CN206116416U - Growth is n on gaAs substrate inGaAs film - Google Patents
Growth is n on gaAs substrate inGaAs film Download PDFInfo
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- CN206116416U CN206116416U CN201621186039.8U CN201621186039U CN206116416U CN 206116416 U CN206116416 U CN 206116416U CN 201621186039 U CN201621186039 U CN 201621186039U CN 206116416 U CN206116416 U CN 206116416U
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Abstract
The utility model discloses a growth is n on gaAs substrate inGaAs film is by a lower supreme gaAs substrate and the n delta doped region of including in proper order, the delta doped region is supreme including inGaAs intrinsic film and delta doping inGaAs film by down, the inGaAs film that delta doping inGaAs film adulterateed for si, N >= 1. The utility model discloses a N the si doping agent of inGaAs film presents the pulsed and distributes in the film, restrain effectively si from compensation effect, improve doping efficiency, electron mobility and crystal quality.
Description
Technical field
The utility model is related to InGaAs films, more particularly to grows n-InGaAs films on gaas substrates.
Background technology
Due to InxGa1-xAs materials have the advantages that energy gap continuously adjustabe, carrier mobility are high, are very good
Multijunction solar cell material.At present, researcher successfully prepares on gaas substrates InGaP/GaAs/
The three-joint solar cell of InGaAs structures, but for the doping of InGaAs bottoms battery still has many problems to need to solve.Often
N-type dopant Sn is due to producing fractional condensation on surface phenomenon, and the Impurity Distribution for obtaining mutation is very difficult.It is also a kind of optional
Dopant be Ge.But Ge is double property dopants strongly, because in the case where Ge is introduced only by change lining
Bottom temperature and V/III ratios can just grow the GaAs films of opposite polarity.Afterwards, scientific research personnel has found another kind IV races element
Si can overcome most of short slab of above-mentioned dopant：Si has conforming sticking coefficient without producing fractional condensation on surface, it is easy to
Obtain the Impurity Distribution of mutation；Change of the Si dopants to growth conditions is insensitive, and doping process requires relatively low.For high electronics
For the GaAs based semiconductor devices such as mobility transistor, need carrier concentration it is high (>1019cm-3) doped layer come
Realize the function of device.But, when Si heavy doping carrier concentration reaches 1018cm-3During the order of magnitude, can produce very serious
Self-compensation mechanism, so as to cause carrier concentration further to improve, and carrier mobility speed declines.Heavy doping can also make
Into the drastically decline of crystal mass, so as to cause ill effect to device performance.
Traditional In0.3Ga0.7For As film doping techniques, generally by adjustment V/III ratios, doping source temperature, life
The condition such as long speed and epitaxial temperature to control growth course in parameter.Or before epitaxial growth first to substrate at
Reason, such as one layer of impurity layer of pre-doping.And for the film delayed outward, it is also an option that annealed, foreign ion activation etc.
Means are further processed.
Utility model content
In order to overcome the disadvantages mentioned above and deficiency of prior art, the purpose of this utility model is to provide one kind to be grown in
N-InGaAs films on GaAs substrates, Si dopants are presented in the film pulsed distribution, effectively suppress the self compensation effect of Si
Should, improve doping efficiency, electron mobility and crystal mass.
The purpose of this utility model is achieved through the following technical solutions：
N-InGaAs films on gaas substrates are grown, includes GaAs substrates and n δ doped region successively from the bottom to top；Institute
Stating δ doped regions includes from the bottom to top the intrinsic films of InGaAs and δ doping InGaAs films；δ adulterates InGaAs films for Si doping
InGaAs films；N >=1.
The InGaAs films of described Si doping, doping content is 4.0 × 1011～6 × 1012cm-2。
The thickness of the intrinsic film of the InGaAs is 1～10nm.
The thickness of the δ doping InGaAs films is 0.1～0.3nm.
The preparation method of n-InGaAs films on gaas substrates is grown, is comprised the following steps：
(1) GaAs substrates cleaning；
(2) the pre- degassing processing of GaAs substrates；
(3) GaAs substrates deoxygenated film；
(4) growth of the intrinsic films of InGaAs：GaAs underlayer temperatures are 500～580 DEG C, are 4.0 in reative cell vacuum
×10-5～2.7 × 10-8Under the conditions of Pa, III, group V source is kept to open, In source temperatures are in 700～830 DEG C, Ga source temperatures 900
～1050 DEG C, As source temperatures 250～310 DEG C, growth rate be 0.6～1ML/s under the conditions of, growth thickness is 1～10nm's
The intrinsic films of InGaAs；
(5) δ doping InGaAs films：GaAs underlayer temperatures are 500～580 DEG C, are 4.0 × 10 in reative cell vacuum-5
～2.7 × 10-8Under the conditions of Pa, close the source stove of In and Ga, As source temperatures be 250～310 DEG C, Si source temperatures be 1000～
Under conditions of 1250 DEG C, the growth rate growth thickness with 0.01～0.05ML/s is the δ doping InGaAs layers of 0.1～0.3nm.
