 The group of aluminium is divided into the group that the component of aluminium in the 0.9, the 4th N-type transition zone is gradient to aluminium in the 0.4, the 5th N-type transition zone by 0.9 in layer Point by 0.4 be gradient to the component of aluminium in the 0.6, the 6th N-type transition zone by 0.6 be gradient to 0.1 and second aluminium in N-type reflecting layer group It is divided into 0.1.
From the figure 3, it may be seen that compared to the first epitaxial structure, the second epitaxial structure, in the third epitaxial structure, described first Difference between the energy band maximum value and minimum value of stackable unit is minimum, i.e., the first stackable unit in the described third epitaxial structure Barrier junction is minimum.
Based on any of the above embodiments, in one embodiment of the invention, the first N-type transition zone, institute State the second N-type transition zone, the third N-type transition zone, the 4th N-type transition zone, the 5th N-type transition zone and described The thickness of six N-type transition zones is identical.Optionally, in one embodiment of the invention, the thickness of the first N-type transition zone takes Value range is 1-10nm, including endpoint value；But the present invention is to this and without limitation, specifically depends on the circumstances.
Based on any of the above embodiments, in one embodiment of the invention, the N-type distributed Bragg is anti- The value range for penetrating the first stackable unit number described in layer is 1-100, including endpoint value；But the present invention does not limit this It is fixed, specifically depend on the circumstances.
If in the p-type DBR of VCSEL only including AlGaAs layers of AlGaAs layers of the high reflection and low reflection of superposition, wherein institute The group for stating Al in AlGaAs layers of high reflection is divided into 0.1, and the group of Al is divided into 0.9 in low AlGaAs layers of reflection, can also make high reflection There is biggish barrier junction between AlGaAs layers and AlGaAs layers of low reflection, it is higher so as to cause the resistance value of VCSEL, make The voltage of VCSEL is higher, and electric current consumes excessively in DBR, causes the threshold current of VCSEL larger, and the power for influencing VCSEL turns Change rate and slope efficiency.
Based on any of the above embodiments, in one embodiment of the invention, as shown in figure 4, second heap Folded unit further include:
Between first p-type reflecting layer 1004 and the oxide layer 90, the first p-type transition zone for being stacked 1001, the second p-type transition zone 1002, third p-type transition zone 1003, the component of aluminium is by Y1 in the first p-type transition zone 1001 It is gradient to Y2, the component of aluminium is gradient to Y3 by Y2 in the second p-type transition zone 1002, in the third p-type transition zone 1003 The component of aluminium is gradient to Y4 by Y3, and the group of aluminium is divided into Y4 in first p-type reflecting layer 1004；
Between first p-type reflecting layer 1004 and second p-type reflecting layer 1008, the 4th P that is stacked Type transition zone 1005, the 5th p-type transition zone 1006 and the 6th p-type transition zone 1007, aluminium in the 4th p-type transition zone 1005 Component is gradient to Y3 by Y4, and the component of aluminium is gradient to Y2, the 6th p-type transition by Y3 in the 5th p-type transition zone 1006 The component of aluminium is gradient to Y1 by Y2 in layer 1007, and the group of aluminium is divided into Y1 in second p-type reflecting layer.
Optionally, in embodiments of the present invention, the p-type transition zone is p-type AlGaAs layers.
In embodiments of the present invention, the p-type Distributed Bragg Reflection layer not only includes the first p-type reflecting layer and second P-type reflecting layer further includes the first p-type transition positioned at first p-type reflecting layer between second p-type reflecting layer Layer, the second p-type transition zone and third p-type transition zone and between first p-type reflecting layer and the second p-type reflecting layer 4th p-type transition zone, the 5th p-type transition zone and the 6th p-type transition zone, wherein in the first p-type transition zone the component of aluminium by Y1 is gradient to Y2, and the component of aluminium is gradient to Y3 by Y2 in the second p-type transition zone, the group of aluminium in the third p-type transition zone Y4 is gradient to point by Y3, the group of aluminium is divided into Y4 in first p-type reflecting layer, in the 4th p-type transition zone component of aluminium by Y4 is gradient to Y3, and the component of aluminium is gradient to Y2 by Y3 in the 5th p-type transition zone, the group of aluminium in the 6th p-type transition zone To divide and Y1 is gradient to by Y2, the group of aluminium is divided into Y1 in second p-type reflecting layer, and Y1 is less than Y3 and is less than Y2 less than Y4, so that The component of Al is raised to during Y4 drops to Y1 by Y4 again by Y1 in the p-type Distributed Bragg Reflection layer, using step Change of component, Y2 is first gradient to by Y1, Y3 is gradient to by Y2, Y4 is gradient to by Y3, then Y3 is gradient to by Y4, is gradient to by Y3 Y2 is finally gradient to Y1 by Y2, and smaller barrier junction is generated between Al (Y1) and Al (Y2), between Al (Y2) and Al (Y3) generate compared with Small barrier junction generates smaller barrier junction between Al (Y3) and Al (Y4), to reduce the barrier junction between adjacent transition layer, and benefit Barrier height is stretched with the stress variation between adjacent p-type transition zone or p-type transition zone p-type reflecting layer adjacent thereto, so that The barrier junction overall depth of the p-type Bragg reflecting layer shoals, to reduce the series connection resistance of the p-type Bragg reflecting layer Value, reduces the voltage at p-type Bragg reflecting layer both ends, reduces the threshold current of the p-type Bragg reflecting layer, so that electric Stream consumes less in the p-type Bragg reflecting layer, further decreases the thermal losses of the epitaxial structure, thus described in improving The power conversion efficiency and slope efficiency of epitaxial structure.
Moreover, in epitaxial structure provided by the embodiment of the present invention, the first p-type described in the p-type Bragg reflecting layer Reflecting layer, which deviates from, has multiple P between the second p-type emission layer and first p-type reflecting layer and the second p-type reflecting layer Type transition zone, to be formed between first p-type reflecting layer and second p-type reflecting layer using each p-type transition zone more A step, so that the easier generation transition in hole in the p-type Bragg reflecting layer, further such that the epitaxy junction Electrons and holes are compound to becoming more in structure, so that population inversion becomes more in the epitaxial structure, improve gain.
