CN106711252A - Epitaxial structure containing buffer layer and preparation method of epitaxial structure - Google Patents
Epitaxial structure containing buffer layer and preparation method of epitaxial structure Download PDFInfo
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- CN106711252A CN106711252A CN201611060442.0A CN201611060442A CN106711252A CN 106711252 A CN106711252 A CN 106711252A CN 201611060442 A CN201611060442 A CN 201611060442A CN 106711252 A CN106711252 A CN 106711252A
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- cushion
- buffer layer
- epitaxial structure
- pack system
- gradual change
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- 239000000872 buffer Substances 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims description 17
- 239000000463 material Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000008859 change Effects 0.000 claims description 35
- 238000003475 lamination Methods 0.000 claims description 23
- 230000003139 buffering effect Effects 0.000 claims description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 230000003746 surface roughness Effects 0.000 abstract 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an epitaxial structure containing a buffer layer. The epitaxial structure comprises a substrate, a basic buffer layer, ladder gradient buffer stacked layers and a gradient buffer layer. According to the structure disclosed by the invention, the linear gradient buffer layer grows between the ladder gradient buffer stacked layers so as to realize the aims of reducing the surface roughness of an abnormally changed material and increasing the crystallization quality of the abnormally changed material; the thickness of the linear gradient layer is controlled to be within 50nm. The linear gradient buffer layer grows between the ladder gradient buffer stacked layers and a source does not need to be interrupted in a growth process, so that the growth is easier to manipulate, the cost is low and the production is facilitated. The invention further provides a growth method of the epitaxial structure containing the buffer layer.
Description
Technical field
The invention belongs to Macrolattice mismatch epitaxial material buffer layer structure and its preparation field, more particularly to one kind is in ladder
Structure of linear graded buffer layer and preparation method thereof is grown between gradual change buffering lamination.
Background technology
With the development and the progress of material epitaxy technology of semiconductor energy gap engineering, hetero epitaxial materials have obtained more extensive
Attention.On substrate during the material of extension lattice mismatch, in the case where mismatch epitaxial layer is sufficiently thin, the lattice of epitaxial layer is normal
Number can be consistent in the presence of the deformation energy produced by lattice mismatch with the lattice parameter of substrate, in order to avoid produce dislocation.
However, when epitaxial thickness exceedes certain thickness (referred to as critical thickness), the lattice parameter of lattice mismatch epitaxial layer will be spontaneous extensive
Its intrinsic lattice parameter is arrived again, so as to produce misfit dislocation and reduce quality of materials.The size of critical thickness and two kinds of materials
Between lattice mismatch size it is relevant, it is however generally that, lattice mismatch is bigger, and critical thickness is smaller；Lattice mismatch is smaller, faces
Boundary's thickness is bigger.For the hetero epitaxial materials with substrate with larger lattice mismatch, the high-quality growth of material is faced with
Very big difficulty, Material growth becomes the bottleneck that materials application is further improved in wide range of areas and device performance.
For example, so-called Wave scalable InGaAs detector of the cutoff wavelength more than 1.7 μm has emphatically at the aspect such as space remote sensing and imaging
The application wanted, by increasing InxGa1-xThe component x of In in As, can be by InxGa1-xThe cutoff wavelength of As detectors is to long wave side
To extension, but this can cause In simultaneouslyxGa1-xLattice mismatch between As materials and InP substrate.For example, by InGaAs detectors
Cutoff wavelength expand to 2.5mm from 1.7 μm, it is necessary to In components is increased to 0.8 from 0.53, this can make InGaAs and InP
Lattice mismatch between substrate reaches+1.8%, and so big lattice mismatch is easy to make produce defect and dislocation, limitation in material
The further raising of device performance, so needing material structure and growth side that development improves lattice mismatch epitaxial material quality badly
Method.
To solve this problem, people grow corresponding cushion between Macrolattice mismatch epitaxial material and substrate, it is intended to
Misfit dislocation and defect are limited in cushion and improve the quality of materials of Macrolattice mismatch epitaxial material.For example, to grow x
=0.8 InxGa1-xAs materials, its component value x is changed to by 0.53 with InP Lattice Matchings by way of ladder gradual change
0.8, the In of content gradually variationalxGa1-xAs cushions can discharge the stress of lattice mismatch generation, reduce In0.8Ga0.2In As materials
The defect and dislocation of generation.