The described preparation method for growing n-InGaAs films on gaas substrates, it is further comprising the steps of：
(6) repeat step (4)～(5) are multiple.
Step (1) the GaAs substrates cleaning, specially：
Wash through acetone, deionized water, remove substrate surface organic matter；GaAs substrates are placed in into H2O2:H2O:H2SO4=
1:1:In 5 solution ultrasound 1～10 minute, after Jing deionized waters cleaning remove oxide on surface；GaAs substrates after cleaning are used
High pure nitrogen is dried up.
The pre- degassing processing of step (2) the GaAs substrates, specially：
GaAs substrates send into the pre- degasification of molecular beam epitaxy Sample Room 15～30 minutes；It is re-fed into 300～400 DEG C of transfer chamber to remove
Gas 0.5～2 hour, completes to send into growth room after degasification.
Step (3) the GaAs substrates deoxygenated film, specially：
GaAs substrates are entered behind growth room, and underlayer temperature is risen to into 550～650 DEG C, and high-temperature baking 15～30 minutes is removed
The oxidation film layer of substrate surface.
Compared with prior art, the utility model has advantages below and beneficial effect：
(1) of the present utility model to grow n-InGaAs films on gaas substrates, Si dopants are presented in the film pulse
Formula is distributed, and effectively suppresses the self-compensation mechanism of Si, improves doping efficiency, electron mobility and crystal mass.
(2) it is of the present utility model to grow n-InGaAs films on gaas substrates, can effectively reduce n-InGaAs growths
During the stress that is subject to, suppress the formation of misfit dislocation, improve the crystal mass of GaAs epitaxial films.
Description of the drawings
Fig. 1 is the structural representation of the n-InGaAs films of embodiment of the present utility model 1.
Specific embodiment
With reference to embodiment, the utility model is described in further detail, but embodiment of the present utility model
Not limited to this.
Embodiment 1
The preparation method for growing n-InGaAs films on gaas substrates of the present embodiment, comprises the following steps：
(1) GaAs substrates cleaning：
Wash through acetone, deionized water, remove substrate surface organic matter；GaAs substrates are placed in into H2O2:H2O:H2SO4=
1:1:In 5 solution ultrasound 1 minute, after Jing deionized waters cleaning remove oxide on surface；GaAs substrates after cleaning are with high-purity
Nitrogen is dried up.
(2) the pre- degassing processing of GaAs substrates：
The pre- degassing processing of step (2) the GaAs substrates, specially：
GaAs substrates send into the pre- degasification of molecular beam epitaxy Sample Room 15 minutes；It is re-fed into the degasification 0.5 of 300 DEG C of transfer chamber little
When, complete to send into growth room after degasification.
(3) GaAs substrates deoxygenated film：
GaAs substrates are entered behind growth room, and underlayer temperature is risen to into 550 DEG C, and high-temperature baking 15 minutes removes substrate surface
Oxidation film layer.
(4) growth of the intrinsic films of InGaAs：GaAs underlayer temperatures are 500 DEG C, are 4.0 × 10 in reative cell vacuum- 5Under the conditions of Pa, keep III, group V source open, In source temperatures 700 DEG C, Ga source temperatures 900 DEG C, As source temperatures 250 DEG C,
Growth rate is that under the conditions of 0.6ML/s, growth thickness is the intrinsic films of InGaAs of 1nm；
(5) δ doping InGaAs films：GaAs underlayer temperatures are 500 DEG C, are 4.0 × 10 in reative cell vacuum-5Pa conditions
Under, close the source stove of In and Ga, As source temperatures be 250 DEG C, Si source temperatures be under conditions of 1000 DEG C, with the life of 0.01ML/s
Long growth rate thickness is the δ doping InGaAs layers of 0.1nm；The InGaAs film doping concentration of described Si doping reaches 4.0
×1011cm-2。
(6) repeat step (4)～(5) are multiple.
The n-InGaAs thin-film materials of the present embodiment can be made using molecular beam epitaxy or metal organic chemical vapor deposition method
.
As shown in figure 1, the growth for preparing of the present embodiment on gaas substrates n-InGaAs films 14 from the bottom to top according to
It is secondary including GaAs substrates 11 and n δ doped region；The δ doped regions include that from the bottom to top the intrinsic films 12 of InGaAs and δ adulterate
InGaAs films 13；δ doping InGaAs films are the InGaAs films of Si doping；N >=1.
