CN102034909A - Method for epitaxial growth of molecular beam of low-density InAs quantum dots - Google Patents
Method for epitaxial growth of molecular beam of low-density InAs quantum dots Download PDFInfo
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Abstract
The invention discloses a method for epitaxial growth of a molecular beam of low-density InAs quantum dots, which comprises the following steps of: putting a GaAs substrate on a sample support, and introducing the GaAs substrate into a sample introduction room for baking; after baking, introducing the GaAs substrate into a preparation room, and degassing the GaAs substrate; introducing degassed GaAs substrate into a growth room, heating a heater of the GaAs substrate, and deoxidizing the GaAs substrate under the protection of As; cooling the heater of the GaAs substrate to the growth temperature, growing a GaAs buffer layer, and doping Si; growing a plurality of pairs of GaAs/AlGaAs distributed Bragg reflectors; reducing the growth temperature, and growing low-density quantum dots; growing an InGaAs(Sb) covering layer; growing coupled quantum dots to expand the wavelength; growing a doped GaAs layer; and manufacturing upper and lower electrodes. By using the method, the luminous efficiency of the quantum dots is effectively improved, the collection efficiency is improved, and the regulation and control of the wavelength are realized.
Description
Technical field
The present invention relates to technical field of semiconductor, relate in particular to a kind of growing method of low-density quantum dot, particularly about a kind of on the GaAs substrate molecular beam epitaxial growth (MBE) method of growth low-density InAs quantum dot.
Background technology
In recent years, along with the development of preparation high-quality self-organized quantum dot technology, semiconductor-quantum-point more and more causes people's interest in the research of aspects such as quantum optices, quantum communications.These quantum dots are not only finally realized the three-dimensional restriction to charge carrier, the energy that causes charge carrier quantization and have discrete energy level on three dimensions, present outside the shell filling characteristic of some atom, but also be in natively in the solid system, can be by regulating the photon that produces non-classical Distribution Statistics.
Experimental observation is to the photic or electric antibunching effect that causes photon, and successfully prepares photic and electricity causes single-photon source.The coupling of self-organizing single quantum dot and high-quality microcavity can also be used to studying the chamber quantrm electrodynamics.In addition, also might to produce entangled photons right for the self-organizing single quantum dot.Because research, the especially research to quantum dot single-photon source to single quantum dot at first need quantum dot is isolated mutually so that single quantum dot is excited.
Although the characteristics of luminescence of self-organized quantum dot is fine, owing to utilize the quantum dot (as the InAs quantum dot) of this growth pattern preparation to have natural high density characteristic.Therefore, in order to overcome the high density of SK growth pattern growth InAs, people often just stop deposit when deposit InAs has just reached critical thickness, obtain small size low-density InAs quantum dot by former temperature method for annealing then.
Yet the density of the quantum dot for preparing under this condition still is difficult to satisfy the requirement that the low-density quantum dot is used, and size is also less, and emission wavelength is shorter, can't satisfy the requirement of the communication window of 1.3 μ m of optical fiber communication needs or 1.55 mum wavelengths.
At present people attempt certain methods and limit number that quantum dot is excited or the emission that filters out other quantum dot, for example emission of some quantum dots below the Metal Contact of placing the band sub-micron pore above the quantum dot is selected.But this method needs the high accuracy photoetching, and because at metal aperture place diffraction, the extraction efficiency when being coupled with monomode fiber is restricted; Owing to lacking spatial limitation, charge carrier make external quantum efficiency very low again.
In a word, the single-photon source long wavelength quantum dot of Cheng Shu growth low-density and satisfied and optical fiber coupling is very difficult.Just because of this, also there is not ripe low-density quantum dot single-photon light source in the market.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to improve a kind of molecular beam epitaxy accretion method of low-density InAs quantum dot, with by to the innovation of conventional I nAs Quantum Dots Growth technology and the brand-new design of quantum dot active region structure, reach the purpose of control quantum dot density and regulation and control wavelength.
