CN108039321A - Using SiC as substrate GaN-based HEMT device epitaxial growth method - Google Patents
Using SiC as substrate GaN-based HEMT device epitaxial growth method Download PDFInfo
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- 230000012010 growth Effects 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 21
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 66
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 36
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 30
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 19
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910017083 AlN Inorganic materials 0.000 claims abstract description 13
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 9
- 238000000407 epitaxy Methods 0.000 claims abstract description 8
- 230000003139 buffering effect Effects 0.000 claims abstract description 7
- 239000002131 composite material Substances 0.000 claims abstract description 7
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 5
- 230000000737 periodic effect Effects 0.000 claims abstract description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 10
- 229910021529 ammonia Inorganic materials 0.000 claims description 9
- 229910003465 moissanite Inorganic materials 0.000 claims description 7
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 7
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- GJEZUWLUOLSPJE-UHFFFAOYSA-N C[Ti](C)C Chemical compound C[Ti](C)C GJEZUWLUOLSPJE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 8
- 230000008901 benefit Effects 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 18
- 239000013078 crystal Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000003578 releasing effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
One kind belongs to technical field of semiconductor device preparation using SiC as substrate GaN-based HEMT device epitaxial growth method.Titanium nitride layer, aluminium nitride and gallium nitride layer are deposited on substrate successively using electrochemical vapour deposition (EVD) method, form compound buffer layer；Composite buffering layer surface is using the one or more in sense coupling technology etched hole shape, cylindricality, bar pattern, in periodic arrangement；Then undoped GaN epitaxy growth and undoped AlGaN epitaxial growths are carried out using MOCVD；The GaN of last epitaxial growth Si doping emits layer.Advantage is, improves silicon carbide-based gallium nitride material lattice mismatch issue, lifting device overall performance and yields is acted on obvious.
Description
Technical field
The invention belongs to technical field of semiconductor device preparation, and more particularly to one kind is using SiC as substrate GaN-based HEMT device
Epitaxial growth method.
Background technology
Gallium nitride power device is due to the gallium nitride material advanced feature of itself, relative to silicon leading currently on the market
Semiconductor power device, under same operating voltage and power condition, can further reduce big in conversion process of energy
The energy loss of about 30%-50%, while its volume smaller (1/10), operating voltage higher (＞ 600V), conversion power is more
(＞ kW) greatly, and working frequency is faster (＞ 50MHz).All these advantages are reducing production cost by being commercialized, all
Huge economic benefit can be converted into, major contribution is made for the world is energy-saving.
The core of whole gallium nitride power device technology is the gallium nitride material for how producing high quality.Because nitridation
Fusing point of gallium material itself is high, so being difficult to adopt the crystallization technique (such as silicon) of melting.Current state-of-the-art crystallization technique is also only
2 cun of pieces can be produced, cost is extremely expensive, can not realize large-scale production, so not possessing industrialization economic benefit demand.It is existing
In the industry cycle develop the technology of preparing of comparative maturity and be provided simultaneously with commercial viability is metal-organic chemical vapor deposition equipment
(MOCVD) epitaxy technology.Simultaneously as the characteristic of gallium nitride material lattice, nature also lacks one can be with gallium nitride crystal lattice
Match substrate material that is similar and manufacturing advantage of lower cost.The substrate that present industry generally uses is carborundum, sapphire,
And monocrystalline silicon.With the progress of recent domestic SiC single crystal material preparation technology, the price of SiC single crystal substrate gradually drops
Low, this creates condition to prepare the production cost of gallium nitride epitaxial materials in reduction SiC substrates.But SiC substrates and GaN material
In lattice constant and thermal coefficient of expansion all there are larger difference, both sides problem thus can be run into：(1) lattice mismatch issue：
Because of the lattice constant (a=0.3189nm, c=0.5185nm) of GaN and lattice constant (a=0.3073nm, the c=of 6H-SiC
1.0053nm) different, 3.77% lattice mismatch causes that very big lattice can be produced initial stage in GaN epitaxial layer epitaxial growth
Mismatch stress, when the thickness of the GaN epitaxial layer of growth exceedes a certain critical thickness, (several nm to hundreds of nm are thick, specific to regard what is introduced
Depending on the situation of intermediate layer) after, this Macrolattice mismatch stress accumulated in GaN epitaxial layer will be with interface generation dislocation
Discharged with the form of defect, this is by the deterioration for causing GaN epitaxial layer crystalline quality and then reduces the performance of subsequent device structure；
(2) thermal mismatch problem：Because of the thermal coefficient of expansion (a of GaN：5.59×10-6K) and 6H-SiC thermal coefficient of expansion (a：3.54×10-6K) there is also larger difference, this causes GaN epitaxial layer or LED device structure from very high growth temperature (such as 800~1100 DEG C)
Can gather very big thermal stress during dropping to room temperature, this thermal stress be a kind of tensile stress for GaN epitaxial layer into
And easily cause GaN epitaxial layer material and produce cracking or bending.Using the larger hot tensile stress of accumulation and have outside crackle or curved GaN
Prolong layer material and prepare device, the raising of device performance and yields certainly will be influenced.Made in transfer at present and coordination release SiC substrates
The common method of the mismatch stress of standby GaN epitaxial layer material has：Stress covariant layer (including cushion, flexible layer, insert layer
Deng) and graph substrate.Existing stress covariant layer, such as GaN cushions, AlN cushions, AlGaN component-gradient buffer layers, thin
InAlGaN flexible layers etc., although having better effects in terms of shifting and coordinating release lattice mismatch stress, are shifting and are assisting
Effect is limited in terms of adjusting release thermal mismatch stress.
