CN112688164B - Lateral composite grating DFB laser structure and application - Google Patents
Lateral composite grating DFB laser structure and application Download PDFInfo
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Abstract
A lateral composite grating DFB laser structure and application, the lateral composite grating DFB laser structure includes N-sided electrode layer; an N-type waveguide layer arranged on the N-face electrode layer; an active layer disposed on the N-type waveguide layer; the P-type waveguide layer is arranged on the active layer and comprises an unetched P-type waveguide layer, a ridge waveguide and a high-order surface lateral grating, wherein the ridge waveguide and the high-order surface lateral grating are both arranged on the unetched P-type waveguide layer, the high-order surface lateral grating is arranged on two sides of the ridge waveguide, and a slot area is arranged at the joint of the high-order surface lateral grating and the ridge waveguide; and a P-plane electrode layer disposed on the ridge waveguide. According to the invention, the slot is introduced near the joint of the lateral grating and the ridge waveguide on the high-order surface for electric isolation, so that carrier leakage caused by the lateral grating during electric injection can be reduced, the threshold current density of the laser is reduced, the slope efficiency is improved, and the narrow linewidth and high-power laser output can be realized.
Description
Technical Field
The invention belongs to the technical field of semiconductor lasers, and particularly relates to a lateral composite grating DFB laser structure and application.
Background
Stable narrow linewidth high power laser sources have wide application in communication, sensing, metrology and other fields, while DFB semiconductor lasers are ideal solutions due to their compact devices, high efficiency and low manufacturing cost.
For conventional DFB lasers, the grating is etched near the active region, then buried by the upper epitaxial material, and finally the structure continues to grow on the remaining top epitaxial layer. This involves process interruption, exposing the apparent structure to air and other sources of contamination, and creating defects in the crystal structure near the active region, affecting the performance of the fabricated device, reducing the yield and reliability of the device. And secondary epitaxy is a complex, expensive and time consuming process that requires careful cleaning of the sample prior to each process, ultimately increasing the cost of the device.
Researchers have tried to fabricate gratings on both sides of a laser ridge waveguide, and mode selection is achieved by modulating the evanescent wave of the optical field, resulting in a laterally coupled DFB laser. The surface grating can be completed simultaneously with the manufacture of the waveguide, the structure avoids the secondary epitaxy step required by the embedded grating structure, and the device treatment is allowed to be carried out after the epitaxy is finished, so that the manufacturing process is simplified, and the production cost is reduced. For surface-side grating structures, the grating region and the current injection region are separated, thus limiting interactions between the electrically injected carriers and the defect-prone waveguide interface. These features make the device more stable, better in performance, more reliable, simpler in integration with other functional devices, and potentially advantageous in future scale-up integration.
However, existing laterally coupled DFB lasers have higher threshold current densities and lower slope efficiencies than DFB lasers with conventional buried gratings, mainly because: the surface gratings are directly manufactured on two sides of the ridge waveguide, the space is still communicated, and when electric injection is carried out from the P-surface electrode layer, carriers diffuse to the surface grating areas on the two sides through the ridge waveguide, so that a large number of carriers leak laterally, the threshold current density of laser is improved, and the slope efficiency is reduced. In addition, most of the currently reported lateral coupled DFB lasers are low-order gratings, and have the problems of mode degeneracy, unstable single-mode characteristics and the like. Although high-order surface gratings can be fabricated by using a common standard photolithography method, such large-sized lateral gratings exacerbate the carrier leakage phenomenon, and it is difficult to simultaneously implement high-power lasers.
Disclosure of Invention
Accordingly, it is an objective of the present invention to provide a lateral composite grating DFB laser structure and application thereof, so as to at least partially solve at least one of the above-mentioned problems.
To achieve the above object, as one aspect of the present invention, there is provided a lateral composite grating DFB laser structure including:
an N-side electrode layer;
an N-type waveguide layer arranged on the N-face electrode layer;
an active layer disposed on the N-type waveguide layer;
the P-type waveguide layer is arranged on the active layer and comprises an unetched P-type waveguide layer, a ridge waveguide and a high-order surface lateral grating, wherein the ridge waveguide and the high-order surface lateral grating are both arranged on the unetched P-type waveguide layer, the high-order surface lateral grating is arranged on two sides of the ridge waveguide, and a slot area is arranged at the joint of the high-order surface lateral grating and the ridge waveguide; and
and the P-face electrode layer is arranged on the ridge waveguide.
As another aspect of the present invention, there is also provided an application of the lateral composite grating DFB laser structure as described above in the field of semiconductor laser technology.
