CN105914252A - Ultraviolet and infrared double color focal plane detector array, performance design and manufacturing method thereof - Google Patents
Ultraviolet and infrared double color focal plane detector array, performance design and manufacturing method thereof Download PDFInfo
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- 238000013461 design Methods 0.000 title claims abstract description 17
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- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims description 22
- 238000005516 engineering process Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 238000004088 simulation Methods 0.000 claims description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 230000004044 response Effects 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 230000003595 spectral effect Effects 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229960002415 trichloroethylene Drugs 0.000 claims description 6
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 230000006798 recombination Effects 0.000 claims description 4
- 238000005215 recombination Methods 0.000 claims description 4
- 238000004458 analytical method Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 230000002262 irrigation Effects 0.000 claims description 3
- 238000003973 irrigation Methods 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 3
- 238000004659 sterilization and disinfection Methods 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 238000000825 ultraviolet detection Methods 0.000 claims description 3
- 230000005672 electromagnetic field Effects 0.000 claims description 2
- 230000008676 import Effects 0.000 claims description 2
- 238000009738 saturating Methods 0.000 claims description 2
- 230000035699 permeability Effects 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 10
- 230000005855 radiation Effects 0.000 abstract description 10
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010606 normalization Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
The invention discloses an ultraviolet and infrared double color focal plane detector array, a performance design and a manufacturing method thereof. A structural single sheet integrates a Pt/CdS ultraviolet focal plane and an InSb infrared focal plane. The Pt/CdS ultraviolet focal plane receives positive incidence. Because infrared radiation can penetrate CdS and arrive at an InSb absorption layer so that simultaneous detection of ultraviolet radiation and infrared radiation can be realized. Working wavelength ranges of a Pt/CdS ultraviolet and InSb infrared double color focal plane array are 300 to 550nm and 2.9-5.7mum. The array, the design and the method have advantages that a distance between the ultraviolet focal plane and the infrared focal plane in a Pt/CdS ultraviolet and InSb infrared double color focal plane array structure is close so that confocal performance is achieved; and ultraviolet and infrared photosensitive components are aligned vertically, which is good for an optical system design. The array, the design and the method of the invention have a significant meaning for an optimal design and manufacturing of an actual double color device.
Description
Technical field
The present invention relates to Pt/CdS Schottky joint ultraviolet detector device and InSb photovoltaic type infrared detector
The design and performance of part is measured, and specifically refers to enter based on Pt/CdS ultraviolet focal-plane and InSb infrared focus plane
The dual-color detection method of row ultraviolet band and infrared band.
Background technology
The ability of multi-color detection has critically important status in advanced seeker system, by obtaining different-waveband
Signal can accurately distinguish temperature and the feature of object in search coverage.Compared to monochromatic probe, polychrome is visited
Survey provide various dimensions contrast and can be with basis signal Processing Algorithm to improve device sensitivity.Such as, double
Color focus planardetector array can process the radiation signal of two wave bands and remove background clutter and sunlight etc.
Interference information and leave behind target object.Double color focus plane array is owing to effective signal-to-noise ratio is higher than monochromatic focal plane
Detector array and be widely used in earth planetary remote sensing, the field such as astronomical and military.
Ultraviolet radiation wave band is 0.01 μm～0.4 μm, and the sun is then the strongest UV source.For difference
The ultraviolet of wavelength absorbance in an atmosphere is the most different, and the wavelength ultraviolet less than 280nm radiates the most all
Absorbed by air, and the ultraviolet of this wave band radiation also referred to as non-solar-blind band.300nm～400nm ripple
The ultraviolet of section can arrive ground through air, is referred to as ultraviolet window.Military field ultraviolet detection technology master
Will be based on the detection of ultraviolet window near the ground.
For aerial object (being in uniform Lyα Forest), block by the ultraviolet of atmospheric scattering
Radiate and self send infra-red radiation, then ultraviolet/infrared double color focus plane array is by simultaneously to ultraviolet spoke
Penetrate signal and infrared radiation signal is processed to detection or follows the tracks of this object, thus discrimination is substantially improved.