Based on any of the above embodiments, in one embodiment of the invention, the first p-type transition zone, third p-type The gradient ramp of aluminium component meets the sine curve in 1/4 period, the second p-type transition zone, the in transition zone, the 5th p-type transition zone The gradient ramp of aluminium component meets the cosine curve in 1/4 period in four p-type transition zones, the 6th p-type transition zone, so that the P The change of component of aluminium is smoother in each transition zone in type Bragg reflecting layer, further decreases the p-type Bragg reflecting layer Series connection resistance value, reduces the voltage at p-type Bragg reflecting layer both ends, reduces the threshold current of the p-type Bragg reflecting layer, So that electric current consumes thermal losses that is less, and then reducing the epitaxial structure in the p-type Bragg reflecting layer, described in raising The power conversion efficiency and slope efficiency of epitaxial structure, while making electrons and holes in the epitaxial structure compound more to change, So that population inversion becomes more in the epitaxial structure, gain is improved.
Specifically, in one embodiment of the invention, Y1 0.1, Y4 0.9, in a kind of specific reality of the present embodiment In existing mode, Y2 0.6, Y3 0.4, but the present invention is to this and without limitation, specifically depends on the circumstances, as long as guaranteeing that Y1 is less than Y3 is less than Y2 and is less than Y4.
Based on any of the above embodiments, in one embodiment of the invention, the first p-type transition zone, institute State the second p-type transition zone, the third p-type transition zone, the 4th p-type transition zone, the 5th p-type transition zone and described The thickness of six p-type transition zones is identical.Optionally, in one embodiment of the invention, the thickness of the first p-type transition zone takes Value range is 1-10nm, including endpoint value；But the present invention is to this and without limitation, specifically depends on the circumstances.
Based on any of the above embodiments, in one embodiment of the invention, the p-type distributed Bragg is anti- The value range for penetrating the second stackable unit number described in layer is 1-100, including endpoint value；But the present invention does not limit this It is fixed, specifically depend on the circumstances.
Based on any of the above embodiments, in one embodiment of the invention, the epitaxial structure further include: position In the p-type Bragg reflecting layer away from the p-type cap (i.e. P-cap layers) of the side of the oxide layer, but the present invention is to this And without limitation, it specifically depends on the circumstances.
Correspondingly, the embodiment of the invention also provides a kind of preparation method of vertical cavity surface emitting laser epitaxial structure, The preparation method is used to prepare epitaxial structure provided by any of the above-described embodiment.As shown in figure 5, the preparation method includes:
S1: buffer layer is formed in the first side surface of substrate.Optionally, in one embodiment of the invention, the substrate For GaAs substrate, the buffer layer is GaAs buffer layer.
On the basis of the above embodiments, in one embodiment of the invention, it is formed and is buffered in the first side surface of substrate Layer include:
In the first temperature, first pressure environment, the buffer layer of first thickness is formed in the substrate surface.
Specifically, in one embodiment of the invention, the value range of first temperature is 600 DEG C -700 DEG C, packet Include endpoint value；The first pressure is 50mbr；The value range of the first thickness is 10-25nm, including holds endpoint value, but The present invention to this and without limitation, specifically depends on the circumstances.
S2: N-type Distributed Bragg Reflection (DBR) layer, the N-type are formed away from the one side of substrate in the buffer layer Distributed Bragg Reflection layer includes multiple first stackable units of stacking.Wherein, first stackable unit includes stacking First N-type transition zone, the second N-type transition zone, third N-type transition zone, the first N-type reflecting layer, the 4th N-type transition zone, the 5th N-type Transition zone, the 6th N-type transition zone and the second N-type reflecting layer, the component of aluminium is gradient to Y2 by Y1 in the first N-type transition zone, The component of aluminium is gradient to Y3 by Y2 in the second N-type transition zone, and the component of aluminium is gradient to by Y3 in the third N-type transition zone Y4, the group of aluminium is divided into Y4 in first N-type reflecting layer, and the component of aluminium is gradient to Y3 by Y4 in the 4th N-type transition zone, institute The component for stating aluminium in the 5th N-type transition zone is gradient to Y2 by Y3, and the component of aluminium is gradient to by Y2 in the 6th N-type transition zone Y1, the group of aluminium is divided into Y1 in second N-type reflecting layer, and Y1, which is less than Y3 and is less than Y2, is less than Y4.
Optionally, the growth temperature value range of the N-type Bragg reflecting layer is 660 DEG C -780 DEG C, including endpoint value.
In one embodiment of the invention, the forming method of first stackable unit includes:
S21: the first N-type transition zone is formed away from the one side of substrate in the buffer layer.Optionally, first N-type The doping concentration range of transition zone is 5E17-5E18, but the present invention is to this and without limitation, specifically depends on the circumstances.
Specifically, in one particular embodiment of the present invention, the component of aluminium is by Y1 gradual change in the first N-type transition zone To Y2, the growth pressure of the first N-type transition zone is 50mbr, and growth temperature is 730 DEG C, growth thickness 5nm, is adulterated dense Spending is 2.5E18, i.e., 2.5 × 1018.But the present invention is to this and without limitation, specifically depends on the circumstances.
S22: the second N-type transition zone is formed away from the buffer layer side in the first N-type transition zone.Optionally, institute The doping concentration range for stating the second N-type transition zone is 3E17-4E18, but the present invention is to this and without limitation, specifically optionally and It is fixed.
Specifically, in one particular embodiment of the present invention, the component of aluminium is by Y2 gradual change in the second N-type transition zone To Y3, the growth pressure of the second N-type transition zone is 50mbr, and growth temperature is 730 DEG C, growth thickness 5nm, is adulterated dense Degree is 2E18.But the present invention is to this and without limitation, specifically depends on the circumstances.
