CN101814429A - Macrolattice mismatch epitaxial material buffer layer structure containing superlattice isolated layer and preparation thereof - Google Patents
Macrolattice mismatch epitaxial material buffer layer structure containing superlattice isolated layer and preparation thereof Download PDFInfo
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Abstract
The invention relates to a macrolattice mismatch epitaxial material buffer layer structure containing a superlattice isolated layer and preparation thereof. N layers of strain-free superlattice isolated layer materials are inserted in a component gradual change buffer layer, wherein n is a natural number and is not smaller than 1 and not larger than 5. The preparation process comprises the following steps of: firstly, determining the parameters of growth temperature, beam source furnace temperature and other parameters; and then sequentially and alternately growing buffer layers with gradually increased strain capacities and strain-free superlattice isolated layer materials on a substrate by adopting a molecular beam epitaxy method until finishing the growth of a buffer layer reaching an expected strain capacity. The material contains the superlattice isolated layer and can ensure that relaxation can quickly and effectively occur to a macrolattice mismatch epitaxial material to release stress in the buffer layer so as to reduce the dislocation density of the epitaxial material on the buffer layer. Moreover, the uninterrupted growth of the material is carried out by adopting a conventional molecular beam epitaxy method, thus the invention has the advantages of easy control of operations, low cost, environmental protection, and the like.
Description
Technical field
The invention belongs to Macrolattice mismatch epitaxial material buffer layer structure and preparation field thereof, particularly relate to a kind of Macrolattice mismatch epitaxial material buffer layer structure and preparation thereof that comprises the superlattice separator.
Background technology
Along with the development and the material epitaxy development of technology of semiconductor energy gap engineering, obtained increasing attention with the heteroepitaxy material of substrate lattice mismatch.During extension lattice mismatch material, under the enough thin situation of mismatch epitaxial layer, the lattice constant of epitaxial loayer can be consistent with the lattice constant of substrate under the effect of the deformation energy that produces because of lattice mismatch, to avoid producing dislocation on substrate.Yet when epitaxial thickness surpasses certain thickness when (being called critical thickness), the lattice constant of lattice mismatch epitaxial loayer is with spontaneous its intrinsic lattice constant that returns to, thereby produces misfit dislocation and reduction quality of materials.The size of critical thickness is relevant with the lattice mismatch size of two kinds of storerooms, and generally speaking, lattice mismatch is big more, and critical thickness is more little; Lattice mismatch is more little, and critical thickness is big more.For having heteroepitaxy material than the Macrolattice mismatch degree with substrate, the high-quality growth of material is faced with very big difficulty, and material grows into for material and is applied to the bottleneck that more wide spectrum and device performance further improve.For example, cut-off wavelength has important use greater than the so-called Wave scalable InGaAs detector of 1.7 μ m at aspects such as space remote sensing and imagings, by increasing In
xGa
1-xThe component x of In among the As can be with In
xGa
1-xThe cut-off wavelength of As detector is to the expansion of long wave direction, but this can cause In simultaneously
xGa
1-xLattice mismatch between As material and InP substrate.For example, the cut-off wavelength of InGaAs detector to be expanded to 2.5 μ m from 1.7 μ m, just need make the In component increase to 0.8 from 0.53, this can make lattice mismatch between InGaAs and InP substrate reach+1.8%, so big lattice mismatch is easy to make and produces defective and dislocation, the further raising of limiting device performance in the material.So, need material structure and growing method that development improves lattice mismatch epitaxial material quality badly.
Be head it off, people insert corresponding resilient coating between Macrolattice mismatch epitaxial material and substrate, attempt misfit dislocation and drawbacks limit in resilient coating and improve the quality of materials of Macrolattice mismatch epitaxial material.For example, the grow In of x=0.8
0.8Ga
0.2The As material can be at InP substrate and In
0.8Ga
0.2The In of growth one layer component continuous gradation between the As ternary system material
xGa
1-xThe As resilient coating, its component value x is by varying continuously to 0.8 with 0.53 of InP lattice match, the In of content gradually variational
xGa
1-xThe As resilient coating can discharge the stress that lattice mismatch produces, and reduces In
0.8Ga
0.2Defective that produces in the As material and dislocation.