Based on the above technical solutions, the lateral composite grating DFB laser structure and the application of the present invention have at least one or a part of the following advantages over the prior art:
1. according to the lateral composite grating DFB laser structure provided by the invention, the slot is introduced near the joint of the lateral grating and the ridge waveguide on the high-order surface for electric isolation, so that carrier leakage caused by the lateral grating during electric injection can be reduced, the threshold current density of the laser is reduced, the slope efficiency is improved, and the realization of narrow linewidth and high-power laser output is facilitated;
2. according to the lateral composite grating DFB laser structure provided by the invention, as the larger threshold gain difference exists between the modes corresponding to the main peak and the sub-peak of the reflection spectrum of the high-order grating, the degenerate mode is eliminated, and stable single longitudinal mode lasing is easy to realize; the period of the high-order surface grating is larger, and the common standard photoetching technology can be directly adopted, so that the process difficulty is reduced;
3. according to the lateral composite grating DFB laser structure, as the gratings are manufactured on the two sides outside the ridge waveguide, the secondary epitaxial step is avoided, the manufacturing cost of devices is saved, and the performance and reliability of the DFB laser are improved; the structure only comprises an N-face electrode layer and a P-face electrode layer, does not need to use a plurality of power supplies to conduct partition power-on control, and is simple to manufacture and convenient to use.
Drawings
FIG. 1a is a schematic diagram of a lateral composite grating DFB laser in an embodiment of the invention;
FIG. 1b is a schematic diagram of a front view of a lateral composite grating DFB laser according to an embodiment of the present invention;
FIG. 1c is a schematic top view of a lateral composite grating DFB laser according to an embodiment of the invention;
FIG. 2 is a reflection spectrum of a lateral composite grating DFB laser structure in an embodiment of the invention;
FIG. 3 is a graph showing the relationship between carrier density and cavity position from center to right in three active layers of a lateral composite grating DFB laser, a conventional ridge waveguide laser, and a conventional high-order surface grating DFB laser according to an embodiment of the present invention;
FIG. 4 is a graph of output power versus injection current for a lateral composite grating DFB laser and a conventional ridge waveguide laser in an embodiment of the invention;
FIG. 5 is a graph of the spectrum of a lateral composite grating DFB laser at an injection current of 100mA in an embodiment of the invention.
Reference numerals illustrate:
1- -N electrode layer;
a 2-N type waveguide layer;
3- -an active layer;
4-P-type waveguide layer;
41- -unetched P-type waveguide layer;
42- -ridge waveguide;
43- -high order surface side gratings;
a 5-P surface electrode layer;
6- -slot area.
Detailed Description
The present invention will be described in detail below with reference to the drawings and examples to assist those skilled in the art in fully understanding the objects, features, and effects of the present invention. Exemplary embodiments of the present invention are illustrated in the accompanying drawings, but it is to be understood that the present application can be embodied in various other forms and should not be limited to the embodiments set forth herein. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the present invention. In addition, the respective embodiments of the present invention and technical features in the embodiments may be combined with each other in any manner.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Furthermore, the terms "comprises," "comprising," "includes," "including," "having," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but does not preclude the presence or addition of one or more other features, steps, operations or components. All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It should be noted that the terms used herein should be construed to have meanings consistent with the context of the present specification and should not be construed in an idealized or overly formal manner.
In order to solve the technical problems, the invention provides a lateral composite grating DFB laser structure which can realize single longitudinal mode narrow linewidth high power laser and has the advantages of simple process, lower cost, convenient use and stable performance. The invention does not need complex, expensive and time-consuming process conditions such as secondary epitaxy, high-resolution photoetching and the like, has low leakage caused by carriers passing through the high-order surface side grating, and is favorable for realizing low-cost narrow-linewidth high-power laser output.
The invention discloses a lateral composite grating DFB laser structure, comprising:
an N-side electrode layer;
an N-type waveguide layer arranged on the N-face electrode layer;
an active layer disposed on the N-type waveguide layer;
the P-type waveguide layer is arranged on the active layer and comprises an unetched P-type waveguide layer, a ridge waveguide and a high-order surface lateral grating, wherein the ridge waveguide and the high-order surface lateral grating are both arranged on the unetched P-type waveguide layer, the high-order surface lateral grating is arranged on two sides of the ridge waveguide, and a slot area is arranged at the joint of the high-order surface lateral grating and the ridge waveguide; and
and the P-face electrode layer is arranged on the ridge waveguide.
In some embodiments of the invention, the thickness of the unetched P-type waveguide layer is 0-200 nm.