The service band of CdS is 300nm～500nm, including ultraviolet window and a part of visible light wave range, simultaneously
Owing to infra-red radiation has good transmittance in CdS material, so this material is in the application of double-color detector
Middle tool has great advantage.Choose bigger Pt Yu CdS of work function simultaneously and form Schottky joint, and as purple
The core of external detector.Owing to InSb material has high-quantum efficiency, high sensitivity in middle-infrared band
Advantage and large scale array InSb focal plane arrays (FPA) processing technology ripe, so infrared detection members then makes
Use InSb infrared focal plane array.
The present invention is by design Pt/CdS ultraviolet and InSb infrared double color focus plane array, and passes through
The spectral response of ISE-TCAD software this device of numerical computations and cross-talk, thus verify ultraviolet and infrared double color
The feasibility of detection method.
Summary of the invention
The invention discloses a kind of ultraviolet and infrared double color focus plane detector and performance design thereof and preparation side
Method.Pt/CdS ultraviolet and the structure of InSb infrared double color focus plane array and this knot is obtained by numerical Design
Spectral response corresponding to structure and service band, demonstrate the feasibility of this device dual-color detection.
A kind of ultraviolet infrared double color focus plane detector array, including n-type substrate InSb absorbed layer 4, SiO2
Barrier layer 3, N-shaped CdS absorbed layer 2, p-type InSb absorbed layer 5, described ultraviolet infrared double color Jiao puts down
The structure of surface detector array is: be followed successively by SiO on n-type substrate InSb absorbed layer 42Barrier layer 3,
N-shaped CdS absorbed layer 2 and Pt thin film 1,6, electrode corresponding to ultraviolet focal-plane each detector pixel
On Pt thin film 1, the public electrode 7 of ultraviolet focal-plane is positioned on N-shaped CdS absorbed layer 2；At N-shaped
Substrate InSb absorbed layer 4 back side is p-type InSb absorbed layer 5, and infrared focal plane detector pixel is corresponding
Electrode 8 is positioned on p-type InSb absorbed layer 5, and the public electrode 9 of infrared focus plane is positioned at n-type substrate InSb
On absorbed layer 4；
Described n-type substrate InSb absorbed layer 4 thickness is dn, arsenic doping concn be Nn；
Described p-substrate InSb absorbed layer 5 thickness is dp, boron doping concentration be Np；
Described CdS absorbed layer 2 thickness is dcds, arsenic doping concn be Ncds；
Described Pt thin film 1 thickness is dpt。
Performance design and the preparation method of double-color detector are as follows:
1) .n type substrate InSb absorbed layer 4 is SiO above2Barrier layer 3, and 2 absorb for N-shaped CdS
Layer, the electrode 6 on Pt thin film 1 surface electrode corresponding to ultraviolet focal-plane each detector pixel, 7 are
The public electrode of ultraviolet focal-plane, the electrode on p-type InSb absorbed layer 5 surface, 8 detect for infrared focus plane
The electrode that device pixel is corresponding, 9 is the public electrode of infrared focus plane.
2). described n-type substrate InSb absorbed layer 4 thickness is dn, arsenic doping concn be Nn, described p-type
Substrate InSb absorber thickness is dp, boron doping concentration be Np, p district and n district are respectively mounted electrode simultaneously
6 and 7 to measure output current signal；
3). described Pt thin film 1 thickness is dpt, described CdS absorbed layer 2 thickness is dcds, arsenic doping dense
Degree is Ncds, it is respectively mounted electrode 8,9 to measure output electric current letter at Pt thin film and CdS absorbed layer simultaneously
Number.
4). build physical model.Use finite time-domain calculus of finite differences (FDTD) and FInite Element (FEM)
Combined simulation carries out two-dimensional numerical analysis to device.During FDTD method analog electromagnetic field, first
Set up the data base of various material parameter, electrical conductivity, relative dielectric constant and relative magnetic as corresponding in each frequency
Conductances etc., then the device architecture to design carries out stress and strain model, bond material parameter and dispersive model use
FDTD method calculates the magnetic distribution in target area and is converted into photoproduction carrier concentration distribution.?