Yet, in the resilient coating of component continuous gradation, dislocation is easier to extend upward along epitaxial loayer, even extends to buffer-layer surface, make buffer-layer surface can not form perfect lattice structure, thereby influence the lattice quality of Macrolattice mismatch epitaxial material on the resilient coating.On the other hand, the change of component speed in the resilient coating of component continuous gradation can not be too fast, otherwise can cause lattice relaxation not exclusively and the increasing of lattice dislocation, so buffer layer thickness is thicker.But resilient coating does not all have special role on optics and electricity, so people wish the thinner resilient coating of growing on the basis that guarantees the resilient coating effect.
The problem that exists in realizing at Macrolattice mismatch epitaxial material resilient coating technology is necessary to study a kind of more effective and economic scheme, can realize fast and effectively lattice relaxation and discharges stress.
Summary of the invention
Technical problem to be solved by this invention provides a kind of Macrolattice mismatch epitaxial material buffer layer structure and preparation thereof that comprises the superlattice separator, this material has comprised the superlattice separator can be made Macrolattice mismatch epitaxial material fast and effeciently relaxation take place in resilient coating and discharge stress, thereby reduces the dislocation density of epitaxial material on the resilient coating; And advantages such as the molecular beam epitaxial method that adopts routine carries out the uninterrupted growth of material, has easily-controlled operation, and cost is low, and is environmentally friendly.
A kind of Macrolattice mismatch epitaxial material buffer layer structure that comprises the superlattice separator of the present invention is characterized in that: inserting the n layer in the content gradually variational resilient coating does not have the strained super lattice insolated layer materials, and n is a natural number, 1≤n≤5.
The described Macrolattice mismatch epitaxial material buffer layer structure that comprises the superlattice separator, it is characterized in that: the cushioning layer material lattice match of material and insert division in the described no strained super lattice separator, and material component remains unchanged in individual layer superlattice separator growth course.
The described Macrolattice mismatch epitaxial material buffer layer structure that comprises the superlattice separator, it is characterized in that: the thickness of described no strained super lattice separator is about 20～200nm;
Described no strained super lattice insolated layer materials is In
xAl
1-xAs/In
xGa
1-xAs, wherein, 0＜x＜1;
Described no strained super lattice insolated layer materials is In
xGa
1-xSb/In
xAl
1-xSb, wherein, 0＜x＜1.
A kind of preparation method who comprises the Macrolattice mismatch epitaxial material buffer layer structure of superlattice separator of the present invention comprises:
(1) growth parameter(s)s such as the growth temperature of definite earlier growth and substrate lattice matching materials, electron gun furnace temperature before formally growing;
(2) adopt the molecular beam epitaxial method growth material, insert the n layer and do not have the strained super lattice insolated layer materials in the content gradually variational resilient coating, n is a natural number, 1≤n≤5;
The growth course of buffer layer structure is by beginning with the substrate lattice matched materials, by continuous rising or reduction electron gun furnace temperature, growth components graded buffer layer;
(3) operation of repeating step (2), different is the growth of resilient coating each time, the dependent variable of its relative substrate all can increase;
(4) at last with content gradually variational to the upper layer of material lattice match, finish the growth of resilient coating.
With the In that on the InP substrate, grows
0.8Ga
0.2The resilient coating that As adopted is an example, inserts 2 layers of no strain In
xAl
1-xAs/In
xGa
1-xAs superlattice insolated layer materials, 0＜x＜1, concrete steps are as follows:
(1) before formal growth, adopt identical In electron gun temperature to determine the In of growth lattice match on the InP substrate by the preparation growth earlier
0.52Al
0.48As and In
0.53Ga
0.47Electron gun furnace temperature during As;
(2) growth course of buffer layer structure by with the In of InP substrate lattice coupling
0.53Ga
0.47The growth parameter(s) of As material begins, by raising In electron gun temperature and reduce Ga electron gun temperature simultaneously, with content gradually variational to In
0.62Ga
0.38As, growth time 1750 seconds, thickness are 0.5 ± 0.02 μ m;
(3) growth 10 cycle In
0.62Al
0.38As/In
0.62Ga
0.38The As superlattice, interim weekly InAlAs and InGaAs thickness are 5nm;
(4) continued growth content gradually variational InGaAs resilient coating, by raising In electron gun temperature and reduce Ga electron gun temperature simultaneously, with content gradually variational to In
0.71Ga
0.29As, growth time 1750 seconds, growth thickness are 0.5 ± 0.02 μ m;
(5) growth 10 cycle In
0.71Al
0.29As/In
0.71Ga
0.29The As superlattice, interim weekly InAlAs and InGaAs thickness are 5nm;
(6) the last thick content gradually variational InGaAs resilient coating of regrowth 0.5 ± 0.02 μ m, by raising In electron gun temperature and reduce Ga electron gun temperature simultaneously, with content gradually variational to In
0.8Ga
0.2As, growth time 1750 seconds, growth thickness are 0.5 ± 0.02 μ m.