However, substantial amounts of position can be produced in the interface of each one pack system cushion of the buffering lamination of ladder gradual change
Mistake, if these dislocations can not be controlled effectively, newly-generated dislocation will be substantially exceeded in cushion release stress path
The dislocation of fusion so that the buffering lamination of the ladder gradual change that growth is obtained produces great imperfection, it is impossible to form preferable
Lattice structure, so as to influence the lattice quality of Macrolattice mismatch epitaxial material on cushion.
The content of the invention
(1) technical problem to be solved
The invention provides a kind of epitaxial structure comprising cushion, improve what ladder gradual change buffering laminate interface was produced
Dislocation density, increases dislocation fusion probability, improves the quality of material crystals.
(2) technical scheme
It is slow the invention provides a kind of epitaxial structure comprising cushion, including substrate, basic cushion and ladder gradual change
Lamination is rushed, the basic cushion and ladder gradual change buffering lamination are grown on substrate from bottom to top, the ladder gradual change buffering
Lamination is made up of multiple one pack system cushions, and the composition of each one pack system cushion is presented stair-stepping list on epitaxial growth direction
Modulation；
Mode is preferably carried out as one kind, be grown between each one pack system cushion of the ladder gradual change buffering lamination
Linear graded buffer layer, the component of the linear graded buffer layer is presented linear change along epitaxial growth direction；
Mode is preferably carried out as one kind, the basic cushion is identical with the material of substrate；
Mode is preferably carried out as one kind, the one pack system that the two ends component of the linear graded buffer layer is adjacent thereto is delayed
The component for rushing layer is identical；
Mode is preferably carried out as one kind, the thickness of the linear graded buffer layer is in 0~50nm；
Mode is preferably carried out as one kind, the thickness of each one pack system cushion of the ladder gradual change buffering lamination is big
In 50nm；
Mode is preferably carried out as one kind, the material of the substrate is InP or GaAs；
Mode is preferably carried out as one kind, the material of the basic cushion is InP or GaAs；
Mode is preferably carried out as one kind, the material of each one pack system cushion of the ladder gradual change buffering lamination is
InAsxP1-xOr InxAl1-xAs, x scope are 0 to 1；
Mode is preferably carried out as one kind, the material of the property graded buffer layer is InAsxP1-xOr InxAl1-xAs, x model
Enclose for 0 to 1；
Present invention also offers a kind of preparation method of the epitaxial structure comprising cushion, comprise the following steps：
S1：In the basic cushion of Grown；
S2：The combination of at least one one pack system cushion and linear graded buffer layer composition is grown on basic cushion
Layer；
S3：After one one pack system cushion of regrowth on the combination layer, the growth of targeted epitaxial layer is carried out.
(3) beneficial effect
The epitaxial structure comprising cushion that the present invention is provided, the presence of the linear graded buffer layer in the structure is served
Suppress dislocation to extend, increase the effect that dislocation merges probability, improve crystalline quality of material, Macrolattice mismatch epitaxial material can be made to exist
Fast and effectively there is relaxation release stress in ladder gradual change buffering lamination, reduce cushion dislocation density, it is not necessary at interface
Place carries out the interruption of source switching, is conducive to being kept in growth course the stabilization of source flux, improves the growth quality of material, and
Reduction source consumes, and then reduces production cost.
Brief description of the drawings
Fig. 1 is the epitaxial structure schematic diagram comprising cushion of the invention；
Fig. 2 is the schematic diagram of the mismatch change of the epitaxial structure comprising cushion that the present invention is provided；
Fig. 3 is the flow chart of the preparation method of the epitaxial structure comprising cushion of the invention.
Specific embodiment
Epitaxial structure comprising cushion of the invention, including substrate, basic cushion and ladder gradual change buffering lamination, such as
Shown in Fig. 1, basic cushion and ladder gradual change buffering lamination are grown on substrate from bottom to top, and ladder gradual change buffers lamination by many
Individual one pack system cushion is constituted, and the composition of each one pack system cushion is presented stair-stepping monotone variation on epitaxial growth direction；
Linear graded buffer layer, the component of linear graded buffer layer are grown between each one pack system cushion of ladder gradual change buffering lamination
Linear change is presented along epitaxial growth direction.
