CN103915525A - Infrared focal plane detector capable of improving photoelectric conversion performance - Google Patents
Infrared focal plane detector capable of improving photoelectric conversion performance Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 238000005286 illumination Methods 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 230000004043 responsiveness Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000306 component Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
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Abstract
The invention relates to an infrared focal plane detector capable of improving the photoelectric conversion performance. The infrared focal plane detector capable of improving the photoelectric conversion performance comprises focal plane photosensitive elements located on the backlight face in the center of a chip, n-type metal electrodes connected with the photosensitive elements and common electrodes made of p-type semiconductor materials, wherein the photosensitive elements are surrounded by the common electrodes. The infrared focal plane detector further comprises light shields located on the light-facing faces of the common electrodes, and incident infrared light is prevented from being emitted to the light-facing faces of the common electrodes, so that incident light enters the infrared focal plane detector through holes of the light shields. Compared with the prior art, under the condition that the basic structure of an infrared focal plane module is kept, only a layer of light shields need to be additionally arranged outside the infrared focal plane module, so that the infrared focal plane detector capable of improving the photoelectric conversion performance is simple, convenient to use, free of damage to devices and practical.
Description
Technical field
The invention belongs to Electronics Science and Technology field, especially relate to a kind of infrared focal plane detector that improves photoelectric conversion performance.
Background technology
Current, the most significant development trend of Infrared Detectors is that optical mechaical scanning imaging technique develops to gazing type imaging technique rapidly.The key of this development is that core component is focal plane device by unit component upgrading.Each developed country all develops infrared focal plane array (IRFPA) technology the huge manpower financial capacity of input.In China, not only at aspects such as resource exploration, environmental monitoring, hazard forecastings, and also especially urgent to the needs of infrared focus plane in the military and national defense field that is related to national security.
High-performance, extensive Infrared Focal plane Array Technologies have become the target of infrared acquisition field development, and the characteristic parameter of weighing infrared focal plane array seeker performance mainly comprises responsiveness, sensitivity, detectivity and signal to noise ratio etc.Wherein, responsiveness refers under certain wavelength, the ratio of the signal of telecommunication of output and the light signal of input.Because current infrared focal plane array is still adopted generally and is tied as its substantially photosensitive unit with pn, utilize the light transfer characteristic of pn knot to convert infrared signal to the signal of telecommunication, and through p electrode and n electrode, signal is exported, therefore in order to improve the responsiveness of infrared focal plane array device, people's expectation enters the incident light of infrared focal plane array and can be tied and be converted to electrical signal completely by pn.
But, for generally adopting at present the prepared n of ion implantation technology
+p planar junction device, although after heavily doped n district and Metal Contact, interface potential barrier layer becomes as thin as a wafer, charge carrier can transmit in the mode of tunnelling, thereby has formed " accurate ohmic contact "; But in order to control the tunnelling current of pn knot, p district can not be used heavily doped mode.Under the impact of the factors such as gold, half work function difference and System of Detecting Surface Defects For Material, p electrode interface place tends to form Schottky contacts.This is just equivalent to detector inside and has formed two back-to-back pn junction structures.This schottky junction has the ability that a part of infrared signal is converted to electrical signal, and the photovoltaic signal polarity that it produces is contrary with the photovoltaic signal of pn knot, thereby the signal of telecommunication of output and the ratio of the light signal of input will be reduced, thereby reduce the responsiveness of infrared focal plane array seeker.Particularly p common electrode is looped around around whole pixels, and schottky junction has sizable area, and the impact of generation will be more remarkable.The impact that reduces the opto-electronic conversion of the photosensitive unit of electrode pair becomes an effective way that improves infrared focal plane array device responsiveness.
At present, solving device electrode interface is mainly to make electrode interface form ohmic contact by designing new structure in electrode production process to the method for detector photoelectric conversion efficiency, for example, adopt multiple layer metal metallization processes, introduce and expand. loose barrier layer, form heavy doping epitaxial loayer etc. by evaporating the molten metal semiconductor interface that makes mutually.But these methods still have problems for infrared focal plane array seeker.Mainly because electrode growth is generally the later stage technique that detector is made, but infrared detecting materials particularly the character of low energy gap infrared semiconductor material is very complicated, changeable and fragile, the band structure of surface, interface is easy to be subject to the impact of above-mentioned technical process and changes, and the component failure therefore causing due to electrode fabrication will increase production cost and loss greatly.