S23: third N-type transition zone is formed away from the first N-type transition zone side in the second N-type transition zone.It can Choosing, the doping concentration value range of the third N-type transition zone is 3E17-1.5E18, but the present invention is to this and without limitation, Specifically depend on the circumstances.
Specifically, in one particular embodiment of the present invention, the component of aluminium is by Y3 gradual change in the third N-type transition zone To Y4, the growth pressure of the third N-type transition zone is 50mbr, and growth temperature is 730 DEG C, growth thickness 5nm, is adulterated dense Degree is 1.5E18.But the present invention is to this and without limitation, specifically depends on the circumstances.
S24: the first N-type reflecting layer is formed away from the second N-type transition zone side in the third N-type transition zone.It can Choosing, the doping concentration value range in first N-type reflecting layer is 5E17-5E18, but the present invention is to this and without limitation, has Body depends on the circumstances.
Specifically, in one particular embodiment of the present invention, the group of aluminium is divided into Y4 in first N-type reflecting layer, institute The growth pressure for stating the first N-type reflecting layer is 50mbr, and growth temperature is 730 DEG C, growth thickness 63nm, and doping concentration is 1E18.But the present invention is to this and without limitation, specifically depends on the circumstances.
S25: the 4th N-type transition zone is formed away from the third N-type transition zone side in first N-type reflecting layer.It can Choosing, the doping concentration value range of the 4th N-type transition zone is 3E17-1.5E18, but the present invention is to this and without limitation, Specifically depend on the circumstances.
Specifically, in one particular embodiment of the present invention, the component of aluminium is by Y4 gradual change in the 4th N-type transition zone To Y3, the growth pressure of the 4th N-type transition zone is 50mbr, and growth temperature is 730 DEG C, growth thickness 5nm, is adulterated dense Degree is 1.5E18.But the present invention is to this and without limitation, specifically depends on the circumstances.
S26: the 5th N-type transition zone is formed away from first N-type reflecting layer side in the 4th N-type transition zone.It can Choosing, the doping concentration value range of the 5th N-type transition zone is 3E17-4E18, but the present invention is to this and without limitation, has Body depends on the circumstances.
Specifically, in one particular embodiment of the present invention, the component of aluminium is by Y3 gradual change in the 5th N-type transition zone To Y2, the growth pressure of the 5th N-type transition zone is 50mbr, and growth temperature is 730 DEG C, growth thickness 5nm, is adulterated dense Degree is 2E18.But the present invention is to this and without limitation, specifically depends on the circumstances.
S27: the 6th N-type transition zone is formed away from the 4th N-type transition zone side in the 5th N-type transition zone.It can Choosing, the doping concentration value range of the 6th N-type transition zone is 5E17-5E18, but the present invention is to this and without limitation, has Body depends on the circumstances.
Specifically, in one particular embodiment of the present invention, the component of aluminium is by Y2 gradual change in the 6th N-type transition zone To Y1, the growth pressure of the 6th N-type transition zone is 50mbr, and growth temperature is 730 DEG C, growth thickness 5nm, is adulterated dense Degree is 2.5E18.But the present invention is to this and without limitation, specifically depends on the circumstances.
S28: the second N-type reflecting layer is formed away from the 5th N-type transition zone side in the 6th N-type transition zone.It can Choosing, the doping concentration value range in second N-type reflecting layer is 5E17-5E18, but the present invention is to this and without limitation, has Body depends on the circumstances.
Specifically, in one particular embodiment of the present invention, the group of aluminium is divided into Y1 in second N-type reflecting layer, institute The growth pressure for stating the second N-type reflecting layer is 50mbr, and growth temperature is 730 DEG C, growth thickness 63nm, and doping concentration is 3E18.But the present invention is to this and without limitation, specifically depends on the circumstances.
Based on any of the above embodiments, in one embodiment of the invention, the N-type Bradley format reflecting layer Described in the growth cycle value range of the first stackable unit be 1-100, including endpoint value, but the present invention does not limit this It is fixed, specifically depend on the circumstances.
Based on any of the above embodiments, in one embodiment of the invention, the N-type Bragg reflecting layer With a thickness of 4 microns, but the present invention is to this and without limitation, specifically depends on the circumstances.
Based on any of the above embodiments, in one embodiment of the invention, 0.1 Y1, Y4 0.9, at this In a kind of specific implementation of embodiment, Y2 0.6, Y3 0.4, but the present invention is to this and without limitation, specifically optionally Depending on, as long as guaranteeing that Y1 is less than Y3 and is less than Y2 less than Y4.
Based on any of the above embodiments, in one embodiment of the invention, the first N-type transition zone, third N-type The gradient ramp of aluminium component meets the sine curve in 1/4 period, the second N-type transition zone, the in transition zone, the 5th N-type transition zone The gradient ramp of aluminium component meets the cosine curve in 1/4 period in four N-type transition zones, the 6th N-type transition zone, so that the N The change of component of aluminium is smoother in each transition zone in type Bragg reflecting layer.
Specifically, on the basis of the above embodiments, in one embodiment of the invention, the first stackable unit system The flow that is passed through of silicon source meets during standby: Y=a+bcosX, to realize the first N-type transition zone, the second N-type transition In layer, the third N-type transition zone, the 4th N-type transition zone, the 5th N-type transition zone and the 6th N-type transition zone The change of Al component.Wherein, Y be the first N-type transition zone, the second N-type transition zone, the third N-type transition zone, institute State the 4th N-type transition zone, required silicon source stream in the 5th N-type transition zone or the 6th N-type transition zone growth course Amount；A is fixed numbers, is chosen as the first N-type transition zone, the second N-type transition zone, the third N-type transition zone, institute State the 4th N-type transition zone, required silicon source flow in the 5th N-type transition zone or the 6th N-type transition zone growth Originate flow value；CosX is cosine coefficient；B is cosine multiple.Wherein, the first N-type transition zone, third N-type transition zone, the 5th N In the growth course of type transition zone, the value range of X is [- pi/2~0]；Second N-type transition zone, the 4th N-type transition zone, the 6th N In the growth course of type transition zone, the value range of X is [0~(- pi/2)].
