CN106856211B - High In ingredient InGaAs detectors and preparation method thereof on a kind of Si (001) substrate - Google Patents
High In ingredient InGaAs detectors and preparation method thereof on a kind of Si (001) substrate Download PDFInfo
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- CN106856211B CN106856211B CN201611065587.XA CN201611065587A CN106856211B CN 106856211 B CN106856211 B CN 106856211B CN 201611065587 A CN201611065587 A CN 201611065587A CN 106856211 B CN106856211 B CN 106856211B
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- 239000000758 substrate Substances 0.000 title claims abstract description 42
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract description 30
- 239000004615 ingredient Substances 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000011896 sensitive detection Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000008276 ice cloud Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The present invention relates to high In ingredient InGaAs detectors on a kind of Si (001) substrate and preparation method thereof, and the panel detector structure is followed successively by the In grown under Si (001) substrate, GaP buffer layers, III group limit from lower to upperyAl1‑yThe In grown under As buffer layers, As limitsyAl1‑yAs buffer layers, InxGa1‑xAs absorbed layers and InyAl1‑yAs cap layers.Preparation method is epitaxial growth successively.The present invention may be implemented to prepare short-wave infrared high In ingredient InGaAs detectors on Si (001) substrate, be suitable for developing extensive infrared focal plane array and inexpensive device.
Description
Technical field
The invention belongs to Semiconductor Optoeletronic Materials and devices field, more particularly to high In groups on a kind of Si (001) substrate
Divide InGaAs detectors and preparation method thereof.
Background technology
With the In of InP substrate Lattice Matching0.53Ga0.47As ternary based materials have direct band gap and high electron mobility
Feature, energy gap about 0.75eV at room temperature, about 1.7 microns of corresponding wavelength can cover fiber optic communication wave band just,
Therefore In is used0.53Ga0.47As ternary based materials make photodetector obtained in optical communication field it is commonly used, and
Also there is important use in remote sensing, sensing and imaging etc..In remote sensing fields, detector of the cutoff wavelength more than 1.7 microns has
Wider purposes, more information can be reacted.For example, the detection near 2.1 microns is visited in ice cloud detection and mineral resources
There is important value in terms of survey, so there is important application in the space remote sensings such as meteorology, environment, resource field.Pass through increase
InxGa1-xThe component x of group-III element In elements can reduce the energy gap of InGaAs materials in As ternary based materials, to
Increase the cutoff wavelength of InGaAs detectors.For example, when x=0.7, the cutoff wavelength of InGaAs detectors can reach about 2.2
Micron.But the increase of In components can cause InGaAs materials and InP substrate no longer Lattice Matching, to introduce in the material
Dislocation causes material and device performance to be deteriorated.By being inserted into buffer layer between InP substrate and InGaAs absorbed layers, can incite somebody to action
Dislocation major limitation reduces the dislocation in InGaAs absorbed layers, puies forward the performance of high In ingredient InGaAs detectors in buffer layer,
Have been obtained for some progress.
One of the development trend of short-wave infrared InGaAs detector space remote sensing InGaAs detectors be prepare it is more extensive,
The focal plane arrays (FPA) of more pixels.Compared with InP substrate, Si substrates have the size and more preferably quality of bigger, are served as a contrast using Si
InGaAs detectors are developed at bottom can prepare more extensive focal plane, while be more easy to couple with reading circuit.However, being replaced using Si
When for substrate, the lattice mismatch between InGaAs and substrate is much larger than InP substrate, and the upper III-V extensions of Si also have big thermal mismatching
With antiphase domain problem, so on a si substrate carry out high In ingredient InGaAs detector extensions have prodigious challenge.
The method of iii-v device mainly has two major classes on Si substrates.The first kind is bonding, by Si substrates and iii-v
Epitaxial material is combined by way of bonding, then carries out subsequent device technique again.But high quality large-sized substrate
Bonding still have it is very highly difficult, the interface of bonding also has a significant impact to device property.Second class mode is on a si substrate
Epitaxial growth III-V material, on Si substrates on epitaxial growth GaAs, Si substrate on first extension Ge regrowth GaAs, Si substrates
Extension GaSb has made some progress, but the Si substrates that these modes use mostly use beveling or the lining with certain drift angle
Bottom increases great difficulty to device preparation, while quality of materials is also respectively present some degenerations.So there is an urgent need to send out
The method that high In ingredient InGaAs detectors are prepared on exhibition Si (001) substrate, to develop extensive more pixel focal plane arrays (FPA)s.
Invention content
Technical problem to be solved by the invention is to provide high In ingredient InGaAs detectors on a kind of Si (001) substrate and
Preparation method, the detector are suitable for developing extensive infrared focal plane array and inexpensive device.
