CN115133397A - Ridge waveguide semiconductor laser and preparation method thereof - Google Patents
Ridge waveguide semiconductor laser and preparation method thereof Download PDFInfo
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- CN115133397A CN115133397A CN202211060039.3A CN202211060039A CN115133397A CN 115133397 A CN115133397 A CN 115133397A CN 202211060039 A CN202211060039 A CN 202211060039A CN 115133397 A CN115133397 A CN 115133397A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1025—Extended cavities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H—ELECTRICITY
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- H01S2304/00—Special growth methods for semiconductor lasers
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Abstract
The invention relates to a preparation method of a ridge waveguide semiconductor laser, which comprises the following steps: s1, growing a buffer layer on the substrate, and growing a quantum well on the buffer layer; s2, respectively growing a first InP layer in butt joint with one opposite side of the quantum well, wherein the growing height of the first InP layer is consistent with that of the quantum well; s3, continuing to sequentially grow a covering layer and a contact layer on the quantum well and the first InP layers, manufacturing a ridge waveguide in the region where the quantum well is located, and wrapping the ridge waveguide by the two first InP layers; and S4, finishing the subsequent growth manufacturing process to obtain the laser. A ridge waveguide semiconductor laser is also provided. InP is grown on two sides of a laser quantum well in a butt joint mode, and the problem of high junction temperature of a device during working is solved by utilizing the high thermal conductivity of the InP for heat dissipation; meanwhile, the InP grown in a butt joint mode on two sides increases the cavity length of the laser, and the ridge waveguide is wrapped, so that the laser is easy to cleave in production and preparation, the damage of a cleaved cavity surface cannot occur, the yield of the laser can be obviously improved, and the production cost is reduced.
Description
Technical Field
The invention relates to the technical field of optical communication lasers, in particular to a preparation method of a ridge waveguide semiconductor laser.
Background
The semiconductor laser has the advantages of small volume, light weight, low cost and easy scale production, and has wide development prospect in the fields of optical storage, optical communication, national defense and the like.
The modulation rate of the laser is related to the laser photon lifetime, which is related to the laser effective volume. In order to improve the modulation rate of the laser and reduce the photon life, a short cavity length structure is usually adopted, but the cavity length of the laser is as short as within 200um, so that the cavity surface damage and aging failure of the laser are easy to occur during the cleavage; meanwhile, the short cavity length also causes the thermal resistance of the laser to be very large, the junction temperature of the device is very high when the device works, and the performance and the reliability of the device are seriously influenced.
Disclosure of Invention
The invention aims to provide a preparation method of a ridge waveguide semiconductor laser, which can at least solve part of defects in the prior art.
In order to achieve the above purpose, the embodiments of the present invention provide the following technical solutions: a preparation method of a ridge waveguide semiconductor laser comprises the following steps:
s1, growing a buffer layer on the substrate, and growing a quantum well on the buffer layer;
s2, respectively growing a first InP layer in butt joint with one opposite side of the quantum well, wherein the growing height of the first InP layer is consistent with that of the quantum well;
s3, continuing to sequentially grow a covering layer and a contact layer on the quantum well and the first InP layer, manufacturing a ridge waveguide in the region where the quantum well is located, and wrapping the ridge waveguide by the two first InP layers;
and S4, finishing the subsequent growth manufacturing process to obtain the laser.
Further, the quantum well comprises an active layer, a second InP layer and a grating layer which are sequentially grown on the buffer layer.
Furthermore, the quantum well further comprises a grating buried layer, and after the grating is manufactured on the grating layer, the grating buried layer is epitaxially grown on the grating layer.
Further, before the first InP layer is grown in a butt joint mode, a mask layer grows on the quantum well, then one opposite side of the mask layer is removed through photoetching and etching, the part, not covered with the mask layer, of the quantum well is etched downwards through a dry method and a wet method until two gaps are formed in the buffer layer, then the first InP layer grows in a butt joint mode at the two gaps, and the two first InP layers fill the two gaps.