By taking the growth course of the first N-type transition zone as an example, Y is required in the first N-type transition zone growth course The silicon source flow wanted；A is fixed numbers, is chosen as the starting of required silicon source flow in the first N-type transition zone growth Flow value, the i.e. group of aluminium are divided into required silicon source flow value when 0.1, and the value range of X is [- pi/2~0]；
By taking the growth course of the second N-type transition zone as an example, Y is required in the second N-type transition zone growth course The silicon source flow wanted；A is fixed numbers, is chosen as the starting of required silicon source flow in the second N-type transition zone growth Flow value, the i.e. group of aluminium are divided into required silicon source flow value when 0.6, and the value range of X is [0~(- pi/2)].
Based on any of the above embodiments, in one embodiment of the invention, the N-type Bragg reflecting layer Growing environment includes nitrogen environment, i.e., the described N-type Bragg reflecting layer is grown in nitrogen environment；In another reality of the invention It applies in example, the growing environment of the N-type Bragg reflecting layer includes hydrogen environment, i.e., the described N-type Bragg reflecting layer is in hydrogen It is grown in environment；In yet another embodiment of the present invention, the growing environment of the N-type Bragg reflecting layer includes nitrogen and hydrogen Gas, i.e., the described N-type Bragg reflecting layer are grown in the environment that nitrogen and hydrogen mix.The present invention to this and without limitation, only The growing environment for wanting the N-type Bragg reflecting layer includes at least one of nitrogen environment and hydrogen environment.
S3: the first limiting layer is formed away from the buffer layer side in the N-type Distributed Bragg Reflection layer.
Optionally, in one embodiment of the invention, the value range of the growth temperature of first limiting layer is 650 DEG C -800 DEG C, growth pressure 50mbar, growth thickness 60nm；But the present invention is to this and without limitation, specifically depends on the circumstances.
S4: first wave conducting shell is formed away from Distributed Bragg Reflection layer side in first limiting layer.
Optionally, in one embodiment of the invention, the value range of the growth temperature of the first wave conducting shell is 650 DEG C -800 DEG C, growth pressure 50mbar, growth thickness 50nm；But the present invention is to this and without limitation, specifically depends on the circumstances.
S5: quantum hydrazine luminescent layer is formed away from first limiting layer side in the first wave conducting shell.
Optionally, in one embodiment of the invention, the value range of the growth temperature of the quantum hydrazine luminescent layer is 650 DEG C -800 DEG C, growth pressure 50mbar, growth thickness 45nm；But the present invention is to this and without limitation, specifically optionally and It is fixed.
S6: second waveguide layer is formed away from first wave conducting shell side in the quantum hydrazine luminescent layer.
Optionally, in one embodiment of the invention, the value range of the growth temperature of the second waveguide layer is 650 DEG C -800 DEG C, growth pressure 50mbar, growth thickness 50nm；But the present invention is to this and without limitation, specifically depends on the circumstances.
S7: the second limiting layer is formed away from the quantum hydrazine luminescent layer side in the second waveguide layer.
Optionally, in one embodiment of the invention, the value range of the growth temperature of second limiting layer is 650 DEG C -800 DEG C, growth pressure 50mbar, growth thickness 60nm；But the present invention is to this and without limitation, specifically depends on the circumstances.
S8: oxide layer is formed away from second waveguide layer side in second limiting layer
Optionally, in one embodiment of the invention, the value range of the growth temperature of the oxide layer be 650 DEG C- 800 DEG C, growth pressure 50mbar, growth thickness 100nm；But the present invention is to this and without limitation, specifically depends on the circumstances.
S9: forming p-type Distributed Bragg Reflection (DBR) layer away from second limiting layer side in the oxide layer, The p-type distribution is multiple second stackable units that Bragg reflecting layer includes stacking.Wherein, second stackable unit includes The the first p-type reflecting layer and the second p-type reflecting layer of stacking, the component of aluminium is greater than second p-type in first p-type reflecting layer The component of aluminium in reflecting layer.Optionally, the growth temperature value range of the p-type Bragg reflecting layer is 660 DEG C -780 DEG C, packet Include endpoint value.
Specifically, in another embodiment of the present invention, the forming method of second stackable unit includes: described Oxide layer forms the first p-type reflecting layer away from second limiting layer side；Deviate from the oxidation in first p-type reflecting layer The side of layer forms the second p-type reflecting layer.
On the basis of the above embodiments, in one embodiment of the invention, second stackable unit further include:
Between first p-type reflecting layer and the oxide layer, the first p-type transition zone for being stacked, the second p-type Transition zone, third p-type transition zone, the component of aluminium is gradient to Y2, the second p-type transition by Y1 in the first p-type transition zone The component of aluminium is gradient to Y3 by Y2 in layer, and the component of aluminium is gradient to Y4, first p-type by Y3 in the third p-type transition zone The group of aluminium is divided into Y4 in reflecting layer；
Between first p-type reflecting layer and second p-type reflecting layer, the 4th p-type transition zone that is stacked, 5th p-type transition zone and the 6th p-type transition zone, the component of aluminium is gradient to Y3 by Y4 in the 4th p-type transition zone, and the described 5th The component of aluminium is gradient to Y2 by Y3 in p-type transition zone, and the component of aluminium is gradient to Y1 by Y2 in the 6th p-type transition zone, described The group of aluminium is divided into Y1 in second p-type reflecting layer.
In embodiments of the present invention, the preparation method of second stackable unit includes:
S91: the first p-type transition zone is formed away from second limiting layer side in the oxide layer.Optionally, described The doping concentration value range of one p-type transition zone is 5E17-5E18, but the present invention is to this and without limitation, specifically optionally and It is fixed.
Specifically, in one particular embodiment of the present invention, the component of aluminium is by Y1 in the first p-type transition zone It is gradient to Y2, the growth pressure of the first p-type transition zone is 50mbr, and growth temperature is 730 DEG C, and growth thickness 5nm mixes Miscellaneous concentration is 5.5E18.But the present invention is to this and without limitation, specifically depends on the circumstances.