The content of the invention
It is an object of the invention to provide one kind using SiC as substrate GaN-based HEMT device epitaxial growth method, solve existing
The problem of growing GaN lattice mismatches and thermal mismatching on sic substrates with the presence of technical method.
It is a kind of as follows as substrate GaN-based HEMT device epitaxial growth method, specific steps and parameter using SiC：
1st, the growth of material, substrate 6H- are carried out using metal organic chemical vapor deposition (MOCVD) epitaxial growth system
SiC or SiC substrate, growth atmosphere are with trimethyl gallium (TMGa), trimethyl aluminium (TMAl), trimethyl titanium (TDEAT) and ammonia
(NH3) respectively as Ga, Al, Ti and N source, with hydrogen (H2) it is carrier gas.
2nd, growing mixed cushion, compound buffer layer are successively by titanium nitride layer, nitridation using MOCVD methods on substrate
Aluminium and gallium nitride layer are deposited on substrate, first, before silicon carbide substrates are placed in 1200-1500 DEG C of reative cell 200-400s progress
Dry, be cooled to 500-600 DEG C, be passed through ammonia 8000-10000sccm and substrate is nitrogenized；TDEAT gases are then passed to, are flowed
Amount is controlled in 40-60sccm, is passed through ammonia 8000-10000sccm, duration 80-100s, carries out titanium nitride deposition, 250-350s
Restored；50-90sccm TMAl gases are then passed to, 10000-20000sccm ammonias, duration 100-150s, is nitrogenized
Al deposition；80-120sccm TMGa gases are finally passed through, 15000-24000sccm ammonias, duration 150-200s, is nitrogenized
Gallium deposits, and reative cell atmosphere is restored, and completes compound buffer layer growth.
3rd, composite buffering layer surface utilizes inductively coupled plasma (ICP) lithographic technique etched hole shape, cylindricality, bar chart
One or more in shape, and be in periodic arrangement, figure is made of window area and mesa region, graphics depth 40-
100nm, less than composite buffering layer thickness.
4th, at 1000-1010 DEG C, carrying out undoped GaN epitaxy using MOCVD and grow, thickness is 2-2.5 μm,
At 800-820 DEG C, undoped AlGaN epitaxial growths, thickness 2-3nm are carried out.
5th, to realize in channel layer raising 2DEG (two-dimensional electron gas) concentration, carry out Si doping, employ it is highly doped with it is low
Adulterate the AlxGa1-xN layers mixed and form hetero-junctions, doping concentration 10 with undoped GaN layer17To 1019cm-3Scope,
Wherein：Highly doped Al components accounting is 20-30wt%, and low-doped Al components accounting is 0-10wt%.
6th, the GaN of epitaxial growth Si doping emits layer 1018-1019cm-3。
Compound buffer layer in invention compares existing stress covariant layer technology (including cushion, flexible layer, insert layer etc.)
With more preferable stress transfer and coordinate releasing effect.In terms of being embodied in following three：
Titanium nitride (TiN) layer is selected, it has more preferable Lattice Matching relation and heat with carborundum (SiC) and aluminium nitride (AlN)
The coefficient of expansion is very big, transfer that can be as lattice mismatch stress and thermal stress and coordination releasing layer；AlN is selected, its is semi-insulating
Property, can improve compound buffer layer prevents electric leakage ability.Low-temperature gan layer is selected, it is good with GaN wellabilities, is conducive to GaN nucleation
Growth.
