CN103397376A - Method for growing InGaAs material with low dislocation density and high indium composition by adopting LP-MOCVD (Low Pressure Metal-Organic Chemical Vapor Deposition) system - Google Patents
Method for growing InGaAs material with low dislocation density and high indium composition by adopting LP-MOCVD (Low Pressure Metal-Organic Chemical Vapor Deposition) system Download PDFInfo
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- CN103397376A CN103397376A CN201310309499XA CN201310309499A CN103397376A CN 103397376 A CN103397376 A CN 103397376A CN 201310309499X A CN201310309499X A CN 201310309499XA CN 201310309499 A CN201310309499 A CN 201310309499A CN 103397376 A CN103397376 A CN 103397376A
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Abstract
The invention relates to a method for growing an InGaAs material with low dislocation density and high indium composition by adopting an LP-MOCVD (Low Pressure Metal-Organic Chemical Vapor Deposition) system, aiming solving the technical problem that the absorption layer grown by adopting the existing gradual composition transition method is large in dislocation density to cause the property reduction of a detector. The method for growing the InGaAs material comprises the steps of: firstly growing a first low-temperature buffer layer on a substrate at low temperature of 400DEG C to 450DEG C, wherein the first low-temperature buffer layer is 10-20nm thick and has the same quality as that of the substrate; then maintaining the temperature unchanged and growing an InxGa<1-x>As (x is more than or equal to 0.53) second low-temperature buffer layer which is 30-120nm thick; finally, increasing the temperature to 600DEG C-650DEG C, and growing an InxGa<1-x>As (x is more than or equal to 0.53) second high-temperature buffer layer. With the method, the X-ray rocking curve Full Width At Half Maximum (FWHM) of the InxGa<1-x>As absorption layer can be greatly reduced, so that the dislocation density of the absorption layer can be effectively reduced, and the growth quality of the epitaxial material of the absorption layer can be improved.
Description
Technical field
The present invention relates to the Application Areas of photoelectron material and device, be specifically related to the method for the high indium component of a kind of employing low pressure metal chemistry of organic compound vapor deposition (Low Pressure Metal-Organic Chemical Vapor Deposition:LP-MOCVD) system growth low-dislocation-density indium gallium arsenic material.
Background technology
At present, in the development of infrared eye, in order to improve In
xGa
1-xThe investigative range of As infrared eye, must improve In
xGa
1-xThe component of In in As.Reach the requirement of detector extension wavelength greater than 1.7 μ m, the In component should be not less than 53%.But high In ingredient can cause between indium gallium arsenic absorption layer and substrate producing larger lattice mismatch, thereby at In
xGa
1-xIn As (x>=0.53) absorption layer, produce a large amount of dislocation defects, reduce quality of materials, cause detector performance to descend.
In order to overcome above-mentioned defect, mainly adopt at present the component method of transition gradually, the In of the In content gradually variational of namely at first growing between substrate and absorption layer
xGa
1-xAs buffer layer, the then In of growth needs component thereon
xGa
1-xThe method of As absorption layer.The method can effectively suppress dislocation, improves the quality of absorption layer, thereby detector performance is improved.But after the method needs the buffer layer of growth thickness more than at least 3 microns, the absorption layer of the required component of could growing, and the dislocation desity of absorption layer is still larger.
Summary of the invention
The present invention will solve the existing component absorption layer dislocation desity of the transition method growth technical problem that causes greatly detector performance to descend gradually, and the method for the high indium component of a kind of LP-MOCVD of employing system growth low-dislocation-density indium gallium arsenic material is provided.