With the growth resilient coating that InSb was adopted on the GaSb substrate is example, inserts 2 layers of no strain In
xGa
1-xSb/In
xAl
1-xSb superlattice insolated layer materials, 0＜x＜1, concrete steps are as follows:
(1) before formal the growth, earlier by the preparation growth, the electron gun furnace temperature when determining on the GaSb substrate, to grow GaSb and InSb;
(2) growth course of buffer layer structure is begun by the GaSb material, opens In electron gun shutter simultaneously, and In electron gun temperature begins continuous intensification from low temperature, and Ga electron gun temperature is lowered the temperature the In of growth components gradual change continuously simultaneously
xGa
1-xThe Sb material makes content gradually variational to In
0.33Ga
0.67Sb, growth time 1750 seconds, thickness are 0.5 ± 0.02 μ m;
(3) growth 10 cycle In
0.33Ga
0.67Sb/In
0.25Al
0.75The Sb superlattice, interim weekly InGaSb and InAlSb thickness are 5nm;
(4) continued growth content gradually variational InGaSb resilient coating, by In electron gun temperature and the reduction Ga electron gun temperature of raising simultaneously, growth components is from In
0.33Ga
0.67The Sb gradual change is to In
0.67Ga
0.33Sb, growth time 1750 seconds, growth thickness are 0.5 ± 0.02 μ m;
(5) growth 10 cycle In
0.67Ga
0.33As/In
0.63Al
0.37The Sb superlattice, interim weekly InGaSb and InAsSb thickness are 5nm;
(6) the last thick content gradually variational InGaSb resilient coating of regrowth 0.5 ± 0.02 μ m, by In electron gun temperature and the reduction Ga electron gun temperature of raising simultaneously, growth components is from In
0.67Ga
0.33The Sb gradual change is to InSb, and growth time 1750 seconds, growth thickness are 0.5 ± 0.02 μ m.
A kind of Macrolattice mismatch epitaxial material that contains the superlattice separator of the present invention is applied to the preparation of semiconductor device material.It is of the present invention that to relate to principle as follows:
(1) buffer layer structure design: inserting the n layer in component continuous gradation resilient coating does not have the strain isolating layer material, and component continuous gradation resilient coating is separated into the n+1 layer, and n is a natural number.The no straining isolated layer that inserts can effectively stop extending upward and accumulating of dislocation and stress, helps the release of lattice mismatch stress in resilient coating.Because the separator that inserts is strainless, so its insertion position, the number of plies and thickness etc. can regulated as the case may be in a big way freely.On the other hand, can suitably increase the change of component speed in the content gradually variational resilient coating,, thereby can reduce buffer layer thickness, save cost as long as guarantee not influence the lattice quality of upper strata resilient coating.
(2) insolated layer materials structural design: the purpose of separator is to stop extending upward and accumulating of dislocation and stress, and superlattice structure can play good effect owing to there is the multilayer ultra-thin materials to the prevention of dislocation.The content gradually variational resilient coating of insolated layer materials and insert division is wanted lattice match.In general, the cycle of superlattice does not need a lot (getting final product about about 10 cycles), and the superlattice gross thickness does not need very thick (about 100nm) yet.
(3) the molecular beam epitaxy uninterrupted growth technology of buffer layer structure realizes: adopt molecular beam epitaxial process to realize aforementioned buffer layer structure, in the content gradually variational resilient coating, can adopt the slow continuously simultaneously method that heats up and lower the temperature of electron gun is realized, make the component in the resilient coating gradually change, the speed that just can regulate content gradually variational by the rate of change of regulating the electron gun furnace temperature.In superlattice separator zone, keep electron gun temperature-resistant, adopt the used growth parameter(s) of insert division resilient coating.Can make the growth rate approximately constant by regulating electron gun variation of temperature speed, help improving quality of materials.