Summary of the invention
Object of the present invention be exactly provide in order to overcome the defect that above-mentioned prior art exists one have simply, facilitate, to device not damaged, practical, suppress the impact on the photosensitive first photosignal of detector of photosignal that Interface electric field forms, improved the infrared focal plane detector of the photoelectric conversion efficiency of infrared focal plane detector.
Object of the present invention can be achieved through the following technical solutions:
An infrared focal plane detector that improves photoelectric conversion performance, comprises
Be positioned at the photosensitive unit in focal plane of chip central authorities shady face,
The N-shaped metal electrode being connected with photosensitive unit,
The public electrode forming around the p-type semi-conducting material of all photosensitive units,
Also comprise shadow shield, be positioned at the side to light of public electrode, stop that the Infrared irradiation of incident is to public electrode side to light, incident light is entered in infrared focal plane detector from the hole of shadow shield, can not change under the prerequisite of infrared focal plane array device structure like this, by public electrode shadow shield, the opto-electronic conversion of electrode interface schottky junction is effectively suppressed, improves the photoelectric conversion efficiency of infrared focal plane array device.
Described shadow shield adopts the material of transmitted infrared light not or reflects infrared light to make and obtains, and the shape of shadow shield is identical with the shape of infrared focal plane detector public electrode, offers the hole that printing opacity is used on shadow shield.
The thickness of described shadow shield is 50 μ m～1mm.
Incident illumination is mapped to the back side of public electrode, from the hole of shadow shield, impinges perpendicularly in detector, and incident light is converted to electrical signal by photosensitive unit, outputs to reading circuit through N-shaped metal electrode.
Described N-shaped metal electrode carries out heavy doping, forms ohmic contact with n+ type semi-conducting material.
Described N-shaped metal electrode and the contact-making surface of public electrode are provided with passivation layer.
Compared with prior art, the present invention has the following advantages:
(1) photovoltaic effect of based semiconductor device, because p electrode interface schottky junction and photosensitive first pn knot all will produce photovoltaic signal under the irradiation of infrared light, but the polarity of the photovoltaic that schottky junction produces is contrary with pn knot, therefore will reduce the signal of telecommunication of output and the ratio of the light signal of input, thereby reduce the responsiveness of infrared focal plane array seeker.After the shadow shield of public electrode is positioned over light entrance face, by stopping that incident illumination is mapped to the back side of public electrode, reduce by this way the generation of schottky junction photovoltaic, improved the photoelectric conversion efficiency of device.
(2) in the situation that keeping infrared focus plane module basic structure, only need to increase one deck shadow shield outward in infrared focus plane module, have simple, convenient, to device not damaged, practical feature.
Brief description of the drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is the structural representation of shadow shield;
Fig. 3 is that the photovoltaic signal of observing on oscilloscope is schemed over time.
In figure, 1 is that N-shaped metal electrode, 2 is that passivation layer, 3 is that n+ type semi-conducting material, 4 is that public electrode, 5 is that substrate, 6 is shadow shield.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Embodiment
A kind of infrared focal plane detector that improves photoelectric conversion performance, its structure as shown in Figure 1, comprise the photosensitive unit in focal plane that is positioned at chip central authorities shady face, the N-shaped metal electrode 1 being connected with photosensitive unit, the public electrode 4 forming around the p-type semi-conducting material of all photosensitive units, is arranged on the substrate 5 at the public electrode back side, and N-shaped metal electrode 1 carries out heavy doping, form ohmic contact with n+ type semi-conducting material 3, N-shaped metal electrode 1 is provided with passivation layer 2 with the contact-making surface of public electrode 4.
In addition, also include shadow shield 6, be positioned at the back side side to light of public electrode 4, stop that the Infrared irradiation of incident is to public electrode side to light, incident light is entered in infrared focal plane detector from the hole of shadow shield, can not change under the prerequisite of infrared focal plane array device structure like this, by public electrode shadow shield, the opto-electronic conversion of electrode interface schottky junction is being effectively suppressed, improve the photoelectric conversion efficiency of infrared focal plane array device.
