CN105428225A - Method of controlling doping concentration of N-type GaAs film by optimizing category of As molecule - Google Patents
Method of controlling doping concentration of N-type GaAs film by optimizing category of As molecule Download PDFInfo
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- CN105428225A CN105428225A CN201410456773.0A CN201410456773A CN105428225A CN 105428225 A CN105428225 A CN 105428225A CN 201410456773 A CN201410456773 A CN 201410456773A CN 105428225 A CN105428225 A CN 105428225A
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Abstract
The invention relates to a method of controlling the doping concentration of an N-type GaAs film by optimizing the category of As molecules. As beams with different As2:As4 proportions are obtained through molecular beam epitaxy (MBE) by controlling the temperature of an arsenic source, adherence coefficients of V-group elements are adjusted, and occupation of a doped element Si in a Ga position is facilitated. Degassing and surface oxide layer removal processing are conducted on a GaAs substrate, an epitaxy mixes with a GaAs buffer layer at proper thickness in a non-doped manner, then the As source is heated to a required temperature, and an Si source is started to carry out epitaxial growth of an N-type Si-doped GaAs film. Crystal growth is controlled in atom horizontal situ through molecular beam epitaxy, and components and morphology of a surface are controlled accurately. The obtained N-type Si-doped GaAs film is low in self compensation, high in carrier density and small in crystal lattice defect. The thickness of the film can be accurately controlled by means of a reaction rate, and doping control over the film is achieved by adjusting As2:As4 proportions in the As beams, the temperature of a doped source and V/III beam ratios.
Description
Technical field
The present invention relates to a kind of method controlling N-type GaAs (GaAs) film doping concentration by optimizing arsenic (As) molecular classification, utilizing molecular beam epitaxy (MBE) technology to obtain different As by the temperature controlling arsenic source
2: As
4the As line of ratio, regulates the sticking coefficient of V group element, and promote mixing of doped source silicon (Si), grow high electric property, the N-type GaAs film of excellent homogeneity, belongs to technical field of semiconductor material preparation.
Background technology
GaAs is a kind of III-V important race's direct band gap compound semiconductor materials, have that electron mobility is high, energy gap large (1.43eV) and excellent photoelectric properties etc., be widely used in manufacturing microwave device, infrared electro device and solar cell.In GaAs microwave device and opto-electronic device, elements Si can obtain high doping content due to high sticking coefficient and low mobility, N-type doped chemical is used as widely in the MBE growth of III-V race's semiconducting compound, most of doping process is by regulating doped source temperature, and the concentration of the control Si such as growth temperature in GaAs reaches the requirement of classes of semiconductors device.
Molecular beam epitaxy (MBE) technology refers under UHV condition, the atom of thermal evaporation generation or molecular beam is ejected into deposition in the clean substrate with certain orientation, uniform temperature and generates the epitaxy technique of high-quality thin-film material or various desired structure.Arrive the atom of substrate surface or molecule and substrate positive energy exchange, and in substrate surface absorption, migration, nucleation, finally grow into thin-film material.Can prepare: Group III-V compound semiconductor, II-VI group compound semiconductor etc.The growth rate slow (0.1 ~ 1ML/s) of molecular beam epitaxy monocrystal thin films, growth temperature low (GaAs ~ 550 DEG C), the component of epitaxial loayer can be changed and carry out the doping of variable concentrations, the thickness of epitaxial loayer, the evenness of heterojunction boundary and dopant profiles can be controlled in atomic scale, developed at present and accurately can control the level that an atomic layer connects an atomic layer growth.
During the monocrystal thin films adulterated utilizing molecular beam epitaxy, mainly carry out controlled doping concentration by the temperature of growth temperature and doped source.If this method condition controls improperly easily make foreign atom move less than assigned address thus form interstitial impurity, form some rooms and produce higher self compensation degree and reduce effective carrier concentration, produce more crystal defect.Utilize Si to obtain the higher N-type GaAs film of doping content as doped source and need higher doped source temperature, in the GaAs film obtained, there is Si
gaand V
ga, Si
gaand V
gaself compensation degree will affect the doping content of film and the character of film.For photoelectric device, growing high-quality material is prerequisite, therefore, how to grow higher doping content, and lower self compensation degree is one of major issue needing to solve.As
2only with surface single Ga atom effect, and As
4then relate to the adjacent Ga interaction of atom pairs with surface, the different molecular classification in As source will produce the surface vacancy of variable concentrations.Use As
2obtain higher arsenic surface concentration and will be conducive to the GaAs doping film mixing the lower self compensation concentration of (position occupying Ga) acquisition of Si.Therefore, by regulating different As
2: As
4the As line of ratio can to obtain under identical growth temperature and doped source temperature conditions more high carrier concentration higher-quality Si doped N-type GaAs film as arsenic source.