Further, along the direction between the two notches, the sizes of the two notches are smaller than the size of the mask layer after photoetching and etching, and the sum of the size of the mask layer after photoetching and etching and the size of the two notches is the cavity length of the laser.
Further, the size of each of the two notches is controlled to be between 1 and 500 μm in the direction between the two notches.
Further, the size of the mask layer after photoetching and etching is controlled to be 10-200 μm along the direction between the two notches.
Further, the subsequent growth manufacturing process comprises manufacturing an electrode, and adding an insulating material between the electrode and the first InP layer.
Further, the first InP layer is intrinsic InP, and the concentration of the non-intention doping is less than
(ii) a Or the first InP layer is semi-insulating InP, the doping element is Fe or Ru, and the doping concentration is greater than
。
The embodiment of the invention provides another technical scheme: a ridge waveguide semiconductor laser comprises a buffer layer and a quantum well which are sequentially grown on a substrate, wherein first InP layers are respectively grown on opposite sides of the quantum well in a butt joint mode, a covering layer and a contact layer are sequentially grown on the quantum well and the first InP layers, the region where the quantum well is located is provided with a ridge waveguide, the ridge waveguide is wrapped by the two first InP layers, and the growing height of the first InP layers is consistent with the height of the quantum well.
Compared with the prior art, the invention has the beneficial effects that: InP is grown on two sides of the laser quantum well in a butt joint mode, and the problem of high junction temperature of the device during operation is solved by utilizing the high thermal conductivity of the InP for heat dissipation; meanwhile, the InP grown in a butt joint mode on two sides increases the cavity length of the laser, and the ridge waveguide is wrapped, so that the laser is easy to cleave in production and preparation, the damage of cleaved cavity surfaces is avoided, the yield of the laser can be obviously improved, and the production cost is reduced; meanwhile, through chip process design and epitaxial growth design, the fact that no current is injected into the butt-jointed InP on two sides is guaranteed, the high-frequency performance of the laser is not affected, and the high modulation rate consistent with that of the short-cavity laser is guaranteed. Compared with the traditional ridge waveguide short-cavity ridge waveguide laser, the laser provided by the invention has the advantages of high modulation rate of the short-cavity laser, easy cleavage of the long-cavity laser and good heat dissipation performance.
Drawings
FIG. 1a is a top view of a ridge waveguide of a conventional ridge waveguide semiconductor laser;
FIG. 1b is a left side view of a ridge waveguide of a conventional ridge waveguide semiconductor laser;
FIG. 1c is a top view of a conventional ridge waveguide semiconductor laser electrode;
fig. 2 is a schematic structural diagram of a ridge waveguide semiconductor laser grating after being buried according to an embodiment of the present invention;
FIG. 3a is a front view of a ridge waveguide semiconductor laser device before a first InP layer is grown in butt joint manner according to an embodiment of the present invention
Fig. 3b is a top view of a ridge waveguide semiconductor laser according to an embodiment of the present invention before a first InP layer is grown in butt joint;
fig. 3c is a left side view of a ridge waveguide semiconductor laser according to an embodiment of the present invention before a first InP layer is grown in butt joint;
fig. 4a is a front view of a ridge waveguide semiconductor laser according to an embodiment of the present invention after a first InP layer is butt-grown;
fig. 4b is a top view of a ridge waveguide semiconductor laser according to an embodiment of the present invention after a first InP layer is grown in butt joint;
fig. 4c is a left side view of a ridge waveguide semiconductor laser according to an embodiment of the present invention after a first InP layer is butt-grown;
fig. 5a is a front view of an InP cladding layer and contact layer growth performed by a ridge waveguide semiconductor laser according to an embodiment of the present invention;
fig. 5b is a top view of an InP cladding layer and contact layer growth performed by a ridge waveguide semiconductor laser according to an embodiment of the present invention;
fig. 5c is a left side view of an InP cladding layer and contact layer growth performed by a ridge waveguide semiconductor laser according to an embodiment of the present invention;