The a shaft lattice constants of A1N materials are between GaN and SiC, and lattice mismatch is about 2% between GaN；It is vertical
The lattice mismatch in square TiN (111) faces and 6H-SiC (002) face is 2.22%, the lattice mismatch with six-port technology (0002) face
For 3.45%.Based on compliant substrate can covariant intermediate layer stress transfer thought, during AlN layer epitaxially growns, TiN
Layer will be subject to SiC substrates and the thin AlN layers of tensile stress for being applied to it, and since TiN is very thin, this lattice mismatch stress can be first transferred to
Coordinate release in TiN layer；And in GaN epitaxy growth course, the lattice mismatch stress between SiC substrates and GaN material just will
Be transferred to TiN layer, AlN layers and compound buffer layer that low-temperature gan layer is composed in coordinate release.Outside low-temperature gan layer growth GaN
Prolong layer category isoepitaxial growth, wellability is good, and GaN epitaxy thickness is uniform.TiN, AlN that the present invention uses replace with GaN layer
Stacked structure, the more multiple solutions of introducing play the role of preventing following threading dislocation from breeding extension upwards again, so as to further drop
Low-dislocation-density.
The thermal coefficient of expansion of TiN is 9.35 × 10-6K, the thermal coefficient of expansion (a compared to GaN：5.59×10-6K), AlN
Thermal coefficient of expansion (a：4.15×10-6K) and SiC thermal coefficient of expansion (a：3.54×10-6K it is) all much larger, along with TiN layer
Compared to AlN layers and GaN layer and SiC single crystal substrate all much thinners, based on compliant substrate can covariant intermediate layer stress transfer
Thought, drops to because thermal expansion coefficient difference produces the thermal stress of accumulation in room temperature process from 800~1100 DEG C of growth temperatures, can
The coordination release in the form of tensile stress is first transferred in each TiN layer by regulating and controlling rate of temperature fall, and then realizes GaN layer and AlN layers
Unstressed, crackle and bending.
Etching is patterned to compound buffer layer, etches figure on compound buffer layer, figure by window area and
Mesa region forms.During epitaxial growth, gas atom reacts nucleation, the part i.e. window area being etched on substrate on table top
Since the migration of atom needs the regular hour, so being not easy to be nucleated.Film layer is grown along vertical table-board direction, in longitudinal growth
Meanwhile also carry out cross growth.With the growth of thick film, the cross growth region of adjacent table top can reach merging, work as transverse direction
Growth, which reaches a certain level rear epitaxial layer of gallium nitride, just can cover whole buffer-layer surface.Graph substrate technology utilizes longitudinal growth
With the merging of cross growth, it can reduce or suppress extension of the dislocation in epitaxial layer of gallium nitride, so as to improve epitaxial layer of gallium nitride
Crystal quality.
The channel layer of special construction design.To realize 2DEG concentration high in channel layer, employ it is highly doped with it is low-doped
The Al mixedxGa1-xN layers form hetero-junctions, doping concentration 10 with undoped GaN layer17To 1019cm-3In the range of, wherein
Have the function that to increase channel layer breakdown electric field and grid Schottky barrier to control Al constituent contents, and in being made on channel layer
For the GaN layer of Si doping, to reduce ohmic contact resistance rate.
It is an advantage of the current invention that using special device structure design, silicon carbide-based gallium nitride material is not only improved
Lattice mismatch issue, and lifting device overall performance and yields are acted on obvious.Silicon carbide substrate can be increased substantially
The performance and yields of the gallium nitride epitaxial materials of upper preparation, basis is done for the preparation of silicon carbide-based gallium nitride device, and being adapted to should
With with marketing.
Embodiment
Embodiment 1
It is a kind of as follows as substrate GaN-based HEMT device epitaxial growth method, specific steps and parameter using SiC：
1st, the growth of material, substrate 6H- are carried out using metal organic chemical vapor deposition (MOCVD) epitaxial growth system
SiC or SiC substrate, growth atmosphere are with trimethyl gallium (TMGa), trimethyl aluminium (TMAl), trimethyl titanium (TDEAT) and ammonia
(NH3) respectively as Ga, Al, Ti and N source, with hydrogen (H2) it is carrier gas.
2nd, growing mixed cushion, compound buffer layer are successively by titanium nitride layer, nitridation using MOCVD methods on substrate
Aluminium and gallium nitride layer are deposited on substrate, and first, silicon carbide substrates are placed in 1200 DEG C of reative cell 300s and carry out front baking, are cooled to
500 DEG C, it is passed through ammonia 8000sccm and substrate is nitrogenized；Then, TDEAT gases are passed through, flow control is passed through in 40sccm
Ammonia 8000sccm, duration 80s, carry out titanium nitride deposition, and 250s is restored；50sccm TMAl gases are then passed to,
10000sccm ammonias, duration 100s, carries out nitridation al deposition；Finally it is passed through 80sccm TMGa gases, 15000sccm ammonias,
Duration 150s, carries out gallium nitride deposition, reative cell atmosphere is restored, and completes compound buffer layer growth.
