CN112688164A - Lateral composite grating DFB laser structure and application - Google Patents
Lateral composite grating DFB laser structure and application Download PDFInfo
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Abstract
A lateral composite grating DFB laser structure and application, the lateral composite grating DFB laser structure includes N electrode layers; the N-type waveguide layer is arranged on the N-side electrode layer; an active layer disposed on the N-type waveguide layer; the P-type waveguide layer is arranged on the active layer and comprises an unetched P-type waveguide layer, ridge waveguides and high-order surface lateral gratings, the ridge waveguides and the high-order surface lateral gratings are arranged on the unetched P-type waveguide layer, the high-order surface lateral gratings are arranged on two sides of the ridge waveguides, and the slot regions are arranged at the connecting positions of the high-order surface lateral gratings and the ridge waveguides; and a P-side electrode layer disposed on the ridge waveguide. According to the invention, the slot is introduced near the connection part of the high-order surface lateral grating and the ridge waveguide for electrical isolation, so that the carrier leakage caused by the lateral grating during electrical injection can be reduced, the threshold current density of the laser is reduced, the slope efficiency is improved, and the narrow linewidth and high-power laser output can be realized.
Description
Technical Field
The invention belongs to the technical field of semiconductor lasers, and particularly relates to a lateral composite grating DFB laser structure and application.
Background
The stable narrow linewidth high power laser source has wide application in the fields of communication, sensing, metrology and the like, while the DFB semiconductor laser becomes an ideal solution due to its compact device, high efficiency and low manufacturing cost.
For a conventional DFB laser, the grating is etched out near the active region, then buried by the upper epitaxial material, and finally the structure continues to grow on the remaining top epitaxial layer. This involves process interruptions, exposing the apparent structure to air and other sources of contamination, and creating defects in the crystal structure near the active region, affecting the performance of the fabricated device, reducing device yield and reliability. Moreover, double epitaxy is a complex, expensive and time consuming process that requires careful cleaning of the sample prior to each process, ultimately increasing the cost of device production.
Researchers have tried to make gratings on both sides of a ridge waveguide of a laser, and a lateral coupling DFB laser is formed by adjusting and controlling evanescent waves of an optical field to realize mode selection. The surface grating can be manufactured simultaneously with the waveguide, the structure avoids the secondary epitaxial step required by an embedded grating structure and allows the device processing to be carried out after the epitaxial growth is finished, thereby simplifying the manufacturing process and reducing the production cost. For surface-side grating structures, the grating region and the current injection region are separated, thereby limiting the interaction between electrically injected carriers and the waveguide interface, which is prone to defects. The characteristics enable the device to be more stable, have better performance and higher reliability, are simpler when being integrated with other functional devices, and have potential advantages in future large-scale integration.
However, the existing side-coupled DFB laser has higher threshold current density and lower slope efficiency than the DFB laser with the conventional buried grating, mainly due to: the surface gratings are directly manufactured on two sides of the ridge waveguide and are still communicated in space, and when electricity is injected from the P-face electrode layer, current carriers diffuse to the surface grating areas on two sides through the ridge waveguide, so that a large number of current carriers are leaked laterally, the threshold current density of laser is improved, and the slope efficiency is reduced. In addition, most of the lateral coupling DFB lasers reported in the prior art are low-order gratings, and have the problems of mode degeneracy, unstable single-mode characteristics and the like. Although the normal standard photolithography method can be used to prepare the high-order surface grating, the large-size lateral grating can aggravate the carrier leakage phenomenon, and it is difficult to realize high-power laser at the same time.
Disclosure of Invention
It is therefore one of the primary objectives of the claimed invention to provide a lateral compound grating DFB laser structure and application thereof, which at least partially solve at least one of the above-mentioned problems.