fig. 6a is a front view of a ridge waveguide semiconductor laser with contact layers removed from both sides according to an embodiment of the present invention;
fig. 6b is a top view of a ridge waveguide semiconductor laser with the contact layer removed from both sides according to an embodiment of the present invention;
fig. 6c is a left side view of a ridge waveguide semiconductor laser with contact layers removed according to an embodiment of the present invention;
fig. 7a is a front view of a ridge waveguide semiconductor laser according to an embodiment of the present invention after fabrication;
fig. 7b is a top view of a ridge waveguide semiconductor laser according to an embodiment of the present invention after a ridge waveguide is manufactured;
fig. 7c is a left side view of a ridge waveguide semiconductor laser according to an embodiment of the present invention after a ridge waveguide is manufactured;
FIG. 7d is a cross-sectional view of FIG. 7 b;
fig. 8 is a schematic structural view of an upper opening electrical injection window of a ridge waveguide semiconductor laser according to an embodiment of the present invention;
fig. 9a is a front view of a first InP layer region cladding electrode butt-grown in a ridge waveguide semiconductor laser according to an embodiment of the present invention;
fig. 9b is a top view of a first InP layer region cladding electrode butt-grown on a ridge waveguide semiconductor laser according to an embodiment of the present invention;
fig. 9c is a left side view of a first InP layer region cladding electrode butt-grown on a ridge waveguide semiconductor laser according to an embodiment of the present invention;
FIG. 9d is a cross-sectional view of FIG. 9 b;
fig. 10a is a front view of a ridge waveguide semiconductor laser device with an electrodeless first InP region grown in butt-joint;
fig. 10b is a top view of an electrodeless region of a ridge waveguide semiconductor laser butt-grown first InP region according to an embodiment of the present invention;
fig. 10c is a left side view of an embodiment of the present invention showing an electrodeless structure in a first InP region grown by butt-joint growth of a ridge waveguide semiconductor laser;
FIG. 10d is a cross-sectional view of FIG. 10 b;
fig. 11 is a schematic diagram of conventional ridge waveguide semiconductor laser for cleaving ridge loss;
in the reference symbols: 1-a substrate; 2-a buffer layer; 3-an active layer; 4-a second InP layer; 5-a grating layer; 6-grating buried layer; 8-a contact layer; 9-a first InP layer; 10-a mask layer; 11-an electrode; 12-a cover layer; 13-a passivation layer; and 14-cleaving ridge loss.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 2 to 10d, an embodiment of the invention provides a method for manufacturing a ridge waveguide semiconductor laser, including the following steps: s1, growing a buffer layer 2 on a substrate 1, and growing a quantum well on the buffer layer 2; s2, respectively growing a first InP layer 9 in butt joint on one opposite side of the quantum well, wherein the height of the first InP layer 9 is consistent with that of the quantum well; s3, sequentially growing a cladding layer 12 and a contact layer 8 on the quantum well and the first InP layer 9, fabricating a ridge waveguide in a region where the quantum well is located, and wrapping the ridge waveguide with the two first InP layers 9; and S4, finishing the subsequent growth manufacturing process to obtain the laser. In the embodiment, InP is grown in a butt joint mode on two sides of a laser quantum well, and the problem of high junction temperature of a device during operation is solved by utilizing the high thermal conductivity of the InP for heat dissipation; meanwhile, the InP grown in a butt joint mode on two sides increases the cavity length of the laser, and the ridge waveguide is wrapped, so that the laser is easy to cleave in production and preparation, the damage of a cleaved cavity surface cannot occur, the yield of the laser can be obviously improved, and the production cost is reduced. Specifically, in order to facilitate the distinction of the grown InP layer from another InP layer, it is defined as the first InP layer 9. By growing the quantum well on the buffer layer 2, and then growing the first InP layers 9 on both sides of the quantum well in butt joint respectively, the problem of high junction temperature can be solved by using the high thermal conductivity of InP, and then growing the other layers and fabricating the ridge waveguide, so that the ridge waveguide is wrapped by the first InP layers 9 on both sides, and the problem of cavity surface damage in the conventional cleaving is solved, as shown in fig. 1a, 1b, 1c and 11, the cleaving ridge loss 14 shows the damage condition.
