CN113540974A - Gain coupling distribution feedback type semiconductor laser and manufacturing method thereof - Google Patents
Gain coupling distribution feedback type semiconductor laser and manufacturing method thereof Download PDFInfo
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- CN113540974A CN113540974A CN202110818091.XA CN202110818091A CN113540974A CN 113540974 A CN113540974 A CN 113540974A CN 202110818091 A CN202110818091 A CN 202110818091A CN 113540974 A CN113540974 A CN 113540974A
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
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Abstract
The application discloses a gain coupling distribution feedback type semiconductor laser and a manufacturing method thereof, wherein the method comprises the steps of obtaining a lower structure body of the laser, wherein the lower structure body of the laser comprises a substrate, a buffer layer and a lower cladding which are sequentially stacked from bottom to top; a defect-free quantum dot array is epitaxially grown on the upper surface of the lower structure of the laser by adopting an in-situ laser-induced patterned epitaxy technology to serve as an active layer, so that a gain grating is formed; the Bragg wavelength of the gain grating is positioned in an effective gain area of the quantum dot array; epitaxially growing an upper cladding layer on the upper surface of the active layer, and growing a lower conductive layer on the lower surface of the lower structure of the laser; growing an insulating layer on the upper surface of the upper cladding, and etching the insulating layer to form a conductive region; and growing an upper conductive layer on the upper surface of the insulating layer to obtain the gain coupling distribution feedback type semiconductor laser. The active layer is grown by adopting an in-situ laser induced patterning epitaxy technology, so that defects can be avoided; the grating is not required to be prepared, pure gain coupling is realized, and the manufacturing process is very simple.
Description
Technical Field
The present application relates to the field of semiconductor technology, and in particular, to a gain-coupled distributed feedback semiconductor laser and a method for fabricating the same.
Background
The semiconductor Laser is called a semiconductor Laser Diode (LD), and has the advantages of small size, light weight, low power driving, high efficiency output, convenience in modulation, long service life, easiness in integration and the like. Semiconductor lasers can be classified into general Fabry-Perot (FP) lasers and Distributed Feedback (DFB) lasers, wherein the FP-LD has a simple manufacturing process and the DFB-LD has a complex manufacturing process.
The first method is to etch grating on the active layer directly or grow non-uniform active layer on the substrate with grating epitaxially to realize gain coupling; the second is to make an absorption grating with narrow band gap material near the active layer to periodically absorb the light field and realize gain coupling; the third is to introduce a 'conductivity type reversal' grating near the active layer, for example, a gate-type grating is made in a p-type material to form a buried gate junction, and the built-in potential thereof forms a barrier for preventing hole migration, so that holes injected into the active region from the p region side can only be injected from the grating gap to form non-uniform electrical injection, and periodic fluctuation of carrier concentration is formed in the active layer, thereby realizing gain coupling. The above approaches have different drawbacks: a large number of defects are introduced in the modes of etching and ion implantation, and the performance of the laser is influenced; the mode of epitaxially growing an active layer, manufacturing an absorption grating and manufacturing a conductive type reversal grating inevitably has a refractive index grating, and generates a refractive index coupling effect, so that pure gain coupling cannot be realized, and a phenomenon of unstable output mode of a laser due to dual-mode lasing can also occur; the common defects of the three modes are that grating preparation is required, the manufacturing process is complex, and the manufacturing cost is high.
Therefore, how to solve the above technical problems should be a great concern to those skilled in the art.
Disclosure of Invention
The present application provides a gain-coupled distributed feedback semiconductor laser and a method for fabricating the same, so as to simplify the fabrication process of the gain-coupled distributed feedback semiconductor laser, reduce the fabrication cost, achieve pure gain coupling, and avoid introducing defects.