Beneficial effect
The buffer layer structure of Macrolattice mismatch epitaxial material provided by the invention, this structure has comprised the superlattice separator and has played the function that extends upward propagation that stops misfit dislocation, improve material behavior, can make Macrolattice mismatch epitaxial material in resilient coating, fast and effeciently relaxation take place and discharge stress, thereby reduce the dislocation density of epitaxial material on the resilient coating; And adopt conventional molecular beam epitaxial method to carry out the growth of material, there are not growth interruption processes such as heating and cooling in buffer layer structure, help in growth course, keeping the even curface attitude, guarantee the high-quality growth of material, and whole growth process has easily-controlled operation, advantages such as cost is low, and is environmentally friendly.
Description of drawings
Fig. 1 is that Macrolattice mismatch epitaxial material buffer layer structure dependent variable changes schematic diagram on the substrate that comprises the superlattice separator provided by the invention;
Fig. 2 is In on the InP substrate of a kind of InAlAs/InGaAs of comprising superlattice separator provided by the invention
0.8Ga
0.2As Macrolattice mismatch epitaxial material buffer layer structure In change of component schematic diagram;
Fig. 3 is In on the InP substrate of a kind of InAlAs/InGaAs of comprising superlattice separator provided by the invention
0.8Ga
0.2As Macrolattice mismatch epitaxial material buffer layer structure schematic diagram;
Fig. 4 is an InSb Macrolattice mismatch epitaxial material buffer layer structure In change of component schematic diagram on the GaSb substrate of a kind of InGaSb/InAlSb of comprising superlattice separator provided by the invention;
Fig. 5 is an InSb Macrolattice mismatch epitaxial material buffer layer structure schematic diagram on the GaSb substrate of a kind of InGaSb/InAlSb of comprising superlattice separator provided by the invention;
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used to the present invention is described and be not used in and limit the scope of the invention.Should be understood that in addition those skilled in the art can make various changes or modifications the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
Be used for extension In on the InP substrate
0.8Ga
0.2The buffer layer structure that in component continuous gradation resilient coating, inserts InAlAs/InGaAs superlattice separator of As Macrolattice mismatch material
(1) need be on the InP substrate extension high-quality In
.8Ga
0.2As Macrolattice mismatch material, required growth thickness is thicker, surpasses critical thickness, need be at extension In
.8Ga
0.2Elder generation's growth resilient coating before the As material;
(2) adopt conventional molecular beam epitaxial method growth material, in the buffer layer structure In change of component schematic diagram as shown in Figure 2, the buffer layer structure schematic diagram as shown in Figure 3, at In
xGa
1-xInsert 2 layers of InAlAs/InGaAs superlattice in the As content gradually variational resilient coating, resilient coating is equally divided into 3 parts;
(3) before formal growth, adopt identical In electron gun temperature to determine the In of growth lattice match on the InP substrate by the preparation growth earlier
0.52Al
0.48As and In
0.53Ga
0.47Electron gun furnace temperature during As;
(4) growth course of buffer layer structure by with the In of InP substrate lattice coupling
0.53Ga
0.47The growth parameter(s) of As material begins, by raising In electron gun temperature and reduce Ga electron gun temperature simultaneously, with content gradually variational to In
0.62Ga
0.38As, growth time 1750 seconds, the about 0.5 μ m of thickness (concrete heating and cooling amplitude, speed can be adjusted as requested);
(5) growth 10 cycle In
0.62Al
0.38As/In
0.62Ga
0.38As superlattice, interim weekly InAlAs and InGaAs thickness are 5nm (concrete periodicity and periodic thickness can be adjusted as requested);
(6) continued growth content gradually variational InGaAs resilient coating, by raising In electron gun temperature and reduce Ga electron gun temperature simultaneously, with content gradually variational to In
0.71Ga
0.29As, growth time 1750 seconds, the same about 0.5 μ m of growth thickness;
(7) growth 10 cycle In
0.71Al
0.29As/In
0.71Ga
0.29As superlattice, interim weekly InAlAs and InGaAs thickness are 5nm (concrete periodicity and periodic thickness are adjusted as requested);
(8) regeneration is about the thick content gradually variational InGaAs resilient coating of 0.5 μ m at last, by raising In electron gun temperature and reduce Ga electron gun temperature simultaneously, with content gradually variational to In
0.8Ga
0.2As, growth time 1750 seconds, growth thickness are about 0.5 μ m;
(9) the buffer layer structure growth is finished, again the In that grows thereon
0.8Ga
0.2As Macrolattice mismatch material will have quality of materials preferably, can be applicable to device architecture.