Fig. 2 is the schematic diagram of the mismatch change of the epitaxial structure comprising cushion that the present invention is provided.With epitaxial layer
Growth, one pack system buffer layer lattice constant changes to the lattice parameter of targeted epitaxial layer, therefore lattice from substrate lattice constant
Mismatch is also gradually increasing, and the change of its lattice mismatch is as shown in Figure 2.In whole growth course, with growth thickness
Increase, epitaxial layer lattice mismatch presses and change shown in figure, and during growth ladder buffer stack layer, each one pack system is delayed
Rush lattice mismatch in layer laminate and keep constant, and the lattice of the two one pack system cushions adjacent with linear graded buffer layer loses
It is in stepped change with degree.The linear graded buffer layer can effectively reduce the product of each one pack system buffer layer interface dislocation
It is raw so as to be merged by linear gradient in the dislocation of each one pack system buffer layer interface, be conducive to the release of stress
With the raising of perfection of lattice.
Fig. 3 is the flow chart of the preparation method of the epitaxial structure comprising cushion of the invention, such as figure institute not：
Extension In0.8Ga0.2A kind of preparation method of the epitaxial structure comprising cushion of As Macrolattice mismatch materials, specifically
Step is as follows：
S1：First used different As and P components before formal growth, determine buffer layer lattice Material growth source flux and
Growth temperature；In InP substrate Epitaxial growth In0.8Ga0.2As mutations material for detector in InP substrate, it is necessary to first grow about
The basic cushions of 200nmInP.
S2：At least one is grown on basic cushion using common metal organic compound chemical gaseous phase depositing process high
Doped N-type InAsxP1-xOne pack system cushion and linear graded buffer layer composition combination layer, wherein x from InP Lattice Matchings
Change to 0.6.Each one pack system cushion by different x InAsxP1-xComposition, the value of x is respectively 0.12,025,0.37,
0.49,0.6, growth time about 1800s, the thickness of each one pack system cushion is 300nm.
In the interface of each one pack system cushion, respective components are varied continuously to by linear gradient adjacent thereto
Upper strata, the epitaxial layer can be simultaneously as lower contact layer.
S3：In InAs0.12P0.88The interface growth linear graded buffer layer of one pack system cushion, in linear graded buffer layer
In growth course, the switching and stopping in source are not done, line translation is directly entered to As sources and P sources by flow controller (MFC), adjust
As/P flows, whole process lasts about 50-300s；The operation of S2 is repeated until top layer is InAs0.6P0.4Untill, carry out InGaAs
The growth of material, Material growth thickness is about 1um.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail bright, it should be understood that the foregoing is only specific embodiment of the invention, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc. should be included in protection of the invention
Within the scope of.
Claims (18)
1. a kind of epitaxial structure comprising cushion, including substrate, basic cushion and ladder gradual change buffering lamination, it is described basic
Cushion and ladder gradual change buffering lamination are grown on substrate from bottom to top, and the ladder gradual change buffers lamination by multiple one pack systems
Cushion is constituted, and the composition of each one pack system cushion is presented stair-stepping monotone variation on epitaxial growth direction, and its feature exists
In：
Linear graded buffer layer, the linear gradient are grown between each one pack system cushion of the ladder gradual change buffering lamination
The component of cushion is presented linear change along epitaxial growth direction.
2. the epitaxial structure comprising cushion according to claim 1, it is characterised in that the basic cushion and substrate
Material it is identical.
3. the epitaxial structure comprising cushion according to claim 1, it is characterised in that the linear graded buffer layer
The component of two ends component one pack system cushion adjacent thereto is identical.
4. the epitaxial structure comprising cushion according to claim 1, it is characterised in that the linear graded buffer layer
Thickness is 0~50nm.
5. the epitaxial structure comprising cushion according to claim 1, it is characterised in that the ladder gradual change buffers lamination
Each one pack system cushion thickness be more than 50nm.
6. the epitaxial structure comprising cushion according to claim 1, it is characterised in that the material of the substrate is InP
Or GaAs.
7. the epitaxial structure comprising cushion according to claim 1, it is characterised in that the material of the basic cushion
It is InP or GaAs.
8. the epitaxial structure comprising cushion according to claim 1, it is characterised in that the ladder gradual change buffers lamination
Each one pack system cushion material be InAsxP1-xOr InxAll-xAs, x scope are 0 to 1.
9. the epitaxial structure comprising cushion according to claim 1, it is characterised in that the linear graded buffer layer
Material is InAsxP1-xOr InxAl1-xAs, x scope are 0 to 1.