S92: the second p-type transition zone is formed away from the oxide skin(coating) side in the first p-type transition zone.Optionally, The doping concentration of the second p-type transition zone is 3E17-4E18, but the present invention is to this and without limitation, specifically depends on the circumstances.
Specifically, in one particular embodiment of the present invention, in the second p-type transition zone the component of aluminium by Y2 gradually Y3 is changed to, the growth pressure of the second p-type transition zone is 50mbr, and growth temperature is 730 DEG C, growth thickness 5nm, doping Concentration is 5E18.But the present invention is to this and without limitation, specifically depends on the circumstances.
S93: third p-type transition zone is formed away from the first p-type transition zone side in the second p-type transition zone.It can Choosing, the doping concentration value range of the third p-type transition zone is 3E17-1.5E18, but the present invention is to this and without limitation, Specifically depend on the circumstances.
Specifically, in one particular embodiment of the present invention, the component of aluminium is by Y3 gradual change in the third p-type transition zone To Y4, the growth pressure of the third p-type transition zone is 50mbr, and growth temperature is 730 DEG C, growth thickness 5nm, is adulterated dense Degree is 4.5E18.But the present invention is to this and without limitation, specifically depends on the circumstances.
S94: the first p-type reflecting layer is formed away from the second p-type transition zone side in the third p-type transition zone.It can Choosing, the doping concentration value range in first p-type reflecting layer is 5E17-5E18, but the present invention is to this and without limitation, has Body depends on the circumstances.
Specifically, in one particular embodiment of the present invention, the group of aluminium is divided into Y4 in first p-type reflecting layer, institute The growth pressure for stating the first p-type reflecting layer is 50mbr, and growth temperature is 730 DEG C, growth thickness 63nm, and doping concentration is 4E18.But the present invention is to this and without limitation, specifically depends on the circumstances.
S95: the 4th p-type transition zone is formed away from the third p-type transition zone side in first p-type reflecting layer.It can Choosing, the doping concentration value range of the 4th p-type transition zone is 3E17-1.5E18, but the present invention is to this and without limitation, Specifically depend on the circumstances.
Specifically, in one particular embodiment of the present invention, the component of aluminium is by Y4 gradual change in the 4th p-type transition zone To Y3, the growth pressure of the 4th p-type transition zone is 50mbr, and growth temperature is 730 DEG C, growth thickness 5nm, is adulterated dense Degree is 4.5E18.But the present invention is to this and without limitation, specifically depends on the circumstances.
S96: the 5th p-type transition zone is formed away from first p-type reflecting layer side in the 4th p-type transition zone.It can Choosing, the doping concentration value range of the 5th p-type transition zone is 3E17-4E18, but the present invention is to this and without limitation, has Body depends on the circumstances.
Specifically, in one particular embodiment of the present invention, the component of aluminium is by Y3 gradual change in the 5th p-type transition zone To Y2, the growth pressure of the 5th p-type transition zone is 50mbr, and growth temperature is 730 DEG C, growth thickness 5nm, is adulterated dense Degree is 5E18.But the present invention is to this and without limitation, specifically depends on the circumstances.
S97: the 6th p-type transition zone is formed away from the 4th p-type transition zone side in the 5th p-type transition zone.It can Choosing, the doping concentration value range of the 6th p-type transition zone is 5E17-5E18, but the present invention is to this and without limitation, has Body depends on the circumstances.
Specifically, in one particular embodiment of the present invention, the component of aluminium is by Y2 gradual change in the 6th p-type transition zone To Y1, the growth pressure of the 6th p-type transition zone is 50mbr, and growth temperature is 730 DEG C, growth thickness 5nm, is adulterated dense Degree is 5.5E18.But the present invention is to this and without limitation, specifically depends on the circumstances.
S98: forming the second p-type reflecting layer away from the side of the 5th p-type transition zone in the 6th p-type transition zone can Choosing, the doping concentration value range in second p-type reflecting layer is 5E17-5E18, but the present invention is to this and without limitation, has Body depends on the circumstances.
Specifically, in one particular embodiment of the present invention, the group of aluminium is divided into Y1 in second p-type reflecting layer, institute The growth pressure for stating the first p-type reflecting layer is 50mbr, and growth temperature is 730 DEG C, growth thickness 63nm, and doping concentration is 6E18.But the present invention is to this and without limitation, specifically depends on the circumstances.
Based on any of the above embodiments, in one embodiment of the invention, the p-type Bradley format reflecting layer Described in the growth cycle value range of the second stackable unit be 1-100, including endpoint value, but the present invention does not limit this It is fixed, specifically depend on the circumstances.
Based on any of the above embodiments, in one embodiment of the invention, the p-type Bragg reflecting layer With a thickness of 4 microns, but the present invention is to this and without limitation, specifically depends on the circumstances.
Based on any of the above embodiments, in one embodiment of the invention, 0.1 Y1, Y4 0.9, at this In a kind of specific implementation of embodiment, Y2 0.6, Y3 0.4, but the present invention is to this and without limitation, specifically optionally Depending on, as long as guaranteeing that Y1 is less than Y3 and is less than Y2 less than Y4.
Based on any of the above embodiments, in one embodiment of the invention, the first p-type transition zone, third p-type The gradient ramp of aluminium component meets the sine curve in 1/4 period, the second p-type transition zone, the in transition zone, the 5th p-type transition zone The gradient ramp of aluminium component meets the cosine curve in 1/4 period in four p-type transition zones, the 6th p-type transition zone, so that the P The change of component of aluminium is smoother in each transition zone in type Bragg reflecting layer.