To achieve the above object, as one aspect of the present invention, there is provided a lateral composite grating DFB laser structure comprising:
an N-face electrode layer;
the N-type waveguide layer is arranged on the N-side electrode layer;
an active layer disposed on the N-type waveguide layer;
the P-type waveguide layer is arranged on the active layer and comprises an unetched P-type waveguide layer, ridge waveguides and high-order surface lateral gratings, the ridge waveguides and the high-order surface lateral gratings are arranged on the unetched P-type waveguide layer, the high-order surface lateral gratings are arranged on two sides of the ridge waveguides, and the slot regions are arranged at the connecting positions of the high-order surface lateral gratings and the ridge waveguides; and
and a P-side electrode layer disposed on the ridge waveguide.
As another aspect of the present invention, there is also provided an application of the lateral composite grating DFB laser structure as described above in the field of semiconductor laser technology.
Based on the above technical solution, the structure and application of the lateral composite grating DFB laser of the present invention have at least one or some of the following advantages over the prior art:
1. according to the lateral composite grating DFB laser structure provided by the invention, the slot is introduced near the connection part of the high-order surface lateral grating and the ridge waveguide for electrical isolation, so that the carrier leakage caused by the lateral grating during electrical injection can be reduced, the threshold current density of the laser is reduced, the slope efficiency is improved, and the narrow line width and high-power laser output can be realized;
2. according to the lateral composite grating DFB laser structure provided by the invention, as a larger threshold gain difference exists between modes corresponding to a main peak and a secondary peak of a reflection spectrum of a high-order grating, a degenerate mode is eliminated, and stable single longitudinal mode lasing is easy to realize; the high-order surface grating has a larger period, and a common standard photoetching technology can be directly adopted, so that the process difficulty is reduced;
3. according to the lateral composite grating DFB laser structure provided by the invention, because the gratings are manufactured on two sides outside the ridge waveguide, a secondary epitaxial step is avoided, the manufacturing cost of a device is saved, and the performance and reliability of the DFB laser are improved; and the structure only comprises an N-surface electrode layer and a P-surface electrode layer, so that a plurality of power supplies are not needed for subarea power-up control, and the structure is simple to manufacture and convenient to use.
Drawings
Fig. 1a is a schematic perspective view of a lateral composite grating DFB laser according to an embodiment of the present invention;
FIG. 1b is a schematic front view of a lateral compound grating DFB laser according to an embodiment of the present invention;
FIG. 1c is a schematic top view of a lateral compound grating DFB laser according to an embodiment of the present invention;
FIG. 2 is a reflection spectrum of a lateral composite grating DFB laser structure in an embodiment of the present invention;
fig. 3 is a graph showing the variation relationship of the carrier density from the center to the right cavity position in the active layers of the three structures of the lateral composite grating DFB laser, the conventional ridge waveguide laser and the conventional high-order surface grating DFB laser in the embodiment of the present invention;
FIG. 4 is a graph of output power versus injection current for a lateral compound grating DFB laser and a conventional ridge waveguide laser in an embodiment of the present invention;
fig. 5 is a spectral diagram of a lateral composite grating DFB laser at an injection current of 100mA in an embodiment of the present invention.
Description of reference numerals:
1-N side electrode layer;
2-N type waveguide layer;
3- -an active layer;
4-P type waveguide layer;
41- -not etching P type waveguide layer;
42- -ridge waveguide;
43- -high order surface lateral grating;
5- -P side electrode layer;
6- -Slot region.
Detailed Description
Hereinafter, the present invention will be described in detail with reference to the accompanying drawings and examples to assist those skilled in the art in fully understanding the objects, features and effects of the present invention. Exemplary embodiments of the present invention are illustrated in the drawings, but it should be understood that the present invention can be embodied in other various forms and should not be limited to the embodiments set forth herein. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention. In addition, the embodiments of the present invention provided below and the technical features in the embodiments may be combined with each other in an arbitrary manner.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Furthermore, the terms "comprises," "comprising," "includes," "including," "has," "having," and the like, when used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components. All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It is noted that the terms used herein should be interpreted as having a meaning that is consistent with the context of this specification and should not be interpreted in an idealized or overly formal sense.