In order to solve the above technical problem, the present application provides a method for manufacturing a gain-coupled distributed feedback semiconductor laser, including:
obtaining a lower laser structure body, wherein the lower laser structure body comprises a substrate, a buffer layer and a lower cladding which are sequentially stacked from bottom to top;
a defect-free quantum dot array is epitaxially grown on the upper surface of the lower structure body of the laser by adopting an in-situ laser induced patterning epitaxy technology to serve as an active layer, so that a gain grating is formed; the Bragg wavelength of the gain grating is positioned in an effective gain area of the quantum dot array;
epitaxially growing an upper cladding layer on the upper surface of the active layer, and growing a lower conductive layer on the lower surface of the laser lower structure;
growing an insulating layer on the upper surface of the upper cladding, and etching the insulating layer to form a conductive region;
and growing an upper conducting layer on the upper surface of the insulating layer to obtain the gain coupling distribution feedback type semiconductor laser.
Optionally, the epitaxially growing a defect-free quantum dot array on the upper surface of the lower laser structure by using an in-situ laser-induced patterned epitaxy technique as an active layer includes:
and a defect-free quantum dot array is epitaxially grown on the upper surface of the lower structure of the laser by adopting a molecular beam epitaxy technology to serve as an active layer.
Optionally, the epitaxially growing a defect-free quantum dot array on the upper surface of the lower laser structure by using an in-situ laser-induced patterned epitaxy technique as an active layer includes:
and epitaxially growing a defect-free quantum dot array on the upper surface of the lower structure of the laser by adopting a metal organic chemical vapor deposition epitaxy technology to serve as an active layer.
Optionally, before growing the insulating layer on the upper surface of the upper cladding layer, the method further includes:
etching the upper cladding layer to form ridge strips on the upper cladding layer;
correspondingly, growing an insulating layer on the upper surface of the upper cladding layer, and etching the insulating layer to form a conductive region includes:
and growing an insulating layer on the upper cladding layer except the upper surface of the ridge.
Optionally, when the defect-free quantum dot array is epitaxially grown, the number of coherent laser beams is greater than 2.
Optionally, before the obtaining of the lower laser structure, the lower laser structure includes a substrate, a buffer layer, and a lower cladding layer that are sequentially stacked from bottom to top, the method further includes:
obtaining the substrate;
epitaxially growing the buffer layer on the upper surface of the substrate;
epitaxially growing the lower cladding layer on the upper surface of the buffer layer.
Optionally, growing a lower conductive layer on the lower surface of the lower laser structure includes:
and growing a lower conductive layer on the lower surface of the lower structure body of the laser by adopting a magnetron sputtering method.
The present application further provides a gain-coupled distributed feedback semiconductor laser, comprising:
a substrate;
a lower conductive layer located on the lower surface of the substrate;
the buffer layer, the lower cladding, the active layer, the upper cladding, the insulating layer and the upper conducting layer are sequentially stacked on the upper surface of the substrate, and the upper cladding comprises a conducting region;
the active layer is a defect-free quantum dot array grown by adopting an in-situ laser induced patterning epitaxy technology, the quantum dot array forms a gain grating, and the Bragg wavelength of the gain grating is located in an effective gain area of the quantum dot array.
Optionally, the upper cladding layer includes a ridge, and the conductive region is an upper surface of the ridge.
Optionally, the material of the lower conductive layer and the upper conductive layer is any one or any combination of the following:
gold, aluminum, nickel, titanium, chromium, silver, germanium, platinum.
The method for manufacturing the gain coupling distribution feedback type semiconductor laser comprises the steps of obtaining a lower structure body of the laser, wherein the lower structure body of the laser comprises a substrate, a buffer layer and a lower cladding which are sequentially stacked from bottom to top; a defect-free quantum dot array is epitaxially grown on the upper surface of the lower structure body of the laser by adopting an in-situ laser induced patterning epitaxy technology to serve as an active layer; the Bragg wavelength is positioned in an effective gain area of the quantum dot array; epitaxially growing an upper cladding layer on the upper surface of the active layer, and growing a lower conductive layer on the lower surface of the laser lower structure; growing an insulating layer on the upper surface of the upper cladding, and etching the insulating layer to form a conductive region; and growing an upper conducting layer on the upper surface of the insulating layer to obtain the gain coupling distribution feedback type semiconductor laser.