Specifically, on the basis of the above embodiments, in one embodiment of the invention, the second stackable unit system The flow that is passed through of silicon source meets during standby: Y=a+bcosX, to realize the first p-type transition zone, the second p-type transition In layer, the third p-type transition zone, the 4th p-type transition zone, the 5th p-type transition zone and the 6th p-type transition zone The change of Al component.In the present embodiment, Y is the first p-type transition zone, the second p-type transition zone, the third p-type Required in transition zone, the 4th p-type transition zone, the 5th p-type transition zone or the 6th p-type transition zone growth course Silicon source flow；A is fixed numbers, is chosen as the first p-type transition zone, the second p-type transition zone, the third p-type Required aluminium in transition zone, the 4th p-type transition zone, the 5th p-type transition zone or the 6th p-type transition zone growth The starting flow value of source flux；CosX is cosine coefficient；B is cosine multiple.
Wherein, in the growth course of the first p-type transition zone, third p-type transition zone, the 5th p-type transition zone, the value model of X It encloses for [- pi/2~0]；Second p-type transition zone, the 4th p-type transition zone, the 6th p-type transition zone growth course in, the value model of X It encloses for [0~(- pi/2)].
By taking the growth course of the first p-type transition zone as an example, Y is required in the first p-type transition zone growth course The silicon source flow wanted；A is fixed numbers, is chosen as the starting of required silicon source flow in the first p-type transition zone growth Flow value, the i.e. group of aluminium are divided into required silicon source flow value when 0.1, and the value range of X is [- pi/2~0]；
By taking the growth course of the second p-type transition zone as an example, Y is required in the second p-type transition zone growth course The silicon source flow wanted；A is fixed numbers, is chosen as the starting of required silicon source flow in the second p-type transition zone growth Flow value, the i.e. group of aluminium are divided into required silicon source flow value when 0.6, and the value range of X is [0~(- pi/2)].
Based on any of the above embodiments, in one embodiment of the invention, the p-type Bragg reflecting layer Growing environment includes nitrogen environment, i.e., the described p-type Bragg reflecting layer is grown in nitrogen environment；In another reality of the invention It applies in example, the growing environment of the p-type Bragg reflecting layer includes hydrogen environment, i.e., the described p-type Bragg reflecting layer is in hydrogen It is grown in environment；In yet another embodiment of the present invention, the growing environment of the p-type Bragg reflecting layer includes nitrogen and hydrogen Gas, i.e., the described p-type Bragg reflecting layer are grown in the environment that nitrogen and hydrogen mix.The present invention to this and without limitation, only The growing environment for wanting the p-type Bragg reflecting layer includes at least one of nitrogen environment and hydrogen environment.
Based on any of the above embodiments, this method further include: S10: deviate from institute in the p-type Bragg reflecting layer The side for stating oxide layer forms p-type cap (i.e. P-cap layers).
Specifically, in one embodiment of the invention, the growth of the p-type cap is 650-800 DEG C only, growth Pressure 50mbar, growth thickness 50nm, the present invention to this and without limitation, specifically depend on the circumstances.
From the foregoing, it will be observed that vertical cavity surface emitting laser epitaxial structure and preparation method thereof provided by the embodiment of the present invention In, it further includes being located at institute that the N-type Distributed Bragg Reflection layer, which not only includes the first N-type reflecting layer and the second N-type reflecting layer, State first N-type transition zone, second N-type transition zone and threeth N of the first N-type reflecting layer between second N-type reflecting layer Type transition zone and the 4th N-type transition zone between first N-type reflecting layer and the second N-type reflecting layer, the 5th N-type mistake Cross layer and the 6th N-type transition zone, wherein the component of aluminium is gradient to Y2, second N-type by Y1 in the first N-type transition zone The component of aluminium is gradient to Y3 by Y2 in transition zone, and the component of aluminium is gradient to Y4 by Y3 in the third N-type transition zone, and described first The group of aluminium is divided into Y4 in N-type reflecting layer, and the component of aluminium is gradient to Y3, the 5th N-type mistake by Y4 in the 4th N-type transition zone The component for crossing aluminium in layer is gradient to Y2 by Y3, and the component of aluminium is gradient to Y1, the 2nd N by Y2 in the 6th N-type transition zone The group of aluminium is divided into Y1 in type reflecting layer, and Y1 is less than Y3 and is less than Y2 less than Y4, so that the N-type Distributed Bragg Reflection layer The component of middle Al is raised to during Y4 drops to Y1 by Y4 again by Y1, using the change of component of step, is first gradient to Y2 by Y1, Y3 is gradient to by Y2, Y4 is gradient to by Y3, then Y3 is gradient to by Y4, Y2 is gradient to by Y3, Y1 is finally gradient to by Y2, to subtract Barrier junction between small adjacent transition layer, and using adjacent N-type transition zone or N-type transition zone N-type reflecting layer adjacent thereto it Between stress variation stretch barrier height so that the barrier junction overall depth of the N-type Bragg reflecting layer shoals, to reduce The series connection resistance value of the N-type Bragg reflecting layer, reduces the voltage at N-type Bragg reflecting layer both ends, reduces the N-type cloth The threshold current in glug reflecting layer and then reduces the extension so that electric current consumes less in the N-type Bragg reflecting layer The thermal losses of structure improves the power conversion efficiency and slope efficiency of the epitaxial structure, and using each N-type transition zone described Multiple steps are formed between first N-type reflecting layer and second N-type reflecting layer, so that in the N-type Bragg reflecting layer The easier generation transition of electronics so that in the epitaxial structure electrons and holes it is compound to become it is more so that it is described outside Prolong population inversion in structure and become more, improves gain.