In some embodiments of the invention, the ridge waveguide has a width in the range of 2.5 to 4.0 μm.
In some embodiments of the invention, the higher order surface side-to-side grating satisfies the Bragg condition, and period P is calculated as follows:
where m is the grating order, λ B Is Bragg wavelength, n eff Is the mode effective refractive index in the active layer.
In some embodiments of the present invention, the unetched grating region has a width that is not less than 50% of the period P.
In some embodiments of the invention, the slot region has a width of 0.8 to 2.0 μm.
In some embodiments of the invention, the slot region has a lateral width from 0 to 2 μm from the ridge waveguide.
In some embodiments of the invention, the high order surface side gratings and ridge waveguides are the same height.
In some embodiments of the invention, the high order surface side gratings and ridge waveguides are of the same material.
The invention also discloses application of the lateral composite grating DFB laser structure in the technical field of semiconductor lasers.
In one exemplary embodiment, the invention discloses a lateral composite grating DFB laser structure comprising, in bottom-up order: an N-side electrode layer, an N-type waveguide layer, an active layer, a P-type waveguide layer and a P-side electrode layer; the P-type waveguide layer comprises two components, namely an etched P-type waveguide layer and an unetched P-type waveguide layer; the etched P-type waveguide layer comprises two areas, namely a ridge waveguide and a high-order surface lateral grating; the high-order surface lateral gratings are positioned at two sides of the ridge waveguide region and respectively comprise a slot region; the slot region is positioned near the junction of the lateral grating of the high-order surface and the ridge waveguide and is used for electric isolation, so that carrier leakage caused by the lateral grating during electric injection can be reduced.
The thickness of the unetched P-type waveguide layer is in the range of 0-200 nm, so that the etched P-type waveguide layer is as close to the active layer as possible, lateral diffusion of carriers in the unetched P-type waveguide layer is reduced, and the coupling strength of the high-order surface lateral grating and the optical field is improved.
The width range of the ridge waveguide is 2.5-4.0 mu m so as to realize single transverse mode lasing and meet the common standard photoetching manufacturing conditions, and the length and the width of the laser are subjected to self-defined adjustment according to the actual epitaxial structure and the required laser performance.
The high-order surface side grating meets the Bragg condition to realize single longitudinal mode narrow linewidth laser, and the period P is calculated according to the following steps:
where m is the grating order, λ B Is Bragg wavelength, n eff Is the mode effective refractive index in the active layer.
The period P of the high-order surface side grating can be combined with the practical epitaxial structure and the designed Bragg wavelength lambda B And carrying out self-defined adjustment to reach the size range meeting the requirements of the common standard photoetching technology. The high-order surface side gratingI.e. the ratio of the width of the unetched grating region to the period P is not less than 50% to increase the light confinement factor in the grating region.
The ridge waveguide, the high-order surface side grating region and the waveguide structure of the slot region adopt the same epitaxial material and are positioned at the same etching depth, so that the process steps are simplified and the manufacture is convenient.
The slot region is positioned on the lateral grating of the high-order surface, and the width range is 0.8-2.0 mu m, so that the requirements of common standard photoetching and dry etching processes are met.
The lateral width range of the slot area from the ridge waveguide is 0-2 mu m, and on the premise of not influencing the mode selection of the grating, the leakage of carriers caused by the lateral grating area of the high-order surface during electric injection is restrained.
The technical scheme of the invention is further described below by means of specific embodiments and with reference to the accompanying drawings. It should be noted that the following specific examples are given by way of illustration only and the scope of the present invention is not limited thereto.
Fig. 1a is a schematic diagram of a schematic perspective structure of a lateral composite grating DFB laser according to an embodiment of the present invention, including, in order from bottom to top (positive direction of x-axis in fig. 1 a): an N-plane electrode layer 1, an N-type waveguide layer 2, an active layer 3, a P-type waveguide layer 4 and a P-plane electrode layer 5; the P-type waveguide layer 4 comprises an unetched P-type waveguide layer 41, a ridge waveguide 42, a high-order surface side grating 43 and other areas; the high order surface side gratings 43 are located on both sides of the ridge waveguide 42 and each comprise a slot region 6, the slot regions 6 being located near the junction of the ridge waveguide 42 and the high order surface side gratings 43.