Therefore, according to the manufacturing method, after the lower structure of the laser is obtained, the active layer is grown by adopting an in-situ laser induced patterned epitaxy technology, the upper cladding layer is grown on the upper surface of the active layer, the lower conducting layer is grown on the lower surface of the lower structure of the laser, and then the insulating layer and the upper conducting layer are sequentially grown on the upper surface of the upper cladding layer to obtain the gain coupling distribution feedback type semiconductor laser; the Bragg wavelength is positioned in an effective gain area of the quantum dot array, and after carrier injection, the carrier is limited in a quantum well array formed by the quantum dot array, so that a gain grating is formed, the step of preparing the grating is not needed, the manufacturing cost can be reduced, the refractive index grating can be avoided, the refractive index coupling effect is avoided, the pure gain coupling is realized, and the dual-mode lasing can be avoided; the whole manufacturing process of the gain coupling distribution feedback type semiconductor laser device is the same as the process flow of manufacturing a common single transverse mode FP-LD, and the manufacturing process is very simple.
In addition, the application also provides a gain coupling distribution feedback type semiconductor laser with the advantages.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing a gain-coupled distributed feedback semiconductor laser according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of the relationship between the quantum dot array and the formed gain grating;
fig. 3 is a flowchart of another method for manufacturing a gain-coupled distributed feedback semiconductor laser according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a gain-coupled distributed feedback semiconductor laser according to an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of a gain-coupled distributed feedback semiconductor laser according to an embodiment of the present disclosure.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background section, when a gain-coupled distributed feedback semiconductor laser is manufactured in different conventional manufacturing methods, a large number of defects are introduced in etching and ion implantation methods, which affect the performance of the laser; the mode of epitaxially growing an active layer, manufacturing an absorption grating and manufacturing a conductive type reversal grating inevitably has a refractive index grating, and generates a refractive index coupling effect, so that pure gain coupling cannot be realized, and a phenomenon of unstable output mode of a laser due to dual-mode lasing can also occur; the common defects of the three modes are that grating preparation is required, the manufacturing process is complex, and the manufacturing cost is high.
In view of the above, the present application provides a method for fabricating a gain-coupled distributed feedback semiconductor laser, please refer to fig. 1, where fig. 1 is a flowchart of a method for fabricating a gain-coupled distributed feedback semiconductor laser according to an embodiment of the present application, the method includes:
step S101: and obtaining a lower laser structure body which comprises a substrate, a buffer layer and a lower cladding which are sequentially stacked from bottom to top.
Step S102: a defect-free quantum dot array is epitaxially grown on the upper surface of the lower structure body of the laser by adopting an in-situ laser induced patterning epitaxy technology to serve as an active layer, so that a gain grating is formed; the Bragg wavelength of the gain grating is located in an effective gain region of the quantum dot array.
The method for epitaxially growing the defect-free quantum dot array is not particularly limited and can be set by itself. For example, as an implementable manner, the epitaxially growing a defect-free quantum dot array on the upper surface of the laser lower structure by using the in-situ laser-induced patterned epitaxy technology as an active layer includes: and a defect-free quantum dot array is epitaxially grown on the upper surface of the lower structure of the laser by adopting a molecular beam epitaxy technology to serve as an active layer. As another practical way, the epitaxially growing a defect-free quantum dot array on the upper surface of the lower laser structure by using an in-situ laser-induced patterned epitaxy technique as an active layer includes: and epitaxially growing a defect-free quantum dot array on the upper surface of the lower structure of the laser by adopting a metal organic chemical vapor deposition epitaxy technology to serve as an active layer.
It should be noted that the laser used in the epitaxial growth of the quantum dot array is a pulse coherent light source, and the pulse width is in the nanosecond level; all coherent laser beams overlap at the wafer; the epitaxial growth parameters of the quantum dot array are the same as those of the conventional epitaxial quantum dot.
The number of coherent laser beams is not particularly limited in this application, as the case may be. For example, the number of coherent laser beams is 2, or the number of coherent laser beams is more than 2.
The period of the quantum dot array can be designed, so that the Bragg wavelength is positioned in the effective gain region of the quantum dot array, and the relational expression between the Bragg wavelength and the period of the quantum dot array is as follows:
λB＝2nΛ (1)
wherein λ isBThe wavelength is Bragg wavelength, Λ is the period of the quantum dot array, n is the effective refractive index of the active region, and the Bragg wavelength is equal to the wavelength of the laser output by the gain coupling distribution feedback type semiconductor laser.