High In ingredient InGaAs detectors on a kind of Si (001) substrate of the present invention, the panel detector structure is from lower to upper
It is followed successively by the In grown under Si (001) substrate, GaP buffer layers, III group limityAl1-yUnder As buffer layers, As limits
The In of growthyAl1-yAs buffer layers, InxGa1-xAs absorbed layers and InyAl1-yAs cap layers；Wherein, 0.52<y<1,0.53<x<1.
The In grown under the III group limityAl1-yThe thickness of As buffer layers is 30nm~100nm.
The In grown under the As limitsyAl1-yThe thickness of As buffer layers is 500nm~2 μm.
The In grown under the As limitsyAl1-yAs buffer layers are used as lower contact layer, In simultaneouslyyAl1-yAs cap layers are same
The upper contact layers of Shi Zuowei.
Two kinds of InyAl1-yAs buffer layers and InyAl1-yAs cap layers and InxGa1-xIt is identical that As absorbs layer lattice constant.
The preparation method of high In ingredient InGaAs detectors on a kind of Si (001) substrate of the present invention, including：
(1) in Si (001) Grown GaP buffer layers；
(2) under III group limit continued growth high In ingredient InyAl1-yAs buffer layers；
(3) under As limits continued growth high In ingredient InyAl1-yAs buffer layers, while as lower contact layer；
(4) continued growth high In ingredient InxGa1-xAs absorbed layers；
(5) In of continued growth high In ingredientyAl1-yAs cap layers, while as upper contact layer；
(6) photoetching table top, passivation, Deposit contact electrode, system are carried out to the epitaxial wafer of growth using conventional semiconductor process
It is standby to obtain detector.
Advantageous effect
The present invention prepares high In ingredient InGaAs detectors on the positive crystal orientation substrates of Si (001), without bonding, direct extension
The full structure of detector, simple and easy to do, control accurately, help to develop extensive, high pixel short-wave infrared InGaAs detectors coke
Planar array, and low cost may be implemented；Preparation method can also be used on Si (001) substrate preparing other III-V materials with
Device has good road ability.
Description of the drawings
Fig. 1 is the structural schematic diagram of high In ingredient InGaAs detectors on Si (001) substrate of the present invention；
Fig. 2 is In on Si (001) substrate of embodiment 10.7Ga0.3The structural schematic diagram of As detectors；
Fig. 3 is In on Si (001) substrate of embodiment 20.83Ga0.17The structural schematic diagram of As detectors.
Specific implementation mode
Present invention will be further explained below with reference to specific examples.It should be understood that these embodiments are merely to illustrate the present invention
Rather than it limits the scope of the invention.In addition, it should also be understood that, after reading the content taught by the present invention, people in the art
Member can make various changes or modifications the present invention, and such equivalent forms equally fall within the application the appended claims and limited
Range.
Embodiment 1
The present embodiment on Si (001) substrate to prepare In0.7Ga0.3For As detectors, the method illustrated the present invention,
As shown in Fig. 2, steps are as follows for the preparation method：
(1) in 1 μ m-thick GaP buffer layers of Si (001) Grown, the matching of material elementary cell；
(2) 50nm thickness In is grown under III group limit0.69Al0.31As buffer layers, ratio=2 V/III；
(3) 1 μ m-thick In is grown under As limits0.69Al0.31As buffer layers (while as lower contact layer), V/III ratios
=30, it is adulterated using Si, electron concentration is 3 × 1018cm-3；
(4) In that 2 μ m-thicks of growth undope0.7Ga0.3As absorbed layers；
(5) growth 500nm thickness In0.69Al0.31As cap layers (while as upper contact layer), are adulterated, hole concentration is using Be
5×1018cm-3；
(6) photoetching table top, passivation, Deposit contact electrode etc. are carried out to the epitaxial wafer of growth using conventional semiconductor process,
Prepare sensitive detection parts.After testing, cut-off wave is about 2.2 microns.
Embodiment 2
The present embodiment on Si (001) substrate to prepare In0.83Ga0.17For As detectors, the side that illustrates the present invention
Method, as shown in figure 3, steps are as follows for the preparation method：
(1) in 1.5 μ m-thick GaP buffer layers of Si (001) Grown；
(2) 80nm thickness In is grown under III group limit0.82Al0.18As buffer layers, ratio=1.5 V/III；
(3) 800nm thickness In is grown under As limits0.82Al0.18As buffer layers (while as lower contact layer), V/III
It than=50, is adulterated using Si, electron concentration is 3 × 1018cm-3；
(4) In that 1.5 μ m-thicks of growth undope0.83Ga0.17As absorbed layers；
(5) growth 500nm thickness In0.82Al0.18As cap layers (while as upper contact layer), are adulterated, hole concentration is using Be
5×1018cm-3；
(6) photoetching table top, passivation, Deposit contact electrode etc. are carried out to the epitaxial wafer of growth using conventional semiconductor process,
Prepare sensitive detection parts.After testing, cut-off wave is about 2.6 microns.