As an optimized solution of the embodiment of the present invention, please refer to fig. 2, in which the quantum well includes an active layer 3, a second InP layer 4, and a grating layer 5 sequentially grown on the buffer layer 2. The quantum well further comprises a grating buried layer 6, and after the grating is manufactured on the grating layer 5, the grating buried layer 6 is epitaxially grown on the grating layer 5. In this embodiment, the buffer layer 2, the active layer 3, the second InP layer 4, and the grating layer 5 are first epitaxially grown by MOCVD, then a grating is fabricated on the grating layer 5 by holographic or electron beam lithography, and then the grating buried layer 6 is secondarily epitaxially grown by MOCVD. The buffer layer 2 is an InP buffer layer 2, and the grating buried layer 6 is a grating buried InP layer.
As an optimization scheme of the embodiment of the present invention, please refer to fig. 3a, fig. 3b, fig. 3c, fig. 4a, fig. 4b, and fig. 4c, before the first InP layers 9 are grown in a butt joint manner, a mask layer 10 is grown on the quantum well, then one opposite side of the mask layer 10 is removed by photolithography and etching, then the part of the quantum well that does not cover the mask layer 10 is etched down by dry and wet methods until two gaps are formed in the buffer layer 2, then the first InP layers 9 are grown in a butt joint manner at the two gaps, and the two first InP layers 9 fill the two gaps. Along the direction between the two gaps, the sizes of the two gaps are smaller than the size of the mask layer 10 after photoetching and etching, and the mask layer is polishedThe sum of the size of the etched and etched mask layer 10 and the size of the two notches is the cavity length of the laser. The size of each notch is controlled between 1 and 500 mu m along the direction between the notches. The size of the mask layer 10 after the photolithography and etching is controlled to be 10-200 μm in the direction between the two notches. In this embodiment, after the grating buried layer 6 is epitaxially grown, SiO is grown 2 For the mask layer 10, the SiO on both sides of the laser is removed by photolithography and etching 2 Both sides are then etched into the buffer layer 2 in combination with dry and wet methods, see fig. 3a, 3b, 3 c. Then, SiO is added 2 Performing three-time epitaxy for the mask layer 10 by MOCVD, and growing a first InP layer 9 in a butt joint manner, as shown in fig. 4a, 4b, and 4c, where L1 is the length of the active layer 3 of the laser in a top view, and L2 and L3 are the lengths of the first InP layer grown in a butt joint manner on two sides of the laser, so that the laser cavity length L = L1+ L2+ L3, where the lengths of L2 and L3 may be equal or may not be equal; the first InP layer 9 grown by butt-joint growth may be intrinsic InP with an unintended doping concentration less than
Or doped with Fe or Ru in a concentration greater than
. Next, the mask layer 10 is removed and the growth of the entire p-doped InP cladding layer 12 and contact layer 8 is performed, see fig. 5a, 5b, 5 c. The contact layer 8 on both sides of the laser active layer 3 is then removed by means of photolithography and wet etching, see fig. 6a, 6b, 6 c. Then growing SiO again 2 For the mask layer 10, photolithography, dry etching and wet etching are combined, ridge waveguide fabrication is performed above the laser active layer 3, the first InP layer 9 with two butted sides is a planar structure, and the cross-sectional view in the top view is a schematic diagram of the laser ridge waveguide structure, as shown in fig. 7a, fig. 7b, fig. 7c and fig. 7 d. After the ridge waveguide is manufactured, the mask layer 10 is removed, the passivation layer 13 grows on the whole surface, the passivation layer 13 on the ridge waveguide is removed, and an electric injection window is manufactured, as shown in fig. 8. The area where the laser active layer 3 and the first InP layer 9 are grown butt-on covers the electrode 11, see fig. 9a, 9b, 9c and 9d, where it is bent downThe sectional view is a structural schematic diagram of the laser ridge waveguide covering electrode 11. And finally, carrying out subsequent conventional laser manufacturing processes of thinning, alloying, stripping, coating, stripping and the like to obtain the laser of the embodiment. In a further embodiment, shown in fig. 10a, 10b, 10c and 10d, the electrodes 11 are covered only on the laser active layer 3, and the regions where the first InP layer 9 is grown butt-on are not covered by electrodes 11. Fig. 9a, 9b, 9c and 9d, and fig. 10a, 10b, 10c and 10d are two different embodiments of the electrode 11.