In order to solve the technical problems, the invention provides a lateral composite grating DFB laser structure which can realize single longitudinal mode narrow linewidth high-power laser and has the advantages of simple process, low cost, convenience in use and stable performance. The invention does not need complex, expensive and time-consuming process conditions such as secondary epitaxy, high-resolution photoetching and the like, has low leakage of current carriers caused by the high-order surface lateral grating, and is favorable for realizing low-cost narrow-linewidth high-power laser output.
The invention discloses a lateral composite grating DFB laser structure, which comprises:
an N-face electrode layer;
the N-type waveguide layer is arranged on the N-side electrode layer;
an active layer disposed on the N-type waveguide layer;
the P-type waveguide layer is arranged on the active layer and comprises an unetched P-type waveguide layer, ridge waveguides and high-order surface lateral gratings, the ridge waveguides and the high-order surface lateral gratings are arranged on the unetched P-type waveguide layer, the high-order surface lateral gratings are arranged on two sides of the ridge waveguides, and the slot regions are arranged at the connecting positions of the high-order surface lateral gratings and the ridge waveguides; and
and a P-side electrode layer disposed on the ridge waveguide.
In some embodiments of the present invention, the thickness of the unetched P-type waveguide layer is 0-200 nm.
In some embodiments of the present invention, the ridge waveguide has a width in the range of 2.5-4.0 μm.
In some embodiments of the invention, the high order surface lateral grating satisfies the bragg condition, and the period P is calculated as follows:
where m is the grating order, λBIs the Bragg wavelength, neffIs the mode effective refractive index in the active layer.
In some embodiments of the present invention, the width of the unetched grating region accounts for no less than 50% of the period P.
In some embodiments of the present invention, the width of the slot region is 0.8-2.0 μm.
In some embodiments of the present invention, the slot region is 0-2 μm from the lateral width of the ridge waveguide.
In some embodiments of the invention, the height of the high order surface lateral grating and the ridge waveguide are the same.
In some embodiments of the present invention, the high order surface lateral grating and the ridge waveguide are made of the same material.
The invention also discloses application of the lateral composite grating DFB laser structure in the technical field of semiconductor lasers.
In one exemplary embodiment, the present invention discloses a lateral composite grating DFB laser structure comprising, in bottom-up order: the N-type waveguide layer is arranged on the N surface electrode layer; the P-type waveguide layer comprises two components of an etched P-type waveguide layer and an unetched P-type waveguide layer; the etched P-type waveguide layer comprises two regions of a ridge waveguide and a high-order surface lateral grating; the high-order surface lateral grating is positioned on two sides of the ridge waveguide region and respectively comprises a slot region; the slot region is located near the connection position of the high-order surface lateral grating and the ridge waveguide and used for electric isolation, and carrier leakage caused by the lateral grating during electric injection can be reduced.
The thickness range of the unetched P-type waveguide layer is 0-200 nm, so that the etched P-type waveguide layer is close to the active layer as far as possible, the lateral diffusion of current carriers in the unetched P-type waveguide layer is reduced, and the coupling strength of the high-order surface lateral grating and the optical field is improved.
The width range of the ridge waveguide is 2.5-4.0 mu m so as to realize single transverse mode lasing and meet common standard photoetching manufacturing conditions, and the length and the width of the laser are self-defined and adjusted according to an actual epitaxial structure and required laser performance.
The high-order surface lateral grating meets the Bragg condition to realize single longitudinal mode narrow linewidth laser, and the period P is calculated according to the following steps:
where m is the grating order, λBIs the Bragg wavelength, neffIs the mode effective refractive index in the active layer.