Summary of the invention
For the problem proposed in background technology, the present invention utilizes molecular beam epitaxy (MBE) technology to obtain different As by the temperature controlling arsenic source
2: As
4the As line of ratio, regulates the sticking coefficient of V group element, promotes doped chemical Si mixing (that is occupying the position of Ga) as alms giver, the GaAs film that (~ 550 DEG C) extension N-type Si adulterates under suitable growth temperature.
Effect of the present invention is, under suitable growth temperature condition (~ 550 DEG C), obtains different As by the source oven temperature degree regulating and controlling arsenic source
2: As
4the As line of ratio, obtains higher As
2surface concentration, makes Si effectively can occupy the position of Ga as alms giver, reduces the Ga room in film, and then reduces self compensation degree.Obtain crystal defect less, higher carrier concentration, high electric property and there is the N-type Si Doped GaAs film of excellent homogeneity.
Embodiment
One of the present invention controls the method for N-type GaAs (GaAs) film doping concentration by optimizing arsenic (As) molecular classification, it comprises the following steps:
(1) first GaAs substrate processes 60 minutes at Sample Room 200 DEG C, the steam of preliminary removing substrate surface.
(2) 120 minutes are processed, further degasification at the GaAs substrate of preliminary treatment being sent to surge chamber 400 DEG C.
(3) the GaAs substrate in surge chamber process is sent to the growth room of ultra high vacuum, substrate surface is warming up to 580 DEG C under the protection of As molecular beam, utilizes reflection high energy electron diffraction instrument (RHEED) to monitor removing surface oxide layer.
(4) growth temperature is adjusted to ~ 550 DEG C, As source temperature is controlled at 700 ~ 900 DEG C, the undoped GaAs resilient coating of extension suitable thickness simultaneously, and by RHEED in-situ monitoring film growth situation.
(5) As source temperature is controlled obtain higher As at ~ 900 DEG C
2: As
4the As line of ratio, Si source temperature controls at 1230 DEG C, opens the epitaxial growth that Si doped N-type GaAs film is carried out in Si source simultaneously.
Claims (6)
1. control a method for N-type GaAs (GaAs) film doping concentration by optimizing arsenic (As) molecular classification, it comprises the following steps:
(1) first GaAs substrate processes 60 minutes under Sample Room 200 DEG C of conditions, the steam of preliminary removing substrate surface.
(2) send the GaAs substrate of preliminary treatment to surge chamber and under 400 DEG C of conditions, process 120 minutes, further degasification.
(3) after surge chamber is disposed, GaAs substrate is sent to the growth room of ultra high vacuum, substrate surface is warming up to 580 DEG C under the protection of As molecular beam, utilizes reflection high energy electron diffraction instrument (RHEED) to monitor removing surface oxide layer.
(4) growth temperature is warming up to ~ 550 DEG C, As source temperature is controlled at 700 ~ 900 DEG C, the undoped GaAs resilient coating of extension suitable thickness simultaneously, and by RHEED in-situ monitoring film growth situation.
As source temperature is controlled obtain higher As at ~ 900 DEG C
2: As
4the As line of ratio, Si source temperature controls at 1230 DEG C, opens the epitaxial growth that Si doped N-type GaAs film is carried out in Si source simultaneously.
2. according to claim 1, the present invention can prepare higher carrier concentration, low self compensation degree, the high-quality N-type Si Doped GaAs film of low crystal defect.
3. according to claim 1, the present invention regulates and controls growing film As molecular classification used by the temperature in control As source, obtains higher As
2: As
4the As line of ratio, promotes that doped chemical Si mixes (that is occupying the position of Ga) as alms giver, obtains and have lower self compensation degree than additive method, more the Si doped N-type GaAs film of high carrier concentration under identical growth conditions.