In order to solve the problems of the technologies described above, technical scheme of the present invention is specific as follows:
A kind of method that adopts the high indium component of LP-MOCVD system growth low-dislocation-density indium gallium arsenic material, the method comprises the following steps:
Step 1, in the LP-MOCVD system, substrate is warming up to 650 ℃～700 ℃ after constant temperature 5min, carry out deoxidation treatment;
Step 2, on the basis of step 1, temperature is reduced to 400～450 ℃, after temperature-stable 3min, growth thickness be 10nm～20nm, with the first low temperature buffer layer of the described substrate homogeneity of step 1;
Step 3, on the basis of step 2, keep temperature-resistant, growth thickness is the In of 30nm～120nm
xGa
1-xAs the second low temperature buffer layer;
Step 4, at the basis of step 3 rising high-temperature, constant temperature 3min～5min after temperature reaches 600 ℃～650 ℃, then growth thickness be 1～5 μ m, with the In of described the second low temperature buffer layer same composition of step 3
xGa
1-xAs high temperature absorption layer, obtain the high indium component of low-dislocation-density indium gallium arsenic material.
In technique scheme, the substrate described in step 1 is InP (001) or GaAs (001).
In technique scheme, the In described in step 3 and four
xGa
1-xAs, wherein, x>=0.53.
The invention has the beneficial effects as follows:
1, the method for the high indium component of employing LP-MOCVD system growth low-dislocation-density of the present invention indium gallium arsenic material, the total thickness of first, second low temperature buffer layer is only 40～140nm, with buffer layer thickness in prior art (more than 3 microns), compare, significantly reduce the thickness of buffer layer, shortened Material growth time and growth efficiency.
2, the high indium component indium gallium arsenic (In of method growth of the present invention
xGa
1-xAs, x>=0.53) the X ray rocking curve full width at half maximum (FWHM) of absorption layer material can be reduced to 1/3 of traditional method, according to the Hirsch model, calculate, dislocation desity has reduced by 90%, thereby effectively reduce the dislocation desity of absorption layer, improved the growth quality of absorption layer epitaxial material.
The accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Fig. 1 is the structural representation of the high indium component indium gallium arsenic material of the inventive method growth.
Embodiment
Invention thought of the present invention is: method of the present invention is to adopt the LP-MOCVD system, adopt the high indium component of low temperature buffer layer method growth low-dislocation-density indium gallium arsenic material, this material is two low temperature buffer layer structures, comprises substrate, the first low temperature buffer layer, the second low temperature buffer layer and high temperature absorption layer (seeing accompanying drawing 1).Because atom under low temperature does not have sufficient movement to equilibrium theory of tide, the growth quality of material can be poor.And, for the material of lattice mismatch, will produce more dislocation defects and mismatch stress is fully discharged.Like this, during the absorption layer material of the same lattice parameter of at high temperature growing, between absorption layer and buffer layer, be matching structure, dislocation defects just can significantly reduce.That is to say and be equivalent to dislocation defects is suppressed to concentrate in low temperature buffer layer, and the total thickness of first and second low temperature buffer layer is also smaller, thereby protected the quality of useful absorption layer.The dislocation desity of absorption layer is low, and detector performance just can significantly improve.
The method of the high indium component of employing LP-MOCVD system growth low-dislocation-density of the present invention indium gallium arsenic material specifically comprises the following steps:
Step 1, adopt the LP-MOCVD system, InP (001) or GaAs (001) substrate are warming up to 650 ℃～700 ℃ after after constant temperature 5mi n, carry out surperficial deoxidation treatment, obtain clean surface;
Step 2, when temperature is reduced to 400 ℃～450 ℃ of low temperature on the basis of step 1, after temperature-stable 3min, growth a layer thickness is 10nm～20nm and the InP substrate homogeneity (001) or GaAs (001) first low temperature buffer layer, makes surface more smooth and has better reactive behavior;
Step 3, on the basis of step 2, keep temperature-resistant, the high In ingredient In of growth 30～120nm
xGa
1-xAs (x>=0.53) the second low temperature buffer layer, make the misfit dislocation defect mainly be released in this buffer layer;
Step 4, the growth temperature that raises on the described low temperature of step 3 basis, rising temperature to 600 ℃～650 ℃, the In of growth and 1～5 μ m of the second low temperature buffer layer same composition at this temperature
xGa
1-xAs (x>=0.53) high temperature absorption layer, obtain the high indium component of low-dislocation-density indium gallium arsenic material.