Similarly, the p-type Distributed Bragg Reflection layer not only includes the first p-type reflecting layer and the second p-type reflecting layer, is gone back Including being located at the first p-type transition zone, the second p-type transition that first p-type reflecting layer deviates between second p-type reflecting layer Layer and third p-type transition zone and the 4th p-type transition zone between first p-type reflecting layer and the second p-type reflecting layer, 5th p-type transition zone and the 6th p-type transition zone, wherein the component of aluminium is gradient to Y2 by Y1 in the first p-type transition zone, institute The component for stating aluminium in the second p-type transition zone is gradient to Y3 by Y2, and the component of aluminium is gradient to by Y3 in the third p-type transition zone Y4, the group of aluminium is divided into Y4 in first p-type reflecting layer, and the component of aluminium is gradient to Y3 by Y4 in the 4th p-type transition zone, institute The component for stating aluminium in the 5th p-type transition zone is gradient to Y2 by Y3, and the component of aluminium is gradient to by Y2 in the 6th p-type transition zone Y1, the group of aluminium is divided into Y1 in second p-type reflecting layer, and Y1, which is less than Y3 and is less than Y2, is less than Y4, so that the p-type is distributed The component of Al is raised to during Y4 drops to Y1 by Y4 again by Y1 in Bragg reflecting layer, using the change of component of step, first Y2 is gradient to by Y1, Y3 is gradient to by Y2, Y4 is gradient to by Y3, then Y3 is gradient to by Y4, Y2 is gradient to by Y3, finally gradually by Y2 Y1 is changed to, to reduce the barrier junction between adjacent transition layer, and adjacent thereto using adjacent p-type transition zone or p-type transition zone P-type reflecting layer between stress variation stretch barrier height so that the barrier junction overall depth of the p-type Bragg reflecting layer It shoals, to reduce the series connection resistance value of the p-type Bragg reflecting layer, reduces the voltage at p-type Bragg reflecting layer both ends, Reduce the threshold current of the p-type Bragg reflecting layer so that electric current consumed in the p-type Bragg reflecting layer it is less, into One step reduces the thermal losses of the epitaxial structure, so that the power conversion efficiency and slope efficiency of the epitaxial structure are improved, and Multiple steps are formed between first p-type reflecting layer and second p-type reflecting layer using each p-type transition zone, so that The easier generation transition in hole in the p-type Bragg reflecting layer, further such that electronics and sky in the epitaxial structure Cave is compound to becoming more, so that population inversion becomes more in the epitaxial structure, improves gain.
To sum up, in vertical cavity surface emitting laser epitaxial structure and preparation method thereof provided by the embodiment of the present invention, institute State the N-type DBR layer Al different by Al constituent content with the p-type DBR layerYGa1-YAs composition, different AlYGa1-YAs interlayer Barrier junction reduces, and utilizes adjacent AlYGa1-YStress variation between As layers stretches barrier height so that the N-type DBR layer and The barrier junction overall depth of the p-type DBR layer shoals, to reduce the series connection resistance of the N-type DBR layer and the p-type DBR layer Value, reduces the voltage of the N-type DBR layer and p-type DBR layer both ends, reduces the N-type DBR layer and the p-type DBR layer Threshold current so that electric current is less in N-type DBR layer and p-type DBR layer consumption, and then reduces the heat waste of the epitaxial structure Consumption, improves the power conversion efficiency and slope efficiency of the epitaxial structure.And the Al of difference Al componentYGa1-YIt is formed between As Step, barrier potential difference reduce, and so that electronics and hole is easier transition, electronics increases with hole-recombination logarithm, so that particle be made to invert Number increases, and improves gain, while reducing the generation of heat.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with it is other The difference of embodiment, same or similar part may refer to each other between each embodiment.For being filled disclosed in embodiment For setting, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is referring to method part Explanation.
Used herein a specific example illustrates the principle and implementation of the invention, and above embodiments are said It is bright to be merely used to help understand method and its core concept of the invention.It should be pointed out that for the ordinary skill of the art , without departing from the principle of the present invention, can be with several improvements and modifications are made to the present invention for personnel, these improvement It is also fallen within the protection scope of the claims of the present invention with modification.

Claims (10)

1. a kind of vertical cavity surface emitting laser epitaxial structure characterized by comprising
Substrate；
Buffer layer positioned at first side surface of substrate；
Deviate from the N-type Distributed Bragg Reflection layer of the one side of substrate, the N-type distributed Bragg positioned at the buffer layer Reflecting layer includes multiple first stackable units of stacking；
Deviate from the first limiting layer of the buffer layer side positioned at the N-type Distributed Bragg Reflection layer；
Deviate from the first wave conducting shell of Distributed Bragg Reflection layer side positioned at first limiting layer；
Deviate from the quantum hydrazine luminescent layer of first limiting layer side positioned at the first wave conducting shell；
Deviate from the second waveguide layer of first wave conducting shell side positioned at the quantum hydrazine luminescent layer；
Deviate from the second limiting layer of the quantum hydrazine luminescent layer side positioned at the second waveguide layer；
Deviate from the oxide layer of second waveguide layer side positioned at second limiting layer；
Deviate from the p-type Distributed Bragg Reflection layer of second limiting layer side positioned at the oxide layer, the p-type distribution is Bragg reflecting layer includes multiple second stackable units of stacking；
Wherein, first stackable unit include stacking the first N-type transition zone, the second N-type transition zone, third N-type transition zone, First N-type reflecting layer, the 4th N-type transition zone, the 5th N-type transition zone, the 6th N-type transition zone and the second N-type reflecting layer, described The component of aluminium is gradient to Y2 by Y1 in one N-type transition zone, and the component of aluminium is gradient to Y3 by Y2 in the second N-type transition zone, institute The component for stating aluminium in third N-type transition zone is gradient to Y4 by Y3, and the group of aluminium is divided into Y4 in first N-type reflecting layer, and described The component of aluminium is gradient to Y3 by Y4 in four N-type transition, and the component of aluminium is gradient to Y2 by Y3 in the 5th N-type transition, and described The component of aluminium is gradient to Y1 by Y2 in six N-type transition, and the group of aluminium is divided into Y1 in second N-type reflecting layer, and Y1 is less than less than Y3 Y2 is less than Y4；
Second stackable unit includes the first p-type reflecting layer and the second p-type reflecting layer of stacking, first p-type reflecting layer The component of middle aluminium is greater than the component of aluminium in second p-type reflecting layer.
2. epitaxial structure according to claim 1, which is characterized in that the first N-type transition zone, third N-type transition zone, the 5th The gradient ramp of aluminium component meets the sine curve in 1/4 period in N-type transition zone；
Second N-type transition zone, the 4th N-type transition zone, the gradient ramp of aluminium component met for 1/4 period in the 6th N-type transition zone Cosine curve.