Fig. 1b is a schematic diagram of a front view structure of a lateral composite grating DFB laser according to an embodiment of the present invention, where the total thickness of the P-type waveguide layer 4 is H, and the thickness H2 of the unetched P-type waveguide layer 41 ranges from 0nm to 200nm, so that the etching depth H1 of the ridge waveguide 42 and the high-order surface lateral grating 43 may be close to the active layer, which reduces the lateral diffusion of carriers in the unetched P-type waveguide layer 41 (y direction in fig. 1 a), and improves the coupling strength between the high-order surface lateral grating 43 and the optical field.
Fig. 1c is a schematic top view structure of a lateral composite grating DFB laser according to an embodiment of the present invention, where the width W2 of the ridge waveguide 42 ranges from 2.5 μm to 4.0 μm, which meets the requirements of the common standard lithography manufacturing, and can implement single transverse mode lasing. The width W2 of the P-plane electrode layer 5 is smaller than the width W2 of the ridge waveguide 42, and the length L and the width W1 of the laser are adjusted in a self-defined manner according to the actual epitaxial structure and the required laser performance.
The period P of the high-order surface side grating 43 satisfies the bragg condition, and can realize single longitudinal mode narrow linewidth laser, which is calculated according to the following steps:
where m is the grating order, λ B Is the Bragg wavelength corresponding to the grating, n eff Is the mode effective refractive index in the active layer.
As shown in fig. 1c, the period P and lateral width W4 of the higher order surface side grating 43 may be combined with the actual epitaxial structure and the designed bragg wavelength λ B And carrying out self-defined adjustment to reach the size meeting the common standard photoetching process conditions. The duty cycle of the high-order surface side grating 43, i.e. the ratio of the width of the unetched grating region to the period P is not less than 50%, is increased to increase the light confinement factor in the grating region.
As shown in fig. 1b and 1c, the ridge waveguide 42, the high-order surface side grating 43 and the waveguide structure of the slot region 6 are made of the same epitaxial material and located at the same etching depth H1, which simplifies the process steps. The slot region 6 is located on the high-order surface side grating 43, and the width W5 of the slot region 6 ranges from 0.8 μm to 2.0 μm, so that the requirements of common standard photoetching and dry etching processes can be met. The lateral width W6 of the slot region 6 from the ridge waveguide 42 ranges from 0.5 to 1.2 μm, and leakage of carriers caused by the high-order surface side grating 43 during electric injection is suppressed without affecting the grating mode selection.
One embodiment of the invention described below employs a conventional AlGaInAs/InP epitaxial structure, with the thickness h=1.85 μm of the P-type waveguide layer 4, where the thickness h1=1.7 μm of the etched P-type waveguide layer, the thickness h2=150 nm of the unetched P-type waveguide layer 41, the ridge waveguide 42 and the high-order surface side grating 43 are only 150nm from the active layer, the lateral diffusion of carriers in the unetched P-type waveguide layer 41 is reduced, the coupling strength of the high-order surface side grating 43 and the optical field is improved, and the increase in the refractive index difference of the high-order surface side grating 43 in the z direction in fig. 1a can improve the optical confinement factor in this region.
The ridge waveguide 42 has a width w2=3 μm, and only the fundamental transverse mode is completely confined in the active layer 3, the threshold gain is lower than other higher-order transverse modes, and finally single transverse mode lasing can be achieved by mode competition.
The width w5=1 μm of the slot region 6, the bragg wavelength λ corresponding to the higher-order surface side grating 43 B =1550 nm, grating order m=17, duty cycle 0.5. In this embodiment, the high-order surface side grating 43 is used to screen the single longitudinal mode, and because there is a large difference in threshold gain between the modes corresponding to the main peak and the sub-peak of the reflection spectrum of the high-order grating, the degenerate mode is eliminated, and stable single longitudinal mode lasing is easy to realize. The dimensions of the high-order surface grating DFB laser related to the embodiment all reach the conditions of common standard photoetching, conventional dry etching and other processes, secondary epitaxy steps and high-resolution photoetching technology are not related, the process difficulty is reduced, the process steps are simplified, and the production cost is reduced.