During FEM method analog device electrology characteristic, in conjunction with photoproduction carrier concentration distribution results, import
The parameters such as the mobility of material, band gap, absorptance, dielectric constant, and the classical drift domination of foundation,
The electric current that SRH is compound and the basic physical model calculating device zero such as auger recombination is on the lower side.
5). arranging ambient temperature is T, and the incident light wave of the ultraviolet detection pixel that centre is incided in front is a length of
λ, luminous power perseverance is P, and the incident illumination of ultraviolet band can be absorbed by CdS absorbed layer, and infrared light then can be saturating
Cross CdS absorbed layer to be absorbed by InSb absorbed layer, in the case of being irradiated by numerical simulation different wave length incident illumination
Photoresponse rate can obtain spectral response and cross-talk.
6). first prepare corresponding according to the scale of Pt/CdS ultraviolet and InSb infrared double color focus plane array
Lithography mask version, then uses plasma enhanced chemical vapor deposition method with N-shaped InSb material for substrate
(PECVD) growth thickness is the SiO about 1 μm2, and then use physical vapor transport (PVT)
At SiO2Superficial growth thickness is the N-shaped CdS monocrystalline about 5 μm.
7). clean CdS surface by acetone and methanol and use hydrochloric acid solution to remove the oxide layer on surface,
Then use ultraviolet photolithographic technology and etching technics to make CdS mesa structure and Schottky joint window, then make
With the Pt membrane electrode of radiofrequency magnetron sputtering technology growth high transmission rate to form Schottky contacts, and warp
Cross stripping technology and obtain ultraviolet focal-plane array.
8). device is placed on clean glass plate (InSb substrate is upward), places in device surrounding suitable
The wax of amount also heats, and after wax to be melted enters bottom device, rinses unnecessary wax with trichloro ethylene, and
And use ether propanol irrigation and disinfection.N-shaped InSb substrate is polished thinning, and carries out ion note
Enter to form p+District, then make InSb platform by photoetching process, etching technics, thermal evaporation method and stripping technology
Face structure and electrode.Finally heated glass plate and use trichloro ethylene to rinse out the wax of adhesion to obtain
Pt/CdS ultraviolet and InSb infrared double color focus plane array device.
The invention have the advantage that Pt/CdS ultraviolet is burnt with InSb infrared double color focus plane array structure medium ultraviolet
Plane and infrared focus plane are apart from close thus confocal, and ultraviolet infrared photosensitive unit consistency from top to bottom is conducive to light
The design of system.Double color focus plane array medium ultraviolet focal plane is in infrared focus plane upper strata, and CdS
Absorbed layer is almost transparent for the incident illumination of infrared band.The design of mesa structure reduces photosensitive region
Area thus effectively reduce dark current and cross-talk.Pt/CdS is purple by the result verification of numerical simulation
Outer and the feasibility of InSb infrared double color focus plane array dual-color detection, for preparation and the optimization of practical devices
Theoretical direction is provided.
Accompanying drawing explanation
Fig. 1 is the schematic cross-section of Pt/CdS ultraviolet and InSb infrared double color focus plane array.Wherein 1 is
Pt thin film, 2 is N-shaped CdS absorbed layer, and 3 is SiO2Barrier layer, 4 is N-shaped InSb absorbed layer, and 5 are
P-type InSb collecting layer, 6 electrodes corresponding to ultraviolet focal-plane each detector pixel, 7 is that ultraviolet is burnt
The public electrode of plane, 8 is the electrode that infrared focal plane detector pixel is corresponding, and 9 is infrared focus plane
Public electrode.
Fig. 2 is Pt/CdS ultraviolet and InSb infrared double color focus plane array normalization spectral response.
Fig. 3 is the cross-talk of Pt/CdS ultraviolet and InSb infrared double color focus plane array.