3rd, composite buffering layer surface utilizes inductively coupled plasma (ICP) lithographic technique etched hole shape, cylindricality, bar chart
One or more in shape, and be in periodic arrangement, figure is made of window area and mesa region, graphics depth 40nm,
Less than composite buffering layer thickness.
4th, at 1010 DEG C, carrying out undoped GaN epitaxy using MOCVD and grow, thickness is 2 μm, at 820 DEG C, into
The undoped AlGaN epitaxial growths of row, thickness 2nm.
5th, to realize in channel layer raising 2DEG (two-dimensional electron gas) concentration, carry out Si doping, employ it is highly doped with it is low
Adulterate the AlxGa1-xN layers mixed and form hetero-junctions, doping concentration 10 with undoped GaN layer17cm-3Scope, wherein：
Highly doped Al components accounting is 20wt%, and low-doped Al components accounting is 1wt%.
6th, the GaN of epitaxial growth Si doping emits layer 1018cm-3。
Claims (1)
1. one kind is using SiC as substrate GaN-based HEMT device epitaxial growth method, it is characterised in that specific steps and parameter are as follows：
1) carry out the growth of material using metal organic chemical vapor deposition MOCVD epitaxy growing system, substrate for 6H-SiC or
SiC substrate, growth atmosphere are with trimethyl gallium TMGa, trimethyl aluminium TMAl, trimethyl titanium TDEAT and ammonia NH3Respectively as
Ga, Al, Ti and N source, with hydrogen H2For carrier gas；
2) growing mixed cushion on substrate, is successively deposited titanium nitride layer, aluminium nitride and gallium nitride layer using MOCVD methods
On substrate, silicon carbide substrates are placed in 1200-1500 DEG C of reative cell 200-400s and carry out front baking, be cooled to 500-600 DEG C, led to
Enter ammonia 8000-10000sccm to nitrogenize substrate；Then pass to TDEAT gases, flow control is passed through in 40-60sccm
Ammonia 8000-10000sccm, duration 80-100s, carry out titanium nitride deposition, and 250-350s is restored；Then pass to 50-
90sccm TMAl gases, 10000-20000sccm ammonias, duration 100-150s, carries out nitridation al deposition；Finally it is passed through 80-
120sccm TMGa gases, 15000-24000sccm ammonias, duration 150-200s, carries out gallium nitride deposition, to reative cell atmosphere
Restored, complete compound buffer layer growth；
3) composite buffering layer surface is using in inductively coupled plasma ICP lithographic technique etched holes shape, cylindricality, bar pattern
One or more, and be in periodic arrangement, figure is made of window area and mesa region, graphics depth 40-100nm, small
In composite buffering layer thickness；
4) at 1000-1010 DEG C, carry out undoped GaN epitaxy using MOCVD and grow, thickness is 2-2.5 μm, in 800-
At 820 DEG C, undoped AlGaN epitaxial growths, thickness 2-3nm are carried out；
5) to realize raising 2DEG two-dimensional electron gas in channel layer, Si doping is carried out, is mixed using highly doped with low-mix dephasign
The AlxGa1-xN layers of conjunction form hetero-junctions, doping concentration 10 with undoped GaN layer17To 1019cm-3Scope, wherein：It is highly doped
Miscellaneous Al components accounting is 20-30wt%, and low-doped Al components accounting is 0-10wt%；
6) GaN of epitaxial growth Si doping emits layer 1018-1019cm-3。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493111A (en) * | 2018-06-01 | 2018-09-04 | 苏州汉骅半导体有限公司 | Method, semi-conductor device manufacturing method |
| CN112071963A (en) * | 2020-08-10 | 2020-12-11 | 福建兆元光电有限公司 | LED epitaxial wafer and manufacturing method |
| CN113981532A (en) * | 2021-08-30 | 2022-01-28 | 华灿光电（浙江）有限公司 | Substrate for epitaxial growth of silicon carbide and method for manufacturing substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108493111A (en) * | 2018-06-01 | 2018-09-04 | 苏州汉骅半导体有限公司 | Method, semi-conductor device manufacturing method |
| CN112071963A (en) * | 2020-08-10 | 2020-12-11 | 福建兆元光电有限公司 | LED epitaxial wafer and manufacturing method |
| CN113981532A (en) * | 2021-08-30 | 2022-01-28 | 华灿光电（浙江）有限公司 | Substrate for epitaxial growth of silicon carbide and method for manufacturing substrate |
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