(2) technical scheme
For achieving the above object, the invention provides a kind of molecular beam epitaxy accretion method of low-density InAs quantum dot, this method comprises:
The GaAs substrate is placed in the sample holder, and introduces Sample Room and toast;
After baking finishes, the GaAs substrate is introduced preparation room, and the GaAs substrate is carried out degassing processing;
To remove the GaAs substrate of gas and introduce the growth room, and the heater of GaAs substrate will be heated up, under the situation that the As protection is arranged, the GaAs substrate be carried out deoxidation;
The heter temperature of GaAs substrate is reduced to growth temperature, growth GaAs resilient coating, and doping Si;
It is many to the GaAs/AlGaAs distributed bragg reflector mirror to grow;
Reduce growth temperature, growth low-density quantum dot;
Growth InGaAs (Sb) cap rock;
The growth coupling quantum spot;
Grow doping GaAs ohmic contact layer is used to prepare top electrode;
Make upper/lower electrode, finish electricity and cause the single photon preparation of devices.
In the such scheme, described introducing Sample Room toasts, and is to carry out under 180～250 degrees centigrade temperature conditions.
In the such scheme, described the GaAs substrate is carried out degassing processing, carry out under 400～450 degrees celsius, atmospheric pressure reduces to 10 in preparation room
-8Show when Torr is following that degasification finishes.
In the such scheme, describedly the GaAs substrate is carried out deoxidation having under the situation of As protection, the deoxidation temperature scope is 580 to 620 degrees centigrade, and deaeration time is 5 minutes.
In the such scheme, in deoxidation process, the atom of observing substrate surface by reflection high energy electron diffraction is the structure situation again, determines whether deoxidation.
In the such scheme, described heter temperature with the GaAs substrate is reduced to growth temperature, growth GaAs resilient coating, and in the step of doping Si, growth temperature is 580～620 degrees centigrade, growth GaAs resilient coating 500nm, and growth rate is 1 μ m/h, the V/III ratio is controlled in 15～25 scopes, and the doping content of Si is 2 * 10
18/ cm
3
In the such scheme, in the many steps of described growth, be to adopt at quantum dot active region upper and lower growth GaAs/Al to the GaAs/AlGaAs distributed bragg reflector mirror
0.9Ga
0.1The mode that As distributed Bragg grating forms resonant cavity increases collection efficiency, GaAs and Al
0.9Ga
0.1The thickness of As can be adjusted according to emission wavelength, and for example, emission wavelength is about 965nm, and the thickness of desirable GaAs is 68.57nm, Al
0.9Ga
0.1The thickness of As is 80.69nm, and the doping content of Si is 2 * 10
18/ cm
3
In the such scheme, described growth low-density quantum dot, in the step of growth low-density quantum dot, the growth rate of low-density quantum dot is 0.0005～0.02 μ m/h, dead time is the 1～20s that pauses, the V/III ratio is controlled in 5～25 scopes, and growth temperature is reduced for 500～560 degrees centigrade, and the thickness of illuvium is 1.8～2.1 monoatomic layers.
In the such scheme, in the step of described growth GaAs cap rock, be to adopt the method for InGaAs (Sb) cap rock to expand wavelength, the thickness of InGaAs (Sb) cap rock is 3～6nm.
In the such scheme, the growth of described coupling quantum spot has adopted the method for double-deck Coupling point to expand wavelength to 1.55 micron.When growth second layer Coupling point, adopted the regulation and control separator, annealing process.Separation layer thickness is 5-15nm; The separator annealing temperature is: 550-650 degree centigrade; The separator annealing time is 10-600s;
In the such scheme, in the step of described grow doping GaAs ohmic contact layer, the thickness of Doped GaAs ohmic contact layer is 30nm, and the doping content of Be is 5 * 10
18/ cm
3
(3) beneficial effect
The molecular beam epitaxy accretion method of this low-density InAs quantum dot provided by the invention, the size and the density of the mobility by regulation and control In atom and the surface concentration control quantum dot of migration length and As atom, increase the collection efficiency of photon by distributed Bragg grating (DBR), regulate and control wavelength by InGaAs (Sb) cap rock or coupling quantum spot.This technology and structure can freely be controlled quantum dot density (1 * 10
7～1 * 10
9/ cm
2), effectively improve quantum dot light emitting efficient, the regulation and control (850nm～1600nm) that improves collection efficiency and realized wavelength.Be suitable for the production of low-density quantum dot light source and further research and development.