Fig. 2 shows a schematic relationship diagram of the quantum dot array and the formed gain grating, in which the quantum dot array is periodically arranged, and the region corresponding to the quantum dot array forms the gain grating.
Step S103: and epitaxially growing an upper cladding layer on the upper surface of the active layer, and growing a lower conductive layer on the lower surface of the laser lower structure.
Optionally, a lower conductive layer is grown on the lower surface of the lower structure of the laser by a magnetron sputtering method. The magnetron sputtering method has the characteristics of high growth speed, good uniformity of a grown lower conductive layer and good compactness, so that the manufacturing efficiency of the gain coupling distribution feedback type semiconductor laser can be improved, and the quality of the gain coupling distribution feedback type semiconductor laser is improved. However, the present application is not limited to this, and the lower conductive layer may be prepared by thermal evaporation.
Step S104: and growing an insulating layer on the upper surface of the upper cladding, and etching the insulating layer to form a conductive region.
The growth mode of the insulating layer is not particularly limited in this application and can be selected by itself. For example, a chemical vapor deposition method, a plasma-enhanced chemical vapor deposition method, or the like can be employed.
The method for etching the insulating layer is not particularly limited in the application, and can be selected by self. For example, dry etching or wet etching may be used.
Note that the etching depth when the conductive region is formed is the thickness of the insulating layer.
Step S105: and growing an upper conducting layer on the upper surface of the insulating layer to obtain the gain coupling distribution feedback type semiconductor laser.
The growth mode of the upper conducting layer can adopt a magnetron sputtering method, and the magnetron sputtering method has the characteristics of high growth speed, good uniformity of the grown upper conducting layer and good compactness, so that the manufacturing efficiency of the gain coupling distribution feedback type semiconductor laser can be improved, and the quality of the gain coupling distribution feedback type semiconductor laser is improved.
The conventional method for manufacturing a gain coupling distributed feedback semiconductor laser needs to manufacture a grating, and inevitably has a refractive index grating, so that pure gain coupling cannot be realized, and the refractive index grating can increase Bragg wavelength (lambda)B) Two sides (λ ═ λ)B± Δ λ) in a dual mode. The gain coupling obtained by the manufacturing method in the applicationDistributed feedback semiconductor laser, the distributed feedback mode no longer related to lambdaBThe mode with the lowest threshold value exists symmetrically, so that single-mode lasing can be realized, and particularly, the gain-coupled distributed feedback type semiconductor laser purely gain-coupled laser obtained in the application has the distributed feedback mode with the lowest threshold value at lambdaBThe laser is excited and has the largest difference with the sub-low Mode threshold gain, so that the gain coupling distribution feedback type semiconductor laser in the application is the single-Mode laser with high Side Mode Ratio (SMR).
The reason why the gain coupling distribution feedback type semiconductor laser does not have the refractive index grating is that the quantum dot array and the active layer material have similar refractive indexes, and the refractive index of the whole active layer does not change periodically or the refractive index changes periodically and is not enough to form the refractive index grating.
According to the manufacturing method, after a lower structure body of a laser is obtained, an active layer grows by adopting an in-situ laser induced patterning epitaxial technology, an upper cladding grows on the upper surface of the active layer, a lower conducting layer grows on the lower surface of the lower structure body of the laser, and then an insulating layer and an upper conducting layer sequentially grow on the upper surface of the upper cladding to obtain the gain coupling distribution feedback type semiconductor laser; the Bragg wavelength is positioned in an effective gain area of the quantum dot array, and after carrier injection, the carrier is limited in a quantum well array formed by the quantum dot array, so that a gain grating is formed, the step of preparing the grating is not needed, the manufacturing cost can be reduced, the refractive index grating can be avoided, the refractive index coupling effect is avoided, the pure gain coupling is realized, and the dual-mode lasing can be avoided; the whole manufacturing process of the gain coupling distribution feedback type semiconductor laser device is the same as the process flow of manufacturing a common single transverse mode FP-LD, and the manufacturing process is very simple.