Fig. 2 is a reflection spectrum of a side-by-side composite grating DFB laser structure in an embodiment of the invention calculated by simulation, wherein the reflection peak occurs at a wavelength of 1550nm, illustrating that the introduction of the slot region 6 does not affect the higher order surface side-by-side grating 43 to achieve a single longitudinal mode. Fig. 3 is a graph showing the relationship between the carrier density in the active layers of the lateral composite grating DFB laser and the three structures of the conventional ridge waveguide laser and the conventional high-order surface grating DFB laser, which are calculated through simulation, from the center to the cavity position on the right side. The three structures differ in that conventional ridge waveguide lasers do not have a high-order surface side grating 43 and a slot region 6, whereas conventional high-order surface grating DFB lasers do not have a slot region 6, and other structural parameters remain consistent. Fig. 3 shows only the width of the right half of the ridge waveguide 42, corresponding to an abscissa range of 0 to 1.5 μm. When the same current of 100mA was applied to these three structural simulations, it was found that a conventional high-order surface grating DFB laser developed severe carrier lateral leakage due to the presence of the high-order surface lateral grating 43, compared to a conventional ridge waveguide laser. In the lateral composite grating DFB laser according to the embodiment of the present invention, the slot region 6 is introduced into the high-order surface lateral grating 43, so that most of the region of the high-order surface lateral grating 43 is in an electrically isolated state with the ridge waveguide 42, and the lateral leakage degree of carriers is greatly reduced. Fig. 4 is a graph showing the variation of the output power of the lateral composite grating DFB laser and the conventional ridge waveguide laser according to the embodiment of the present invention along with the injection current, and compared with the conventional high-order surface grating DFB laser, the threshold current of the lateral composite grating DFB laser according to the embodiment of the present invention is reduced from 240mA to 70mA, and when the injection current is 500mA, the output power is increased from 5.19mW to 34.55mW. FIG. 5 is a spectrum diagram of a lateral composite grating DFB laser with an injection current of 100mA, a lasing wavelength of 1546.6nm and a side mode rejection ratio of 33.41dB in an embodiment of the invention. Therefore, compared with a conventional high-order surface grating DFB laser, the lateral composite grating DFB laser in the embodiment of the invention reduces the threshold current of the laser, improves the slope efficiency and the output power, and is beneficial to realizing the high-power laser output with narrow linewidth.
The laser can be electrically pumped only by respectively connecting the N-face electrode layer 1 and the P-face electrode layer 5 of the lateral composite grating DFB laser with the negative electrode and the positive electrode of the power supply, a plurality of power supplies are not needed for carrying out regional power-up control, and the lateral composite grating DFB laser is easy to manufacture and convenient to use.
It should be noted that, although the present invention has been shown and described with reference to certain exemplary embodiments thereof, it should be understood by those skilled in the art that the present invention is not limited to the above-described embodiments, but is intended to include all modifications and variations without departing from the spirit and scope of the present invention, provided that such modifications and variations fall within the scope of the appended claims and the equivalents thereof.
In particular, the features recited in the various embodiments of the invention and/or in the claims can be combined in various combinations and/or combinations without departing from the spirit and teachings of the invention, even if such combinations or combinations are not explicitly recited in the invention. All such combinations and/or combinations are within the scope of the present invention. The scope of the invention should, therefore, be determined not with reference to the appended claims, but instead should be determined with reference to the equivalents of the claims.
Claims (6)
1. A lateral composite grating DFB laser structure, comprising:
an N-side electrode layer;
an N-type waveguide layer arranged on the N-face electrode layer;
an active layer disposed on the N-type waveguide layer;
the P-type waveguide layer is arranged on the active layer and comprises an unetched P-type waveguide layer, a ridge waveguide and high-order surface side gratings, the ridge waveguide and the high-order surface side gratings are arranged on the unetched P-type waveguide layer, the high-order surface side gratings are arranged on two sides of the ridge waveguide, a slot area is arranged at the joint of the high-order surface side gratings and the ridge waveguide to electrically isolate the high-order surface side gratings from the ridge waveguide, the width of the slot area is 0.8-2.0 mu m, the thickness of the unetched P-type waveguide layer is 0-200 nm, the high-order surface side gratings meet Bragg conditions, and the period P is calculated according to the following steps:
where m is the grating order, λ B Is Bragg wavelength, n eff Is the mode effective refractive index in the active layer, the width of the unetched grating area is not less than 50% of the period P; and
and the P-face electrode layer is arranged on the ridge waveguide.
2. A lateral composite grating DFB laser structure as recited in claim 1,
the ridge waveguide has a width in the range of 2.5 to 4.0 μm.
3. A lateral composite grating DFB laser structure as recited in claim 1,
the slot region has a lateral width from 0 to 2 μm from the ridge waveguide.
4. A lateral composite grating DFB laser structure as recited in claim 1,
the high-order surface side grating and the ridge waveguide have the same height.
5. A lateral composite grating DFB laser structure as recited in claim 1,
the high-order surface side grating and the ridge waveguide are made of the same material.
6. Use of a lateral composite grating DFB laser structure according to any of claims 1 to 5 in the field of semiconductor laser technology.
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