Claims (6)
1. high In ingredient InGaAs detectors on a kind of Si (001) substrate, it is characterised in that：The panel detector structure is from lower to upper
It is followed successively by the In grown under Si (001) substrate, GaP buffer layers, III group limityAl1-yUnder As buffer layers, As limits
The In of growthyAl1-yAs buffer layers, InxGa1-xAs absorbed layers and InyAl1-yAs cap layers；Wherein, 0.52<y<1,0.53<x<1.
2. high In ingredient InGaAs detectors on a kind of Si (001) substrate according to claim 1, it is characterised in that：Institute
State the In grown under III group limityAl1-yThe thickness of As buffer layers is 30nm~100nm.
3. high In ingredient InGaAs detectors on a kind of Si (001) substrate according to claim 1, it is characterised in that：Institute
State the In grown under As limitsyAl1-yThe thickness of As buffer layers is 500nm~2 μm.
4. high In ingredient InGaAs detectors on a kind of Si (001) substrate according to claim 1, it is characterised in that：Institute
State the In grown under As limitsyAl1-yAs buffer layers are used as lower contact layer, In simultaneouslyyAl1-yAs cap layers are used as above connect simultaneously
Contact layer.
5. high In ingredient InGaAs detectors on a kind of Si (001) substrate according to claim 1, it is characterised in that：Two
Kind InyAl1-yAs buffer layers and InyAl1-yAs cap layers and InxGa1-xIt is identical that As absorbs layer lattice constant.
6. the preparation method of high In ingredient InGaAs detectors on a kind of Si as described in claim 1 (001) substrate, including：
(1) in Si (001) Grown GaP buffer layers；
(2) under III group limit continued growth high In ingredient InyAl1-yAs buffer layers；
(3) under As limits continued growth high In ingredient InyAl1-yAs buffer layers, while as lower contact layer；
(4) continued growth high In ingredient InxGa1-xAs absorbed layers；
(5) In of continued growth high In ingredientyAl1-yAs cap layers, while as upper contact layer；
(6) photoetching table top, passivation, Deposit contact electrode are carried out to the epitaxial wafer of growth using conventional semiconductor process, are prepared into
To detector.
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| CN106856211B true CN106856211B (en) | 2018-10-19 |
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| CN111653649B (en) * | 2020-06-05 | 2023-09-05 | 中国科学院上海微系统与信息技术研究所 | Preparation method of Si-based InGaAs photoelectric detector and photoelectric detector |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4455351A (en) * | 1983-06-13 | 1984-06-19 | At&T Bell Laboratories | Preparation of photodiodes |
| CN101814429A (en) * | 2009-11-03 | 2010-08-25 | 中国科学院上海微系统与信息技术研究所 | Macrolattice mismatch epitaxial material buffer layer structure containing superlattice isolated layer and preparation thereof |
| CN103531648A (en) * | 2012-07-03 | 2014-01-22 | 吉林师范大学 | InGaAs heterojunction infrared detector line array and preparing method thereof |
| CN104538478A (en) * | 2014-12-09 | 2015-04-22 | 中国科学院上海技术物理研究所 | Wavelength extending indium gallium arsenic detector of composite passive film structure and manufacturing method |
| CN104576785A (en) * | 2014-12-04 | 2015-04-29 | 中国科学院上海微系统与信息技术研究所 | Mutation relaxation buffer layer for InGaAs probe with high In component |
| CN104617166A (en) * | 2015-01-22 | 2015-05-13 | 苏州苏纳光电有限公司 | Si substrate based InGaAs infrared detector and preparation method thereof |
-
2016
- 2016-11-28 CN CN201611065587.XA patent/CN106856211B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4455351A (en) * | 1983-06-13 | 1984-06-19 | At&T Bell Laboratories | Preparation of photodiodes |
| CN101814429A (en) * | 2009-11-03 | 2010-08-25 | 中国科学院上海微系统与信息技术研究所 | Macrolattice mismatch epitaxial material buffer layer structure containing superlattice isolated layer and preparation thereof |
| CN103531648A (en) * | 2012-07-03 | 2014-01-22 | 吉林师范大学 | InGaAs heterojunction infrared detector line array and preparing method thereof |
| CN104576785A (en) * | 2014-12-04 | 2015-04-29 | 中国科学院上海微系统与信息技术研究所 | Mutation relaxation buffer layer for InGaAs probe with high In component |
| CN104538478A (en) * | 2014-12-09 | 2015-04-22 | 中国科学院上海技术物理研究所 | Wavelength extending indium gallium arsenic detector of composite passive film structure and manufacturing method |
| CN104617166A (en) * | 2015-01-22 | 2015-05-13 | 苏州苏纳光电有限公司 | Si substrate based InGaAs infrared detector and preparation method thereof |
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