The structure of shadow shield 4 as shown in Figure 2, can adopt the material of transmitted infrared light not or reflects infrared light to make obtains, the shape of shadow shield is identical with the shape of infrared focal plane detector public electrode, offers the hole that printing opacity is used on shadow shield, and thickness is 50 μ m～1mm.While using shadow shield 4, incident illumination is mapped to the back side of public electrode, from the hole of shadow shield 4, impinges perpendicularly in detector, and incident light is converted to electrical signal by photosensitive unit, outputs to reading circuit through N-shaped metal electrode.
Below with (T=77K) Hg under liquid nitrogen temperature
0.702cd
0.298the pn knot photovoltaic type infrared focal plane array seeker of Te material is example, and embodiments of the present invention are made to detailed description:
1) the HgCdTe film photovoltaic detector that measured infrared focal plane array seeker is molecular beam epitaxial growth.P-type Hg
0.702cd
0.298te is grown on GaAs substrate,
pthe doping content of shaped material is N
a=8 × 10
15em
-3.N-shaped doping content is N
d=1 × 10
17cm
-3, junction area is that photosensitive elemental area is 50 μ m × 50 μ m.In the middle of p public electrode enters to be looped around by all photosensitive units.Penetrating light incides taking substrate as side to light in pn knot.Photovoltaic signal is through p electrode and the output of n electrode of detector.Test component is placed on and in Dewar container for liquefied nitrogen, carries out coolingly, makes its working temperature approach 77K.
2) adopt the ultrafast pulse laser of tunable wave length to irradiate infrared focal plane array seeker as light source, incident wavelength is adjusted to the response wave band of detector, for the Hg this example Suo Shu
0.
702cd
0.
298its response wave length peak value of Te material is 5um.The repetition rate of pulse laser is 10 hertz, and pulse duration is 30 psecs.Adjusting light path makes pulse laser vertical incidence enter detector.Using the n electrode of the photosensitive unit of detector and p public electrode as signal output part, photovoltaic signal inputs to the photovoltaic response of digital storage oscilloscope observation detector by BNC holding wire.
3), in the time not adopting p public electrode shadow shield, the photovoltaic signal that the photosensitive unit of pulsed laser irradiation excites then presents photovoltaic peak again for first there is a photovoltaic paddy, as shown in Figure 3.Photovoltaic paddy is produced by the Schottky barrier of p public electrode interface, and photovoltaic peak is produced by photosensitive first pn knot.Due to the existence of schottky junction photovoltaic, the photovoltaic peak value of pn knot is dragged down, and causes its photoelectric conversion efficiency to reduce.
4) pressing close to the p public electrode shadow shield of meeting light entrance face place and put into metal material of focal plane array device, adjusting shadow shield position and make its shading light part can cover public electrode part completely.Still adopt identical pulse laser irradiation device, the photovoltaic signal of observing on oscilloscope presents the feature at photovoltaic peak substantially, as shown in Figure 3.Compared with not adding the photovoltaic signal of public electrode shadow shield, the amplitude of photovoltaic paddy is suppressed, and photovoltaic peak value has obtained enhancing.Therefore under identical incident optical signal, public electrode shadow shield has played the photoelectric conversion efficiency and the responsiveness that improve infrared focal plane array device.
Claims (6)
1. an infrared focal plane detector that improves photoelectric conversion performance, comprises
Be positioned at the photosensitive unit in focal plane of chip central authorities shady face,
The N-shaped metal electrode being connected with photosensitive unit,
The public electrode forming around the P type semiconductor material of all photosensitive units,
It is characterized in that, also comprise shadow shield, be positioned at the side to light of public electrode, stop that the Infrared irradiation of incident, to public electrode side to light, enters in infrared focal plane detector incident light from the hole of shadow shield.
2. a kind of infrared focal plane detector that improves photoelectric conversion performance according to claim 1, it is characterized in that, described shadow shield adopts the material of transmitted infrared light not or reflects infrared light to make and obtains, the shape of shadow shield is identical with the shape of infrared focal plane detector public electrode, offers the hole that printing opacity is used on shadow shield.
3. a kind of infrared focal plane detector that improves photoelectric conversion performance according to claim 1, is characterized in that, the thickness of described shadow shield is 50 μ m～1mm.
4. a kind of infrared focal plane detector that improves photoelectric conversion performance according to claim 1, it is characterized in that, incident illumination is mapped to the back side of public electrode, from the hole of shadow shield, impinge perpendicularly in detector, incident light is converted to electrical signal by photosensitive unit, outputs to reading circuit through N-shaped metal electrode.