Description of drawings
Fig. 1 is the flow chart of the molecular beam epitaxy accretion method of low-density InAs quantum dot provided by the invention;
Fig. 2 is an individual layer low-density Quantum Dots Growth structure;
Fig. 3 is a coupling low-density Quantum Dots Growth structure;
Fig. 4 is atomic force microscope (AFM) figure according to the different quantum dot densities of above-mentioned technology growth;
Fig. 5 is coupling quantum spot transmission electron microscope (TEM) shape appearance figure;
Fig. 6 is a cryo-microscope PL spectrum;
Fig. 7 is Bragg mirror (DBR) reflectance spectrum
Fig. 8 (a) pulse current injects second order correlation function down, and following second order correlation function is annotated in Fig. 8 (b) light pulse.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
In order to realize the growth of high-quality low-density quantum dot, the present invention has adopted following technical scheme: adopted molecular beam epitaxial method; Adopt the growth of GaAs substrate; The growth temperature of low-density quantum dot is controlled in the 500-560 degree centigrade of scope; The V/III ratio is controlled in the 5-25 scope; In growth line is controlled in the 0.0005-0.02 μ m/h scope; Adopt growth to pause and further control the length of In atomic migration.In order to increase collection efficiency, at quantum dot active region upper and lower growth GaAs/AlGaAs distributed Bragg grating (DBR); In order to regulate and control the quantum dot wavelength, the present invention has adopted the method for InGaAs (Sb) cap rock, and wherein Sb can further expand wavelength.For wavelength is expanded to 1.55 micron wavebands, the present invention has adopted the method for double-deck Coupling point.When growth second layer Coupling point, the present invention has adopted the regulation and control separator, series of process measures such as annealing.
According to above-mentioned technology and structural design scheme, the present invention has following feature:
1, adopts molecular beam epitaxial growth (MBE) mode;
2, adopted and the distinguishing growth conditions of traditional SK Quantum Dots Growth pattern, feature is growth rate and higher growth temperature slowly, and behind the growth ending to the annealing of quantum dot, specific as follows: growth temperature is controlled in the 580-620 degree centigrade of scope; The V/III ratio is controlled in the 5-25 scope; In growth line is controlled in the 0.0005-0.02 μ m/h scope; Dead time: 1-20s; Quantum dot annealing time: 10-300s; Quantum dot annealing temperature: 500-580 degree centigrade;
3, adopt mode to increase collection efficiency at quantum dot active region upper and lower growth GaAs/AlGaAs distributed Bragg grating (DBR) formation resonant cavity;
4, adopt the method for InGaAs (Sb) cap rock to expand wavelength, the especially employing of Sb element;
5, adopted the method for double-deck Coupling point to expand wavelength to 1.55 micron.When growth second layer Coupling point, the present invention has adopted the regulation and control separator, series of process measures such as annealing.Concrete feature is as follows: separation layer thickness is 5-15nm; The separator annealing temperature is: 550-650 degree centigrade; The separator annealing time is 10-600s.
As shown in Figure 1, Fig. 1 is the flow chart of the molecular beam epitaxy accretion method of low-density InAs quantum dot provided by the invention, and this method may further comprise the steps:
Step 101: the GaAs substrate is placed in the sample holder, and introduces Sample Room and toast;
In this step, described introducing Sample Room toasts, and is to toast under 180～250 degrees centigrade temperature conditions.
Step 102: after baking finishes, the GaAs substrate is introduced preparation room, and the GaAs substrate is carried out degassing processing;
In this step, described the GaAs substrate being carried out degassing processing, is to carry out degassing processing under 400～450 degrees celsius, and atmospheric pressure reduces to 10 in preparation room
-8Show when Torr is following that degasification finishes.
Step 103: the GaAs substrate that will remove gas is introduced the growth room, and the heater of GaAs substrate is heated up, and under the situation that the As protection is arranged the GaAs substrate is carried out deoxidation;
In this step, describedly the GaAs substrate is carried out deoxidation having under the situation of As protection, the deoxidation temperature scope is 580 to 620 degrees centigrade, and deaeration time is 5 minutes.In deoxidation process, the atom of observing substrate surface by reflection high energy electron diffraction is the structure situation again, determines whether deoxidation.