The n-InGaAs epitaxial films of the present embodiment, compared to the n-InGaAs obtained with conventional method, crystal mass is high,
A width of 1886 second of arc of half-peak of its (111) face X-ray rocking curve.And n-InGaAs surfaces are very smooth, square surface is thick
Rugosity is 3.1nm.The electron mobility of film reaches 650cm2/Vs。
Embodiment 2
The preparation method for growing n-InGaAs films on gaas substrates of the present embodiment, comprises the following steps：
(1) GaAs substrates cleaning：
Wash through acetone, deionized water, remove substrate surface organic matter；GaAs substrates are placed in into H2O2:H2O:H2SO4=
1:1:In 5 solution ultrasound 10 minutes, after Jing deionized waters cleaning remove oxide on surface；GaAs substrates after cleaning are with high-purity
Nitrogen is dried up.
(2) the pre- degassing processing of GaAs substrates：
The pre- degassing processing of step (2) the GaAs substrates, specially：
GaAs substrates send into the pre- degasification of molecular beam epitaxy Sample Room 30 minutes；400 DEG C of transfer chamber degasification 2 hours is re-fed into,
Complete to send into growth room after degasification.
(3) GaAs substrates deoxygenated film：
GaAs substrates are entered behind growth room, and underlayer temperature is risen to into 650 DEG C, and high-temperature baking 30 minutes removes substrate surface
Oxidation film layer.
(4) growth of the intrinsic films of InGaAs：GaAs underlayer temperatures are 580 DEG C, are 2.7 × 10 in reative cell vacuum- 8Under the conditions of Pa, keep III, group V source open, In source temperatures 830 DEG C, Ga source temperatures 1050 DEG C, As source temperatures 310 DEG C,
Growth rate is that under the conditions of 1ML/s, growth thickness is the intrinsic films of InGaAs of 10nm；
(5) δ doping InGaAs films：GaAs underlayer temperatures are 500～580 DEG C, are 2.7 × 10 in reative cell vacuum- 8Under the conditions of Pa, close the source stove of In and Ga, As source temperatures be 310 DEG C, Si source temperatures be under conditions of 1250 DEG C, with
The growth thickness of 0.05ML/s is the δ doping InGaAs layers of 0.3nm；The InGaAs film dopings of described Si doping
Concentration reaches 6 × 1012cm-2。
(6) repeat step (4)～(5) are multiple.
The test result of the n-InGaAs films that the present embodiment is prepared is similar to Example 1, will not be described here.
Above-described embodiment is the utility model preferably embodiment, but embodiment of the present utility model is not by described
The restriction of embodiment, it is other it is any without departing from the change made under Spirit Essence of the present utility model and principle, modify, replace
Generation, combination, simplification, should be equivalent substitute mode, be included within protection domain of the present utility model.
Claims (4)
1. n-InGaAs films on gaas substrates are grown, it is characterised in that include GaAs substrates and n δ successively from the bottom to top
Doped region；The δ doped regions include from the bottom to top the intrinsic films of InGaAs and δ doping InGaAs films；δ doping InGaAs films
For the InGaAs films of Si doping；N >=1.
2. it is according to claim 1 to grow n-InGaAs films on gaas substrates, it is characterised in that described Si doping
InGaAs films, doping content be 4.0 × 1011～6 × 1012cm-2。
3. it is according to claim 1 to grow n-InGaAs films on gaas substrates, it is characterised in that the InGaAs sheets
The thickness for levying film is 1～10nm.
4. it is according to claim 1 to grow n-InGaAs films on gaas substrates, it is characterised in that the δ doping
The thickness of InGaAs films is 0.1～0.3nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201621186039.8U CN206116416U (en) | 2016-10-28 | 2016-10-28 | Growth is n on gaAs substrate inGaAs film |
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| CN201621186039.8U CN206116416U (en) | 2016-10-28 | 2016-10-28 | Growth is n on gaAs substrate inGaAs film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493284A (en) * | 2018-05-03 | 2018-09-04 | 扬州乾照光电有限公司 | A kind of multijunction solar cell of lattice mismatch and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493284A (en) * | 2018-05-03 | 2018-09-04 | 扬州乾照光电有限公司 | A kind of multijunction solar cell of lattice mismatch and preparation method thereof |
| CN108493284B (en) * | 2018-05-03 | 2020-03-10 | 扬州乾照光电有限公司 | Lattice mismatched multi-junction solar cell and manufacturing method thereof |
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