10. a kind of preparation method of the epitaxial structure comprising cushion, comprises the following steps：
S1：In the basic cushion of Grown；
S2：The combination layer of at least one one pack system cushion and linear graded buffer layer composition is grown on basic cushion；
S3：After one one pack system cushion of regrowth on the combination layer, the growth of targeted epitaxial layer is carried out；
Wherein, the composition of each one pack system cushion composition ladder gradual change buffering lamination, and each one pack system cushion is in extension
Stair-stepping monotone variation is presented in the direction of growth；
The composition of the linear graded buffer layer is presented linear change along epitaxial growth direction.
11. preparation methods according to claim 10, it is characterised in that the material phase of the basic cushion and substrate
Together.
12. preparation methods according to claim 10, it is characterised in that the two ends component of the linear graded buffer layer with
The component of its adjacent one pack system cushion is identical.
13. preparation methods according to claim 10, it is characterised in that the thickness of the linear graded buffer layer be 0~
50nm。
14. preparation methods according to claim 10, it is characterised in that the ladder gradual change buffers each single group of lamination
The thickness of cushion is divided to be more than 50nm.
15. preparation methods according to claim 10, it is characterised in that the material of the substrate is InP or GaAs.
16. preparation methods according to claim 10, it is characterised in that the material of the basic cushion be InP or
GaAs。
17. preparation methods according to claim 10, it is characterised in that the ladder gradual change buffers each single group of lamination
The material for dividing cushion is InAsxP1-xOr InxAl1-xAs, x scope are 0 to 1.
18. preparation methods according to claim 10, it is characterised in that the material of the property graded buffer layer is
InAsxP1-xOr InxAl1-xAs, x scope are 0 to 1.
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| CN201611060442.0A CN106711252A (en) | 2016-11-25 | 2016-11-25 | Epitaxial structure containing buffer layer and preparation method of epitaxial structure |
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| CN201611060442.0A CN106711252A (en) | 2016-11-25 | 2016-11-25 | Epitaxial structure containing buffer layer and preparation method of epitaxial structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511532A (en) * | 2018-04-03 | 2018-09-07 | 扬州乾照光电有限公司 | A kind of multijunction solar cell of lattice mismatch and preparation method thereof |
| CN110797392A (en) * | 2018-08-01 | 2020-02-14 | 环球晶圆股份有限公司 | Epitaxial structure |
| CN113284965A (en) * | 2021-05-14 | 2021-08-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | Epitaxial structure, epitaxial growth method and photoelectric device |
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| CN101814429A (en) * | 2009-11-03 | 2010-08-25 | 中国科学院上海微系统与信息技术研究所 | Macrolattice mismatch epitaxial material buffer layer structure containing superlattice isolated layer and preparation thereof |
| CN102011182A (en) * | 2010-09-28 | 2011-04-13 | 中国电子科技集团公司第十八研究所 | Method for manufacturing lattice graded buffer layer |
| CN102254954A (en) * | 2011-08-19 | 2011-11-23 | 中国科学院上海微系统与信息技术研究所 | Macrolattice mismatch epitaxial buffer layer structure containing digital dislocation separating layers and preparation method thereof |
| CN105720088A (en) * | 2014-12-03 | 2016-06-29 | 梁辉南 | Silicon-based gallium nitride epitaxial structure and manufacturing method thereof |
-
2016
- 2016-11-25 CN CN201611060442.0A patent/CN106711252A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101814429A (en) * | 2009-11-03 | 2010-08-25 | 中国科学院上海微系统与信息技术研究所 | Macrolattice mismatch epitaxial material buffer layer structure containing superlattice isolated layer and preparation thereof |
| CN102011182A (en) * | 2010-09-28 | 2011-04-13 | 中国电子科技集团公司第十八研究所 | Method for manufacturing lattice graded buffer layer |
| CN102254954A (en) * | 2011-08-19 | 2011-11-23 | 中国科学院上海微系统与信息技术研究所 | Macrolattice mismatch epitaxial buffer layer structure containing digital dislocation separating layers and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511532A (en) * | 2018-04-03 | 2018-09-07 | 扬州乾照光电有限公司 | A kind of multijunction solar cell of lattice mismatch and preparation method thereof |
| CN110797392A (en) * | 2018-08-01 | 2020-02-14 | 环球晶圆股份有限公司 | Epitaxial structure |
| CN110797392B (en) * | 2018-08-01 | 2023-04-18 | 环球晶圆股份有限公司 | Epitaxial structure |
| CN113284965A (en) * | 2021-05-14 | 2021-08-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | Epitaxial structure, epitaxial growth method and photoelectric device |
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