Example one
Step 1, in the LP-MOCVD system, InP (001) substrate is warming up to 650 ℃ after constant temperature 5min, carry out deoxidation treatment, obtain clean surface;
Step 2, temperature is reduced to 400 ℃ on the basis of step 1, after temperature-stable 3min growth 10nm, with InP (001) first low temperature buffer layer of substrate homogeneity, make surface more smooth and have better reactive behavior;
Step 3, on the basis of step 2, keep temperature-resistant, the In of growth 30nm
0.82Ga
0.18As the second low temperature buffer layer, make the misfit dislocation defect mainly be released in this buffer layer;
Step 4, the growth temperature that raises on the described low temperature of step 3 basis, constant temperature 3min after temperature reaches 600 ℃, the then In of 5 μ m of growth and the second low temperature buffer layer same composition
0.82Ga
0.18As high temperature absorption layer, obtain the high indium component of low-dislocation-density indium gallium arsenic material.
Example two
Step 1, in the LP-MOCVD system, GaAs (001) substrate is warming up to 700 ℃ after constant temperature 5min, carry out deoxidation treatment, obtain clean surface;
Step 2, temperature is reduced to 450 ℃ on the basis of step 1, after temperature-stable 3min growth 20nm, with GaAs (001) first low temperature buffer layer of substrate homogeneity, make surface more smooth and have better reactive behavior;
Step 3, on the basis of step 2, keep temperature-resistant, the In of growth 120nm
0.53Ga
0.47As the second low temperature buffer layer, make the misfit dislocation defect mainly be released in this buffer layer;
Step 4, the growth temperature that raises on the described low temperature of step 3 basis, constant temperature 5min after temperature reaches 650 ℃, the In of the 1 μ m that then grows
0.53Ga
0.47As high temperature absorption layer, obtain the high indium component of low-dislocation-density indium gallium arsenic material.
Obviously, above-described embodiment is only for example clearly is described, and is not the restriction to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without also giving all embodiments.And the apparent variation of being extended out thus or change still are among the protection domain of the invention.
Claims (3)
1. a method that adopts the high indium component of LP-MOCVD system growth low-dislocation-density indium gallium arsenic material, is characterized in that, the method comprises the following steps:
Step 1, in the LP-MOCVD system, substrate is warming up to 650 ℃～700 ℃ after constant temperature 5min, carry out deoxidation treatment;
Step 2, on the basis of step 1, temperature is reduced to 400～450 ℃, after temperature-stable 3min, growth thickness be 10nm～20nm, with the first low temperature buffer layer of the described substrate homogeneity of step 1;
Step 3, on the basis of step 2, keep temperature-resistant, growth thickness is the In of 30nm～120nm
xGa
1-xAs the second low temperature buffer layer;
Step 4, at the basis of step 3 rising high-temperature, constant temperature 3min～5min after temperature reaches 600 ℃～650 ℃, then growth thickness be 1～5 μ m, with the In of described the second low temperature buffer layer same composition of step 3
xGa
1-xAs high temperature absorption layer, obtain the high indium component of low-dislocation-density indium gallium arsenic material.
2. the method for the high indium component of employing LP-MOCVD system growth low-dislocation-density according to claim 1 indium gallium arsenic material, is characterized in that, the substrate described in step 1 is InP (001) or GaAs (001).
3. the method for the high indium component of employing LP-MOCVD system growth low-dislocation-density according to claim 1 indium gallium arsenic material, is characterized in that the In described in step 3 and four
xGa
1-xAs, wherein, x>=0.53.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356427A (en) * | 2016-11-08 | 2017-01-25 | 中国电子科技集团公司第四十四研究所 | Growth method for buffering layer of expanding wavelength near-infrared detector |
| CN112530792A (en) * | 2020-12-04 | 2021-03-19 | 浙江长芯光电科技有限公司 | Preparation method of indium gallium arsenic material |
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| CN112530792A (en) * | 2020-12-04 | 2021-03-19 | 浙江长芯光电科技有限公司 | Preparation method of indium gallium arsenic material |
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