Detailed description of the invention
Below in conjunction with the accompanying drawings the detailed description of the invention of the present invention is elaborated:
1. building Pt/CdS ultraviolet and InSb infrared double color focus plane array two dimensional model, CdS absorbs thickness
Degree dcdsIt is set to 4.5 μm, doping content NcdsIt is 1.6 × 10cm-3, Pt film thickness dptFor 8nm,
Ultraviolet photosensitive face length degree LUVIt is 25 μm.InSb N-shaped absorber thickness dnIt is 9.2 μm, N-shaped doping content
NnIt is 1015cm-3, p-type doping content NpIt is 1017cm-3.Infrared acquisition pixel photosurface length LIRFor
15 μm, and the focal plane arrays (FPA) cycle is 50 μm, sees Fig. 1.
2. build physical model.Use FDTD method calculate photoproduction carrier concentration simulated domain point
Cloth, is coupled to this result in the simulation of electricity part then, the electrical properties simulation process foundation of device
The bases such as drift domination, SRH composite model, auger recombination model, radiation recombination model and dispersive model
This physical mechanism carries out numerical computations, and the final macroscopic physical quantity such as electric current and voltage that obtains researchs and analyses device
Performance and further optimum structural parameter.
3. arranging ambient temperature is T=77K, incident optical power P=0.0001W/cm-2, lambda1-wavelength from
300nm changes to 5.9 μm, obtains Pt/CdS ultraviolet and InSb infrared double color focus plane by numerical simulation
The normalization spectral response (Fig. 2) of array and cross-talk (Fig. 3).
4. result of study display Pt/CdS ultraviolet with the service band of InSb infrared double color focus plane array is
300～550nm (ultraviolets) and 2.9～5.7 μm (infrared).At ultraviolet band, device is a length of at incident light wave
Having peak response rate during 500nm is 0.0403A/W, and at infrared band, during a length of 5.1 μm of incident light wave
There is peak response rate 1.07A/W.By Simulation, Pt/CdS ultraviolet is burnt with InSb infrared double color
Planar array can carry out the dual-color detection of ultraviolet band and infrared band.
5. determine Pt/CdS ultraviolet and the geometry of InSb infrared double color focus plane array according to numerical simulation result
Structure, first prepares corresponding lithography mask version according to the scale of this double color focus plane array, then with N-shaped
InSb material is that substrate uses plasma enhanced chemical vapor deposition method (PECVD) growth thickness to be 1 μm
The SiO of left and right2, and then use physical vapor transport (PVT) at SiO2Superficial growth thickness is 5 μm
The N-shaped CdS monocrystalline of left and right.
6. clean CdS surface by acetone and methanol and use hydrochloric acid solution to remove the oxide layer on surface,
Then use ultraviolet photolithographic technology and etching technics to make CdS mesa structure and Schottky joint window, then make
With the Pt membrane electrode of radiofrequency magnetron sputtering technology growth high transmission rate to form Schottky contacts, and warp
Cross stripping technology and obtain ultraviolet focal-plane array.
7. device is placed on (InSb substrate is upward) on clean glass plate, places in device surrounding appropriate
Wax and heat, after wax to be melted enters bottom device, rinse unnecessary wax with trichloro ethylene, and
Use ether propanol irrigation and disinfection.N-shaped InSb substrate is polished thinning, and carries out ion implanting
Form p+District, then make InSb table top by photoetching process, etching technics, thermal evaporation method and stripping technology
Structure and electrode.Finally heated glass plate and use trichloro ethylene to rinse out the wax of adhesion to obtain Pt/CdS
Ultraviolet and InSb infrared double color focus plane array device.
Claims (3)
1. a ultraviolet infrared double color focus plane detector array, including n-type substrate InSb absorbed layer (4)
SiO2Barrier layer (3), N-shaped CdS absorbed layer (2), p-type InSb absorbed layer (5), it is characterised in that:
The structure of described ultraviolet infrared double color focus plane detector array is: absorb in n-type substrate InSb
It is followed successively by SiO above layer (4)2Barrier layer (3), N-shaped CdS absorbed layer (2) and Pt thin film (1),
Electrode (6) corresponding to ultraviolet focal-plane each detector pixel is positioned on Pt thin film (1), and ultraviolet is burnt
The public electrode (7) of plane is positioned on N-shaped CdS absorbed layer (2)；At n-type substrate InSb absorbed layer
(4) back side is p-type InSb absorbed layer (5), the electrode (8) that infrared focal plane detector pixel is corresponding
Being positioned on p-type InSb absorbed layer (5), the public electrode (9) of infrared focus plane is positioned at n-type substrate InSb
On absorbed layer (4).