4. according to claim 1, the present invention utilizes molecular beam epitaxy technique first to grow the undoped GaAs resilient coating of one deck suitable thickness on gaas substrates, then grows Si doped N-type GaAs film.
5. according to claim 1, the present invention utilizes molecular beam epitaxy technique to pass through the concentration of control Ga source line and substrate surface Ga atom, and then controls reaction rate, grows the N-type GaAs film of precise thickness.
6. according to claim 1, the present invention utilizes molecular beam epitaxy technique at atomic level in-situ control crystal growth under lower growth temperature, accurately controls thin film composition under identical growth conditions, obtains Si doped N-type GaAs film than additive method more high-dopant concentration and more high-crystal quality.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410456773.0A CN105428225A (en) | 2014-09-10 | 2014-09-10 | Method of controlling doping concentration of N-type GaAs film by optimizing category of As molecule |
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| CN201410456773.0A CN105428225A (en) | 2014-09-10 | 2014-09-10 | Method of controlling doping concentration of N-type GaAs film by optimizing category of As molecule |
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| CN105428225A true CN105428225A (en) | 2016-03-23 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105931951A (en) * | 2016-06-13 | 2016-09-07 | 北京大学 | Method for introducing impurities into gallium arsenide material in room-temperature environment |
| CN106098543A (en) * | 2016-06-13 | 2016-11-09 | 北京大学 | A kind of method introducing solid impurity under room temperature environment in silicon materials |
| CN108183062A (en) * | 2017-11-29 | 2018-06-19 | 中国科学院兰州化学物理研究所 | A kind of method realized GaAsN epitaxial film silicon and efficiently adulterated |
| CN114341408A (en) * | 2019-07-09 | 2022-04-12 | 集成太阳能公司 | Method for controlled n-doping of III-V materials grown on (111) Si |
| CN116435418A (en) * | 2023-06-13 | 2023-07-14 | 南昌凯捷半导体科技有限公司 | 590nm reversed-polarity LED epitaxial wafer and preparation method thereof |
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| CN1536621A (en) * | 2003-04-11 | 2004-10-13 | 中国科学院物理研究所 | Method for preparaing Al epitaxial layer contained semiconductor material grown on GaAs substrate |
| CN100583397C (en) * | 2005-08-25 | 2010-01-20 | 中国科学院上海微系统与信息技术研究所 | Doping method for III-v aluminum contained compound composed by direct or indirect band-gap |
| CN102034909A (en) * | 2009-09-30 | 2011-04-27 | 中国科学院半导体研究所 | Method for epitaxial growth of molecular beam of low-density InAs quantum dots |
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2014
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1536621A (en) * | 2003-04-11 | 2004-10-13 | 中国科学院物理研究所 | Method for preparaing Al epitaxial layer contained semiconductor material grown on GaAs substrate |
| CN100583397C (en) * | 2005-08-25 | 2010-01-20 | 中国科学院上海微系统与信息技术研究所 | Doping method for III-v aluminum contained compound composed by direct or indirect band-gap |
| CN102034909A (en) * | 2009-09-30 | 2011-04-27 | 中国科学院半导体研究所 | Method for epitaxial growth of molecular beam of low-density InAs quantum dots |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105931951A (en) * | 2016-06-13 | 2016-09-07 | 北京大学 | Method for introducing impurities into gallium arsenide material in room-temperature environment |
| CN106098543A (en) * | 2016-06-13 | 2016-11-09 | 北京大学 | A kind of method introducing solid impurity under room temperature environment in silicon materials |
| CN108183062A (en) * | 2017-11-29 | 2018-06-19 | 中国科学院兰州化学物理研究所 | A kind of method realized GaAsN epitaxial film silicon and efficiently adulterated |
| CN114341408A (en) * | 2019-07-09 | 2022-04-12 | 集成太阳能公司 | Method for controlled n-doping of III-V materials grown on (111) Si |
| CN116435418A (en) * | 2023-06-13 | 2023-07-14 | 南昌凯捷半导体科技有限公司 | 590nm reversed-polarity LED epitaxial wafer and preparation method thereof |
| CN116435418B (en) * | 2023-06-13 | 2023-08-25 | 南昌凯捷半导体科技有限公司 | 590nm reversed-polarity LED epitaxial wafer and preparation method thereof |
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Application publication date: 20160323 |