Embodiment 2
The buffer layer structure that is used for extension InSb Macrolattice mismatch material on the GaSb substrate at InGaSb component continuous gradation resilient coating insertion InGaSb/InAlSb superlattice separator
(1) for the high-quality InSb Macrolattice mismatch material that extension is thicker on the GaSb substrate, In need grow earlier before extension InSb material
xGa
1-xSb buffer layer structure (0＜x＜1);
(2) adopt conventional molecular beam epitaxial method growth material, in the buffer layer structure In change of component schematic diagram as shown in Figure 4, the buffer layer structure schematic diagram as shown in Figure 5, at In
xGa
1-xInsert 2 layers of InGaSbAs/InAlSb superlattice in the Sb content gradually variational resilient coating, resilient coating is equally divided into 3 parts;
Electron gun furnace temperature when (3) before formally growing, determining on the GaSb substrate, to grow GaSb and InSb by the preparation growth earlier;
(4) growth course of buffer layer structure is begun by the GaSb material, opens In electron gun shutter simultaneously, and In electron gun temperature begins continuous intensification from low temperature, and Ga electron gun temperature is lowered the temperature the In of growth components gradual change continuously simultaneously
xGa
1-xThe Sb material makes content gradually variational to In
0.33Ga
0.67Sb, growth time 1750 seconds, the about 0.5 μ m of thickness (concrete heating and cooling amplitude, speed can be adjusted as requested);
(5) growth 10 cycle In
0.33Ga
0.67Sb/In
0.25Al
0.75Sb superlattice, interim weekly InGaSb and InAlSb thickness are 5nm (concrete periodicity and periodic thickness can be adjusted as requested);
(6) continued growth content gradually variational InGaSb resilient coating, by In electron gun temperature and the reduction Ga electron gun temperature of raising simultaneously, growth components is from In
0.33Ga
0.67The Sb gradual change is to In
0.67Ga
0.33Sb, growth time 1750 seconds, the same about 0.5 μ m of growth thickness;
(7) growth 10 cycle In
0.67Ga
0.33As/In
0.63Al
0.37Sb superlattice, interim weekly InGaSb and InAsSb thickness are 5nm (concrete periodicity and periodic thickness are adjusted as requested);
(8) regeneration is about the thick content gradually variational InGaSb resilient coating of 0.5 μ m at last, and by In electron gun temperature and the reduction Ga electron gun temperature of raising simultaneously, growth components is from In
0.67Ga
0.33The Sb gradual change is to InSb, growth time 1750 seconds, the about 0.5 μ m of growth thickness;
(9) the buffer layer structure growth is finished, and the InSb Macrolattice mismatch material of growth will have quality of materials preferably thereon again, can be applicable to device architecture.
Claims (8)
1. Macrolattice mismatch epitaxial material buffer layer structure that comprises the superlattice separator is characterized in that: inserting the n layer in the content gradually variational resilient coating does not have the strained super lattice insolated layer materials, and n is a natural number, 1≤n≤5.
2. a kind of Macrolattice mismatch epitaxial material buffer layer structure that comprises the superlattice separator according to claim 1, it is characterized in that: material and insert division resilient coating lattice match in the described no strained super lattice separator, and material component remains unchanged in individual layer superlattice separator growth course.
3. a kind of Macrolattice mismatch epitaxial material buffer layer structure that comprises the superlattice separator according to claim 1, it is characterized in that: the thickness of described no strained super lattice separator is about 20～200nm.
4. a kind of Macrolattice mismatch epitaxial material buffer layer structure that comprises the superlattice separator according to claim 1 is characterized in that: with the In that grows on the InP substrate
0.8Ga
0.2The resilient coating that As adopted is an example, and described no strained super lattice insolated layer materials is In
xAl
1-xAs/In
xGa
1-xAs, wherein, 0＜x＜1.
5. a kind of Macrolattice mismatch epitaxial material buffer layer structure that comprises the superlattice separator according to claim 1 is characterized in that: with the growth resilient coating that InSb was adopted on the GaSb substrate is example, and described no strained super lattice insolated layer materials is In
xGa
1-xSb/In
xAl
1-xSb, wherein, 0＜x＜1.