The period P of the high-order surface lateral grating can be combined with a practically used epitaxial structure and a designed Bragg wavelength lambdaBAnd carrying out self-defined adjustment to reach the size range meeting the requirements of the common standard photoetching process. The duty ratio of the high-order surface lateral grating, namely the proportion of the width of an unetched grating region in the period P is not less than 50%, so that the light limiting factor in the grating region is improved.
The waveguide structures of the ridge waveguide, the high-order surface lateral grating region and the slot region are made of the same epitaxial material and are positioned at the same etching depth, so that the process steps are simplified and the manufacture is convenient.
The slot area is located on the high-order surface lateral grating, the width range is 0.8-2.0 mu m, and the requirements of common standard photoetching and dry etching processes are met.
The lateral width range of the slot region from the ridge waveguide is 0-2 microns, and leakage of carriers caused by the fact that the carriers pass through a high-order surface lateral grating region during electric injection is restrained on the premise that grating mode selection is not affected.
The technical solution of the present invention is further illustrated by the following specific embodiments in conjunction with the accompanying drawings. It should be noted that the following specific examples are given by way of illustration only and the scope of the present invention is not limited thereto.
Fig. 1a is a schematic perspective view of a lateral composite grating DFB laser according to an embodiment of the present invention, which includes, in order from bottom to top (positive direction of x-axis in fig. 1 a): the N-type waveguide layer comprises an N-surface electrode layer 1, an N-type waveguide layer 2, an active layer 3, a P-type waveguide layer 4 and a P-surface electrode layer 5; the P-type waveguide layer 4 comprises regions such as an unetched P-type waveguide layer 41, a ridge waveguide 42, a high-order surface lateral grating 43 and the like; the high-order surface lateral gratings 43 are located on both sides of the ridge waveguide 42 and each comprise a slot region 6, and the slot regions 6 are located near the junction of the ridge waveguide 42 and the high-order surface lateral gratings 43.
Fig. 1b is a schematic front view of the DFB laser with the lateral composite grating in the embodiment of the present invention, where the total thickness of the P-type waveguide layer 4 is H, and the thickness H2 of the un-etched P-type waveguide layer 41 ranges from 0nm to 200nm, so that the etched depth H1 of the ridge waveguide 42 and the high-order surface lateral grating 43 may be close to the active layer, thereby reducing the lateral (y direction in fig. 1 a) diffusion of carriers in the un-etched P-type waveguide layer 41 and improving the coupling strength between the high-order surface lateral grating 43 and the optical field.
Fig. 1c is a schematic top view structure diagram of the lateral composite grating DFB laser in the embodiment of the present invention, and the width W2 of the ridge waveguide 42 is 2.5 to 4.0 μm, which meets the requirement of the common standard lithography, and can realize single transverse mode lasing. The width W2 of the P-face electrode layer 5 is smaller than the width W2 of the ridge waveguide 42, and the length L and the width W1 of the laser are custom-adjusted according to the actual epitaxial structure and the required laser performance.
The period P of the high-order surface lateral grating 43 satisfies the bragg condition, and can realize single longitudinal mode narrow linewidth laser, which is calculated as follows:
where m is the grating order, λBIs the Bragg wavelength, n, corresponding to said gratingeffIs the mode effective refractive index in the active layer.
As shown in FIG. 1c, the period P and lateral width W4 of the high-order surface lateral grating 43 can be combined to make the grating practicalEpitaxial structure for use and designed Bragg wavelength lambdaBAnd carrying out self-defined adjustment to reach the size meeting the common standard photoetching process condition. The duty cycle of the high-order surface lateral grating 43, i.e. the ratio of the width of the unetched grating region to the period P, is not less than 50%, increasing the light confinement factor in the grating region.