As an optimized solution of the embodiment of the present invention, the subsequent growth process includes forming an electrode 11, and adding an insulating material between the electrode 11 and the first InP layer 9. In this embodiment, the first InP layer 9 grown in butt joint is covered with an electrode 11, and SiO is added between the first InP layer 9 and the electrode 11 2 Or SiN x An insulating material to prevent current injection into the first InP layer 9.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. A preparation method of a ridge waveguide semiconductor laser is characterized by comprising the following steps:
s1, growing a buffer layer on the substrate, and growing a quantum well on the buffer layer;
s2, respectively growing a first InP layer in butt joint with one opposite side of the quantum well, wherein the growing height of the first InP layer is consistent with that of the quantum well;
s3, sequentially growing a covering layer and a contact layer on the quantum well and the first InP layer, manufacturing a ridge waveguide in the region where the quantum well is located, and wrapping the ridge waveguide with the two first InP layers;
and S4, finishing the subsequent growth manufacturing process to obtain the laser.
2. A method for fabricating a ridge waveguide semiconductor laser as claimed in claim 1, wherein: the quantum well comprises an active layer, a second InP layer and a grating layer which are sequentially grown on the buffer layer.
3. A method for fabricating a ridge waveguide semiconductor laser as claimed in claim 2, wherein: the quantum well further comprises a grating buried layer, and after a grating is manufactured on the grating layer, the grating buried layer is epitaxially grown on the grating layer.
4. A method for fabricating a ridge waveguide semiconductor laser as claimed in claim 1, wherein: before the first InP layer is grown in a butt joint mode, a mask layer grows on the quantum well, one opposite side of the mask layer is removed through photoetching and etching, the part, which is not covered with the mask layer, of the quantum well is etched downwards through a dry method and a wet method until two notches are formed in the buffer layer, then the first InP layer grows in a butt joint mode at the two notches, and the two notches are filled with the two InP layers.
5. A method for fabricating a ridge waveguide semiconductor laser as claimed in claim 4, wherein: and along the direction between the two notches, the sizes of the two notches are smaller than the size of the mask layer after photoetching and etching, and the sum of the size of the mask layer after photoetching and etching and the size of the two notches is the cavity length of the laser.
6. A method for fabricating a ridge waveguide semiconductor laser as claimed in claim 5, wherein: the size of each notch is controlled between 1 and 500 mu m along the direction between the notches.
7. A method for fabricating a ridge waveguide semiconductor laser as claimed in claim 5, wherein: and the size of the mask layer after photoetching and etching is controlled to be 10-200 mu m along the direction between the two notches.
8. A method for fabricating a ridge waveguide semiconductor laser as claimed in claim 1, wherein: the subsequent growth manufacturing process comprises the step of manufacturing an electrode, and an insulating material is added between the electrode and the first InP layer.
9. A method for fabricating a ridge waveguide semiconductor laser as claimed in claim 1, wherein: the first InP layer is intrinsic InP with an unintended doping concentration less than
(ii) a Or the first InP layer is semi-insulating InP, the doping element is Fe or Ru, and the doping concentration is greater than that of the first InP layer
。
10. A ridge waveguide semiconductor laser characterized by: the quantum well structure comprises a buffer layer and a quantum well which are sequentially grown on a substrate, wherein first InP layers are respectively grown on opposite sides of the quantum well in a butt joint mode, a covering layer and a contact layer are sequentially grown on the quantum well and the first InP layers, the region where the quantum well is located is provided with a ridge waveguide, the ridge waveguide is wrapped by the two first InP layers, and the growing height of the first InP layers is consistent with the height of the quantum well.
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| CN117374179A (en) * | 2023-09-22 | 2024-01-09 | 武汉敏芯半导体股份有限公司 | Super-radiation light-emitting diode and manufacturing method thereof |
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