Step 104: the heter temperature of GaAs substrate is reduced to growth temperature, growth GaAs resilient coating, and doping Si;
In this step, growth temperature is 580～620 degrees centigrade, growth GaAs resilient coating 500nm, and growth rate is 1 μ m/h, and the V/III ratio is controlled in 15～25 scopes, and the doping content of Si is 2 * 10
18/ cm
3
Step 105: it is many to the GaAs/AlGaAs distributed bragg reflector mirror to grow;
In this step, adopt at quantum dot active region upper and lower growth GaAs/Al
0.9Ga
0.1The mode that As distributed Bragg grating forms resonant cavity increases collection efficiency, GaAs and Al
0.9Ga
0.1The thickness of As can be adjusted according to emission wavelength, and for example, emission wavelength is about 965nm, and the thickness of desirable GaAs is 68.57nm, Al
0.9Ga
0.1The thickness of As is 80.69nm, and the doping content of Si is 2 * 10
18/ cm
3
Step 106: reduce growth temperature, growth low-density quantum dot;
In this step, the growth rate of low-density quantum dot is 0.0005～0.02 μ m/h, and the dead time is 1～20s, and growth temperature is reduced for 500～560 degrees centigrade, and the V/III ratio is controlled in the 5-25 scope; The thickness of deposit amount is 1.8～2.1 monoatomic layers.
Step 107: growth InGaAs (Sb) cap rock;
In this step, be to adopt the method for InGaAs (sb) cap rock to expand wavelength, the thickness of InGaAs cap rock is 3～6nm.
Step 108: growth coupling quantum spot;
In this step, adopted the method for double-deck Coupling point to expand wavelength to 1.55 micron.When growth second layer Coupling point, adopted the regulation and control separator, annealing process.Separation layer thickness is 5-15nm; The separator annealing temperature is: 550-650 degree centigrade; The separator annealing time is 10-600s;
Step 109: grow doping GaAs ohmic contact layer;
In this step, the thickness of Doped GaAs ohmic contact layer is 30nm, and the doping content of Be is 5 * 10
18/ cm
3
Step 110: make upper/lower electrode, finish electricity and cause the single photon preparation of devices.
Embodiment
Present embodiment adopts Veeco GEN II type molecular beam epitaxial device to grow.
GaAs (100) substrate is placed in the sample holder, and introduces Sample Room and under 180～250 degrees centigrade temperature conditions, toast.
The substrate that baking finishes is introduced preparation room and carry out degassing processing under 400～450 degrees celsius, and the surge chamber atmospheric pressure reduces to 10
-8Show when Torr is following that degasification finishes.
Remove the substrate of gas and introduced the growth room, and substrate heater was heated up, under the situation that the As protection is arranged, carried out the deoxidation of sample.The deoxidation temperature scope: 580 to 620 degrees centigrade, deaeration time 5 minutes.
In deoxidation process, the atom of observing substrate surface by reflection high energy electron diffraction (RHEED) is the structure situation again, determines whether deoxidation.
Annealing is reduced to 580～620 degrees centigrade of growth temperatures with the substrate heater temperature after finishing, growth GaAs resilient coating 500nm, and growth rate is 1 μ m/h, and growth temperature is 580～620 degrees centigrade, and the V/III ratio is 20, and the Si doping content is 2 * 10
18/ cm
3
Emission wavelength in the present embodiment is elected 965nm as, and 20 couples of GaAs (68.57nm)/Al grows
0.9Ga
0.1As (80.69nm) distributed Bragg (DBR) speculum, the Si doping content is 2 * 10
18/ cm
3
Growth low-density quantum dot, growth rate is 0.001 μ m/h, dead time 10s, 545 degrees centigrade of growth temperatures, growth thickness 1.95 monoatomic layers.
Growth GaAs cap rock, thickness 226.2nm.
Grow doping GaAs layer, thickness 30nm, Be is doped to 5E18.
Do upper/lower electrode, prepare electricity and cause the single photon device.