Referring to fig. 3, fig. 3 is a flowchart of another method for manufacturing a gain-coupled distributed feedback semiconductor laser according to an embodiment of the present application, where the method includes:
step S201: and obtaining a lower laser structure body which comprises a substrate, a buffer layer and a lower cladding which are sequentially stacked from bottom to top.
Step S202: growing a defect-free quantum dot array on the upper surface of the lower structure body of the laser by adopting an in-situ laser induced patterning epitaxy technology to serve as an active layer to form a gain grating; the Bragg wavelength of the gain grating is located in an effective gain region of the quantum dot array.
Step S203: and epitaxially growing an upper cladding layer on the upper surface of the active layer, and growing a lower conductive layer on the lower surface of the laser lower structure.
Step S204: and etching the upper cladding layer to form a ridge on the upper cladding layer.
It should be noted that the etching depth when etching the upper cladding layer to form the ridge is less than the thickness of the upper cladding layer, and the difference between the etching depth and the thickness of the upper cladding layer is between 50 nm and 100 nm.
As a specific implementation manner, the upper cladding layer may be etched to form the ridge by dry etching. However, the present application is not limited to this, and as another practicable manner, the upper cladding layer may be etched by wet etching to form the ridge.
Step S205: and growing an insulating layer on the upper cladding layer except the upper surface of the ridge.
Specifically, an insulating layer grows on each surface of the upper cladding and the ridge, then the insulating layer on the upper surface of the ridge is etched, and the insulating layers at other positions are remained to expose the surface of the upper cladding.
Step S206: and growing an upper conducting layer on the upper surface of the insulating layer to obtain the gain coupling distribution feedback type semiconductor laser.
On the basis of any of the foregoing embodiments, in an embodiment of the present application, before the obtaining a lower laser structure, the lower laser structure includes a substrate, a buffer layer, and a lower cladding layer that are sequentially stacked from bottom to top, the method further includes:
obtaining the substrate;
epitaxially growing the buffer layer on the upper surface of the substrate;
epitaxially growing the lower cladding layer on the upper surface of the buffer layer.
The substrate is generally a wafer substrate, the buffer layer is a homogeneous material buffer layer, and the epitaxial growth mode of the buffer layer is not particularly limited and can be set by itself. For example, the buffer layer may be epitaxially grown on the upper surface of the substrate by a metal organic chemical vapor deposition method, or may be epitaxially grown on the upper surface of the substrate by a molecular beam epitaxy technique.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a gain-coupled distributed feedback semiconductor laser according to an embodiment of the present disclosure, which includes:
a substrate 1;
a lower conductive layer 8 located on the lower surface of the substrate 1;
the buffer layer 2, the lower cladding layer 3, the active layer 4, the upper cladding layer 5, the insulating layer 6 and the upper conducting layer 7 are sequentially stacked on the upper surface of the substrate 1, and the upper cladding layer 5 comprises a conducting region;
the active layer 4 is a defect-free quantum dot array grown by adopting an in-situ laser induced patterned epitaxy technology, the quantum dot array forms a gain grating, and the Bragg wavelength of the gain grating is located in an effective gain area of the quantum dot array.
The material of the substrate 1 is not particularly limited in this application, and the substrate 1 is generally a wafer substrate.
The insulating layer 6 includes, but is not limited to, a silicon dioxide layer or a silicon nitride layer.
The upper conductive layer 7 functions to inject current into the active layer 4 of the gain-coupled distributed feedback semiconductor laser, and the materials of the upper conductive layer 7 and the lower conductive layer 8 are not particularly limited in this application, as appropriate. Optionally, the material of the lower conductive layer 8 and the upper conductive layer 7 includes, but is not limited to, any one or any combination of the following:
gold, aluminum, nickel, titanium, chromium, silver, germanium, platinum.