As shown in fig. 1b and fig. 1c, the ridge waveguide 42, the high-order surface side grating 43 and the waveguide structure of the slot region 6 are made of the same epitaxial material and located at the same etching depth H1, which simplifies the process steps. The slot region 6 is located on the high-order surface lateral grating 43, the width W5 of the slot region 6 ranges from 0.8 μm to 2.0 μm, and the requirements of common standard photoetching and dry etching processes can be met. The range of the lateral width W6 of the slot region 6 from the ridge waveguide 42 is 0.5-1.2 mu m, and on the premise of not influencing grating mode selection, leakage caused by carriers passing through the high-order surface lateral grating 43 during electric injection is inhibited.
One embodiment of the invention described below uses a conventional AlGaInAs/InP epitaxial structure with a P-type waveguide layer 4 thickness H of 1.85 μm, an etched P-type waveguide layer thickness H1 of 1.7 μm, an unetched P-type waveguide layer 41 thickness H2 of 150nm, a ridge waveguide 42 and a high-order surface lateral grating 43 only 150nm from the active layer, reduces lateral diffusion of carriers in the unetched P-type waveguide layer 41, improves the coupling strength of the high-order surface lateral grating 43 to the optical field, and increases in the refractive index difference of the high-order surface lateral grating 43 in the z-direction in fig. 1a can increase the optical confinement factor in this region.
The width W2 of the ridge waveguide 42 is 3 μm, only the fundamental transverse mode is completely confined in the active layer 3, the threshold gain is lower than other high-order transverse modes, and single transverse mode lasing can be achieved finally through mode competition.
The width W5 of the slot region 6 is 1 μm, and the bragg wavelength λ corresponding to the high-order surface-side grating 43B1550nm, the grating order m 17, and the duty cycle 0.5. In the embodiment, the high-order surface lateral grating 43 is adopted to screen the single longitudinal mode, and as the larger threshold gain difference exists between the modes corresponding to the main peak and the secondary peak of the reflection spectrum of the high-order grating, the degenerate mode is eliminated, and the stable realization is easyAnd (3) performing fixed single longitudinal mode lasing. The dimensions of the high-order surface grating DFB laser related to the embodiment all reach the conditions of the processes such as common standard photoetching and conventional dry etching, the secondary epitaxy step and the high-resolution photoetching technology are not related, the process difficulty is reduced, the process steps are simplified, and the production cost is reduced.
Fig. 2 is a reflection spectrum calculated by simulation of a lateral composite grating DFB laser structure in an embodiment of the present invention, in which a reflection peak appears at a wavelength of 1550nm, illustrating that the introduction of the slot region 6 does not affect the realization of a single longitudinal mode by the high-order surface lateral grating 43. Fig. 3 is a graph of the relationship between the change of the carrier density in the active layer of the lateral compound grating DFB laser and the cavity position from the center to the right in the three structures of the conventional ridge waveguide laser and the conventional high-order surface grating DFB laser in the embodiment of the present invention calculated by simulation. The difference between these three structures is that the conventional ridge waveguide laser does not have the high order surface lateral grating 43 and the slot region 6, whereas the conventional high order surface grating DFB laser does not have the slot region 6, and the other structural parameters are kept consistent. Fig. 3 shows only the width of the right half of the ridge waveguide 42, corresponding to an abscissa ranging from 0 to 1.5 μm. When the same current of 100mA was applied to these three structural simulations, it was found that the conventional high order surface grating DFB laser suffered from severe lateral leakage of carriers due to the presence of the high order surface lateral grating 43, as compared to the conventional ridge waveguide laser. In the lateral composite grating DFB laser according to the embodiment of the present invention, the slot region 6 is introduced into the high-order surface lateral grating 43, so that most of the high-order surface lateral grating 43 is electrically isolated from the ridge waveguide 42, and the lateral leakage of carriers is greatly reduced. Fig. 4 is a graph showing the variation of the output power with the injection current of the lateral composite grating DFB laser and the conventional ridge waveguide laser in the embodiment of the present invention, in which the threshold current is decreased from 240mA to 70mA and the output power is increased from 5.19mW to 34.55mW when the injection current is 500mA, as compared with the conventional high-order surface grating DFB laser. FIG. 5 is a diagram of the spectrum of a lateral compound grating DFB laser with an injection current of 100mA, a lasing wavelength of 1546.6nm, and a side mode suppression ratio of 33.41dB, according to an embodiment of the present invention. Therefore, compared with the conventional high-order surface grating DFB laser, the lateral composite grating DFB laser in the embodiment of the invention reduces the threshold current of the laser, improves the slope efficiency and the output power, and is beneficial to realizing the narrow-linewidth high-power laser output.