According to the above-mentioned technology low-density InAs quantum dot light emitting device of successfully having grown, structure as shown in Figure 2, the AFM shape appearance figure is shown in Fig. 4 (c), low temperature PL spectrum as shown in Figure 6, reflectance spectrum as shown in Figure 7, photic and electricity causes the HBT test as shown in Figure 8, this figure shows that this device has succeeded in sending up single photon.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. the molecular beam epitaxy accretion method of a low-density InAs quantum dot is characterized in that, this method comprises:
The GaAs substrate is placed in the sample holder, and introduces Sample Room and toast;
After baking finishes, the GaAs substrate is introduced preparation room, and the GaAs substrate is carried out degassing processing;
To remove the GaAs substrate of gas and introduce the growth room, and the heater of GaAs substrate will be heated up, under the situation that the As protection is arranged, the GaAs substrate be carried out deoxidation;
The heter temperature of GaAs substrate is reduced to growth temperature, growth GaAs resilient coating, and doping Si;
It is many to the GaAs/AlGaAs distributed bragg reflector mirror to grow;
Reduce growth temperature, growth low-density quantum dot;
Growth InGaAs cap rock;
The growth Coupling point is expanded wavelength
Grow doping GaAs layer;
Make upper/lower electrode, finish electricity and cause the single photon preparation of devices.
2. the molecular beam epitaxy accretion method of low-density InAs quantum dot according to claim 1 is characterized in that, described introducing Sample Room toasts, and is to carry out under 180～250 degrees centigrade temperature conditions.
3. the molecular beam epitaxy accretion method of low-density InAs quantum dot according to claim 1 is characterized in that, described the GaAs substrate is carried out degassing processing, carries out under 400～450 degrees celsius, and atmospheric pressure reduces to 10 in preparation room
-8Show when Torr is following that degasification finishes.
4. the molecular beam epitaxy accretion method of low-density InAs quantum dot according to claim 1 is characterized in that, describedly the GaAs substrate is carried out deoxidation having under the situation of As protection, and the deoxidation temperature scope is 580 to 620 degrees centigrade, and deaeration time is 5 minutes.
5. the molecular beam epitaxy accretion method of low-density InAs quantum dot according to claim 4 is characterized in that, in deoxidation process, the atom of observing substrate surface by reflection high energy electron diffraction is the structure situation again, determines whether deoxidation.
6. the molecular beam epitaxy accretion method of low-density InAs quantum dot according to claim 1, it is characterized in that, described heter temperature with the GaAs substrate is reduced to growth temperature, growth GaAs resilient coating, and in the step of doping Si, growth temperature is 580～620 degrees centigrade, growth GaAs resilient coating 500nm, growth rate is 1 μ m/h, and the V/III ratio is controlled in 15～25 scopes, and the doping content of Si is 2 * 10
18/ cm
3
7. the molecular beam epitaxy accretion method of low-density InAs quantum dot according to claim 1 is characterized in that, in the many steps to the GaAs/AlGaAs distributed bragg reflector mirror of described growth, is to adopt at quantum dot active region upper and lower growth GaAs/Al
0.9Ga
0.1The mode that As distributed Bragg grating forms resonant cavity increases collection efficiency, GaAs and Al
0.9Ga
0.1The thickness of As can be adjusted according to emission wavelength, and for example, emission wavelength is about 965nm, and the thickness of desirable GaAs is 68.57nm, Al
0.9Ga
0.1The thickness of As is 80.69nm.The doping content of Si is 2 * 10
18/ cm
3
8. the molecular beam epitaxy accretion method of low-density InAs quantum dot according to claim 1, it is characterized in that, in the step of growth low-density quantum dot, the growth rate of low-density quantum dot is 0.0005～0.02 μ m/h, dead time is 1～20s, growth temperature is reduced for 500～560 degrees centigrade, and the V/III ratio is controlled in 5～25 scopes, and the thickness of InAs deposit amount is 1.8～2.1 monoatomic layers.
9. the molecular beam epitaxy accretion method of low-density InAs quantum dot according to claim 1 is characterized in that, adopts the method for InGaAs (Sb) cap rock to expand wavelength, the especially employing of Sb, and the thickness of InGaAs cap rock is 3～6nm.
10. the molecular beam epitaxy accretion method of low-density InAs quantum dot according to claim 1 is characterized in that, has adopted the method for double-deck Coupling point to expand wavelength to 1.55 micron.When growth second layer Coupling point, adopted regulation and control separator and annealing process, separation layer thickness is 5-15nm, the separator annealing temperature is: 550-650 degree centigrade, the separator annealing time is 10-600s.