In the embodiment of the invention, when the gain-coupled distributed feedback type semiconductor laser is manufactured, after a lower laser structure body including a substrate 1, a buffer layer 2 and a lower cladding layer 3 is obtained, an active layer 4 is grown by adopting an in-situ laser induced patterned epitaxy technology, an upper cladding layer 5 is grown on the upper surface of the active layer 4, a lower conducting layer 8 is grown on the lower surface of the lower laser structure body, and then an insulating layer 6 and an upper conducting layer 7 are sequentially grown on the upper surface of the upper cladding layer 5, so that the gain-coupled distributed feedback type semiconductor laser is obtained, the active layer 4 is grown by the in-situ laser induced patterned epitaxy technology, the defect of the traditional gain-coupled distributed feedback type semiconductor laser, which is introduced by photoetching or ion implantation, can be avoided due to the fact that the active region is a defect-free quantum dot array, and the absorption loss caused by the defect can be avoided, and the lasing threshold can be greatly reduced, The output power is increased and the service life is prolonged; the Bragg wavelength is positioned in an effective gain area of the quantum dot array, and after carrier injection, the carrier is limited in a quantum well array formed by the quantum dot array, so that a gain grating is formed, the step of preparing the grating is not needed, the manufacturing cost can be reduced, the refractive index grating can be avoided, the refractive index coupling effect is avoided, the pure gain coupling is realized, and the dual-mode lasing can be avoided; the whole manufacturing process of the gain coupling distribution feedback type semiconductor laser device is the same as the process flow of manufacturing a common single transverse mode FP-LD, and the manufacturing process is very simple.
Referring to fig. 5, fig. 5 is a schematic structural diagram of another gain-coupled distributed feedback semiconductor laser according to an embodiment of the present disclosure. On the basis of the above embodiment, the upper cladding 5 includes the ridge 9 therein, and the conductive region is the upper surface of the ridge 9.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The gain-coupled distributed feedback semiconductor laser and the manufacturing method thereof provided by the present application are described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
Claims (10)
1. A method for manufacturing a gain coupling distribution feedback type semiconductor laser is characterized by comprising the following steps:
obtaining a lower laser structure body, wherein the lower laser structure body comprises a substrate, a buffer layer and a lower cladding which are sequentially stacked from bottom to top;
a defect-free quantum dot array is epitaxially grown on the upper surface of the lower structure body of the laser by adopting an in-situ laser induced patterning epitaxy technology to serve as an active layer, so that a gain grating is formed; the Bragg wavelength of the gain grating is positioned in an effective gain area of the quantum dot array;
epitaxially growing an upper cladding layer on the upper surface of the active layer, and growing a lower conductive layer on the lower surface of the laser lower structure;
growing an insulating layer on the upper surface of the upper cladding, and etching the insulating layer to form a conductive region;
and growing an upper conducting layer on the upper surface of the insulating layer to obtain the gain coupling distribution feedback type semiconductor laser.
2. The method according to claim 1, wherein the step of epitaxially growing a defect-free quantum dot array on the upper surface of the lower structure of the laser as an active layer by using an in-situ laser-induced patterned epitaxy technique comprises:
and a defect-free quantum dot array is epitaxially grown on the upper surface of the lower structure of the laser by adopting a molecular beam epitaxy technology to serve as an active layer.
3. The method according to claim 1, wherein the step of epitaxially growing a defect-free quantum dot array on the upper surface of the lower structure of the laser as an active layer by using an in-situ laser-induced patterned epitaxy technique comprises:
and epitaxially growing a defect-free quantum dot array on the upper surface of the lower structure of the laser by adopting a metal organic chemical vapor deposition epitaxy technology to serve as an active layer.
4. The method of fabricating a gain-coupled distributed feedback semiconductor laser as in claim 1, further comprising, prior to growing an insulating layer on the upper surface of said upper cladding layer:
etching the upper cladding layer to form ridge strips on the upper cladding layer;
correspondingly, growing an insulating layer on the upper surface of the upper cladding layer, and etching the insulating layer to form a conductive region includes:
and growing an insulating layer on the upper cladding layer except the upper surface of the ridge.
5. The method of claim 1 wherein the number of coherent laser beams is greater than 2 during epitaxial growth of the defect-free quantum dot array.