The laser can be electrically pumped only by respectively connecting the N-surface electrode layer 1 and the P-surface electrode layer 5 of the lateral composite grating DFB laser in the embodiment with the negative electrode and the positive electrode of a power supply, and the laser does not need to be subjected to subarea power-up control by using a plurality of power supplies, so that the laser is easy to manufacture and convenient to use.
It should be noted that, although the invention has been shown and described with reference to the specific exemplary embodiments thereof, it should be understood by those skilled in the art that the present invention is not limited to the above-mentioned embodiments, and various changes and modifications may be made therein without departing from the spirit and scope of the invention, and it is intended that the invention encompass such changes and modifications as fall within the scope of the claims and the equivalent technical scope of the invention.
In particular, various combinations and/or combinations of features recited in the various embodiments and/or claims of the present invention can be made without departing from the spirit and teachings of the invention, even if such combinations or combinations are not explicitly recited in the present invention. All such combinations and/or associations are within the scope of the present invention. The scope of the invention should, therefore, be determined not with reference to the appended claims, but should instead be determined with reference to the following claims.
Claims (10)
1. A lateral compound grating DFB laser structure, comprising:
an N-face electrode layer;
the N-type waveguide layer is arranged on the N-side electrode layer;
an active layer disposed on the N-type waveguide layer;
the P-type waveguide layer is arranged on the active layer and comprises an unetched P-type waveguide layer, ridge waveguides and high-order surface lateral gratings, the ridge waveguides and the high-order surface lateral gratings are arranged on the unetched P-type waveguide layer, the high-order surface lateral gratings are arranged on two sides of the ridge waveguides, and the slot regions are arranged at the connecting positions of the high-order surface lateral gratings and the ridge waveguides; and
and a P-side electrode layer disposed on the ridge waveguide.
2. The lateral compound grating DFB laser structure of claim 1,
the thickness of the unetched P-type waveguide layer is 0-200 nm.
3. The lateral compound grating DFB laser structure of claim 1,
the width range of the ridge waveguide is 2.5-4.0 mu m.
4. The lateral compound grating DFB laser structure of claim 1,
the high-order surface lateral grating meets the Bragg condition, and the period P is calculated according to the following steps:
where m is the grating order, λBIs the Bragg wavelength, neffIs the mode effective refractive index in the active layer.
5. The lateral compound grating DFB laser structure of claim 4,
the proportion of the width of the unetched grating area in the period P is not less than 50%.
6. The lateral compound grating DFB laser structure of claim 1,
the width of the slot area is 0.8-2.0 μm.
7. The lateral compound grating DFB laser structure of claim 1,
the lateral width of the slot region from the ridge waveguide is 0-2 mu m.
8. The lateral compound grating DFB laser structure of claim 1,
the high-order surface lateral grating and the ridge waveguide have the same height.
9. The lateral compound grating DFB laser structure of claim 1,
the high-order surface lateral grating and the ridge waveguide are made of the same material.
10. Use of a lateral compound grating DFB laser structure according to any of claims 1 to 9 in the field of semiconductor laser technology.
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| CN114039274A (en) * | 2021-10-18 | 2022-02-11 | 长春理工大学 | Lateral coupling distributed feedback laser with narrow groove structure and preparation method thereof |
| CN115799991A (en) * | 2023-01-06 | 2023-03-14 | 深圳市星汉激光科技股份有限公司 | Laser chip of discrete side wall grating and preparation method |
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