6. preparation method who comprises the Macrolattice mismatch epitaxial material buffer layer structure of superlattice separator comprises:
(1) growth temperature, the electron gun furnace temperature growth parameter(s) of definite earlier growth and substrate lattice matching materials before formally growing;
(2) adopt the molecular beam epitaxial method growth material, insert the n layer and do not have the strained super lattice insolated layer materials in the content gradually variational resilient coating, n is a natural number, 1≤n≤5;
The growth course of buffer layer structure is by beginning with the substrate lattice matched materials, by continuous rising or reduction electron gun furnace temperature, growth components graded buffer layer;
(3) operation of repeating step (2), different is the growth of resilient coating each time, the dependent variable of its relative substrate all can increase;
(4) at last with content gradually variational to the upper layer of material lattice match, finish the growth of resilient coating.
7. a kind of preparation method who comprises the Macrolattice mismatch epitaxial material buffer layer structure of superlattice separator according to claim 6 is characterized in that: with the In that grows on the InP substrate
0.8Ga
0.2The resilient coating that As adopted is an example, inserts 2 layers of no strain In
xAl
1-xAs/In
xGa
1-xAs superlattice insolated layer materials, 0＜x＜1, concrete steps are as follows:
(1) before formal growth, adopt identical In electron gun temperature to determine the In of growth lattice match on the InP substrate by the preparation growth earlier
0.52Al
0.48As and In
0.53Ga
0.47Electron gun furnace temperature during As;
(2) growth course of buffer layer structure by with the In of InP substrate lattice coupling
0.53Ga
0.47The growth parameter(s) of As material begins, by raising In electron gun temperature and reduce Ga electron gun temperature simultaneously, with content gradually variational to In
0.62Ga
0.38As, growth time 1750 seconds, thickness are 0.5 ± 0.02 μ m;
(3) growth 10 cycle In
0.62Al
0.38As/In
0.62Ga
0.38The As superlattice, interim weekly InAlAs and InGaAs thickness are 5nm;
(4) continued growth content gradually variational InGaAs resilient coating, by raising In electron gun temperature and reduce Ga electron gun temperature simultaneously, with content gradually variational to In
0.71Ga
0.29As, growth time 1750 seconds, growth thickness are 0.5 ± 0.02 μ m;
(5) growth 10 cycle In
0.71Al
0.29As/In
0.71Ga
0.29The As superlattice, interim weekly InAlAs and InGaAs thickness are 5nm;
(6) the last thick content gradually variational InGaAs resilient coating of regrowth 0.5 ± 0.02 μ m, by raising In electron gun temperature and reduce Ga electron gun temperature simultaneously, with content gradually variational to In
0.8Ga
0.2As, growth time 1750 seconds, growth thickness are 0.5 ± 0.02 μ m.
8. a kind of preparation method who comprises the Macrolattice mismatch epitaxial material buffer layer structure of superlattice separator according to claim 6 is characterized in that: with the growth resilient coating that InSb was adopted on the GaSb substrate is example, inserts 2 layers of no strain In
xGa
1-xSb/In
xAl
1-xSb superlattice insolated layer materials, 0＜x＜1, concrete steps are as follows:
(1) before formal the growth, earlier by the preparation growth, the electron gun furnace temperature when determining on the GaSb substrate, to grow GaSb and InSb;
(2) growth course of buffer layer structure is begun by the GaSb material, opens In electron gun shutter simultaneously, and In electron gun temperature begins continuous intensification from low temperature, and Ga electron gun temperature is lowered the temperature the In of growth components gradual change continuously simultaneously
xGa
1-xThe Sb material makes content gradually variational to In
0.33Ga
0.67Sb, growth time 1750 seconds, thickness are 0.5 ± 0.02 μ m;
(3) growth 10 cycle In
0.33Ga
0.67Sb/In
0.25Al
0.75The Sb superlattice, interim weekly InGaSb and InAlSb thickness are 5nm;
(4) continued growth content gradually variational InGaSb resilient coating, by In electron gun temperature and the reduction Ga electron gun temperature of raising simultaneously, growth components is from In
0.33Ga
0.67The Sb gradual change is to In
0.67Ga
0.33Sb, growth time 1750 seconds, growth thickness are 0.5 ± 0.02 μ m;
(5) growth 10 cycle In
0.67Ga
0.33As/In
0.63Al
0.37The Sb superlattice, interim weekly InGaSb and InAsSb thickness are 5nm;
(6) the last thick content gradually variational InGaSb resilient coating of regrowth 0.5 ± 0.02 μ m, by In electron gun temperature and the reduction Ga electron gun temperature of raising simultaneously, growth components is from In
0.67Ga
0.33The Sb gradual change is to InSb, and growth time 1750 seconds, growth thickness are 0.5 ± 0.02 μ m.
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