CN102140695A - Method for growing high-indium InGaAs (indium gallium arsenic) - Google Patents
Method for growing high-indium InGaAs (indium gallium arsenic) Download PDFInfo
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- CN102140695A CN102140695A CN 201010604154 CN201010604154A CN102140695A CN 102140695 A CN102140695 A CN 102140695A CN 201010604154 CN201010604154 CN 201010604154 CN 201010604154 A CN201010604154 A CN 201010604154A CN 102140695 A CN102140695 A CN 102140695A
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- temperature
- indium
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Abstract
The invention discloses a method for growing high-indium InGaAs (indium gallium arsenic), and relates to the application field of electronic materials and devices, which solves the problems that in the traditional InxGal-xAs infrared detector, as the indium component in InxGal-xAs is increased to cause lattice mismatch with the InP substrate, the performance of the detector is reduced, and the thickness of a buffer layer is increased. The method comprises the following steps of: growing an InxGal-xAs buffer layer at the low temperature of 430 Deg C, then rising the temperature and carrying out constant-temperature treatment on the buffer layer at a high temperature; and then growing an InxGal-xAs epitaxial layer at the high temperature to obtain a high-indium InGaAs material. In the method, the thickness of the buffer layer is reduced, the growing time is shortened, and the quality of the epitaxial layer is improved.
Description
Technical field
The present invention relates to the Application Areas of photoelectron material and device.Be specifically related to a kind of technology of infrared detector material growth.
Background technology
At present, in the development of infrared eye, in order to improve In
xGa
1-xThe investigative range of As infrared eye must improve In
xGa
1-xThe component of In among the As improves the In component and must cause In
xGa
1-xAs and InP substrate produce lattice mismatch, thereby at In
xGa
1-xProduce defective among the As, reduce quality of materials, cause detector performance to descend.In order to reduce the defective that lattice mismatch causes, the main at present component method of transition gradually that adopts, i.e. growth one deck In close on the InP substrate with the InP lattice
xGa
1-xAs progressively improves the In component at each layer, then up to required component I n
xGa
1-xTill the As, growth needs component I n thereon then
xGa
1-xThe material of As.Need could grow the then epitaxial film of required component of the very thick buffer layer of growth like this, buffer layer thickness needs more than 3 microns at least.
Summary of the invention
The present invention is for solving existing In
xGa
1-xIn the As infrared eye owing to improve In
xGa
1-xIn and InP substrate produce lattice mismatch among the As, cause detector performance to descend, and have increased the problem of buffer layer thickness, and a kind of method of the high indium component indium gallium arsenic of growing is provided.
A kind of method of the high indium component indium gallium arsenic of growing, this method is realized by following steps:
Step 1, low-temperature epitaxy 60nm～80nm component is In on the InP substrate
xGa
1-xThe buffer layer of As;
Step 2, the growth temperature that raises on the described low temperature of step 1 basis, constant temperature was one to three minute after temperature reached 520 ℃～550 ℃, the In of growth and buffer layer same composition
xGa
1-xThe As epitaxial film, the indium gallium arsenic of the high indium component of realization growth.
Principle of the present invention: the present invention is expansion In
xGa
1-xThe application of the investigative range of As infrared eye has just provided and a kind ofly can reduce the defective that lattice mismatch causes again, can reduce the method for buffer layer thickness again, and the thickness of buffer layer can reduce to 80 nanometers.Employing is at the In of low-temperature epitaxy same composition
xGa
1-xAs is then at the In of the same component of high growth temperature
xGa
1-xThe As epitaxial film can reduce like this because the defective that lattice mismatch causes.
Beneficial effect of the present invention: the method for the high indium component of growth of the present invention indium gallium arsenic, reduced In
xGa
1-xThe defect concentration that the lattice mismatch of As and InP substrate produces does not need the component transition layer of growing very thick again, has shortened the time of growth, has improved growth efficiency when improving the quality of epitaxial film.
Description of drawings
Fig. 1 is the indium gallium arsenic structural representation of the high indium component of growth of the present invention.
Embodiment
The method of embodiment one, the described a kind of high indium component indium gallium arsenic of growing of present embodiment, this method is realized by following steps:
Step 1, low-temperature epitaxy 60nm～80nm component is In on the InP substrate
xGa
1-xThe buffer layer of As;
Step 2, the growth temperature that raises on the described low temperature of step 1 basis, constant temperature was one to three minute after temperature reached 520 ℃～550 ℃, the In of growth and buffer layer same composition
xGa
1-xThe As epitaxial film, the indium gallium arsenic of the high indium component of realization growth.
The described buffer layer In of step 1 in the present embodiment
xGa
1-xThe temperature of As low-temperature epitaxy is 420 ℃～450 ℃.
The described buffer layer In of step 1 in the present embodiment
xGa
1-xThe temperature of As low-temperature epitaxy is 430 ℃.
Constant temperature was one minute after the described temperature of step 2 reached 530 ℃ in the present embodiment, the In of growth and buffer layer same composition
xGa
1-xThe As epitaxial film.