11. the molecular beam epitaxy accretion method of low-density InAs quantum dot according to claim 1 is characterized in that, in the step of described grow doping GaAs P type ohmic contact layer, the thickness of Doped GaAs layer is 30nm, and the doping content of Be is 5 * 10
18/ cm
3
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| CN102427105A (en) * | 2011-11-09 | 2012-04-25 | 厦门乾照光电股份有限公司 | Light emitting diode having distributed Bragg reflector with modulation doping structure |
| CN102560634A (en) * | 2012-02-20 | 2012-07-11 | 华南理工大学 | Method for growing InGaAs film on GaAs substrate |
| CN103367570A (en) * | 2012-03-30 | 2013-10-23 | 清华大学 | White light led |
| CN103397376A (en) * | 2013-07-23 | 2013-11-20 | 中国科学院长春光学精密机械与物理研究所 | Method for growing InGaAs material with low dislocation density and high indium composition by adopting LP-MOCVD (Low Pressure Metal-Organic Chemical Vapor Deposition) system |
| CN105006426A (en) * | 2015-06-29 | 2015-10-28 | 华南理工大学 | InAs quantum dot grown on GaAs substrate and preparation method therefor |
| CN105428225A (en) * | 2014-09-10 | 2016-03-23 | 长春理工大学 | Method of controlling doping concentration of N-type GaAs film by optimizing category of As molecule |
| CN108264902A (en) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | A kind of bioprobe based on quanta point material, preparation method and application |
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| CN109402732A (en) * | 2017-08-17 | 2019-03-01 | 中国科学院物理研究所 | Molecular beam epitaxy system |
| CN110098563A (en) * | 2019-06-11 | 2019-08-06 | 中国科学院半导体研究所 | Entangled light source based on double cavity structure |
| CN112366509A (en) * | 2020-10-19 | 2021-02-12 | 西北大学 | DBR cavity mode calibration method based on single photon growth |
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| CN102427105A (en) * | 2011-11-09 | 2012-04-25 | 厦门乾照光电股份有限公司 | Light emitting diode having distributed Bragg reflector with modulation doping structure |
| CN102560634A (en) * | 2012-02-20 | 2012-07-11 | 华南理工大学 | Method for growing InGaAs film on GaAs substrate |
| CN103367570A (en) * | 2012-03-30 | 2013-10-23 | 清华大学 | White light led |
| CN103397376A (en) * | 2013-07-23 | 2013-11-20 | 中国科学院长春光学精密机械与物理研究所 | Method for growing InGaAs material with low dislocation density and high indium composition by adopting LP-MOCVD (Low Pressure Metal-Organic Chemical Vapor Deposition) system |
| CN105428225A (en) * | 2014-09-10 | 2016-03-23 | 长春理工大学 | Method of controlling doping concentration of N-type GaAs film by optimizing category of As molecule |
| CN105006426B (en) * | 2015-06-29 | 2018-06-22 | 华南理工大学 | The InAs quantum dots of growth on gaas substrates and preparation method thereof |
| CN105006426A (en) * | 2015-06-29 | 2015-10-28 | 华南理工大学 | InAs quantum dot grown on GaAs substrate and preparation method therefor |
| CN108264902A (en) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | A kind of bioprobe based on quanta point material, preparation method and application |
| CN109402732A (en) * | 2017-08-17 | 2019-03-01 | 中国科学院物理研究所 | Molecular beam epitaxy system |
| CN108832484A (en) * | 2018-05-08 | 2018-11-16 | 天津大学 | A method of enhancing association photon pair source performance |
| CN110098563A (en) * | 2019-06-11 | 2019-08-06 | 中国科学院半导体研究所 | Entangled light source based on double cavity structure |
| CN112366509A (en) * | 2020-10-19 | 2021-02-12 | 西北大学 | DBR cavity mode calibration method based on single photon growth |
| CN113540974A (en) * | 2021-07-20 | 2021-10-22 | 苏州大学 | Gain coupling distribution feedback type semiconductor laser and manufacturing method thereof |
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Application publication date: 20110427 |