5. a kind of infrared focal plane detector that improves photoelectric conversion performance according to claim 1, is characterized in that, described N-shaped metal electrode carries out heavy doping, forms ohmic contact with n+ type semi-conducting material.
6. a kind of infrared focal plane detector that improves photoelectric conversion performance according to claim 1, is characterized in that, described N-shaped metal electrode and the contact-making surface of public electrode are provided with passivation layer.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105914252A (en) * | 2016-06-12 | 2016-08-31 | 中国科学院上海技术物理研究所 | Ultraviolet and infrared double color focal plane detector array, performance design and manufacturing method thereof |
| CN108963028A (en) * | 2018-07-14 | 2018-12-07 | 刘翡琼 | A kind of optothermal detector and preparation method thereof improving detection accuracy |
| CN109659379A (en) * | 2018-12-25 | 2019-04-19 | 深圳市芯思杰智慧传感技术有限公司 | Normal incidence multiple-unit photoelectric chip and preparation method thereof |
| CN111128992A (en) * | 2019-12-13 | 2020-05-08 | 中国电子科技集团公司第四十四研究所 | Anti-irradiation near-infrared focal plane detector and manufacturing method thereof |
| CN113690262A (en) * | 2021-10-25 | 2021-11-23 | 武汉高芯科技有限公司 | Infrared focal plane chip, preparation method thereof and infrared focal plane detector |
| CN114530468A (en) * | 2021-11-19 | 2022-05-24 | 中芯热成科技(北京)有限责任公司 | Infrared focal plane detector and preparation method thereof |
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| US6437415B1 (en) * | 1998-06-22 | 2002-08-20 | Sumitomo Electric Industries, Ltd. | Photodiode and photodiode module |
| CN101300685A (en) * | 2005-09-12 | 2008-11-05 | 索尼株式会社 | Semiconductor device and fabrication method thereof |
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2014
- 2014-04-08 CN CN201410137123.XA patent/CN103915525A/en active Pending
Patent Citations (3)
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| JPH09223816A (en) * | 1996-02-16 | 1997-08-26 | Hamamatsu Photonics Kk | Semiconductor photo detector |
| US6437415B1 (en) * | 1998-06-22 | 2002-08-20 | Sumitomo Electric Industries, Ltd. | Photodiode and photodiode module |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105914252A (en) * | 2016-06-12 | 2016-08-31 | 中国科学院上海技术物理研究所 | Ultraviolet and infrared double color focal plane detector array, performance design and manufacturing method thereof |
| CN108963028A (en) * | 2018-07-14 | 2018-12-07 | 刘翡琼 | A kind of optothermal detector and preparation method thereof improving detection accuracy |
| CN108963028B (en) * | 2018-07-14 | 2020-09-25 | 新昌县雷涛机械有限公司 | Photo-thermal detector for improving detection precision and preparation method thereof |
| CN109659379A (en) * | 2018-12-25 | 2019-04-19 | 深圳市芯思杰智慧传感技术有限公司 | Normal incidence multiple-unit photoelectric chip and preparation method thereof |
| CN109659379B (en) * | 2018-12-25 | 2024-05-24 | 芯思杰技术(深圳)股份有限公司 | Normal incidence type multi-unit photoelectric chip and preparation method thereof |
| CN111128992A (en) * | 2019-12-13 | 2020-05-08 | 中国电子科技集团公司第四十四研究所 | Anti-irradiation near-infrared focal plane detector and manufacturing method thereof |
| CN111128992B (en) * | 2019-12-13 | 2021-08-10 | 中国电子科技集团公司第四十四研究所 | Anti-irradiation near-infrared focal plane detector and manufacturing method thereof |
| CN113690262A (en) * | 2021-10-25 | 2021-11-23 | 武汉高芯科技有限公司 | Infrared focal plane chip, preparation method thereof and infrared focal plane detector |
| CN113690262B (en) * | 2021-10-25 | 2022-03-22 | 武汉高芯科技有限公司 | Infrared focal plane chip, preparation method thereof and infrared focal plane detector |
| CN114530468A (en) * | 2021-11-19 | 2022-05-24 | 中芯热成科技(北京)有限责任公司 | Infrared focal plane detector and preparation method thereof |
| CN114530468B (en) * | 2021-11-19 | 2023-11-14 | 中芯热成科技(北京)有限责任公司 | Infrared focal plane detector and preparation method thereof |
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Application publication date: 20140709 |