The present invention adopts the In identical with the epitaxial film component of the low-temperature epitaxy one deck 80nm on the InP substrate of MOCVD system
xGa
1-xAs, the growth temperature that raises then, buffer layer In in temperature-rise period
xGa
1-xThe As annealing recrystallization discharges the stress that is caused by lattice mismatch, becomes the interface of next step growth, continues constant temperature 3 minutes after reaching 530 ℃, then at the In of 530 ℃ of growth same composition
xGa
1-xThe As epitaxial film.So just can prepare high indium component indium gallium arsenic material.
Claims (4)
- One kind the growth high indium component indium gallium arsenic method, it is characterized in that this method is realized by following steps:Step 1, low-temperature epitaxy 60nm～80nm component is In on the InP substrate xGa 1-xThe buffer layer of As;Step 2, the growth temperature that raises on the described low temperature of step 1 basis, constant temperature was one to three minute after temperature reached 520 ℃～550 ℃, the In of growth and buffer layer same composition xGa 1-xThe As epitaxial film, the indium gallium arsenic of the high indium component of realization growth.
- 2. the method for a kind of high indium component indium gallium arsenic of growing according to claim 1 is characterized in that the described buffer layer In of step 1 xGa 1-xThe temperature of As low-temperature epitaxy is 420 ℃～450 ℃.
- 3. the method for a kind of high indium component indium gallium arsenic of growing according to claim 2 is characterized in that the described buffer layer In of step 1 xGa 1-xThe temperature of As low-temperature epitaxy is 430 ℃.
- 4. the method for a kind of high indium component indium gallium arsenic of growing according to claim 1 is characterized in that constant temperature was one minute after the described temperature of step 2 reached 530 ℃, the In of growth and buffer layer same composition xGa 1-xThe As epitaxial film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010604154 CN102140695A (en) | 2010-12-24 | 2010-12-24 | Method for growing high-indium InGaAs (indium gallium arsenic) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010604154 CN102140695A (en) | 2010-12-24 | 2010-12-24 | Method for growing high-indium InGaAs (indium gallium arsenic) |
Publications (1)
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|---|---|
| CN102140695A true CN102140695A (en) | 2011-08-03 |
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Family Applications (1)
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|---|---|---|---|
| CN 201010604154 Pending CN102140695A (en) | 2010-12-24 | 2010-12-24 | Method for growing high-indium InGaAs (indium gallium arsenic) |
Country Status (1)
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103397376A (en) * | 2013-07-23 | 2013-11-20 | 中国科学院长春光学精密机械与物理研究所 | Method for growing InGaAs material with low dislocation density and high indium composition by adopting LP-MOCVD (Low Pressure Metal-Organic Chemical Vapor Deposition) system |
| CN108022986A (en) * | 2017-12-04 | 2018-05-11 | 中电科技集团重庆声光电有限公司 | Near-infrared lattice mismatch detector cushion |
| CN116705882A (en) * | 2023-08-08 | 2023-09-05 | 中科爱毕赛思(常州)光电科技有限公司 | Epitaxial material structure of low-defect superlattice infrared detector and preparation method |
-
2010
- 2010-12-24 CN CN 201010604154 patent/CN102140695A/en active Pending
Non-Patent Citations (5)
| Title |
|---|
| 《Applied Surface Science》 20101013 Xia Liu等 Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD 1996-1999 , 第257期 * |
| 《Journal of Alloys and Compounds》 20080711 Tiemin Zhang等 Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique 587-590 第472卷, * |
| 《Materials Science in Semiconductor Processing》 20091030 Tiemin Zhang等 A study of two-step growth and properties of In0.82Ga0.18As on InP 156-160 , 第12期 * |
| 《发光学报》 20021031 缪国庆等 生长温度对In0153Ga0147As/ InP 的LPMOCVD 生长影响 第23卷, 第5期 * |
| 《发光学报》 20091231 张铁民等 缓冲层生长温度对In0.82Ga0.18As薄膜结构及电学性能的影响 第30卷, 第6期 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103397376A (en) * | 2013-07-23 | 2013-11-20 | 中国科学院长春光学精密机械与物理研究所 | Method for growing InGaAs material with low dislocation density and high indium composition by adopting LP-MOCVD (Low Pressure Metal-Organic Chemical Vapor Deposition) system |
| CN108022986A (en) * | 2017-12-04 | 2018-05-11 | 中电科技集团重庆声光电有限公司 | Near-infrared lattice mismatch detector cushion |
| CN108022986B (en) * | 2017-12-04 | 2019-09-03 | 中电科技集团重庆声光电有限公司 | Near-infrared lattice mismatch detector buffer layer |
| CN116705882A (en) * | 2023-08-08 | 2023-09-05 | 中科爱毕赛思(常州)光电科技有限公司 | Epitaxial material structure of low-defect superlattice infrared detector and preparation method |
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Application publication date: 20110803 |