3. epitaxial structure according to claim 1, which is characterized in that Y1 0.1, Y2 0.6, Y3 0.4, Y4 0.9.
4. epitaxial structure according to claim 1, which is characterized in that second stackable unit further include:
Between first p-type reflecting layer and the oxide layer, the first p-type transition zone for being stacked, the second p-type transition Layer, third p-type transition zone, the component of aluminium is gradient to Y2 by Y1 in the first p-type transition zone, in the second p-type transition zone The component of aluminium is gradient to Y3 by Y2, and the component of aluminium is gradient to Y4, the first p-type reflection by Y3 in the third p-type transition zone The group of aluminium is divided into Y4 in layer；
Between first p-type reflecting layer and second p-type reflecting layer, the 4th p-type transition zone that is stacked, the 5th P-type transition zone and the 6th p-type transition zone, the component of aluminium is gradient to Y3, the 5th p-type mistake by Y4 in the 4th p-type transition The component for crossing middle aluminium is gradient to Y2 by Y3, and the component of aluminium is gradient to Y1 by Y2 in the 6th p-type transition, and second p-type is anti- The group for penetrating aluminium in layer is divided into Y1.
5. epitaxial structure according to claim 4, which is characterized in that the first N-type transition zone, the second N-type mistake Cross layer, the third N-type transition zone, the 4th N-type transition zone, the 5th N-type transition zone and the 6th N-type transition zone Thickness it is identical；
The first p-type transition zone, the second p-type transition zone, the third p-type transition zone, the 4th p-type transition zone, The thickness of the 5th p-type transition zone and the 6th p-type transition zone is identical.
6. epitaxial structure according to claim 5, which is characterized in that the Thickness range of the first N-type transition zone For 1-10nm, including endpoint value；
The Thickness range of the first p-type transition zone is 1-10nm, including endpoint value.
7. epitaxial structure according to claim 1, which is characterized in that described in the N-type Distributed Bragg Reflection layer The value range of first stackable unit number is 1-100, including endpoint value；
The value range of second stackable unit number described in the p-type Distributed Bragg Reflection layer is 1-100, including endpoint Value.
8. a kind of preparation method of vertical cavity surface emitting laser epitaxial structure, which is characterized in that the preparation method includes:
Buffer layer is formed in the first side surface of substrate；
N-type Distributed Bragg Reflection layer, the N-type distributed Bragg are formed away from the one side of substrate in the buffer layer Reflecting layer includes multiple first stackable units of stacking；
The first limiting layer is formed away from the buffer layer side in the N-type Distributed Bragg Reflection layer；
First wave conducting shell is formed away from Distributed Bragg Reflection layer side in first limiting layer；
Quantum hydrazine luminescent layer is formed away from first limiting layer side in the first wave conducting shell；
Second waveguide layer is formed away from first wave conducting shell side in the quantum hydrazine luminescent layer；
The second limiting layer is formed away from the quantum hydrazine luminescent layer side in the second waveguide layer；
Oxide layer is formed away from second waveguide layer side in second limiting layer；
P-type Distributed Bragg Reflection layer is formed away from second limiting layer side in the oxide layer, the p-type distribution is Bragg reflecting layer includes multiple second stackable units of stacking；
Wherein, first stackable unit include stacking the first N-type transition zone, the second N-type transition zone, third N-type transition zone, First N-type reflecting layer, the 4th N-type transition zone, the 5th N-type transition zone, the 6th N-type transition zone and the second N-type reflecting layer, described The component of aluminium is gradient to Y2 by Y1 in one N-type transition zone, and the component of aluminium is gradient to Y3 by Y2 in the second N-type transition zone, institute The component for stating aluminium in third N-type transition zone is gradient to Y4 by Y3, and the group of aluminium is divided into Y4 in first N-type reflecting layer, and described The component of aluminium is gradient to Y3 by Y4 in four N-type transition zones, and the component of aluminium is gradient to Y2 by Y3 in the 5th N-type transition zone, institute The component for stating aluminium in the 6th N-type transition zone is gradient to Y1 by Y2, and the group of aluminium is divided into Y1 in second N-type reflecting layer, and Y1 is less than Y3 is less than Y2 and is less than Y4；
Second stackable unit includes the first p-type reflecting layer and the second p-type reflecting layer of stacking, first p-type reflecting layer The component of middle aluminium is greater than the component of aluminium in second p-type reflecting layer.
9. preparation method according to claim 8, which is characterized in that second stackable unit further include:
Between first p-type reflecting layer and the oxide layer, the first p-type transition zone for being stacked, the second p-type transition Layer, third p-type transition zone, the component of aluminium is gradient to Y2 by Y1 in the first p-type transition zone, in the second p-type transition zone The component of aluminium is gradient to Y3 by Y2, and the component of aluminium is gradient to Y4, the first p-type reflection by Y3 in the third p-type transition zone The group of aluminium is divided into Y4 in layer；
Between first p-type reflecting layer and second p-type reflecting layer, the 4th p-type transition zone that is stacked, the 5th P-type transition zone and the 6th p-type transition zone, the component of aluminium is gradient to Y3, the 5th p-type by Y4 in the 4th p-type transition zone The component of aluminium is gradient to Y2 by Y3 in transition zone, and the component of aluminium is gradient to Y1 by Y2 in the 6th p-type transition zone, and described second The group of aluminium is divided into Y1 in p-type reflecting layer.
10. epitaxial structure according to claim 8, which is characterized in that the N-type Bragg reflecting layer and the p-type cloth The growing environment in glug reflecting layer includes at least one of nitrogen environment and hydrogen environment.
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CN112397997A (en) * 2020-11-16 2021-02-23 扬州乾照光电有限公司 Semiconductor laser and manufacturing method thereof
CN112397997B (en) * 2020-11-16 2022-06-21 扬州乾照光电有限公司 Semiconductor laser and manufacturing method thereof

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