6. The method for fabricating a gain-coupled distributed feedback semiconductor laser as claimed in any one of claims 1 to 5, wherein before said obtaining a lower laser structure, said lower laser structure comprising a substrate, a buffer layer and a lower cladding layer stacked in this order from bottom to top, further comprises:
obtaining the substrate;
epitaxially growing the buffer layer on the upper surface of the substrate;
epitaxially growing the lower cladding layer on the upper surface of the buffer layer.
7. The method of claim 6 wherein growing a lower conductive layer on a lower surface of the lower laser structure comprises:
and growing a lower conductive layer on the lower surface of the lower structure body of the laser by adopting a magnetron sputtering method.
8. A gain-coupled distributed feedback semiconductor laser, comprising:
a substrate;
a lower conductive layer located on the lower surface of the substrate;
the buffer layer, the lower cladding, the active layer, the upper cladding, the insulating layer and the upper conducting layer are sequentially stacked on the upper surface of the substrate, and the upper cladding comprises a conducting region;
the active layer is a defect-free quantum dot array grown by adopting an in-situ laser induced patterning epitaxy technology, the quantum dot array forms a gain grating, and the Bragg wavelength of the gain grating is located in an effective gain area of the quantum dot array.
9. The gain-coupled distributed feedback semiconductor laser as claimed in claim 8 wherein said upper cladding layer includes a ridge, and said conductive region is an upper surface of said ridge.
10. A gain-coupled distributed feedback semiconductor laser as claimed in claim 8 or 9 wherein the material of said lower and upper conducting layers is any one or any combination of:
gold, aluminum, nickel, titanium, chromium, silver, germanium, platinum.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2468193Y (en) * | 2001-02-27 | 2001-12-26 | 北京福创光电子股份有限公司 | Electric current modulation gain coupling laser |
| WO2005112210A1 (en) * | 2004-05-14 | 2005-11-24 | Bookham Technology Plc | Semiconductor devices including gratings formed using quantum dots and method of manufacture |
| US20070128839A1 (en) * | 2005-12-06 | 2007-06-07 | Jin Soo Kim | Quantum dot laser diode and method of manufacturing the same |
| JP2007335761A (en) * | 2006-06-16 | 2007-12-27 | Oki Electric Ind Co Ltd | Distributed feedback semiconductor laser |
| CN102034909A (en) * | 2009-09-30 | 2011-04-27 | 中国科学院半导体研究所 | Method for epitaxial growth of molecular beam of low-density InAs quantum dots |
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| JP3204474B2 (en) * | 1993-03-01 | 2001-09-04 | キヤノン株式会社 | Gain-coupled distributed feedback semiconductor laser and its fabrication method |
| CN106785884A (en) * | 2016-11-15 | 2017-05-31 | 中国科学院福建物质结构研究所 | A kind of semiconductor laser with pectination CURRENT DISTRIBUTION and preparation method thereof |
| CN107424914A (en) * | 2017-07-11 | 2017-12-01 | 苏州大学 | The method of growing patterned quantum dot |
| CN107611776B (en) * | 2017-10-13 | 2020-06-09 | 中国科学院长春光学精密机械与物理研究所 | Gain coupling distributed feedback semiconductor laser and manufacturing method thereof |
| CN112072466A (en) * | 2020-09-08 | 2020-12-11 | 因林光电科技(苏州)有限公司 | Semiconductor laser and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2468193Y (en) * | 2001-02-27 | 2001-12-26 | 北京福创光电子股份有限公司 | Electric current modulation gain coupling laser |
| WO2005112210A1 (en) * | 2004-05-14 | 2005-11-24 | Bookham Technology Plc | Semiconductor devices including gratings formed using quantum dots and method of manufacture |
| US20070128839A1 (en) * | 2005-12-06 | 2007-06-07 | Jin Soo Kim | Quantum dot laser diode and method of manufacturing the same |
| JP2007335761A (en) * | 2006-06-16 | 2007-12-27 | Oki Electric Ind Co Ltd | Distributed feedback semiconductor laser |
| CN102034909A (en) * | 2009-09-30 | 2011-04-27 | 中国科学院半导体研究所 | Method for epitaxial growth of molecular beam of low-density InAs quantum dots |
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