2. one kind based on a kind of ultraviolet described in claim 1 and infrared double color focus plane detector array
Performance based design, it is characterised in that method step is as follows:
1). build physical model, use finite time-domain calculus of finite differences and FInite Element combined simulation that device is entered
Row two-dimensional numerical analysis, during FDTD method analog electromagnetic field, first sets up various material parameter
Data base, electrical conductivity, relative dielectric constant and relative permeability etc. as corresponding in each frequency, then to design
Device architecture carry out stress and strain model, bond material parameter and dispersive model use FDTD method to calculate target
Magnetic distribution in region is also converted into photoproduction carrier concentration distribution；At FEM method analog device electricity
Learn during characteristic, in conjunction with photoproduction carrier concentration distribution results, import the mobility of material, band gap,
The parameter such as absorptance, dielectric constant, and be combined and auger recombination according to classical drift domination, SRH
The electricity on the lower side etc. basic physical model calculating device zero；
2). arranging ambient temperature is T, and the incident light wave of the ultraviolet detection pixel that centre is incided in front is a length of
λ, luminous power perseverance is P, and the incident illumination of ultraviolet band can be absorbed by CdS absorbed layer, and infrared light then can be saturating
Cross CdS absorbed layer to be absorbed by InSb absorbed layer, in the case of being irradiated by numerical simulation different wave length incident illumination
Photoresponse rate can obtain spectral response and cross-talk.
3. prepare a kind of ultraviolet as claimed in claim 1 and infrared double color focus plane detector array for one kind
Method, it is characterised in that method step is as follows:
1). first prepare corresponding according to the scale of Pt/CdS ultraviolet and InSb infrared double color focus plane array
Lithography mask version, then uses plasma enhanced chemical vapor deposition method with N-shaped InSb material for substrate
Growth thickness is the SiO about 1 μm2, and then use physical vapor transport at SiO2Superficial growth thickness
It it is the N-shaped CdS monocrystalline about 5 μm；
2). clean CdS surface by acetone and methanol and use hydrochloric acid solution to remove the oxide layer on surface,
Then use ultraviolet photolithographic technology and etching technics to make CdS mesa structure and Schottky joint window, then make
With the Pt membrane electrode of radiofrequency magnetron sputtering technology growth high transmission rate to form Schottky contacts, and warp
Cross stripping technology and obtain ultraviolet focal-plane array；
3). being placed on by device on clean glass plate, InSb substrate upward, is placed suitable in device surrounding
The wax of amount also heats, and after wax to be melted enters bottom device, rinses unnecessary wax with trichloro ethylene, and
And use ether propanol irrigation and disinfection；N-shaped InSb substrate is polished thinning, and carries out ion note
Enter to form p+District, then make InSb platform by photoetching process, etching technics, thermal evaporation method and stripping technology
Face structure and electrode；Finally heated glass plate and use trichloro ethylene to rinse out the wax of adhesion to obtain
Pt/CdS ultraviolet and InSb infrared double color focus plane array device.
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| CN108321244A (en) * | 2018-03-26 | 2018-07-24 | 厦门芯荣光电科技有限公司 | UV photodetector and preparation method thereof for ultraviolet IR dual spectral detection |
| CN108489923A (en) * | 2018-01-30 | 2018-09-04 | 中国科学院上海技术物理研究所 | Infrared-gas imaging focal plane based on sensitive member differential signal and imaging method |
| CN109216485A (en) * | 2017-06-29 | 2019-01-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | infrared detector and preparation method thereof |
| CN110836861A (en) * | 2019-10-28 | 2020-02-25 | 西北工业大学 | Long-wave infrared bicolor imaging monitoring system for SF6 gas leakage |
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